JP5230091B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP5230091B2 JP5230091B2 JP2006310941A JP2006310941A JP5230091B2 JP 5230091 B2 JP5230091 B2 JP 5230091B2 JP 2006310941 A JP2006310941 A JP 2006310941A JP 2006310941 A JP2006310941 A JP 2006310941A JP 5230091 B2 JP5230091 B2 JP 5230091B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- substrate
- emitting diode
- light
- diode element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 61
- 239000011347 resin Substances 0.000 claims description 32
- 229920005989 resin Polymers 0.000 claims description 32
- 238000005286 illumination Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000005253 cladding Methods 0.000 claims description 6
- 235000017060 Arachis glabrata Nutrition 0.000 claims description 3
- 244000105624 Arachis hypogaea Species 0.000 claims description 3
- 235000010777 Arachis hypogaea Nutrition 0.000 claims description 3
- 235000018262 Arachis monticola Nutrition 0.000 claims description 3
- 235000020232 peanut Nutrition 0.000 claims description 3
- 240000008042 Zea mays Species 0.000 claims description 2
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 claims description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 claims description 2
- 235000005822 corn Nutrition 0.000 claims description 2
- 230000000644 propagated effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 35
- 238000000605 extraction Methods 0.000 description 20
- 239000013078 crystal Substances 0.000 description 16
- 238000007789 sealing Methods 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 101100248200 Arabidopsis thaliana RGGB gene Proteins 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133613—Direct backlight characterized by the sequence of light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
- Liquid Crystal (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
0°,90°,対角45°、及び完全な拡散分布をそれぞれ示している。
50°範囲でピークを有する発光強度分布となり、上下0°左右90°方向に比べて、
1.2倍から1.3倍の増大が見られている。これは、対角コーナー方向から有効に光取り出しが行われていることを示す。
45°(30°以上60°以下)ずらした構成をとる。
(モジュール構成)としての発光分布を示す。
15°の範囲で高角度側へピークをシフトさせることが可能である。LED素子を封止する透明樹脂においても、対角コーナーを活用することにより、パッケージ構成の発光分布の制御が実現される。
19によるワイヤボンディング実装する。さらに、透明樹脂20を用いて、発光ダイオード素子18を封止することにより、図16及び図18に示す表面実装型のパッケージ構成が作製される。
20及び図21のパッケージを筺体に搭載する際には、三角格子状或いは千鳥状配置にして、実装貼り合わせしてある。上記にあるように、パッケージ構成の発光分布は、LED素子の実装配置及び透明樹脂の封止形状を制御することにより、上下左右方向に光取り出しを増大させた異方性の強い発光分布となっており、パッケージの筺体搭載の配置である三角格子状或いは千鳥状配置に適合している。図22及び図23のどちらの構成においても、照明装置及びバックライト光源として十分な輝度を達成し、面内における均一な輝度分布を実現することが可能である。また、パッケージ間の距離やパネル光学系との光学距離を適切に設定することにより、面内における均一な色度分布を実現することも可能である。
35及び大型液晶表示パネル36を組み込んで構成される。図26には、バックライトモジュール及び光学系を含む中小型液晶表示パネル37と、回路配線38、及び駆動回路
39の構成を示す。
2,16 配線
3,17 反射板
4,18 発光ダイオード素子
5,19 Auワイヤ
6,20 透明樹脂
7 単結晶基板
8 発光領域
9 透明電極層
10 正極電極
11 正極細線電極
12 負極電極
13 負極細線電極
14 基板凹凸形状
22 光源独立実装
23 光源同一実装用反射板
24 バックライトモジュール筺体
25 光源独立実装パッケージ構成
26 光源同一実装パッケージ構成
27 バックライト光線
28 拡散板
29 正プリズムシート
30 拡散フィルム
31 下部偏光板
32 薄膜トランジスタ回路とカラーフィルタ及び液晶パネル
33 上部偏光板
34 バックライト筺体
35 駆動回路
36 大型液晶表示パネル
37 バックライトモジュール及び光学系を含む中小型液晶表示パネル
38 回路配線
39 駆動回路
Claims (9)
- 発光ダイオード素子を複数実装して構成する照明装置において、
前記発光ダイオード素子は、基板と、前記基板上に結晶成長した発光層とクラッド層を有する発光領域と、負極電極と、正極電極と、を有し、
前記発光領域は、前記発光ダイオード素子の中心から前記基板の対角コーナーに至る方向を基準として略45度ずれた方向で、前記基板の稜線に向かって凸となって前記基板の稜線に至るように形成される対角コーナーを有し、
前記基板は、正方形状に形成され、
前記発光領域の対角コーナーは、当該対角コーナーが凸となって至るように形成される前記基板の稜線に対して略45度を成す2つの稜線によって形成され、
前記基板の対角コーナーでは、前記発光層および前記クラッド層が形成されず、前記基板の対角コーナーの稜線および前記発光領域の稜線によって囲まれる三角形状または多角形状の領域において前記基板が露出する、
照明装置。 - 前記基板は、前記三角形状または多角形状の領域で、エッチング加工した断面三角形状の複数の凹凸形状を有し、
