JPH04196239A - Semiconductor probe device - Google Patents
Semiconductor probe deviceInfo
- Publication number
- JPH04196239A JPH04196239A JP32692890A JP32692890A JPH04196239A JP H04196239 A JPH04196239 A JP H04196239A JP 32692890 A JP32692890 A JP 32692890A JP 32692890 A JP32692890 A JP 32692890A JP H04196239 A JPH04196239 A JP H04196239A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- gnd
- supply
- probe installation
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 88
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000009434 installation Methods 0.000 claims abstract description 38
- 238000007689 inspection Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体素子に探針をあて検査を行う半導体
探針装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor probe device that inspects a semiconductor element by placing a probe thereon.
第3図は従来の半導体探針装置を示す平面図であり、図
において、(1)は探針設置用絶縁基板、(2)はこの
探針設置用絶縁基板(1)に設けられた検査装置との電
気的接続をとるための配線パターン、(3)は半導体素
子上の電極に対応して設けられた探針群、(4)は電源
供給用探針、(5)はGND供給用探針てあり、(2+
−b 、および(2) −cはそれぞれ、探針設置用
絶縁基板(1)上に設けられた電源用探針設置面1およ
びGND用探針設置面である。また、(6)は通常の信
号用探針である。FIG. 3 is a plan view showing a conventional semiconductor probe device. In the figure, (1) is an insulating substrate for installing a probe, and (2) is an inspection device provided on this insulating substrate for installing a probe (1). Wiring pattern for electrical connection with the device, (3) is a group of probes provided corresponding to the electrodes on the semiconductor element, (4) is a probe for power supply, and (5) is for GND supply. There is a probe, (2+
-b and (2) -c are respectively a power supply probe installation surface 1 and a GND probe installation surface provided on the probe installation insulating substrate (1). Further, (6) is a normal signal probe.
次に動作について説明する。探針設置用絶縁基板(1)
は半導体検査装置にとりつけられる。検査装置からの電
気的信号は探針設置用絶縁基板(1)に設けられた配線
パターンを介して探針設置部分まで伝えられる。探針設
置部には半導体素子上の電極に対応して設けられた探針
群かハンダ付または他の加工により接続されている。探
針の中で特に電源用探針(4)、GND用探針(5)は
、他の信号用探針(6)と異なり、探針設置用絶縁基板
(1)上に設けられた電源用探針設置面(2+−b、G
ND用探針設置面(2) −cに設けている。探針設置
部分まで伝えられた電気的信号は上記の探針を介して半
導体素子上の電極と電気的に接続した状態となり素子の
検査か実施される。Next, the operation will be explained. Insulating substrate for probe installation (1)
is attached to semiconductor inspection equipment. Electrical signals from the inspection device are transmitted to the probe installation portion via a wiring pattern provided on the probe installation insulating substrate (1). A group of probes provided corresponding to electrodes on the semiconductor element is connected to the probe installation portion by soldering or other processing. Among the probes, the power supply probe (4) and the GND probe (5) are different from other signal probes (6) in that they are equipped with a power supply provided on the insulating substrate for probe installation (1). probe installation surface (2+-b, G
It is provided on the ND probe installation surface (2) -c. The electrical signal transmitted to the probe installation portion is electrically connected to the electrode on the semiconductor element via the probe, and the element is inspected.
従来の半導体探針装置は以上のように構成されているの
で、探針設置用絶縁基板の中に電源用。Conventional semiconductor probe devices are configured as described above, so a power source is installed inside the insulating substrate for installing the probe.
およびGND用探針設置を目的とするノ(ターン面を構
成するために、絶縁基板を切削する工程か必須であり、
通常の基板製作よりも加工費か増大するばかりてな(探
針を設置する工程においては、上記探針を複数段の構造
にするために技術的に困難てあり、探針の交換、修復か
てきないといった問題点かあった。And for the purpose of installing a GND probe (in order to configure the turn surface, the process of cutting the insulating substrate is essential,
The processing cost will only increase compared to normal board production (the process of installing the probe is technically difficult due to the multi-stage structure of the probe, so there is no need to replace or repair the probe). There were some problems such as not being able to do so.
