JP6035721B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6035721B2 JP6035721B2 JP2011211096A JP2011211096A JP6035721B2 JP 6035721 B2 JP6035721 B2 JP 6035721B2 JP 2011211096 A JP2011211096 A JP 2011211096A JP 2011211096 A JP2011211096 A JP 2011211096A JP 6035721 B2 JP6035721 B2 JP 6035721B2
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 39
- 229910002601 GaN Inorganic materials 0.000 claims description 31
- 125000006850 spacer group Chemical group 0.000 claims description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 181
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Description
原料:トリメチルアルミニウム(Tri Methyl Aluminum:TMA)、トリメチルインジウム(Tri Methyl Indium:TMI)、アンモニア(NH3)
キャリアガス:窒素(N2)、水素(H2)
TMAの流量:10〜500sccm(1.69×10−2〜8.45×10−1Pa・m3/s)
TMIの流量:10〜500sccm
NH3の流量:0.1〜100slm(1.69×10−1〜1.69×102Pa・m3/s)
炉内圧力:大気圧(101.3kPa)〜100Torr(13.3MPa)
成長温度(成長時の基板の温度):500〜1000℃
原料:TMA、NH3
成長温度:500〜1200℃
スペーサ層14上にチャネル層16を形成する。
原料:トリメチルガリウム(Tri Methyl Gallium:TMG)、NH3
TMGの流量:20〜1000sccm(3.38×10−2〜1.69Pa・m3/s)
成長温度:800〜1200℃
チャネル層16上に電子供給層18を形成する。
原料:TMA、TMG、NH3
成長温度:700〜1400℃
電子供給層18上にキャップ層20を形成する。
原料:TMG、NH3
成長温度:800〜1200℃
12 第1バッファ層
14 スペーサ層
16 チャネル層
18 電子供給層
20 キャップ層
24 ソース電極
26 ドレイン電極
28 ゲート電極
30 第2バッファ層
100、200 HEMT
Claims (5)
- n型窒化ガリウムからなる基板の上に、窒化物インジウムアルミニウム(InxAl1−xN、0.15≦x≦0.2)からなる第1バッファ層を設ける工程と、
前記第1バッファ層の上面に接触する、厚さ1nm以上10nm以下の窒化アルミニウムからなるスペーサ層を設ける工程と、
前記スペーサ層の上面に接触する能動層を設ける工程と、を具備し、
前記スペーサ層の成長温度は、前記能動層の成長温度より低く、
前記能動層の成長温度は前記第1バッファ層の成長温度より高い半導体装置の製造方法。 - 前記能動層を設ける工程は、チャネル層を設ける工程と、前記チャネル層上に電子供給層を設ける工程とを含む請求項1記載の半導体装置の製造方法。
- 前記チャネル層は窒化ガリウムにより形成され、
前記電子供給層は、窒化アルミニウムガリウム又は窒化インジウムアルミニウムにより形成される請求項2記載の半導体装置の製造方法。 - 前記基板と前記第1バッファ層との間に、i型窒化ガリウム又は半絶縁性窒化ガリウムからなる第2バッファ層を形成する工程を有することを特徴とする請求項1から3のいずれか一項に記載の半導体装置の製造方法。
- 前記能動層の上にソース電極、ドレイン電極およびゲート電極を設ける工程を有する請求項1から4のいずれか一項に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011211096A JP6035721B2 (ja) | 2011-09-27 | 2011-09-27 | 半導体装置の製造方法 |
US13/628,405 US8653563B2 (en) | 2011-09-27 | 2012-09-27 | Semiconductor device |
Applications Claiming Priority (1)
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JP2011211096A JP6035721B2 (ja) | 2011-09-27 | 2011-09-27 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013074045A JP2013074045A (ja) | 2013-04-22 |
JP6035721B2 true JP6035721B2 (ja) | 2016-11-30 |
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JP2011211096A Expired - Fee Related JP6035721B2 (ja) | 2011-09-27 | 2011-09-27 | 半導体装置の製造方法 |
Country Status (2)
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US (1) | US8653563B2 (ja) |
JP (1) | JP6035721B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497721B (zh) * | 2013-05-27 | 2015-08-21 | Univ Nat Chiao Tung | 增強型氮化鎵電晶體及其形成方法 |
JP6319975B2 (ja) * | 2013-09-11 | 2018-05-09 | 学校法人 名城大学 | 窒化物半導体混晶の製造方法 |
US9620598B2 (en) * | 2014-08-05 | 2017-04-11 | Semiconductor Components Industries, Llc | Electronic device including a channel layer including gallium nitride |
