JP6282844B2 - Substrate with thin film and method for manufacturing transfer mask - Google Patents

Description

  The present invention relates to a method for manufacturing a transfer mask used for manufacturing a semiconductor device and the like, and a method for manufacturing a substrate with a thin film used for manufacturing a transfer mask.

  In general, in a manufacturing process of a semiconductor device, a fine pattern is formed using a photolithography method. Also, a number of transfer masks, usually called photomasks, are used to form this fine pattern. This transfer mask is generally provided with a fine pattern made of a metal thin film or the like on a translucent glass substrate, and the photolithographic method is also used in the manufacture of this transfer mask.

  In the manufacture of a transfer mask by photolithography, a mask blank having a thin film (for example, a light shielding film) for forming a transfer pattern (mask pattern) on a light-transmitting substrate such as a glass substrate is used. The production of a transfer mask using the mask blank includes a drawing process for drawing a desired pattern on the resist film formed on the mask blank, and developing the resist film after drawing to form a desired resist pattern. The developing process is formed, the etching process is performed to etch the thin film using the resist pattern as a mask, and the process is performed to peel and remove the remaining resist pattern. In the developing step, a desired pattern is drawn on the resist film formed on the mask blank, and then a developing solution is supplied to dissolve a portion of the resist film that is soluble in the developing solution, thereby forming a resist pattern. . In the etching step, the resist pattern is used as a mask to remove the exposed portion of the thin film on which the resist pattern is not formed by dry etching or wet etching, thereby forming a desired mask pattern on the translucent substrate. Form. Thus, a transfer mask is completed.

  As a type of transfer mask, a phase shift mask is known in addition to a binary mask (binary mask) having a light shielding film pattern made of a chromium-based material on a conventional translucent substrate. This phase shift type mask has a structure having a phase shift film on a translucent substrate, and this phase shift film has a predetermined phase difference. For example, a material containing a molybdenum silicide compound is used. . In addition, binary masks using a material containing a metal silicide compound such as molybdenum as a light-shielding film have been used.

  In recent years, in the semiconductor industry, with the high integration of semiconductor devices, a fine pattern exceeding the transfer limit of the conventional photolithography method using ultraviolet light has been required. In order to make it possible to form such a fine pattern, EUV lithography, which is an exposure technique using extreme ultraviolet (hereinafter referred to as “EUV”) light, is promising. Here, EUV light refers to light in the wavelength band of the soft X-ray region or the vacuum ultraviolet region, and specifically refers to light having a wavelength of about 0.2 to 100 nm. A reflective mask has been proposed as a transfer mask used in this EUV lithography. In such a reflective mask, a multilayer reflective film that reflects exposure light is formed on a substrate, and an absorber film that absorbs exposure light is formed in a pattern on the multilayer reflective film.

  As described above, as the demand for miniaturization in the lithography process increases, problems in the lithography process are becoming prominent. One of the problems is related to defect information on a mask blank substrate or the like used in a lithography process. Conventionally, in a blank inspection or the like, the position of a substrate defect is specified by the distance from the position where the substrate center is the origin (0, 0). For this reason, the positional accuracy is low, and there is a variation in detection between apparatuses, and it is difficult to avoid in the order of μm even when patterning is performed on a pattern forming thin film while avoiding defects. For this reason, the defect is avoided by changing the pattern transfer direction or by roughly shifting the transfer position on the order of mm.

  Under such circumstances, for the purpose of increasing the inspection accuracy of the defect position, for example, a proposal has been made in which a reference mark is formed on a mask blank substrate and the position of the defect is specified using this as a reference position. In Patent Document 1, a size equivalent to a sphere equivalent diameter of 30 to 30 mm is provided on the film forming surface of a reflective mask blank substrate for EUV lithography so that the position of a minute defect having a sphere equivalent diameter of about 30 nm can be accurately specified. It is disclosed to form at least three marks of 100 nm.

International Publication No. 2008/129914

  It is theoretically possible to increase the inspection accuracy of the defect position of a substrate with a thin film such as a substrate with a multilayer reflective film and a mask blank by the method disclosed in Patent Document 1. However, since the size of the mark is as small as 30 to 100 nm in terms of a sphere equivalent diameter, for example, there is a problem that it is difficult to detect with a normally used defect inspection apparatus or the like, and the reproducibility of detection is poor. It is difficult to determine a reference position for identification. Patent Document 1 discloses that an auxiliary mark for identifying the mark is formed around the mark. The auxiliary mark is used to roughly specify the position where the mark is formed. Even if it can be done, the presence of the mark itself cannot be easily recognized unless a special inspection device with extremely high detection accuracy is used, so that it is difficult to specify an accurate reference point.

  Recently, an attempt has been made to reduce defects by correcting drawing data so that an absorber film pattern is formed at a location where a defect exists based on the defect data and device pattern data of the mask blank (Defect mitigation technology) has been proposed. In order to realize the above technique, an electron beam is drawn in the state of a mask blank with a resist film in which an absorber film is formed on a multilayer reflective film and a resist film for forming an absorber film pattern is further formed. Also in the apparatus, a reference mark is detected with an electron beam, and electron beam drawing is performed based on the corrected and corrected drawing data based on the detected reference point. However, since the reference mark needs to have a certain contrast with respect to the electron beam scanning, the mark having the size disclosed in Patent Document 1 has a problem that the contrast with respect to the electron beam scanning cannot be sufficiently obtained. .

  In order to form a reference mark on a substrate with a thin film such as a mask blank or a substrate with a multilayer reflective film and manage the relative position of the reference mark and the defect with high accuracy (coordinate management), the reference mark is easy to detect. And the variation in defect detection position based on the reference mark is small (for example, in order to realize the above-described defect mitigation technology, the defect detection position when the reference mark is used as a reference point) Variation of 100 nm or less) is required. However, the prior art disclosed in the above-mentioned Patent Document 1 is still insufficient to satisfy such a requirement.

  In addition, when a reference mark is formed on a substrate with a thin film such as a substrate with a multilayer reflective film, a reflective mask blank, and a binary mask blank by electron beam scanning, there is a problem that the manufacturing cost is high.

  Therefore, the present invention has been made in view of such conventional problems. A first object of the present invention is to provide a substrate with a multilayer reflective film, a reflective mask blank, and a mask blank (binary mask) capable of forming a reference mark for performing coordinate management of defects with high accuracy at a relatively low cost. It is to provide a method for manufacturing a substrate with a thin film such as a blank. A second object of the present invention is to provide a method for manufacturing a transfer mask such as a reflective mask and a binary mask, which uses these thin film-attached substrates and reduces defects, and which is relatively low cost.

  In order to solve the above problems, the present inventor, when forming a reference mark on a substrate with a thin film such as a substrate with a multilayer reflective film, a reflective mask blank and a mask blank, It has been found that by using a photolithography technique using an imprint plate, a reference mark for performing defect coordinate management with high accuracy can be formed at a relatively low cost, and the present invention has been achieved.

  That is, in order to solve the above problems, the present invention has the following configuration. This invention is the manufacturing method of the board | substrate with a thin film characterized by being the following structures 1-8. In addition, the present invention is a method for manufacturing a transfer mask, characterized by having the following configuration 9.

(Configuration 1)
Configuration 1 of the present invention is a photomask or imprint plate on which three or more fiducial mark patterns that are not placed on the same virtual straight line are formed, and at least one transfer object to which the fiducial mark pattern is transferred. A substrate with a thin film for preparing two substrates with a thin film; a resist film forming step for forming a resist film on the substrate with a thin film; and the photomask or the imprint plate with respect to the resist film. A resist pattern forming step of transferring the reference mark pattern to form a resist pattern having the reference mark pattern, and at least one thin film formed on the substrate with the thin film using the resist pattern as a mask A compound of fluorine with any one element of chlorine, bromine, iodine, and xenon A reference mark forming step of forming a pattern of the reference mark on the thin film by removing it in contact with a non-excited substance, and a resist pattern peeling step of peeling off the resist pattern. It is a manufacturing method of a board | substrate with a thin film.

  According to Configuration 1 of the present invention, a substrate with a multilayer reflective film, a reflective mask blank, and a mask blank (binary mask) that can form a reference mark for performing coordinate management of defects with high accuracy at a relatively low cost. A manufacturing method of a substrate with a thin film such as a blank can be provided. In addition, according to the present invention, it is possible to provide a relatively low-cost manufacturing method of a transfer mask using these thin film-coated substrates and reducing defects.

(Configuration 2)
In the configuration 2 of the present invention, a plurality of the thin film-attached substrates are prepared in the thin film-attached substrate preparing step, and the reference mark pattern is simultaneously formed on the thin films of the plurality of thin film-attached substrates in the reference mark forming step The method for manufacturing a substrate with a thin film according to Configuration 1, wherein the substrate is formed.

  According to Configuration 2 of the present invention, in the fiducial mark forming step, the reference mark pattern is simultaneously formed on the thin films of the plurality of thin film-attached substrates, thereby manufacturing a lower-cost reflective mask, binary mask, and the like. be able to. Further, it is preferable because variations in the reference mark forming position between a plurality of thin film-attached substrates can be reduced.

(Configuration 3)
A third aspect of the present invention is the method for manufacturing a substrate with a thin film according to the first or second aspect, wherein the substance is ClF ₃ gas.

According to Configuration 3 of the present invention, since the substance to be contacted to remove the thin film is ClF ₃ gas, the thin film can be reliably removed.

(Configuration 4)
According to Configuration 4 of the present invention, the substrate with a thin film has a multilayer reflection in which a high refractive index layer made of a high refractive index material and a low refractive index layer made of a low refractive index material are alternately laminated on the main surface of the substrate. 4. A thin film according to any one of Structures 1 to 3, wherein the thin film is a substrate with a multilayer reflective film on which a film is formed, and the high refractive index material and the low refractive index material are materials that can be removed by the substance. It is a manufacturing method of an attached board.

  According to Configuration 4 of the present invention, it is possible to obtain a multilayer reflective film having good reflectance characteristics with respect to EUV light, and to remove the multilayer reflective film using a predetermined substance in order to form a reference mark. it can.

(Configuration 5)
Configuration 5 of the present invention is the method for manufacturing a substrate with a thin film according to Configuration 4, wherein the high refractive index material is silicon and the low refractive index material is molybdenum.

  According to Configuration 5 of the present invention, since the high refractive index material is silicon and the low refractive index material is molybdenum, a multilayer reflective film having favorable reflectance characteristics with respect to EUV light can be reliably obtained. In addition, the processing time when forming the reference mark can be shortened.

(Configuration 6)
Configuration 6 of the present invention is the method for manufacturing a substrate with a thin film according to Configuration 4 or 5, wherein the multilayer reflective film-coated substrate has a protective film formed on the multilayer reflective film.

