JP7471171B2 - Substrate Processing Equipment - Google Patents

Description

This disclosure relates to a substrate processing apparatus.

In substrate processing equipment, splashes of processing liquids such as chemicals may occur during wafer processing. Ribbon-type leak sensors have been proposed as devices for detecting liquid leaks.

JP 2015-224880 A

This disclosure provides a substrate processing apparatus that can detect the scattering of processing liquid at an early stage.

A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding and rotating unit that holds and rotates a substrate, an air supply unit that supplies air to the substrate held by the substrate holding and rotating unit, a processing liquid supply unit that supplies processing liquid to the substrate held by the substrate holding and rotating unit, and a rectifying member that is disposed between the air supply unit and the substrate holding and rotating unit and rectifies the air supplied from the air supply unit, the rectifying member including a base material having a main surface facing the substrate held by the substrate holding and rotating unit, a first conductive layer provided on the main surface, and a second conductive layer provided on the main surface and electrically insulated from the first conductive layer.

According to this disclosure, scattering of treatment liquid can be detected early.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment of the present invention. FIG. 2 is a diagram showing a schematic configuration of the etching unit. FIG. 3 is a diagram showing a schematic configuration of an example of a current plate. FIG. 4 is a schematic diagram showing the relationship between the chamber and the first and second conductive layers. FIG. 5 is an enlarged schematic view of a main part in FIG. FIG. 6 is a flow chart showing a procedure of substrate processing executed by the substrate processing system. FIG. 7 is a schematic diagram showing a state in which liquid is attached. FIG. 8 is a diagram showing electrical resistance depending on the state of adhesion of liquid. 9A to 9C are cross-sectional views showing a method for manufacturing a current plate according to the first example. FIG. 10 is a diagram showing a schematic configuration of a current plate according to the second example. 11A to 11C are cross-sectional views showing a method for manufacturing a current plate according to the second example. FIG. 12 is a diagram showing a schematic configuration of a current plate according to the third example. FIG. 13 is a diagram showing a schematic configuration of a current plate according to the fourth example. FIG. 14 is a schematic diagram showing a conductive layer provided on the maintenance panel. FIG. 15 is a schematic diagram showing the relationship between the chamber and the first and second conductive layers. FIG. 16 is an enlarged schematic view of a main part in FIG.

Embodiments of the present disclosure will be described below with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same or corresponding reference numerals, and the description thereof may be omitted.

<Configuration of Substrate Processing System>
First, the configuration of a substrate processing system according to an embodiment will be described. Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment. In the following, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as a vertical upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are provided adjacent to each other.

The loading/unloading station 2 includes a carrier placement section 11 and a transport section 12. A number of carriers C, each of which holds a number of wafers W in a horizontal position, are placed on the carrier placement section 11.

The transfer section 12 is provided adjacent to the carrier placement section 11, and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving horizontally and vertically and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of etching units 16. The plurality of etching units 16 are arranged side by side on both sides of the transport section 15. Note that the number of etching units 16 is not limited to the example shown in FIG. 1.

The transfer section 15 has a substrate transfer device 17 therein. The substrate transfer device 17 has a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 can move horizontally and vertically and rotate around a vertical axis, and uses the wafer holding mechanism to transfer the wafer W between the delivery section 14 and the etching unit 16.

The etching unit 16 performs a predetermined substrate processing on the wafer W transported by the substrate transport device 17.

The substrate processing system 1 also includes a control device 4. The control device 4 includes a control unit 18 and a memory unit 19.

The control unit 18 includes, for example, a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input/output ports, and various other circuits. The control unit 18 controls the operation of the substrate processing system 1 by having the CPU execute a program stored in the ROM using the RAM as a working area.

The above program may be recorded on a computer-readable recording medium and installed from the recording medium into the memory unit 19 of the control device 4. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), a memory card, etc.

The memory unit 19 is realized, for example, by a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

<Configuration of Etching Unit>
Next, a description will be given of the configuration of the etching unit 16. FIG.

As shown in FIG. 2, the etching unit 16 includes a chamber 20, a substrate holding mechanism 30, a supply unit 40, and a collection cup 50.

The chamber 20 houses the substrate holding mechanism 30, the supply unit 40, and the collection cup 50. For example, the chamber 20 is grounded. A fan filter unit (FFU) 21 is provided on the ceiling of the chamber 20. The FFU 21 creates a downflow within the chamber 20. The chamber 20 is an example of a housing, and the FFU 21 is an example of an air supply unit.

