JP7191586B2 - ウエーハの一体化方法 - Google Patents
ウエーハの一体化方法 Download PDFInfo
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- JP7191586B2 JP7191586B2 JP2018153469A JP2018153469A JP7191586B2 JP 7191586 B2 JP7191586 B2 JP 7191586B2 JP 2018153469 A JP2018153469 A JP 2018153469A JP 2018153469 A JP2018153469 A JP 2018153469A JP 7191586 B2 JP7191586 B2 JP 7191586B2
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- 238000000034 method Methods 0.000 title claims description 46
- 230000010354 integration Effects 0.000 title claims description 12
- -1 polypropylene Polymers 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 17
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- 230000001681 protective effect Effects 0.000 claims description 11
- 239000004698 Polyethylene Substances 0.000 claims description 9
- 229920000728 polyester Polymers 0.000 claims description 9
- 229920000573 polyethylene Polymers 0.000 claims description 9
- 239000004743 Polypropylene Substances 0.000 claims description 7
- 229920001155 polypropylene Polymers 0.000 claims description 7
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims 15
- 230000008569 process Effects 0.000 description 30
- 238000010438 heat treatment Methods 0.000 description 23
- 238000007789 sealing Methods 0.000 description 10
- 238000003825 pressing Methods 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 238000007906 compression Methods 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/025—Bonding tips therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
12:デバイス
14:分割予定ライン
20:支持テーブル
32:第一の熱圧着シート
34:第二の熱圧着シート
40:加熱ローラ
50:研削装置
52:チャックテーブル
60:研削手段
62:回転スピンドル
66:研削ホイール
68:研削砥石
70:熱圧着装置
72:支持基台
76:密閉カバー部材
78:押圧部材
Claims (6)
- 表面に複数のデバイスが分割予定ラインによって区画されたウエーハの裏面を加工する加工工程において保護部材として機能する熱圧着シートをウエーハの表面に敷設して一体化するウエーハの一体化方法であって、
ウエーハの形状と同等以上の大きさの熱圧着シートと、該熱圧着シートとウエーハの表面とを対面させ熱を付与して押圧し、該熱圧着シートをウエーハの表面に熱圧着する熱圧着工程を少なくとも含み、
該熱圧着工程においてウエーハに熱圧着される該熱圧着シートは、少なくとも第一の熱圧着シートと第二の熱圧着シートとにより構成され、
該熱圧着工程は、第一の熱圧着工程と第二の熱圧着工程とを含み、
該第一の熱圧着シートは、第一の熱圧着工程によりウエーハの表面に形成された凸部を完全に包み込むことなくウエーハの表面に熱圧着され、該第二の熱圧着シートは、該第一の熱圧着工程の後に実施される第二の熱圧着工程により、一端側の面が該第一の熱圧着シートに流動性をもって密着して熱圧着され、他端側の面が平坦面に形成されるウエーハの一体化方法。 - 該第一の熱圧着シート及び該第二の熱圧着シートは、ポリオレフィン系のシートで構成される請求項1に記載のウエーハの一体化方法。
- 該第一の熱圧着シートはポリエステル系のシートで構成され、該第二の熱圧着シートはポリオレフィン系のシートで構成される請求項1に記載のウエーハの一体化方法。
- 該第一の熱圧着シートはポリプロピレンシートであり、該第二の熱圧着シートはポリエチレンシートである請求項2に記載のウエーハの一体化方法。
- 該第一の熱圧着シートはポリエチレンナフタレートであり、該第二の熱圧着シートはポリエチレンシートである請求項3に記載のウエーハの一体化方法。
- 該第一の熱圧着シート及び該第二の熱圧着シートを選択する際には、該第二の熱圧着シートの溶融温度が、該第一の熱圧着シートの溶融温度よりも低い温度になるように選択される、請求項1乃至3のいずれかに記載のウエーハの一体化方法。
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JP2018153469A JP7191586B2 (ja) | 2018-08-17 | 2018-08-17 | ウエーハの一体化方法 |
US16/539,481 US10916466B2 (en) | 2018-08-17 | 2019-08-13 | Wafer uniting method |
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JP2018153469A JP7191586B2 (ja) | 2018-08-17 | 2018-08-17 | ウエーハの一体化方法 |
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JP2020027916A JP2020027916A (ja) | 2020-02-20 |
JP7191586B2 true JP7191586B2 (ja) | 2022-12-19 |
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US (1) | US10916466B2 (ja) |
JP (1) | JP7191586B2 (ja) |
Families Citing this family (4)
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JP2019220550A (ja) * | 2018-06-19 | 2019-12-26 | 株式会社ディスコ | ウエーハの加工方法 |
JP7461118B2 (ja) * | 2019-08-19 | 2024-04-03 | 株式会社ディスコ | ウエーハの加工方法 |
CN112077431B (zh) * | 2020-09-10 | 2022-08-02 | 无锡海菲焊接设备有限公司 | Vc散热器的铜网焊接工艺及其自动焊接机 |
JP2023019193A (ja) * | 2021-07-28 | 2023-02-09 | 株式会社ディスコ | 被加工物の加工方法 |
Citations (7)
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JP2011054940A (ja) | 2009-08-07 | 2011-03-17 | Nitto Denko Corp | 半導体ウェハ保持保護用粘着シート及び半導体ウェハの裏面研削方法 |
JP2011216513A (ja) | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 表面保護用粘着テープ |
JP2011228474A (ja) | 2010-04-20 | 2011-11-10 | Disco Abrasive Syst Ltd | 半導体装置の製造方法 |
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JP2011054940A (ja) | 2009-08-07 | 2011-03-17 | Nitto Denko Corp | 半導体ウェハ保持保護用粘着シート及び半導体ウェハの裏面研削方法 |
JP2011216513A (ja) | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 表面保護用粘着テープ |
JP2011228474A (ja) | 2010-04-20 | 2011-11-10 | Disco Abrasive Syst Ltd | 半導体装置の製造方法 |
WO2011152045A1 (ja) | 2010-06-02 | 2011-12-08 | 三井化学東セロ株式会社 | 半導体ウェハ表面保護用シート、およびそれを用いた半導体ウェハの保護方法と半導体装置の製造方法 |
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