JP5643488B2 - Manufacturing method of SOI wafer having low stress film - Google Patents

Description

  The present invention relates to an SOI wafer provided with a low-stress film useful in a micro electro mechanical systems (MEMS) process and a manufacturing method thereof.

  An SOI (Silicon On Insulator) substrate is widely used as a MEMS substrate typified by an acceleration sensor. In this substrate, a silicon substrate is used as a support substrate (handle substrate), and a single crystal silicon thin film is laminated through a thermal oxide film (Box layer: Buried oxide layer).

  The reason why the SOI substrate is widely used for the MEMS substrate is that when the handle substrate on the back surface is removed by chemical etching or the like, the oxide film functions as an etching stop layer, and only the SOI substrate which is a single crystal silicon thin film layer remains. This is to make use of the properties. At this time, although there is a certain etching selectivity between the silicon and the oxide film, the oxide film is required to have a certain thickness. When this Box layer is formed, it can be formed on either the handle substrate side or the donor substrate side, or both. Usually, when the SOI wafer is manufactured, this thermal oxide film is thick ( When it is formed on the handle substrate or both the handle substrate and the donor substrate, it is reasonable that the oxide film on the handle substrate side is thicker. This is because, when a thick thermal oxide film is formed on the donor substrate side, a high implantation acceleration voltage is required in the subsequent ion implantation process, and the cost of the apparatus is increased, and there are problems such as surface roughness due to ions implanted at a high acceleration voltage. This is because of this.

JP 2005-109203 A

  However, by performing a thick thermal oxidation process on the handle substrate side, a thermal oxide film having a strong stress (compressive stress) is formed on both sides of the handle substrate. Since the stress film is formed on both sides of the substrate, the substrate is hardly warped. However, when this substrate is used as a handle substrate and an SOI wafer substrate is produced and used as a MEMS substrate, a problem occurs. When removing the oxide film on the back surface in the MEMS process, a strong stress film remains only on one side, which causes problems in processes such as lithography, resist coating, and dry etching that require flatness. Further, defects such as cracks may be introduced into the film due to the stress concentrated on the SOI thin film.

  Thus, when used as a MEMS substrate, an SOI wafer provided with a low-stress film that does not cause problems in processes such as lithography, resist coating, and dry etching has been desired.

In view of the above circumstances, an object of the present invention is to provide an SOI wafer having a low-stress film that does not cause problems in processes such as lithography, resist coating, and dry etching when used as a MEMS substrate.
It is another object of the present invention to provide an SOI wafer manufacturing method capable of easily adjusting the stress of a low stress film.

In order to solve the above problems, the present invention provides an SOI wafer comprising a silicon substrate, a low stress film having a stress of an absolute value of 75 MPa or less on the silicon substrate, and a silicon thin film in this order. To do.
Further, in the present invention, a step of preparing a handle substrate which is a silicon substrate provided with a low stress film having a stress of an absolute value of 75 MPa or less, and hydrogen ions are implanted from the surface of a donor substrate which is a silicon substrate. A step of forming an implantation layer, a step of bonding the surface of the handle substrate on which the low-stress film is formed, and a surface of the donor substrate on which hydrogen ions are implanted; and mechanical impact on the hydrogen ion implantation layer And a peeling transfer step of peeling the hydrogen ion implanted layer and transferring a silicon thin film to the bonded handle substrate.

In the present invention, when used as a MEMS substrate, it is possible to provide an SOI substrate including a low stress film that does not cause a problem in processes such as lithography, resist coating, and dry etching.
In addition, it is possible to provide an SOI wafer manufacturing method capable of easily adjusting the stress of the low stress film.

