JP6110136B2 - Wafer laser processing method and laser processing apparatus - Google Patents

Description

  The present invention divides a wafer in which devices are formed into a plurality of regions partitioned by streets formed in a lattice shape on the surface into individual devices along the streets, and die bonding that is mounted on the back surface of each device The present invention relates to a wafer laser processing method and a laser processing apparatus capable of confirming whether an adhesive film for use is broken along the outer periphery of a device.

  For example, in a semiconductor device manufacturing process, devices such as IC and LSI are formed in a plurality of regions partitioned by division lines (streets) formed in a lattice shape on the surface of a semiconductor wafer having a substantially disk shape, Individual semiconductor devices are manufactured by dividing each region in which the devices are formed along the streets. A dicing apparatus is generally used as a dividing apparatus for dividing a semiconductor wafer, and the dicing apparatus cuts the semiconductor wafer along the street with a cutting blade having a thickness of about 20 μm. The semiconductor devices divided in this way are packaged and widely used in electric devices such as mobile phones and personal computers.

  Individually divided semiconductor devices have an adhesive film for die bonding called a die attach film (DAF) with a thickness of 20 to 40 μm formed of polyimide resin, epoxy resin, acrylic resin fat, etc. on the back surface thereof. It is mounted and bonded by heating to a die bonding frame that supports the semiconductor device through this adhesive film. As a method of attaching the adhesive film for die bonding to the back surface of the semiconductor device, the adhesive film is attached to the back surface of the semiconductor wafer, the semiconductor wafer is attached to the dicing tape through the adhesive film, and then the semiconductor wafer By cutting along with the adhesive film with a cutting blade along the street formed on the front surface, a semiconductor device having the adhesive film mounted on the back surface is formed. (For example, refer to Patent Document 1.)

  However, according to the method disclosed in Japanese Patent Application Laid-Open No. 2000-182959, when the adhesive film is cut together with the semiconductor wafer by the cutting blade and divided into individual semiconductor devices, the back surface of the semiconductor device is chipped or bonded. There is a problem in that wrinkle-like burrs are generated in the film and cause breakage during wire bonding.

  In recent years, electric devices such as mobile phones and personal computers are required to be lighter and smaller, and thinner semiconductor devices are required. As a technique for dividing a semiconductor device thinner, a dividing technique called a so-called first dicing method has been put into practical use. In this tip dicing method, a cutting groove having a predetermined depth (a depth corresponding to the finished thickness of the semiconductor device) is formed along the street from the surface of the semiconductor wafer, and then the semiconductor wafer having the cutting groove formed on the surface is formed. In this technique, the back surface of the semiconductor device is ground and a cutting groove is exposed on the back surface to divide the semiconductor device into individual semiconductor devices. The thickness of the semiconductor device can be reduced to 50 μm or less.

  However, when the semiconductor wafer is divided into individual semiconductor devices by the pre-dicing method, a back surface of the semiconductor wafer is ground by forming a cutting groove having a predetermined depth along the street from the surface of the semiconductor wafer. Therefore, the die bonding adhesive film cannot be mounted on the back surface of the semiconductor wafer in advance. Therefore, when bonding to the die bonding frame that supports the semiconductor device by the first dicing method, the bonding agent must be inserted between the semiconductor device and the die bonding frame, and the bonding operation is performed smoothly. There is a problem that can not be.

  In order to solve such problems, an adhesive film for die bonding is attached to the back surface of the wafer divided into individual semiconductor devices by the prior dicing method, and the semiconductor device is attached to the dicing tape via the adhesive film. After that, the portion of the adhesive film exposed in the gap between the semiconductor devices is irradiated with a laser beam through the gap from the surface side of the semiconductor device, and the portion of the adhesive film exposed in the gap is removed. A method for manufacturing a semiconductor device has been proposed. (For example, see Patent Document 2.)

JP 2000-182959 A JP 2002-118081 A

  Thus, in the processing method described in Patent Document 2, if the gap between the semiconductor devices is insufficient or the semiconductor device protrudes toward the dividing groove, the laser beam is partially blocked by the semiconductor device. And the adhesive film is not cut. For this reason, when picking up a semiconductor device from a dicing tape, there is a problem that a portion where the semiconductor device cannot be picked up together with the adhesive film is generated, and the pick-up process cannot be performed smoothly.

  The present invention has been made in view of the above facts, and its main technical problem is to confirm whether the die bonding adhesive film attached to the back surface of the device is broken along the outer periphery of the device. An object of the present invention is to provide a laser processing method and a laser processing apparatus for a wafer.

In order to solve the above main technical problem, according to the present invention, a wafer in which devices are formed in a plurality of regions partitioned by a plurality of streets formed in a lattice shape on the surface is divided into individual devices along the streets. And a wafer processing method in which an adhesive film is attached to the back of each device,
A split groove forming step of forming a split groove having a depth corresponding to the finished thickness of the device along the street from the surface side of the wafer;
A protective member attaching step for attaching a protective member to the surface of the wafer on which the divided groove forming step has been performed;
A wafer dividing step of grinding the back surface of the wafer on which the protective member attaching step has been performed to expose the dividing grooves on the back surface, and dividing the wafer into individual devices;
A protective film that is attached to the front surface of the wafer by attaching an adhesive film to the back surface of the wafer that has undergone the wafer splitting process, attaching a dicing tape to the adhesive film side, and supporting the outer periphery of the dicing tape with an annular frame. A wafer support step for peeling the member;
By holding the wafer-attached dicing tape side to the workpiece holding means of the laser processing apparatus and irradiating the adhesive film with a laser beam through the dividing groove from the wafer surface side. An adhesive film dividing step of dividing the adhesive film along the dividing groove,
The adhesive film dividing step detects the plasma light emitted when the laser beam is irradiated, and records the coordinate value when detecting the plasma light emitted when the device is irradiated with the laser beam.
A method for processing a wafer is provided.

