JP6402813B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device used for, for example, electric railway or wind power generation.

  A semiconductor device such as an IGBT (Insulated Gate Bipolar Transistor) module is used, for example, for power control of a motor. Patent Document 1 discloses a semiconductor device including a semiconductor element such as an IGBT. In this semiconductor device, a main electrode is connected to a metal pattern electrically connected to a semiconductor element.

JP 2012-64609 A

  For example, the metal pattern and the main electrode may be connected using solder. When the semiconductor device is turned on when the main current starts to flow, when the main current constantly flows, and when the main current is turned off, the energy loss of the semiconductor element becomes thermal energy, and the temperature of the semiconductor device increases. On the other hand, when the semiconductor device is not energized for a long time, the temperature of the semiconductor device decreases to the external environment temperature (low temperature). By repeating the high temperature state and the low temperature state, the components in the semiconductor device repeat thermal expansion and thermal contraction. Thereby, there existed a problem which the connection part of a metal pattern and a main electrode deteriorated. When this deterioration proceeds, there is a problem that the main electrode is separated from the metal pattern.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device capable of suppressing deterioration of a connection portion between a metal pattern and a main electrode.

The semiconductor device according to the invention of the present application is opposed to the first side of the base plate, the base plate formed in a square shape in a plan view, the first unit structure formed on the first side of the base plate. A second unit structure formed on the second side, and a high-potential side main electrode and a low-potential side main electrode with an upper end exposed to the outside, the first unit structure and the second unit structure are: An insulating substrate fixed to the base plate ; and an outer peripheral portion formed on the insulating substrate and closest to the first side of the first unit structure or the second side of the second unit structure And a semiconductor element electrically connected to the metal pattern, and each lower end of the high potential side main electrode and the low potential side main electrode It is connected to the outer peripheral part which is a part nearest to the outer edge of this base plate among metal patterns.

Another semiconductor device according to the invention of the present application is formed in a quadrangular shape in plan view, and includes a base plate having a first side and a second side facing the first side, and the first side of the base plate A first unit structure formed on the second plate, a second unit structure formed on the second side of the base plate, and a high-potential side main electrode and a low-potential side main electrode with an upper end exposed to the outside. The first unit structure and the second unit structure are formed on the insulating substrate, fixed to the base plate , and are formed on the first side of the first unit structure. A metal pattern extending to the outer periphery that is closest to the second side of the second unit structure , and a semiconductor element that is electrically connected to the metal pattern. electrode and the low-potential-side main electrode, each lower end connected to the metal pattern, the high-potential-side main electrode and the low potential side The respective lower ends of the electrodes, the first window side than the advanced location by 1/4 of the distance from the first side toward the second side from the first side to the second side, or, It is characterized in that it is in a portion on the second side with respect to a place advanced by ¼ of the distance from the second side to the first side from the second side to the first side.

  Other features of the present invention will become apparent below.

  According to this invention, it is possible to suppress the deterioration of the connection portion between the metal pattern and the main electrode.

It is a top view of the internal structure of the semiconductor device which concerns on Embodiment 1 of this invention. It is a perspective view, such as a main electrode. It is a top view, such as a main electrode. 1 is a side view of a semiconductor device according to a first embodiment of the present invention. It is a top view of the internal structure of the semiconductor device of a comparative example. It is a perspective view of the main electrode etc. of a comparative example. It is a top view of the main electrode etc. of a comparative example. It is a top view of the internal structure of the semiconductor device which concerns on Embodiment 2 of this invention. It is a perspective view of the main electrode etc. which concern on Embodiment 2 of this invention. It is a top view of the internal structure of the semiconductor device which concerns on Embodiment 3 of this invention. It is a perspective view of the 2nd main electrode etc. which concern on Embodiment 3 of this invention. It is a top view of the internal structure of the semiconductor device which concerns on Embodiment 4 of this invention. It is a perspective view of the 2nd main electrode etc. which concern on Embodiment 4 of this invention.

  A semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

Embodiment 1 FIG.
FIG. 1 is a plan view of the internal structure of the semiconductor device according to the first embodiment of the present invention. This semiconductor device includes a base plate 10. For example, the base plate 10 is formed in a quadrangular shape in plan view. A plurality of first through holes 12 are formed along the first side 10 a of the base plate 10 in the base plate 10. A plurality of second through holes 14 are formed along the second side 10 b facing the first side 10 a of the base plate 10.