Explanatory drawing which shows the manufacturing process of the SOI wafer which uses a silicon oxynitride film | membrane as a low stress film | membrane by PECVD method. Explanatory drawing which shows the manufacturing process of the SOI wafer which uses Si rich silicon nitride film as a low stress film | membrane by LPCVD method. The graph which shows the change of the stress before and after annealing of various oxide films. The graph which shows the change of the stress before and behind annealing of the silicon oxynitride film | membrane by adjustment of LF in PECVD method. Graph showing the change in stress in the Si-rich silicon nitride film by adjusting the NH ₃ gas flow rate in the LPCVD process.

  The preferred thickness of the handle substrate, which is a silicon substrate, is not particularly limited, but is preferably close to the thickness of the silicon substrate defined by SEMI or the like. This is because the semiconductor device is often set to handle a substrate having this thickness. From this viewpoint, the thickness is preferably 300 to 900 μm.

The low-stress film is not particularly limited, and silicon nitride film (Si-rich SiN) having a silicon content higher than that of silicon oxynitride (SiON) or stoichiometric Si ₃ N ₄ is preferable. Both of them do not contain a metal harmful to the semiconductor process, and have full CMOS (Complementary Metal Oxide Semiconductor) compatibility.
The composition of the _{SiON (Si x O y N z} ) is not limited particularly, x = 0.3~0.6, y = 0.3~0.5 , z = 0.05~0.2 Is preferred. Further, the composition of Si-rich SiN (Si _u N _v ) is not particularly limited, and an N / Si composition ratio of 0.8 to 1.3 is preferable. This is because, in these composition ranges, the stress of the low-stress film becomes an absolute value of 75 MPa or less, and no warpage of the SOI wafer is observed.
As a method for measuring the stress of the low-stress film, a curvature radius measurement method for calculating the film stress from the warpage of the wafer is used.
The thickness of the low-stress film is preferably 0.1 to 2.0 [mu] m, more preferably 0.2 to 1.0 [mu] m because the stress increases as the film becomes thicker.

Examples of the silicon thin film include, but are not limited to, a single crystal silicon thin film and the like. For example, the silicon thin film is a commercially available material grown by the Czochralski method, and its electrical characteristics such as its conductivity type and specific resistivity. The value, crystal orientation, and crystal diameter may be appropriately selected depending on the design value of the device provided with the SOI wafer manufactured by the method of the present invention, the process, the display area of the manufactured device, or the like.
The film thickness of the silicon thin film can be changed, for example, depending on the depth from the surface of the single crystal silicon wafer implanted with hydrogen ions to the hydrogen ion implanted layer, and is not particularly limited, but is preferably 300 to 500 nm, more preferably It is about 400 nm.

A thermal oxide film may be formed between the low-stress film and the silicon thin film, for example, by oxidizing the surface of a single crystal silicon substrate serving as a donor substrate for generating a silicon thin film with heat. This is because, for example, when performing hydrogen ion implantation, if implantation is performed through the thermal oxide film, an effect of suppressing channeling of implanted ions can be obtained. Further, this is because a stable interface is required between the silicon layer forming the device and the insulating film immediately below.
The thickness of the thermal oxide film is preferably 50 to 500 nm, and more preferably about 50 to 300 nm. This is because if the thickness is too thin, it is difficult to control the film thickness, and if the thickness is too thick, it takes too much time for growth and stress on the oxide film on the donor substrate side increases.