  According to Configuration 6 of the present invention, the substrate with a thin film, which is a reflective mask blank, has a protective film on the multilayer reflective film, so that damage to the surface of the multilayer reflective film when a transfer mask (EUV mask) is manufactured. Therefore, the reflectance characteristics with respect to EUV light are further improved.

(Configuration 7)
According to Configuration 7 of the present invention, the substrate with a thin film is a reflective type in which an absorber film made of a material that can be removed by the substance is formed on a side of the substrate with a multilayer reflective film on which the multilayer reflective film is formed. It is a mask blank, The manufacturing method of the board | substrate with a thin film in any one of the structures 4 thru | or 6 characterized by the above-mentioned.

  According to Configuration 7 of the present invention, an absorber film that absorbs EUV light serving as a transfer pattern is formed on the multilayer reflective film in the multilayer reflective film-coated substrate having the above-described configuration. A reflective mask blank having a reference mark as a reference is obtained.

(Configuration 8)
Configuration 8 of the present invention is the method for manufacturing a substrate with a thin film according to Configuration 7, wherein the absorber film is made of a material containing Ta.

  According to Configuration 8 of the present invention, since the absorber film is made of a material containing Ta, an absorber film having predetermined appropriate absorption with respect to EUV light can be obtained.

(Configuration 9)
In the ninth aspect of the present invention, the absorber film is patterned by using the substrate with a thin film obtained by the method for manufacturing a substrate with a thin film according to the seventh or eighth aspect, thereby producing a reflective mask. A method for manufacturing a transfer mask, characterized in that:

  According to Configuration 9 of the present invention, since the reference mark for performing defect coordinate management with high accuracy can be used with a substrate with a thin film formed at a relatively low cost, the defect can be reduced relatively low. A costly transfer mask can be manufactured.

  According to the present invention, a substrate with a multilayer reflective film, a reflective mask blank, and a mask blank (such as a binary mask blank) that can form a reference mark for performing coordinate management of defects with high accuracy at a relatively low cost. A method for manufacturing a substrate with a thin film such as the above can be provided. In addition, according to the present invention, it is possible to provide a relatively low-cost manufacturing method of a transfer mask using these thin film-coated substrates and reducing defects.

  Specifically, according to the manufacturing method of the present invention, any of the electron beam drawing apparatus and the defect inspection apparatus can be reliably detected, and the defect position reference determined by the scanning of the electron beam and the defect inspection light is used. A reference mark with a small point shift can be formed at a relatively low cost. Therefore, it is possible to provide a substrate with a thin film, such as a substrate with a multilayer reflective film, a reflective mask blank, and a mask blank, which can perform defect coordinate management (relative position management between a reference mark and a defect) with high accuracy. .

  In addition, according to the manufacturing method of the present invention, these multi-layer reflective film-coated substrate, reflective mask blank, and mask blank are used, and transfer with reduced defects is performed by correcting drawing data based on these defect information. A mask can be provided.

It is a top view which shows the example of arrangement | positioning of the reference mark in this invention. It is a figure which shows the example of a shape and arrangement | positioning of the main mark and auxiliary mark which comprise the reference | standard mark in this invention. It is a figure for demonstrating the method to determine the reference point using the reference mark in this invention. It is a figure which shows the other example of a shape of the main mark arrange | positioned at the mask for transcription | transfer. It is sectional drawing of the board | substrate with a multilayer reflecting film which concerns on this invention. It is sectional drawing of the reflective mask blank which concerns on this invention. It is sectional drawing of the binary mask blank which concerns on this invention. It is sectional drawing of the reflection type mask which concerns on this invention. It is sectional drawing of the binary mask which concerns on this invention. It is a top view which shows another example of arrangement | positioning of the reference mark in this invention arrange | positioned at the transfer mask. It is a figure which shows the example of a shape and arrangement | positioning of a reference mark in the case of forming on the edge reference | standard. It is a figure for demonstrating the method of forming a reference mark by edge reference | standard. It is a figure for demonstrating the method of forming a reference mark by edge reference | standard. It is sectional drawing of the reflective mask blank which concerns on other embodiment of this invention. It is a schematic block diagram of an example of the processing apparatus used at the process of removing a thin film. It is a schematic block diagram of another example of the processing apparatus used at the process of removing a thin film.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  In the method for manufacturing a substrate with a thin film of the present invention, a photomask 80 or an imprint plate on which three or more patterns of fiducial marks 13 that are not placed on the same virtual straight line are formed is prepared. Furthermore, at least one substrate with a thin film, which is a transfer target to which the pattern of the reference mark 13 is transferred, is prepared (substrate preparation step with a thin film). Next, a resist film is formed on the surface of the substrate with a thin film (resist film forming step). Next, the pattern of the reference mark 13 formed on the photomask 80 or the imprint plate described above is transferred to the resist film of the substrate with a thin film to form a resist pattern (resist pattern forming step). Furthermore, in the method for manufacturing a substrate with a thin film according to the present invention, the resist pattern of the substrate with a thin film is used as a mask to contact and remove a non-excited substance containing a predetermined compound to form a pattern of the reference mark 13 on the thin film. (Reference mark formation process). Finally, by peeling off the resist pattern (resist pattern peeling step), a substrate with a thin film on which the predetermined reference mark 13 is formed can be obtained.

  In the present invention, the substrate with a thin film has at least one thin film constituting the mask blank on the surface of the mask blank substrate. The predetermined thin film constituting the mask blank is, for example, the multilayer reflective film 31 and the absorber film 41 when the reflective mask 60 is manufactured. Therefore, the multilayer reflective film-coated substrate 30 and the reflective mask blank 40 are a kind of thin film-coated substrate. In addition, the predetermined thin film constituting the binary mask blank 50 in the case of manufacturing the binary mask 70 is a light shielding film 51, an antireflection film, or the like. In the case of a phase shift type mask, a phase shift film is further included. Therefore, the binary mask blank 50 and the phase shift mask blank are a kind of substrate with a thin film.

  In the method for manufacturing a substrate with a thin film of the present invention, a photomask 80 or an imprint plate on which three or more patterns of fiducial marks 13 that are not placed on the same virtual straight line are formed is prepared. Reference mark 13 that can be used in the present invention (hereinafter, also simply referred to as “reference mark 13 of the present invention”) will be described in detail first.

[Reference mark 13]
FIG. 1 is a plan view of a photomask 80 showing an arrangement example of the reference marks 13. First, the shape of the reference mark 13 formed on the photomask 80 or the imprint plate will be described.

  In FIG. 1, two types of marks are formed: a rough alignment mark 12 having a relatively large size and a reference mark 13 of the present invention which is a small fine mark. In FIG. 1, these reference marks 13 are shown on the surface of the photomask 80. FIG. 1 shows an example of the arrangement of the reference marks 13 on the photomask 80 or the imprint plate. As will be described later, the reference mark 13 pattern includes the reflective mask blank 40 and the binary mask blank 50. And transferred to a substrate with a thin film. Therefore, here, the reference mark 13 will be described on the assumption that the reference mark 13 is formed on the substrate with a thin film.

  The rough alignment mark 12 itself does not have the role of the reference mark 13, but has the role of making it easy to detect the position of the reference mark 13. The fiducial mark 13 is small in size, and it is difficult to visually estimate the position. In addition, if it is attempted to detect the reference mark 13 from the beginning with inspection light or an electron beam, the detection takes a long time, and if a resist film is formed, unnecessary resist exposure may occur, which is not preferable. By providing the rough alignment mark 12 whose positional relationship with the reference mark 13 is determined in advance, the reference mark 13 can be detected quickly and easily.

  FIG. 1 shows an example in which the rough alignment marks 12 are arranged at four locations near the corner on the surface of the reflective mask blank 40 and the reference marks 13 are arranged at two locations near each rough alignment mark 12. . Both the rough alignment mark 12 and the reference mark 13 are preferably formed on the boundary line of the pattern formation region indicated by the broken line A on the main surface of the substrate, or on the outer peripheral side from the pattern formation region. However, too close to the outer periphery of the substrate is not preferable because the flatness of the main surface of the substrate may be a region where the flatness is not very good or may intersect with other types of recognition marks.

  The numbers of the reference marks 13 and the rough alignment marks 12 are not particularly limited. Although at least three reference marks 13 are required, three or more reference marks may be used. In order to perform defect coordinate management with high accuracy, three or more patterns of reference marks 13 that are not placed on the same virtual straight line are required as the reference marks 13.

  As will be described below with reference to FIG. 2 and the like, in the reference mark 13 of the present invention, the main mark 13a for determining a position (reference point) serving as a reference for the defect position is arranged around the main mark 13a. Auxiliary marks 13b and 13c for roughly specifying the mark 13a are arranged. Therefore, the rough alignment mark 12 may not be provided if there is no particular inconvenience in detecting the reference mark 13 of the present invention from the beginning with inspection light or an electron beam.

  That is, in the present invention, as shown in FIG. 10, the rough alignment mark 12 is not provided, and the reference marks 13 of the present invention are arranged at four locations near the corner on the surface of the reflective mask blank 40 as an example. You may make it do. Accordingly, the process of forming the relatively large rough alignment mark 12 can be omitted, and the processing time for forming the reference mark 13 on the photomask 80 or the imprint plate can be greatly shortened.

  FIG. 2 is a diagram illustrating a shape example and an arrangement example of the main mark 13 a and the auxiliary marks 13 b and 13 c constituting the reference mark 13. FIG. 3 is a diagram for explaining a method of determining a reference point using the reference mark 13 of the present invention.

  The reference mark 13 serves as a reference for the defect position in the defect information. However, the reference mark 13 of the present invention includes a main mark 13a for determining a position (reference point) to be a reference for the defect position, It consists of auxiliary marks 13b and 13c arranged around the main mark 13a. As a typical reference mark 13, the main mark 13a has a point-symmetric shape, and a defect in the electron beam scanning direction or defect inspection by the electron beam drawing apparatus when the mask is manufactured. A portion having a width of 200 nm to 10 μm with respect to the scanning direction of the inspection light is included.

  2 and 3 show as an example a reference mark 13 composed of the main mark 13a and two auxiliary marks 13b and 13c arranged around the main mark 13a.

  The main mark 13a is preferably a polygonal shape having at least two sets of sides that are perpendicular to and parallel to the scanning direction of the electron beam drawing apparatus or the defect inspection light (X direction and Y direction in FIG. 3). . As described above, the main mark 13a has a polygonal shape having at least two sets of sides that are perpendicular to and parallel to the scanning direction of the electron beam or the defect inspection light, so that it can be detected by the electron beam drawing apparatus and the defect inspection apparatus. And the variation of the defect detection position can be further suppressed. 2 and 3, as a specific example, the main mark 13a is a square having the same length in both the vertical and horizontal directions (X and Y directions). In this case, the vertical and horizontal lengths (L) are each preferably 200 nm or more and 10 μm or less.

