JPH0738325A - Wide band dipole antenna - Google Patents
Wide band dipole antennaInfo
- Publication number
- JPH0738325A JPH0738325A JP17780893A JP17780893A JPH0738325A JP H0738325 A JPH0738325 A JP H0738325A JP 17780893 A JP17780893 A JP 17780893A JP 17780893 A JP17780893 A JP 17780893A JP H0738325 A JPH0738325 A JP H0738325A
- Authority
- JP
- Japan
- Prior art keywords
- dipole
- parasitic element
- electric field
- wavelength
- dipole antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、例えば移動通信におけ
る基地局用のダイポールアンテナに関し、特に広帯域ダ
イポールアンテナに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dipole antenna for a base station in mobile communication, and more particularly to a wide band dipole antenna.
【0002】[0002]
【従来の技術】図9は従来のダイポールアンテナの一例
の要部を示す正面図、図10は図9の側面図である。2. Description of the Related Art FIG. 9 is a front view showing an essential part of an example of a conventional dipole antenna, and FIG. 10 is a side view of FIG.
【0003】図中の1a,1bはダイポール素子、2は
平行線路よりなる給電回路である。このダイポールアン
テナの等価回路を図11に示す。図中のT、T′は高周
波電源接続端子である。L、C及びRは前記ダイポール
素子1a,1bの等価定数を形成する実効インダクタン
ス、実効静電容量及び実効抵抗で、これらによって直列
共振回路が形成される。In the figure, 1a and 1b are dipole elements, and 2 is a feeding circuit composed of parallel lines. An equivalent circuit of this dipole antenna is shown in FIG. T and T'in the figure are high frequency power supply connection terminals. L, C, and R are an effective inductance, an effective capacitance, and an effective resistance that form an equivalent constant of the dipole elements 1a and 1b, and these form a series resonance circuit.
【0004】図12は以上の構成のダイポールアンテナ
の電圧定在波比(以下「VSWR」という)の一例を示
すグラフで、横軸には周波数、縦軸にはVSWRを示
す。このグラフから分かるように、VSWRが 1.5以下
となる比帯域幅は約8%と、狭くなっている。FIG. 12 is a graph showing an example of the voltage standing wave ratio (hereinafter referred to as "VSWR") of the dipole antenna having the above-mentioned configuration. The horizontal axis shows frequency and the vertical axis shows VSWR. As can be seen from this graph, the relative bandwidth at which VSWR is 1.5 or less is narrow, about 8%.
【0005】[0005]
【発明が解決しようとする課題】ところで、従来のダイ
ポールアンテナを広帯域化する手法としては次のような
ものが一般に知られている。ダイポール素子が筒状また
は棒状の導体よりなる場合にはその直径を大きくし、ま
たダイポール素子が細長い板状の導体よりなる場合には
その幅を広くして、使用周波数の変化に対するリアクタ
ンスの変化を小さくすることによって広帯域化する。By the way, the following methods are generally known as methods for widening the band of the conventional dipole antenna. If the dipole element is made of a cylindrical or rod-shaped conductor, increase its diameter, and if the dipole element is made of a slender plate-shaped conductor, widen it to reduce the change in reactance with changes in the operating frequency. Widening the band by making it smaller.
【0006】しかし、このような手法によるときは、交
差偏波成分を生じる恐れがあるため、ある程度以上にダ
イポール素子の直径を大きくし、または幅を広くするこ
とができず、広帯域化には限度があった。However, in the case of such a method, there is a possibility that cross-polarized components may be generated, so that the diameter or width of the dipole element cannot be increased to a certain extent or more, and the wide band is limited. was there.
【0007】本発明は前記問題点に鑑みてなされたもの
で、広帯域特性の良好な広帯域ダイポールアンテナを提
供することを目的とする。The present invention has been made in view of the above problems, and an object of the present invention is to provide a wideband dipole antenna having good wideband characteristics.
【0008】[0008]
【課題を解決するための手段】上記課題を解決するため
に第1の発明は、ダイポール素子と、当該ダイポール素
子の電界軸に平行な面内で前記ダイポール素子の周囲を
囲い込むように、放射波長の1/2波長以上の長さを有
する長尺の導体を矩形状に折り曲げて形成すると共に、
その1つの前記電界軸方向の辺の中央部に切れ込みを有
する無給電素子とを備えたことを特徴とする。In order to solve the above-mentioned problems, a first invention is to radiate a dipole element and to surround the dipole element in a plane parallel to the electric field axis of the dipole element. A long conductor having a length of ½ wavelength or more is formed by bending it into a rectangular shape,
A parasitic element having a notch at the center of one of the sides in the electric field axis direction is provided.