Hereinafter, an SOI wafer manufacturing method of the present invention will be described based on the example shown in FIGS. 1 and 2 using a silicon oxynitride film and a Si-rich silicon nitride film as a low stress film. Note that the present invention is not limited to this.
As shown in FIG. 1A, a handle substrate 10 which is a silicon substrate including a low stress film 11 having a stress having an absolute value of 75 MPa or less is prepared. For example, a silicon oxynitride film (SiON) is formed on one side of the handle substrate 10 as the low stress film 11, preferably by PECVD (Plasma Enhanced Chemical Vapor Deposition). In the PECVD method, SiH ₄ , N ₂ O, and NH ₃ are used as source gases, and ion species and radicals are removed from the source gas by high frequency (High Frequency: HF usually 13.56 MHz) plasma at 300 to 500 ° C. In this method, the target film is formed by applying the plasma to a substrate at a low frequency (LF, usually several hundreds of Hz). In this method, the density and composition of the silicon oxynitride film can be changed by changing the bias between electrodes for generating plasma. In addition, the composition and stress of the silicon oxynitride film can be adjusted by changing the composition of the source gas and the like.
As for the internal stress of the silicon oxynitride film, when the flow rate of SiH ₄ gas is fixed and the ratio of N ₂ O gas to NH ₃ gas is increased, the nitrogen ratio in the silicon oxynitride film increases, and the internal stress increases from the tensile stress. Since it changes to the compressive stress side, a low-stress silicon oxynitride film can be obtained by adjusting the N ₂ O gas flow rate. A preferred raw material gas composition is an example, but it is about SiH ₄ : N ₂ O: NH ₃ = 1: 20: 5. Nitrogen can also be added as the atmospheric gas. The gas composition is a reference value because it greatly depends on the structure and configuration of the apparatus.

  Annealing is preferably performed after the formation of the low stress film 11 such as a silicon oxynitride film. For example, annealing is preferably performed at 110 to 175 ° C. for 6 hours. A normal oxide film has a high compressive stress regardless of whether it is a thermal oxide film or an oxide film formed by a PECVD method or the like. The thermal oxide film is usually formed at a high temperature (preferably 800 ° C. or higher). When the oxide film whose stress is relaxed at this temperature returns to room temperature, it has a higher thermal expansion coefficient than that of the oxide film. This is because compressive stress is introduced when an insulating substrate (donor substrate) such as a substrate shrinks more than the oxide film. In particular, since the density of an oxide film produced by PECVD is lower than that of a thermal oxide film, a high-temperature (above CVD temperature) annealing process generally called baking is added after the CVD process, which further increases the compressive stress of the film. (Figure 3).

  In the PECVD method, the stress of the film can also be adjusted by changing the frequency of the LF (LF: Low Frequency) electrode (FIG. 4). From FIG. 4, it can be confirmed that the absolute value of the stress of the low stress film after annealing is lower than that before annealing. The frequency of the electrode is preferably 100 to 500 Hz, more preferably 300 Hz.

  In the step of preparing the handle substrate 10 including the low-stress film 11, polishing is performed so that the low-stress film 11 has a smoothness of 0.5 nm by RMS of JIS B0601 using an atomic force microscope (AFM). Is preferred. This is because the smoothness increases the adhesion during the subsequent bonding and enhances the bondability. Moreover, a preferable lower limit is about 0.1 to 0.2 nm because it is difficult to achieve smoothness below this.

As shown in FIG. 1B, a donor substrate 12 which is a single crystal silicon substrate is prepared. Hydrogen ions are implanted from the surface of the donor substrate 12 to form a hydrogen ion implanted layer 13. At this time, for example, the temperature of the donor substrate is set to 250 to 450 ° C., and a predetermined dose of hydrogen ions is implanted with an implantation energy capable of implanting the hydrogen ion implantation layer from the surface to a desired depth. As conditions at this time, for example, the implantation energy can be 50 to 100 keV, and the implantation dose can be 2 × 10 ¹⁶ to 1 × 10 ¹⁷ / cm ² .
As hydrogen ions to be implanted, hydrogen ions (H ⁺ ) having a dose of 2 × 10 ¹⁶ to 1 × 10 ¹⁷ (atoms / cm ² ), or 1 × 10 ^{16 to} 5 × 10 ¹⁶ (atoms / cm ² ). A hydrogen molecular ion (H ₂ ⁺ ) with a dose amount of is preferable. Particularly preferably, a hydrogen ion (H ⁺ ) with a dose of 8.0 × 10 ¹⁶ (atoms / cm ² ) or a hydrogen molecular ion (H ₂ ) with a dose of 4.0 × 10 ¹⁶ (atoms / cm ² ). ⁺ ). This is because the product produced with this dose has suitable fragility in the subsequent peeling transfer step.
The depth from the surface of the donor substrate implanted with hydrogen ions to the hydrogen ion implanted layer depends on the desired thickness of the silicon thin film provided on the handle substrate (silicon substrate), but is preferably 300 to 500 nm, more preferably It is about 400 nm. The thickness of the hydrogen ion implanted layer is such that it can be easily separated by mechanical impact, and is preferably about 200 to 400 nm, more preferably about 300 nm.