前記複数の凹凸形状は、前記発光ダイオード素子の中心から前記基板の対角コーナーに至る方向に対して垂直となる方向に形成される、
請求項1に記載の照明装置。 - 前記発光ダイオード素子は配線基板上に複数実装し、
前記発光ダイオード素子における基板の対角コーナーを、配線の方向に位置するように実装した
請求項1又は2に記載の照明装置。 - 前記発光ダイオード素子は配線基板上に複数実装し、
かつ前記配線基板に対して三角格子配置又は千鳥配置に実装した
請求項1又は2に記載の照明装置。 - 請求項1又は2に記載の照明装置をバックライト光源として用いた
液晶表示装置。 - 前記発光ダイオード素子は、反射板を設けてある配線上に搭載実装されている構成をとり、
前記反射板の内周形状は左右両側の方向に対称なコーン状又はピーナッツ状であり、
前記反射板の内周領域の中心に前記発光層が配置し、
前記発光層は透明樹脂により封止される
請求項1又は2に記載の照明装置。 - 前記発光ダイオード素子は、反射板を設けずに配線上に搭載実装されている構成であり、
前記発光層を封止する透明樹脂は、左右両側の方向に対称なコーン状又はピーナッツ状の形状を有し、
前記透明樹脂の内周領域の中心に前記発光層が配置する
請求項1又は2に記載の照明装置。 - 前記発光領域及び前記基板は、それぞれ4個の対角コーナーを有する、
請求項1又は2に記載の照明装置。 - 前記発光ダイオード素子の中心部から前記対角コーナーの位置に向けて、導波路を設けてあることにより、前記対角コーナーから前記導波路を伝播した発光成分が出射する構成を有する
請求項1又は2に記載の照明装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006310941A JP5230091B2 (ja) | 2006-11-17 | 2006-11-17 | 液晶表示装置 |
CN200710169477A CN100590868C (zh) | 2006-11-17 | 2007-11-16 | 液晶显示装置 |
US11/941,108 US8017980B2 (en) | 2006-11-17 | 2007-11-16 | Liquid crystal display apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006310941A JP5230091B2 (ja) | 2006-11-17 | 2006-11-17 | 液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008130628A JP2008130628A (ja) | 2008-06-05 |
JP5230091B2 true JP5230091B2 (ja) | 2013-07-10 |
Family
ID=39416744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006310941A Active JP5230091B2 (ja) | 2006-11-17 | 2006-11-17 | 液晶表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8017980B2 (ja) |
JP (1) | JP5230091B2 (ja) |
CN (1) | CN100590868C (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8188682B2 (en) | 2006-07-07 | 2012-05-29 | Maxim Integrated Products, Inc. | High current fast rise and fall time LED driver |
CN101685795B (zh) * | 2008-09-22 | 2011-07-06 | 海立尔股份有限公司 | 轴对称发光二极管的制造方法 |
US8305401B1 (en) | 2009-04-27 | 2012-11-06 | Maxim Integrated, Inc. | Digital light management controller |
US9860946B2 (en) * | 2009-06-15 | 2018-01-02 | Maxim Integrated Products, Inc. | Circuit topology for driving high-voltage LED series connected strings |
WO2011037184A1 (ja) * | 2009-09-25 | 2011-03-31 | 京セラ株式会社 | 発光装置 |
JP5417109B2 (ja) * | 2009-09-30 | 2014-02-12 | 大日本スクリーン製造株式会社 | パターン描画装置および光源 |
US8742685B1 (en) | 2010-04-05 | 2014-06-03 | Maxim Integrated Products, Inc. | Magnetic amplifier assisted LED constant current sink overhead voltage regulation |
JP2013143463A (ja) * | 2012-01-11 | 2013-07-22 | Hitachi Consumer Electronics Co Ltd | 発光装置およびそれを用いたバックライトユニット、面光源装置および表示装置 |
DE102012221908A1 (de) * | 2012-11-29 | 2014-06-05 | Osram Gmbh | Leuchtmodul für eine Fahrzeug-Leuchtvorrichtung mit Halbleiterlichtquelle |
JP6447580B2 (ja) | 2016-06-15 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4242842C2 (de) * | 1992-02-14 | 1999-11-04 | Sharp Kk | Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung |
JPH06326358A (ja) * | 1993-03-17 | 1994-11-25 | Ricoh Co Ltd | 半導体発光素子 |
JPH0936472A (ja) * | 1995-07-14 | 1997-02-07 | Hitachi Ltd | 半導体レ−ザ素子 |
JPH0982587A (ja) * | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | 非方形電子チップの製造方法 |
JPH10200187A (ja) * | 1997-01-06 | 1998-07-31 | Fujitsu Ltd | 面発光半導体レーザ及びその製造方法 |
US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
GB2387024A (en) * | 2002-01-25 | 2003-10-01 | Arima Optoelectronic | Vcsel |
JP3878579B2 (ja) * | 2003-06-11 | 2007-02-07 | ローム株式会社 | 光半導体装置 |
KR100576853B1 (ko) * | 2003-12-18 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP2005197473A (ja) * | 2004-01-07 | 2005-07-21 | Rohm Co Ltd | 半導体発光素子 |
