JPH07106469A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a semiconductor device which is provided with a high heat-dissipating characteristic and in which the close adherence property of a heat-dissipating member to a sealing resin is enhanced and to provide its manufacturing method. CONSTITUTION:A meshlike member 12 is arranged, installed and fixed at the inside of a sealing resin 17, and a cap 10 on which a radiation fin 11 is erected and installed is attached to the upper part of the sealing resin 17. As a result, the close adherence property of the cap 10 to the sealing resin 17 becomes firm, it is possible to prevent the cap 10 from being separated and detached due to repeated use, and a high heat-dissipating effect by the radiation fin 11 is achieved. In addition, in a manufacturing method, the cap 10 is placed on a lower metal mold, a lead frame 15 on which a semiconductor element 13 is mounted is arranged at the upper part of the cap 10, and the cap 10 and the semiconductor element 13 are sealed simultaneously with the sealing resin 17. As a result, a degree of skill for a manufacturing technique is not required, and a semiconductor device is not damaged.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a semiconductor device in which a metal cap equipped with a heat radiation fin and a semiconductor element mounted on a lead frame are simultaneously resin-sealed. And its manufacturing method.

[0002]

2. Description of the Related Art In recent years, as electronic devices and information processing devices have become smaller and lighter, there has been a demand for higher density, higher integration and thinner semiconductor devices, and the amount of heat generated by semiconductor elements tends to increase. It is in. In particular, ultra-ultra-LSIs, bipolar LSIs, and the like are highly integrated and large-sized semiconductor elements having a large chip area, and the amount of heat generated by the semiconductor elements is large with the increase in current, so that heat radiation is required.

Therefore, in order to efficiently dissipate the heat generated from the semiconductor element, there has been developed, for example, one having a heat dissipation plate as shown in FIG. 4 attached to the upper part of the semiconductor device.

That is, in the semiconductor device shown in FIG. 4, 1 is a semiconductor element, 2 is an island on which the semiconductor element 1 is mounted via an insulating adhesive, and 3 is a semiconductor element 1.
Is a lead frame that connects the semiconductor element 1 to the external circuit board, and the island 2 with the
A bonding wire for electrically connecting the electrode pad to the lead frame 3 and a sealing resin 5 for sealing the semiconductor element 1, the bonding wire 4, etc., while leaving a part of the lead frame 3. 6 is made of a metal having a high thermal conductivity, such as aluminum, and is bonded to the main surface of the island 2 on the side where the semiconductor element 1 is not mounted with a thermal conductive adhesive and is attached to the upper part of the sealing resin 5. The heat generated by the semiconductor element 1 is efficiently dissipated to the atmosphere by the heat dissipation plate 6 which is a flat heat dissipation plate.

In order to attach the heat sink 6 to the semiconductor device, a recess 5a for mounting is formed on the upper part of the sealing resin 5. The recess 5a is a seal for sealing the semiconductor element 1 and the like with the sealing resin 5. If the shape of the mold used in the stopping process is transferred or if the mold cannot be manufactured, the semiconductor element 1
It is produced by machining the upper part of the sealing resin 5 that seals the above. Recesses produced in this way
Attach the heat sink 6 to 5a with a heat conductive adhesive and
Install 6.

[0006]

However, when the heat dissipation plate 6 made of metal and the sealing resin 6 are adhered to each other with an adhesive, the adhesive intervenes so that the heat can be transferred efficiently. This is difficult, and since the heat dissipation plate 6 and the sealing resin 6 have different thermal expansion coefficients, there is a problem that the adhesive strength of the adhesive portion is reduced by repeated use and the heat dissipation plate 6 may be separated.

Furthermore, when the recess 5a is produced by transferring the shape of the mold in the sealing step, it is necessary to obtain a predetermined shape of the recess 5a by shrinkage of the sealing resin 5 or thermal deformation of the mold. Requires skill in manufacturing technology, and the concave portion 5a can be machined.
In the case of manufacturing, there is a problem that the semiconductor device may be damaged because not only the number of processing steps is increased but also fine processing is performed.

The present invention has been made in view of the above circumstances, and a heat radiation member for radiating the heat generated in a semiconductor element to the outside air is provided in the sealing resin, and a high heat radiation effect and adhesion are secured. An object of the present invention is to provide a semiconductor device and a manufacturing method thereof.

[0009]

In order to achieve the above object, the present invention provides a lead frame, a semiconductor element mounted on the lead frame, a sealing resin for sealing the semiconductor element, and a cross section. In a semiconductor device having a trapezoidal shape and a metal cap disposed above the semiconductor element and having heat dissipation fins erected on the outer surface side, a mesh member is provided at a trapezoidal bottom surface portion of the metal cap. It is characterized by being provided.

Further, according to the present invention, the step of melting the sealing resin for sealing the semiconductor element, the heat radiation fins are provided upright on the outer surface side of the trapezoidal cross section, and the mesh member is provided at the trapezoidal bottom surface portion. Placing the metal cap on the lower mold, placing the semiconductor element mounted on the lead frame above the metal cap so that the semiconductor element mounted on the lead frame faces downward, and upper part of the upper mold. And the step of simultaneously sealing the metal cap and the semiconductor element by filling the molten sealing resin.

[0011]

In the semiconductor device of the present invention, the metal cap is provided in the encapsulating resin because the trapezoidal bottom surface of the metal cap on which the heat radiation fins are provided is provided with the mesh member. By being provided, high heat dissipation characteristics can be obtained by the heat dissipation fins provided upright on the metal cap, and strong adhesion between the metal cap and the sealing resin can be obtained.

In the method for manufacturing a semiconductor device of the present invention, the metal cap having the trapezoidal bottom surface provided with the mesh-like member and the semiconductor element are simultaneously sealed with the molten sealing resin. The molten sealing resin permeates the inner surface side of the metal cap through the mesh-like member, whereby the metal cap is disposed inside the sealing resin, and the adhesion with the sealing resin is improved.

[0013]

Embodiments of the present invention will be described below with reference to the drawings. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention,
FIG. 2 is a perspective view of a cap according to an embodiment of the present invention, and FIG. 3 is a view showing a sealing process of a method for manufacturing a semiconductor device of the present invention.

In FIGS. 1 and 2, reference numeral 10 denotes a cap made of a metal having a high thermal conductivity, for example, aluminum, and having a trapezoidal cross section, and a radiation fin 11 is projected on the outer surface side of the cap 10. Like the cap 10, a mesh member 12 made of aluminum is provided on the trapezoidal bottom surface portion of the cap 10.

Further, 13 is a semiconductor element, 14 is an island on which the semiconductor element 13 is mounted via an insulating adhesive, and 15
Is a lead frame for mounting the island 14 on which the semiconductor element 13 is mounted and connecting the semiconductor element 13 to an external circuit board; and 16 is an electrode pad of the semiconductor element 13 and the lead frame 15
Is a bonding wire for electrically connecting the.

Reference numeral 17 denotes an encapsulating resin made of epoxy resin or the like for encapsulating the semiconductor element 13 and the bonding wires 16 while leaving a part of the lead frame 15. The encapsulating resin 17 has a mesh shape inside. With the member 12 disposed and fixed, the inner surface of the cap 10 is attached to the upper surface of the sealing resin 17, and the heat radiation fin 11 is provided on the outer surface side of the cap 10.
Is erected.

In the semiconductor device having the above-described structure according to the embodiment of the present invention, the cap 10 is provided with the mesh member 12 provided on the trapezoidal bottom surface portion of the cap 10 disposed and fixed inside the sealing resin 17. Is directly attached to the upper surface of the sealing resin 17,
Moreover, since the radiation fins 11 are provided upright on the outer surface side of the cap 10, the adhesion between the cap 10 and the sealing member 17 becomes strong, and the cap 10 can be separated from the sealing member 17 by repeated use. Is eliminated, and since there is no adhesive, heat can be transferred with high efficiency.
A high heat dissipation effect is achieved by the heat dissipation fin 11.

Next, the sealing step of the method of manufacturing the semiconductor device having the above-mentioned structure will be described.

The step of sealing the semiconductor device is performed by a transfer molding method. First, the sealing resin 17 for sealing the semiconductor element 13, the bonding wire 16 and the like is melted while leaving a part of the lead frame 15. . (Process P1).

While the sealing resin 17 is melted, the cap 10 is placed on the lower mold (not shown) with the heat radiation fin 11 facing downward, that is, the mesh member 12 facing upward. After mounting the cap 10, die bonding, wire bonding, etc. are performed,
With the semiconductor element 13 mounted on the lead frame 15 facing downward, that is, with the semiconductor element 13 facing the mesh member 12, the lead frame 15 is capped in the lower mold.
Place above 10. (Process P2, Process P3).