  In the step of forming the hydrogen ion implanted layer 13, the surface of the donor substrate 12 is previously oxidized by heat to form a thermal oxide film 14, and hydrogen ions are implanted from the surface to form the hydrogen ion implanted layer 13. Also good. The thermal oxide film can be formed by a general thermal oxidation method. In general, it is obtained by heat treatment at 800 to 1100 ° C. under normal pressure in an oxygen atmosphere or a water vapor atmosphere. This is because the effect of suppressing channeling of implanted ions can be obtained if hydrogen ions are implanted through the thermal oxide film.

Next, as shown in FIG. 1C, the surface of the handle substrate 10 on which the low-stress film 11 is formed and the surface of the donor substrate 12 on which hydrogen ions are implanted are bonded together. In this bonding step, plasma activation treatment or ozone treatment may be applied in advance to both or one of the surfaces of the handle substrate 10 and the donor substrate 12 to be bonded, and then bonded. By performing this surface activation treatment, it is possible to obtain a bonding strength at a level that can sufficiently withstand subsequent mechanical peeling.
When plasma activation treatment is performed, for example, a handle substrate and / or a donor substrate is placed in a vacuum chamber, and after introducing a plasma gas, the surface is exposed to a high-frequency plasma of about 100 W for about 5 to 10 seconds. To process. As a gas for plasma, when processing a donor substrate, when oxidizing the surface, plasma of oxygen gas, when not oxidizing, hydrogen gas, argon gas, or a mixed gas thereof or a mixed gas of hydrogen gas and helium gas Etc. When processing the handle substrate, any gas may be used.
When processing with ozone, a handle substrate and / or a donor substrate is placed in a chamber into which air is introduced, and after introducing a plasma gas such as nitrogen gas or argon gas, high-frequency plasma is generated in the atmosphere. The surface is treated with ozone by converting the oxygen into ozone. Either or both of plasma treatment and ozone treatment can be performed.

Next, as shown in FIG. 1D, a mechanical impact is applied to the hydrogen ion implanted layer 13 to peel off the hydrogen ion implanted layer 13, and the silicon thin film 15 is transferred to the bonded handle substrate 10. .
Since mechanical delamination is performed by giving an impact to the hydrogen ion implanted layer, there is no possibility of occurrence of thermal strain, cracks, delamination of the bonded surfaces, and the like due to heating. Peeling is preferably by cleavage from one end to the other end.
In order to give an impact to the hydrogen ion-implanted layer, for example, a jet of a fluid such as gas or liquid may be sprayed continuously or intermittently from the side surface of the wafer. If it is, it will not be specifically limited.

  In the peeling and transferring step, the bonded handle substrate 10 may be heat-treated in advance at 400 ° C. or lower, preferably 200 to 400 ° C., and mechanical impact may be applied to the hydrogen ion implanted layer 13. By performing this heat treatment, the bonding strength between the donor substrate and the handle substrate can be increased.

  Next, as shown in FIG. 1E, the MEMS substrate 16 can be obtained by chemically removing the back surface of the bonded handle substrate 10 onto which the silicon thin film 15 has been transferred, by etching or the like. .

Next, an example shown in FIG. 2 using a Si-rich silicon nitride film will be described.
As shown in FIG. 2A, a handle substrate 20 which is a silicon substrate including a low stress film 21 having a stress having an absolute value of 75 MPa or less is prepared. Si-rich silicon nitride films are preferably formed on both surfaces of the handle substrate 20 as the low-stress films 21 by LPCVD (Low Pressure Chemical Vapor Deposition). In the LPCVD method, SiH ₂ Cl ₂ and NH ₃ are used as source gases and heated at 770 to 800 ° C. In this method, the density of the silicon nitride film can be changed by increasing or decreasing the composition of SiH ₂ Cl ₂ or NH ₃ . Further, the stress of the silicon nitride film can be adjusted by changing the flow rate of NH ₃ . Here, when the flow rate of NH ₃ is preferably 15 to 35 sccm, more preferably 20 to 30 sccm, and particularly preferably about 25 sccm, the stress is close to 0 (FIG. 5). The preferable flow rates of the source gases SiH ₂ Cl ₂ and NH ₃ are about 300 and 30 sccm, respectively.

  In the step of preparing the handle substrate 20 including the low-stress film 21, polishing is performed so that the low-stress film 21 has a smoothness of 0.5 nm with an RMS of JIS B0601 using an atomic force microscope (AFM). Is preferred. This is because the smoothness increases the adhesion during the subsequent bonding and enhances the bondability. Moreover, a preferable lower limit is about 0.1 to 0.2 nm because it is difficult to achieve smoothness below this.

  As shown in FIG. 2B, a donor substrate 22 which is a single crystal silicon substrate is prepared. Hydrogen ions are implanted from the surface of the donor substrate 22 to form a hydrogen ion implanted layer 23. Details are as described above.

  In the step of forming the hydrogen ion implanted layer 23, the surface of the donor substrate 22 is previously oxidized by heat to form a thermal oxide film 24, and hydrogen ions are implanted from the surface to form the hydrogen ion implanted layer 23. Also good. Details are as described above.

  Next, as shown in FIG. 2C, the surface of the handle substrate 20 on which the low stress film 21 is formed and the surface of the donor substrate 22 on which hydrogen ions are implanted are bonded together. In this bonding step, plasma activation treatment may be performed on both or one of the surfaces of the handle substrate 20 and the donor substrate 22 to be bonded in advance, and then bonded. Details are as described above.

  Next, as shown in FIG. 2D, the hydrogen ion implanted layer 23 is mechanically impacted to peel off the hydrogen ion implanted layer 23, and the silicon thin film 25 is transferred to the bonded handle substrate 20. . In this peeling transfer step, the bonded handle substrate 20 may be heat-treated in advance at 400 ° C. or lower, preferably 200 to 400 ° C., to apply a mechanical impact to the hydrogen ion implanted layer 23. Details are as described above.

  Next, as shown in FIG. 2E, the MEMS substrate 26 can be obtained by chemically removing the back surface of the bonded handle substrate 20 onto which the silicon thin film 25 has been transferred, by etching or the like. .

  The MEMS substrate obtained by the above process can be used for the MEMS process and the like because the adsorption failure to the stage does not occur even in processes such as lithography, resist coating, and dry etching.

EXAMPLES Hereinafter, although this invention is demonstrated concretely using an Example etc., this invention is not limited to an Example.
<Stress change before and after annealing of silicon oxynitride film by adjusting frequency of electrode in PECVD method>
SiON was deposited on a silicon substrate having a thickness of 625 μm by PECVD at 350 ° C. and 2.6 Torr. The source gas used was SiH ₄ , N ₂ O, and NH ₃ , and the respective flow rates were 500, 8500, and 2500 sccm. The composition of the source gas was performed using a mass flow controller. The composition analysis was measured by the WDS (Wavelength Dispersive Spectrometry) method. The composition of Si _x O _y N _z was x = 0.51, y = 0.43, and z = 0.06. The frequency of the LF electrode was changed from 0 to 500 Hz, a SiON film having a thickness of 0.8 μm was formed on one side of the silicon substrate, and baking annealing at 1050 ° C. was performed for 30 minutes in a nitrogen atmosphere. The film stress of the SiON film at each frequency was measured using a curvature radius measurement method (using FLX manufactured by KLA Tencor). FIG. 4 shows the relationship with the film stress of the SiON film at each frequency. As shown in FIG. 4, the film stress of the SiON film deposited at a frequency near 300 Hz became almost zero after annealing.

<Change in stress of Si-rich silicon nitride film by adjusting NH ₃ gas flow rate in LPCVD method>
Si-rich SiN was deposited on a silicon substrate having a thickness of 625 μm by LPCVD at 775 ° C. and 200 Torr. The source gas used was SiH ₂ Cl ₂ or NH ₃ . The SiH ₂ Cl ₂ flow rate was 300 sccm, the NH ₃ flow rate was changed from 15 to 35 sccm, and a Si-rich SiN film having a thickness of 0.5 μm was deposited on both sides of the silicon substrate. The composition analysis was measured by the WDS (Wavelength Dispersive Spectrometry) method. The composition of Si _u N _v at each NH ₃ flow rate was u = 0.53 to 0.56 and v = 0.44 to 0.47. The film stress of the Si-rich SiN film at each NH ₃ flow rate was measured using a curvature radius measurement method (using FLX manufactured by KLA Tencor) (FIG. 5). From FIG. 5, when the flow rate of NH ₃ is around 25 sccm, the film stress becomes almost zero.

Reference example 1
SiON was deposited on a silicon substrate (handle substrate) having a thickness of 625 μm by PECVD at 350 ° C. and 2.6 Torr. The source gas used was SiH ₄ , N ₂ O, and NH ₃ , and the respective flow rates were 500, 8500, and 2500 sccm. The composition of the source gas was performed using a mass flow controller. The composition analysis was measured by the WDS (Wavelength Dispersive Spectrometry) method. The composition of Si _x O _y N _z was x = 0.51, y = 0.43, and z = 0.06. LF = 300 Hz was set, a film of about 3 μm was formed on one side of the handle substrate, and baking annealing at 1050 ° C. was performed for 30 minutes in a nitrogen atmosphere. The film stress at this time was measured by using a curvature radius measurement method (using FLX manufactured by KLA Tencor), and was almost zero. This handle substrate was subjected to CMP polishing using an atomic force microscope (AFM) so as to achieve a smoothness of 0.5 nm by RMS of JIS B0601. After forming a thermal oxide film of 200 nm in advance in an oxygen atmosphere at 1000 ° C., the thickness after hydrogen ion implantation was 625 μm under the conditions that the implantation energy was 55 keV and the implanted hydrogen ion dose was 8e16 atoms / cm ^2. A donor substrate (single crystal silicon substrate) is bonded to the surface by exposing it to high-frequency plasma of about 100 W using nitrogen as a plasma gas for 30 seconds after the plasma activation treatment, and heat treatment at 250 ° C. is performed for 24 hours to form a silicon thin film. The film was peeled off and transferred by a mechanical peeling method. When the warpage of the SOI wafer produced in this manner was measured, no warpage was observed.

Example 2
Si-rich SiN was deposited on a silicon substrate (handle substrate) having a thickness of 625 μm by LPCVD at 775 ° C. and 200 Torr. The source gas used was SiH ₂ Cl ₂ or NH ₃ . A flow rate of SiH ₂ Cl ₂ was set to 300 sccm, a flow rate of NH ₃ was set to 25 sccm, and a film of about 1 μm was deposited on both sides of the handle substrate. The composition analysis was measured by the WDS (Wavelength Dispersive Spectrometry) method. The composition of Si _u N _v was u = 0.56 and v = 0.44. This handle substrate was subjected to CMP polishing using an atomic force microscope (AFM) so as to achieve a smoothness of 0.5 nm by RMS of JIS B0601. After forming a thermal oxide film of 200 nm in advance in an oxygen atmosphere at 1000 ° C., the thickness after hydrogen ion implantation was 625 μm under the conditions that the implantation energy was 55 keV and the implanted hydrogen ion dose was 8e16 atoms / cm ^2. A donor substrate (single crystal silicon substrate) is bonded to the surface by exposing it to high-frequency plasma of about 100 W using nitrogen as a plasma gas for 30 seconds after the plasma activation treatment, and heat treatment at 250 ° C. is performed for 24 hours to form a silicon thin film. Transfer was performed by a mechanical peeling method. When the warpage of the SOI wafer produced in this manner was measured, no warpage was observed. Even when the Si-rich SiN on the back surface of the handle substrate was removed, no change in warpage was observed, and it was found that the SOI wafer was suitable for the MEMS process.