The substrate holding mechanism 30 includes a holding part 31, a support part 32, and a drive part 33. The holding part 31 holds the wafer W horizontally. The wafer W is held by the holding part 31 with the surface on which the film to be etched is formed facing upward.

In this embodiment, the holding unit 31 has multiple gripping units 31a, and holds the wafer W by gripping the peripheral portion of the wafer W using the multiple gripping units 31a, but this is not limited thereto, and the holding unit 31 may be a vacuum chuck that holds the wafer W by suction, etc.

The support column 32 is a member extending in the vertical direction, its base end is rotatably supported by the drive unit 33, and its tip end supports the holder 31 horizontally. The drive unit 33 rotates the support column 32 around a vertical axis. The substrate holding mechanism 30 rotates the holder 31 supported by the support column 32 by rotating the support column 32 using the drive unit 33, thereby rotating the wafer W held by the holder 31.

The supply unit 40 is disposed above the wafer W held in the holding unit 31. One end of a supply path 41 is connected to the supply unit 40, and the other end of the supply path 41 is connected to a supply source 42 of the processing liquid. A flow rate adjustment valve 43 capable of opening and closing the supply path 41 and adjusting the supply flow rate of the processing liquid is inserted in the middle of the supply path 41. Therefore, when the flow rate adjustment valve 43 is opened, the processing liquid is supplied from the supply unit 40 to the wafer W held in the holding unit 31. In this way, the processing liquid is supplied to the wafer W. The processing liquid is, for example, pure water (DIW), an aqueous solution (SC1 liquid) of NH ₄ OH (ammonium hydroxide) and H ₂ O ₂ (hydrogen peroxide), dilute hydrofluoric acid (DHF), isopropyl alcohol (IPA), or the like. 2 illustrates one set of the supply unit 40, the supply path 41, the supply source 42, and the flow rate adjustment valve 43, but a set of the supply unit 40, the supply path 41, the supply source 42, and the flow rate adjustment valve 43 is provided for each processing liquid. The processing liquid may be supplied from the rotation center of the holding unit 31 toward the center of the back surface of the wafer W. For example, a configuration corresponding to the supply unit 40, the supply path 41, the supply source 42, and the flow rate adjustment valve 43 may be provided on the back surface side of the wafer W.

The collection cup 50 is disposed to surround the holding part 31, and collects the processing liquid scattered from the wafer W due to the rotation of the holding part 31. A drainage port 51 is formed at the bottom of the collection cup 50, and the processing liquid collected by the collection cup 50 is discharged from the drainage port 51 to the outside of the etching unit 16. In addition, an exhaust port 52 is formed at the bottom of the collection cup 50, which discharges the gas supplied from the FFU 21 to the outside of the etching unit 16.

Inside the chamber 20, a straightening plate 60 is provided below the FFU 21. The straightening plate 60 is an example of a straightening member.

<Structure of the flow plate>
Next, a description will be given of the configuration of the current plate 60. Fig. 3 is a diagram showing a schematic configuration of an example of the current plate 60. Fig. 3(a) is a bottom view, and Fig. 3(b) is a cross-sectional view.

As shown in FIG. 3, the rectifying plate 160 according to the first example of the rectifying plate 60 includes a plate-shaped substrate 61, a first conductive layer 63, and a second conductive layer 64. For example, the substrate 61 is made of an insulating material. The substrate 61 is made of resin such as polyvinyl chloride (PVC), polypropylene (PP), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), etc. The first conductive layer 63 and the second conductive layer 64 are provided on the lower surface 62 of the substrate 61. The substrate 61 has a rectangular planar shape with two sides parallel to the X-axis direction and two sides parallel to the Y-axis direction. The first conductive layer 63 and the second conductive layer 64 are provided near the center of the substrate 61 in the X-axis direction so as to extend in the Y-axis direction, and a gap 65 exists between the first conductive layer 63 and the second conductive layer 64. The gap 65 is located, for example, vertically above the support portion 32. The first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other. The width of the gap 65 is, for example, 2 mm or more and 20 mm or less. The first conductive layer 63 and the second conductive layer 64 are made of a conductive material. When a conductive liquid adheres to the gap 65 so as to contact the first conductive layer 63 and the second conductive layer 64, the first conductive layer 63 and the second conductive layer 64 are electrically connected to each other. That is, the gap 65 functions like a switch that switches on/off. It is preferable that the first conductive layer 63 and the second conductive layer 64 are resistant to corrosion by the processing liquid. Examples of conductive materials include precious metals such as gold and platinum. Examples of conductive materials include tin oxide, antimony-doped tin oxide (ATO), and tin-doped indium oxide. A plurality of through holes 69 are formed in the rectifying plate 160. The through holes 69 penetrate the first conductive layer 63 and the second conductive layer 64. The first conductive layer 63 and the second conductive layer 64 have a thickness of, for example, 0.1 μm or more. The first conductive layer 63 and the second conductive layer 64 may have a thickness of 0.1 μm or more and 0.3 μm or less. The first conductive layer 63 and the second conductive layer 64 have a sheet resistance of, for example, about 10 ⁵ Ω/sq to 10 ¹¹ Ω/sq. The through hole 69 has a diameter of, for example, about 3 mm to 5 mm. The lower surface 62 is an example of a main surface.