  A plurality of unit structures are formed on the base plate 10. The plurality of unit structures includes three first unit structures 16, 60 and 70 and three second unit structures 18, 80 and 90. The three first unit structures 16, 60 and 70 are formed on the first side 10 a side of the base plate 10. The three second unit structures 18, 80, 90 are formed on the second side 10 b side of the base plate 10. The three first unit structures 16, 60, 70 and the three second unit structures 18, 80, 90 are lines having an imaginary line extending in parallel between the first side 10a and the second side 10b as an axis of symmetry. It is symmetrical.

  First, the first unit structure will be described. Since the three first unit structures 16, 60 and 70 have the same configuration, the first unit structure 16 will be described here. The first unit structure 16 has an insulating substrate 20 fixed to the base plate 10. A first metal pattern 22 and a second metal pattern 24 insulated from the first metal pattern 22 are formed on the insulating substrate 20. The first metal pattern 22 and the second metal pattern 24 are made of, for example, copper or aluminum. The length of the second metal pattern 24 in the direction in which the main current flows is larger than a value obtained by doubling the width of the second metal pattern 24.

  The first unit structure 16 includes four IGBTs 26 and four diodes 28. The IGBT 26 has an emitter on the front surface and a collector on the back surface. The diode 28 has an anode on the front surface and a cathode on the back surface. The collector of the IGBT 26 and the cathode of the diode 28 are connected to the first metal pattern 22. This connection is for example by solder. For example, the emitter of the IGBT 26 and the anode of the diode 28 are electrically connected to the second metal pattern 24 via a wire 30 formed of aluminum, for example.

  A first lower end 32 of the first main electrode is connected to the first metal pattern 22. A first lower end 34 of the second main electrode is connected to the second metal pattern 24. For convenience of explanation, in FIG. 1, portions other than the lower ends of the first main electrode and the second main electrode are omitted.

  Next, the second unit structure will be described. Since the three second unit structures 18, 80, and 90 have the same configuration, the second unit structure 18 will be described here. The second unit structure 18 has an insulating substrate 40 fixed to the base plate 10. A first metal pattern 42 and a second metal pattern 44 insulated from the first metal pattern 42 are formed on the insulating substrate 40. The first metal pattern 42 and the second metal pattern 44 are made of, for example, copper or aluminum.

  The second unit structure 18 includes four IGBTs 46 and four diodes 48. The IGBT 46 and the diode 48 are the same as the IGBT 26 and the diode 28, respectively. The first metal pattern 42 is connected to the collector of the IGBT 46 and the cathode of the diode 48. This connection is for example by solder. For example, the emitter of the IGBT 46 and the anode of the diode 48 are electrically connected to the second metal pattern 44 via a wire 50 made of, for example, aluminum.

  A second lower end 52 of the first main electrode is connected to the first metal pattern 42. A second lower end portion 54 of the second main electrode is connected to the second metal pattern 44. The second unit structure 18 has the above-described configuration. In FIG. 1 and subsequent drawings, wirings for supplying voltage to the gates of the IGBTs 26 and 46 included in the actual semiconductor device, an emitter sense auxiliary electrode, a gate auxiliary electrode, a collector sense auxiliary electrode, and the like are omitted.

  As is clear from FIG. 1, the first unit structure 60 includes first lower end portions 62 and 64. The first unit structure 70 includes first lower end portions 72 and 74. The second unit structure 80 includes second lower end portions 82 and 84. The second unit structure 90 includes second lower end portions 92 and 94. The first lower end portions 32, 34, 62, 64, 72, and 74 are arranged along the plurality of first through holes 12. The second lower end portions 52, 54, 82, 84, 92, 94 are arranged along the plurality of second through holes 14.

  The first lower end portions 32, 34, 62, 64, 72, and 74 are from a place advanced by ¼ of the distance from the first side 10a to the second side 10b from the first side 10a to the second side 10b. Is also located on the first side 10a side. This position is referred to as a first side position. On the other hand, the second lower end portions 52, 54, 82, 84, 92, and 94 have advanced by ¼ of the distance from the second side 10b to the first side 10a from the second side 10b to the first side 10a. It is located closer to the second side 10b than the place. This position is referred to as a second side position. Therefore, all the lower end portions (refer to any one of the first lower end portions 32, 34, 62, 64, 72, 74 and the second lower end portions 52, 54, 82, 84, 92, 94) It is in the first side position or the second side position.