In addition, according to the present invention, devices formed in a plurality of regions partitioned by a plurality of streets formed in a lattice shape on the front surface are divided into individual devices by dividing grooves along the streets, and the die is formed on the back side. A workpiece holding means for holding a wafer on which an adhesive film for bonding is mounted, and a laser beam to the adhesive film along the dividing groove from the surface side of the wafer held by the workpiece holding means. A laser beam irradiating means for irradiating; a workpiece holding means; a process feeding means for relatively moving the laser beam irradiating means in a processing feed direction (X-axis direction); Index feed means for relatively moving in the index feed direction (Y-axis direction) orthogonal to the work feed direction (X-axis direction), and the workpiece holding hand X-axis and the X-axis direction position detecting means for detecting the direction position,該被the Y-axis direction position detecting means for detecting the Y-axis direction position of the workpiece holding means, the wafer held on the workpiece holding means In the laser processing apparatus having an imaging means for imaging the division groove to be processed,
Plasma detection for detecting plasma light generated by irradiating the wafer with the laser beam when the adhesive film is irradiated with the laser beam along the divided grooves of the wafer held by the workpiece holding means Means and control means,
The control means records a coordinate value generated by the plasma light detected by the plasma detection means based on detection signals from the plasma detection means, the X-axis direction position detection means, and the Y-axis direction position detection means. And a detection signal from the X-axis direction position detection means and the Y-axis direction position detection means when the plasma detection means detects plasma light generated by irradiating the wafer with the laser beam. The coordinate value at which the plasma light is generated is obtained based on the above, and the coordinate value at which the plasma light is generated is recorded in the memory as a defective processing coordinate value .
A laser processing apparatus is provided.

In the wafer processing method according to the present invention, the adhesive film is divided along the divided grooves by irradiating the adhesive film with laser beams through the divided grooves from the surface side of the wafer divided into individual devices by the so-called first dicing method. The adhesive film splitting process detects the plasma light emitted when irradiating the laser beam, and records the coordinate value when detecting the plasma light emitted by irradiating the device with the laser beam. By utilizing the coordinate value of the part where the adhesive film is not cut in the next pickup process, it is possible to solve the problem that the device cannot be picked up together with the adhesive film.
Moreover, based on the coordinate value of the part where the adhesive film is not cut as the processing defect information, it is possible to inspect the cause of the processing defect by imaging the device in the processing defect area.

Further, the laser processing apparatus according to the present invention provides a plasma generated by irradiating the wafer with the laser beam when the adhesive film is irradiated with the laser beam along the divided grooves of the wafer held by the workpiece holding means. Plasma detection means for detecting light, and control means, the control means is detected by the plasma detection means based on detection signals from the plasma detection means, X-axis direction position detection means and Y-axis direction position detection means A memory for recording the coordinate value generated by the generated plasma light, and when the plasma detecting means detects the plasma light generated by irradiating the wafer with the laser beam , the X-axis direction position detecting means and Y Based on the detection signal from the axial position detection means, the coordinate value where the plasma light is generated is obtained, and the plasma light is generated. And since the recorded coordinates in the memory as the processing defect coordinates, the processing information recorded in the memory by using in the next step, it is possible to smoothly perform the next step.

The perspective view which shows the semiconductor wafer processed by the processing method of the wafer by this invention. Explanatory drawing of the division | segmentation groove | channel formation process in the processing method of the wafer by this invention. Explanatory drawing of the protection member sticking process in the processing method of the wafer by this invention. Explanatory drawing of the wafer division | segmentation process in the processing method of the wafer by this invention. Explanatory drawing of the wafer support process in the processing method of the wafer by this invention. Explanatory drawing which shows 2nd Embodiment of the wafer support process in the processing method of the wafer by this invention. The perspective view of the laser processing apparatus comprised according to this invention. The block block diagram of the laser beam irradiation means and plasma detection means with which the laser processing apparatus shown in FIG. 7 is equipped. FIG. 8 is a block diagram showing the configuration of control means provided in the laser processing apparatus shown in FIG. 7. Explanatory drawing which shows the coordinate value of the state with which the wafer by which the wafer support process was implemented was hold | maintained at the chuck table with which the laser processing apparatus shown in FIG. 7 is equipped. Explanatory drawing of the film division | segmentation process in the processing method of the wafer by this invention.

  Preferred embodiments of a wafer laser processing method and laser processing apparatus according to the present invention will be described below in more detail with reference to the accompanying drawings.

  FIG. 1 is a perspective view of a semiconductor wafer as a wafer. The semiconductor wafer 2 shown in FIG. 1 is made of, for example, a silicon wafer having a thickness of 600 μm, and a plurality of streets 21 are formed in a lattice shape on the surface 2a. On the surface 2 a of the semiconductor wafer 2, devices 22 such as IC and LSI are formed in a plurality of regions partitioned by a plurality of streets 21 formed in a lattice shape. A procedure for dividing the semiconductor wafer 2 into individual semiconductor devices by the prior dicing method will be described.

  In order to divide the semiconductor wafer 2 into individual semiconductor devices by the dicing method, first, a predetermined depth (a depth corresponding to the finished thickness of each device) along the street 21 formed on the surface 2a of the semiconductor wafer 2 is obtained. Are formed (divided groove forming step). In the illustrated embodiment, this dividing groove forming step is performed using a cutting device 3 shown in FIG. The cutting device 3 shown in FIG. 2A is held by the chuck table 31 that holds the workpiece, the cutting means 32 that cuts the workpiece held by the chuck table 31, and the chuck table 31. An image pickup means 33 for picking up an image of the workpiece is provided. The chuck table 31 is configured to suck and hold a workpiece, and is moved in a cutting feed direction indicated by an arrow X in FIG. 2A by an unillustrated cutting feed mechanism, and an unillustrated indexing feed mechanism. Can be moved in the index feed direction indicated by the arrow Y.