The straightening plate 60 is fixed, for example, to a maintenance panel provided in the chamber 20. FIG. 4 is a schematic diagram showing the relationship between the chamber 20 and the first conductive layer 63 and second conductive layer 64. FIG. 4(a) shows the configuration when the maintenance panel is viewed from the front, and FIG. 4(b) shows the configuration when the maintenance panel is viewed from the side. FIG. 5 is a schematic diagram showing an enlarged view of the main part in FIG. 4(a).

As shown in Figures 4 and 5, the maintenance panel 23 is provided on the side wall 22 facing the shutter 24 at the loading/unloading port of the chamber 20 for the wafer W. The maintenance panel 23 is opened when performing maintenance on the inside of the chamber 20.

A clip 71 having electrical conductivity is attached to the rectifying plate 60 so as to contact the first conductive layer 63 on the lower surface 62 side. The clip 71 clamps the rectifying plate 60 in the Z-axis direction. The clip 71 contains, for example, a conductive resin. The clip 71 is fixed to the maintenance panel 23 by a bolt 72 inserted from outside the maintenance panel 23 and a nut 73 fitted to the screw tip of the bolt 72. That is, the clip 71 has an opening provided between one end that contacts the upper surface of the rectifying plate 60 and the other end that contacts the lower surface, and the screw tip of the bolt 72 passes through this opening, and the nut 73 is fitted into the penetrated portion. The bolt 72 and the nut 73 are electrically conductive. The bolt 72 and the nut 73 contain, for example, a conductive resin. On the outside of the maintenance panel 23, a round crimp terminal 74 connected to one end of a cable 75 is attached between the head of the bolt 72 and the maintenance panel 23. Therefore, the first conductive layer 63 is electrically connected to the cable 75 via the clip 71, the bolt 72, and the round crimp terminal 74.

Similar to clip 71, a conductive clip (not shown) is attached to the rectifier plate 60 so as to contact the second conductive layer 64 on the underside 62 side. This clip is also fixed to the maintenance panel 23 with a conductive bolt and nut (not shown), and a round crimp terminal 76 connected to one end of a cable 77 is attached between this bolt and the maintenance panel 23. Therefore, the second conductive layer 64 is connected to the cable 77 via the clip, the bolt, and the round crimp terminal 76.

A resistance meter 78 is connected between the other end of the cable 75 and the other end of the cable 77. The resistance meter 78 mainly measures the resistance of a circuit consisting of the metal part from the cable 75 to the first conductive layer 63, the metal part from the cable 77 to the second conductive layer 64, and the switch (gap 65) between the first conductive layer 63 and the second conductive layer 64. When the first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other, the resistance measured by the resistance meter 78 is substantially the resistance of the insulating substrate 61. When a conductive liquid adheres to the gap 65 so as to contact the first conductive layer 63 and the second conductive layer 64, the resistance measured by the resistance meter 78 decreases. For example, the measurement result by the resistance meter 78 is transmitted to the control device 4, and the control device 4 controls the substrate processing system 1 according to the measurement result.

The round crimp terminals 74 and 76, the bolt 72, and the bolt connected to the round crimp terminal 76 are covered with an insulating electrode cover 25. This is to prevent changes in electrical resistance due to the adhesion of foreign matter from outside the chamber 20.

The baffle plate 60 may be fixed to the side wall 22 of the chamber 20 by a mechanism similar to that used to fix it to the maintenance panel 23.

<Specific Operation of the Substrate Processing System>
Next, a description will be given of a specific operation of the substrate processing system 1. Fig. 6 is a flow chart showing a procedure of substrate processing executed by the substrate processing system 1. Each device included in the substrate processing system 1 executes each processing procedure shown in Fig. 4 under the control of the control unit 18.