JP2005310680A (ja) * | 2004-04-23 | 2005-11-04 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
KR100616598B1 (ko) * | 2004-08-11 | 2006-08-28 | 삼성전기주식회사 | 발광 다이오드 렌즈 및 이를 구비한 백라이트 모듈 |
JP2006134975A (ja) * | 2004-11-04 | 2006-05-25 | Hitachi Displays Ltd | 照明装置及びこの照明装置を用いた表示装置 |
JP4796293B2 (ja) * | 2004-11-04 | 2011-10-19 | 株式会社 日立ディスプレイズ | 照明装置の製造方法 |
JP4626306B2 (ja) | 2005-01-11 | 2011-02-09 | 三菱化学株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP2006196658A (ja) * | 2005-01-13 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2006210730A (ja) | 2005-01-28 | 2006-08-10 | Toyoda Gosei Co Ltd | 発光素子 |
JP2006253298A (ja) * | 2005-03-09 | 2006-09-21 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
JP4856463B2 (ja) * | 2005-10-17 | 2012-01-18 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
JP2006210961A (ja) | 2006-05-10 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
JP2008060493A (ja) * | 2006-09-04 | 2008-03-13 | Rohm Co Ltd | 半導体発光装置およびその製造方法 |
-
2006
- 2006-11-17 JP JP2006310941A patent/JP5230091B2/ja active Active
-
2007
- 2007-11-16 US US11/941,108 patent/US8017980B2/en not_active Expired - Fee Related
- 2007-11-16 CN CN200710169477A patent/CN100590868C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8017980B2 (en) | 2011-09-13 |
CN101183674A (zh) | 2008-05-21 |
CN100590868C (zh) | 2010-02-17 |
US20080117649A1 (en) | 2008-05-22 |
JP2008130628A (ja) | 2008-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5230091B2 (ja) | 液晶表示装置 | |
JP6339161B2 (ja) | 発光素子パッケージ | |
EP2191521B1 (en) | Optical element coupled to low profile side emitting led | |
JP5936158B2 (ja) | 背面表面へ光学的に結合されるledを有する薄型エッジバックライト | |
TWI527988B (zh) | 發光裝置及應用其之照明單元 | |
CN102537780B (zh) | 发光器件模块和包括发光器件模块的背光单元 | |
TWI521273B (zh) | 背光單元 | |
WO2012004975A1 (ja) | 配光制御装置およびそれを用いた発光装置並びに配光制御装置の製造方法 | |
JP6703312B2 (ja) | 発光モジュールおよび面発光光源 | |
JP7319557B2 (ja) | 発光モジュール | |
JP2013026212A (ja) | バックライトユニット及びそれを用いたディスプレイ装置 | |
JP2010192347A (ja) | 光源モジュール、並びにこれを用いた照明装置,液晶表示装置、及び映像表示装置 | |
JP2009038302A (ja) | 照明装置及びその照明装置を備えた液晶表示装置 | |
JP2009186734A (ja) | 液晶表示装置 | |
JP7128411B2 (ja) | 発光装置、発光モジュール及びその製造方法 | |
US11391878B2 (en) | Light emitting module | |
JP2013026213A (ja) | バックライトユニット及びそれを用いたディスプレイ装置 | |
JP7197765B2 (ja) | 発光装置 | |
US9411089B2 (en) | Light source module and backlight unit having the same | |
CN112151655A (zh) | 发光模块 | |
EP4063945A1 (en) | Light-reflecting member and light source device | |
TWI848128B (zh) | 發光模組 | |
KR102425618B1 (ko) | 광원 패키지 및 그를 포함하는 백라이트 유닛 | |
TW202300817A (zh) | 分隔部件及面狀光源 | |
KR101664487B1 (ko) | 디스플레이 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090225 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100127 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100301 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20110112 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110520 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110725 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120308 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121026 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20121113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130213 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130220 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130319 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160329 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5230091 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |