JP5691457B2 - Gas barrier film and method for producing gas barrier film - Google Patents

Description

The present invention relates primarily to organic electronic devices, such as a package or an organic electroluminescence element or solar cell, the gas barrier film used in the display material such a plastic substrate such as a liquid crystal and its manufacturing how.

  Conventionally, a gas barrier film in which a metal oxide thin film such as aluminum oxide, magnesium oxide, or silicon oxide is formed on the surface of a plastic substrate or film is used for packaging goods and foods that require blocking of various gases such as water vapor and oxygen. It is widely used in packaging applications to prevent the alteration of industrial products and pharmaceuticals.

  In addition to packaging applications, it is used in liquid crystal display elements, solar cells, organic electroluminescence (EL) substrates, and the like.

  As a method for producing such a gas barrier film, a chemical volume method (plasma CVD) is used in which an organic silicon compound typified by tetraethoxysilane (TEOS) is used to form a film on a substrate while being oxidized with oxygen plasma under reduced pressure. And a sputtering method in which metal Si is evaporated using a semiconductor laser and deposited on a substrate in the presence of oxygen.

These methods have been preferably used for the production of metal oxide thin films including SiO ₂ because a thin film having an accurate composition can be produced on the substrate. There were problems such as requiring time to open to the atmosphere, difficulty in continuous production, and significant increase in equipment size.

  In order to solve such problems, a method of producing a silicon oxide thin film by applying a silicon-containing compound and modifying the coating film for the purpose of improving productivity, and a chemical vapor deposition method (CVD method) Attempts have been made to generate plasma at atmospheric pressure to form a film at atmospheric pressure, and gas barrier films have been studied.

  As a silicon oxide film that can be generally produced by a solution process, a technique of producing an alkoxide compound as a raw material by a method called a sol-gel method is known.

  This sol-gel method generally requires heating to a high temperature, and further, there is a problem that a large volume shrinkage occurs in the course of the dehydration condensation reaction, and many defects are likely to occur in the film.

  In order to prevent this, methods have been found to mix organic substances that are not directly involved in the production of oxides into the raw material solution. However, these organic substances remain in the film, and there is concern that the barrier properties of the entire film may be reduced. Has been.

  For these reasons, it has been difficult to directly use an oxide film produced by a sol-gel method as a protective film of a flexible electronic device.

  As another method, it has been proposed to produce silicon oxide using a silazane compound having a basic structure of silazane structure (Si-N) as a raw material. In this case, the reaction is not from dehydration condensation polymerization but from nitrogen to oxygen. Since this is a direct substitution reaction, it is known that a dense film having a mass yield before and after the reaction of 80% to 100% or more and few defects in the film due to volume shrinkage can be obtained.

  However, the production of a silicon oxide thin film by a substitution reaction of a silazane compound requires a high temperature of 450 ° C. or higher and cannot be applied to a flexible substrate such as plastic.

  In recent years, using optical energy of 100 nm to 200 nm called vacuum ultraviolet light (VUV light) larger than the interatomic bonding force in the silazane compound, the bonds of atoms are directly cut by the action of only photons called photon processes. There has been proposed a method for producing a silicon oxide film at a relatively low temperature by causing an oxidation reaction with active oxygen or ozone to proceed.

  For example, a technique is disclosed in which a coating liquid containing polysilazane as a main component is applied and surface treatment is performed with ultraviolet rays under atmospheric pressure. A polysilazane film containing an amine-based catalyst is prepared by a wet method, and a wavelength of 150 nm to Disclosed is a technique for modifying a polysilazane film into a silicon oxide thin film by irradiating 200 nm VUV light to produce a barrier layer, and further, ultraviolet light having a wavelength of 230 nm to 300 nm for sufficient progress of the silicon oxide film. A method of irradiating with (UV light) simultaneously or alternately, a method of regulating the water vapor concentration, an additional introduction of ozone, etc. are disclosed (for example, see Patent Document 1).

However, in this method, particularly for producing a high-density modified film, if a large amount of reforming energy (for example, increasing the duration of irradiation with vacuum ultraviolet rays) is applied, the film surface is likely to crack, and possibly low density. When the catalyst remains in the membrane, the catalyst portion becomes a low density defect, and even when the catalyst escapes from the membrane due to the energy of the reforming process, the portion where the catalyst has escaped creates a void. Therefore, there is a limit to improving the film density after modification, and the water vapor transmission rate is such that the gas barrier is much lower than 1 × 10 ⁻² g / m ² · day, which is the minimum required for organic photoelectric conversion elements. Realization of sex was difficult.

  Furthermore, it is considered that hydrolysis proceeds with an amine catalyst and a large amount of Si—OH is present in the film, so that the film has a high affinity for water and has a high water vapor transmission rate.

  Furthermore, an oxidizing gas (for example, oxygen gas) is introduced at the time of irradiation with vacuum ultraviolet rays, the polysilazane bond is efficiently cut, and then further heated and oxidized at 100 ° C. to 400 ° C. in a heated steam or oxidizing gas atmosphere. A technique for firing at 400 ° C. to 1000 ° C. in an inert atmosphere is disclosed (for example, see Patent Document 2).

  As a result of intensive studies by the present inventors, it has been found that the presence of an appropriate oxidizing gas and an appropriate light energy for activating the polysilazane bond are necessary in order to efficiently advance the modification of polysilazane. . Especially when reforming using excimer light, the amount of excimer light reaching the film surface varies greatly depending on the oxygen concentration in the atmosphere, so control is performed so that the oxygen concentration does not become too high for efficient processing. It is necessary.

In fact, as a result of investigations within a processing time of several minutes by the present inventors in consideration of actual production, a level that is significantly lower than 1 × 10 ⁻² g / m ² · day when only high-concentration oxidizing gas is oxidized. It was not possible to obtain a gas barrier film having a water vapor transmission rate of 5 μm.

  Furthermore, Patent Document 2 discloses post-oxidation treatment and baking treatment using heating together, but it is virtually impossible to use an inexpensive general-purpose plastic substrate having a very high heating temperature.

  Moreover, the technique using the film with a transparent conductive film comprised with the transparent base material, the barrier layer, and the transparent conductive film for a display etc. is disclosed (for example, refer patent document 3). However, with this film configuration, the barrier properties required by the present inventors are still insufficient, and it has been difficult to obtain stable performance over a long period of time as a device.

  As described above, with the currently disclosed methods, it is difficult to produce a gas barrier film and a gas barrier film that can be applied to flexible electronic device applications, are inexpensive, have excellent durability, and have high gas barrier properties. A solution to the problem is desired.

Special table 2009-503157 JP 2009-76869 A JP 2008-41640 A

The present invention has been made in view of the above problems, high productivity, and the gas barrier film having a gas barrier film that can achieve a high gas barrier performance and high durability, a manufacturing how the gas barrier film It is to provide.

  The above object of the present invention is achieved by the following configurations.

  1. In the method for producing a gas barrier film having at least one gas barrier layer on a substrate, a step of applying a solution containing polysilazane to form a coating film, and then a step of modifying the resulting coating film And a step of irradiating with vacuum ultraviolet rays (VUV) during the step of modifying, and after the step of applying a solution containing the polysilazane to form a coating film, before the step of modifying A gas barrier film production comprising a step of heat-treating at a temperature of 150 ° C. or higher and a Tg temperature of a substrate or lower at least at one time selected from the reforming step and after the reforming step. Method.

  2. 2. The method for producing a gas barrier film as described in 1 above, wherein the polysilazane is perhydropolysilazane.

  3. 3. The method for producing a gas barrier film as described in 1 or 2 above, wherein the humidity in the step of modifying the coating film is adjusted to an atmosphere having a dew point temperature of 0 ° C. or lower.

  4). 4. The method for producing a gas barrier film according to any one of 1 to 3, wherein a content of the reaction catalyst of the polysilazane in the solution containing the polysilazane is 5% by mass or less.

  5. 5. The method for producing a gas barrier film according to any one of 1 to 4, wherein the solution containing the polysilazane does not contain a reaction catalyst for the polysilazane.

  6). 6. The method for producing a gas barrier film according to any one of 1 to 5, wherein an oxygen concentration at the time of the vacuum ultraviolet ray (VUV) irradiation is 500 ppm or more and 10,000 ppm or less.

7). 1 to 6 above, wherein the vacuum ultraviolet ray maximum irradiation intensity on the surface of the coating film containing polysilazane is 100 mW / cm ² or more and 200 mW / cm ² or less during the vacuum ultraviolet ray (VUV) irradiation step. The manufacturing method of the gas barrier film of any one of Claims 1.

8). 8. The gas barrier film according to 7 above, wherein the step of modifying further comprises a step of irradiating a vacuum ultraviolet ray (VUV) with a maximum ultraviolet ray irradiation intensity of less than 100 mW / cm ^{2 on} the coating film surface. Production method.

  9. The gas barrier film has an intermediate layer between the base material and the gas barrier layer, and a coating film is formed by applying a solution containing the polysilazane on the intermediate layer. The method for producing a gas barrier film according to any one of 1 to 8.

  10. 10. The method for producing a gas barrier film according to 9, wherein the intermediate layer is formed by curing an ultraviolet curable resin or a thermosetting resin on the substrate.

11. 11. A gas barrier film produced by the method for producing a gas barrier film according to any one of 1 to 10, wherein the water vapor permeability (WVTR) of the gas barrier film in the following evaluations 1 to 3 is A gas barrier film characterized by being less than 1 × 10 ⁻⁴ g / m ² / day .
[Evaluation 1: Evaluation of bending resistance (60 ° C., 90% RH)]
The water vapor transmission rate is measured in accordance with the method described below for a gas barrier film that has been subjected to repeated bending 100 times at an angle of 180 degrees in advance so that the curvature has a radius of 10 mm.
Using a vacuum vapor deposition apparatus, metal calcium is vapor-deposited by masking other than the vapor-deposited portion of the gas barrier film (9 locations of 12 mm × 12 mm).
Thereafter, the mask is removed in a vacuum state, and aluminum is vapor deposited from another metal vapor deposition source on the entire surface of one side of the sheet. After sealing with aluminum, the vacuum state is released, and in a dry nitrogen gas atmosphere, quartz glass with a thickness of 0.2 mm is made to face the aluminum sealing side via an ultraviolet curing resin for sealing, and then irradiated with ultraviolet rays. Thus, an evaluation cell is produced.
The obtained sample with both sides sealed is stored under high temperature and high humidity of 60 ° C. and 90% RH, and the amount of moisture permeated into the cell is calculated from the amount of corrosion that has reacted with the moisture of metallic calcium.
[Evaluation 2: Evaluation of high temperature and high humidity resistance (85 ° C., 90% RH)]
The gas barrier film is stored for 100 hours continuously in a high-temperature and high-humidity tank adjusted to 85 ° C. and 90% RH without being bent, and thereafter, the water vapor transmission rate is measured in the same manner as in Evaluation 1 above.
[Evaluation 3: Evaluation of cycle thermo resistance]
The gas barrier film is subjected to a temperature and humidity cycle test under conditions in accordance with JIS C8938, and then the water vapor transmission rate is measured in the same manner as in the evaluation 1.

The present invention, high productivity, a gas barrier film having a gas barrier film that can achieve a high gas barrier performance and high durability, it is possible to provide a manufacturing how the gas barrier film.

It is sectional drawing which shows an example of the solar cell which consists of a bulk heterojunction type organic photoelectric conversion element. It is sectional drawing which shows an example of the solar cell which has an organic photoelectric conversion element provided with a tandem type bulk heterojunction layer. It is sectional drawing which shows an example of the solar cell which has an organic photoelectric conversion element provided with a tandem type bulk heterojunction layer.

  Hereinafter, the present invention, its components, and embodiments for carrying out the present invention will be described in detail.

<< Production Method of Gas Barrier Film and Gas Barrier Film >>
The manufacturing method of the gas barrier film of the present invention and the gas barrier film of the present invention manufactured by the manufacturing method will be described.

  The method for producing a gas barrier film of the present invention comprises a step of applying a solution containing polysilazane to form a coating film in a method for producing a gas barrier film having at least one gas barrier layer on a substrate, After the step of modifying the obtained coating film and the step of irradiating with vacuum ultraviolet rays (VUV) during the step of modifying treatment, and forming the coating film by applying a solution containing the polysilazane And at least one time selected before the reforming process, during the reforming process process and after the reforming process process, and heat-treating at a temperature not lower than 150 ° C. and not higher than the Tg temperature of the substrate. It is characterized by having.

  With such a configuration, a method for producing a gas barrier film having high productivity, high gas barrier performance and high durability, in particular, bending resistance, high temperature and high humidity resistance (hereinafter also referred to as thermo resistance) is provided. is there.

  In the present invention, a combination of a polysilazane coating film modified by irradiation with vacuum ultraviolet rays (VUV) and a heat treatment at a high temperature of 150 ° C. or higher can be used in an evaporation method, a plasma CVD method, an ion plating method, etc. Good bending resistance and thermo resistance not obtained with the formed barrier can be obtained. This is because the barrier film modified by irradiation with vacuum ultraviolet rays (VUV) does not necessarily have a single composition, and there is room for the molecular structure and atomic composition in the film to change due to the addition of additional energy. it seems to do. By promoting the dehydration condensation reaction by high-temperature heating, for example, not only the barrier property is improved but also the stability of the barrier performance is improved as compared with the case where there is no combination with high-temperature heat treatment. That is, an excellent barrier film can be manufactured by the manufacturing method of the present application, and the lifetime of a device using the barrier film for sealing is also improved.

  Thus, the effect of the combination with high temperature heating is a phenomenon peculiar to the barrier film modified by irradiating the coating film containing polysilazane with vacuum ultraviolet (VUV), and is formed by the vapor phase method as described above. In the barrier film, the effect of improving the barrier property, stability and device life is not seen.

  In addition, when a conductive film is formed adjacent to the barrier layer (for example, the method described in Patent Document 3 described above), it is preferable to perform high-temperature baking for improving conductivity, but in practice, the temperature is 450 ° C. or higher. Such a resin base material is not practical because it is not effective unless it is at a temperature higher than the range that cannot be tolerated. However, in the case of the conductive film provided on the gas barrier layer formed by the coating method of the present invention, the lifetime of the device is improved even by heat treatment at 150 ° C. or higher and 300 ° C. or lower. This peculiar phenomenon is probably because the coating-type barrier layer formed at a low temperature has room for structural change by giving more energy. Even if the heat treatment is performed at about 150 ° C., for example, the adhesion between the barrier layer and the conductive film is improved, and as a result, the lifetime of the device may be improved. In addition, heat treatment during a device formation process such as conductive film formation is also preferable in that the process can be simplified because the present invention can also serve as heating for the barrier layer.

  In the method for producing a gas barrier film of the present invention, in order to dispose a gas barrier layer on both surfaces of the substrate, it is preferable to apply a solution containing polysilazane on both surfaces of the substrate to form a coating film, and to perform a modification treatment step. . For example, when a gas barrier film is used for flexible display applications, the process temperature may exceed 200 ° C. in the array manufacturing process. By forming gas barrier layers on both sides, dimensional changes due to moisture absorption and desorption of the base film itself under severe conditions of high temperature and high humidity are suppressed, and stress on the gas barrier layer is reduced and the device durability is improved. Contributes to the improvement of sex. Also from such a viewpoint, a heat-resistant material having a glass transition point of 150 ° C. or higher is used as a base material. In other words, heat-resistant resins represented by polyimide and polyetherimide are non-crystalline, so the water absorption is larger than crystalline polyethylene terephthalate and polyethylene naphthalate, and the dimensional change of the substrate due to humidity is more It gets bigger. When a heat-resistant material is used as the base material, and further, when a gas barrier layer is provided on both the front and back sides of the base material, the dimensional change of the base material at both high temperature and high humidity can be suppressed, and the barrier Contributes to performance. Furthermore, in addition to the high heat-resistant substrate, it is also preferable to use a thermosetting resin as the intermediate layer according to the present invention.