  The shape of the main mark 13a is preferably point-symmetric. For example, as shown in FIG. 4A, the square corners are rounded, as shown in FIG. 4B, as shown in FIG. 4B, as shown in FIG. ) As shown in FIG. Also in this case, it is preferable that the size of the main mark 13a (vertical and horizontal length L) is 200 nm or more and 10 μm or less. As a specific example, when the main mark 13a has a cross shape, the size (vertical length L) can be set to 5 μm or more and 10 μm or less. Although not shown, the main mark 13a may be a regular circle having a diameter of 200 nm to 10 μm.

  The two auxiliary marks 13b and 13c are arranged around the main mark 13a along the scanning direction of the electron beam or defect inspection light (X direction and Y direction in FIG. 3). The auxiliary marks 13b and 13c are preferably rectangular having a short side parallel to a long side perpendicular to the scanning direction of the electron beam or defect inspection light. Since the auxiliary marks 13b and 13c have a rectangular shape having a short side parallel to a long side perpendicular to the scanning direction of the electron beam or the defect inspection light, the auxiliary marks 13b and 13c are reliably scanned by the electron beam drawing apparatus and the defect inspection apparatus. Since it can be detected, the position of the main mark 13a can be easily specified. In this case, it is desirable that the long sides of the auxiliary marks 13b and 13c have a length that can be detected by the minimum number of scans of the electron beam drawing apparatus and the defect inspection apparatus. For example, it is desirable that the long sides of the auxiliary marks 13b and 13c have a length of 25 μm or more and 600 μm or less. More preferably, the length of the long side is from 25 μm to 400 μm, and more preferably from 25 μm to 200 μm.

  Further, the auxiliary marks 13b and 13c and the main mark 13a may be separated by a predetermined distance or may not be separated. When the auxiliary marks 13b, 13c and the main mark 13a are separated from each other, the distance is not particularly limited, but is preferably in the range of, for example, about 25 μm to 50 μm.

  When the main mark 13a and the auxiliary marks 13b and 13c are formed on a substrate with a thin film, the cross-sectional shape is a concave shape, and recognition is performed by providing a desired depth in the height direction of the reference mark 13. The reference mark 13 can be used. From the viewpoint of improving the detection accuracy by an electron beam or defect inspection light, the cross-sectional shape is preferably formed so as to spread from the bottom of the concave shape toward the surface side, and the inclination angle of the side wall of the reference mark 13 in this case Is preferably 75 degrees or more. The inclination angle of the side wall is more preferably 80 degrees or more, and further preferably 85 degrees or more.

  Using the reference mark 13 transferred to the substrate with the thin film, a reference point serving as a reference for the defect position is determined as follows (see FIG. 3). That is, the position of the main mark 13a is roughly specified by scanning the auxiliary marks 13b and 13c with an electron beam or defect inspection light in the X and Y directions and detecting these auxiliary marks 13b and 13c. Can do. After scanning the electron beam or inspection light in the X direction and the Y direction on the main mark 13a whose position is specified, the intersection point P (usually detected by the scanning of the auxiliary marks 13b and 13c) (normally And the approximate center of the main mark 13a) to determine the reference point.

  The positions where the main mark 13a and auxiliary marks 13b and 13c constituting the reference mark 13 of the present invention are formed are not particularly limited. For example, in the case of the reflective mask blank 40, the reflective mask blank 40 may be formed at any position as long as the multilayer reflective film 31 is formed. For example, a substrate, a base layer 21 (described later), a multilayer reflective film 31, a protective film 32 (sometimes referred to as a capping layer or a buffer layer), an absorber film 41, an etching mask film formed on the absorber film 41 Any of the positions may be used.

  In the reflective mask 60 using EUV light as exposure light, in particular, defects present in the multilayer reflective film 31 can hardly be corrected, and can be a serious phase defect on the transfer pattern. In order to reduce transfer pattern defects, defect information on the multilayer reflective film 31 is important. Therefore, it is desirable to perform defect inspection at least after film formation of the multilayer reflective film 31 to obtain defect information. For this purpose, it is preferable to form the reference mark 13 of the present invention on the substrate 30 with a multilayer reflective film. In particular, it is preferable to form the reference mark 13 of the present invention on the multilayer reflective film 31 from the viewpoint of easy detection.

  Further, after the formation of the reference mark 13, it is preferable to form the reference mark 13 on the absorber film 41 in the reflective mask blank 40 from the viewpoint of suppressing a change in optical characteristics (for example, reflectance) due to cleaning. In this case, since the reference mark 13 is not formed at the stage of the substrate 30 with the multilayer reflective film, the defect inspection in the reflective mask blank 40 and the coordinate management of the defect with reference to the reference mark 13 are performed as follows. be able to.

  First, a defect inspection apparatus performs defect inspection on the substrate main surface with the multilayer reflection film 31 formed on the substrate using the center of the substrate main surface as a reference point. Get location information. Next, after the protective film 32 and the absorber film 41 are formed on the multilayer reflective film 31, the reference mark 13 of the present invention is formed at a predetermined position of the absorber film 41, and the reference mark 13 is formed. A mold mask blank 40 is obtained.

  Defect inspection is performed by a defect inspection apparatus with reference to the reference mark 13 described above. Since the absorber film 41 is formed on the multilayer reflective film 31 as described above, the defect inspection data also reflects the defect inspection of the substrate 30 with the multilayer reflective film obtained above. Therefore, based on the defect in which the defect of the substrate 30 with the multilayer reflective film and the defect of the reflective mask blank 40 match, the defect inspection data of the substrate 30 with the multilayer reflective film, the defect inspection data of the reflective mask blank 40, and By comparing the above, it is possible to obtain the defect inspection data of the multilayer reflective film-coated substrate 30 and the defect inspection data of the reflective mask blank 40 based on the reference mark 13.

  A method for forming the main mark 13a and the auxiliary marks 13b and 13c constituting the reference mark 13 of the present invention on the photomask 80 or the imprint plate is not particularly limited. For example, the photomask 80 or the imprint plate can be formed by a photolithography method, a formation method using a laser beam or an ion beam, or the like.

  As described above, the reference mark 13 of the present invention is formed on the photomask 80 or the imprint plate, and the reference mark 13 is transferred to a substrate with a thin film such as the reflective mask blank 40 to thereby attach the thin film of the present invention. The reference mark 13 on the substrate can be easily detected by either an electron beam drawing apparatus or an optical defect inspection apparatus, in other words, can be reliably detected. Thereby, in the defect inspection, it is possible to determine the reference point of the defect position and acquire the accurate defect information (defect map) including the defect position (relative position between the reference point and the defect) information. Furthermore, in the manufacture of the mask, the drawing data is corrected (corrected) with high accuracy so as to reduce the influence of the defect by collating with drawing data (mask pattern data) designed in advance based on this defect information. As a result, defects can be reduced in the finally manufactured reflective mask 60.

  In the above embodiment, an example in which the two auxiliary marks 13b and 13c are arranged around the main mark 13a along the scanning direction (X direction, Y direction) of the electron beam drawing apparatus or the defect inspection apparatus. Although described, the present invention is not limited to such an embodiment. For example, in a method in which detection of defects is not based on scanning of inspection light, if the positional relationship between the main mark 13a and the auxiliary marks 13b and 13c is specified, the arrangement positions of the auxiliary marks 13b and 13c with respect to the main mark 13a are arbitrary. It is. In this case, the edge can be used as the reference point instead of the center of the main mark 13a.

  Incidentally, as described above, the reference mark 13 of the present invention is formed on the boundary line of the pattern formation region indicated by the broken line A on the surface of the photomask 80 or at an arbitrary position on the outer peripheral side from the pattern formation region (see FIG. 1 and FIG. 10). In this case, it is preferable to form the reference mark 13 based on the edge reference, or to specify the formation position of the reference mark 13 using a coordinate measuring instrument after the reference mark 13 is formed.

  First, a method for forming the reference mark 13 on the photomask 80 based on the edge reference will be described. 12 and 13 are views for explaining a method of forming the reference mark 13 on the basis of the edge.

  For example, when FIB (focused ion beam) is adopted as the reference mark 13 forming means for the photomask 80 or the imprint plate, and the reference mark 13 is formed on the photomask 80 or the imprint plate, the photomask 80 or imprint. The edge of the plate is detected. When the fiducial mark 13 is processed by FIB, the edge of the glass substrate 11 of the photomask 80 or imprint plate can be recognized by a secondary electron image, a secondary ion image, or an optical image. Further, when the reference mark 13 is processed by other methods (for example, indentation), it can be recognized by an optical image. As shown in FIG. 12, for example, the edge coordinates of four sides (locations with circles) of the glass substrate 11 (for convenience of illustration, the photomask 80 or the thin film of the imprint plate is omitted) are shown. Is confirmed, tilt correction is performed, and the origin (0, 0) is obtained. The origin in this case can be arbitrarily set, and may be the corner or center of the substrate.

  In this way, the reference mark 13 is formed by FIB at a predetermined position from the origin set by the edge reference. FIG. 13 shows a predetermined position from the origin O (0, 0) set at an arbitrary corner of the substrate on the basis of the edge, specifically, the X distance from the edge of the end face 11A on both sides of the origin O, and the end face 11B. In this case, the reference mark 13 is formed at a distance Y from the edge. In this case, the reference mark formation coordinates (X, Y) with reference to the origin O (0, 0) are the formation position information of the reference mark 13. The same applies to the reference marks 13 formed at other positions.

  A reference mark 13 on a substrate with a thin film (a substrate 30 with a multilayer reflective film, a reflective mask blank 40, a binary mask blank 50, etc.) onto which a photomask 80 or an imprint plate reference mark 13 formed with such an edge reference is transferred. Is detected by a defect inspection apparatus or an electron beam drawing apparatus, the formation position information of the reference mark 13, that is, the distance from the edge is known, and therefore the formation position of the reference mark 13 can be easily specified.

  Further, a method of specifying the formation position of the reference mark 13 with a coordinate measuring instrument after forming the reference mark 13 at an arbitrary position on the photomask 80 or the imprint plate can be applied. This coordinate measuring instrument measures the formation coordinates of the reference mark 13 on the basis of an edge. For example, a high-precision pattern position measuring device (LMS-IPRO4 manufactured by KLA-Tencor) can be used. The formation coordinates become the formation position information of the reference mark 13. In addition, the coordinate measuring instrument also has a role of converting the reference coordinates of the electron beam drawing apparatus, so that a user who has been provided with a thin film substrate to which the reference mark 13 of the photomask 80 or the imprint plate is transferred can be easily used as a reference. The defect position specified by the defect inspection apparatus based on the mark 13 and the drawing data can be collated with high accuracy, and defects can be reliably reduced in the finally manufactured mask.