  The cutting means 32 includes a spindle housing 321 arranged substantially horizontally, a rotary spindle 322 rotatably supported by the spindle housing 321, and a cutting blade 323 mounted on the tip of the rotary spindle 322. The rotary spindle 322 is rotated in the direction indicated by the arrow 322a by a servo motor (not shown) disposed in the spindle housing 321. The thickness of the cutting blade 323 is set to 30 μm in the illustrated embodiment. The imaging means 33 is attached to the tip of the spindle housing 321 and illuminates the workpiece, an optical system that captures an area illuminated by the illumination means, and an image captured by the optical system. An image pickup device (CCD) or the like for picking up images is provided, and the picked-up image signal is sent to a control means (not shown).

  In order to perform the dividing groove forming process using the cutting device 3 described above, the back surface 2b side of the semiconductor wafer 2 is placed on the chuck table 31 as shown in FIG. By operating, the semiconductor wafer 2 is held on the chuck table 31. Therefore, the surface 2a of the semiconductor wafer 2 held on the chuck table 31 is on the upper side. In this way, the chuck table 31 that sucks and holds the semiconductor wafer 2 is positioned directly below the imaging means 33 by a cutting feed mechanism (not shown).

  When the chuck table 31 is positioned immediately below the image pickup means 33, an alignment operation for detecting a cutting region in which the division grooves are to be formed along the streets 21 of the semiconductor wafer 2 is executed by the image pickup means 33 and a control means (not shown). That is, the imaging unit 33 and a control unit (not shown) execute image processing such as pattern matching for aligning the street 21 formed in a predetermined direction of the semiconductor wafer 2 and the cutting blade 323, and cutting region Alignment is performed (alignment process). In addition, the alignment of the cutting area is similarly performed on the street 21 formed on the semiconductor wafer 2 and extending at right angles to the predetermined direction.

  When the alignment for detecting the cutting area of the semiconductor wafer 2 held on the chuck table 31 is performed as described above, the chuck table 31 holding the semiconductor wafer 2 is moved to the cutting start position of the cutting area. . Then, the cutting blade 323 is moved downward while rotating in the direction indicated by the arrow 322a in FIG. The cutting feed position is set such that the outer peripheral edge of the cutting blade 323 is a depth position (for example, 50 μm) corresponding to the finished thickness of the device from the surface of the semiconductor wafer 2. When the cutting blade 323 is cut and fed in this way, the chuck table 31 is cut and fed in the direction indicated by the arrow X in FIG. As shown in FIG. 5B, a dividing groove 210 having a width (20 μm) and a depth (for example, 50 μm) corresponding to the finished thickness of the device is formed along the street 21 (dividing groove forming step).

  When the divided groove 210 having a predetermined depth is formed along the street 21 on the surface 2a of the semiconductor wafer 2 by performing the above-described divided groove forming step, the semiconductor wafer is formed as shown in FIGS. 3 (a) and 3 (b). The protective tape 4 is stuck on the surface 2a of 2 (the surface on which the device 22 is formed) (protective tape sticking step).

  Next, a wafer dividing step is performed in which the back surface 2b of the semiconductor wafer 2 to which the protective tape 4 is attached is ground, the dividing grooves 210 are exposed on the back surface 2b, and the semiconductor wafer 2 is divided into individual devices 22. This wafer dividing step is performed using a grinding apparatus 5 shown in FIG. 4A includes a chuck table 51 that holds a workpiece, and a grinding unit 53 that includes a grinding wheel 52 for grinding the workpiece held on the chuck table 51. It has. In order to perform the wafer dividing step using the grinding apparatus 5, the protective tape 4 side of the semiconductor wafer 2 is placed on the chuck table 51, and the suction means (not shown) is operated to bring the semiconductor wafer 2 into the chuck table. Hold on 51. Therefore, the back surface 2b of the semiconductor wafer 2 held on the chuck table 51 is on the upper side. If the semiconductor wafer 2 is held on the chuck table 51 in this way, the grinding wheel 52 of the grinding means 53 is moved in the direction indicated by the arrow 52a while the chuck table 51 is rotated in the direction indicated by the arrow 51a, for example, at 300 rpm. For example, while rotating at 6000 rpm, the back surface 2b of the semiconductor wafer 2 is brought into contact with the surface and ground, and grinding is performed until the dividing groove 210 appears on the back surface 2b as shown in FIG. By grinding until the dividing grooves 210 are exposed in this way, the semiconductor wafer 2 is divided into individual devices 22 as shown in FIG. In addition, since the protective tape 4 is stuck on the surface of the plurality of divided devices 22, the form of the semiconductor wafer 2 is maintained without being separated.

  When the wafer dividing step described above is performed, an adhesive film for die bonding is attached to the back surface 2b of the semiconductor wafer 2 divided into individual devices 22, and a dicing tape is attached to the adhesive film side to form a dicing tape. A wafer supporting step is performed in which the outer peripheral portion is supported by an annular frame and the protective member attached to the surface of the semiconductor wafer 2 is peeled off. In the first embodiment of the wafer support process, an adhesive film (DAF) is mounted on the back surface 2b of the semiconductor wafer 2 divided into individual devices 22 as shown in FIGS. 5 (a) and 5 (b). (Adhesive film attachment process). At this time, the adhesive film (DAF) is pressed and attached to the back surface 2b of the semiconductor wafer 2 while being heated at a temperature of 80 to 200 ° C. The adhesive film (DAF) is made of an epoxy resin and is made of a film material having a thickness of 20 μm. If the adhesive film (DAF) is attached to the back surface 2b of the semiconductor wafer 2 in this way, the adhesive film (DAF) of the semiconductor wafer 2 to which the adhesive film (DAF) is attached as shown in FIG. Adhere the side to an extensible dicing tape T mounted on an annular frame F. Accordingly, the protective tape 4 attached to the surface 2a of the semiconductor wafer 2 is on the upper side. Then, the protective tape 4 attached to the surface 2a of the semiconductor wafer 2 is peeled off. In the embodiment shown in FIGS. 5A to 5C, the adhesive film (DAF) side of the semiconductor wafer 2 in which the adhesive film (DAF) is attached to the dicing tape T attached to the annular frame F. In the example shown above, the dicing tape T is attached to the adhesive film (DAF) side of the semiconductor wafer 2 to which the adhesive film (DAF) is attached, and the outer periphery of the dicing tape T is attached to the annular frame F. It may be installed at the same time.

Another embodiment of the wafer support process described above will be described with reference to FIG.
The embodiment shown in FIG. 6 uses a dicing tape with an adhesive film in which an adhesive film (DAF) is previously attached to the surface of the dicing tape T. That is, as shown in FIGS. 6A and 6B, the adhesive film (DAF) attached to the surface of the dicing tape T with the outer peripheral portion attached so as to cover the inner opening of the annular frame F is applied. The back surface 2b of the semiconductor wafer 2 divided into the individual devices 22 is mounted. At this time, the adhesive film (DAF) is pressed and attached to the back surface 2b of the semiconductor wafer 2 while being heated at a temperature of 80 to 200 ° C. The dicing tape T is made of a polyolefin sheet having a thickness of 95 μm in the illustrated embodiment. When a dicing tape with an adhesive film is used in this way, the adhesive film (DAF) is attached by attaching the back surface 2b of the semiconductor wafer 2 to the adhesive film (DAF) adhered to the surface of the dicing tape T. The mounted semiconductor wafer 2 is supported by a dicing tape T mounted on an annular frame F. Then, as shown in FIG. 6B, the protective tape 4 adhered to the surface 2a of the semiconductor wafer 2 is peeled off. In the embodiment shown in FIGS. 6A and 6B, the semiconductor wafer 2 is attached to an adhesive film (DAF) attached to the surface of a dicing tape T having an outer peripheral portion attached to an annular frame F. Although an example of mounting the back surface 2b is shown, an adhesive film (DAF) attached to the dicing tape T is mounted on the back surface 2b of the semiconductor wafer 2 and the outer peripheral portion of the dicing tape T is simultaneously mounted on the annular frame F. May be.

  If the wafer supporting process described above is performed, the dicing tape side to which the semiconductor wafer 2 on which the wafer supporting process has been performed is attached is held by the workpiece holding means of the laser processing apparatus, and from the surface side of the semiconductor wafer 2 An adhesive film dividing step of dividing the adhesive film (DAF) along the dividing groove 210 by irradiating the adhesive film (DAF) with a laser beam through the dividing groove 210 is performed. This adhesive film dividing step is performed using a laser processing apparatus shown in FIG. The laser processing apparatus 6 shown in FIG. 7 includes a stationary base 60 and a chuck table mechanism that is disposed on the stationary base 60 so as to be movable in a machining feed direction (X-axis direction) indicated by an arrow X and holds a workpiece. 7 and a laser beam irradiation unit support mechanism 8 disposed on the stationary base 60 so as to be movable in an index feed direction (Y-axis direction) indicated by an arrow Y orthogonal to the direction indicated by the arrow X (X-axis direction); The laser beam irradiation unit support mechanism 8 includes a laser beam irradiation unit 9 disposed so as to be movable in the direction indicated by the arrow Z (Z-axis direction).

  The chuck table mechanism 7 includes a pair of guide rails 71 and 71 disposed on the stationary base 60 in parallel along the machining feed direction (X-axis direction) indicated by an arrow X, and the guide rails 71 and 71. The first sliding block 72 arranged to be movable in the machining feed direction (X-axis direction) indicated by an arrow X, and the index feed direction (Y-axis direction) indicated by the arrow Y on the first sliding block 72 A second sliding block 73 movably disposed on the second sliding block 73, a cover table 75 supported on the second sliding block 73 by a cylindrical member 74, and a chuck table 76 as a workpiece holding means. ing. The chuck table 76 includes a suction chuck 761 formed of a porous material, and holds, for example, a disk-shaped semiconductor wafer, which is a workpiece, on the suction chuck 761 by suction means (not shown). . The chuck table 76 configured in this manner is rotated by a pulse motor (not shown) disposed in the cylindrical member 74. The chuck table 76 is provided with a clamp 762 for fixing an annular frame described later.

  The first sliding block 72 has a pair of guided grooves 721 and 721 fitted to the pair of guide rails 71 and 71 on the lower surface thereof, and an index feeding direction indicated by an arrow Y on the upper surface ( A pair of guide rails 722 and 722 formed in parallel along the Y-axis direction) are provided. The first sliding block 72 configured as described above is processed by the arrow X along the pair of guide rails 71 and 71 by the guided grooves 721 and 721 fitting into the pair of guide rails 71 and 71. It is configured to be movable in the feed direction (X-axis direction). The chuck table mechanism 7 in the illustrated embodiment includes a machining feed means 77 for moving the first sliding block 72 along the pair of guide rails 71 and 71 in the machining feed direction (X-axis direction) indicated by the arrow X. It has. The machining feed means 77 includes a male screw rod 771 disposed in parallel between the pair of guide rails 71 and 71, and a drive source such as a pulse motor 772 for rotationally driving the male screw rod 771. . One end of the male screw rod 771 is rotatably supported by a bearing block 773 fixed to the stationary base 60, and the other end is connected to the output shaft of the pulse motor 772. The male screw rod 771 is screwed into a through female screw hole formed in a female screw block (not shown) provided on the lower surface of the center portion of the first sliding block 72. Accordingly, by driving the male screw rod 771 forward and backward by the pulse motor 772, the first slide block 72 is moved along the guide rails 71 and 71 in the machining feed direction (X-axis direction) indicated by the arrow X. .

  The laser processing apparatus in the illustrated embodiment includes X-axis direction position detecting means 774 for detecting the processing feed amount of the chuck table 76, that is, the X-axis direction position. The X-axis direction position detecting means 774 is a linear scale 774a disposed along the guide rail 71 and a reading which is disposed on the first sliding block 72 and moves along the linear scale 774a together with the first sliding block 72. It consists of a head 774b. In the illustrated embodiment, the reading head 774b of the X-axis direction position detecting means 774 sends a pulse signal of one pulse every 1 μm to the control means described later. The control means described later counts the input pulse signal to detect the machining feed amount of the chuck table 76, that is, the position in the X-axis direction. When the pulse motor 772 is used as the drive source of the machining feed means 77, the machining feed amount of the chuck table 76 is counted by counting the drive pulses of the control means to be described later that outputs a drive signal to the pulse motor 772. That is, the position in the X-axis direction can also be detected. When a servo motor is used as a drive source for the machining feed means 77, a pulse signal output from a rotary encoder that detects the rotation speed of the servo motor is sent to the control means described later, and the pulse signal input by the control means. Is counted, the machining feed amount of the chuck table 76, that is, the position in the X-axis direction can also be detected.

  The second sliding block 73 is provided with a pair of guided grooves 731 and 731 that fits with a pair of guide rails 722 and 722 provided on the upper surface of the first sliding block 72 on the lower surface thereof. By fitting the guided grooves 731 and 731 to the pair of guide rails 722 and 722, the guided grooves 731 and 731 are configured to be movable in the index feed direction (Y-axis direction) indicated by the arrow Y. The chuck table mechanism 7 in the illustrated embodiment includes an index feed direction (Y-axis direction) indicated by an arrow Y along the pair of guide rails 722 and 722 provided on the first slide block 72. The first index feeding means 78 for moving to the first position is provided. The first index feed means 78 includes a drive source such as a male screw rod 781 disposed in parallel between the pair of guide rails 722 and 722 and a pulse motor 782 for driving the male screw rod 781 to rotate. Contains. One end of the male screw rod 781 is rotatably supported by a bearing block 783 fixed to the upper surface of the first sliding block 72, and the other end is connected to the output shaft of the pulse motor 782. The male screw rod 781 is screwed into a penetrating female screw hole formed in a female screw block (not shown) provided on the lower surface of the center portion of the second sliding block 73. Accordingly, by driving the male screw rod 781 forward and backward by the pulse motor 782, the second sliding block 73 is moved along the guide rails 722 and 722 in the indexing feed direction (Y-axis direction) indicated by the arrow Y. .

  The laser processing apparatus in the illustrated embodiment includes Y-axis direction position detecting means 784 for detecting the indexing processing feed amount of the second sliding block 73, that is, the Y-axis direction position. The Y-axis direction position detecting means 784 moves along the linear scale 784a together with the linear scale 784a disposed along the guide rail 722 and the second sliding block 73 disposed along the linear sliding scale 73. And a read head 784b. The reading head 784b of the Y-axis direction position detecting means 784 sends a pulse signal of one pulse every 1 μm to the control means described later in the illustrated embodiment. The control means described later counts the input pulse signal to detect the index feed amount of the chuck table 76, that is, the position in the Y-axis direction. When a pulse motor 782 is used as a drive source for the first indexing and feeding means 78, the drive pulse of the control means (described later) that outputs a drive signal to the pulse motor 782 is counted, so that the chuck table 76 It is also possible to detect the index feed amount, that is, the position in the Y-axis direction. When a servo motor is used as a drive source for the first index feed means 78, a pulse signal output from a rotary encoder that detects the rotation speed of the servo motor is sent to a control means to be described later, and the control means inputs it. By counting the pulse signals, the index feed amount of the chuck table 76, that is, the position in the Y-axis direction can be detected.

  The laser beam irradiation unit support mechanism 8 includes a pair of guide rails 81, 81 arranged in parallel along the indexing feed direction (Y-axis direction) indicated by an arrow Y on the stationary base 60, and the guide rails 81, A movable support base 82 is provided on 81 so as to be movable in the direction indicated by arrow Y. The movable support base 82 includes a movement support portion 821 that is movably disposed on the guide rails 81, 81, and a mounting portion 822 that is attached to the movement support portion 821. The mounting portion 822 is provided with a pair of guide rails 823 and 823 extending in parallel in a direction indicated by an arrow Z (Z-axis direction) on one side surface. The laser beam irradiation unit support mechanism 8 in the illustrated embodiment has a second index for moving the movable support base 82 along the pair of guide rails 81 and 81 in the index feed direction (Y-axis direction) indicated by the arrow Y. A feeding means 83 is provided. The second indexing and feeding means 83 includes a drive source such as a male screw rod 831 disposed in parallel between the pair of guide rails 81 and 81, and a pulse motor 832 for rotationally driving the male screw rod 831. Contains. One end of the male screw rod 831 is rotatably supported by a bearing block (not shown) fixed to the stationary base 60, and the other end is connected to the output shaft of the pulse motor 832. The male screw rod 831 is screwed into a female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the moving support portion 821 constituting the movable support base 82. Therefore, by driving the male screw rod 831 forward and backward by the pulse motor 832, the movable support base 82 is moved along the guide rails 81, 81 in the indexing feed direction (Y-axis direction) indicated by the arrow Y. .