As shown in FIG. 6, in the substrate processing system 1, first, a wafer W is loaded into the etching unit 16 (step S101). Specifically, the substrate transfer device 13 in the loading/unloading station 2 removes the wafer W from the carrier C placed on the carrier placement section 11, and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is removed from the transfer section 14 by the substrate transfer device 17 in the processing station 3, and loaded into the etching unit 16. The wafer W loaded into the etching unit 16 is held by the holder 31 of the etching unit 16.

Next, in the substrate processing system 1, an etching process is performed (step S102). In the etching process, the holder 31 holding the wafer W is rotated by the drive unit 33, and a processing liquid for etching is supplied from the supply unit 40 to the wafer W held by the holder 31. In addition, the holder 31 holding the wafer W is rotated by the drive unit 33, and a processing liquid for rinsing is supplied from the supply unit 40 to the wafer W held by the holder 31.

Next, in the substrate processing system 1, a drying process is performed (step S103). In the drying process, the supply of the rinsing processing liquid is stopped while continuing to rotate the wafer W. This removes the processing liquid remaining on the wafer W, and the wafer W is dried.

Next, in the substrate processing system 1, an unloading process is performed (step S104). In the unloading process, the wafer W after drying process is unloaded from the etching unit 16 by the substrate transfer device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transfer device 13. This completes the series of substrate processing steps for one wafer W.

During this series of substrate processing, the FFU 221 creates a downflow of air within the chamber 20. The baffle plate 60 creates a pressure loss in the downflow of air created by the FFU 21, and functions as a positive pressure buffer. Therefore, the baffle plate 60 adjusts the flow rate of the downflow.

<Function of the air straightening plate>
During the etching process (step S102), the processing liquid supplied from the supply unit 40 or the processing liquid supplied toward the back surface of the wafer W may be scattered. The scattering of the processing liquid may occur, for example, when the wafer W breaks during rotation, when the force of the gripping unit 31a to hold the wafer W is insufficient and the wafer W spins idly, etc. In addition, the recipe for processing the wafer W may be such that scattering of the processing liquid is likely to occur. When such scattering of the processing liquid occurs, the processing liquid may reach parts in the chamber 20 that the processing liquid would not reach if the scattering of the processing liquid did not occur, and cleaning of the chamber 20 may be required. In particular, when the wafer W is cracked while the processing liquid is being supplied toward the back surface of the wafer W, the processing liquid spreads in the chamber 20 like a fountain, and the number of steps for recovery increases. When the wafer W spins idly, the yield of semiconductor devices manufactured from the wafer W may decrease.

In this embodiment, the first conductive layer 63 and the second conductive layer 64 are provided on the rectifying plate 160, and when a conductive liquid adheres to the gap 65 between them so as to contact the first conductive layer 63 and the second conductive layer 64, the first conductive layer 63 and the second conductive layer 64 are electrically connected to each other. FIG. 7 is a schematic diagram showing the state of liquid adhesion, and FIG. 8 is a diagram showing the electrical resistance according to the state of liquid adhesion. FIG. 7(a) shows a state S0 in which no liquid adheres to the gap 65. FIG. 7(b) shows a state S1 in which liquid adheres to the gap 65 at a position near the maintenance panel 23 of the rectifying plate 160. FIG. 7(c) shows a state S2 in which liquid adheres to the gap 65 at a position away from the maintenance panel 23 of the rectifying plate 160.

In a state S0 ( FIG. 7( a )) in which no liquid is attached to the gap 65, the first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other. For this reason, the resistance value R0 measured by the resistance meter 78 in the state S0 is substantially equal to the sum of the total resistance value R _M of the metal parts included in the circuit and the resistance value R _I of the insulating part of the substrate 61, as shown in FIG. 8 , and the resistance value R _I is extremely higher than the total resistance value R _M. Therefore, the resistance value R0 is substantially equal to the resistance value R _I.

In state S1 ( FIG. 7B ) where the conductive liquid 9 is attached to the gap 65 at a position near the maintenance panel 23 of the current plate 160 so as to contact the first conductive layer 63 and the second conductive layer 64, the first conductive layer 63 and the second conductive layer 64 are electrically connected to each other. Therefore, the resistance value R1 measured by the resistance meter 78 in state S1 is substantially equal to the sum of the total resistance value R _M of the metal parts included in the circuit and the resistance value R _L of the liquid 9, as shown in FIG.

In state S2 ( FIG. 7C ) where the liquid 9 is attached to the gap 65 at a position of the rectifying plate 160 away from the maintenance panel 23, the first conductive layer 63 and the second conductive layer 64 are electrically conductive to each other. For this reason, the resistance value R2 measured by the resistance meter 78 in state S2 is substantially equal to the sum of the total resistance value R _M of the metal parts included in the circuit and the resistance value R _L of the liquid 9, as shown in FIG.