The gas barrier property referred to in the present invention is a water vapor permeability (60 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured by a method in accordance with JIS K 7129-1992 is 1 × 10. ⁻³ g / (m ² · 24 h) or less, and the oxygen permeability measured by a method according to JIS K 7126-1987 is 1 × 10 ⁻³ ml / m ² · 24 h · atm or less (1 atm is 1.01325 × 10 ⁵ Pa).

  Note that the gas barrier layer (also simply referred to as a gas barrier layer, a barrier layer, or a barrier film) may be a single layer (a layer that can be formed by one application) or a plurality of similar layers. By providing a plurality of layers, it is more preferable in that the gas barrier property can be further improved. In addition, a gas barrier layer may be provided only on one side of the base material, but if a similar gas barrier layer is provided on both sides of the base material, deformation of the base material is suppressed, and the device fabrication process resistance is also improved compared to the case of a single side. In view of improving barrier properties, it is more preferable.

  The step of modifying the coating after the step of forming a coating by applying a solution containing perhydropolysilazane will be described in detail later.

[Low-humidity treatment of paint film containing polysilazane]
In the prior art, the main point was how to proceed with the hydrolysis and dehydration condensation reaction of polysilazane. In the preferred embodiment of the present invention, however, the hydrolysis reaction of polysilazane prior to the modification treatment by vacuum ultraviolet (VUV) irradiation. The point that focused on how to not cause is completely different.

  As a result of intensive studies by the present inventors, the hydrolysis reaction proceeds before the reforming treatment, and even if the coating film containing a large amount of Si—OH in the film is reformed with VUV light or the like, the gas barrier property is increased over time. Was found to deteriorate.

  It has also been found that this tendency becomes more prominent when the substrate (also referred to as a support) is made of glass into plastic.

  It is presumed that the gas barrier property deteriorates as a result of the increased affinity with water vapor due to the Si—OH groups contained in a large amount in the film.

  That is, according to a preferred embodiment of the present invention, it is important to eliminate as much as possible Si-OH groups present in the coating film during the modification treatment, and the water content in the coating film is reduced before the modification treatment. Thereby, the production | generation of Si-OH can be suppressed.

  Once the coating liquid and coating film containing polysilazane are exposed to a high humidity state, it is difficult to dehydrate from the coating liquid and coating film, and furthermore, the hydrolysis reaction starts to proceed, Storage or handling in an atmosphere with a dew point of 10 ° C. (25 ° C., 39% RH) or less, more preferably an atmosphere with a dew point of 8 ° C. (25 ° C., 10% RH) or less from the coating solution adjustment stage to the end of the modification treatment This makes it possible to suppress the formation of Si—OH in the film. More preferably, the dew point is −31 degrees (25 ° C., 1% RH) or less. In addition, when the thin film is formed, the surface area per volume of the coating film increases and the influence of water vapor increases, so it is particularly important to control the atmospheric humidity between the application of the polysilazane-containing solution and the modification treatment by VUV light irradiation. It is.

  The dew point temperature is an index representing the amount of moisture in the atmosphere, and the dew point temperature is a temperature at which condensation starts when air containing water vapor is cooled.

  It can be obtained by measuring directly with a dew point thermometer, or by obtaining the water vapor pressure from the temperature and relative humidity and obtaining the temperature at which the water vapor pressure is the saturated water vapor pressure. When the relative humidity is 100%, the current temperature is directly at the dew point temperature.

[Concentration of reaction catalyst contained in coating solution containing polysilazane]
In the solution containing polysilazane according to the present invention (also referred to as coating solution), the reaction catalyst is preferably contained in a range of 5% by mass or less with respect to the mass of polysilazane, if necessary.

  Although there is a close relationship with the humidity control during application of a solution containing polysilazane (coating solution), the amount of reaction catalyst added relative to the mass of polysilazane is appropriate in order to appropriately promote hydrolysis and dehydration condensation. By adjusting the content to 5% by mass or less, a significant change in the generation rate of Si—OH groups can be prevented, and an excessive Si—OH group can effectively prevent the film from changing with time. be able to.

  In addition, when sufficient energy is applied to break molecular bonds such as vacuum ultraviolet (VUV) irradiation, amine-based catalysts may decompose and evaporate. Impurities and voids are included in the material film, which may cause problems such as deterioration of barrier properties.

  From such a viewpoint, in the present invention, it is preferable to adjust the content of the reaction catalyst with respect to polysilazane to 5% by mass or less in order to avoid excessive silanol production by the catalyst, decrease in film density, and increase in film defects. More preferably, from the viewpoint of suppressing the generation of Si—OH, the coating liquid containing polysilazane preferably contains no reaction catalyst (also referred to as no reaction catalyst added).

  Here, that the coating liquid containing polysilazane does not contain a reaction catalyst means that the content of the reaction catalyst in the coating liquid is in the range of 0% by mass to 0.0001% by mass.

[Modification treatment of coating film containing polysilazane using vacuum ultraviolet ray (VUV)]
The gas barrier layer according to the present invention is modified by a method of irradiating a coating film containing polysilazane with vacuum ultraviolet rays (VUV) after coating a solution containing polysilazane on a substrate.

  By this vacuum ultraviolet ray (VUV light) irradiation, the molecular bond of polysilazane is broken, and even a small amount of oxygen in the film or atmosphere can be efficiently converted into ozone or active oxygen. Ceramicization (silica modification) is promoted, and the resulting ceramic film becomes denser.

  Irradiation with vacuum ultraviolet rays (VUV) according to the present invention is effective at any time point as long as it is after the production of a coating film containing polysilazane.

  Specifically, vacuum ultraviolet radiation (VUV light) of 100 nm to 200 nm is used for the vacuum ultraviolet irradiation according to the present invention.

  In the irradiation with vacuum ultraviolet rays, the irradiation intensity or irradiation time is set within a range in which the substrate carrying the coating film to be irradiated is not damaged.

Taking the case of using a plastic film as a base material as an example, the substrate as a vacuum ultraviolet maximum irradiation strength of the substrate (support) surface is ^{10mW / cm 2 ~300mW / cm 2} - sets the ramp distance And irradiation for 0.1 seconds to 10 minutes, preferably 0.5 seconds to 3 minutes.

  The base material (also referred to as a support) according to the present invention will be described in detail later.

  A commercially available device (for example, manufactured by USHIO INC.) Can be used as the vacuum ultraviolet irradiation device.

  Vacuum ultraviolet (VUV) irradiation can be applied to both batch processing and continuous processing, and can be appropriately selected depending on the shape of the substrate to be coated.

  For example, in the case of batch processing, a substrate (eg, silicon wafer) having a coating film containing polysilazane on the surface (eg, a silicon wafer) can be processed in a vacuum ultraviolet ray baking furnace equipped with a vacuum ultraviolet ray source.

  The vacuum ultraviolet baking furnace itself is generally known, and for example, Ushio Electric Co., Ltd. can be used. In addition, when the base material having a polysilazane coating film on the surface is in the form of a long film, vacuum ultraviolet rays are continuously irradiated in the drying zone equipped with the vacuum ultraviolet ray generation source as described above while being conveyed. Can be made into ceramics.

  Since the vacuum ultraviolet light is larger than the interatomic bonding force of most substances, it can be preferably used because the bonding of atoms can be cut directly by the action of only photons called photon processes. By using this action, the reforming process can be efficiently performed at a low temperature without requiring hydrolysis.

  As a vacuum ultraviolet light source required for this, a rare gas excimer lamp is preferably used.

1. Excimer light emission is called an inert gas because atoms of rare gases such as Xe, Kr, Ar, and Ne do not form a molecule by chemically bonding. However, noble gas atoms (excited atoms) that have gained energy by discharge or the like can be combined with other atoms to form molecules. When the rare gas is xenon,
e + Xe → Xe ^*
Xe ^* + 2Xe → Xe ₂ ^* + Xe
Xe ₂ ^* → Xe + Xe + hν (172 nm)
Thus, when the excited excimer molecule Xe ₂ ^* transitions to the ground state, excimer light of 172 nm is emitted. A feature of the excimer lamp is that the radiation is concentrated on one wavelength, and since only the necessary light is not emitted, the efficiency is high.

  Further, since no extra light is emitted, the temperature of the object can be kept low. Furthermore, since no time is required for starting and restarting, instantaneous lighting and blinking are possible.

  In order to obtain excimer light emission, a method using dielectric barrier discharge is known. Dielectric barrier discharge refers to lightning generated in a gas space by arranging a gas space between both electrodes via a dielectric (transparent quartz in the case of an excimer lamp) and applying a high frequency high voltage of several tens of kHz to the electrode. When the micro discharge streamer reaches the tube wall (dielectric) in a similar very thin discharge called micro discharge, the electric charge accumulates on the dielectric surface, and the micro discharge disappears.

  This micro discharge spreads over the entire tube wall, and is a discharge that is repeatedly generated and extinguished. For this reason, flickering of light that can be seen with the naked eye occurs.

  Moreover, since a very high temperature streamer reaches a pipe wall directly locally, there is a possibility that deterioration of the pipe wall may be accelerated.

  As a method for efficiently obtaining excimer light emission, electrodeless field discharge can be used in addition to dielectric barrier discharge. Electrodeless electric field discharge by capacitive coupling, also called RF discharge. The lamp and electrodes and their arrangement may be basically the same as those of dielectric barrier discharge, but the high frequency applied between the two electrodes is lit at several MHz.

  In the electrodeless field discharge, since a spatially or temporally uniform discharge can be obtained in this way, a long-life lamp without flickering can be obtained.

  In the case of dielectric barrier discharge, micro discharge occurs only between the electrodes, so the outer electrode covers the entire outer surface and allows light to pass through in order to extract light to the outside in order to discharge in the entire discharge space. Must.

  For this reason, an electrode in which a fine metal wire is formed in a net shape is used. Since this electrode uses as thin a line as possible so as not to block light, it is easily damaged by ozone generated by vacuum ultraviolet light in an oxygen atmosphere.

  In order to prevent this, it is necessary to provide an atmosphere of an inert gas such as nitrogen around the lamp, that is, the inside of the irradiation apparatus, and provide a synthetic quartz window to extract the irradiation light. However, synthetic quartz windows are not only expensive consumables, but also cause light loss.

  Since the double cylindrical lamp has an outer diameter of about 25 mm, the difference in distance to the irradiation surface cannot be ignored between the position directly below the lamp axis and the side surface of the lamp, resulting in a large difference in illuminance. Therefore, even if the lamps are arranged in close contact, a uniform illuminance distribution cannot be obtained. If the irradiation device is provided with a synthetic quartz window, the distance in the oxygen atmosphere can be made uniform, and a uniform illuminance distribution can be obtained.

  When electrodeless field discharge is used, it is not necessary to make the external electrodes mesh. The glow discharge spreads over the entire discharge space simply by providing an external electrode on a part of the outer surface of the lamp.

  As the external electrode, an electrode that also serves as a light reflector made of an aluminum block is usually used on the back of the lamp. However, since the outer diameter of the lamp is as large as in the case of the dielectric barrier discharge, synthetic quartz is required to obtain a uniform illuminance distribution.

  The biggest feature of the capillary excimer lamp is its simple structure. The quartz tube is closed at both ends, and only gas for excimer light emission is sealed inside. Therefore, a very inexpensive light source can be provided.

  Since the double cylindrical lamp is processed by connecting both ends of the inner and outer tubes, it is more likely to be damaged during handling and transportation than a thin tube lamp. The outer diameter of the tube of the thin tube lamp is preferably about 6 nm to 12 mm from the viewpoint of suppressing the need for a high voltage for starting.

  As the form of discharge, either dielectric barrier discharge or electrodeless field discharge can be used. The electrode may have a flat surface in contact with the lamp, but if the shape is matched to the curved surface of the lamp, the lamp can be firmly fixed and the discharge is more stable when the electrode is in close contact with the lamp. Also, if the curved surface is made into a mirror surface with aluminum, it also becomes a light reflector.

  Excimer lamps are commercially available from a plurality of companies, and each has a different lamp structure, lamp unit design, maximum irradiation intensity, etc., but can be appropriately selected according to the purpose.

  The Xe excimer lamp is excellent in luminous efficiency because it emits ultraviolet light having a short wavelength of 172 nm at a single wavelength.

  Since this light has a large oxygen absorption coefficient, it can generate radical oxygen atom species and ozone at a high concentration with a very small amount of oxygen.

  In addition, it is known that the energy of light having a short wavelength of 172 nm for dissociating the bonds of organic substances has high ability.

  Due to the high energy of the active oxygen, ozone and ultraviolet radiation, the polysilazane layer can be modified in a short time.

  Therefore, compared with low-pressure mercury lamps with wavelengths of 185 nm and 254 nm and plasma cleaning, it is possible to shorten the process time associated with high throughput, reduce the equipment area, and irradiate organic materials and plastic substrates that are easily damaged by heat. .

  Since the excimer lamp has high light generation efficiency, it can be lit with low power. In addition, light with a long wavelength that causes a temperature increase due to light is not emitted, and energy of a single wavelength is irradiated in the ultraviolet region, so that an increase in the surface temperature of the object to be fired is suppressed. For this reason, it is suitable for flexible film materials such as PET that are easily affected by heat.

[Vacuum UV irradiation intensity]
The method of manufacturing a gas barrier film of the present invention, the irradiation step of the vacuum ultraviolet (VUV), if necessary, the step of vacuum ultraviolet maximum radiation intensity is performed in the range of ^{100mW / cm 2 ~200mW / cm 2} ( the present invention Then, this treatment is referred to as high irradiation intensity treatment) or a step of applying vacuum ultraviolet ray (VUV) irradiation with a maximum ultraviolet ray ultraviolet ray irradiation intensity of less than 100 mW / cm ^{2 on} the coating film surface (in the present invention, this is a low irradiation intensity treatment). Process) is used.

[High irradiation intensity treatment and maximum irradiation intensity]
If the irradiation intensity is high, the probability that the photons and chemical bonds in the polysilazane collide increases, and the modification reaction can be shortened. In addition, since the number of photons penetrating into the interior also increases, it is possible to increase the modified film thickness or improve the film quality (densification). However, if the irradiation time is too long, the flatness may be deteriorated and other materials of the barrier film may be damaged. In general, the progress of the reaction is determined by the integrated light quantity expressed by the product of the irradiation intensity and the irradiation time. However, the irradiation intensity is different for materials that have the same composition but have various structural forms, such as silicon oxide. The absolute value of may be important.

Therefore, in the present invention, in the VUV irradiation process, from the viewpoint of suppressing both damage to the substrate and damage to the members of the lamp and the lamp unit, increasing the reforming efficiency, and improving both the gas barrier performance, at least once it is preferred to perform the modification process which gives the maximum irradiation intensity of ^{100mW / cm 2 ~200mW / cm 2} .