  The laser beam irradiation unit 9 in the illustrated embodiment includes a unit holder 91 and laser beam irradiation means 92 attached to the unit holder 91. The unit holder 91 is provided with a pair of guided grooves 911 and 911 that are slidably fitted to a pair of guide rails 823 and 823 provided in the mounting portion 822. By being fitted to the guide rails 823 and 823, the guide rails 823 and 823 are supported so as to be movable in the Z-axis direction.

  The laser beam irradiation unit 9 in the illustrated embodiment includes a condensing point position adjusting means 93 for moving the unit holder 91 along the pair of guide rails 823 and 823 in the Z-axis direction. The condensing point position adjusting means 93 includes a male screw rod (not shown) disposed between the pair of guide rails 823 and 823, and a drive source such as a pulse motor 932 for rotationally driving the male screw rod. Therefore, the unit holder 91 and the laser beam irradiation means 92 are moved along the guide rails 823 and 823 in the Z-axis direction by driving the male screw rod (not shown) in the forward and reverse directions by the pulse motor 932. In the illustrated embodiment, the laser beam irradiation means 92 is moved upward by driving the pulse motor 932 forward, and the laser beam irradiation means 92 is moved downward by driving the pulse motor 932 in the reverse direction. Yes.

The illustrated laser beam irradiation means 92 includes a cylindrical casing 921 that is fixed to the unit holder 91 and extends substantially horizontally. The laser beam irradiation means 92 will be described with reference to FIG.
The illustrated laser beam application means 92 includes a pulse laser beam oscillation means 922 disposed in the casing 921, an output adjustment means 923 for adjusting the output of the pulse laser beam oscillated by the pulse laser beam oscillation means 922, and the output adjustment. A condenser 924 for irradiating the workpiece W held on the holding surface of the chuck table 76 with the pulse laser beam whose output is adjusted by the means 923 is provided.

  The pulse laser beam oscillation means 922 includes a pulse laser beam oscillator 922a that oscillates a pulse laser beam, and a repetition frequency setting means 922b that sets a repetition frequency of the pulse laser beam oscillated by the pulse laser beam oscillator 922a. The output adjustment unit 923 adjusts the output of the pulse laser beam oscillated from the pulse laser beam oscillation unit 922 to a predetermined output. The pulse laser beam oscillator 922a, the repetition frequency setting unit 922b, and the output adjustment unit 923 of the pulse laser beam oscillation unit 922 are controlled by a control unit (not shown) to be described later.

  The condenser 924 includes a direction changing mirror 924a for changing the direction of the pulse laser beam oscillated from the pulse laser beam oscillating means 922 and having the output adjusted by the output adjusting means 923 toward the holding surface of the chuck table 76, and the direction changing mirror. A condensing lens 924 b that condenses the pulse laser beam whose direction has been changed by 924 a and irradiates the workpiece W held on the chuck table 76 is provided. The concentrator 924 configured in this manner is attached to the tip of the casing 921 as shown in FIG.

  As shown in FIG. 7, an image pickup means 95 for detecting a processing region to be laser processed by the laser light irradiation means 92 is disposed at the tip of the casing 921 constituting the laser light irradiation means 92. The image pickup means 95 is composed of optical means such as a microscope and a CCD camera, and sends the picked up image signal to a control means described later.

  Continuing the description with reference to FIG. 8, the laser processing apparatus 6 in the illustrated embodiment is attached to the casing 921 of the laser beam irradiation means 92 constituting the laser beam irradiation unit 9 and is held on the chuck table 76 from the laser beam irradiation means 92. Plasma detection means 96 for detecting plasma generated by irradiating the processed workpiece with a laser beam is provided. The plasma detecting means 96 includes a plasma light receiving means 961 for receiving plasma generated by irradiating the workpiece W held on the chuck table 76 with the laser light irradiated from the condenser 924 of the laser beam irradiating means 92. A band-pass filter that passes only light having a wavelength of 245 to 255 nm corresponding to the plasma wavelength (251 nm) of a set substance (for example, silicon (Si)) among the plasma light received by the plasma light receiving means 961 962 and a photo detector 963 that receives light passing through the band pass filter 962 and outputs a light intensity signal. The plasma light receiving means 961 comprises a condensing lens 961a and a lens case 961b for housing the 961a, and the lens case 961b is attached to the casing 921 of the laser beam irradiation means 92 as shown in FIG. The photo detector 963 of the plasma detecting means 96 configured in this way outputs a voltage signal corresponding to the intensity of the received light to the control means described later.

  The laser processing apparatus in the illustrated embodiment includes a control means 10 shown in FIG. The control means 10 is constituted by a computer, and includes a central processing unit (CPU) 101 that performs arithmetic processing in accordance with a control program, a read only memory (ROM) 102 that stores a control program and the like, and a control map and workpiece to be described later. A readable / writable random access memory (RAM) 103 that stores design value data, calculation results, and the like, and an input interface 104 and an output interface 105 are provided. Detection signals from the X-axis direction position detection means 774, the Y-axis direction position detection means 784, the imaging means 95, the photo detector 963 of the plasma detection means 96, and the like are input to the input interface 104 of the control means 10. From the output interface 105 of the control means 10, the pulse motor 772, the pulse motor 782, the pulse motor 832, the pulse motor 932, the pulse laser beam oscillator 922a constituting the pulse laser beam oscillation means 922 of the laser beam irradiation means 92, and the repetition frequency setting. A control signal is output to the means 922b, the output adjusting means 923, the display means 100, and the like. The random access memory (RAM) 103 includes a processing defect information storage area 103a for storing coordinate values of processing defects in the workpiece.

The laser processing apparatus 6 in the illustrated embodiment is configured as described above, and an adhesive film (DAF) mounted on the back surface of the semiconductor wafer 2 on which the wafer support process is performed using the laser processing apparatus 6. The adhesive film dividing step for dividing the film along the dividing groove 210 will be described.
The semiconductor wafer 2 that has been subjected to the wafer support process and is supported by the annular frame F via the dicing tape T places the dicing tape T side on the chuck table 76 of the laser processing apparatus 6 shown in FIG. Then, by operating a suction means (not shown), the semiconductor wafer 2 is sucked and held on the chuck table 76 via the dicing tape T. Therefore, the semiconductor wafer 2 is held with the surface facing up. The annular frame F is fixed by a clamp 762.

  As described above, the chuck table 76 that sucks and holds the semiconductor wafer 2 is positioned directly below the imaging unit 95 by the processing feed unit 77. When the chuck table 76 is positioned immediately below the imaging means 95, the semiconductor wafer 2 on the chuck table 76 is positioned at the coordinate position shown in FIG. In this state, the image pickup means 95 is operated, and the machining feed means 77 and the first index feed means 78 are operated to move the chuck table 76, so that the semiconductor wafer 2 held on the chuck table 76 is formed. All the divided grooves 210 are detected, and the control means 10 determines the coordinate values of all the divided grooves 210 based on the detection signals from the X-axis direction position detecting means 774 and the Y-axis direction position detecting means 784 as a random access memory (RAM). ) 103 (alignment process).

  Next, as shown in FIG. 11A, the semiconductor wafer 2 sucked and held on the chuck table 76 via the dicing tape T is moved to the laser beam irradiation region where the condenser 924 is located, and a predetermined dividing groove is obtained. 210 is positioned directly below the light collector 924. Next, the control means 10 outputs a control signal to the laser beam irradiation means 92 and irradiates the adhesive film (DAF) with a pulsed laser beam having an absorptive wavelength from the condenser 924, and displays the chuck table 76. In 11 (a), the machining feed means 77 is controlled so as to move at a predetermined machining feed speed in the direction indicated by the arrow X1. When the other end of the dividing groove 210 reaches a position immediately below the condenser 924 as shown in FIG. 11B, the irradiation of the pulse laser beam is stopped and the movement of the chuck table 76 is stopped. As a result, the pulsed laser beam is applied to the adhesive film DAF through the predetermined dividing groove 210, and the cutting groove G is formed along the dividing groove 210 in the adhesive film DAF as shown in FIG. Dividing step).

The processing conditions in the adhesive film dividing step are set as follows, for example.
Light source: LD excitation Q switch Nd: YVO4 pulse laser Wavelength: 355 nm pulse laser Repetition frequency: 50 kHz
Average output: 2W
Condensing spot diameter: φ10μm
Processing feed rate: 300 mm / sec

  When the adhesive film dividing step is performed, if the gap between the dividing grooves 210 formed in the semiconductor wafer 2 is insufficient, or the device 22 protrudes toward the dividing groove 210, the laser beam is partially emitted from the device 22. Occasionally there will be places where the adhesive film (DAF) is not cut off due to obstruction. In order to grasp the place where the adhesive film (DAF) is not cut, the control means 10 operates the plasma detecting means 96 when the adhesive film dividing step is performed. In this adhesive film dividing step, the control means 10 inputs a light intensity signal from the photo detector 963 of the plasma detection means 96. When the pulsed laser beam irradiated from the condenser 924 is irradiated to the adhesive film (DAF) through the dividing groove 210 in the adhesive film dividing step, plasma is generated by irradiating the adhesive film (DAF) with the pulsed laser beam. The wavelength of the light is received by the plasma light receiving means 961 but is other than 245 to 255 nm that passes through the bandpass filter 962, and therefore cannot pass through the bandpass filter 962. On the other hand, when the device 22 protrudes toward the dividing groove 210 and the device 22 is irradiated with a pulse laser beam, plasma light having a wavelength of 251 nm is generated because the device 22 is formed of silicon. For this reason, the plasma light having a wavelength of 251 nm received by the plasma light receiving means 961 passes through the band-pass filter 962 and reaches the photo detector 963, so that the photo detector 963 sends a voltage signal corresponding to the received light intensity to the control means 10. . The control means 10 determines that the signal sent from the photo detector 963 is based on the plasma of the device 22 made of a silicon wafer. The control unit 10 outputs a voltage signal corresponding to the light intensity received from the photodetector 963 based on the detection signals from the X-axis direction position detection unit 774 and the Y-axis direction position detection unit 784. The coordinate value is stored in the random access memory (RAM) 103 as a defective processing coordinate value (processing defective coordinate value detection step).

  As described above, the adhesive film (DAF) is irradiated with the pulsed laser beam through all the divided grooves 210 formed in a predetermined direction to form the cut grooves G along the divided grooves 210 in the adhesive film (DAF). When the process is performed, the control means 10 operates the first indexing and feeding means 78 to move the chuck table 76 in the direction indicated by the arrow Y in FIG. 7 so that the adjacent dividing groove 210 is directly below the condenser 924. The above-mentioned adhesive film dividing step is carried out. After performing the adhesive film dividing step of irradiating the adhesive film (DAF) with the pulsed laser beam through the dividing grooves 210 formed in the predetermined direction as described above, the chuck table 76 is rotated by 90 degrees to make the predetermined direction. On the other hand, an adhesive film dividing step of irradiating the adhesive film (DAF) with a pulsed laser beam through a dividing groove 210 formed in a direction perpendicular to the adhesive film is performed. When the adhesive film dividing step of irradiating the adhesive film (DAF) with the pulsed laser beam through all the dividing grooves 210 formed in the semiconductor wafer 2 in this way is performed, the defective processing coordinate value detecting step is performed as described above. And the coordinate value of the part where the adhesive film (DAF) is not cut is stored in the processing defect information storage area 103 a of the random access memory (RAM) 103. Further, the coordinate value of the portion where the adhesive film (DAF) stored in the processing defect information storage area 103a of the random access memory (RAM) 103 is not cut is displayed on the display unit 100 as processing defect information.