【0009】第2の発明は、誘電体基板の表面に金属薄
層よりなるダイポール素子が貼付られ、前記誘電体基板
の表面に、前記ダイポール素子の電界軸に平行な面内で
前記ダイポール素子の周囲を囲い込むように、放射波長
の1/2波長以上の長さを有する金属薄膜を矩形状に形
成すると共に、その1つの前記電界軸方向の辺の中央部
に切れ込みを形成した無給電素子が貼付られていること
を特徴とする。According to a second aspect of the present invention, a dipole element made of a thin metal layer is attached to the surface of a dielectric substrate, and the dipole element is formed on the surface of the dielectric substrate in a plane parallel to the electric field axis of the dipole element. A parasitic element in which a metal thin film having a length equal to or more than 1/2 wavelength of a radiation wavelength is formed in a rectangular shape so as to surround the periphery, and a slit is formed in a central portion of one side of the electric field axis direction. Is affixed.
【0010】第3の発明は、放射波長に比べて十分薄い
誘電体基板の表面に金属薄層よりなるダイポール素子が
貼付られ、前記誘電体基板の裏面に、前記ダイポール素
子の電界軸に平行な面内で前記ダイポール素子の周囲を
囲い込むように、放射波長の1/2波長以上の長さを有
する金属膜層を矩形状に形成すると共に、その1つの前
記電界軸方向の辺の中央部に切れ込みを形成した無給電
素子が貼付られていることを特徴とする。According to a third aspect of the present invention, a dipole element made of a thin metal layer is attached to the front surface of a dielectric substrate that is sufficiently thin as compared with the radiation wavelength, and the back surface of the dielectric substrate is parallel to the electric field axis of the dipole element. A metal film layer having a length of ½ wavelength or more of the emission wavelength is formed in a rectangular shape so as to surround the periphery of the dipole element in a plane, and one of the central portions of the side in the electric field axis direction is formed. It is characterized in that a parasitic element having a notch formed therein is attached.
【0011】[0011]
【作用】ダイポール素子の周囲を囲い込むように無給電
素子を配設したので、良好な広帯域特性を実現できる。Since the parasitic element is arranged so as to surround the dipole element, good broadband characteristics can be realized.
【0012】また、ダイポール素子及び無給電素子を、
誘電体基板の表裏面に貼付した金属薄層により構成する
ことで、生産性が向上し、量産することが容易になる。The dipole element and the parasitic element are
The use of thin metal layers attached to the front and back surfaces of the dielectric substrate improves productivity and facilitates mass production.
【0013】[0013]
【実施例】以下、本発明の実施例を添付図面を参照しな
がら説明する。Embodiments of the present invention will be described below with reference to the accompanying drawings.
【0014】図1は本実施例の広帯域ダイポールアンテ
ナを示す正面図、図2は図1の広帯域ダイポールアンテ
ナの平面図、図3は図1の広帯域ダイポールアンテナの
側面図である。FIG. 1 is a front view showing the wideband dipole antenna of this embodiment, FIG. 2 is a plan view of the wideband dipole antenna of FIG. 1, and FIG. 3 is a side view of the wideband dipole antenna of FIG.
【0015】図中の11a,11bはダイポール素子で
ある。このダイポール素子11a,11bは丸棒状の導
体で形成されている。ダイポール素子11a,11bの
長手方向、即ち電界軸方向の部分(以下「長辺」とい
う)の長さは、使用周波数帯の中心周波数に対する波長
の1/2またはおおむね1/2に形成する。12は平行
線路よりなる給電回路である。Reference numerals 11a and 11b in the figure denote dipole elements. The dipole elements 11a and 11b are formed of round rod-shaped conductors. The length of the dipole elements 11a and 11b in the longitudinal direction, that is, the length in the electric field axis direction (hereinafter referred to as "long side") is formed to be 1/2 or approximately 1/2 of the wavelength with respect to the center frequency of the operating frequency band. Reference numeral 12 is a feeding circuit composed of parallel lines.