[Low irradiation intensity treatment]
In the present invention, in addition to high illumination intensity of 100mW ^/ cm ² ~200mW ^/ cm 2 of the VUV light irradiation step, preferably comprises a 100 mW / cm ² below the lower irradiation intensity step. While high-intensity VUV light efficiently modifies the polysilazane film in a short time, on the surface of the film that is most affected by the atmosphere and is directly exposed to VUV light, high-quality SiO ₂ formed with great effort is obtained. A structural defect may be formed as a result of making a hydrophilic state like a so-called surface treatment and proceeding with the reforming reaction rapidly.

In order to repair such a film defect of the gas barrier film, the present inventors have intensively studied and found that it can be repaired by irradiating with low illuminance VUV light of less than 100 mW / cm ² .

On the other hand, low illuminance VUV light of less than 100 mW / cm ² can form a uniform film to some extent because of the slow modification rate, and a certain degree of uniform structure is formed in advance before the high illuminance process. Thus, the modification time at high illuminance can be shortened, and surface hydrophilicity and structural defect formation can be suppressed.

Therefore, in view of the above, it is preferable to irradiate VUV light with low illuminance with an irradiation intensity of 10 mW / cm ^{2 to} less than 100 mW / cm ² at least once in addition to the high illuminance step.

As the illuminance of the low illuminance step, more preferably to a ^{30mW / cm 2 ~80mW / cm 2} . The timing of irradiating the low illuminance VUV may be either before or after the high illuminance VUV irradiation, or both.

[Vacuum ultraviolet (VUV) irradiation time]
The irradiation time of the vacuum ultraviolet ray (VUV) according to the present invention can be arbitrarily set in both the high illuminance process and the low illuminance process, but the viewpoint of substrate damage and film defect generation and the viewpoint of reducing the variation in gas barrier performance. Therefore, the irradiation time in the high illuminance step is preferably from 0.1 second to 3 minutes, and more preferably from 0.5 second to 1 minute.

  In the low illuminance process, it is preferable that the irradiation time is equal to or slightly longer than that in the high illuminance process from the viewpoint of pre-structure formation and defect repair. That is, it is preferably 0.5 seconds to 10 minutes, and more preferably 1 second to 2 minutes.

[Oxygen concentration during vacuum ultraviolet (VUV) irradiation]
The oxygen concentration at the time of vacuum ultraviolet ray (VUV) irradiation according to the present invention is preferably 500 ppm to 10000 ppm (1%), more preferably 1000 ppm to 5000 ppm.

  By adjusting the oxygen concentration within the above range, it is possible to prevent the formation of an oxygen-excess gas barrier film and to prevent deterioration of gas barrier properties, as will be described later.

  In addition, the air replacement time is prevented from becoming unnecessarily long. At the same time, when continuous production such as roll-to-roll is performed, the amount of air (oxygen) entrained in the vacuum ultraviolet (VUV) irradiation chamber by web transport Increase in the oxygen concentration) and the oxygen concentration cannot be adjusted.

  Further, according to the study by the present inventors, in the polysilazane-containing coating film, oxygen and a small amount of water are mixed at the time of coating, and there are also adsorbed oxygen and adsorbed water on the support other than the coating film, It was found that there are enough oxygen sources to supply oxygen required for the reforming reaction without introducing oxygen into the inside.

  Rather, when the VUV light is irradiated in an atmosphere containing a large amount of oxygen gas (a few percent level), the gas barrier film after the modification has an excessive oxygen structure and the gas barrier properties deteriorate.

  Further, as described above, 172 nm vacuum ultraviolet rays (VUV) are absorbed by oxygen and the amount of light at 172 nm reaching the film surface is reduced, so that the efficiency of the light treatment is likely to be lowered.

  That is, it is preferable to perform the modification treatment in a state where the VUV light efficiently reaches the coating film in a state where the oxygen concentration is as low as possible at the time of vacuum ultraviolet (VUVJ) irradiation.

  This is a significant difference between the method of depositing and producing a film with a composition ratio controlled in advance, such as CVD and the like, and the method of preparing a precursor film by coating and a modification process. This is unique to the application method below.

  As a gas other than oxygen at the time of irradiation with vacuum ultraviolet rays (VUV), a dry inert gas is preferable, and dry nitrogen gas is particularly preferable from the viewpoint of cost. The oxygen concentration can be adjusted by measuring the flow rate of oxygen gas and inert gas introduced into the irradiation chamber and changing the flow rate ratio.

[Heat treatment before, during or after modification of polysilazane coating]
In the present invention, after the polysilazane coating film is formed, the polysilazane coating film is heated to 150 ° C. or more at least one time before the modification treatment, during the modification treatment, or after the modification treatment. It is preferable to carry out. More preferably, the temperature of the heat treatment is 200 ° C. or higher and 300 ° C. or lower. This heat treatment is most preferably performed after the modification. In order to perform such heat treatment, it is desirable to use a substrate having a Tg of 150 ° C. to 310 ° C. from the viewpoint of preventing damage to the substrate. In addition, it is preferable to use a material having a Tg of 200 ° C. or higher in the intermediate layer.

[Coating film containing polysilazane]
The coating film containing polysilazane according to the present invention will be described.

  The coating film containing polysilazane according to the present invention is produced by wet coating a coating solution containing at least one polysilazane compound on a substrate.

  Any appropriate method can be adopted as a coating method. Specific examples include a spin coating method, a roll coating method, a flow coating method, an ink jet method, a spray coating method, a printing method, a dip coating method, a casting film forming method, a bar coating method, and a gravure printing method. The coating thickness can be appropriately set according to the purpose. For example, the coating thickness can be set so that the thickness after drying is preferably about 1 nm to 100 μm, more preferably about 10 nm to 10 μm, and most preferably about 10 nm to 1 μm.

The “polysilazane” used in the present invention is a polymer having a silicon-nitrogen bond, and includes SiO ₂ , Si ₃ N ₄ and both intermediate solid solutions SiO _x N _{y made of} Si—N, Si—H, N—H, or the like. Such as a ceramic precursor inorganic polymer.

  In order not to damage the film base material, it is converted to silica by being ceramicized at a relatively low temperature as represented by the following general formula (1) described in JP-A-8-112879. Compounds are preferred.

General formula (1)
—Si (R ₁ ) (R ₂ ) —N (R ₃ ) —
In the formula, each of R ₁ , R ₂ and R ₃ represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an alkylsilyl group, an alkylamino group or an alkoxy group.

In the present invention, perhydropolysilazane (also referred to as PHPS) in which all of R ₁ , R _2, and R ₃ are hydrogen atoms is particularly preferable from the viewpoint of denseness as a gas barrier layer (also simply referred to as a barrier film) to be obtained. preferable.

  On the other hand, the organopolysilazane in which the hydrogen part bonded to Si is partially substituted with an alkyl group or the like has an alkyl group such as a methyl group, so that the adhesion to the base substrate is improved and the polysilazane is hard and brittle. The ceramic film can be toughened, and there is an advantage that generation of cracks can be suppressed even when the film thickness is increased. These perhydropolysilazane and organopolysilazane may be appropriately selected according to the application, and may be used in combination.

  Perhydropolysilazane is presumed to have a linear structure and a ring structure centered on 6- and 8-membered rings. The molecular weight is about 600 to 2000 (polystyrene conversion) in terms of number average molecular weight (Mn), is a liquid or solid substance, and varies depending on the molecular weight. These are marketed in a solution state dissolved in an organic solvent, and the commercially available product can be used as it is as a polysilazane-containing coating solution.

  As another example of polysilazane which is ceramicized at low temperature, a silicon alkoxide-added polysilazane obtained by reacting the polysilazane represented by the general formula (1) with a silicon alkoxide (for example, JP-A-5-23827), glycidol A glycidol-added polysilazane obtained by reacting an alcohol (for example, JP-A-6-122852), an alcohol-added polysilazane obtained by reacting an alcohol (for example, JP-A-6-240208), and a metal carboxylate Metal carboxylate-added polysilazane (for example, JP-A-6-299118) obtained, and acetylacetonate complex-added polysilazane (for example, JP-A-6-306329) obtained by reacting a metal-containing acetylacetonate complex. ), Added metal fine particles And metal fine particles added polysilazane obtained (e.g., JP-A-7-196986 JP), and the like.

  As an organic solvent for preparing a liquid containing polysilazane, it is not preferable to use an alcohol or water-containing one that easily reacts with polysilazane. Specifically, hydrocarbon solvents such as aliphatic hydrocarbons, alicyclic hydrocarbons and aromatic hydrocarbons, ethers such as halogenated hydrocarbon solvents, aliphatic ethers and alicyclic ethers can be used. Specific examples include hydrocarbons such as pentane, hexane, cyclohexane, toluene, xylene, solvesso and turben, halogen hydrocarbons such as methylene chloride and trichloroethane, and ethers such as dibutyl ether, dioxane and tetrahydrofuran. These solvents may be selected according to purposes such as the solubility of polysilazane and the evaporation rate of the solvent, and a plurality of solvents may be mixed.

  The polysilazane concentration in the polysilazane-containing coating solution is about 0.2% by mass to 35% by mass, although it varies depending on the target silica film thickness and the pot life of the coating solution.

  The organic polysilazane may be a derivative in which the hydrogen part bonded to Si is partially substituted with an alkyl group or the like. By having an alkyl group, especially a methyl group having the smallest molecular weight, the adhesion to the base material can be improved, and the hard and brittle silica film can be toughened, and even if the film thickness is increased, cracks are not generated. Occurrence is suppressed.

  In order to promote the modification to a silicon oxide compound, an amine or metal catalyst may be added. Specific examples include Aquamica NAX120-20, NN110, NN310, NN320, NL110A, NL120A, NL150A, NP110, NP140, and SP140 manufactured by AZ Electronic Materials.

[Process for forming polysilazane film]
The polysilazane film according to the present invention preferably has moisture removed during the modification treatment. This is because the generation of Si—OH groups can be prevented as much as possible by adjusting the environment during the reforming process to a low dew point temperature of 0 ° C. or less.

  The following environment during the reforming process will be described.

  As a method for removing moisture in the polysilazane film, a mode in which a low humidity environment is maintained is preferable. Since the humidity in the low humidity environment varies depending on the temperature, a preferable form of the relationship between temperature and humidity is shown by the dew point temperature.

  A preferable dew point temperature is 0 ° C. or less, a more preferable dew point temperature is −8 degrees (temperature 25 degrees / humidity 10%) or less, and a more preferable dew point temperature is (temperature 25 degrees / humidity 1%) −31 degrees or less, The maintained time varies depending on the thickness of the polysilazane film. Under the condition of a polysilazane film thickness of 1.0 μm or less, the preferable dew point temperature is −8 ° C. or less, and the maintained time is 5 minutes or more.

  Moreover, you may dry under reduced pressure in order to make it easy to remove a water | moisture content. The pressure in the vacuum drying can be selected from normal pressure to 0.1 MPa.

  The polysilazane film according to the present invention is preferably subjected to a modification treatment while maintaining its state even after moisture is removed.

(Water content of polysilazane film)
The water content of the polysilazane film according to the present invention can be detected by the following analysis method.
Headspace-gas chromatograph / mass spectrometry apparatus: HP6890GC / HP5973MSD
Oven: 40 ° C (2 minutes) → 10 ° C / minute → 150 ° C
Column: DB-624 (0.25 mmid × 30 m)
Inlet: 230 ° C
Detector: SIM m / z = 18
HS condition: 190 ° C., 30 minutes The water content in the polysilazane film according to the present invention is defined as a value obtained by dividing the water content obtained by the above analysis method by the volume of the polysilazane film. Preferably it is 0.1% or less. A more preferable moisture content is 0.01% or less (below the detection limit).

[Base material (also called support)]
The substrate (support) according to the present invention will be described.

  The base material (support) of the gas barrier film of the present invention is made of an organic material capable of holding a gas barrier film having a barrier property described later, and has a glass transition temperature (Tg) of 150 ° C. or higher. If it is, it will not be specifically limited.

  For example, each resin film such as polycarbonate (PC), polyarylate, aromatic polyamide, polyether ether ketone, polysulfone, polyether sulfone, polyimide, polyetherimide, and silsesquioxane having an organic-inorganic hybrid structure is used as a basic skeleton. And a heat-resistant transparent film (product name: Sila-DEC, manufactured by Chisso Corporation), and a resin film formed by laminating two or more layers of the resin.

  Further, in terms of optical transparency, heat resistance, adhesion to an inorganic layer, and a gas barrier layer, a heat-resistant transparent film or a polyimide based on a silsesquioxane having an organic-inorganic hybrid structure is preferably used. it can. By using such a heat-resistant substrate (ex. Tg> 200 ° C.), a high-temperature treatment in the device manufacturing process becomes possible, and a transparent conductive layer or the like necessary for increasing the area of the device and improving the operation efficiency of the device The resistance of the pattern layer can be reduced by the metal nanoparticles. That is, the initial characteristics of the device can be greatly improved. The thickness of the support is preferably about 5 μm to 500 μm, more preferably 25 μm to 250 μm.

  Moreover, it is preferable that the base material (support body) which concerns on this invention is transparent.

  Here, the base material being transparent means that the light transmittance of visible light (400 nm to 700 nm) is 80% or more.

  Since the base material (support) is transparent and the layer formed on the support is also transparent, a transparent gas barrier film can be obtained. Therefore, a transparent substrate such as an organic EL element can be used. This is because it becomes possible.

  The base material (also referred to as a support) according to the present invention can be produced by a conventionally known general method. For example, an unstretched substrate that is substantially amorphous and not oriented can be produced by melting a resin as a material with an extruder, extruding it with an annular die or a T-die, and quenching.

  Further, the unstretched base material is subjected to a known method such as uniaxial stretching, tenter-type sequential biaxial stretching, tenter-type simultaneous biaxial stretching, tubular simultaneous biaxial stretching, etc. A stretched substrate (also referred to as a stretched support) can be produced by stretching in the direction perpendicular to the flow direction of the substrate (horizontal axis).

  The draw ratio in this case can be appropriately selected according to the resin used as the raw material of the substrate (support), but is preferably 2 to 10 times in the vertical axis direction and the horizontal axis direction, respectively.

  Furthermore, in order to improve the dimensional stability of the substrate in the stretched film, it is preferable to perform a relaxation treatment after stretching.

  Moreover, in the base material (it is also called a support body) which concerns on this invention, you may corona-process before producing a coating film.

[Middle layer]
The intermediate layer according to the present invention is not particularly limited as long as it has a layer structure, and includes, for example, an anchor coat layer, a smooth layer, a bleed-out layer, and the like. The intermediate layer preferably has a heat resistant material. By using a heat-resistant material for the intermediate layer, it is possible to suppress discoloration of the intermediate layer and peeling from the base material and / or the first barrier layer even when heating at a high temperature of 150 ° C. or higher. is there. Furthermore, a thermosetting material may be used, and by allowing high-temperature heating at 150 ° C. or higher, interlayer adhesion with the barrier layer is improved, and gas barrier performance is also improved. When the thermosetting material is used, it is presumed that the intermediate layer changes to a denser film and contributes to the improvement of gas barrier properties, and at the same time, the polymerization reaction proceeds at the interface with the barrier layer and the adhesion is improved. Specific examples of heat-resistant materials or thermosetting materials include Tutprom series (Organic polysilazane) manufactured by Clariant, SP COAT heat-resistant clear paint manufactured by Ceramic Coat, Nano Hybrid Silicone manufactured by Adeka, DIC Corporation Unidic V-8000 series manufactured by EPICLON EXA-4710 (ultra-high heat resistant epoxy resin), various silicone resins manufactured by Shin-Etsu Chemical Co., Ltd., inorganic / organic nanocomposite material SSG coat manufactured by Nittobo Co., Ltd., acrylic polyol and isocyanate prepolymer Examples thereof include thermosetting urethane resins composed of polymers, phenol resins, urea melamine resins, epoxy resins, unsaturated polyester resins, and silicon resins. Among these, an epoxy resin is particularly preferable.

(Anchor coat layer)
On the surface of the support according to the present invention, an anchor coat layer may be disposed as one of the intermediate layers for the purpose of improving the adhesion with the coating film. Examples of the anchor coating agent used in this anchor coat layer include polyester resin, isocyanate resin, urethane resin, acrylic resin, ethylene vinyl alcohol resin, vinyl modified resin, epoxy resin, modified styrene resin, modified silicon resin, and alkyl titanate. One or two or more can be used in combination.

Conventionally known additives can be added to these anchor coating agents. The above-mentioned anchor coating agent is coated on the support by a known method such as roll coating, gravure coating, knife coating, dip coating, spray coating, etc., and anchor coating is performed by drying and removing the solvent, diluent, etc. be able to. The application amount of the anchor coating agent is preferably about 0.1 g / m ^{2 to} 5 g / m ² (dry state).

(Smooth layer)
The gas barrier film of the present invention may have a smooth layer as an intermediate layer.

  The smooth layer used in the present invention flattens the rough surface of the transparent resin film support on which protrusions and the like are present, or has irregularities and pinholes generated in the transparent inorganic compound layer due to the protrusions on the transparent resin film support. Provided to fill and planarize. Such a smooth layer is basically produced by curing the above-mentioned thermosetting resin or photosensitive resin.

  As the photosensitive resin of the smooth layer, for example, a resin composition containing an acrylate compound having a radical reactive unsaturated compound, a resin composition containing an acrylate compound and a mercapto compound having a thiol group, epoxy acrylate, urethane acrylate, Examples thereof include a resin composition in which a polyfunctional acrylate monomer such as polyester acrylate, polyether acrylate, polyethylene glycol acrylate, or glycerol methacrylate is dissolved. It is also possible to use an arbitrary mixture of the above resin compositions, and any photosensitive resin containing a reactive monomer having one or more photopolymerizable unsaturated bonds in the molecule can be used. There are no particular restrictions.

  Examples of reactive monomers having at least one photopolymerizable unsaturated bond in the molecule include methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, tert-butyl acrylate, and n-pentyl. Acrylate, n-hexyl acrylate, 2-ethylhexyl acrylate, n-octyl acrylate, n-decyl acrylate, hydroxyethyl acrylate, hydroxypropyl acrylate, allyl acrylate, benzyl acrylate, butoxyethyl acrylate, butoxyethylene glycol acrylate, cyclohexyl acrylate, dicyclo Pentanyl acrylate, 2-ethylhexyl acrylate, glycerol acrylate, glycy Acrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, isobornyl acrylate, isodexyl acrylate, isooctyl acrylate, lauryl acrylate, 2-methoxyethyl acrylate, methoxyethylene glycol acrylate, phenoxyethyl acrylate, stearyl acrylate, Ethylene glycol diacrylate, diethylene glycol diacrylate, 1,4-butanediol diacrylate, 1,5-pentanediol diacrylate, 1,6-hexadiol diacrylate, 1,3-propanediol acrylate, 1,4-cyclohexanediol Diacrylate, 2,2-dimethylolpropane diacrylate, glycerol diacrylate, tripropylene Glycol diacrylate, glycerol triacrylate, trimethylolpropane triacrylate, polyoxyethyltrimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, ethylene oxide modified pentaerythritol triacrylate, ethylene oxide modified pentaerythritol tetraacrylate, propion Oxide modified pentaerythritol triacrylate, propion oxide modified pentaerythritol tetraacrylate, triethylene glycol diacrylate, polyoxypropyltrimethylolpropane triacrylate, butylene glycol diacrylate, 1,2,4-butanediol triacrylate, 2,2, 4-to Limethyl-1,3-pentadiol diacrylate, diallyl fumarate, 1,10-decanediol dimethyl acrylate, pentaerythritol hexaacrylate, and acrylate replaced with acrylate, γ-methacryloxypropyltrimethoxysilane, Examples thereof include 1-vinyl-2-pyrrolidone and the like. Said reactive monomer can be used as a 1 type, 2 or more types of mixture, or a mixture with another compound.

  The composition of the photosensitive resin contains a photopolymerization initiator. Examples of the photopolymerization initiator include benzophenone, methyl o-benzoylbenzoate, 4,4-bis (dimethylamine) benzophenone, 4,4-bis (diethylamine) benzophenone, α-aminoacetophenone, 4,4-dichlorobenzophenone, 4 -Benzoyl-4-methyldiphenyl ketone, dibenzyl ketone, fluorenone, 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methylpropiophenone, p-tert-butyl Dichloroacetophenone, thioxanthone, 2-methylthioxanthone, 2-chlorothioxanthone, 2-isopropylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, benzylmethoxyethyl acetal, benzoin methyl ether Ter, benzoin butyl ether, anthraquinone, 2-t-butylanthraquinone, 2-amylanthraquinone, β-chloroanthraquinone, anthrone, benzanthrone, dibenzsuberone, methyleneanthrone, 4-azidobenzylacetophenone, 2,6-bis (p-azidobenzylidene) ) Cyclohexane, 2,6-bis (p-azidobenzylidene) -4-methylcyclohexanone, 2-phenyl-1,2-butadion-2- (o-methoxycarbonyl) oxime, 1-phenyl-propanedione-2- ( o-ethoxycarbonyl) oxime, 1,3-diphenyl-propanetrione-2- (o-ethoxycarbonyl) oxime, 1-phenyl-3-ethoxy-propanetrione-2- (o-benzoyl) oxime, Michlerketo 2-methyl [4- (methylthio) phenyl] -2-monoforino-1-propane, 2-benzyl-2-dimethylamino-1- (4-monoforinophenyl) -butanone-1, naphthalenesulfonyl chloride, quinoline Sulfonyl chloride, n-phenylthioacridone, 4,4-azobisisobutyronitrile, diphenyl disulfide, benzthiazole disulfide, triphenylphosphine, camphorquinone, carbon tetrabromide, tribromophenyl sulfone, benzoin peroxide, eosin And a combination of a photoreductive dye such as methylene blue and a reducing agent such as ascorbic acid or triethanolamine. These photopolymerization initiators can be used alone or in combination of two or more.

  The method for producing the smooth layer is not particularly limited, but it is preferably produced by a wet coating method such as a spin coating method, a spray method, a blade coating method, or a dip method, or a dry coating method such as an evaporation method.

  In the production of the smooth layer, additives such as an antioxidant, an ultraviolet absorber, and a plasticizer can be added to the above-described photosensitive resin as necessary. In addition, regardless of the position where the smooth layer is laminated, in any smooth layer, an appropriate resin or additive may be used in order to improve the film formability and prevent the generation of pinholes in the film.

  Solvents used when producing a smooth layer using a coating solution in which a photosensitive resin is dissolved or dispersed in a solvent include alcohols such as methanol, ethanol, n-propanol, isopropanol, ethylene glycol, and propylene glycol, α -Or terpenes such as β-terpineol, etc., ketones such as acetone, methyl ethyl ketone, cyclohexanone, N-methyl-2-pyrrolidone, diethyl ketone, 2-heptanone, 4-heptanone, aroma such as toluene, xylene, tetramethylbenzene Group hydrocarbons, cellosolve, methyl cellosolve, ethyl cellosolve, carbitol, methyl carbitol, ethyl carbitol, butyl carbitol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropiate Glycol ethers such as lenglycol monomethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, ethyl acetate, butyl acetate, cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, carbitol acetate, Acetic esters such as ethyl carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, 2-methoxyethyl acetate, cyclohexyl acetate, 2-ethoxyethyl acetate, 3-methoxybutyl acetate, diethylene glycol Dialkyl ether, dipropylene glycol Alkyl ethers, ethyl 3-ethoxypropionate, methyl benzoate, N, N- dimethylacetamide, N, may be mentioned N- dimethylformamide.

  The smoothness of the smooth layer is a value expressed by the surface roughness specified by JIS B 0601, and the maximum cross-sectional height Rt (p) is preferably 10 nm or more and 30 nm or less. If the value is smaller than this range, the coating property is impaired when the coating means comes into contact with the surface of the smooth layer in the coating method such as a wire bar or wireless bar at the stage of coating the silicon compound described later. There is. Moreover, when larger than this range, it may become difficult to smooth the unevenness | corrugation after apply | coating a silicon compound.

  The surface roughness is calculated from an uneven cross-sectional curve continuously measured by an AFM (Atomic Force Microscope) with a detector having a stylus having a minimum tip radius, and the measurement direction is several tens by the stylus having a minimum tip radius. It is the roughness related to the amplitude of fine irregularities measured in a section of μm many times.

  One preferred embodiment includes reactive silica particles (hereinafter also simply referred to as “reactive silica particles”) in which a photosensitive group having photopolymerization reactivity is introduced on the surface of the above-described photosensitive resin.

  Here, examples of the photopolymerizable photosensitive group include polymerizable unsaturated groups represented by a (meth) acryloyloxy group. The photosensitive resin contains a photopolymerizable photosensitive group introduced on the surface of the reactive silica particles and a compound capable of photopolymerization, for example, an unsaturated organic compound having a polymerizable unsaturated group. It may be.

  Further, as the photosensitive resin, a resin whose solid content is prepared by appropriately mixing a general-purpose diluting solvent with such reactive silica particles or an unsaturated organic compound having a polymerizable unsaturated group can be used. .

  Here, the average particle size of the reactive silica particles is preferably 0.001 μm to 0.1 μm. By setting the average particle size in such a range, the antiglare property and the resolution, which are the effects of the present invention, can be obtained by using in combination with a matting agent composed of inorganic particles having an average particle size of 1 to 10 μm described later. It becomes easy to produce a smooth layer having both optical properties satisfying a good balance and hard coat properties.

  From the viewpoint of making it easier to obtain such an effect, it is more preferable to use an average particle diameter of 0.001 μm to 0.01 μm. The smooth layer used in the present invention preferably contains 20% or more and 60% or less of the inorganic particles as described above as a mass ratio. Addition of 20% or more improves adhesion with the gas barrier layer. On the other hand, if it exceeds 60%, the film may be bent, cracks may occur when heat treatment is performed, and optical properties such as transparency and refractive index of the gas barrier film may be affected.

  In the present invention, a polymerizable unsaturated group-modified hydrolyzable silane is chemically bonded to a silica particle by generating a silyloxy group by a hydrolysis reaction of a hydrolyzable silyl group. It can be used as reactive silica particles.

  Examples of the hydrolyzable silyl group include a carboxylylate silyl group such as an alkoxylyl group and an acetoxysilyl group, a halogenated silyl group such as a chlorosilyl group, an aminosilyl group, an oxime silyl group, and a hydridosilyl group.

  Examples of the polymerizable unsaturated group include acryloyloxy group, methacryloyloxy group, vinyl group, propenyl group, butadienyl group, styryl group, ethynyl group, cinnamoyl group, malate group, and acrylamide group.

  The thickness of the smooth layer in the present invention is 1 μm to 10 μm, preferably 2 μm to 7 μm. By making it 1 μm or more, it becomes easy to make the smoothness as a film having a smooth layer sufficiently, and by making it 10 μm or less, it becomes easy to adjust the balance of optical properties of the smooth film, and the smooth layer is made of a transparent polymer film. It becomes possible to easily suppress curling of the smooth film when it is provided only on one of the surfaces.

(Bleed-out prevention layer)
In the present invention, a bleed-out prevention layer can be provided as one of the intermediate layers. The bleed-out prevention layer is a smooth layer for the purpose of suppressing the phenomenon that, when a film having a smooth layer is heated, unreacted oligomers migrate from the film support to the surface and contaminate the contact surface. On the opposite surface of the substrate. The bleed-out prevention layer may basically have the same configuration as the smooth layer as long as it has this function.

  The unsaturated organic compound having a polymerizable unsaturated group that can be contained in the bleed-out prevention layer is a polyunsaturated organic compound having two or more polymerizable unsaturated groups in the molecule or 1 in the molecule. Examples thereof include monounsaturated organic compounds having a single polymerizable unsaturated group.

  Here, examples of the polyunsaturated organic compound include ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, glycerol di (meth) acrylate, glycerol tri (meth) acrylate, 1,4-butanediol di ( (Meth) acrylate, 1,6-hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, dicyclopentanyl di (meth) acrylate, pentaerythritol tri (meth) Acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, ditrimethylolpropane Tiger (meth) acrylate, diethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate.

  Moreover, as a unit price unsaturated organic compound, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isodecyl (meth) acrylate, Lauryl (meth) acrylate, stearyl (meth) acrylate, allyl (meth) acrylate, cyclohexyl (meth) acrylate, methylcyclohexyl (meth) acrylate, isobornyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (Meth) acrylate, glycerol (meth) acrylate, glycidyl (meth) acrylate, benzyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate, 2- (2-e Xoxyethoxy) ethyl (meth) acrylate, butoxyethyl (meth) acrylate, 2-methoxyethyl (meth) acrylate, methoxydiethylene glycol (meth) acrylate, methoxytriethylene glycol (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, 2- Examples include methoxypropyl (meth) acrylate, methoxydipropylene glycol (meth) acrylate, methoxytripropylene glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, polyethylene glycol (meth) acrylate, and polypropylene glycol (meth) acrylate. .

  As other additives, a matting agent may be contained. As the matting agent, inorganic particles having an average particle diameter of about 0.1 μm to 5 μm are preferable.

  As the inorganic particles, one or more of silica, alumina, talc, clay, calcium carbonate, magnesium carbonate, barium sulfate, aluminum hydroxide, titanium dioxide, zirconium oxide and the like can be used in combination.

  Here, the matting agent composed of inorganic particles is 2 parts by mass or more, preferably 4 parts by mass or more, more preferably 6 parts by mass or more and 20 parts by mass or less, preferably 18 parts per 100 parts by mass of the solid content of the hard coat agent. It is desirable that they are mixed in a proportion of not more than part by mass, more preferably not more than 16 parts by mass.

  The bleed-out prevention layer may contain a thermoplastic resin, a thermosetting resin, an ionizing radiation curable resin, a photopolymerization initiator, and the like as other components of the hard coat agent and the mat agent.

  Examples of such thermoplastic resins include cellulose derivatives such as acetylcellulose, nitrocellulose, acetylbutylcellulose, ethylcellulose, methylcellulose, vinyl acetate and copolymers thereof, vinyl chloride and copolymers thereof, vinylidene chloride and copolymers thereof. Vinyl resins such as polyvinyl acetal resins such as polyvinyl formal and polyvinyl butyral, acrylic resins and copolymers thereof, acrylic resins such as methacrylic resins and copolymers thereof, polystyrene resins, polyamide resins, linear polyester resins, polycarbonates Examples thereof include resins.

  Moreover, as a thermosetting resin, the thermosetting urethane resin which consists of an acrylic polyol and an isocyanate prepolymer, a phenol resin, a urea melamine resin, an epoxy resin, an unsaturated polyester resin, a silicone resin etc. are mentioned.

  Moreover, as an ionizing radiation curable resin, it hardens | cures by irradiating ionizing radiation (an ultraviolet ray or an electron beam) to the ionizing radiation hardening coating material which mixed 1 type (s) or 2 or more types, such as a photopolymerizable prepolymer or a photopolymerizable monomer. You can use what you want. Here, as the photopolymerizable prepolymer, an acrylic prepolymer having two or more acryloyl groups in one molecule and having a three-dimensional network structure by crosslinking and curing is particularly preferably used.

  As this acrylic prepolymer, urethane acrylate, polyester acrylate, epoxy acrylate, melamine acrylate and the like can be used. As the photopolymerizable monomer, the polyunsaturated organic compounds described above can be used.

  Examples of the photopolymerization initiator include acetophenone, benzophenone, Michler's ketone, benzoin, benzylmethyl ketal, benzoin benzoate, hydroxycyclohexyl phenyl ketone, 2-methyl-1- (4- (methylthio) phenyl) -2- (4-morpholinyl). ) -1-propane, α-acyloxime ester, thioxanthone and the like.

  The bleed-out prevention layer as described above is mixed with a hard coat agent, a matting agent, and other components as necessary, and is prepared as a coating solution by using a diluent solvent as necessary, and supports the coating solution. It can be produced by coating the body film surface with a conventionally known coating method and then curing it by irradiating with ionizing radiation.

  In addition, as a method of irradiating with ionizing radiation, ultraviolet rays having a wavelength region of 100 nm to 400 nm, preferably 200 nm to 400 nm emitted from an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a low pressure mercury lamp, a carbon arc, a metal halide lamp, etc. are irradiated or scanned. The irradiation can be performed by irradiating an electron beam having a wavelength region of 100 nm or less emitted from a type or curtain type electron beam accelerator.

  As the thickness of the bleed-out prevention layer, it is possible to improve the heat resistance of the film, facilitate the balance adjustment of the optical properties of the film, and prevent curling when the bleed-out prevention layer is provided only on one side of the gas barrier film. Therefore, the range of 1 μm to 10 μm is preferable, and the range of 2 μm to 7 μm is more preferable.

<< Use of gas barrier film >>
The use of the gas barrier film of the present invention will be described.

  The gas barrier film of the present invention is mainly used in packages such as electronic devices, or gas barrier films used for display materials such as organic EL elements, solar cells, and liquid crystal plastic substrates, and various devices using the gas barrier film. Resin base materials and various organic electronic device elements.

  The gas barrier film of the present invention can be used as various sealing materials and films.

Among the above, the gas barrier film of the present invention can be used for an organic electronic device.

  Hereinafter, as an example of an organic electronic device having the gas barrier film of the present invention, an organic photoelectric conversion element and a solar cell having the element will be described.

[Organic photoelectric conversion element]
The organic photoelectric conversion element according to the present invention will be described.

  The organic photoelectric conversion element according to the present invention has the gas barrier film of the present invention as a component, but when used for the organic photoelectric conversion element, the gas barrier film of the present invention is preferably transparent, specifically, It is preferable to use a transparent gas barrier film as a constituent member of the support of the organic photoelectric conversion element and to receive sunlight from the gas barrier film side.

  Here, “transparent” means that the light transmittance of visible light (400 nm to 700 nm) is 80% or more.

  That is, on this gas barrier film, for example, a transparent conductive thin film such as ITO can be provided as a transparent electrode to constitute a resin support for an organic photoelectric conversion element. Then, an ITO transparent conductive film provided on the support is used as an anode, a porous semiconductor layer is provided thereon, and a cathode made of a metal film is prepared to produce an organic photoelectric conversion element. The organic photoelectric conversion element can be sealed by stacking a stop material (although it may be the same), adhering the gas barrier film support and the periphery, and encapsulating the element. The influence on the element due to can be sealed.

  The resin support for organic photoelectric conversion elements is obtained by producing a transparent conductive film on the gas barrier layer (also simply referred to as a barrier layer) of the gas barrier film produced in this manner. The transparent conductive film can be produced by using a vacuum deposition method, a sputtering method, or the like, or by a coating method such as a sol-gel method using a metal alkoxide such as indium or tin.

  As a film thickness of a transparent conductive film, the range of 0.1 nm-1000 nm is preferable.

  Next, an organic photoelectric conversion element using these gas barrier films and a resin support for an organic photoelectric conversion element on which a transparent conductive film is produced will be described.

(Sealing film and its manufacturing method)
In the present invention, it is preferable to use a gas barrier film having the gas barrier layer (also simply referred to as a barrier layer) as a substrate.

  In the gas barrier film having the barrier layer, a transparent conductive film is further formed on the barrier layer, and the layer constituting the organic photoelectric conversion element and the layer serving as the cathode are laminated on the transparent conductive film. Furthermore, another gas barrier film is used as a sealing film to be sealed by overlapping.

  As another sealing material (sealing film) used, the gas barrier film of the present invention can be used. Also, for example, known gas barrier films used for packaging materials, such as plastic films deposited with silicon oxide or aluminum oxide, dense ceramic layers, and flexible impact relaxation polymer layers alternately A gas barrier film or the like laminated on the substrate can be used as the sealing film.

  In particular, a resin-laminated (polymer film) metal foil cannot be used as a gas barrier film on the light extraction side, but is a low-cost and further moisture-permeable sealing material and does not intend to extract light (transparent When the property is not required), it is preferable as a sealing film.

  In the present invention, a metal foil is a metal foil or film made by rolling or the like, unlike a metal thin film made by sputtering or vapor deposition, or a conductive film made from a fluid electrode material such as a conductive paste. Point to.

  There is no particular limitation on the type of metal as the metal foil. For example, copper (Cu) foil, aluminum (Al) foil, gold (Au) foil, brass foil, nickel (Ni) foil, titanium (Ti) foil, copper alloy Examples thereof include foil, stainless steel foil, tin (Sn) foil, and high nickel alloy foil. Among these various metal foils, a particularly preferred metal foil is an Al foil.

  The thickness of the metal foil is preferably 6 to 50 μm. If the thickness is less than 6 μm, depending on the material used for the metal foil, pinholes may be vacant during use, and required barrier properties (moisture permeability, oxygen permeability) may not be obtained. When the thickness exceeds 50 μm, the cost increases depending on the material used for the metal foil, and the merit of the film may be reduced because the organic photoelectric conversion element becomes thick.

  In a metal foil laminated with a resin film (polymer film), various materials described in the new development of functional packaging materials (Toray Research Center, Inc.) can be used as the resin film. Resin, polypropylene resin, polyethylene terephthalate resin, polyamide resin, ethylene-vinyl alcohol copolymer resin, ethylene-vinyl acetate copolymer resin, acrylonitrile-butadiene copolymer resin, cellophane resin, vinylon resin, chloride Examples thereof include vinylidene resins. Resins such as polypropylene resins and nylon resins may be stretched and further coated with a vinylidene chloride resin. In addition, a polyethylene resin having a low density or a high density can be used.

  As will be described later, as a method for sealing the two films, for example, a method of laminating a commonly used impulse sealer heat-fusible resin layer, fusing with an impulse sealer, and sealing is preferable. In addition, when sealing the gas barrier films, if the film thickness exceeds 300 μm, the film handling property deteriorates during sealing work and it becomes difficult to heat-seal with an impulse sealer or the like, so the film thickness is 300 μm or less. Is desirable.

[Preferred embodiment of sealing of organic photoelectric conversion element]
The preferable aspect of sealing used for the organic photoelectric conversion element which is one of the organic electronic devices concerning this invention is demonstrated.

  As an example of production of the organic photoelectric conversion device according to the present invention, a transparent conductive film is formed on the gas barrier film of the present invention having a barrier layer, and each layer of the organic photoelectric conversion device is formed on the resin support for the organic photoelectric conversion device. After the formation, the organic photoelectric conversion element can be sealed using the sealing film so as to cover the cathode surface with the sealing film in an environment purged with an inert gas.

As the inert gas, a rare gas such as He and Ar is preferably used in addition to N ₂ , but a rare gas in which He and Ar are mixed is also preferable, and the ratio of the inert gas in the gas is 90% by volume to 99%. It is preferably 9% by volume. Preservability is improved by sealing in an environment purged with an inert gas.

  Moreover, in sealing the organic photoelectric conversion element using the metal foil laminated with the resin film (polymer film), a ceramic layer is produced on the metal foil instead of the laminated resin film surface, The ceramic layer surface is preferably bonded to the cathode of the organic photoelectric conversion element. When the polymer film surface of the sealing film is bonded to the cathode of the organic photoelectric conversion element, conduction may occur partially.

  As a sealing method of bonding the sealing film to the cathode of the organic photoelectric conversion element, a resin film that can be fused with a commonly used impulse sealer, for example, ethylene vinyl acetate copolymer (EVA), polypropylene (PP) film, polyethylene There is a method in which a heat-fusible film such as a (PE) film is laminated and fused with an impulse sealer and sealed.

  As an adhesion method, the dry laminating method is excellent in terms of workability. This method generally uses a curable adhesive layer of about 1.0 μm to 2.5 μm. However, if the amount of adhesive applied is too large, tunneling, leaching, crimping, etc. may occur, so the amount of adhesive is preferably adjusted to 3 μm to 5 μm in dry film thickness. It is preferable to do.

  Hot melt lamination is a method in which a hot melt adhesive is melted and an adhesive layer is coated on a support, and the thickness of the adhesive layer is generally a method that can be set in a wide range of 1 μm to 50 μm. Commonly used base resins for hot melt adhesives include EVA, EEA, polyethylene, butyl rubber, etc., rosin, xylene resin, terpene resin, styrene resin, etc. as tackifiers, wax etc. It is added as an agent.

  The extrusion laminating method is a method in which a resin melted at a high temperature is coated on a support with a die, and the thickness of the resin layer can generally be set in a wide range of 10 μm to 50 μm. As a resin used for the extrusion laminate, LDPE, EVA, PP, etc. are generally used.

  Next, each layer (constituent layer) of the organic photoelectric conversion element material constituting the organic photoelectric conversion element will be described.

[Configuration of organic photoelectric conversion element and solar cell]
Although the preferable aspect of an organic photoelectric conversion element and a solar cell is demonstrated as an example of the organic electronic device which concerns on this invention, this invention is not limited to these.

Hereinafter will be described in detail preferred embodiments of the organic photoelectric conversion element according to the present invention, a solar cell according to the present invention are those having an organic photoelectric conversion element according to the present invention as a constituent, preferably a solar cell The configuration can be similarly described.

  The organic photoelectric conversion element is not particularly limited, and has at least one anode and cathode, and a power generation layer (also referred to as a p-type semiconductor and n-type semiconductor mixed layer, a bulk heterojunction layer, or an i layer) sandwiched therebetween. Any element that has more than one layer and generates current when irradiated with light may be used.

  The preferable specific example of the layer structure of an organic photoelectric conversion element (The preferable layer structure of a solar cell is also the same) is shown below.

(I) Anode / power generation layer / cathode (ii) Anode / hole transport layer / power generation layer / cathode (iii) Anode / hole transport layer / power generation layer / electron transport layer / cathode (iv) Anode / hole transport layer / P-type semiconductor layer / power generation layer / n-type semiconductor layer / electron transport layer / cathode (v) anode / hole transport layer / first power generation layer / electron transport layer / intermediate electrode / hole transport layer / second power generation layer / Electron transport layer / cathode.

  Here, the power generation layer needs to contain a p-type semiconductor material capable of transporting holes and an n-type semiconductor material capable of transporting electrons, and even if these layers form a heterojunction with substantially two layers. Alternatively, a bulk heterojunction in a mixed state in one layer may be manufactured, but a bulk heterojunction configuration is preferable because of higher photoelectric conversion efficiency. A p-type semiconductor material and an n-type semiconductor material used for the power generation layer will be described later.

  Like the organic EL element, the efficiency of taking out holes and electrons to the anode / cathode can be increased by sandwiching the power generation layer between the hole transport layer and the electron transport layer. Therefore, the structure having them ((ii), ( iii)) is preferred. Further, in order to improve the rectification of holes and electrons (selection of carrier extraction), the power generation layer itself is sandwiched between layers of a p-type semiconductor material and a single n-type semiconductor material as shown in (iv). A configuration (also referred to as a pin configuration) may be used. Moreover, in order to improve the utilization efficiency of sunlight, the tandem configuration (configuration (v)) in which sunlight of different wavelengths is absorbed by each power generation layer may be employed.

  For the purpose of improving the sunlight utilization rate (photoelectric conversion efficiency), instead of the sandwich structure in the organic photoelectric conversion element 10 shown in FIG. 1 described below, a hole transport layer 14 on each of the pair of comb-like electrodes, A back-contact type organic photoelectric conversion element in which the electron transport layer 16 is produced and the photoelectric conversion unit 15 is disposed thereon can also be configured.

  Furthermore, the preferable aspect of the organic photoelectric conversion element which concerns on detailed this invention is demonstrated below.

  FIG. 1 is a cross-sectional view showing an example of a solar cell composed of a bulk heterojunction organic photoelectric conversion element.

  In FIG. 1, a bulk heterojunction organic photoelectric conversion element 10 has an anode 12, a hole transport layer 17, a power generation layer 14 of a bulk heterojunction layer, an electron transport layer 18, and a cathode 13 sequentially stacked on one surface of a substrate 11. Has been.

  The substrate 11 is a member that holds the anode 12, the power generation layer 14, and the cathode 13 that are sequentially stacked. In the present embodiment, since light that is photoelectrically converted enters from the substrate 11 side, the substrate 11 can transmit the light that is photoelectrically converted, that is, with respect to the wavelength of the light to be photoelectrically converted. It is a transparent member. As the substrate 11, for example, a glass substrate or a resin substrate is used. The substrate 11 is not essential. For example, the bulk heterojunction organic photoelectric conversion element 10 may be configured by forming the anode 12 and the cathode 13 on both surfaces of the power generation layer 14.

  The power generation layer 14 is a layer that converts light energy into electrical energy, and includes a bulk heterojunction layer in which a p-type semiconductor material and an n-type semiconductor material are uniformly mixed. The p-type semiconductor material relatively functions as an electron donor (donor), and the n-type semiconductor material relatively functions as an electron acceptor (acceptor).

  In FIG. 1, light incident from the anode 12 through the substrate 11 is absorbed by the electron acceptor or electron donor in the bulk heterojunction layer of the power generation layer 14, and electrons move from the electron donor to the electron acceptor. A pair of holes and electrons (charge separation state) is produced. The generated electric charge is caused by an internal electric field, for example, when the work function of the anode 12 and the cathode 13 is different, the electrons pass between the electron acceptors and the holes are electron donors due to the potential difference between the anode 12 and the cathode 13. The photocurrent is detected by passing through different electrodes to different electrodes.

  For example, when the work function of the anode 12 is larger than that of the cathode 13, electrons are transported to the anode 12 and holes are transported to the cathode 13. If the magnitude of the work function is reversed, electrons and holes are transported in the opposite direction. In addition, the transport direction of electrons and holes can be controlled by applying a potential between the anode 12 and the cathode 13.

  Although not shown in FIG. 1, other layers such as a hole blocking layer, an electron blocking layer, an electron injection layer, a hole injection layer, or a smoothing layer may be included.

  As a more preferable configuration, the power generation layer 14 has a so-called p-i-n three-layer configuration (FIG. 2). A normal bulk heterojunction layer is a single i layer in which a p-type semiconductor material and an n-type semiconductor layer are mixed. By sandwiching between a p-layer composed of a single p-type semiconductor material and an n-layer composed of a single n-type semiconductor material, Further, the rectification property of holes and electrons is further increased, loss due to recombination of charge-separated holes and electrons is reduced, and higher photoelectric conversion efficiency can be obtained.

  Furthermore, it is good also as a tandem-type structure which laminated | stacked such a photoelectric conversion element for the purpose of the improvement of sunlight utilization factor (photoelectric conversion efficiency).

  FIG. 3 is a cross-sectional view showing a solar cell composed of an organic photoelectric conversion element including a tandem bulk heterojunction layer. In the case of the tandem configuration, the transparent electrode 12 and the first power generation layer 14 ′ are sequentially stacked on the substrate 11, the charge recombination layer 15 is stacked, the second power generation layer 16, and then the counter electrode 13 are stacked. By stacking, a tandem structure can be obtained. The second power generation layer 16 may be a layer that absorbs the same spectrum as the absorption spectrum of the first power generation layer 14 ′ or may be a layer that absorbs a different spectrum, but is preferably a layer that absorbs a different spectrum. Further, both the first power generation layer 14 ′ and the second power generation layer 16 may have the above-described three-layer structure of pin.

  Below, the material which comprises these layers is described.

[Organic photoelectric conversion element material]
The material used for formation of the electric power generation layer (it is also called a photoelectric converting layer) of the organic photoelectric conversion element concerning this invention is demonstrated.

(P-type semiconductor material)
Examples of the p-type semiconductor material preferably used as the power generation layer (bulk heterojunction layer) of the organic photoelectric conversion device according to the present invention include various condensed polycyclic aromatic low molecular compounds and conjugated polymers / oligomers.

  Examples of the condensed polycyclic aromatic low-molecular compound include anthracene, tetracene, pentacene, hexacene, heptacene, chrysene, picene, fluorene, pyrene, peropyrene, perylene, terylene, quaterylene, coronene, ovalene, circumanthracene, bisanthene, zesulene, Compounds such as heptazeslen, pyranthrene, violanthene, isoviolanthene, cacobiphenyl, anthradithiophene, porphyrin, copper phthalocyanine, tetrathiafulvalene (TTF) -tetracyanoquinodimethane (TCNQ) complex, bisethylenetetrathiafulvalene (BEDTTTTF ) -Perchloric acid complexes, and derivatives and precursors thereof.

  Examples of the derivative having the above condensed polycycle include International Publication No. 03/16599, International Publication No. 03/28125, US Pat. No. 6,690,029, Japanese Patent Application Laid-Open No. 2004-107216. A pentacene derivative having a substituent as described in U.S. Pat. No. 2003/136964, J. Pat. Amer. Chem. Soc. , Vol127. No. 14.4986, J. MoI. Amer. Chem. Soc. , Vol. 123, p9482; Amer. Chem. Soc. , Vol. 130 (2008), no. 9, acene-based compounds substituted with a trialkylsilylethynyl group described in 2706 and the like.

  As the conjugated polymer, for example, a polythiophene such as poly-3-hexylthiophene (P3HT) and an oligomer thereof, or a technical group described in Technical Digest of the International PVSEC-17, Fukuoka, Japan, 2007, P1225. Polythiophene, Nature Material, (2006) vol. 5, p328, a polythiophene-thienothiophene copolymer described in WO2008000664, a polythiophene-diketopyrrolopyrrole copolymer described in WO2008000664, a polythiophene-thiazolothiazole copolymer described in Adv Mater, 2007p4160, Nature Mat. vol. 6 (2007), p497 described in PCPDTBT, etc., polypyrrole and its oligomer, polyaniline, polyphenylene and its oligomer, polyphenylene vinylene and its oligomer, polythienylene vinylene and its oligomer, polyacetylene, polydiacetylene, Examples thereof include polymer materials such as σ-conjugated polymers such as polysilane and polygermane.

  In addition, oligomeric materials instead of polymer materials include thiophene hexamer α-sexual thiophene α, ω-dihexyl-α-sexual thiophene, α, ω-dihexyl-α-kinkethiophene, α, ω-bis (3 Oligomers such as -butoxypropyl) -α-sexithiophene can be preferably used.

  Among these compounds, a compound that is highly soluble in an organic solvent to the extent that a solution process is possible and that can produce a crystalline thin film and achieve high mobility after drying is preferable.

  In addition, when the electron transport layer is formed on the power generation layer by coating, there is a problem that the electron transport layer solution dissolves the power generation layer. Therefore, a material that can be insolubilized after coating by a solution process may be used. .

  Examples of such a material include materials that can be insolubilized by polymerizing and crosslinking the coating film after coating, such as polythiophene having a polymerizable group described in Technical Digest of the International PVSEC-17, Fukuoka, Japan, 2007, P1225. Or by applying energy such as heat, as described in US 2003/136964 and JP-A 2008-16834, etc., the soluble substituent reacts to insolubilize (pigmentation). Material) and the like.

(N-type semiconductor material)
The n-type semiconductor material used for the bulk heterojunction layer according to the present invention is not particularly limited. For example, a perfluoro compound (perfluoropentacene or the like) in which a hydrogen atom of a p-type semiconductor such as fullerene or octaazaporphyrin is substituted with a fluorine atom. Perfluorophthalocyanine, etc.), naphthalenetetracarboxylic anhydride, naphthalenetetracarboxylic acid diimide, perylenetetracarboxylic acid anhydride, perylenetetracarboxylic acid diimide and other aromatic carboxylic acid anhydrides, and polymers containing such imidized compounds as a skeleton A compound etc. can be mentioned.

  However, fullerene derivatives that can perform charge separation efficiently with various p-type semiconductor materials at high speed (˜50 fs) are preferable. Fullerene derivatives include fullerene C60, fullerene C70, fullerene C76, fullerene C78, fullerene C84, fullerene C240, fullerene C540, mixed fullerene, fullerene nanotubes, multi-walled nanotubes, single-walled nanotubes, nanohorns (conical), etc. Partially by hydrogen atom, halogen atom, substituted or unsubstituted alkyl group, alkenyl group, alkynyl group, aryl group, heteroaryl group, cycloalkyl group, silyl group, ether group, thioether group, amino group, silyl group, etc. Examples thereof include substituted fullerene derivatives.

  Among them, [6,6] -phenyl C61-butyric acid methyl ester (abbreviation PCBM), [6,6] -phenyl C61-butyric acid-nbutyl ester (PCBnB), [6,6] -phenyl C61- Butyric acid-isobutyl ester (PCBiB), [6,6] -phenyl C61-butyric acid-n-hexyl ester (PCBH), Adv. Mater. , Vol. 20 (2008), p2116, etc., aminated fullerenes such as JP-A 2006-199674, metallocene fullerenes such as JP-A 2008-130889, US Pat. No. 7,329,709, etc. It is preferable to use a fullerene derivative having a substituent and having improved solubility, such as fullerene having a cyclic ether group such as a calligraphy.

(Hole transport layer / electron block layer)
In the organic photoelectric conversion element 10 of the present invention, the hole transport layer 17 can be taken out between the bulk heterojunction layer and the anode, and charges generated in the bulk heterojunction layer can be taken out more efficiently. It is preferable to have.

  As a material constituting these layers, for example, as the hole transport layer 17, PEDOT such as Product name BaytronP manufactured by Stark Vitec, polyaniline and its doped material, described in WO 06/19270, etc. Cyanide compounds can be used.

  Note that the hole transport layer having a LUMO level shallower than the LUMO level of the n-type semiconductor material used for the bulk heterojunction layer has a rectifying effect that prevents electrons generated in the bulk heterojunction layer from flowing to the anode side. The electronic block function is provided.

  Such a hole transport layer is also called an electron block layer, and it is preferable to use a hole transport layer having such a function. As such a material, a triarylamine compound described in JP-A-5-271166 or a metal oxide such as molybdenum oxide, nickel oxide, or tungsten oxide can be used.

  A layer made of a single p-type semiconductor material used for the bulk heterojunction layer can also be used. As a means for producing these layers, either a vacuum vapor deposition method or a solution coating method may be used, but a solution coating method is preferable. It is preferable to produce a coating film in the lower layer before producing the bulk heterojunction layer because it has the effect of leveling the application surface and reduces the influence of leakage and the like.

(Electron transport layer / hole blocking layer)
Since the organic photoelectric conversion element 10 is capable of extracting charges generated in the bulk heterojunction layer more efficiently by forming the electron transport layer 18 between the bulk heterojunction layer and the cathode, these layers It is preferable to have.

  As the electron transport layer 18, octaazaporphyrin, a p-type semiconductor perfluoro product (perfluoropentacene, perfluorophthalocyanine, or the like) can be used. Similarly, a p-type semiconductor material used for a bulk heterojunction layer is used. The electron transport layer having a HOMO level deeper than the HOMO level is given a hole blocking function having a rectifying effect so that holes generated in the bulk heterojunction layer do not flow to the cathode side.

  Such an electron transport layer is also called a hole blocking layer, and it is preferable to use an electron transport layer having such a function.

  Examples of such materials include phenanthrene compounds such as bathocuproine, n-type semiconductor materials such as naphthalenetetracarboxylic acid anhydride, naphthalenetetracarboxylic acid diimide, perylenetetracarboxylic acid anhydride, perylenetetracarboxylic acid diimide, and titanium oxide. N-type inorganic oxides such as zinc oxide and gallium oxide, and alkali metal compounds such as lithium fluoride, sodium fluoride, and cesium fluoride can be used.

  A layer made of a single n-type semiconductor material used for the bulk heterojunction layer can also be used. As a means for producing these layers, either a vacuum vapor deposition method or a solution coating method may be used, but a solution coating method is preferable.

(Other layers)
For the purpose of improving energy conversion efficiency and improving the lifetime of the element, a structure having various intermediate layers in the element may be employed. Examples of the intermediate layer include a hole block layer, an electron block layer, a hole injection layer, an electron injection layer, an exciton block layer, a UV absorption layer, a light reflection layer, and a wavelength conversion layer.

(Transparent electrode (first electrode))
In the transparent electrode according to the present invention, the cathode and the anode are not particularly limited and can be selected depending on the element configuration, but preferably the transparent electrode is used as the anode. For example, when used as an anode, it is preferably an electrode that transmits light of 380 nm to 800 nm.

As the material, for example, transparent conductive metal oxides such as indium tin oxide (ITO), SnO ₂ and ZnO, metal thin films such as gold, silver and platinum, metal nanowires, and carbon nanotubes can be used.

  Also selected from the group consisting of derivatives of polypyrrole, polyaniline, polythiophene, polythienylene vinylene, polyazulene, polyisothianaphthene, polycarbazole, polyacetylene, polyphenylene, polyphenylene vinylene, polyacene, polyphenylacetylene, polydiacetylene and polynaphthalene. Conductive polymers can also be used. A plurality of these conductive compounds can be combined to form a transparent electrode.

(Counter electrode (second electrode))
The counter electrode may be a single layer of a conductive material, but in addition to a conductive material, a resin that holds these may be used in combination. As the conductive material of the counter electrode, a material having a small work function (4 eV or less) metal, alloy, electrically conductive compound and a mixture thereof is used.

Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al ₂ O ₃ ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.

Among these, from the viewpoint of electron extraction performance and durability against oxidation, etc., a mixture of these metals and a second metal which is a stable metal having a larger work function value than this, for example, a magnesium / silver mixture, magnesium / Aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al ₂ O ₃ ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.

  The counter electrode can be produced by producing a thin film of these electrode materials by a method such as vapor deposition or sputtering. The film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 nm to 200 nm.

  If a metal material is used as the conductive material of the counter electrode, the light coming to the counter electrode side is reflected and reflected to the first electrode side, and this light can be reused and absorbed again by the photoelectric conversion layer, and more photoelectric conversion is performed. Efficiency is improved and preferable.

  Further, the counter electrode 13 may be a metal (for example, gold, silver, copper, platinum, rhodium, ruthenium, aluminum, magnesium, indium, etc.), a nanoparticle made of carbon, a nanowire, or a nanostructure. A dispersion is preferable because a transparent and highly conductive counter electrode can be produced by a coating method.

  Moreover, when making the counter electrode side light-transmitting, for example, after forming a conductive material suitable for the counter electrode such as aluminum and aluminum alloy, silver and silver compound in a thin film thickness of about 1 to 20 nm, By providing a film of the conductive light transmissive material mentioned in the description of the transparent electrode, a light transmissive counter electrode can be obtained.

(Intermediate electrode)
In addition, the material of the intermediate electrode required in the case of the tandem configuration as in (v) (or FIG. 3) is preferably a layer using a compound having both transparency and conductivity. (Such as ITO, AZO, FTO, transparent metal oxides such as titanium oxide, very thin metal layers such as Ag, Al, Au, or layers containing nanoparticles / nanowires, PEDOT: PSS, polyaniline, etc. Or the like can be used.

  In addition, in the hole transport layer and the electron transport layer described above, there is also a combination that works as an intermediate electrode (charge recombination layer) by appropriately stacking them. Is preferable.

(Metal nanowires)
In the present invention, organic fibers and inorganic fibers coated with metal, conductive metal oxide fibers, metal nanowires, carbon fibers, carbon nanotubes, and the like can be used as the conductive fibers, but metal nanowires are preferred.

  In general, a metal nanowire refers to a linear structure having a metal element as a main component. In particular, the metal nanowire in the present invention means a linear structure having a diameter of nm size.

  In the present invention, the metal nanowires preferably have an average length of 3 μm or more in order to produce a long conductive path with one metal nanowire and to exhibit appropriate light scattering properties. 3 μm to 500 μm are preferable, and 3 μm to 300 μm are particularly preferable. In addition, the relative standard deviation of the length is preferably 40% or less.

  Moreover, it is preferable that an average diameter is small from a transparency viewpoint, On the other hand, the larger one is preferable from an electroconductive viewpoint. In the present invention, the average diameter of the metal nanowires is preferably 10 nm to 300 nm, and more preferably 30 nm to 200 nm. In addition, the relative standard deviation of the diameter is preferably 20% or less.

  In the present invention, the metal composition of the metal nanowire is not particularly limited, and can be composed of one or more metals of a noble metal element and a base metal element, but noble metals (for example, gold, platinum, silver, palladium, rhodium, (Iridium, ruthenium, osmium, etc.) and at least one metal belonging to the group consisting of iron, cobalt, copper, and tin is preferable, and at least silver is more preferable from the viewpoint of conductivity.

  In order to achieve both conductivity and stability (sulfurization and oxidation resistance of metal nanowires and migration resistance), it is also preferable to include silver and at least one metal belonging to a noble metal other than silver. In the present invention, when the metal nanowire includes two or more kinds of metal elements, for example, the metal composition may be different between the inside and the surface of the metal nanowire, or the entire metal nanowire has the same metal composition. May be.

  In the present invention, the means for producing the metal nanowire is not particularly limited, and for example, known means such as a liquid phase method and a gas phase method can be used. Moreover, there is no restriction | limiting in particular in a specific manufacturing method, A well-known manufacturing method can be used.

  For example, as a method for producing Ag nanowires, Adv. Mater. , 2002, 14, 833-837; Chem. Mater. , 2002, 14, 4736-4745, etc. As a method for producing Co nanowires, a method for producing Au nanowires is disclosed in JP 2006-233252A, and a method for producing Cu nanowires is disclosed in JP 2002-266007 A, etc. Reference can be made to Japanese Unexamined Patent Publication No. 2004-149871. In particular, Adv. Mater. And Chem. Mater. The method for producing Ag nanowires reported in (1) can be easily produced in an aqueous system, and since the conductivity of silver is the highest among metals, it is preferable as the method for producing metal nanowires according to the present invention. Can be applied.

  In the present invention, metal nanowires come into contact with each other to create a three-dimensional conductive network, exhibit high conductivity, and allow light to pass through the window of the conductive network where there is no metal nanowire. In addition, the power generation from the organic power generation layer portion can be efficiently performed by the scattering effect of the metal nanowires. If a metal nanowire is installed in the 1st electrode at the side close | similar to an organic electric power generation layer part, since this scattering effect can be utilized more effectively, it is more preferable embodiment.

(Optical function layer)
The organic photoelectric conversion element according to the present invention may have various optical function layers for the purpose of more efficient light reception of sunlight. As the optical functional layer, for example, a light condensing layer such as an antireflection layer or a microlens array, or a light diffusion layer that can scatter light reflected by the cathode and enter the power generation layer again may be provided. .

  Various known antireflection layers can be provided as the antireflection layer. For example, when the transparent resin film is a biaxially stretched polyethylene terephthalate film, the refractive index of the easy adhesion layer adjacent to the film is 1.57. It is more preferable to set it to ˜1.63 because the interface reflection between the film substrate and the easy adhesion layer can be reduced and the transmittance can be improved. The method for adjusting the refractive index can be carried out by appropriately adjusting the ratio of the oxide sol having a relatively high refractive index such as tin oxide sol or cerium oxide sol and the binder resin. The easy adhesion layer may be a single layer, but may be composed of two or more layers in order to improve adhesion.

  As the condensing layer, for example, it is processed to provide a structure on the microlens array on the sunlight receiving side of the support substrate, or the amount of light received from a specific direction is increased by combining with a so-called condensing sheet. Conversely, the incident angle dependency of sunlight can be reduced.

  As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are two-dimensionally arranged on the light extraction side of the substrate. One side is preferably 10 μm to 100 μm. If it is smaller than this, the effect of diffraction is generated and colored.

  Examples of the light diffusion layer include various antiglare layers, layers in which nanoparticles or nanowires such as metals or various inorganic oxides are dispersed in a colorless and transparent polymer, and the like.

(Film formation method / surface treatment method)
Examples of a method for producing a bulk heterojunction layer in which an electron acceptor and an electron donor are mixed, and a transport layer / electrode include a vapor deposition method and a coating method (including a cast method and a spin coat method). Among these, examples of the method for producing the bulk heterojunction layer include a vapor deposition method and a coating method (including a casting method and a spin coating method).

  Among these, the coating method is preferable in order to increase the area of the interface where charges and electrons are separated from each other as described above and to produce a device having high photoelectric conversion efficiency. Also, the coating method is excellent in production speed.

  Although there is no restriction | limiting in the coating method used in this case, For example, a spin coat method, the cast method from a solution, a dip coat method, a blade coat method, a wire bar coat method, a gravure coat method, a spray coat method etc. are mentioned. Furthermore, patterning can also be performed by a printing method such as an inkjet method, a screen printing method, a relief printing method, an intaglio printing method, an offset printing method, a flexographic printing method, or the like.

  After application, it is preferable to perform heating in order to cause removal of residual solvent, moisture, and gas and increase mobility and absorption longwave by crystallization of the semiconductor material. When annealing is performed at a predetermined temperature during the manufacturing process, a part of the particles is microscopically aggregated or crystallized, and the bulk heterojunction layer can have an appropriate phase separation structure. As a result, the carrier mobility of the bulk heterojunction layer is improved and high efficiency can be obtained.

  The power generation layer (bulk heterojunction layer) 14 may be composed of a single layer in which an electron acceptor and an electron donor are uniformly mixed, but a plurality of layers in which the mixing ratio of the electron acceptor and the electron donor is changed. You may comprise. In this case, it can be manufactured by using a material that can be insolubilized after coating as described above.

(Patterning)
In the present invention, the method and process for patterning the electrode, the power generation layer, the hole transport layer, the electron transport layer, and the like are not particularly limited, and known methods can be appropriately applied.

  If it is a soluble material such as a bulk heterojunction layer and a transport layer, only unnecessary portions may be wiped after the entire surface of die coating, dip coating, etc., or direct patterning at the time of coating using a method such as an ink jet method or screen printing. May be.

  In the case of an insoluble material such as an electrode material, the electrode can be patterned by a known method such as mask vapor deposition during vacuum deposition, etching or lift-off. Alternatively, the pattern may be produced by transferring a pattern produced on another substrate.

  EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto. In addition, although the display of "part" or "%" is used in an Example, unless otherwise indicated, "part by mass" or "mass%" is represented.

Example 1
<< Production of Gas Barrier Film 1 >>
As described below, a gas barrier film 1 of the present invention was produced through a process of producing a base material and then forming a barrier layer on the base material.

[Preparation of substrate]
Using a 200 μm thick transparent polyimide film (manufactured by Mitsubishi Gas Chemical Co., Ltd., called Neoprim L, PI L-3430, Tg: 303 ° C.) that is a heat-resistant resin support and is easily bonded on both sides, As shown below, while transporting the film at a speed of 30 m / min, after forming a smooth layer on both sides of the support, a roll-shaped film having an adhesive protective film bonded to the surface was used as a base material. .

[Formation of smooth layers 1 and 2]
(Preparation of smooth layer coating solution)
8.0 g of trimethylolpropane triglycidyl ether (Epolite 100MF manufactured by Kyoeisha Chemical Co., Ltd.), 5.0 g of ethylene glycol diglycidyl ether (Epolite 40E manufactured by Kyoeisha Chemical Co., Ltd.), silsesquioxane having an oxetanyl group: OX-SQ- 12.0 g of H (manufactured by Toagosei Co., Ltd.), 32.5 g of 3-glycidoxypropyltrimethoxysilane, 2.2 g of Al (III) acetylacetonate, methanol silica sol (manufactured by Nissan Chemical Co., Ltd., solid content concentration 30) (Mass%) 134.0 g, BYK333 (manufactured by BYK Chemie) 0.1 g, butyl cellosolve 125.0 g and 0.1 mol / L hydrochloric acid water 15.0 g were mixed and sufficiently stirred. This was further left standing and deaerated at room temperature to obtain a smooth layer coating solution.

(Formation of smooth layer 1)
After performing a corona discharge treatment by a conventional method on one side of the substrate, the prepared smooth layer coating solution was applied under the condition that the film thickness after drying was 4.0 μm, and then dried at 80 ° C. for 3 minutes. . Further, a heat treatment was performed at 120 ° C. for 10 minutes to form a smooth layer.

(Formation of smooth layer 2)
After the smooth layer 1 is formed on one surface of the substrate by the above method, the surface of the substrate opposite to the surface on which the smooth layer 1 is formed is smoothed in the same manner as the smooth layer 1 using the smooth layer coating liquid. Layer 2 was formed.

  The surface roughness of the obtained smooth layer 1 and smooth layer 2 was about 20 nm in Rz defined by JIS B 0601.

  The surface roughness was measured using an AFM (Atomic Force Microscope) SPI3800N DFM manufactured by SII. The measurement range at one time was 80 μm × 80 μm, and the measurement location was changed three times, and the average of the Rt values obtained in each measurement was taken as the measurement value.

[Preparation of barrier layer]
Next, a barrier layer was formed on the smooth layer 1 of the substrate by the following steps (a) and (b).

Step (a): Formation of perhydropolysilazane layer As a solution containing perhydropolysilazane (PHPS), a 20% by mass dibutyl ether solution (Aquamica NN120-20 (PHPS) manufactured by AZ Electronic Materials Co., Ltd.), an amine catalyst (N , N, N ′, N′-tetramethyl-1,6-diaminohexane) containing 5% by mass of NAX120-20), the content of amine catalyst relative to the perhydropolysilazane (PHPS) concentration Is adjusted to 1.0 mass%, and is applied by spin coating using a solution diluted to 10 mass% with a dibutyl ether solvent, and the resulting coating film is dried at 80 ° C. for 5 minutes. A perhydropolysilazane-containing layer having a thickness of 150 nm after drying was prepared.

Step (b): Preparation of barrier layer by modification treatment (oxidation) of perhydropolysilazane layer The film base material having the perhydropolysilazane layer obtained in the above step (a) is placed in an oven and heated at 200 ° C. After the above, the vacuum ultraviolet ray (VUV) irradiation described below was performed to form a barrier layer.

  In addition, the dew point temperature of the atmosphere in a process (b) was -40 degreeC.

  This process (a) and the process (b) were repeated twice, and the gas barrier film 1 of this invention which laminated | stacked the barrier layer was produced.

<Vacuum ultraviolet (VUV) irradiation treatment conditions>
The irradiation conditions of vacuum ultraviolet rays (VUV) were set and irradiated using the following apparatus so that the distance between the lamp and the sample (also referred to as Gap) was 1 mm. The irradiation time was changed by adjusting the movable speed of the movable stage.

  The oxygen concentration during vacuum ultraviolet (VUV) irradiation is adjusted by measuring the flow rate of nitrogen gas and oxygen gas introduced into the irradiation chamber with a flow meter, and the nitrogen gas / oxygen gas flow rate of the gas introduced into the chamber. Adjusted by ratio.

Vacuum ultraviolet irradiation device: Stage movable xenon excimer irradiation device (MD excimer, MECL-M-1-200)
Illuminance: 140 mW / cm ²
Stage temperature: 100 ° C
Processing environment: Under dry nitrogen gas atmosphere Oxygen concentration in processing environment: 0.1%
Stage moving speed: 10 times transported at 10 mm / sec << Preparation of gas barrier film 2 >>
A gas barrier film 2 of the present invention was produced in the same manner as in the production of the gas barrier film 1 except that the support was changed to a polyacrylamide film (PA Mikutron, Tg: 304 ° C.).

<< Production of Gas Barrier Film 3 >>
In the production of the gas barrier film 1, the gas barrier film 3 of the present invention was produced in the same manner except that the support was changed to HF-6301 (Tg: 280 ° C.) manufactured by JSR Corporation.

<< Production of Gas Barrier Film 4 >>
In producing the gas barrier film 1, the gas barrier film 4 of the present invention was produced in the same manner except that the support was changed to AF-100 (Tg: 250 <) manufactured by Showa Denko KK.

<< Production of Gas Barrier Film 5 >>
In the production of the gas barrier film 1, the gas barrier film 5 of the present invention was produced in the same manner except that the support was changed to a transparent polyimide film (Toyobo Co., Ltd., type HM, Tg: 225 ° C.).

<< Production of Gas Barrier Film 6 >>
In the production of the gas barrier film 1, the gas barrier film 6 of the present invention was prepared in the same manner except that the support was changed to a polyethersulfone film (Sumitomo Bakelite Co., Ltd., FST-5353, Tg: 223 ° C.). Produced.

<< Production of Gas Barrier Film 7 >>
In the production of the gas barrier film 1, the gas barrier film 7 of the present invention was produced in the same manner except that the support was changed to a polycarbonate film (SS-120, Tg: 215 ° C., manufactured by Teijin Limited).

<< Production of Gas Barrier Film 8 >>
In the production of the gas barrier film 1, a polycarbonate film (HT-100, Tg: 115, manufactured by Teijin Limited) was used as a support, and the heating temperature to the polysilazane coating film was changed to 150 ° C. in the same manner. A gas barrier film 8 of the present invention was produced.

<< Production of Gas Barrier Film 9 >>
In the production of the gas barrier film 1, the polysilazane coating film was not heated, and the gas barrier film 9 of the present invention was produced in the same manner except that the stage temperature during the excimer modification was changed to 200 ° C.

<< Production of Gas Barrier Film 10 >>
In the production of the gas barrier film 1, heating to the polysilazane coating film is not performed, and the gas barrier film of the present invention is similarly manufactured except that the heat treatment to the gas barrier layer after the excimer modification is performed at 200 ° C. in an oven. 10 was produced.

<< Production of Gas Barrier Film 11 >>
After depositing 150 nm of an indium tin oxide (ITO) transparent conductive film on the gas barrier film 1, the gas barrier film 11 with the transparent conductive film of the present invention was produced by heating and baking at 200 ° C.

<< Production of Gas Barrier Film 12 >>
In the production of the gas barrier film 11, the gas barrier film 12 with a transparent conductive film of the present invention was produced in the same manner except that the heating and baking temperature was changed to 250 ° C.

<< Production of Gas Barrier Film 13 >>
The production of the gas barrier film 12 is the same except that a laminated barrier layer is formed on both surfaces (on the intermediate layer 1 and the intermediate layer 2) with a support interposed therebetween, and then a transparent conductive film is formed on one barrier surface. Thus, a gas barrier film 13 with a transparent conductive film of the present invention was produced.

<< Production of Gas Barrier Film 14 >>
In the production of the gas barrier film 13, the transparent liquid of the present invention was similarly used except that the coating liquid used for forming the polysilazane layer was a liquid obtained by diluting NN120-20 (non-catalytic type) to 10% by mass. A gas barrier film 14 with a conductive film was produced.

<< Production of Gas Barrier Film 15 >>
In the production of the gas barrier film 13, the present invention is the same except that a liquid obtained by diluting NAX120-20 (containing 5% amine catalyst) to 10% by mass is used as a coating liquid used when forming the polysilazane layer. A gas barrier film 15 with a transparent conductive film of the invention was produced.

<< Production of Gas Barrier Film 16 >>
In the production of the gas barrier film 13, the gas barrier film 16 with a transparent conductive film of the present invention was similarly used except that the dew point of the treatment environment during the modification treatment by vacuum ultraviolet (VUV) irradiation was adjusted to 5 ° C. Was made.

<< Production of Gas Barrier Film 17 >>
In the production of the gas barrier film 13, the gas barrier property with the transparent conductive film of the present invention was similarly used except that the polysilazane coating film before the modification by vacuum ultraviolet ray (VUV) irradiation was heated at a temperature of 250 ° C. Film 17 was produced.

<< Production of Gas Barrier Film 18 >>
In the production of the gas barrier film 13, the heating to the polysilazane coating film before modification by vacuum ultraviolet (VUV) irradiation, the stage temperature during the modification treatment, and the heating and baking after the formation of the conductive film are all performed at a temperature of 250 ° C. In the same manner as described above, a gas barrier film 18 with a transparent conductive film of the present invention was produced.

<< Production of Gas Barrier Film 19 >>
In the production of the gas barrier film 13, a comparative gas barrier was similarly prepared except that a polyethylene terephthalate film (manufactured by Teijin Ltd., ST504, Tg: 78 ° C.) was used as the support and the polysilazane coating was not heated. The conductive film 19 was produced.

<< Production of Gas Barrier Film 20 >>
The same polyimide-based film used for the production of the gas barrier film 1 as the support is used, and the method for forming the barrier layer is the same as the method for producing the barrier layer of sample 15 (ion) described in the examples of JP-A-2008-41640. A comparative gas barrier film 20 was produced in the same manner except that the plating method was changed.

<< Production of Gas Barrier Film 21 >>
In the production of the gas barrier film 20, a comparative gas barrier film 21 was produced in the same manner except that the heat treatment for the barrier layer was performed in an oven at 200 ° C.

  In addition, the catalyst concentration at the time of application | coating of a perhydropolysilazane layer, the humidity control after application | coating, the conditions at the time of vacuum ultraviolet-ray (VUV) irradiation, etc. were described in Table 1.

  Table 1 shows the configuration of each gas barrier film produced as described above.

  Details of the components abbreviated in Table 1 are as follows.

(Barrier layer)
<Formation method>
Forming method 1: Modification treatment after precursor coating Forming method 2: Ion plating method <Precursor material>
Precursor 1: Perhydropolysilazane (containing 1.0% amine catalyst)
Precursor 2: Perhydropolysilazane (no amine catalyst)
Precursor 3: Perhydropolysilazane (containing 5.0% amine catalyst)
<Support>
L-3430: Transparent polyimide film (manufactured by Mitsubishi Gas Chemical Company, Neoprim L, L-3430, Tg: 303 ° C.)
Microtron: Polyacrylamide film (Toray Industries, PA Mictron, Tg: 304 ° C.)
HF-6301: HF-6301 (Tg: 280 ° C.) manufactured by JSR Corporation
AF-100: Showa Denko KK, AF-100 (Tg: 250 <)
Type HM: Transparent polyimide film (Toyobo Co., Ltd., Type HM, Tg: 225 ° C.)
FST: Polyethersulfone film (Sumitomo Bakelite Co., Ltd., FST-5353, Tg: 223 ° C.)
SS-120: Polycarbonate film (manufactured by Teijin Limited, SS-120, Tg: 215 ° C.)
HT-100: Polycarbonate film (manufactured by Teijin Limited, HT-100, Tg: 115)
ST504: Polyethylene terephthalate film (manufactured by Teijin Limited, ST504, Tg: 78 ° C.)
<< Evaluation of water vapor transmission rate (WVTR) characteristics of gas barrier film >>
[Evaluation 1: Evaluation of bending resistance (60 ° C., 90% RH)]
For the gas barrier films 1 to 21, in order to confirm the change in gas barrier properties before and after bending, a gas barrier film that has been subjected to repeated bending 100 times at an angle of 180 degrees in advance so as to have a radius of curvature of 10 mm; The gas barrier film which was not subjected to the above bending treatment was measured for water vapor transmission rate (WVTR) according to the method described below, and was subjected to a seven-level rank evaluation to evaluate the gas barrier property.

(Measurement device of water vapor transmission rate)
Vapor deposition apparatus: Vacuum vapor deposition apparatus JEE-400 manufactured by JEOL Ltd.
Constant temperature and humidity oven: Yamato Humidic Chamber IG47M
(raw materials)
Metal that reacts with water and corrodes: Calcium (granular)
Water vapor-impermeable metal: Aluminum (φ3-5mm, granular)
(Preparation of vapor barrier evaluation cell)
Using a vacuum vapor deposition device (JEOL-made vacuum vapor deposition device JEE-400), vapor-deposited samples of gas barrier films (gas barrier films 1 to 18 and comparative gas barrier films 19 to 21) before attaching a transparent conductive film. Masking was performed except for the desired portion (9 locations of 12 mm × 12 mm), and metallic calcium was deposited.

  Thereafter, the mask was removed in a vacuum state, and aluminum was deposited from another metal deposition source on the entire surface of one side of the sheet. After aluminum sealing, the vacuum state is released, and immediately facing the aluminum sealing side through a UV-curable resin for sealing (made by Nagase ChemteX) on quartz glass with a thickness of 0.2 mm in a dry nitrogen gas atmosphere The cell for evaluation was produced by irradiating with ultraviolet rays.

  The obtained sample with both sides sealed is stored at 60 ° C. and 90% RH under high temperature and high humidity, and moisture permeated into the cell from the corrosion amount of metallic calcium based on the method described in JP-A-2005-283561. The amount was calculated.

(Rank evaluation)
7: Less than 1 × 10 ⁻⁵ g / m ² / day 6: 1 × 10 ⁻⁵ g / m ² / day or more, less than 5 × 10 ⁻⁵ g / m ² / day 5: 5 × 10 ⁻⁵ g / m ² / day or more, 1 × 10 ⁻⁴ g / m ² / day or less 4: 1 × 10 ⁻⁴ g / m ² / day or more, 1 × 10 ⁻³ g / m ² / day or less 3: 1 × 10 ^-3 g / m ² / day or more, less than 1 × 10 ⁻² g / m ² / day 2: 1 × 10 ⁻² g / m ² / day or more, less than 1 × 10 ⁻¹ g / m ² / day 1 : 1 × 10 ⁻¹ g / m ² / day or higher In the rank evaluation, the practically acceptable quality is rank 3 or higher.

[Evaluation 2: Evaluation of resistance to high temperature and high humidity]
About the obtained gas barrier films 1 to 21, without being bent, stored in a high-temperature and high-humidity tank (constant temperature and humidity oven: Yamato Humidic Chamber IG47M) adjusted to 85 ° C. and 90% RH for 100 hours continuously, The water vapor transmission rate was measured in the same manner as in the above evaluation 1, and the same rank evaluation was performed.

[Evaluation 3: Evaluation of cycle thermo resistance]
Each gas barrier film was subjected to a temperature / humidity cycle test under conditions in accordance with JIS C8938, and then the water vapor transmission rate was measured in the same manner as in Evaluation 1 above, and the same rank evaluation was performed.

  The results obtained as described above are shown in Table 1.

  As is clear from the results shown in Table 1, the gas barrier films 1 to 18 of the present invention each have a high gas barrier property (low water vapor transmission rate) and a high temperature compared to the comparative gas barrier films 19 to 21. It is clear that even when the humidity is increased or stored in a wider temperature range, it exhibits excellent barrier properties and excellent flexibility (cracking resistance).

Example 2
<< Production of Organic Photoelectric Conversion Elements 1-21 >>
Indium tin oxide (ITO) transparent conductive film deposited to 150 nm (sheet resistance 10Ω / □) on the gas barrier films 1 to 10 and 19 to 21 produced in Example 1 (heat treatment was performed before forming the conductive film) 1) and gas barrier films 11 to 18 having already been provided with a transparent conductive film (heat-treated after formation of the conductive film) are patterned to a width of 2 mm using a normal photolithography technique and wet etching. An electrode was prepared.

  The patterned first electrode was washed in the order of ultrasonic cleaning with a surfactant and ultrapure water, followed by ultrasonic cleaning with ultrapure water, dried with nitrogen blow, and finally subjected to ultraviolet ozone cleaning.

  On this transparent substrate, Baytron P4083 (manufactured by Starck Vitec), which is a conductive polymer, was applied and dried to a film thickness of 30 nm, and then heat treated at 150 ° C. for 30 minutes to form a hole transport layer. .

  Thereafter, the substrate was brought into a nitrogen chamber and manufactured in a nitrogen atmosphere.

First, the substrate was heat-treated at 150 ° C. for 10 minutes in a nitrogen atmosphere. Next, P3HT in chlorobenzene (plectrovirus Toro Nix Co., Ltd. regioregular poly-3-hexylthiophene) and PCBM (manufactured by Frontier Carbon Corporation: 6,6-phenyl _{-C 61} - butyric acid methyl ester) and 3.0 wt% Then, a liquid mixed at 1: 0.8 was prepared so that the film thickness was 100 nm while being filtered through a filter, and the film was allowed to stand at room temperature and dried. Subsequently, a heat treatment was performed at 150 ° C. for 15 minutes to form a photoelectric conversion layer.

Next, the substrate on which the series of functional layers is formed is moved into a vacuum deposition apparatus chamber, the inside of the vacuum deposition apparatus is depressurized to 1 × 10 ⁻⁴ Pa or less, and then fluorinated at a deposition rate of 0.01 nm / second. Laminate 0.6 nm of lithium, and then continue to deposit 100 nm of Al metal at a deposition rate of 0.2 nm / sec through a shadow mask with a width of 2 mm (vaporization is performed so that the light receiving part is 2 × 2 mm). A second electrode was formed.

  Each obtained organic photoelectric conversion element is moved to a nitrogen chamber and sealed with a sealing cap and a UV curable resin to produce organic photoelectric conversion elements 1 to 21 having a light receiving portion of 2 × 2 mm size. did.

  Subsequently, the gas barrier film sample for sealing and the organic photoelectric conversion element were sealed according to the following method.

  In an environment purged with nitrogen gas (inert gas), two gas barrier films 1 to 21 are used, and an epoxy-based photocurable adhesive is applied as a sealing material to the surface provided with the gas barrier layer Were produced as the respective sealing films 1 to 21 of the corresponding organic photoelectric conversion elements 1 to 21.

Next, the organic photoelectric conversion elements 1 to 21 are sandwiched and adhered between the adhesive application surfaces of the two gas barrier film samples coated with the adhesive, and then irradiated with UV light from one substrate side. Then, the organic photoelectric conversion elements 1 to 21 were sealed, and organic photoelectric conversion elements 1 to 18 having the gas barrier film of the present invention and comparative organic photoelectric conversion elements 19 to 21 were obtained.

<< Production of solar cells and evaluation of energy conversion efficiency >>
Evaluation of the organic photoelectric conversion elements 1 to 18 obtained above and the comparative organic photoelectric conversion elements 19 to 21 is performed by using the respective elements to produce solar cells 1 to 18 and comparative solar cells 19 to 21, respectively. The energy conversion efficiency was obtained, and the durability as an element was evaluated for each.

In addition, each evaluation of the organic photoelectric conversion elements 1-18 and the comparative organic photoelectric conversion elements 19-21 irradiates the light of the intensity | strength of 100 mW / cm < ² > of a solar simulator (AM1.5G filter), and the effective area is 4 A mask having a thickness of 0.0 mm ² was placed on the light receiving portion, and the IV characteristics of the solar cells 1 to 18 and the comparative solar cells 19 to 21 were evaluated.

Specifically, the short-circuit current density Jsc (mA / cm ² ), the open circuit voltage Voc (V), and the fill factor FF (%) were measured for each of the four light receiving portions formed on the element, and according to the following formula 1. A four-point average value of the obtained energy conversion efficiency PCE (%) was estimated.

Formula 1
PCE (%) = [Jsc (mA / cm ² ) × Voc (V) × FF (%)] / 100 mW / cm ²
The conversion efficiency as an initial battery characteristic obtained was measured, and the degree of deterioration over time was measured as the conversion efficiency remaining rate after the forced deterioration test stored for 2000 hours in a temperature 60 ° C., humidity 90% RH environment. It calculated | required as ratio of the conversion efficiency / initial conversion efficiency after a test, and durability was evaluated according to the following reference | standard.

5: Conversion efficiency residual ratio is 90% or more 4: Conversion efficiency residual ratio is 70% or more and less than 90% 3: Conversion efficiency residual ratio is 40% or more and less than 70% 2: Conversion efficiency residual ratio is 20 % Or more and less than 40% 1: The conversion efficiency remaining rate is less than 20%. It is rank 3 or more that can withstand practical use.

  The obtained results are shown in Table 2.

As is clear from the results shown in Table 2, each of the organic photoelectric conversion elements 1 to 18 having the gas barrier film of the present invention was compared with the comparative solar cells 19 to 21 provided with the comparative organic photoelectric conversion elements 19 to 21. solar cells 1 to 18 produced using the, 60 ° C., were found to exhibit a very high durability even in an extremely harsh environment of 90% RH (high temperature and high humidity conditions).

DESCRIPTION OF SYMBOLS 10 Bulk heterojunction type organic photoelectric conversion element 11 Substrate 12 Transparent electrode 13 Counter electrode 14 Photoelectric conversion part (bulk hetero junction layer)
14p p layer 14i i layer 14n n layer 14 'first photoelectric conversion unit 15 charge recombination layer 16 second photoelectric conversion unit 17 hole transport layer 18 electron transport layer

Claims (11)

  In the method for producing a gas barrier film having at least one gas barrier layer on a substrate, a step of applying a solution containing polysilazane to form a coating film, and then a step of modifying the resulting coating film And a step of irradiating with vacuum ultraviolet rays (VUV) during the step of modifying, and after the step of applying a solution containing the polysilazane to form a coating film, before the step of modifying A gas barrier film production comprising a step of heat-treating at a temperature of 150 ° C. or higher and a Tg temperature of a substrate or lower at least at one time selected from the reforming step and after the reforming step. Method.   The method for producing a gas barrier film according to claim 1, wherein the polysilazane is perhydropolysilazane.   The method for producing a gas barrier film according to claim 1 or 2, wherein the humidity in the step of modifying the coating film is adjusted to an atmosphere having a dew point temperature of 0 ° C or lower.   The method for producing a gas barrier film according to any one of claims 1 to 3, wherein a content of the reaction catalyst of the polysilazane in the solution containing the polysilazane is 5% by mass or less.   The method for producing a gas barrier film according to any one of claims 1 to 4, wherein the solution containing the polysilazane does not contain a reaction catalyst for the polysilazane.   6. The method for producing a gas barrier film according to claim 1, wherein an oxygen concentration at the time of the vacuum ultraviolet ray (VUV) irradiation is 500 ppm or more and 10,000 ppm or less.   The vacuum ultraviolet ray maximum irradiation intensity on the coating film surface containing polysilazane is 100 mW / cm 2 or more and 200 mW / cm 2 or less during the vacuum ultraviolet (VUV) irradiation step. A method for producing a gas barrier film according to claim 1.   8. The gas barrier film according to claim 7, wherein the modifying step further includes a step of irradiating a vacuum ultraviolet ray (VUV) with a maximum vacuum ultraviolet ray irradiation intensity of less than 100 mW / cm 2 on the coating film surface. Production method.   The gas barrier film has an intermediate layer between the base material and the gas barrier layer, and a coating film is formed by applying a solution containing the polysilazane on the intermediate layer. Item 9. The method for producing a gas barrier film according to any one of Items 1 to 8.   The method for producing a gas barrier film according to claim 9, wherein the intermediate layer is formed by curing an ultraviolet curable resin or a thermosetting resin on the substrate. It is a gas barrier film manufactured by the manufacturing method of the gas barrier film of any one of Claim 1 to 10 , Comprising: In the following evaluations 1-3, the water vapor transmission rate (WVTR) of a gas barrier film is Is less than 1 × 10 ⁻⁴ g / m ² / day .
[Evaluation 1: Evaluation of bending resistance (60 ° C., 90% RH)]
The water vapor transmission rate is measured in accordance with the method described below for a gas barrier film that has been subjected to repeated bending 100 times at an angle of 180 degrees in advance so that the curvature has a radius of 10 mm.
Using a vacuum vapor deposition apparatus, metal calcium is vapor-deposited by masking other than the vapor-deposited portion of the gas barrier film (9 locations of 12 mm × 12 mm).
Thereafter, the mask is removed in a vacuum state, and aluminum is vapor deposited from another metal vapor deposition source on the entire surface of one side of the sheet. After sealing with aluminum, the vacuum state is released, and in a dry nitrogen gas atmosphere, quartz glass with a thickness of 0.2 mm is made to face the aluminum sealing side via an ultraviolet curing resin for sealing, and then irradiated with ultraviolet rays. Thus, an evaluation cell is produced.
The obtained sample with both sides sealed is stored under high temperature and high humidity of 60 ° C. and 90% RH, and the amount of moisture permeated into the cell is calculated from the amount of corrosion that has reacted with the moisture of metallic calcium.
[Evaluation 2: Evaluation of high temperature and high humidity resistance (85 ° C., 90% RH)]
The gas barrier film is stored for 100 hours continuously in a high-temperature and high-humidity tank adjusted to 85 ° C. and 90% RH without being bent, and thereafter, the water vapor transmission rate is measured in the same manner as in Evaluation 1 above.
[Evaluation 3: Evaluation of cycle thermo resistance]
The gas barrier film is subjected to a temperature and humidity cycle test under conditions in accordance with JIS C8938, and then the water vapor transmission rate is measured in the same manner as in the evaluation 1.

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