この発明は上記のような問題点を解消するためになされ
たもので、探針設置用絶縁基板の製作において、電源供
給、GND供給用探針設置面を製作するための切削加工
工程を不要にし、また電源GND用探針を設置する際の
工程を簡略化し交換、修復を可能とする半導体探針装置
を得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and eliminates the need for the cutting process for producing the probe mounting surface for power supply and GND supply in the production of an insulating substrate for probe installation. Another object of the present invention is to provide a semiconductor probe device that simplifies the process of installing a power supply GND probe and enables replacement and repair.
この発明に係る半導体探針装置は、電気的信号を伝える
配線パターンにおいて電源供給用、及びGND供給用パ
ターンを絶縁基板上の探針設置用加工領域において、共
通の導電l々ターンとして構成するとともに、探針を設
けた場合に、電源供給用端子部とGND供給用端子部と
に分離、独立したパターンに加工できる様な導電ノ々タ
ーンを構成したものである。In the semiconductor probe device according to the present invention, in the wiring pattern for transmitting electrical signals, the power supply and GND supply patterns are configured as common conductive turns in the probe installation processing area on the insulating substrate. When a probe is provided, the conductive no-turns can be separated into a power supply terminal part and a GND supply terminal part and processed into independent patterns.
この発明における電源供給用、及びGND供給用パター
ンは、探針設置用の加工領域において共通の導電パター
ンとして構成され、また探針設置後の加工により独立し
た電源供給用、GND供給用端子部として機能する。The power supply and GND supply patterns in this invention are configured as a common conductive pattern in the processing area for probe installation, and can also be formed as independent power supply and GND supply terminals by processing after the probe installation. Function.
以下、この発明を図に基づいて説明する。第1図はこの
発明の一実施例による半導体探針装置を示す平面図てあ
り、図において、(7)は電源及びGND供給用共通導
電パターン(7)−aは共通導電パターン(7)と電源
用配線パターンとを接続するノくターン部、(7) −
bはスルホール、(7) −cは共通導電パターン(7
)とGND用配線パターンを接続するパターン部、(7
1−dはスルホールである。(8)は共通導電パターン
(7)を探針設置後加工し分離した探針設置領域を示す
。Hereinafter, this invention will be explained based on the drawings. FIG. 1 is a plan view showing a semiconductor probe device according to an embodiment of the present invention. In the figure, (7) is a common conductive pattern (7) for power supply and GND supply, and (7)-a is a common conductive pattern (7). Turn part for connecting with power supply wiring pattern, (7) −
b is a through hole, (7) -c is a common conductive pattern (7
) and the pattern part connecting the GND wiring pattern, (7
1-d is a through hole. (8) shows a probe installation area where the common conductive pattern (7) is processed and separated after the probe installation.
なお、従来例と同一部分については、同一符号を付し説
明を省略した。Note that the same parts as those in the conventional example are given the same reference numerals and explanations are omitted.
次に作用について説明する。Next, the effect will be explained.
検査設置からの電気的信号は探針設置用絶縁基板(1)
の配線パターンを介して探針設置領域に導かれる。電源
及びGND供給用配線パターンはスルホール(7) −
b 、 (7) −d 、及び接続用パターン(7)
−a 。Electrical signals from the inspection installation are sent to the insulating substrate for probe installation (1)
is guided to the probe installation area via the wiring pattern. The wiring pattern for power supply and GND supply is through hole (7) -
b, (7) -d, and connection pattern (7)
-a.
(7) −cを介して電源及びGND供給用共通導電パ
ターンに接続される。共通導電パターン(7)上に設置
された電源供給用探針(4)、GND供給用探針は、加
工領域(8)によってそれぞれ独立した電源用探針設置
面、およびGND用探針設置面を構成することにより(
7) −a、(7) −b、(7) −c、 (7)
−dを介して電源及びGNDを供給され、探針を介して
半導体素子上の電極に電源及びGNDを供給する。(7) Connected to the common conductive pattern for power supply and GND supply via -c. The power supply probe (4) and the GND supply probe installed on the common conductive pattern (7) have independent power supply probe installation surfaces and GND probe installation surfaces depending on the processing area (8). By configuring (
7) -a, (7) -b, (7) -c, (7)
-d is supplied with power and GND, and the power and GND are supplied to the electrode on the semiconductor element through the probe.