【0016】13はダイポール素子11a,11bの周
囲を囲い込むように形成された無給電素子である。この
無給電素子13はダイポール素子11a,11bと同様
に丸棒状の導体で形成されている。無給電素子13は1
本の棒状導体を折り曲げて形成する。この棒状導体の両
端を一定間隔をおいて突き合せた部分である切れ込み1
3aは、長辺側のうち、ダイポール素子11a,11b
の中央部分(両素子11a,11bの突き合せ部分)に
位置して構成されている。この無給電素子13は、ダイ
ポール素子11a,11bの電界軸に平行な面内であっ
て、無給電素子13の長辺方向とダイポール素子11
a,11bの長辺方向とが平行になるように配設され
る。無給電素子13の長さは、アンテナの放射波長に対
して、その1/2波長以上で、おおむね1波長の直線状
導体を折り曲げて形成する。また、無給電素子13のう
ち、長辺方向に直交する方向、即ち電界軸と直交する部
分(以下「短辺」という)においても長辺部分と同一断
面形状の導体を用いる。Reference numeral 13 is a parasitic element formed so as to surround the dipole elements 11a and 11b. The parasitic element 13 is formed of a round bar-shaped conductor like the dipole elements 11a and 11b. Parasitic element 13 is 1
It is formed by bending a rod-shaped conductor of a book. Notch 1 which is a part where both ends of this rod-shaped conductor are butted at regular intervals
3a is a dipole element 11a, 11b on the long side.
Is located at the central portion (the abutting portion of the two elements 11a and 11b). The parasitic element 13 is in a plane parallel to the electric field axes of the dipole elements 11a and 11b, and is located in the long side direction of the parasitic element 13 and the dipole element 11b.
It is arranged so that the long side directions of a and 11b are parallel to each other. The length of the parasitic element 13 is not less than 1/2 wavelength of the radiation wavelength of the antenna, and is formed by bending a linear conductor having about 1 wavelength. In addition, in the parasitic element 13, a conductor having the same cross-sectional shape as the long side portion is used also in the direction orthogonal to the long side direction, that is, in the portion orthogonal to the electric field axis (hereinafter referred to as “short side”).
【0017】なお、ダイポール素子11a,11bは丸
棒状の導体で形成したが、断面角形の棒状導体、断面円
形または角形の管状導体、細長い板状導体または線状導
体等の他の形状の導体で形成してもよい。さらに、無給
電素子13についても同様に、各種形状の導体で形成可
能である。この場合、ダイポール素子11a,11bと
無給電素子13とをそれぞれ同一断面形状の導体で形成
したり、一方を丸棒状、他方を角棒状の導体で形成する
等のように各種断面形状の導体の中から適宜選択し組み
合わせて構成してもよい。さらに、無給電素子13にお
いて、その長辺と短辺とで同一の断面形状の導体を用い
る以外に、各種断面形状の導体から適宜選択し組み合わ
せて構成してもよい。Although the dipole elements 11a and 11b are formed of round rod-shaped conductors, they may be formed of rod-shaped conductors having a rectangular cross-section, tubular conductors having a circular or square cross-section, conductors having other shapes such as elongated plate-like conductors or linear conductors. You may form. Further, the parasitic element 13 can also be formed of conductors of various shapes in the same manner. In this case, the dipole elements 11a and 11b and the parasitic element 13 are formed of conductors having the same cross-sectional shape, or one of them is formed of a conductor having a round bar shape and the other is formed of a conductor having a square bar shape. They may be appropriately selected from the inside and combined. Further, in the parasitic element 13, other than using the conductors having the same cross-sectional shape on the long side and the short side, it may be configured by appropriately selecting and combining from conductors having various cross-sectional shapes.
【0018】また、長辺側におけるダイポール素子11
a,11bと無給電素子13との間隔や、無給電素子1
3を丸棒の導体、円形の環状導体または線状導体で形成
した場合のその外径や、無給電素子13を断面角形の棒
状導体で形成した場合のその幅や、切れ込み13aの間
隔や、無給電素子13の折り曲げる前の状態における全
長(以下「全軸長」という)等は、広帯域特性の違いに
応じて適宜選定する。この場合、無給電素子13の長辺
側の長さは、無給電素子13がダイポール素子11a,
11bを囲み込む構成上、ダイポール素子11a,11
bの長辺側の長さよりも長い範囲で適宜設定する。The dipole element 11 on the long side is also provided.
