JP6203383B2 - 封止フィルム及びそれを用いた有機電子デバイスの封止方法 - Google Patents
封止フィルム及びそれを用いた有機電子デバイスの封止方法 Download PDFInfo
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- JP6203383B2 JP6203383B2 JP2016515267A JP2016515267A JP6203383B2 JP 6203383 B2 JP6203383 B2 JP 6203383B2 JP 2016515267 A JP2016515267 A JP 2016515267A JP 2016515267 A JP2016515267 A JP 2016515267A JP 6203383 B2 JP6203383 B2 JP 6203383B2
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- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
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- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
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- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical compound C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
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- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
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- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
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- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
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- 239000002250 absorbent Substances 0.000 description 1
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- 238000010521 absorption reaction Methods 0.000 description 1
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- 239000013543 active substance Substances 0.000 description 1
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- 239000000853 adhesive Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
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- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- SGUXGJPBTNFBAD-UHFFFAOYSA-L barium iodide Chemical compound [I-].[I-].[Ba+2] SGUXGJPBTNFBAD-UHFFFAOYSA-L 0.000 description 1
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- 239000011324 bead Substances 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
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- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- QDVNNDYBCWZVTI-UHFFFAOYSA-N bis[4-(ethylamino)phenyl]methanone Chemical compound C1=CC(NCC)=CC=C1C(=O)C1=CC=C(NCC)C=C1 QDVNNDYBCWZVTI-UHFFFAOYSA-N 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
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- 239000000292 calcium oxide Substances 0.000 description 1
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- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 239000013039 cover film Substances 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
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- 125000005520 diaryliodonium group Chemical group 0.000 description 1
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- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
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- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