  As described above, the reference mark 13 is formed on the photomask 80 or the imprint plate on the edge basis, or the reference mark 13 is formed at an arbitrary position and then the reference mark 13 is formed by the coordinate measuring instrument. According to this method, the formation position of the transferred reference mark 13 such as the multilayer reflective film-coated substrate 30 can be easily specified by a defect inspection apparatus or an electron beam drawing apparatus. It is possible to reduce the size. Specifically, when the reference mark 13 of the present invention includes the main mark 13a and the auxiliary marks 13b and 13c, the width of the main mark 13a is 200 nm to 10 μm, and the long sides of the auxiliary marks 13b and 13c. For example, the size can be set to 25 μm or more and 250 μm or less. When the size of the reference mark 13 is reduced in this manner, or conversely, when the size of the reference mark 13 is increased, the above-described FIB is employed as a means for forming the reference mark 13 on the photomask 80 or the imprint plate. In this case, it is preferable because the processing time of the reference mark 13 can be shortened. Further, the detection time of the reference mark 13 can be shortened, which is preferable.

  FIG. 11 shows an example of the shape and arrangement of the reference mark 13 in the case of forming with the edge reference as described above, but the main mark 13a and auxiliary marks 13b and 13c as shown in FIG. Is a typical example. Further, as described above, since the size of the reference mark 13 can be reduced, the auxiliary marks 13b and 13c are not necessarily required. For example, only the main mark 13a as shown in FIG. is there. Furthermore, it is also possible to use four auxiliary marks 13b to 13e arranged around the main mark 13a as shown in FIG. 6C or a cross-shaped reference mark 13 as shown in FIG. .

  Further, when the reference mark 13 is formed at a predetermined position from the origin set with reference to the edge coordinates of the photomask 80 or the imprint plate, for example, a substrate with a thin film onto which the reference mark 13 is transferred, By providing the user with the formation position information (reference mark formation coordinates) of the reference mark 13, the user uses the formation position information of the reference mark 13 in the mask manufacturing process, for example. Can be reliably detected in a short time.

  Further, for example, after forming the reference mark 13 on the substrate with a thin film by transferring the reference mark 13 of the photomask 80 or the imprint plate, the position of the reference mark 13 is specified by a coordinate measuring instrument, and the reference mark By providing the user with the thin film-coated substrate on which the reference numeral 13 is formed and the formation position information (position coordinates of the identified reference mark 13) of the reference mark 13 in this case, the user can form the reference mark 13 The reference mark 13 can be reliably detected in a short time using the position information. Further, by specifying the formation position of the reference mark 13 with a coordinate measuring instrument, the reference coordinates of the electron beam drawing apparatus can be converted. Therefore, the user who is provided with the substrate with the thin film can easily collate the defect position specified by the defect inspection apparatus based on the reference mark 13 with the drawing data with high accuracy, and the mask to be finally manufactured Defects can be reliably reduced.

  Further, by providing the user with defect information (position information, size, etc.) based on the reference mark 13 in addition to the formation position information of the reference mark 13, the user can provide the formation position information of the reference mark 13. The reference mark 13 can be reliably detected in a short time by using it, and based on this defect information, the drawing data is corrected (corrected) with high accuracy so as to reduce the influence of the defect, and finally manufactured. Defects can be reduced in the mask to be used.

  In addition, the reflective mask blank 40 in which the absorber film 41 that absorbs EUV light is formed on the multilayer reflective film 31 in the thin film-coated substrate on which the reference mark 13 is formed corresponds to the formation position information of the reference mark 13. In addition, the user can reliably detect the reference mark 13 in a short time by using the formation position information of the reference mark 13 in mask manufacturing using the reflective mask blank 40. .

  Further, even in a mask blank (binary mask blank 50 or the like) in which a thin film to be a transfer pattern is formed on the substrate, the reference mark 13 is formed at a predetermined position from the origin set with reference to the edge coordinates of the substrate. By providing the user with the mask blank obtained by transferring the reference mark 13 of the photomask 80 or the imprint plate and the formation position information of the reference mark 13 in this case, the user can The reference mark 13 can be reliably detected in a short time by using the formation position information of the reference mark 13. Similarly, after the reference mark 13 is formed on the mask blank by transferring the reference mark 13 on the photomask 80 or the imprint plate, the formation position of the reference mark 13 is specified by a coordinate measuring instrument. By providing the user with the mask blank on which the reference mark 13 is formed and the formation position information of the reference mark 13 in this case in association with each other, the user uses the formation position information of the reference mark 13 for a short time. Can be reliably detected.

  Also in the mask blank, the defect information based on the reference mark 13 is added to the formation position information of the reference mark 13 and provided to the user, so that the user can be influenced by the defect based on the defect information. The drawing data can be corrected (corrected) with high accuracy so as to reduce, and defects in the finally manufactured mask can be reduced.

  Next, the step of preparing at least one substrate with a thin film, which is a transfer target to which the pattern of the reference mark 13 is transferred, among the steps of preparing the substrate with a thin film of the manufacturing method of the substrate with a thin film of the present invention will be described.

  As the substrate with a thin film, a substrate 30 with a multilayer reflective film and a reflective mask blank 40 for manufacturing a reflective mask 60 using EUV light as exposure light, and a binary mask blank 50 for manufacturing a binary mask 70 are used. Can be mentioned. The board | substrate 30 with a multilayer reflective film, the reflective mask blank 40, and the binary mask blank 50 are demonstrated concretely.

[Substrate with multilayer reflective film 30]
In the method for manufacturing a substrate with a thin film according to the present invention, as a substrate with a thin film, a high refractive index layer made of a high refractive index material and a low refractive index layer made of a low refractive index material are alternately formed on the main surface of the substrate. It is a substrate 30 with a multilayer reflective film in which a multilayered multilayer reflective film 31 is formed, and the high refractive index material and the low refractive index material are preferably materials that can be removed by the substance. Since the substrate with a thin film is the substrate 30 with a multilayer reflective film, a multilayer reflective film 31 having good reflectance characteristics with respect to EUV light can be obtained, and a predetermined substance is used for forming the reference mark 13. The multilayer reflective film 31 can be removed.

  As shown in FIG. 5, the present invention also provides a substrate 30 with a multilayer reflective film in which the reference mark 13 of the present invention is formed on the multilayer reflective film 31 that reflects EUV light.

  FIG. 5 shows an example in which the reference mark 13 is formed by removing a part of the film constituting the multilayer reflective film 31, but all the layers constituting the multilayer reflective film 31 are removed and the reference mark 13 is removed. May be formed.

  The multilayer reflective film 31 is a multilayer film in which a low refractive index layer and a high refractive index layer are alternately stacked. Generally, a thin film of a heavy element or a compound thereof and a thin film of a light element or a compound thereof are used. A multilayer film in which about 40 to 60 cycles are alternately stacked is used.

  For example, the multilayer reflective film 31 for EUV light having a wavelength of 13 to 14 nm is preferably a Mo / Si periodic laminated film in which Mo films and Si films are alternately laminated for about 40 periods. In addition, as the multilayer reflection film 31 used in the EUV light region, Ru / Si periodic multilayer film, Mo / Be periodic multilayer film, Mo compound / Si compound periodic multilayer film, Si / Nb periodic multilayer film, Si / Mo / A Ru periodic multilayer film, a Si / Mo / Ru / Mo periodic multilayer film, a Si / Ru / Mo / Ru periodic multilayer film, or the like can be used.

  In the method for manufacturing a substrate with a thin film according to the present invention, it is preferable that the high refractive index material is silicon and the low refractive index material is molybdenum. Since the high refractive index material is silicon and the low refractive index material is molybdenum, the multilayer reflective film 31 having good reflectance characteristics with respect to EUV light can be reliably obtained.

In the case of EUV exposure, the glass substrate 11 has a range of 0 ± 1.0 × 10 ⁻⁷ / ° C., more preferably 0 ± 0.3 × 10, in order to prevent pattern distortion due to heat during exposure. Those having a low coefficient of thermal expansion within the range of ⁻⁷ / ° C. are preferably used. As a material having a low thermal expansion coefficient in this range, for example, SiO ₂ —TiO ₂ glass, multicomponent glass ceramics, or the like can be used.

  The main surface of the glass substrate 11 on which the transfer pattern is formed is subjected to surface processing so as to have high flatness from the viewpoint of obtaining at least pattern transfer accuracy and position accuracy. In the case of EUV exposure, in the region of the main surface 142 mm × 142 mm on the side where the transfer pattern of the glass substrate 11 is formed, the flatness is preferably 0.1 μm or less, particularly preferably 0.05 μm or less. The main surface opposite to the side on which the transfer pattern is formed is a surface that is electrostatically chucked when being set in the exposure apparatus, and has a flatness of 1 μm or less, preferably 0.8 mm in a 142 mm × 142 mm region. 5 μm or less.

Moreover, as the glass substrate 11 of the multilayer reflective film-coated substrate 30, as described above, a material having a low thermal expansion coefficient such as SiO ₂ —TiO ₂ glass is used. As a surface roughness, it is difficult to realize high smoothness of, for example, RMS of 0.1 nm or less. Therefore, for the purpose of reducing the surface roughness of the glass substrate 11 or reducing defects on the surface of the glass substrate 11, it is preferable to form a base layer 21 on the surface of the glass substrate 11 as shown in FIG. As a material for such a base layer 21, it is not necessary to have a light-transmitting property with respect to exposure light, and a material that can obtain high smoothness when the surface of the base layer 21 is precisely polished and has good defect quality is preferable. Selected. For example, Si or a silicon compound containing Si (eg, SiO ₂ , SiON, etc.) is preferably used because high smoothness is obtained when it is precisely polished and the defect quality is good. In particular, it is preferable to use Si.

  The surface of the underlayer 21 is preferably a surface that has been precisely polished so as to have the smoothness required for a mask blank substrate. It is desirable that the surface of the underlayer 21 be precisely polished so that the root mean square roughness (RMS) is 0.15 nm or less, particularly preferably 0.1 nm or less. In consideration of the influence on the surface of the multilayer reflective film 31 formed on the underlayer 21, the surface of the underlayer 21 has a Rmax / RMS of 2 to 10 in relation to the maximum surface roughness (Rmax). It is preferable to perform precision polishing so as to be 2 to 8. The film thickness of the underlayer 21 is preferably in the range of 75 nm to 300 nm, for example.

[Reflective mask blank 40]
The method for manufacturing a substrate with a thin film according to the present invention is a method for manufacturing a reflective mask blank 40 in which an absorber film 41 serving as a transfer pattern is formed on the multilayer reflective film 31 in the substrate 30 with a multilayer reflective film having the above-described configuration. Also provide about. The substrate 30 with a multilayer reflective film includes a reflective mask blank 40 for manufacturing the reflective mask 60, that is, a multilayer reflective film 31 that reflects exposure light (EUV light) on the substrate, and exposure light (EUV light). Can be used as a substrate for the reflective mask blank 40, which is provided with an absorber film 41 for pattern formation that absorbs light in sequence.