Comparing state S1 and state S2, in state S1, the current path of the first conductive layer 63 and the second conductive layer 64 is shorter and the number of metal parts included in the circuit is smaller than in state S2. Therefore, in state S1, the total resistance value R _M is smaller than in state S2. Therefore, it is preferable to set the detection window A so as to include the resistance value measured by the resistance meter 78 when the liquid 9 adheres to the part of the gap 65 closest to the maintenance panel 23 and the resistance value measured by the resistance meter 78 when the liquid 9 adheres to the part of the gap 65 farthest from the maintenance panel 23. By setting the detection window A in this manner, it can be determined that the liquid 9 has adhered to the gap 65 when the resistance value measured by the resistance meter 78 falls within the range of the detection window A. Note that in state S0, the first conductive layer 63 and the second conductive layer 64 are not substantially included in the current path, so the total resistance value R _M is smaller than in state S1.

Under normal conditions where no splashing of the processing liquid occurs, the processing liquid does not adhere to the straightening plate 160. In other words, if no splashing of the processing liquid occurs, the state of the straightening plate 160 is maintained in state S0. Therefore, the measurement result (resistance value) by the resistance measuring device 78 does not fall within the detection window A, and the control device 4 receiving the measurement result determines that splashing of the processing liquid is not occurring.

In contrast, when splashing of the processing liquid occurs, a portion of the processing liquid is likely to adhere to the gap 65 as liquid 9. Then, when the liquid 9 adheres to the gap 65 and the measurement result (resistance value) by the resistance meter 78 falls within the detection window A, the control device 4 receives the measurement result and determines that splashing of the processing liquid has occurred. In response to this determination, the control device 4 can stop the etching process (step S102). In addition, the occurrence of splashing may be notified through a display device, speaker, etc. The control device 4 can also estimate the position where the liquid 9 has adhered based on the resistance value.

According to this embodiment, splashing of the processing liquid can be detected quickly and contamination of the inside of the chamber 20 caused by splashing of the processing liquid can be suppressed.

If the first conductive layer 63 and the second conductive layer 64 are corrosion-resistant to the processing liquid, even if the processing liquid adheres to the current plate 160, the current plate 160 can be reused by removing the current plate 160 from the maintenance panel 23, wiping off the processing liquid adhering to the current plate 160, and drying it. Such maintenance work can be performed easily in a short time. Therefore, even if the processing liquid splashes, the substrate processing system 1 can be quickly restored with a short downtime.

It is also possible to detect leakage of processing liquid using a ribbon-type leakage sensor, but compared to this embodiment, this cannot detect leakage unless a large amount of processing liquid adheres. Therefore, scattering of processing liquid cannot be detected at an early stage. In addition, ribbon-type leakage sensors cannot be reused unless the nonwoven fabric or the like that has been soaked with the liquid is dried.

In addition, if the material of the base material 61 is made of a material that is transparent to visible light, such as polyvinyl chloride (PVC), an optical sensor 68 can be installed above the straightening plate 60 (see FIG. 2), and the optical sensor 68 can be used to detect the presence or absence of the wafer W.

The through holes 69 do not need to be formed at a constant density, and the straightening plate 60 may include areas where the density of the through holes 69 is locally high and areas where the density of the through holes 69 is locally low. The diameter of the through holes 69 does not need to be constant. By adjusting the density and diameter of the through holes 69, it is possible to adjust the distribution and flow rate of the air supply.

In the rectifier plate 160, the first conductive layer 63 is formed so as to extend in the Y-axis direction in a portion of the gap 65 in the X-axis positive direction, but the first conductive layer 63 may be formed so as to cover the entire lower surface 62 of the gap 65 in the X-axis positive direction. Similarly, the first conductive layer 63 may be formed so as to cover the entire lower surface 62 of the gap 65 in the X-axis negative direction.

<Method of manufacturing the flow plate>
Next, a method for manufacturing the current plate 160 according to the first example shown in Fig. 3 will be described. Fig. 9 is a cross-sectional view showing the method for manufacturing the current plate 160 according to the first example.