The distance between a and 11b and the parasitic element 13 and the parasitic element 1
When 3 is formed of a round bar conductor, a circular annular conductor, or a linear conductor, its outer diameter, its width when the parasitic element 13 is formed of a rod-shaped conductor having a rectangular cross section, the interval between the cuts 13a, The total length of the parasitic element 13 before being bent (hereinafter referred to as “total axial length”) and the like are appropriately selected according to the difference in wide band characteristics. In this case, the length of the parasitic element 13 on the long side is such that the parasitic element 13 has the dipole element 11a,
Because of the structure surrounding 11b, the dipole elements 11a, 11
It is appropriately set within a range longer than the length of the long side of b.
【0019】無給電素子13を所定位置に支持固定する
手段としては次のようなものがある。即ち、誘電率の低
い絶縁体で形成した細長い棒状または板状等の支持体を
用いて無給電素子13をダイポール素子11a,11b
に支持する手段や、前記絶縁体を用いたモールド法によ
りダイポール素子11a,11bと無給電素子13とを
一体的にモールドしてしまう手段等がある。The following are means for supporting and fixing the parasitic element 13 at a predetermined position. That is, the parasitic element 13 is mounted on the dipole elements 11a and 11b by using an elongated rod-shaped or plate-shaped support body formed of an insulator having a low dielectric constant.
And a means for integrally molding the dipole elements 11a and 11b and the parasitic element 13 by a molding method using the insulator.
【0020】図4は前記構成のダイポールアンテナの等
価回路を示す回路構成図である。図中のT、T′は高周
波電源接続端子である。L、C及びRは前記ダイポール
素子11a,11bの等価定数を形成する実効インダク
タンス、実効静電容量及び実効抵抗で、これらによって
直列共振回路が形成されている。さらに、L、C及びR
は無給電素子13の等価定数を形成する実効インダクタ
ンス、実効静電容量及び実効抵抗で、これらによって直
列共振回路が形成されている。なお、Cc ,Cc ′は結
合静電容量であり、ダイポール素子11a,11bの共
振回路と無給電素子13の共振回路はこの結合静電容量
によって互いに結合され、複同調回路として動作する。FIG. 4 is a circuit diagram showing an equivalent circuit of the dipole antenna having the above structure. T and T'in the figure are high frequency power supply connection terminals. L, C, and R are an effective inductance, an effective capacitance, and an effective resistance that form an equivalent constant of the dipole elements 11a and 11b, and these form a series resonance circuit. Furthermore, L, C and R
Is an effective inductance, an effective capacitance, and an effective resistance that form an equivalent constant of the parasitic element 13, and these form a series resonance circuit. Cc and Cc 'are coupling capacitances, and the resonance circuit of the dipole elements 11a and 11b and the resonance circuit of the parasitic element 13 are coupled to each other by this coupling capacitance and operate as a double tuning circuit.
【0021】この場合に、ダイポール素子11a,11
b及び無給電素子13の各共振回路間の結合度を変える
か、両共振回路のいずれか一方または両方の共振周波数
を適宜調整するか、または両共振回路間の結合度を変え
ると共に両共振回路のいずれか一方または両方の共振周
波数を調整することによって、広帯域特性を持たせるこ
とができる。In this case, the dipole elements 11a, 11
b, the degree of coupling between the resonance circuits of the parasitic element 13 is changed, the resonance frequency of one or both of the resonance circuits is appropriately adjusted, or the degree of coupling between the resonance circuits is changed and both resonance circuits are changed. By adjusting the resonance frequency of either or both of them, a wide band characteristic can be provided.
【0022】両共振回路間の結合度を調整するには、長
辺側におけるダイポール素子11a,11bと無給電素
子13との間隔を変えるか、各素子11a,11b,1
3を形成する導体のいずれか一方または両方の太さを変
えるか、または長辺側におけるダイポール素子11a,
11bと無給電素子13との間隔を変えると共に各素子
11a,11b,13を形成する導体の一方または両方
の太さを変えることによって行なう。In order to adjust the degree of coupling between the two resonance circuits, the distance between the dipole elements 11a, 11b and the parasitic element 13 on the long side is changed or each element 11a, 11b, 1 is changed.
The thickness of one or both of the conductors forming 3 is changed, or the dipole element 11a on the long side is
This is performed by changing the distance between 11b and the parasitic element 13 and changing the thickness of one or both of the conductors forming each element 11a, 11b, 13.
【0023】各共振回路の共振周波数を調整する場合は
次のいずれかの手段で行なう。The resonance frequency of each resonance circuit is adjusted by any of the following means.