  FIG. 6 shows a protective film 32 (capping layer) and an absorber film 41 for pattern formation that absorbs EUV light on the multilayer reflective film 31 in the multilayer reflective film-coated substrate 30 on which the reference mark 13 of FIG. 5 is formed. The reflection type mask blank 40 currently formed is shown. A back conductive film 42 is provided on the side of the glass substrate 11 opposite to the side on which the multilayer reflective film 31 and the like are formed.

  In the method for manufacturing a substrate with a thin film (reflection mask blank 40) of the present invention, the reflection mask blank 40 is formed on a side where the multilayer reflection film 31 of the substrate with multilayer reflection film 30 is formed by using a predetermined substance described later. A reflective mask blank 40 in which an absorber film 41 made of a removable material is formed is preferable. An absorber film 41 that absorbs EUV light serving as a transfer pattern is formed on the multilayer reflective film 31 of the substrate 30 with a multilayer reflective film, thereby forming a reference mark 13 that serves as a reference for a defect position in the defect information. The reflective mask blank 40 is obtained.

  The material of the absorber film 41 is not particularly limited. For example, it has a function of absorbing EUV light, and it is preferable to use a material containing Ta (tantalum) alone or Ta as a main component. The material mainly composed of Ta is usually an alloy of Ta. The crystalline state of the absorber film 41 preferably has an amorphous or microcrystalline structure from the viewpoint of smoothness and flatness. Examples of the material mainly containing Ta include a material containing Ta and B, a material containing Ta and N, a material containing Ta and B, and further containing at least one of O and N, Ta A material containing Si and Si, a material containing Ta, Si and N, a material containing Ta and Ge, a material containing Ta, Ge and N can be used. Further, for example, by adding B, Si, Ge or the like to Ta, an amorphous structure can be easily obtained and the smoothness can be improved. Furthermore, if N and O are added to Ta, the resistance to oxidation is improved, so that the stability over time can be improved. In order for the surface of the absorber film 41 to have a predetermined flatness, it is preferable that the absorber film 41 has an amorphous structure. The crystal structure can be confirmed by an X-ray diffractometer (XRD).

  In the method for manufacturing a substrate with a thin film (reflective mask blank 40) of the present invention, the absorber film 41 of the reflective mask blank 40 is preferably made of a material containing Ta. When the absorber film 41 is made of a material containing Ta, the absorber film 41 having a predetermined appropriate absorption with respect to EUV light can be obtained.

  In the method for manufacturing a substrate with a thin film of the present invention, the substrate 30 with a multilayer reflective film preferably has a protective film 32 formed on the multilayer reflective film 31.

  The protective film 32 and the buffer film can be provided between the multilayer reflective film 31 and the absorber film 41 for the purpose of protecting the multilayer reflective film 31 during patterning or pattern correction of the absorber film 41. As a material for the protective film 32, ruthenium or a ruthenium compound containing one or more elements of niobium, zirconium and rhodium in ruthenium is used in addition to silicon. Further, as the material of the buffer film, the above-mentioned chromium-based material is mainly used. The substrate 30 with the multilayer reflective film and the reflective mask blank 40 have the protective film 32 on the multilayer reflective film 31, thereby suppressing damage to the surface of the multilayer reflective film 31 when the reflective mask (EUV mask) 60 is manufactured. Therefore, the reflectance characteristic with respect to EUV light is further improved.

  The present invention also provides a reflective mask blank 40 in which the reference mark 13 of the present invention is formed on an absorber film 41 that absorbs EUV light, as shown in FIG. In FIG. 14, the same parts as those in FIG.

  FIG. 14 shows an example in which the reference film 13 is formed by removing the absorber film 41 so that the protective film 32 is exposed. However, the reference mark 13 is formed by removing part of the absorber film 41. Or the absorber film 41 and the protective film 32 are removed to form the reference mark 13 so that the multilayer reflective film 31 is exposed, or the absorber film 41, the protective film 32 and the multilayer reflective film 31 are removed to form the substrate. The reference mark 13 may be formed so that 11 is exposed.

[Mask blank]
The present invention also provides a mask blank in which a thin film to be a transfer pattern is formed on the mask blank glass substrate 11.

  FIG. 7 shows a binary mask blank 50 in which a light shielding film 51 is formed on the glass substrate 11. The reference mark 13 of the present invention is formed on the light shielding film 51. Although not shown, a phase shift mask blank can be obtained by providing the phase shift film or the phase shift film and the light shielding film 51 on the glass substrate 11. Further, the base layer 21 may be provided on the surface of the glass substrate 11 as necessary. The light shielding film 51 may be a single layer or a plurality of layers (for example, a laminated structure of a light shielding layer and an antireflection layer). Further, when the light shielding film 51 has a laminated structure of a light shielding layer and an antireflection layer, the light shielding layer may be composed of a plurality of layers. The phase shift film may be a single layer or a plurality of layers.

  As such a mask blank, for example, a binary mask blank 50 including a light shielding film 51 formed of a material containing chromium (Cr), a light shielding formed of a material containing a transition metal and silicon (Si). Binary mask blank 50 provided with film 51, binary mask blank 50 provided with light shielding film 51 formed of a material containing tantalum (Ta), material containing silicon (Si), or transition metal and silicon (Si) Examples thereof include a phase shift mask blank provided with a phase shift film formed of a material to be contained.

  Examples of the material containing chromium (Cr) include chromium alone and chromium-based materials (CrO, CrN, CrC, CrON, CrCN, CrOC, CrOCN, etc.).

  As the material containing tantalum (Ta), in addition to tantalum alone, a compound of tantalum and another metal element (for example, Hf, Zr, etc.), at least one of tantalum, nitrogen, oxygen, carbon, and boron A material containing two elements, specifically, a material containing TaN, TaO, TaC, TaB, TaON, TaCN, TaBN, TaCO, TaBO, TaBC, TaCON, TaBON, TaBCN, TaBCON, or the like.

  As the material containing silicon (Si), a material further containing at least one element of nitrogen, oxygen, and carbon, specifically, a silicon nitride, an oxide, a carbide, an oxynitride, A material containing a carbonate or carbonitride is preferred.

  Moreover, as the material containing the transition metal and silicon (Si), in addition to the material containing the transition metal and silicon, the material further contains at least one element of nitrogen, oxygen and carbon in addition to the transition metal and silicon. Is mentioned. Specifically, a transition metal silicide or a material containing a transition metal silicide nitride, oxide, carbide, oxynitride, carbonate, or carbonitride is preferable. As the transition metal, molybdenum, tantalum, tungsten, titanium, chromium, hafnium, nickel, vanadium, zirconium, ruthenium, rhodium, niobium, and the like are applicable. Of these, molybdenum is particularly preferred.

[Formation of reference mark 13]
Next, in the method for manufacturing a substrate with a thin film of the present invention, a method for forming the reference mark 13 on the substrate with a thin film will be described.

  In the method for manufacturing a substrate with a thin film of the present invention, in order to form the reference mark 13 on the substrate with a thin film, first, a resist for forming a resist film is formed on the substrate with a thin film (resist film forming step). A well-known thing can be used as a resist film. The resist film can be formed using a positive or negative resist for photolithography according to the pattern of the reference mark 13 formed on the photomask 80 or the imprint plate.

  Next, by transferring (exposure / developing) the pattern of the reference mark 13 formed on the photomask 80 or the imprint plate to the resist film formed on the substrate with a thin film, the above-mentioned reference mark is formed. A resist pattern having 13 patterns is formed (resist pattern forming step). The resist pattern can be formed by a known photolithography method.

  In the method for manufacturing a substrate with a thin film according to the present invention, the reference mark 13 having the same shape is transferred to the same position on a plurality of substrates with a thin film by using one photomask 80 or an imprint plate. be able to. Therefore, a reference mark that can be reliably detected by either an electron beam drawing apparatus or a defect inspection apparatus, and that has a small deviation of the reference point of the defect position determined by scanning of the electron beam and the defect inspection light is provided with a plurality of thin films. It can be formed at a relatively low cost with respect to the attached substrate.

  Next, in the method for manufacturing a substrate with a thin film according to the present invention, at least one layer of the thin film formed on the substrate with the thin film is masked by any of chlorine, bromine, iodine, and xenon using the resist pattern as a mask. A pattern of the reference mark 13 is formed on the thin film by removing it by contact with a non-excited substance containing a compound of the element and fluorine (reference mark forming step). A predetermined non-excited substance comes into contact with a portion of the at least one thin film formed on the substrate with the thin film where a resist pattern mask is not formed, that is, a portion of the shape of the reference mark 13. The thin film in the shape of the reference mark 13 can be removed. As a result, the pattern of the reference mark 13 can be formed on the substrate with a thin film.

Compound of any one of chlorine (Cl), bromine (Br), iodine (I), and xenon (Xe) and fluorine (F) used in the present invention (hereinafter simply referred to as “the compound of the present invention”) Or “predetermined non-excited substance”), for example, ClF ₃ , ClF, BrF ₅ , BrF, IF ₃ , IF ₅ , XeF ₂ , XeF ₄ , XeF ₆ , XeOF ₂ , XeOF ₄ , XeO ₂ F ₂ , XeO ₃ F ₂ , or XeO ₂ F ₄ can be preferably used. Of these, ClF ₃ can be particularly preferably used in the present invention.

In the method for manufacturing a substrate with a thin film of the present invention, the predetermined non-excited substance is preferably ClF ₃ gas. Since the substance to be contacted for removing the thin film is ClF ₃ gas, the thin film can be reliably removed. For example, the absorber film 41 containing Ta such as the TaBN film in the case of the reflective mask blank 40 can be reliably removed with ClF ₃ gas.

  As a method of bringing a thin film such as the reflective mask 60 or the binary mask 70 produced using the reflective mask blank 40 or the binary mask blank 50 into contact with a non-excited substance containing the compound of the present invention, for example, a chamber A method in which a mask blank is installed in 110, a substance containing the compound of the present invention is introduced into the chamber 110 in a gas state, and the inside of the chamber 110 is replaced with the gas is preferably exemplified. As an apparatus for removing the thin film, the processing apparatus shown in FIG. 15 or FIG. 16 can be used.

  In the processing apparatus shown in FIG. 15 or FIG. 16, the gas (the substance containing the compound of the present invention) in the gas filling containers 113 and 114 is introduced into the chamber 110 from the ejection nozzles 115 and 116 via the flow rate controllers 115 and 116. . A predetermined thin film of the processing substrate 111 (substrate with a thin film) disposed on the stage 112 in the chamber 110 is removed by contacting with a substance containing the compound of the present invention in a gas state. Note that the substance in the gas state after the reaction or remaining gas is processed by the exhaust gas processing device 119 via the exhaust pipe 118. By arranging a heater (not shown) in the chamber 110, the processing temperature can be controlled.