From Reference Example 1 and Example 2, the method of adjusting stress to near zero differs in the parameters to be adjusted depending on the apparatus and method. However, when silicon oxynitride or Si-rich silicon nitride film is used as the low stress film, it is easy. It was confirmed that the film stress can be adjusted.

  Further, it was confirmed that when the absolute value of the stress of the low-stress film is 75 MPa or less, no problem is caused in processes such as lithography, resist coating, and dry etching.

10 Handle substrate 11 Low stress film 12 Donor substrate 13 Hydrogen ion implantation layer 14 Thermal oxide film 15 Silicon thin film 16 MEMS substrate 20 Handle substrate 21 Low stress film 22 Donor substrate 23 Hydrogen ion implantation layer 24 Thermal oxide film 25 Silicon thin film 26 MEMS substrate

Claims (6)

The silicon content is higher than the stoichiometric Si ₃ N ₄ having a stress of an absolute value of 75 MPa or less, and the N / Si composition ratio (v / u) when expressed as Si _u N _v is 0.8 to Preparing a handle substrate which is a silicon substrate provided with a low stress film which is a silicon nitride film having a thickness of 0.1 to 2.0 μm which is 1.3;
A step of implanting hydrogen ions from the surface of a donor substrate which is a silicon substrate to form a hydrogen ion implanted layer;
Bonding the surface of the handle substrate on which the low-stress film is formed and the surface of the donor substrate on which hydrogen ions are implanted;
A peeling transfer step in which a mechanical impact is applied to the hydrogen ion implanted layer to peel the hydrogen ion implanted layer, and a silicon thin film is transferred to the bonded handle substrate;
A method for manufacturing an SOI wafer including:
The step of preparing the handle substrate is performed by LPCVD (Low Pressure Chemical Vapor Deposition) method using SiH ₂ Cl ₂ and NH ₃ as source gases, heated at 770 to 800 ° C., and the flow rate of NH ₃ being 15 to by varying in the range of 35sccm to adjust the stress of the silicon nitrided film, a method of manufacturing SOI wafers is to form the silicon nitride film on the silicon substrate.   2. The method for manufacturing an SOI wafer according to claim 1, wherein the step of preparing the handle substrate includes annealing at 110 to 175 ° C. after forming the silicon nitride film by the LPCVD method.   The step of forming the hydrogen ion implanted layer includes oxidizing the surface of the donor substrate with heat in advance to form a thermal oxide film, and implanting hydrogen ions from the surface to form a hydrogen ion implanted layer. A method for producing an SOI wafer according to claim 1.   The SOI according to any one of claims 1 to 3, wherein in the step of preparing a handle substrate including the low-stress film, the low-stress film is polished so as to have a smoothness of 0.5 nm by RMS. Wafer manufacturing method.   5. The SOI wafer according to claim 1, wherein the bonding step includes performing a plasma activation process on both or one of the surfaces to be bonded to the handle substrate and the donor substrate in advance, and then bonding the wafers. Manufacturing method.   The manufacturing method of an SOI wafer according to claim 1, wherein the peeling transfer step includes subjecting the bonded handle substrate to a heat treatment in advance at 400 ° C. or less to apply a mechanical impact to the hydrogen ion implanted layer. Method.

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