  FIG. 2 is a perspective view of the main electrode and the like. FIG. 2 shows the first main electrode 100 and the second main electrode 110. The upper end portion 102 of the first main electrode 100 is a portion exposed to the outside. The first main electrode 100 includes a first lower end 32 and a second lower end 52. The first lower end 32 and the first metal pattern 22, and the second lower end 52 and the first metal pattern 42 are connected by, for example, solder. The first main electrode 100 functions as a collector main electrode.

  The upper end 112 of the second main electrode 110 is a portion exposed to the outside. The second main electrode 110 includes a first lower end portion 34 and a second lower end portion 54. The first lower end portion 34 and the second metal pattern 24, and the second lower end portion 54 and the second metal pattern 44 are connected by, for example, solder. The second main electrode 110 functions as an emitter main electrode.

  As described above, the first unit structure 16 and the second unit structure 18 share one first main electrode 100. The first unit structure 16 and the second unit structure 18 share one second main electrode 110. Similarly, the first unit structure 60 and the second unit structure 80 share one first main electrode and one second main electrode. The first unit structure 70 and the second unit structure 90 share one first main electrode and one second main electrode.

  FIG. 3 is a plan view of the main electrode and the like. The semiconductor device according to the first embodiment of the present invention includes first main electrodes 100, 120, and 140 and second main electrodes 110, 130, and 150 as main electrodes. All lower ends are connected to an outer peripheral portion (hereinafter sometimes simply referred to as an outer peripheral portion) which is a portion closest to the outer edge of the base plate 10 among metal patterns (referring to the first metal pattern or the second metal pattern). Yes.

  FIG. 4 is a side view of the semiconductor device according to the first embodiment of the present invention. A screw 160 passes through the plurality of first through holes 12 and the plurality of second through holes 14. The heat sink 162 is in thermal contact (connection) with the back surface of the base plate 10 by the screw 160. Grease may be applied between the base plate 10 and the heat sink 162. The plurality of unit structures are covered with a case 164 on the base plate 10. Upper end portions 102 and 112 of the main electrode are exposed from the upper surface of the case 164.

  Here, prior to the description of the significance of the semiconductor device according to the first embodiment of the present invention, a comparative example will be described. FIG. 5 is a plan view of the internal structure of the semiconductor device of the comparative example. Three upper unit structures 200, 220, and 230 are formed on the first side 10 a side of the base plate 10. Three lower unit structures 240, 260, and 270 are formed on the second side 10 b side of the base plate 10. Middle unit structures 280, 290, and 300 are formed between the upper unit structures 200, 220, and 230 and the lower unit structures 240, 260, and 270 on the base plate 10.

  Since the three upper unit structures 200, 220, and 230 have the same configuration, the upper unit structure 200 will be described here. The upper unit structure 200 includes an insulating substrate 202. A metal pattern 204 is formed on the insulating substrate 202. The collector of the IGBT 206 and the cathode of the diode 208 are connected to the metal pattern 204 by, for example, solder. The first lower end 210 of the first main electrode is connected to the metal pattern 204 by, for example, solder.

  Since the three lower unit structures 240, 260, and 270 have the same configuration, the lower unit structure 240 will be described here. The lower unit structure 240 includes an insulating substrate 242. A metal pattern 244 is formed on the insulating substrate 242. The collector of the IGBT 246 and the cathode of the diode 248 are connected to the metal pattern 244 by, for example, solder. The second lower end 250 of the first main electrode is connected to the metal pattern 244 by, for example, solder.

  Since the three middle unit structures 280, 290, and 300 have the same configuration, the middle unit structure 280 will be described here. The middle unit structure 280 includes an insulating substrate 282. A metal pattern 284 is formed on the insulating substrate 282. The emitters of the IGBTs 206 and 246 and the anodes of the diodes 208 and 248 are electrically connected to the metal pattern 284 through wires. The lower end 286 of the second main electrode is connected to the metal pattern 284 by, for example, solder.

  As is clear from FIG. 5, the first lower end portion 210 is not connected to the outer peripheral portion that is the portion of the metal pattern 204 that is closest to the outer edge of the base plate 10. The second lower end portion 250 is not connected to the outer peripheral portion that is the portion of the metal pattern 244 that is closest to the outer edge of the base plate 10. Since the lower end 286 is formed in the middle of the first side 10a and the second side 10b, the lower end 286 is not located at the first side side position or the second side side position.

  FIG. 6 is a perspective view of a main electrode and the like of a comparative example. FIG. 6 shows a first main electrode 310 and a second main electrode 320. Focusing on the length in the direction from the first side 10a to the second side 10b (referred to as the lateral length), the first main electrode 310 is shorter than the first main electrode 100 described above. The lateral length of the second main electrode 320 is shorter than the lateral length of the second main electrode 110 described above. FIG. 7 is a plan view of the main electrode and the like of the comparative example. The semiconductor device of the comparative example has the above-described configuration.

  By the way, the heat radiation amount at a position near the outer edge of the base plate 10 is larger than the heat radiation amount at the center position of the base plate 10. According to the semiconductor device according to the first embodiment of the present invention, the lower end portions of the main electrode are all connected to the outer peripheral portion that is the portion closest to the outer edge of the base plate 10 in the metal pattern. Therefore, it is possible to increase the heat radiation amount at the connection portion (hereinafter simply referred to as the connection portion) between the metal pattern and the main electrode, and to suppress the deterioration of the connection portion.

  In the case of the comparative example, since there is a middle unit structure between the upper unit structure and the lower unit structure, the connection part of the middle unit structure may not be disposed near the outer edge of the base plate. However, in the semiconductor device according to the first embodiment of the present invention, the second metal pattern 24 is provided in the first unit structure 16 and the second metal pattern 44 is provided in the second unit structure 18. The middle unit structure is unnecessary. Therefore, all the connecting portions can be arranged near the outer edge of the base plate.

  Since the base plate 10 and the heat sink 162 are connected by screws 160 inserted into the plurality of first through holes 12 and the plurality of second through holes 14, the plurality of first through holes 12 or the plurality of first through holes 12 of the base plate 10 are connected. The portion along the two through holes 14 is strongly pressed against the heat sink 162. Therefore, in the part along the plurality of first through holes 12 or the plurality of second through holes 14 in the base plate 10, the heat radiation amount is larger than the central portion of the base plate 10.

  In the semiconductor device according to Embodiment 1 of the present invention, all the lower end portions (connection portions) of the main electrode are arranged along the plurality of first through holes 12 or the plurality of second through holes 14. Therefore, the amount of heat released by the heat sink 162 in the connecting portion can be increased to suppress the deterioration of the connecting portion. In order to sufficiently increase the amount of heat released by the heat sink 162 in the connection portion, it is preferable that all the connection portions (all the lower end portions) are in the first side position or the second side position.

  Thus, the maximum temperature of the connection portion can be lowered by arranging the connection portions along the plurality of first through holes 12 or the plurality of second through holes 14 while bringing the connection portions close to the outer edge of the base plate 10. it can. Therefore, the thermal cycle life of the semiconductor device (the period from the start of use of the semiconductor device until the main electrode is separated from the metal pattern) can be extended.

  All the main electrodes according to Embodiment 1 of the present invention include a first lower end portion connected to the outer peripheral portion on the first side 10a side of the first unit structure, and an outer periphery on the second side 10b side of the second unit structure. A second lower end connected to the portion. Therefore, the lateral lengths of all the main electrodes according to Embodiment 1 of the present invention are longer than the lateral lengths of the comparative main electrodes. The main electrode having a long lateral length exhibits a spring effect when a component of the semiconductor device is thermally expanded or contracted, and can reduce the stress of the connection portion. Therefore, it is possible to suppress the deterioration of the connection portion.

  In the first embodiment of the present invention, the plurality of unit structures include three first unit structures 16, 60, 70 and three second unit structures 18, 80, 90, but the present invention is not limited to this. As long as a plurality of unit structures in which the lower end portion of the main electrode is connected to the outer peripheral portion are provided, the internal structure of the unit structure and the number of unit structures are not limited.

  By the way, in order to unify the reliability of one connection part and another connection part, the lower end part of the main electrode is connected to the outer peripheral part in all unit structures, and all the connection parts are connected from the outer edge of the base plate 10. It is preferable that the distance to the part is equal.

  As described above, an important feature of the present invention is that a plurality of unit structures in which the lower end portion of the main electrode is connected to the outer peripheral portion are provided. When the heat radiation amount of the connection portion can be sufficiently increased due to this feature, the connection portions are arranged along the plurality of first through holes 12 or the plurality of second through holes 14, and the connection portions are arranged at the first side position or the second side. It is not essential to dispose at the side position and to increase the lateral length of the main electrode.

  The shape of the base plate 10 is not particularly limited. For example, four unit structures may be formed on a substantially square base plate. When the through holes are formed at the four corners of the square base plate, the heat dissipation effect by the heat sink is enhanced at a location along the outer edge of the base plate. Therefore, the connecting portions may be arranged along the outer edge of the base plate. A cooler other than the heat sink 162 may be used. For example, a water-cooled cooler may be attached to the back surface of the base plate 10.

  Semiconductor elements connected to the metal pattern are not limited to IGBTs and diodes. If the semiconductor element passes a main current between the first part and the second part, the first part is electrically connected to the first metal pattern, and the second part is electrically connected to the second metal pattern. The specific configuration is not particularly limited. An example of the first part is a collector or a cathode. An example of the second part is an emitter or an anode. An example of the semiconductor element is a switching element or a diode. As the switching element, there is, for example, a MOSFET, an SJMOS, or a JFET other than the IGBT.

  The semiconductor element may be formed of silicon or a wide band gap semiconductor having a band gap larger than that of silicon. The wide band gap semiconductor is, for example, silicon carbide, a gallium nitride-based material, or diamond. A semiconductor element formed of a wide band gap semiconductor has a high withstand voltage and a high allowable current density, and thus a large current flows in many cases. For this reason, the temperature difference between the high temperature and the low temperature of the semiconductor element becomes large, and the connection portion is likely to deteriorate. In this case, it is particularly important to employ the configuration according to the first embodiment of the present invention to improve the heat dissipation of the connection portion.

  Note that the semiconductor device can be miniaturized by employing a semiconductor element formed of a wide band gap semiconductor. Each of the above modifications can also be applied to semiconductor devices according to the following embodiments.

Embodiment 2. FIG.
Since the semiconductor device according to the second embodiment of the present invention has many points of coincidence with the semiconductor device according to the first embodiment, the differences from the semiconductor device according to the first embodiment will be mainly described. FIG. 8 is a plan view of the internal structure of the semiconductor device according to the second embodiment of the present invention.

  A plurality of unit structures are formed on the base plate 10. The plurality of unit structures includes three first unit structures 400, 420, and 430 and three second unit structures 440, 460, and 470. The three first unit structures 400, 420, and 430 are formed on the first side 10 a side of the base plate 10. The three second unit structures 440, 460, and 470 are formed on the second side 10b side of the base plate 10. The three first unit structures 400, 420, and 430 and the three second unit structures 440, 460, and 470 are lines having an imaginary line extending in parallel between the first side 10a and the second side 10b as an axis of symmetry. It is symmetrical.

  First, the first unit structure will be described. Since the three first unit structures 400, 420, and 430 have the same configuration, the first unit structure 400 will be described here. A first metal pattern 402, a second metal pattern 404, and a third metal pattern 406 that are insulated from each other are formed on the insulating substrate 20. The length of the second metal pattern 404 in the direction in which the main current flows is larger than a value obtained by doubling the width of the second metal pattern 404.

  The collectors of the three IGBTs 408 and the cathodes of the three diodes 410 are connected to the first metal pattern 402. Similarly, the collectors of three IGBTs and the cathodes of three diodes are connected to the third metal pattern 406. For example, the emitter of the IGBT and the anode of the diode are electrically connected to the second metal pattern 404 via a wire formed of aluminum, for example.

  The first main electrode has first lower end portions 412a and 412b. The first lower end portion 412 a is connected to the first metal pattern 402. The first lower end portion 412 b is connected to the third metal pattern 406. A first lower end 414 of the second main electrode is connected to the second metal pattern 404.

  Next, the second unit structure will be described. Since the three second unit structures 440, 460, and 470 have the same configuration, the second unit structure 440 will be described here. A first metal pattern 442, a second metal pattern 444, and a third metal pattern 446 that are insulated from each other are formed on the insulating substrate 40.

  The collectors of the three IGBTs 448 and the cathodes of the three diodes 450 are connected to the first metal pattern 442. Similarly, the collectors of three IGBTs and the cathodes of three diodes are connected to the third metal pattern 446. The emitter of the IGBT and the anode of the diode are electrically connected to the second metal pattern 444 through a wire.