First, as shown in FIG. 9(a), a substrate 61 is prepared, and a first conductive layer 63 and a second conductive layer 64 are formed on a lower surface 62 of the substrate 61 with a gap 65 between them. In forming the first conductive layer 63 and the second conductive layer 64, for example, a paste containing particles of the material constituting the first conductive layer 63 and the second conductive layer 64 is applied, and the paste is fired. The application of the paste can be performed, for example, by screen printing. Next, as shown in FIG. 9(b), a plurality of through holes 69 are formed in the composite of the substrate 61 and the first conductive layer 63 and the second conductive layer 64. The through holes 69 can be formed, for example, by machining. After the through holes 69 are formed, it is preferable to remove burrs that occurred during the formation of the through holes 69.

In this manner, the baffle plate 160 shown in FIG. 3 can be manufactured.

<Configuration of another example (second example) of the current plate>
Next, a description will be given of the configuration of another example (second example) of the current plate 60. Fig. 10 is a diagram showing a schematic configuration of the current plate according to the second example.

As shown in FIG. 10, the rectifying plate 260 according to the second example of the rectifying plate 60 includes a substrate 61 and a conductive layer 266. A groove 265 is formed in the conductive layer 266 and the substrate 61. The groove 265 divides the conductive layer 266 in half, one of which is the first conductive layer 63 and the other is the second conductive layer 64. As with the rectifying plate 160 according to the first example, the first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other. The groove 265 has a tapered shape that narrows from the vertical lower surface of the conductive layer 266 to the vertical upper surface. The maximum width of the groove 265 is, for example, 2 mm or more and 20 mm or less. The other configuration is the same as that of the first example.

<Second Example of Manufacturing Method of Straightening Plate>
Next, a description will be given of a method for manufacturing the current plate 260 according to the second example.

In the manufacturing method of the straightening plate 260 according to the second example, first, as shown in FIG. 11(a), a substrate 61 is prepared, and a conductive layer 266 is formed on the lower surface 62 of the substrate 61. In forming the conductive layer 266, for example, a paste containing particles of the material constituting the conductive layer 266 is applied, and the paste is baked. The paste can be applied by, for example, screen printing. Next, as shown in FIG. 11(b), a groove 265 that divides the conductive layer 266 in two is formed in the conductive layer 266 and the substrate 61. This forms the first conductive layer 63 and the second conductive layer 64. After that, a plurality of through holes 69 are formed in the composite of the substrate 61, the first conductive layer 63, and the second conductive layer 64. The through holes 69 can be formed, for example, by machining. After forming the through holes 69, it is preferable to remove burrs that occurred during the formation of the through holes 69.

<Configurations of Further Examples of Straightening Plates (Third and Fourth Examples)>
Next, configurations of further examples (third and fourth examples) of the straightening plate 60 will be described. Fig. 12 is a diagram showing a schematic configuration of the straightening plate according to the third example. Fig. 13 is a diagram showing a schematic configuration of the straightening plate according to the fourth example.

As shown in FIG. 12, the straightening plate 360 according to the third example of the straightening plate 60 includes a substrate 61, a first conductive layer 363, and a second conductive layer 364. The first conductive layer 363 and the second conductive layer 364 can be made of the same material as the first conductive layer 63 and the second conductive layer 64. The first conductive layer 363 and the second conductive layer 364 are arranged in a comb-like shape on almost the entire lower surface 62 of the substrate 61. The first conductive layer 363 includes a connecting portion 363A extending in the X-axis direction and a plurality of teeth 363B extending from the connecting portion 363A in the Y-axis negative direction. The connecting portion 363A and each tooth 363B are connected to each other. The second conductive layer 364 is arranged on the Y-axis negative side of the tips of the teeth 363B on the Y-axis negative side, and includes a connecting portion 364A extending in the X-axis direction and a plurality of teeth 364B extending from the connecting portion 364A in the Y-axis positive direction. The connecting portion 364A and each tooth portion 364B are connected to each other. In the X-axis direction, the tooth portion 363B and the tooth portion 364B are alternately arranged. Gaps 365 exist between the tooth portion 363B and the tooth portion 364B adjacent in the X-axis direction, between the connecting portion 363A and the tooth portion 364B adjacent in the Y-axis direction, and between the connecting portion 364A and the tooth portion 363B adjacent in the Y-axis direction. The first conductive layer 363 and the second conductive layer 364 are electrically insulated from each other. The width of the gap 365 is, for example, 2 mm or more and 20 mm or less. The gap 365 functions as a switch in the same way as the gap 65. Although not shown, the rectifying plate 360 also has a plurality of through holes 69 formed therein similar to those of the rectifying plate 160.

