JP5490231B2 - 太陽電池素子およびその製造方法ならびに太陽電池モジュール - Google Patents
太陽電池素子およびその製造方法ならびに太陽電池モジュール Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 128
- 239000004065 semiconductor Substances 0.000 claims description 123
- 239000010410 layer Substances 0.000 claims description 120
- 238000002161 passivation Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 50
- 239000002344 surface layer Substances 0.000 claims description 48
- 239000007789 gas Substances 0.000 claims description 25
- 229910018557 Si O Inorganic materials 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 18
- 238000004381 surface treatment Methods 0.000 claims description 11
- 239000001569 carbon dioxide Substances 0.000 claims description 9
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 41
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 14
- 229910017604 nitric acid Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
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- 239000002019 doping agent Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000001747 exhibiting effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 230000005284 excitation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
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- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
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- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
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- 150000003378 silver Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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Description
図1〜3に示すように、太陽電池素子10は光が入射する受光面(以下、第1面という)10aとこの第1面10aの裏面に相当する非受光面(以下、第2面という)10bとを有する。また、太陽電池素子10は、例えば板状の半導体基体9(例えば、一導電型の半導体領域である半導体基板1と、この半導体基板1における第1面10a側に設けられた逆導電型の半導体領域である逆導電型層2とから構成される)と、半導体基体9における第1面10a側(本実施形態では、逆導電型層2の上)に設けられた反射防止層3と、第2面10b側に設けられた例えば正の固定電荷を有するパッシベーション層7とを備えている。
以下、太陽電池素子についてより具体的な例について説明する。p型の導電型を呈する結晶シリコン基板を用いる例を説明する。半導体基体9を構成する結晶シリコン基板からなる半導体基板1がp型を呈するようにする場合、ドーパント元素としては、例えばボロンまたはガリウムを用いるのが好適である。
主に図3を参照しながら太陽電池素子10の製造方法について説明する。
(1)フッ酸処理
(2)RCA洗浄(米国RCA社が開発した洗浄法であり、高温・高濃度の硫酸・過酸化水素水、希フッ酸(室温)、アンモニア水・過酸化水素水、または、塩酸・過酸化水素水などによる洗浄方法)の後にフッ酸処理
(3)SPM(Sulfuric Acid/Hydrogen Peroxide/Water Mixture)洗浄後にフッ酸処理
また、BSF領域6とこの上に設ける導電層である低抵抗金属電極を梯子状の形状にて形成する場合であっても、ラミネート時に裏面に高反射率のバックシートを用いることによって、高機能の裏面反射構造を実現することが可能である。なお、低抵抗金属電極の平面形状を第1電極4と類似形状である梯子状に形成する場合において、低抵抗金属電極の一部が半導体基板1とコンタクトする形状としてもよく、そのコンタクト部分のみにBSF領域6を設けてもよい。
本実施形態の太陽電池モジュールは、例えば、ガラス、樹脂または金属等の支持基板上に、1つの太陽電池素子10、または、導体により電気的に直列接続させた複数の太陽電池素子10を、耐湿性に優れた例えばEVA(Ethylene Vinyl Acetate)等の充填材にて封止した構成とすることが可能である。この場合、金属または樹脂等の枠体を支持基板の周囲に設けてもよい。
2 :逆導電型層
3 :反射防止層
4 :第1電極
4a :出力取出電極
4b :集電電極
5 :第2電極
5a:第1層
5b:第2層
6 :BSF領域
7 :パッシベーション層
7a:第1層
7b:第2層
8 :表層内部領域
9 :半導体基体
10 :太陽電池素子
10a:第1面
10b:第2面
Claims (10)
- p型半導体領域を有する半導体基体を備えた太陽電池素子であって、
前記p型半導体領域はその表層部にSi−O結合を有した表面から2〜10nmの深さの表層内部領域が設けられており、
該表層内部領域の上に窒化シリコンを含む正の固定電荷を有するパッシベーション層が設けられている太陽電池素子。 - 前記p型半導体領域はその表層部に前記表層内部領域に並んでp+型半導体領域がさらに設けられており、該p+型半導体領域の上に導電層が設けられている請求項1に記載の太陽電池素子。
- 前記表層内部領域および前記p+型半導体領域が交互に並設されている請求項2に記載の太陽電池素子。
- 前記p型半導体領域は結晶質シリコンを含む請求項1乃至3のいずれかに記載の太陽電池素子。
- 前記パッシベーション層は複数層からなる請求項1乃至4のいずれかに記載の太陽電池素子。
- p型半導体領域を有する半導体基体を準備する基板準備工程と、
前記p型半導体領域の表面を、酸素を含むガスを用いて形成されるプラズマに曝して、前記p型半導体領域の表層部にSi−O結合を有した表面から2〜10nmの深さの表層内部領域を形成する表面処理工程と、
前記表層内部領域の上に窒化シリコンを含む正の固定電荷を有するパッシベーション層を形成する層形成工程とを有する太陽電池素子の製造方法。 - 前記層形成工程は、前記表層内部領域の上に正の固定電荷を有するパッシベーション層を形成する工程である請求項6に記載の太陽電池素子の製造方法。
- 前記表面処理工程は、酸素および水素を含むガスを用いて形成されるプラズマに曝して、前記p型半導体領域の表層部にSi−O結合を有した表層内部領域を形成する工程である請求項6に記載の太陽電池素子の製造方法。
- 前記表面処理工程において、前記酸素を含むガスとして二酸化炭素ガスを用いる請求項6乃至8のいずれかに記載の太陽電池素子の製造方法。
- 請求項1乃至5のいずれかに記載の太陽電池素子を備えている太陽電池モジュール。
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