  The first main electrode has second lower end portions 452a and 452b. The first lower end 452 a is connected to the first metal pattern 442. The first lower end 452 b is connected to the third metal pattern 446. A second lower end 454 of the second main electrode is connected to the second metal pattern 444.

  FIG. 9 is a perspective view of the main electrode and the like according to Embodiment 2 of the present invention. A first main electrode 500 and a second main electrode 510 are shown. A feature of the semiconductor device according to the second embodiment of the present invention is that the first main electrode 500 includes four lower end portions (first lower end portions 412a and 412b and second lower end portions 452a and 452b). . According to this feature, the number of connecting portions of the first main electrode 500 is four, so that the number of connecting portions of the first main electrode 100 is two as in the semiconductor device according to the first embodiment. It becomes possible to reduce the current density of the individual connection portions. Therefore, it is possible to suppress the deterioration of the connection portion.

Embodiment 3 FIG.
Since the semiconductor device according to the third embodiment of the present invention has many points of coincidence with those of the semiconductor device of the second embodiment, differences from the semiconductor device of the second embodiment will be mainly described. FIG. 10 is a plan view of the internal structure of the semiconductor device according to the third embodiment of the present invention.

  The second main electrode has first lower end portions 414a and 414b. The first lower end portions 414 a and 414 b are connected to the second metal pattern 404. The second main electrode has second lower end portions 454a and 454b. The second lower end portions 454 a and 454 b are connected to the second metal pattern 444. FIG. 11 is a perspective view of the second main electrode and the like according to Embodiment 3 of the present invention. A second main electrode 600 is shown. In FIG. 11, the first main electrode is omitted.

  The second main electrode 600 includes four lower end portions (first lower end portions 414a and 414b and second lower end portions 454a and 454b). According to this feature, the number of connecting portions of the second main electrode 600 is four, so that the number of connecting portions of the second main electrode 110 is two as in the semiconductor device according to the first embodiment. It becomes possible to reduce the current density of the individual connection portions. Therefore, it is possible to suppress the deterioration of the connection portion.

Embodiment 4 FIG.
Since the semiconductor device according to the fourth embodiment of the present invention has many points of coincidence with the semiconductor device of the third embodiment, the description will focus on differences from the semiconductor device of the third embodiment. FIG. 12 is a plan view of the internal structure of the semiconductor device according to the fourth embodiment of the present invention.

  The first lower end 414a of the second main electrode is located farther from the outer edge of the base plate 10 than the first lower end 414b. The second lower end 454a of the second main electrode is located farther from the outer edge of the base plate 10 than the second lower end 454b. FIG. 13 is a perspective view of the second main electrode 700 and the like according to Embodiment 4 of the present invention. The upper end 702 of the second main electrode 700 is a portion exposed to the outside.

  Due to the layout of the connecting portion, a certain connecting portion may be farther from the outer edge of the base plate than the other connecting portions. In the semiconductor device of the fourth embodiment, the first lower end 414a and the second lower end 454a are farther from the outer edge of the base plate 10 than the other lower ends. However, all the lower ends including the first lower end 414a and the second lower end 454a are in the first side position or the second side position. Therefore, it is possible to suppress the deterioration of all connection portions.

  By the way, the semiconductor device according to the embodiment 2-4 of the present invention is characterized in that the main electrode has four lower end portions. More specifically, the main electrode has two first lower end portions and two second lower end portions. Thereby, the current density of each connection part can be reduced. Note that the number of the first lower end and the second lower end is not limited to two, and the main electrode has two or more first lower ends and two or more second lower ends, so that individual connections can be made. The current density of the part can be reduced.

  The effects of the present invention may be enhanced by appropriately combining the features of the semiconductor devices according to the above embodiments.

  10 base plate, 10a first side, 10b second side, 12 plural first through holes, 14 plural second through holes, 16, 60, 70 first unit structure, 18, 80, 90 second unit structure, 20, 40 Insulating substrate, 22, 42 First metal pattern, 24, 44 Second metal pattern, 26, 46 IGBT, 28, 48 Diode, 30, 50 Wire, 32, 34, 62, 64, 72, 74 First Lower end, 52, 54, 82, 84, 92, 94 second lower end, 100 first main electrode, 110 second main electrode, 102, 112 upper end, 160 screw, 162 heat sink, 164 case, 400, 420, 430 First unit structure, 440, 460, 470 Second unit structure, 412a, 412b, 414a, 414b First lower end, 452a, 452b, 454a, 454b Second End, 500 a first main electrode, 510,600,700 second main electrode