【0024】(1) ダイポール素子11a,11bの長
辺方向の長さを変える。(1) The lengths of the dipole elements 11a and 11b in the long side direction are changed.
【0025】(2) 無給電素子13の切れ込み13aの
間隔及び無給電素子13の全軸長の何れか一方または両
方を変える。(2) Either or both of the interval between the cuts 13a of the parasitic element 13 and the total axial length of the parasitic element 13 are changed.
【0026】(3) ダイポール素子11a,11b及び
無給電素子13を形成する導体のいずれか一方または両
方の太さを変える。(3) The thickness of one or both of the conductors forming the dipole elements 11a and 11b and the parasitic element 13 is changed.
【0027】(4) 前記3つの場合を適宜組み合わせて
調整する。(4) The above three cases are appropriately combined and adjusted.
【0028】図5は以上の調整によって広帯域特性を持
たせた広帯域ダイポールアンテナのVSWRの一例を示
すグラフである。前述した図12のグラフと同様に、横
軸には周波数、縦軸にはVSWRを示す。このグラフか
ら分かるように、VSWRが1.5 以下となる比帯域幅は
約20%となり、従来のダイポールに比較して広帯域化さ
れている。FIG. 5 is a graph showing an example of the VSWR of the wide band dipole antenna having the wide band characteristic by the above adjustment. Similar to the graph of FIG. 12 described above, the horizontal axis represents frequency and the vertical axis represents VSWR. As can be seen from this graph, the specific bandwidth for VSWR of 1.5 or less is about 20%, which is a wider band than the conventional dipole.
【0029】(第1変形例)図6は本実施例の第1変形
例を示す正面図、図7は図6の平面図である。(First Modification) FIG. 6 is a front view showing a first modification of this embodiment, and FIG. 7 is a plan view of FIG.
【0030】図中の21a,21bはダイポール素子、
23は無給電素子である。これらは誘電体基板24の表
面に平面的に設けた金属薄層によって構成されている。
具体的には誘電体基板24の表面に、例えばフォトエッ
チング法によるプリント配線と同様の手法によって誘電
体基板24の表面に設ける。22は平行線路よりなる給
電回路である。21a and 21b in the figure are dipole elements,
Reference numeral 23 is a parasitic element. These are constituted by a thin metal layer provided on the surface of the dielectric substrate 24 in a plane.
Specifically, it is provided on the surface of the dielectric substrate 24, for example, by the same method as the printed wiring by the photoetching method. Reference numeral 22 is a feeding circuit composed of parallel lines.
【0031】また、ダイポール素子21a,21bの長
辺の長さ、長辺側におけるダイポール素子21a,21
bと無給電素子23との間隔、ダイポール素子21a,
21b及び無給電素子23の幅、切れ込み23aの間
隔、無給電素子23の全軸長等は前記実施例と同様に設
定する。The lengths of the long sides of the dipole elements 21a and 21b, and the dipole elements 21a and 21 on the long side are longer.
b between the parasitic element 23 and the dipole element 21a,
The widths of 21b and the parasitic element 23, the intervals of the notches 23a, the total axial length of the parasitic element 23, etc. are set in the same manner as in the above-described embodiment.
【0032】さらに、ダイポール素子21a,21b及
び無給電素子23は、角張った形状に形成したが、なめ
らかな湾曲形状に形成してもよいことはいうまでもな
い。また、誘電体基板24が放射波長に対して十分に薄
い場合には、ダイポール素子21a,21bを誘電体基
板24の表面に設け、無給電素子23を誘電体基板24
の裏面に設けてもよい。Further, although the dipole elements 21a and 21b and the parasitic element 23 are formed in an angular shape, it goes without saying that they may be formed in a smooth curved shape. Further, when the dielectric substrate 24 is sufficiently thin with respect to the radiation wavelength, the dipole elements 21a and 21b are provided on the surface of the dielectric substrate 24, and the parasitic element 23 is provided as the dielectric substrate 24.
It may be provided on the back surface of.
【0033】以上の構成によっても、前記実施例同様の
広帯域特性を実現できる。With the above structure, the wide band characteristic similar to that of the above embodiment can be realized.
【0034】また、プリント配線手法により生産性が向
上し、均一な特性の広帯域ダイポールアンテナを量産す
ることができる。これにより、コスト低減を図ることが
できる。Further, the productivity is improved by the printed wiring method, and a wide band dipole antenna having uniform characteristics can be mass-produced. As a result, cost reduction can be achieved.