13, the rectifying plate 460 according to the fourth example of the rectifying plate 60 includes a substrate 61, a first conductive layer 463, and a second conductive layer 464. The first conductive layer 463 and the second conductive layer 464 can be made of the same material as the first conductive layer 63 and the second conductive layer 64. The first conductive layer 463 and the second conductive layer 464 are provided in a spiral shape on almost the entire lower surface 62 of the substrate 61. A part of the first conductive layer 463 and a part of the second conductive layer 464 are alternately arranged from the center of the lower surface 62 toward the outer edge. A gap 465 exists between the first conductive layer 463 and the second conductive layer 464. The first conductive layer 463 and the second conductive layer 464 are electrically insulated from each other. The width of the gap 465 is, for example, 2 mm or more and 20 mm or less. The gap 465 functions as a switch like the gap 65. Although not shown in the figure, the current plate 460 also has a number of through holes 69 formed therein, similar to those in the current plate 160.

In the straightening plate 360 of the third example and the straightening plate 460 of the fourth example, the gap 365 is formed over a wider area than in the straightening plate 160, making it even easier to detect splashes of the treatment liquid.

<Other Configurations for Detecting Splashing of Treatment Liquid>
Next, another configuration for detecting scattering of the processing liquid will be described. When the wafer W cracks while the processing liquid is being supplied from below to the rear surface of the wafer W, the processing liquid is likely to scatter vertically upward. However, the form of scattering of the processing liquid is not limited to this, and scattering of the processing liquid caused by the free rotation of the wafer W is likely to be horizontal rather than vertically upward. Therefore, it is preferable that the inner surface of the side wall 22 of the chamber 20 is also provided with a configuration similar to the first conductive layer 63 and the second conductive layer 64. For example, it is preferable that the inner surface of the maintenance panel 23 is provided with two conductive layers insulated from each other. FIG. 14 is a schematic diagram showing the conductive layers provided on the maintenance panel 23.

In the example shown in FIG. 14, a first conductive layer 563 and a second conductive layer 564 are provided on the inner surface of the maintenance panel 23. The first conductive layer 563 and the second conductive layer 564 can be made of the same material as the first conductive layer 63 and the second conductive layer 64. The first conductive layer 563 and the second conductive layer 564 are provided in a comb-like shape on the inner surface of the maintenance panel 23, similar to the first conductive layer 363 and the second conductive layer 364 in the third example. The first conductive layer 563 and the second conductive layer 564 are electrically insulated from each other, and a gap 565 exists between them. The width of the gap 565 is, for example, 1 mm or more and 20 mm or less.

The first conductive layer 563 and the second conductive layer 564 are connected to an external cable using, for example, a bolt or the like, in the same manner as the first conductive layer 63 and the second conductive layer 64. FIG. 15 is a schematic diagram showing the relationship between the chamber 20 and the first conductive layer 563 and the second conductive layer 564. FIG. 15(a) shows the configuration when the maintenance panel is viewed from the front, and FIG. 15(b) shows the configuration when the maintenance panel is viewed from the side. FIG. 16 is a schematic diagram showing an enlarged view of the main parts in FIG. 15(a).

A bolt 572 is inserted into the maintenance panel 23 from the outside, and a nut 573 is fitted onto the threaded tip of the bolt 572. The bolt 572 and the nut 573 are arranged so as to contact the first conductive layer 563. The bolt 572 and the nut 573 are conductive. The bolt 572 and the nut 573 contain, for example, a conductive resin. On the outside of the maintenance panel 23, a round crimp terminal 574 connected to one end of a cable 575 is attached between the head of the bolt 572 and the maintenance panel 23. Therefore, the first conductive layer 563 is electrically connected to the cable 575 via the nut 573, the bolt 572, and the round crimp terminal 574.

Similarly, a conductive bolt and nut (not shown) are arranged to contact the second conductive layer 564, and a round crimp terminal 576 connected to one end of a cable 577 is attached between the bolt and the maintenance panel 23. Thus, the second conductive layer 564 is connected to the cable 577 via the nut, bolt, and round crimp terminal 576.

A resistance meter 578 is connected between the other end of the cable 575 and the other end of the cable 577. The resistance meter 578 mainly measures the resistance of a circuit consisting of the metal part from the cable 575 to the first conductive layer 563, the metal part from the cable 577 to the second conductive layer 564, and the switch (gap 565) between the first conductive layer 563 and the second conductive layer 564. In a state in which the first conductive layer 563 and the second conductive layer 564 are electrically insulated from each other, the resistance value measured by the resistance meter 578 is substantially the resistance value of the insulating maintenance panel 23. When a conductive liquid adheres to the gap 565 so as to contact the first conductive layer 563 and the second conductive layer 564, the resistance value measured by the resistance meter 578 decreases. For example, the measurement result by the resistance meter 578 is transmitted to the control device 4, and the control device 4 controls the substrate processing system 1 according to the measurement result.