Claims (14)

A base plate formed in a square shape in plan view;
A first unit structure formed on the first side of the base plate;
A second unit structure formed on the second side facing the first side of the base plate;
A high-potential side main electrode and a low-potential side main electrode with the upper end exposed to the outside,
The first unit structure and the second unit structure are:
An insulating substrate fixed to the base plate;
A metal pattern formed on the insulating substrate and extending to an outer peripheral portion closest to the first side of the first unit structure or an outer peripheral portion closest to the second side of the second unit structure. When,
A semiconductor element electrically connected to the metal pattern,
The high-potential side main electrode and the low-potential side main electrode each have a lower end connected to an outer peripheral portion that is a portion closest to the outer edge of the base plate in the metal pattern.   The high potential side main electrode or the low potential side main electrode includes a first lower end portion connected to the outer peripheral portion on the first side of the first unit structure, and the second side of the second unit structure. The semiconductor device according to claim 1, further comprising: a second lower end portion connected to the outer peripheral portion on the side. A plurality of first through holes along the first side of the base plate and a plurality of second through holes along the second side opposite to the first side are formed in the base plate,
2. The semiconductor device according to claim 1, wherein all of the lower end portions are arranged along the plurality of first through holes or the plurality of second through holes. Screws passing through the plurality of first through holes and the plurality of second through holes;
The semiconductor device according to claim 3, further comprising a cooler connected to the back surface of the base plate by the screw.   All the lower end portions are located on the first side side from the location where the distance from the first side to the second side is 1/4 of the distance from the first side to the second side, or 4. The device according to claim 3, wherein the second side is located on a portion closer to the second side than a place advanced by ¼ of a distance from the second side to the first side from the second side toward the first side. A semiconductor device according to 1. The metal pattern includes a first metal pattern and a second metal pattern insulated from the first metal pattern,
The semiconductor element passes a main current between a first portion and a second portion, the first portion is electrically connected to the first metal pattern, and the second portion is electrically connected to the second metal pattern. Connected to
The high potential side main electrode or the low potential side main electrode includes a first main electrode connected to the first metal pattern, and a second main electrode connected to the second metal pattern. The semiconductor device according to claim 1.   The semiconductor according to claim 2, wherein the high-potential side main electrode or the low-potential side main electrode has two or more first lower end portions and two or more second lower end portions. apparatus.   The semiconductor device according to claim 1, wherein the semiconductor element is a switching element or a diode.   The semiconductor device according to claim 8, wherein the semiconductor element is formed of a wide band gap semiconductor.   The semiconductor device according to claim 9, wherein the wide band gap semiconductor is silicon carbide, a gallium nitride-based material, or diamond. A base plate that is formed in a quadrangle in a plan view and has a first side and a second side opposite to the first side;
A first unit structure formed on the first side of the base plate;
A second unit structure formed on the second side of the base plate;
A high-potential side main electrode and a low-potential side main electrode with the upper end exposed to the outside,
The first unit structure and the second unit structure are:
An insulating substrate fixed to the base plate;
A metal pattern formed on the insulating substrate and extending to an outer peripheral portion closest to the first side of the first unit structure or an outer peripheral portion closest to the second side of the second unit structure. When,
A semiconductor element electrically connected to the metal pattern,
Each of the high potential side main electrode and the low potential side main electrode is connected to the metal pattern at each lower end,
Each lower end of the high-potential-side main electrode and the low-potential-side main electrode, only 1/4 of the distance towards from the first side to the second side from the first side to the second side progressed The second side from the first side or the second side from the second side toward the first side by a quarter of the distance from the second side to the first side. A semiconductor device characterized by being in a side portion. A through hole is formed on the first side or the second side of the base plate,
A screw passing through the through hole;
The semiconductor device according to claim 11, further comprising: a cooler connected to the back surface of the base plate by the screw.   The semiconductor device according to claim 6, wherein a length of the second metal pattern in a direction in which a main current flows is larger than a value obtained by doubling the width of the second metal pattern. The metal pattern includes a first metal pattern, a second metal pattern, and a third metal pattern that are insulated from each other.
The high potential side main electrode or the low potential side main electrode includes a first main electrode connected to the first metal pattern and the third metal pattern, and a second main electrode connected to the second metal pattern, The semiconductor device according to claim 1, further comprising:

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