なお、上記実施例では共通導電パターンとして電源供給
パターンと、GND供給パターンを構成した場合につい
て示したか、共通導電パターンを複数個の電源及びGN
Dについて構成してもよい。In addition, in the above embodiment, the case where a power supply pattern and a GND supply pattern are configured as a common conductive pattern is shown, or the common conductive pattern is used as a common conductive pattern for a plurality of power supply and GND supply patterns.
It may be configured for D.
以上のように、この発明によれば、探針設置用絶縁基板
に電源用探針設置面及びGND用探針設置面を、共通導
電パターンとして構成し、かつ探針設置後それぞれ独立
した領域を構成可能な構造としたのて、探針設置用絶縁
基板の製作か安価にてき、また探針の修復、交換か容易
にてきる探針設置か得られる効果がある。As described above, according to the present invention, the power supply probe installation surface and the GND probe installation surface are configured as a common conductive pattern on the insulating substrate for probe installation, and after the probe installation, separate areas are formed. Since the structure is configurable, the insulating substrate for installing the probe can be manufactured at low cost, and the probe can be easily repaired or replaced.
第1図はこの発明の一実施例による半導体探針装置を示
す平面図、第2図は第1図の断面図、第3図は従来の半
導体探針装置を示す平面図、第4図は従来の半導体探針
装置を示す断面図である。
図において、(4)は電源供給用探針、(5)はGND
供給用探針、(7)は電源及びGND供給用の共通導電
パターン、(8)は加工後の独立した探針設置領域であ
る。
なお、図中、同一符号は同−又は相当部分を示す。
代 理 人 大 岩 増 雄第1図
7−b 電清用カし一ホールFIG. 1 is a plan view showing a semiconductor probe device according to an embodiment of the present invention, FIG. 2 is a sectional view of FIG. 1, FIG. 3 is a plan view showing a conventional semiconductor probe device, and FIG. 4 is a plan view showing a semiconductor probe device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a conventional semiconductor probe device. In the figure, (4) is the power supply probe, (5) is the GND
A supply probe, (7) is a common conductive pattern for power supply and GND supply, and (8) is an independent probe installation area after processing. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Agent: Masuo Oiwa Figure 1, 7-b, Electrolysis hole
Claims (1)
、検査装置との電気的接続をとるための電極パターンと
を設けた半導体探針装置において、前記半導体素子の電
源及びGND電位を供給する探針部の構成を、探針装置
の探針設置面に連続、かつ共有したパターンとし、また
、探針の設置状況により連続、かつ共有したパターンを
それぞれ独立したパターンに加工できる様に構成したこ
とを特徴とする半導体探針装置。In a semiconductor probe device provided with a probe for making an electrical connection with an electrode part of a semiconductor element and an electrode pattern for making an electrical connection with an inspection device, a power supply and a GND potential are supplied to the semiconductor element. The configuration of the probe section is such that it has a continuous and shared pattern on the probe installation surface of the probe device, and the continuous and shared pattern can be processed into independent patterns depending on the probe installation situation. A semiconductor probe device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32692890A JPH04196239A (en) | 1990-11-27 | 1990-11-27 | Semiconductor probe device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32692890A JPH04196239A (en) | 1990-11-27 | 1990-11-27 | Semiconductor probe device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04196239A true JPH04196239A (en) | 1992-07-16 |
Family
ID=18193332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32692890A Pending JPH04196239A (en) | 1990-11-27 | 1990-11-27 | Semiconductor probe device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04196239A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100470989B1 (en) * | 1997-09-10 | 2005-07-18 | 삼성전자주식회사 | Verification Probe Card |
-
1990
- 1990-11-27 JP JP32692890A patent/JPH04196239A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100470989B1 (en) * | 1997-09-10 | 2005-07-18 | 삼성전자주식회사 | Verification Probe Card |
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