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- 238000007756 gravure coating Methods 0.000 description 1
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- 235000019382 gum benzoic Nutrition 0.000 description 1
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- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
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- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
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- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
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- 238000002156 mixing Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920006264 polyurethane film Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 229920002397 thermoplastic olefin Polymers 0.000 description 1
- HDUMBHAAKGUHAR-UHFFFAOYSA-J titanium(4+);disulfate Chemical compound [Ti+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O HDUMBHAAKGUHAR-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- 125000005106 triarylsilyl group Chemical group 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
(1)亀裂防止層溶液製造
常温で反応器にシラン変性エポキシ樹脂(KSR−177、国都化学)100g及びブタジエンラバー変性エポキシ樹脂(KR−450、国都化学)100g、フェノキシ樹脂(YP−50、東都化成)150gを投入し、メチルエチルケトンで希釈した。前記均質化された溶液に硬化剤のイミダゾール(四国化成)4gを投入した後、1時間高速撹拌して亀裂防止層溶液を製造した。
水分吸着剤として焼成ドロマイト(calcined dolomite)100g及び溶剤としてMEKを固形分50重量%の濃度で投入して水分吸着剤溶液を製造した。常温で反応器にシラン変性エポキシ樹脂(KSR−177、国都化学)200g及びフェノキシ樹脂(YP−50、東都化成)150gを投入し、メチルエチルケトンで希釈した。前記均質化された溶液に硬化剤のイミダゾール(四国化成)4gを投入した後、1時間高速撹拌して水分防止層溶液を製造した。前記溶液にあらかじめ準備した水分吸着剤溶液を焼成ドロマイトの含量が水分防止層の封止樹脂100重量部対に対し50重量部になるように投入し、混合させて水分防止層溶液を製造した。
前記で準備した水分防止層の溶液を離型PETの離型面に塗布し、110℃で10分間乾燥して、厚さが40μmの水分防止層を形成した。
前記で準備した亀裂防止層の溶液を離型PETの離型面に塗布し、130℃で3分間乾燥して、厚さが15μmの亀裂防止層を形成した。
前記水分防止層及び亀裂防止層を合板して多層のフィルムを製造した。
常温で反応器にシラン変性エポキシ樹脂(KSR−177、国都化学)100g及びアクリルラバー変性エポキシ樹脂(KR−692、国都化学)100g、フェノキシ樹脂(YP−50、東都化成)150gを投入し、メチルエチルケトンで希釈した。前記均質化された溶液に硬化剤のイミダゾール(四国化成)4gを投入した後、1時間高速撹拌して亀裂防止層溶液を製造した以外は、実施例1と同一方法で封止フィルムを製造した。
常温で反応器に亀裂防止層の封止樹脂として、ポリイソブテン樹脂(重量平均分子量45万)50g、及び接着付与剤として水素化したジシクロペンタジエン系樹脂(軟化点125℃)50gを投入した後、DCPD系エポキシ樹脂10g、イミダゾール(四国化成)1gをトルエンで固形分が30重量%程度になるように希釈した以外は、実施例1と同一方法で封止フィルムを製造した。
常温で反応器に亀裂防止層の封止樹脂としてポリイソブテン樹脂(重量平均分子量45万)50g、及び接着付与剤として水素化したジシクロペンタジエン系樹脂(軟化点125℃)50gを投入した後、多官能性アクリルモノマー(TMPTA)20g、光開始剤1gをトルエンで固形分が25重量%程度になるように希釈した以外は、実施例1と同一方法で封止フィルムを製造した。
常温で反応器に亀裂防止層の封止樹脂としてポリイソブテン樹脂(重量平均分子量45万)50g、及び接着付与剤として水素化したジシクロペンタジエン系樹脂(軟化点125℃)50gを投入した後、多官能性アクリルモノマー(TMPTA)10g、光開始剤1gをトルエンで固形分が25重量%程度になるように希釈した以外は、実施例1と同一方法で封止フィルムを製造した。
常温で反応器にシラン変性エポキシ樹脂(KSR−177、国都化学)200g及びフェノキシ樹脂(YP−50、東都化成)150gを投入し、メチルエチルケトンで希釈した。前記均質化した溶液に硬化剤のイミダゾール(四国化成)4gを投入した後、1時間高速撹拌して亀裂防止層溶液を製造した以外は、実施例1と同一方法で封止フィルムを製造した。
常温で反応器にシラン変性エポキシ樹脂(KSR−177、国都化学)180g及びブタジエンラバー変性エポキシ樹脂(KR−450、国都化学)50g、フェノキシ樹脂(YP−50、東都化成)150gを投入し、メチルエチルケトンで希釈した。前記均質化した溶液に硬化剤のイミダゾール(四国化成)4gを投入した後、1時間高速撹拌して亀裂防止層溶液を製造した以外は、実施例1と同一方法で封止フィルムを製造した。