As described above, the coordinate value of the portion where the adhesive film (DAF) as the processing defect information displayed on the display means 100 is not cut is used in the pickup process, which is the next process, so that the device can be used together with the adhesive film. The problem of being unable to pick up can be solved.
Further, based on the coordinate value of the part where the adhesive film (DAF) as the processing defect information displayed on the display means 100 is not cut, the device of the processing defect area is imaged to inspect the cause of the processing defect. Can do.

Although the present invention has been described based on the illustrated embodiment, the present invention is not limited to the embodiment, and various modifications are possible within the scope of the gist of the present invention. For example, the plasma detection unit in the above embodiment includes a plasma light receiving unit 961 that receives plasma generated by irradiating the workpiece W with a laser beam, and a bandpass filter that passes only the plasma light having a set wavelength. Although an example including the photo detector 963 that receives the light that has passed through the band pass filter 962 and outputs a light intensity signal has been shown, the following detection method may be used.
(1) Without using the bandpass filter, if the light intensity of the plasma detected by the photodetector reaches a predetermined value, it is determined as abnormal.
(2) In the method (1), since the oscillation wavelength of the laser to be irradiated becomes an obstacle, a photo detector is disposed after a filter that blocks only the wavelength of the laser to be irradiated (for example, 355 nm) to detect plasma.
(3) Plasma is detected with a shift from the pulse oscillation timing of the pulse laser to be irradiated. In this method, although the influence of the irradiation laser is reduced, it is desirable to dispose a filter that blocks only the wavelength of the irradiation laser (for example, 355 nm) in front of the photodetector.

2: Semiconductor wafer 21: Street 22: Device 210: Dividing groove 3: Cutting device 31: Chuck table of cutting device 32: Cutting means 33: Imaging means 4: Protection tape 5: Grinding device 51: Chuck table of grinding device 52: Grinding wheel 6: Laser processing device 7: Chuck table mechanism 76: Chuck table 77: Processing feed means 78: First index feed means 8: Laser beam irradiation unit support mechanism 82: Movable support base 83: Second index feed means 9: Laser beam irradiation unit 92: Laser beam irradiation unit 922: Pulse laser beam oscillation unit 923: Output adjustment unit 924: Condenser 95: Imaging unit 96: Plasma detection unit 961: Plasma light receiving unit 962: Band pass filter 963: Photo detector 10: Control means DAF: adhesive film F: annular frame T: dicing tape

Claims (2)

A wafer in which devices are formed in a plurality of regions partitioned by a plurality of streets formed in a lattice pattern on the surface is divided into individual devices along the streets, and an adhesive film is attached to the back surface of each device. A processing method,
A split groove forming step of forming a split groove having a depth corresponding to the finished thickness of the device along the street from the surface side of the wafer;
A protective member attaching step for attaching a protective member to the surface of the wafer on which the divided groove forming step has been performed;
A wafer dividing step of grinding the back surface of the wafer on which the protective member attaching step has been performed to expose the dividing grooves on the back surface, and dividing the wafer into individual devices;
A protective film that is attached to the front surface of the wafer by attaching an adhesive film to the back surface of the wafer that has undergone the wafer splitting process, attaching a dicing tape to the adhesive film side, and supporting the outer periphery of the dicing tape with an annular frame. A wafer support step for peeling the member;
By holding the wafer-attached dicing tape side to the workpiece holding means of the laser processing apparatus and irradiating the adhesive film with a laser beam through the dividing groove from the wafer surface side. An adhesive film dividing step of dividing the adhesive film along the dividing groove,
The adhesive film dividing step detects the plasma light emitted when the laser beam is irradiated, and records the coordinate value when detecting the plasma light emitted when the device is irradiated with the laser beam.
A method for processing a wafer. A device formed in a plurality of regions partitioned by a plurality of streets formed in a lattice pattern on the surface is divided into individual devices by dividing grooves along the streets, and an adhesive film for die bonding is mounted on the back surface side. A workpiece holding means for holding the wafer, a laser beam irradiation means for irradiating the adhesive film with a laser beam along the dividing groove from the surface side of the wafer held by the workpiece holding means, A workpiece feed means for moving the workpiece holding means and the laser beam irradiation means relative to the machining feed direction (X-axis direction), and a workpiece feed direction (X-axis direction) for the workpiece holding means and the laser beam irradiation means. Index feed means that moves relative to the index feed direction (Y-axis direction) perpendicular to the axis, and the X-axis direction position of the workpiece holding means That the X-axis direction position detecting means, a Y-axis direction position detecting means for detecting the Y-axis direction position of the workpiece holding means, the machining to be split grooves of the wafer held on the workpiece holding device In a laser processing apparatus comprising an imaging means for imaging,
Plasma detection for detecting plasma light generated by irradiating the wafer with the laser beam when the adhesive film is irradiated with the laser beam along the divided grooves of the wafer held by the workpiece holding means Means and control means,
The control means records a coordinate value generated by the plasma light detected by the plasma detection means based on detection signals from the plasma detection means, the X-axis direction position detection means, and the Y-axis direction position detection means. And a detection signal from the X-axis direction position detection means and the Y-axis direction position detection means when the plasma detection means detects plasma light generated by irradiating the wafer with the laser beam. The coordinate value at which the plasma light is generated is obtained based on the above, and the coordinate value at which the plasma light is generated is recorded in the memory as a defective processing coordinate value .
Laser processing equipment characterized by that.

Images