  In the method for manufacturing a substrate with a thin film according to the present invention, a plurality of the substrates with a thin film are prepared in the substrate preparing step with the thin film, and a plurality of processing apparatuses as shown in FIG. 16 are used in the reference mark forming step. It is preferable that the pattern of the reference mark 13 is simultaneously formed on the thin film of the substrate with the thin film. A method for manufacturing a transfer mask such as a reflective mask 60 at a lower cost by simultaneously forming a pattern of the reference mark 13 on a plurality of thin films on a substrate with a thin film using a processing apparatus as shown in FIG. Can be obtained. In addition, it is possible to reduce the inter-surface variation in the reference mark formation position between the plurality of thin film-coated substrates.

  In the present invention, when a predetermined non-excited substance (a substance containing the compound of the present invention) is used in a gas state, the predetermined non-excited substance and nitrogen gas, or argon (Ar), helium (He) , Neon (Ne), krypton (Kr), xenon (Xe), radon (Rn) and the like (hereinafter simply referred to as argon (Ar) and the like) can be used. In the present invention, when a substance containing the compound of the present invention is used in a gas state, a mixed gas of the compound of the present invention and argon (Ar) can be preferably used.

  Processing conditions when the thin film formed on the reflective mask blank 40 or the binary mask blank 50 is brought into contact with a non-excited gaseous substance containing the compound of the present invention, for example, gas flow rate, gas pressure, temperature, processing time. There is no particular restriction on the. From the viewpoint of preferably obtaining the action of the present invention, it is desirable to appropriately select these processing conditions depending on the material such as the multilayer reflective film 31 and other thin films and the number of layers (film thickness).

  As for the gas flow rate, for example, when a mixed gas of the compound of the present invention and argon is used, it is preferable that the compound of the present invention is mixed in a flow rate ratio of 1% or more. When the flow rate of the compound of the present invention is less than the above flow rate ratio, the progress of the removal of the thin film is delayed, resulting in a longer treatment time and difficulty in removal.

  In addition, the gas pressure is suitably selected, for example, in the range of 0.1 to 100 kPa, preferably 1 to 50 kPa. When the gas pressure is lower than the above range, the gas amount of the compound of the present invention in the chamber 110 is too small, and the progress of the removal of the thin film becomes slow. As a result, the processing time becomes long and the removal becomes difficult. On the other hand, when the gas pressure is higher than the above range (especially when the pressure is higher than the atmospheric pressure), the gas may flow out of the chamber 110, and the compound of the present invention includes a highly toxic gas. It is not preferable.

  Moreover, it is preferable to select suitably about the temperature of gas, for example in the range of 20-250 degreeC. When the temperature is lower than the above range, the progress of the removal of the thin film is delayed, resulting in a longer processing time and difficult to remove. On the other hand, when the temperature is higher than the above range, the removal proceeds faster and the processing time can be shortened, but it is difficult to obtain selectivity between the thin film to be removed and the remaining thin film or substrate underneath, The remaining thin film and the substrate may be slightly damaged.

  Furthermore, the processing time may be basically sufficient for the thin film to be peeled and removed from the substrate. In the case of the present invention, the processing time for peeling and removing the thin film is somewhat different depending on the gas flow rate, gas pressure, gas temperature, thin film material, and film thickness. Generally, when the processing time is approximately in the range of 5 to 30 minutes, the predetermined thin film can be removed.

  In the case where the predetermined reference mark 13 is formed by contacting and removing the above-described predetermined non-excited substance on the multilayer reflective film 31 of the substrate 30 with the multilayer reflective film, the multilayer reflective film 31 is composed of Mo It is preferable to form a Mo / Si periodic laminated film in which films and Si films are alternately laminated for about 40 periods. In addition, as the multilayer reflection film 31 used in the EUV light region, Ru / Si periodic multilayer film, Mo / Be periodic multilayer film, Mo compound / Si compound periodic multilayer film, Si / Nb periodic multilayer film, Si / Mo / A Ru periodic multilayer film, a Si / Mo / Ru / Mo periodic multilayer film, a Si / Ru / Mo / Ru periodic multilayer film, or the like can be used.

  When the predetermined reference mark 13 is formed by contacting and removing the above-described predetermined non-excited substance with respect to the absorber film 41 of the reflective mask blank 40, the absorber film 41 is exposed with exposure light. For example, a material having a function of absorbing EUV light, for example, tantalum (Ta) alone or a material mainly composed of Ta is preferably used. As a material containing Ta as a main component, a material containing Ta and B, a material containing Ta and N, a material containing Ta and B, and further containing at least one of O and N, Ta and Si A material containing Ta, Si and N, a material containing Ta and Ge, a material containing Ta, Ge and N, a material containing Ta and Hf, and a material containing Ta, Hf and N A material containing Ta, Hf and O, a material containing Ta and Zr, a material containing Ta, Zr and N, a material containing Ta, Zr and O, and the like are used.

  Further, as described above, in order to protect the multilayer reflective film 31, a protective film 32 and a buffer film are usually provided between the multilayer reflective film 31 and the absorber film 41. As a material of the protective film 32, ruthenium other than silicon, or a ruthenium compound containing at least one element of niobium, zirconium, and rhodium in ruthenium is used. A material of the buffer film is mainly the above-described chromium-based material. Material is used.

  According to the present invention, in the case of such a reflective mask blank 40 or a reflective mask 60, the multilayer reflective film 31 and the absorber film 41 laminated thereon (a protective film when the protective film 32 is provided). 32 and the absorber film 41) can be removed together.

In the method for forming the fiducial mark 13 of the present invention, the thin film to be removed is a fluorine-based gas (for example, SF ₆ , CF ₄ , C ₂ F ₆ , CHF _3, etc., or these and He, Ar, N ₂ , C ₂ H _4. , O _2, and the like). When all of the thin film on the glass substrate 11 is removed, the glass substrate 11 is easily etched by a fluorine-based gas plasma that is in an excited state used in dry etching. Has a characteristic that it is difficult to be etched. On the other hand, a material that can be dry-etched with a fluorine-based gas used in a thin film has a characteristic that it is easily etched even with a non-excited fluorine-based compound. That is, a material that can be dry-etched with a fluorine-based gas can easily obtain sufficient etching selectivity with respect to a non-excited fluorine-based compound, and can reduce damage to the glass substrate 11 due to the removal of the thin film. Is particularly easy to obtain.

  Examples of the material that can be dry-etched with this fluorine-based gas include a material containing silicon (Si), a material containing transition metal and silicon (Si), a material containing metal and silicon (Si), and tantalum ( Examples thereof include materials containing Ta).

  When the predetermined reference mark 13 is formed by contacting the above-described predetermined non-excited substance and removing the light shielding film 51 for the mask blank (binary mask blank 50), the above-described fluorine-based gas is used. Examples of materials that can be dry-etched include materials containing silicon (Si), materials containing transition metals and silicon (Si), materials containing metals and silicon (Si), and tantalum (Ta). Examples thereof include materials. As a mask blank using such a material, for example, a binary mask blank 50 including a light shielding film 51 formed of a material containing a transition metal and silicon (Si), or a material containing tantalum (Ta) is used. Binary mask blank 50 having a light-shielding film 51, a phase shift mask blank having a phase shift film formed of a material containing silicon (Si) or a material containing a transition metal and silicon (Si) Etc.

  As the material containing silicon (Si), a material further containing at least one element of nitrogen, oxygen, and carbon, specifically, a silicon nitride, an oxide, a carbide, an oxynitride, A material containing a carbonate or carbonitride is preferred.

  The material containing the transition metal and silicon (Si) includes, in addition to the material containing the transition metal and silicon, the transition metal and silicon, and at least one element of nitrogen, oxygen, and carbon. Materials. Specifically, a transition metal silicide or a material containing a transition metal silicide nitride, oxide, carbide, oxynitride, carbonate, or carbonitride is preferable. As the transition metal, molybdenum, tantalum, tungsten, titanium, chromium, hafnium, nickel, vanadium, zirconium, ruthenium, rhodium, niobium, yttrium, lanthanum, palladium, iron, and the like are applicable. Of these, molybdenum is particularly preferred.

  Moreover, as the material containing the metal and silicon (Si), in addition to the material containing metal and silicon, a material containing at least one element of nitrogen, oxygen, and carbon in addition to the metal and silicon. Can be mentioned. The material containing metal and silicon (Si) includes the material containing the transition metal and silicon (Si). As the metal, germanium, gallium, aluminum, indium, tin, and the like can be applied in addition to the transition metal.

  The tantalum (Ta) -containing material includes, in addition to tantalum alone, a compound of tantalum and other metal elements (for example, Hf, Zr, etc.), tantalum, nitrogen, oxygen, carbon and boron. A material containing at least one element, specifically, a material containing TaN, TaO, TaC, TaB, TaON, TaCN, TaBN, TaCO, TaBO, TaBC, TaCON, TaBON, TaBCN, TaBCON, or the like.

  After forming the reference mark 13 on the substrate with a thin film as described above, the resist pattern having the pattern of the reference mark 13 is peeled off to obtain the substrate with a thin film of the present invention. The resist pattern can be peeled by a known method. As described above, the substrate with a thin film of the present invention can be manufactured.

[Transfer mask]
The present invention is a method for manufacturing a transfer mask, characterized in that a reflective mask 60 is manufactured by patterning an absorber film 41 using a substrate with a thin film obtained by the method for manufacturing a substrate with a thin film described above. is there. FIG. 8 shows a reflective mask 60 including an absorber film 41 pattern 41a in which the absorber film 41 in the reflective mask blank 40 of FIG. 6 is patterned.

  FIG. 9 shows a binary mask 70 including a light shielding film 51 pattern 51a obtained by patterning the light shielding film 51 in the binary mask blank 50 of FIG.

  As a method for patterning a thin film such as the absorber film 41 or the light shielding film 51 and the antireflection film, which is a transfer pattern in a mask blank, a photolithography method is most preferable. Although not shown in the drawing, a thin film to be a transfer pattern is also patterned in the phase shift type mask blank having a structure including the phase shift film or the phase shift film and the light shielding film 51 on the mask blank glass substrate 11 described above. By doing so, a phase shift mask is obtained.

  Hereinafter, the embodiment of the present invention will be described more specifically with reference to examples.

Example 1
Using a double-side polishing apparatus, a SiO ₂ —TiO ₂ -based glass substrate 11 (size is 152 mm ×) which is stepwise polished with cerium oxide abrasive grains or colloidal silica abrasive grains and surface-treated with a low concentration of silicic acid. 152 mm and thickness 6.35 mm). The surface roughness of the obtained glass substrate 11 was 0.25 nm in terms of root mean square roughness (RMS) (measured with an atomic force microscope. The measurement area was 1 μm × 1 μm.).

