JP7434710B2 - 光半導体素子、光半導体装置、光伝送システム、および光半導体装置の製造方法 - Google Patents
光半導体素子、光半導体装置、光伝送システム、および光半導体装置の製造方法 Download PDFInfo
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- JP7434710B2 JP7434710B2 JP2019021032A JP2019021032A JP7434710B2 JP 7434710 B2 JP7434710 B2 JP 7434710B2 JP 2019021032 A JP2019021032 A JP 2019021032A JP 2019021032 A JP2019021032 A JP 2019021032A JP 7434710 B2 JP7434710 B2 JP 7434710B2
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- 239000004065 semiconductor Substances 0.000 title claims description 144
- 230000003287 optical effect Effects 0.000 title claims description 143
- 230000005540 biological transmission Effects 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title description 23
- 238000000034 method Methods 0.000 title description 16
- 239000000758 substrate Substances 0.000 claims description 45
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 50
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Description
図1から図4を参照して、本実施の形態に係る光半導体素子、および光半導体素子の製造方法について説明する。
図6を参照して、本実施の形態に係る光半導体素子10Aについて説明する。光半導体素子10Aは、光半導体素子10において表面にレジスト56を設けた形態である。従って、光半導体素子10と同様の構成には同じ符号を付して、詳細な説明を省略する。
図7を参照して、本実施の形態に係る光半導体装置、および光伝送システムについて説明する。
12 基板
14 コンタクト層
16 下部DBR
24 活性領域
26 上部DBR
30 n側電極配線
32 酸化狭窄層
32a 非酸化領域
32b 酸化領域
34 層間絶縁膜
36 p側電極配線
38 出射面保護層
50、50-1、50-2、50A 突出部
52、52-1、52-2 ビア
54、54-1,54-2 バンプ
56 レジスト
58、58-1、58-2 導電部材
70 基板
72 絶縁膜
74 配線
75 電極パッド
76 レジスト
78、80 開口部
82 金属膜
84 導電部材
86 バックグラインドテープ
88 レジスト
89 開口部
90 ペースト
92 金属膜
94 ダイシングテープ
100 光半導体装置、102 光拡散板
200 光伝送システム、202 光ファイバ
300 探針
P ポスト
Claims (7)
- 半絶縁性の半導体基板と、
当該半導体基板の表面側に形成され、表面側から光を出射または受光する柱状体と、
前記柱状体と接続された表面側の電極と、
前記半導体基板の裏面側に形成された裏面側の電極と、
前記半導体基板を貫通して前記表面側の電極と前記裏面側の電極を接続するとともに、前記半導体基板の表面側に前記表面側の電極より突出した突出部を有する導電部材と、
を備え、
前記柱状体と前記導電部材とは、分離して配置され、
前記突出部は前記柱状体の上面を越える高さを有する、
光半導体素子。 - 前記導電部材と前記表面側の電極とは、前記半導体基板の前記柱状体が形成された側の面で接続されている
請求項1に記載の光半導体素子。 - 前記裏面側の電極に形成されたバンプをさらに備える
請求項1又は請求項2に記載の光半導体素子。 - 前記表面側の電極は平面視で閉形状の電極を含み、前記突出部は平面視で前記閉形状の電極の少なくとも一部と接続されている
請求項1から請求項3のいずれか1項に記載の光半導体素子。 - 請求項1から請求項4のいずれか1項に記載の光半導体素子と、
前記光半導体素子に光結合される光学部材と、を備え、
前記光学部材は、前記突出部によって前記柱状体との位置関係が規定される
光半導体装置。 - 前記光半導体素子が発光素子であり、
前記光学部材が前記光半導体素子から出射された光を外部に拡散する光拡散部材である
請求項5に記載の光半導体装置。 - 請求項5に記載の光半導体装置と、
前記光半導体素子から出射された光または前記光半導体素子で受光される光を伝送する前記光学部材としての光伝送路と、
を備える光伝送システム。
Priority Applications (4)
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JP2019021032A JP7434710B2 (ja) | 2019-02-07 | 2019-02-07 | 光半導体素子、光半導体装置、光伝送システム、および光半導体装置の製造方法 |
CN201980088132.5A CN113711366B (zh) | 2019-02-07 | 2019-12-03 | 光半导体元件、光半导体装置、光传输系统以及光半导体装置的制造方法 |
PCT/JP2019/047233 WO2020162011A1 (ja) | 2019-02-07 | 2019-12-03 | 光半導体素子、光半導体装置、光伝送システム、および光半導体装置の製造方法 |
US17/335,201 US12119417B2 (en) | 2019-02-07 | 2021-06-01 | Optical semiconductor element, optical semiconductor device, optical transmission system, and method of manufacturing optical semiconductor device |
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JP2019021032A JP7434710B2 (ja) | 2019-02-07 | 2019-02-07 | 光半導体素子、光半導体装置、光伝送システム、および光半導体装置の製造方法 |
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JP2020129587A JP2020129587A (ja) | 2020-08-27 |
JP7434710B2 true JP7434710B2 (ja) | 2024-02-21 |
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JP (1) | JP7434710B2 (ja) |
CN (1) | CN113711366B (ja) |
WO (1) | WO2020162011A1 (ja) |
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WO2022239653A1 (ja) * | 2021-05-14 | 2022-11-17 | ローム株式会社 | 半導体発光装置 |