JP6261523B2 (ja) * | 2015-01-08 | 2018-01-17 | 信越半導体株式会社 | 電子デバイス用エピタキシャル基板の製造方法、並びに電子デバイスの製造方法 |
JP2017041542A (ja) * | 2015-08-20 | 2017-02-23 | 株式会社東芝 | 半導体装置 |
KR102403038B1 (ko) * | 2016-08-23 | 2022-05-27 | 큐로미스, 인크 | 가공된 기판과 통합된 전자 전력 디바이스 |
JP2018056319A (ja) * | 2016-09-28 | 2018-04-05 | 富士通株式会社 | 半導体装置、半導体装置の製造方法、電源装置及び増幅器 |
US20220157980A1 (en) * | 2019-03-20 | 2022-05-19 | Panasonic Corporation | Nitride semiconductor device |
CN113130645A (zh) * | 2020-12-18 | 2021-07-16 | 英诺赛科(苏州)科技有限公司 | 半导体器件以及制造半导体器件的方法 |
US20220199817A1 (en) | 2020-12-18 | 2022-06-23 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN112750689A (zh) * | 2021-01-18 | 2021-05-04 | 西安电子科技大学 | 镓极性面氮化镓材料及同质外延生长方法 |
CN113555431B (zh) * | 2021-07-21 | 2022-12-02 | 西安电子科技大学 | 基于P型GaN漏电隔离层的同质外延氮化镓高电子迁移率晶体管及制作方法 |
Family Cites Families (16)
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JP3728332B2 (ja) * | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
JPH09186363A (ja) * | 1995-12-27 | 1997-07-15 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP3740744B2 (ja) * | 1996-07-12 | 2006-02-01 | ソニー株式会社 | 半導体の成長方法 |
EP1421626A2 (en) * | 2001-08-07 | 2004-05-26 | Jan Kuzmik | High electron mobility devices |
JP4077731B2 (ja) * | 2003-01-27 | 2008-04-23 | 富士通株式会社 | 化合物半導体装置およびその製造方法 |
KR100661708B1 (ko) * | 2004-10-19 | 2006-12-26 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US8575651B2 (en) * | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
US7326971B2 (en) * | 2005-06-08 | 2008-02-05 | Cree, Inc. | Gallium nitride based high-electron mobility devices |
EP2096675B1 (en) * | 2008-02-28 | 2013-08-21 | Universität Ulm | III-V nitride semiconductor device comprising a diamond layer |
CN101981677B (zh) * | 2008-03-24 | 2013-10-30 | 日本碍子株式会社 | 半导体元件用外延基板、半导体元件及半导体元件用外延基板的制作方法 |
JP5487631B2 (ja) * | 2009-02-04 | 2014-05-07 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP5634681B2 (ja) | 2009-03-26 | 2014-12-03 | 住友電工デバイス・イノベーション株式会社 | 半導体素子 |
JP2011040676A (ja) * | 2009-08-18 | 2011-02-24 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
JP2011049271A (ja) * | 2009-08-26 | 2011-03-10 | Sanken Electric Co Ltd | 半導体装置 |
DE102009041548A1 (de) * | 2009-09-15 | 2011-03-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterstruktur |
JP2011077386A (ja) * | 2009-09-30 | 2011-04-14 | Sumitomo Electric Ind Ltd | 高電子移動度トランジスタ、エピタキシャル基板、及び高電子移動度トランジスタを作製する方法 |
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2011
- 2011-09-27 JP JP2011211096A patent/JP6035721B2/ja not_active Expired - Fee Related
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2012
- 2012-09-27 US US13/628,405 patent/US8653563B2/en active Active
Also Published As
Publication number | Publication date |
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US8653563B2 (en) | 2014-02-18 |
JP2013074045A (ja) | 2013-04-22 |
US20130075753A1 (en) | 2013-03-28 |
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