  As a result of measuring the surface shape (surface form, flatness) of the front and back surfaces of this glass substrate 11 with a flatness measuring device (UltraFlat manufactured by Tropel) (measurement area 148 mm × 148 mm), the flatness of the front and back surfaces of the glass substrate 11 Was about 290 nm.

  Next, local surface processing was performed on the surface of the glass substrate 11 to adjust the surface shape. When the surface shape (surface morphology, flatness) and surface roughness of the surface of the obtained glass substrate 11 were measured, the flatness of both the front and back surfaces was 80 nm, which was 100 nm or less, in a 142 mm × 142 mm measurement region. Met.

  Next, a B-doped Si target is used, a mixed gas of Ar gas and He gas is used as a sputtering gas, a 100 nm Si underlayer 21 is formed by DC magnetron sputtering, and thermal energy is then applied to the Si film. The stress reduction process was performed by giving.

  Thereafter, precision polishing using a single-side polishing apparatus was performed on the surface of the Si underlayer 21 in order to maintain the surface shape and reduce the surface roughness. When the surface shape (surface morphology, flatness) and surface roughness of the surface of the obtained Si underlayer 21 were measured, the measurement area of 142 mm × 142 mm was 80 nm and 100 nm or less. Moreover, the surface roughness was 0.08 nm in terms of root mean square roughness RMS in a measurement area of 1 μm × 1 μm, which was very good. Since RMS has an extremely high smoothness of 0.1 nm or less, background noise in a high-sensitivity defect inspection apparatus is reduced, and it is effective in terms of suppressing detection of pseudo defects. Further, the maximum surface roughness (Rmax) was 0.60 nm and Rmax / RMS was 7.5 in the measurement region of 1 μm × 1 μm, and the variation in surface roughness was small and good.

  Next, an Si film (film thickness: 4.2 nm) and a Mo film (film thickness: 2.8 nm) are stacked for 40 periods on the Si underlayer 21 using an ion beam sputtering apparatus. A multilayer reflective film 31 (total film thickness 280 nm) was formed to obtain a substrate 30 with a multilayer reflective film.

  Next, a photomask (binary mask 70) in which the pattern of the reference mark 13 was formed on the periphery of the substrate was prepared. In this embodiment, as the reference mark 13, the main mark 13a and the auxiliary marks 13b and 13c described above are formed so as to have an arrangement relationship as shown in FIG. The main mark 13a is a rectangle having a size of 5 μm × 5 μm. The auxiliary marks 13b and 13c are both rectangular with a size of 1 μm × 200 μm.

  Next, the reference mark 13 having a concave cross-sectional shape was formed at a predetermined position on the surface of the plurality of multilayer reflective films 31 by a lithography method using a photomask in which the pattern of the reference mark 13 was formed. Specifically, first, a positive photoresist film was formed on the surface of the multilayer reflective film 31 of the plurality of substrates 30 with multilayer reflective films. The pattern of the reference mark 13 of the above-mentioned photomask was transferred to this photoresist film by equal magnification exposure. Thereafter, the photoresist film was developed and rinsed to remove a portion corresponding to the reference mark 13 in the photoresist film on the multilayer reflective film 31. In this manner, a plurality of substrates 30 with a multilayer reflective film in which the resist pattern of the reference mark 13 was formed on the multilayer reflective film 31 were obtained.

Next, the reference mark 13 was formed by removing a predetermined portion of the multilayer reflective film 31 of the plurality of (specifically, 14) multilayer reflective film-coated substrates 30. Specifically, 14 substrates 30 with a multilayer reflective film were placed in a chamber 110 (accommodating 14 sheets) as schematically shown in FIG. Next, a mixed gas of ClF ₃ and N ₂ (flow ratio ClF ₃ : N ₂ = 0.2: 20 SLM (Standard Liter per Minute)) is introduced into the chamber 110 and the chamber 110 is filled with the gas. By replacing, the portion corresponding to the reference mark 13 in the multilayer reflective film 31 of the substrate with multilayer reflective film 30 was removed by etching so as to contact the mixed gas in the non-excited state. At this time, the gas pressure was adjusted to 2 kPa, the temperature was adjusted to 180 ° C., and the treatment time was 30 minutes. As a result, all of the multilayer reflective film 31 corresponding to the reference mark 13 was removed. Therefore, the depth of the formed reference mark 13 was about 280 nm because all the layers constituting the multilayer reflective film 31 were removed.

  Next, the photoresist film was stripped with a resist stripper and rinsed. As a result, the 14 board | substrates 30 with a multilayer reflective film in which the reference mark 13 was formed in the outer peripheral part of the multilayer reflective film 31 were obtained.

  When the surface of the substrate from which the portion corresponding to the reference mark 13 was removed from the EUV multilayer reflective film 31 composed of the alternately laminated film of the Mo film and the Si film in this way was observed with an electron microscope, the multilayer reflective film 31 was observed. Generation | occurrence | production of the residue of the multilayer reflecting film 31 and generation | occurrence | production of altered layers, such as white turbidity, was not confirmed in the part which removed.

  When the cross-sectional shape of the fiducial mark 13 was observed with an atomic force microscope (AFM), the inclination angle of the side wall was 82 degrees, and the curvature radius of the ridge line portion between the surface of the multilayer reflective film 31 and the side wall was about 30 nm and the cross section was good. It was a shape.

  The relative positional accuracy of the reference mark 13 in the plurality of substrates 30 with the multilayer reflective film manufactured as described above was good.

  Next, a defect inspection was performed on the surface of the multilayer reflective film 31 of the plurality of substrates 30 with the multilayer reflective film of Example 1 using a blanks defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor). In this defect inspection, a reference point is determined on the basis of the above-described reference mark 13, and convex and concave defect position information and defect size information based on the relative position with the determined reference point are acquired, and a defect map is created. did. The board | substrate 30 with a multilayer reflective film with the defect information (defect map) which matched the board | substrate 30 with a multilayer reflective film, and these defect position information and defect size information was obtained. When the reflectance of the surface of the multilayer reflective film 31 of the substrate 30 with the multilayer reflective film was evaluated by an EUV reflectometer, the surface roughness variation of the underlayer 21 was suppressed, and it was favorable as 67% ± 0.2%. Met.

  Next, using a DC magnetron sputtering apparatus, a protective film 32 (film thickness: 2.5 nm) made of Ru, a TaBN film (film thickness: 56 nm) that is an absorption layer, and a low reflection layer are formed on the multilayer reflective film 31. An absorber film 41 made of a laminated film of a certain TaBO film (film thickness: 14 nm) is formed, and a CrN conductive film (film thickness: 20 nm) is formed on the back surface. The EUV reflective mask blank of Example 1 40 was obtained.

  About the obtained EUV reflective mask blank 40, defect inspection was performed with a blanks defect inspection apparatus (Teron600 series manufactured by KLA-Tencor). Similarly to the above, using the above-described reference mark 13 as a reference, convex and concave defect position information and defect size information are acquired, and the EUV reflective mask blank 40 is associated with these defect position information and defect size information. An EUV reflective mask blank 40 with defect information was obtained.

  Next, an EUV reflective mask 60 was produced using the EUV reflective mask blank 40 with defect information.

  First, a resist for forming an electron beam was applied on the EUV reflective mask blank 40 by a spin coating method and baked to form a resist film.

  Next, based on the defect information of the EUV reflective mask blank 40, it is compared with the mask pattern data designed in advance, and corrected to the mask pattern data that does not affect the pattern transfer using the exposure apparatus, or the pattern transfer For example, if a defect cannot be dealt with even if the correction pattern data is corrected by correcting the mask pattern data with correction pattern data so as to hide the defect under the pattern, The mask pattern data was corrected to reduce the load of defect correction, and on the basis of the corrected mask pattern data, a mask pattern was drawn and developed with the electron beam on the above resist film to form a resist pattern. In this embodiment, since the relative positional relationship between the reference mark 13 and the defect can be managed with high accuracy, the mask pattern data can be corrected with high accuracy.

Using this resist pattern as a mask, the TaBO film in the absorber film 41 is removed by etching with a fluorine-based gas (CF ₄ gas), and the TaBN film is removed by etching with a chlorine-based gas (Cl ₂ gas). The absorber film pattern 41a was formed.

  Further, the resist pattern remaining on the absorber film pattern 41a was removed with hot sulfuric acid to obtain an EUV reflective mask 60.

  When the obtained EUV reflective mask 60 was inspected by a mask defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor), no convex defect was confirmed on the multilayer reflective film 31.

  When the reflective mask 60 obtained in this way is set in an exposure apparatus and pattern transfer is performed on a semiconductor substrate on which a resist film is formed, there is no defect in the transfer pattern caused by the reflective mask 60 and good pattern transfer is performed. It can be carried out.

(Example 2)
A plurality of reflective mask blanks 40 were produced in the same manner as in Example 1 except that the reference mark 13 in Example 1 was not formed on the multilayer reflective film 31 but was formed on the absorber film 41.

  Specifically, in Example 2, the multilayer reflective film-coated substrate 30 was manufactured in the same manner as in Example 1. Thereafter, the reference mark 13 is not formed on the multilayer reflective film 31, and a protective film 32 (film thickness: 2.5 nm) made of Ru is formed on the multilayer reflective film 31 and an absorption layer in the same manner as in the first embodiment. An absorber film 41 made of a laminated film of a certain TaBN film (film thickness: 56 nm) and a TaBO film (film thickness: 14 nm) as a low reflection layer was formed.

  Next, in the same manner as in Example 1, a reference having a concave cross-sectional shape at a predetermined position on the surface of the plurality of absorber films 41 by a lithography method using a photomask in which a pattern of the reference mark 13 is formed. A mark 13 was formed. Specifically, first, a positive photoresist film was formed on the surface of the absorber film 41 of the plurality of substrates 30 with multilayer reflective films. The pattern of the reference mark 13 of the above-mentioned photomask was transferred to this photoresist film by equal magnification exposure. Thereafter, the photoresist film was developed and rinsed to remove a portion corresponding to the reference mark 13 in the photoresist film on the absorber film 41. In this way, a plurality of multilayer reflective film-coated substrates 30 in which the resist pattern of the reference mark 13 was formed on the absorber film 41 were obtained.

Next, the reference mark 13 was formed on the absorber film 41 of a plurality of (specifically, 14) multilayer reflective film-coated substrates 30. Specifically, 14 substrates 30 with a multilayer reflective film were placed in a chamber 110 as shown in FIG. Next, a mixed gas of ClF ₃ and N ₂ (flow ratio ClF ₃ : N ₂ = 0.2: 20 SLM (Standard Liter per Minute)) is introduced into the chamber 110 and the chamber 110 is filled with the gas. By replacing, the portion corresponding to the reference mark 13 in the absorber film 41 of the multilayer reflective film-coated substrate 30 was removed by etching so as to be in contact with the non-excited mixed gas. The gas pressure at this time was adjusted to 20 kPa, the temperature was adjusted to 160 ° C., and the treatment time was 20 minutes. As a result, all of the absorber film 41 corresponding to the reference mark 13 was removed. Therefore, the depth of the formed reference mark 13 was about 70 nm because all the layers constituting the absorber film 41 were removed.