Subsequently, an upper mold (not shown) is fitted to the lower mold, and the sealing resin 17 melted in the resin melting step is filled from the upper part of the upper mold to fill the cap 10 and the semiconductor element 13 with each other. At the same time, the sealing resin 17 is used for sealing. At this time, the molten sealing resin 17 passes through the mesh member 12 and penetrates to the inner surface of the cap 10, and the mesh member 12 is disposed inside the sealing resin 17 and hardened in a fixed state. . After sealing with the sealing member 17,
The semiconductor device is completed by cutting and bending the lead frame 15. (Process P4).

By the way, according to the above-described method of manufacturing a semiconductor device, the cap 10 is placed on the lower mold, and the lead frame 15 on which the semiconductor element 13 is mounted is arranged above the cap 10. Since this is a method of simultaneously sealing the cap 10 and the semiconductor element 13 with the sealing resin 17, it is possible to easily manufacture a semiconductor device without requiring skill in manufacturing technology and without damaging the semiconductor device. It becomes possible.

In the above embodiment, the radiation fin 11 is formed so as to vertically project from the cap 10. However, the invention is not limited to this, and the radiation fin 11 may be a single-wafer type. Well, the same effect can be obtained.

Further, in the above embodiment, the mesh member 12 provided on the trapezoidal bottom surface portion of the cap 10 has a mesh on the entire surface, but the invention is not limited to this, and the mesh member 12 may be a trapezoidal bottom surface of the cap 10. It may be U-shaped so that the peripheral portion of the portion is disposed and fixed inside the sealing resin 17.

In the above embodiment, the semiconductor element 13 is positioned below the island 14 at the time of resin sealing, but a mechanism for holding the cap 10 on the upper die of the die is added to melt the element. It is also possible to fill the encapsulating resin 17 from the lower mold and perform resin encapsulation in a state where the semiconductor element 13 is located above the island 14, which is a normal form.

Further, the present invention is not limited to the above embodiments, and it goes without saying that various modifications can be made without departing from the gist of the present invention.

[0027]

As described in detail above, according to the semiconductor device of the present invention, the mesh member provided on the trapezoidal bottom surface portion of the metal cap is disposed and fixed inside the sealing resin,
Moreover, since the heat radiation fins are provided upright on the outer surface side of the metal cap attached to the upper portion of the sealing resin, the adhesion between the metal cap and the sealing member can be strengthened, It is possible to prevent the metal cap from coming off due to repeated use, and since no adhesive agent is interposed, highly efficient heat transfer is performed, and a high heat dissipation effect by the heat dissipation fins can be achieved.

According to the method of manufacturing a semiconductor device of the present invention, the metal cap is placed on the lower mold, and the lead frame on which the semiconductor element is mounted is arranged above the metal cap. Since the method of sealing the metal cap and the semiconductor element with the sealing resin at the same time, the semiconductor device can be easily manufactured without requiring any skill in manufacturing technology and without damaging the semiconductor device. can do.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a perspective view of a cap according to an embodiment of the present invention.

FIG. 3 is a diagram showing a sealing step of the method for manufacturing a semiconductor device of the present invention.

FIG. 4 is a cross-sectional view of a semiconductor device having a conventional heat sink.

[Explanation of symbols]

 10 ... Cap (metal cap) 11 ... Heat dissipation fin (heat dissipation fin) 12 ... Mesh member 13 ... Semiconductor element 15 ... Lead frame 17 ... Sealing resin

Claims (2)

[Claims] 1. A lead frame, a semiconductor element mounted on the lead frame, a sealing resin for sealing the semiconductor element, a trapezoidal cross section, and a heat radiation fin standing on the outer surface side. A semiconductor device comprising a metal cap disposed above a semiconductor element, wherein a mesh-like member is provided on a trapezoidal bottom surface portion of the metal cap. 2. A step of melting a sealing resin for sealing a semiconductor element, and a metal in which a heat radiation fin is erected on an outer surface side of a trapezoidal cross section and a mesh member is provided on a trapezoidal bottom surface portion. The step of placing the cap made on the lower mold, the step of placing the semiconductor element mounted on the lead frame above the metal cap so that the semiconductor element mounted on the lead frame faces downward, and the melting seal from the upper part of the upper mold. A method of manufacturing a semiconductor device comprising a step of filling a stop resin and simultaneously sealing the metal cap and the semiconductor element.