【0035】(第2変形例)図8は本実施例の第2変形
例を示す斜視図である。(Second Modification) FIG. 8 is a perspective view showing a second modification of the present embodiment.
【0036】図中の31a,31bはダイポール素子、
32は給電回路、33は無給電素子、35は平板状反射
器を示す。In the figure, 31a and 31b are dipole elements,
Reference numeral 32 is a feeding circuit, 33 is a parasitic element, and 35 is a flat reflector.
【0037】ダイポール素子31a,31b、給電回路
32、無給電素子33は板状導体で形成されている。平
板状反射器35の中央部には挿通孔35aが設けられて
いる。2本の給電回路32はそれぞれT字型に形成さ
れ、挿通孔35aに挿通されている。ダイポール素子3
1a,31bは各給電回路32の両先端に連続的に形成
されている。無給電素子33はダイポール素子31a,
31bを囲い込むように折り曲げて配設されている。The dipole elements 31a and 31b, the feeding circuit 32, and the parasitic element 33 are formed of plate conductors. An insertion hole 35a is provided in the central portion of the flat reflector 35. Each of the two power supply circuits 32 is formed in a T shape and is inserted into the insertion hole 35a. Dipole element 3
1a and 31b are continuously formed at both ends of each feeding circuit 32. The parasitic element 33 is a dipole element 31a,
It is bent and arranged so as to surround 31b.
【0038】以上の構成によっても、前記実施例同様の
広帯域特性を実現できる。With the above structure, the wide band characteristic similar to that of the above embodiment can be realized.
【0039】なお、反射器35は平板状導体を用いた
が、他の形状、例えばコーナー型反射器等を用いてもよ
い。Although the reflector 35 is a flat conductor, other shapes such as a corner reflector may be used.
【0040】[0040]
【発明の効果】以上詳述したように本発明の広帯域ダイ
ポールアンテナによれば、ダイポール素子の周囲を囲い
込むように無給電素子を配設したので、良好な広帯域特
性を実現できる。As described above in detail, according to the wideband dipole antenna of the present invention, since the parasitic element is arranged so as to surround the dipole element, a good wideband characteristic can be realized.
【0041】また、ダイポール素子及び無給電素子を、
誘電体基板の表裏面に貼付した金属薄層により構成する
ことで、生産性が向上し、量産することが容易になる。In addition, the dipole element and the parasitic element are
The use of thin metal layers attached to the front and back surfaces of the dielectric substrate improves productivity and facilitates mass production.
【図1】本発明に係る広帯域ダイポールアンテナを示す
正面図。FIG. 1 is a front view showing a wideband dipole antenna according to the present invention.
【図2】図1の広帯域ダイポールアンテナの平面図。FIG. 2 is a plan view of the wideband dipole antenna of FIG.
【図3】図1の広帯域ダイポールアンテナの側面図。FIG. 3 is a side view of the wideband dipole antenna of FIG.
【図4】図1のダイポールアンテナの等価回路を示す回
路構成図。4 is a circuit configuration diagram showing an equivalent circuit of the dipole antenna of FIG.
【図5】図1のダイポールアンテナにおける周波数とV
SWRとの関係を示すグラフ。5 is a frequency and V in the dipole antenna of FIG.
The graph which shows the relationship with SWR.
【図6】第1変形例を示す正面図。FIG. 6 is a front view showing a first modified example.
【図7】図6の平面図。FIG. 7 is a plan view of FIG.
【図8】第2変形例を示す斜視図。FIG. 8 is a perspective view showing a second modified example.
【図9】従来のダイポールアンテナの要部を示す正面
図。FIG. 9 is a front view showing a main part of a conventional dipole antenna.
【図10】図9のダイポールアンテナの側面図。10 is a side view of the dipole antenna of FIG.
【図11】図9のダイポールアンテナの等価回路。11 is an equivalent circuit of the dipole antenna of FIG.
【図12】図9のダイポールアンテナにおける周波数と
VSWRとの関係を示すグラフ。12 is a graph showing a relationship between frequency and VSWR in the dipole antenna of FIG.
11a,11b ダイポール素子 12 給電回路 13 無給電素子 13a 切れ込み T、T´ 高周波電源接続端子 L,L 実効インダクタンス C,C 実効静電容量 R,R 実効抵抗 11a, 11b Dipole element 12 Feed circuit 13 Parasitic element 13a Cut T, T'High frequency power supply connection terminal L, L Effective inductance C, C Effective capacitance R, R Effective resistance
Claims (3)
電界軸に平行な面内で前記ダイポール素子の周囲を囲い
込むように、放射波長の1/2波長以上の長さを有する
長尺の導体を矩形状に折り曲げて形成すると共に、その
1つの前記電界軸方向の辺の中央部に切れ込みを有する
無給電素子とを備えたことを特徴とする広帯域ダイポー
ルアンテナ。1. A dipole element and a long conductor having a length of ½ wavelength or more of a radiation wavelength so as to surround the circumference of the dipole element in a plane parallel to an electric field axis of the dipole element. A wide-band dipole antenna, which is formed by bending into a rectangular shape, and is provided with a parasitic element having a notch in a central portion of one side in the electric field axis direction.
ポール素子が貼付られ、前記誘電体基板の表面に、前記
ダイポール素子の電界軸に平行な面内で前記ダイポール
素子の周囲を囲い込むように、放射波長の1/2波長以
上の長さを有する金属薄膜を矩形状に形成すると共に、
その1つの前記電界軸方向の辺の中央部に切れ込みを形
成した無給電素子が貼付られていることを特徴とする広
帯域ダイポールアンテナ。2. A dipole element made of a thin metal layer is attached to the surface of a dielectric substrate, and the surface of the dielectric substrate surrounds the periphery of the dipole element in a plane parallel to the electric field axis of the dipole element. As described above, while forming a metal thin film having a length of ½ wavelength or more of the emission wavelength into a rectangular shape,
A broadband dipole antenna, wherein a parasitic element having a cut is attached to the center of one of the sides in the electric field axis direction.
面に金属薄層よりなるダイポール素子が貼付られ、前記
誘電体基板の裏面に、前記ダイポール素子の電界軸に平
行な面内で前記ダイポール素子の周囲を囲い込むよう
に、放射波長の1/2波長以上の長さを有する金属膜層
を矩形状に形成すると共に、その1つの前記電界軸方向
の辺の中央部に切れ込みを形成した無給電素子が貼付ら
れていることを特徴とする広帯域ダイポールアンテナ。3. A dipole element made of a thin metal layer is attached to the surface of a dielectric substrate that is sufficiently thinner than the emission wavelength, and the dipole element is attached to the back surface of the dielectric substrate in a plane parallel to the electric field axis of the dipole element. A metal film layer having a length of ½ wavelength or more of the emission wavelength is formed in a rectangular shape so as to surround the dipole element, and a notch is formed at the center of one of the sides in the electric field axis direction. Broadband dipole antenna characterized in that the parasitic element is attached.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17780893A JPH0738325A (en) | 1993-07-19 | 1993-07-19 | Wide band dipole antenna |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17780893A JPH0738325A (en) | 1993-07-19 | 1993-07-19 | Wide band dipole antenna |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0738325A true JPH0738325A (en) | 1995-02-07 |
Family
ID=16037456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17780893A Pending JPH0738325A (en) | 1993-07-19 | 1993-07-19 | Wide band dipole antenna |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0738325A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100449857B1 (en) * | 2001-12-26 | 2004-09-22 | 한국전자통신연구원 | Wideband Printed Dipole Antenna |
JP2006211447A (en) * | 2005-01-31 | 2006-08-10 | Toshiba Techno Network Kk | Planar antenna |
WO2010023752A1 (en) * | 2008-08-29 | 2010-03-04 | パイオニア株式会社 | Elongated antenna |
JP2012178810A (en) * | 2011-02-25 | 2012-09-13 | Acer Inc | Mobile communication device and antenna structure thereof |
-
1993
- 1993-07-19 JP JP17780893A patent/JPH0738325A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100449857B1 (en) * | 2001-12-26 | 2004-09-22 | 한국전자통신연구원 | Wideband Printed Dipole Antenna |
JP2006211447A (en) * | 2005-01-31 | 2006-08-10 | Toshiba Techno Network Kk | Planar antenna |
WO2010023752A1 (en) * | 2008-08-29 | 2010-03-04 | パイオニア株式会社 | Elongated antenna |
JP2012178810A (en) * | 2011-02-25 | 2012-09-13 | Acer Inc | Mobile communication device and antenna structure thereof |
US8684272B2 (en) | 2011-02-25 | 2014-04-01 | Acer Incorporated | Mobile communication device and antenna structure thereof |
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