  In addition, a CrN conductive film (film thickness: 20 nm) was formed on the back surface to obtain an EUV reflective mask blank 40.

  When the cross-sectional shape of the fiducial mark 13 was observed with an atomic force microscope (AFM), as in Example 1, the inclination angle of the side wall was 87 degrees, and the radius of curvature of the ridge line portion between the side wall of the absorber film 41 surface was the same. The cross-sectional shape was as good as about 30 nm.

  The relative positional accuracy of the reference mark 13 in the plurality of substrates 30 with the multilayer reflective film manufactured as described above was good.

  In this example, the surface of the multilayer reflective film 31 of the multilayer reflective film-coated substrate 30 in which the multilayer reflective film 31 is formed on the substrate is measured with a blanks defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor) on the main surface of the substrate. Defect inspection was performed based on the center. Further, for the reflective mask blank 40 on which the absorber film 41 was formed, convex and concave defect position information and defect size information were acquired using the blank defect inspection apparatus similar to that described above with reference to the reference mark 13. . Finally, in the defect information of the multilayer reflective film-coated substrate 30 and the defect information of the reflective mask blank 40, the reflective mask blank 40 and these defect positions are collated based on a plurality of defects that match. The EUV reflective mask blank 40 with defect information corresponding to the information and the defect size information was obtained.

  Next, in the same manner as in Example 1, an EUV reflective mask 60 was produced. When the obtained EUV reflective mask 60 was inspected by a mask defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor), no convex defect was confirmed on the multilayer reflective film 31.

  When the reflective mask 60 obtained in this way is set in an exposure apparatus and pattern transfer is performed on a semiconductor substrate on which a resist film is formed, there is no defect in the transfer pattern caused by the reflective mask 60 and good pattern transfer is performed. It can be carried out.

(Comparative Example 1)
A reflective mask blank 40 of Comparative Example 1 was produced in the same manner as in Example 1 except that the fiducial mark 13 in Example 1 was formed on a resist film using an electron beam drawing apparatus.

  Specifically, first, similarly to Example 1, a plurality of substrates 30 with a multilayer reflective film were manufactured, and a resist film was formed on the surface of the multilayer reflective film 31. A pattern of the reference mark 13 (see FIG. 2) having the same shape as the photomask used in Example 1 was drawn on this photoresist film using an electron beam drawing apparatus. Thereafter, by developing and rinsing the resist film, a portion corresponding to the reference mark 13 in the resist film on the multilayer reflective film 31 was removed. In this manner, a plurality of substrates 30 with a multilayer reflective film in which the resist pattern of the reference mark 13 was formed on the multilayer reflective film 31 were obtained.

Next, a portion corresponding to the reference mark 13 in the multilayer reflective film 31 of the plurality of multilayer reflective film-coated substrates 30 is brought into contact with a non-excited mixed gas of ClF ₃ and N _{2 under} the same conditions as in the first embodiment. Etching was removed. Next, the photoresist film was stripped with a resist stripper and rinsed. As a result, a plurality of multilayer reflective film-coated substrates 30 of Comparative Example 1 in which the reference mark 13 was formed on the outer peripheral portion of the multilayer reflective film 31 were obtained.

  Next, similarly to Example 1, the surface of the multilayer reflective film 31 of the plurality of multilayer reflective film-coated substrates 30 of Comparative Example 1 was subjected to defect inspection using a blanks defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor). In this defect inspection, a reference point is determined on the basis of the above-described reference mark 13, and convex and concave defect position information and defect size information based on the relative position with the determined reference point are acquired, and a defect map is created. did. The board | substrate 30 with a multilayer reflective film with the defect information (defect map) which matched the board | substrate 30 with a multilayer reflective film, and these defect position information and defect size information was obtained.

  Next, similarly to Example 1, using a DC magnetron sputtering apparatus, a protective film 32 made of Ru (film thickness: 2.5 nm) and a TaBN film (film thickness: 56 nm) and an absorber film 41 made of a laminated film of a TaBO film (film thickness: 14 nm) which is a low reflection layer, and a CrN conductive film (film thickness: 20 nm) is formed on the back surface. 1 EUV reflective mask blank 40 was obtained.

  About the obtained EUV reflective mask blank 40, defect inspection was performed with a blanks defect inspection apparatus (Teron600 series manufactured by KLA-Tencor). Similar to the above, convex and concave defect position information and defect size information are acquired using the above-described reference mark 13 as a reference, and the EUV reflective mask blank 40 is associated with these defect position information and defect size information. The EUV reflective mask blank 40 with defect information was obtained.

  Next, an EUV reflective mask 60 was produced using the EUV reflective mask blank 40 with defect information.

  First, a resist for forming an electron beam was applied on the EUV reflective mask blank 40 by a spin coating method and baked to form a resist film.

  Next, based on the defect information of the EUV reflective mask blank 40, it is compared with the mask pattern data designed in advance, and corrected to the mask pattern data that does not affect the pattern transfer using the exposure apparatus, or the pattern transfer For example, if a defect cannot be dealt with even if the correction pattern data is corrected by correcting the mask pattern data with correction pattern data so as to hide the defect under the pattern, The mask pattern data is corrected to reduce the load of defect correction, and based on the corrected mask pattern data, the mask pattern is drawn and developed with the electron beam on the above resist film to form a resist pattern. Tried. However, in Comparative Example 1, compared to Example 1, the relative positional relationship between the reference mark 13 and the defect could not be managed with high accuracy, so that the mask pattern data could not be corrected with high accuracy. .

Using this resist pattern as a mask, the TaBO film in the absorber film 41 is removed by etching with a fluorine-based gas (CF ₄ gas), and the TaBN film is removed by etching with a chlorine-based gas (Cl ₂ gas). The absorber film pattern 41a was formed.

  Further, the resist pattern remaining on the absorber film pattern 41a was removed with hot sulfuric acid to obtain an EUV reflective mask 60.

  When the obtained EUV reflective mask 60 was inspected with a mask defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor), convex defects were confirmed on the multilayer reflective film 31.

  When the reflection type mask 60 obtained in this way is set in an exposure apparatus and pattern transfer is performed on a semiconductor substrate on which a resist film is formed, there is a transfer pattern defect caused by the reflection type mask 60, and good pattern transfer is performed. I can't do it.

  In the case of Comparative Example 1, the resist pattern formation drawing time for forming the reference mark is about 30 to 60 minutes / sheet, whereas the resist for forming the reference mark using the photomask of Example 1 is used. Since the pattern formation is about 1 to 2 minutes / sheet and the manufacturing time can be greatly shortened, a low-cost reflective mask blank and a reflective mask can be obtained by the manufacturing method of the present invention.

In the above-described embodiment, when forming the fiducial mark 13, a mixed gas of ClF ₃ and N ₂ is simultaneously used for the fourteen multilayer reflective film-coated substrates 30 in the chamber 110 as shown in FIG. However, the present invention is not limited to this. For example, using the etching chamber 110 as shown in FIG. 15, it is also possible to process the substrates 30 with multilayer reflective films one by one.

11 Glass substrate 12 Rough alignment mark 13 Reference mark (fine mark)
13a Main mark 13b, 13c Auxiliary mark 21 Underlayer 30 Substrate with multilayer reflective film 31 Multilayer reflective film 32 Protective film 40 Reflective mask blank 41 Absorber film 41a Absorber film pattern 50 Binary mask blank 51 Light shielding film 60 Reflective mask 70 Binary mask 80 Photomask 110 Chamber 111 Processing substrate 112 Stage 113, 114 Gas filling container 115, 116 Flow rate controller 117 Ejection nozzle 118 Exhaust pipe 119 Exhaust gas processing device

Claims (9)

A method for manufacturing a substrate with a thin film, wherein the substrate with a thin film is a substrate with a multilayer reflective film for manufacturing a reflective mask that uses EUV light as exposure light,
Manufacturing method is
A photomask or imprint plate on which three or more reference mark patterns that are not placed on the same virtual straight line are formed, and a plurality of thin film-attached substrates that are transferred bodies to which the reference mark patterns are transferred. A substrate preparation process with a thin film;
A resist film forming step of forming a resist film on the plurality of thin film-coated substrates;
A resist that forms a resist pattern having the reference mark pattern by transferring the reference mark pattern formed on the photomask or the imprint plate to the resist film of the plurality of thin film-coated substrates. A pattern forming process;
Arranging the plurality of thin film-attached substrates on a plurality of stages in a chamber in a processing apparatus for removing the thin film;
In the chamber, at least one thin film formed on the plurality of thin film-attached substrates using the resist pattern as a mask, and a compound of any one element of chlorine, bromine, iodine, and xenon with fluorine and the reference mark forming step by removing by contacting the gas containing a substance of non-excited state, to form the reference mark pattern at the same time for the thin film of the plurality of thin-film substrate comprising,
And a resist pattern peeling step for peeling the resist pattern. 2. The method for manufacturing a substrate with a thin film according to claim 1, wherein in the reference mark forming step, the pressure of the gas in the chamber is 0.1 to 100 kPa, and the temperature of the gas is 20 to 250 ° C. 3. . The method for manufacturing a substrate with a thin film according to claim 1, wherein the substance is ClF ₃ gas.   The substrate with a thin film has a multilayer reflection film in which a multilayer reflection film in which a high refractive index layer made of a high refractive index material and a low refractive index layer made of a low refractive index material are alternately laminated is formed on the main surface of the substrate. 4. The method for manufacturing a substrate with a thin film according to claim 1, wherein the substrate has a film, and the high refractive index material and the low refractive index material are materials that can be removed by the substance.   5. The method of manufacturing a substrate with a thin film according to claim 4, wherein the high refractive index material is silicon and the low refractive index material is molybdenum.   6. The method for manufacturing a substrate with a thin film according to claim 4, wherein a protective film is formed on the multilayer reflective film.   The substrate with a thin film is a reflective mask blank in which an absorber film made of a material removable by the substance is formed on a side of the substrate with a multilayer reflective film on which the multilayer reflective film is formed. The manufacturing method of the board | substrate with a thin film in any one of Claim 4 thru | or 6.   8. The method for manufacturing a substrate with a thin film according to claim 7, wherein the absorber film is made of a material containing Ta.   9. A transfer mask comprising: a substrate having a thin film obtained by the method for producing a substrate with a thin film according to claim 7 or 8; and patterning the absorber film to produce a reflective mask. Production method.