The round crimp terminals 574 and 576, the bolt 572, and the bolt connected to the round crimp terminal 576 are covered by an insulating electrode cover 525. This is to suppress changes in electrical resistance due to the adhesion of foreign matter from outside the chamber 20. The electrode cover 525 and the electrode cover 25 may be integrated into one electrode cover.

In such a maintenance panel 23, the gap 565 functions as a switch, similar to the gap 65, and can detect when treatment liquid has adhered to the maintenance panel 23.

The structure for detecting the processing liquid scattered horizontally from the wafer W may be provided not only on the maintenance panel 23 but also on one or more of the side walls 22 located in the other three directions from the wafer W. For example, the first conductive layer 563 and the second conductive layer 564 may be provided on the inner surface of the shutter 24 of the loading/unloading port. The first conductive layer 563 and the second conductive layer 564 do not need to be provided directly on the inner surface of the side wall 22. Like the straightening plate 60, the first conductive layer 563 and the second conductive layer 564 may be formed on an insulating base material, and this base material may be attached to the inner surface of the side wall 22.

Furthermore, the first conductive layer and the second conductive layer may also be provided at the bottom of the chamber 20 to detect splashing of the processing liquid.

The width of the gap does not need to be constant, but even at its widest point, the width is preferably 20 mm or less, more preferably 10 mm or less, and even more preferably 5 mm or less. The larger the gap width, the more difficult it is to electrically connect the first conductive layer and the second conductive layer when liquid adheres to the gap, and in parts where the distance between the first conductive layer and the second conductive layer exceeds 20 mm, it is difficult to detect the adhesion of liquid early.

Although the preferred embodiments have been described above in detail, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

W: Wafer 9: Liquid 20: Chamber 22: Sidewall 23: Maintenance panel 60, 160, 260, 360, 460: Straightening plate 61: Base material 62: Underside 63, 64, 263, 264, 266, 363, 364, 463, 464, 563, 564: Conductive layer 65, 365, 465, 565: Gap 68: Optical sensor 78, 578: Resistance measuring device 265: Groove

Claims (12)

a substrate holding and rotating unit that holds and rotates the substrate;
an air supply unit that supplies air to the substrate held by the substrate holding and rotating unit;
a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holding and rotating unit;
a straightening member disposed between the air supply unit and the substrate holding/rotating unit, for straightening the air supplied from the air supply unit;
having
The flow straightening member is
a base material having a main surface facing the substrate held by the substrate holding and rotating part;
A first conductive layer provided on the main surface;
a second conductive layer disposed on the major surface and electrically insulated from the first conductive layer;
The substrate processing apparatus includes: The substrate processing apparatus according to claim 1, wherein the processing liquid supply unit supplies the processing liquid vertically downward to the substrate held by the substrate holding and rotating unit. The substrate processing apparatus according to claim 1 or 2, further comprising a first detector that detects electrical continuity between the first conductive layer and the second conductive layer. The substrate processing apparatus according to claim 3, wherein the first detection unit includes a first resistance measuring device that measures the electrical resistance between the first conductive layer and the second conductive layer. The substrate processing apparatus according to any one of claims 1 to 4, wherein the distance between the first conductive layer and the second conductive layer is 20 mm or less. The substrate processing apparatus according to any one of claims 1 to 5, wherein the thickness of the first conductive layer and the second conductive layer is 0.1 μm or more. The substrate processing apparatus according to any one of claims 1 to 6, wherein the first conductive layer and the second conductive layer are arranged in a comb-like shape on the main surface. The substrate processing apparatus according to any one of claims 1 to 6, wherein the first conductive layer and the second conductive layer are arranged in a spiral shape on the main surface. a housing that houses the flow rectifying member,
a third conductive layer provided on an inner surface of a side wall of the housing;
a fourth conductive layer disposed on the inner surface and electrically insulated from the third conductive layer;
The substrate processing apparatus according to claim 1 , further comprising: The substrate processing apparatus according to claim 9, further comprising a second detector that detects electrical continuity between the third conductive layer and the fourth conductive layer. The substrate processing apparatus according to claim 10, wherein the second detection unit includes a second resistance measuring device that measures the electrical resistance between the third conductive layer and the fourth conductive layer. The substrate processing apparatus according to any one of claims 9 to 11, wherein the distance between the third conductive layer and the fourth conductive layer is 20 mm or less.

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