常温で反応器に亀裂防止層の封止樹脂としてポリイソブテン樹脂(重量平均分子量45万)50g、及び接着付与剤として水素化したジシクロペンタジエン系樹脂(軟化点125℃)60gを投入した後、トルエンで固形分が30重量%程度になるように希釈した以外は、実施例1と同一方法で封止フィルムを製造した。
実施例または比較例で製造した亀裂防止層または水分防止層をラミーネーションして厚さが40μmのコーティング膜を製造した。製造したコーティング膜を製造時のコーティング方向を長さ方向として、50mm×10mm(長さ×幅)の大きさで裁断して試験片を製造した後、前記試験片を長さ方向に25mmだけ残るように両端をテーピングした。続いて、テーピング部分を把持し25℃で18mm/minの速度で引っ張って引張弾性率を測定した。
実施例及び比較例で製造したフィルムをカバー基板にラミーネーションした後、ガラス基板との間にラミネートし、70℃条件で加圧加熱圧着して、試験片を製造した。その後、試験片を85℃及び85%相対湿度の恒温恒湿チャンバで約300時間維持しながら、接着破壊が発生する場合を「×」、発生しない場合を「O」で表示した。
2.5cm×5cmのPETフィルムの一端に2.5cm×2.5cmになるように、実施例及び比較例の封止層を付着した後、同一大きさの他のPETの一端に付着した後、85℃チャンバ内で一端を固定した後に、他端に1kgの重りをつけて放置した。24時間観察して封止層がずれるか、または重りが落下したら「×」と表示した。
12 封止層
12a 亀裂防止層
12b 水分防止層
12c 合着層
13 水分吸着剤
21 基板
24 カバー基板
25 有機電子デバイス
Claims (21)
- 有機電子デバイスを封止する封止フィルムであって、
前記封止フィルムは、常温で0.001〜500MPaの引張弾性率を有する亀裂防止層と、常温で500〜1000MPaの引張弾性率を有する水分防止層と、を含む封止層を含み、
前記亀裂防止層が、有機電子デバイス封止時に有機電子デバイスと接触するように形成され、
前記水分防止層は水分吸着剤を含み、
前記亀裂防止層の引張弾性率は前記水分防止層の引張弾性率より低いことを特徴とする、封止フィルム。 - 亀裂防止層及び水分防止層は、封止樹脂を含むことを特徴とする、請求項1に記載の封止フィルム。
- 亀裂防止層は、ガラス転移温度が0℃以下の封止樹脂を含むことを特徴とする、請求項1に記載の封止フィルム。
- 水分防止層は、ガラス転移温度が85℃以上の封止樹脂を含むことを特徴とする、請求項1に記載の封止フィルム。
- 封止樹脂は、スチレン系樹脂、ポリオレフィン系樹脂、熱可塑性エラストマー、ポリオキシアルキレン系樹脂、ポリエステル系樹脂、ポリ塩化ビニル系樹脂、ポリカーボネート系樹脂、ポリフェニレンサルファイド系樹脂、炭化水素の混合物、ポリアミド系樹脂、アクリレート系樹脂、エポキシ系樹脂、シリコン系樹脂、フッ素系樹脂またはこれらの混合物であることを特徴とする、請求項3に記載の封止フィルム。
- 封止樹脂は、炭素−炭素二重結合を含むオレフィン系化合物の共重合体であることを特徴とする、請求項3に記載の封止フィルム。
- 封止樹脂は、硬化性樹脂を含むことを特徴とする、請求項4に記載の封止フィルム。
- 硬化性樹脂は、グリシジル基、イソシアナート基、ヒドロキシ基、カルボキシル基、アミド基、エポキシド基、環状エーテル基、サルファイド基、アセタール基及びラクトン基から選択される1つ以上の硬化性官能基を含むことを特徴とする、請求項7に記載の封止フィルム。
- 硬化性樹脂が分子構造内で環状構造を含むエポキシ樹脂であることを特徴とする、請求項7に記載の封止フィルム。
- 硬化性樹脂がシラン変性エポキシ樹脂であることを特徴とする、請求項7に記載の封止フィルム。
- 封止フィルム内の全体の水分吸着剤の質量に基づいて、前記亀裂防止層には0〜20%、前記水分防止層には80〜100%の水分吸着剤を含むことを特徴とする、請求項1に記載の封止フィルム。
- 水分吸着剤は、水分反応性吸着剤、物理的吸着剤、またはこれらの混合物であることを特徴とする、請求項1に記載の封止フィルム。
- 水分反応性吸着剤は、アルミナ、金属酸化物、金属塩または五酸化リンであって、前記物理的吸着剤は、シリカ、ゼオライト、ジルコニア、チタニアまたはモンモリロナイトであることを特徴とする、請求項12に記載の封止フィルム。
- 水分反応性吸着剤が、P2O5、Li2O、Na2O、BaO、CaO、MgO、Li2SO4、Na2SO4、CaSO4、MgSO4、CoSO4、Ga2(SO4)3、Ti(SO4)2、NiSO4、CaCl2、MgCl2、SrCl2、YCl3、CuCl2、CsF、TaF5、NbF5、LiBr、CaBr2、CeBr3、SeBr4、VBr3、MgBr2、BaI2、MgI2、Ba(ClO4)2、及びMg(ClO4)2からなる群から選択された1つ以上であることを特徴とする、請求項12に記載の封止フィルム。
- 亀裂防止層は、接着付与剤をさらに含むことを特徴とする、請求項1に記載の封止フィルム。
- 接着付与剤は、水素化された環状オレフィン系重合体であることを特徴とする、請求項15に記載の封止フィルム。
- 封止層は合着層をさらに含み、前記合着層は亀裂防止層の下部に位置し、前記合着層が有機電子デバイス封止時に有機電子デバイスと接触するように形成されていることを特徴とする、請求項1に記載の封止フィルム。
- 合着層は、封止樹脂または水分吸着剤を含むことを特徴とする、請求項17に記載の封止フィルム。
- 基板と、前記基板上に形成された有機電子デバイスと、前記有機電子デバイスを封止する請求項1〜18のいずれか一項による封止フィルムと、を含み、前記封止フィルムが前記有機電子デバイスの全面に付着していることを特徴とする有機電子デバイスの封止製品。
- 有機電子デバイスが有機発光ダイオードであることを特徴とする、請求項19に記載の有機電子デバイスの封止製品。
- 上部に有機電子デバイスが形成された基板に、請求項1〜18のいずれか一項による封止フィルムが、前記有機電子デバイスの全面に付着するように適用する段階と、前記封止フィルムを硬化する段階と、を含むことを特徴とする有機電子デバイスの封止方法。
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TWI647109B (zh) | 2019-01-11 |
CN105247700A (zh) | 2016-01-13 |
US20160118620A1 (en) | 2016-04-28 |
EP3001476A4 (en) | 2017-01-25 |
CN105247700B (zh) | 2018-04-27 |
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