CN113783105B (zh) | 2021-09-07 | 2022-11-01 | 常州纵慧芯光半导体科技有限公司 | 一种垂直腔面发射激光器及其制备方法 |
CN114069391B (zh) * | 2021-11-11 | 2023-06-16 | 常州纵慧芯光半导体科技有限公司 | 一种垂直腔面发射激光器以及制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007287849A (ja) | 2006-04-14 | 2007-11-01 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2010219342A (ja) | 2009-03-17 | 2010-09-30 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、光伝送装置およびその製造方法 |
JP2011166150A (ja) | 2010-02-11 | 2011-08-25 | Lg Innotek Co Ltd | 発光素子 |
JP2012119428A (ja) | 2010-11-30 | 2012-06-21 | Toyoda Gosei Co Ltd | 発光装置およびその製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6937637B1 (en) * | 2000-02-01 | 2005-08-30 | Research Investment Network, Inc. | Semiconductor laser and associated drive circuit substrate |
JP2001308109A (ja) * | 2000-04-21 | 2001-11-02 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP3966067B2 (ja) * | 2002-04-26 | 2007-08-29 | 富士ゼロックス株式会社 | 表面発光型半導体レーザ素子およびその製造方法 |
JP3838218B2 (ja) * | 2003-05-19 | 2006-10-25 | ソニー株式会社 | 面発光型半導体レーザ素子及びその製造方法 |
US7289547B2 (en) * | 2003-10-29 | 2007-10-30 | Cubic Wafer, Inc. | Laser and detector device |
JP4899344B2 (ja) | 2004-06-29 | 2012-03-21 | 富士ゼロックス株式会社 | 表面発光型半導体レーザおよびその製造方法 |
US7352787B2 (en) * | 2004-06-29 | 2008-04-01 | Fuji Xerox Co., Ltd. | Vertical cavity surface emitting laser diode and process for producing the same |
JP4349278B2 (ja) | 2004-12-24 | 2009-10-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US20090323746A1 (en) * | 2005-06-16 | 2009-12-31 | Susumu Ohmi | Nitride Semiconductor Laser and Method for Fabricating Same |
JP4821967B2 (ja) | 2005-08-25 | 2011-11-24 | 富士ゼロックス株式会社 | 半導体レーザ装置およびこれを用いた光送信装置 |
JP2007288089A (ja) * | 2006-04-20 | 2007-11-01 | Opnext Japan Inc | 光素子および光モジュール |
JP2010192650A (ja) * | 2009-02-18 | 2010-09-02 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および光情報処理装置 |
CN101877336B (zh) * | 2009-04-30 | 2012-07-25 | 台湾积体电路制造股份有限公司 | 集成电路结构与形成集成电路结构的方法 |
US8759949B2 (en) | 2009-04-30 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside structures having copper pillars |
TW201743523A (zh) * | 2016-06-07 | 2017-12-16 | 村田製作所股份有限公司 | 垂直諧振器面發光雷射 |
FR3061354B1 (fr) * | 2016-12-22 | 2021-06-11 | Commissariat Energie Atomique | Procede de realisation de composant comprenant des materiaux iii-v et des contacts compatibles de filiere silicium |
CN107093840B (zh) * | 2017-07-07 | 2019-10-08 | 北京工业大学 | 独立可寻址液晶调谐垂直腔面发射激光器阵列及制备方法 |
JP6966517B2 (ja) * | 2018-11-13 | 2021-11-17 | 株式会社ダイセル | 光学部材、該光学部材を含むレーザーモジュール及びレーザーデバイス |
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- 2019-02-07 JP JP2019021032A patent/JP7434710B2/ja active Active
- 2019-12-03 CN CN201980088132.5A patent/CN113711366B/zh active Active
- 2019-12-03 WO PCT/JP2019/047233 patent/WO2020162011A1/ja active Application Filing
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- 2021-06-01 US US17/335,201 patent/US12119417B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007287849A (ja) | 2006-04-14 | 2007-11-01 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2010219342A (ja) | 2009-03-17 | 2010-09-30 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、光伝送装置およびその製造方法 |
JP2011166150A (ja) | 2010-02-11 | 2011-08-25 | Lg Innotek Co Ltd | 発光素子 |
JP2012119428A (ja) | 2010-11-30 | 2012-06-21 | Toyoda Gosei Co Ltd | 発光装置およびその製造方法 |
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US20210288193A1 (en) | 2021-09-16 |
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