JP4974452B2 - Method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a manufacturing method thereof. For example, the present invention relates to an electronic apparatus in which an electro-optical device typified by a liquid crystal display panel or a light-emitting display device having an organic light-emitting element is mounted as a component.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  The present invention also relates to a method for producing a substrate having a protective film having excellent barrier properties.

  In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

  Various applications using such an image display device are expected, but the use for portable devices is attracting attention. Currently, many glass substrates and quartz substrates are used, but they have the disadvantage of being easily broken and heavy. Further, in mass production, it is difficult to increase the size of a glass substrate or a quartz substrate, which is not suitable. Therefore, attempts have been made to form TFT elements on a flexible substrate, typically a flexible plastic film.

  However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, TFTs having better electrical characteristics cannot be formed than when formed on a glass substrate. Therefore, a high-performance liquid crystal display device or light emitting element using a plastic film has not been realized.

  In addition, the plastic film is not very high in barrier properties, and even if an attempt is made to provide a barrier protective film to compensate for it, the heat resistance is low, so the maximum temperature of the film formation process has to be lowered, and a good protective film Can not form. Therefore, an electronic device having high reliability using a plastic film has not been realized.

In particular, in an EL display device (panel) using an EL element, it is presumed that it is weak against moisture and requires an extremely high gas barrier property.

  In an EL display device (panel) using an EL element, moisture entering the inside causes a serious decrease in reliability, and causes deterioration in luminance from dark spots, shrinkage, and peripheral portions of the light emitting display device. The dark spot is a phenomenon in which the light emission luminance is partially lowered (including those that do not emit light), and occurs when a hole is formed in the upper electrode. Shrinking is a phenomenon in which luminance deteriorates from the end (edge) of a pixel.

  A display device having a structure for preventing the deterioration of the EL element as described above has been developed. There is a method in which the EL element is housed in an airtight container, the EL element is confined in a sealed space and shielded from the outside air, and a desiccant is provided in the sealed space while being isolated from the EL element (see, for example, Patent Document 1). .

  In addition, a sealing material is formed on the insulator on which the EL element is formed, and the sealed space surrounded by the cover material and the sealing material is filled with a filling material made of resin or the like using the sealing material, and is blocked from the outside. There is also a method (for example, refer to Patent Document 2).

  Further, Patent Document 3 discloses a configuration in which a water repellent protective film is coated on an electrode on a luminescence layer, and a plate such as glass is adhered thereon.

Patent Document 4 discloses a configuration in which a photocurable resin is applied, cured by light irradiation, and a two-layer film is sealed and mechanically protected.
Japanese Patent Laid-Open No. 9-148066 Japanese Patent Laid-Open No. 13-203076 Japanese Patent Laid-Open No. 10-106746 Patent 2793048

  Increasing the thickness of the passivation film made of an inorganic insulating film to prevent the intrusion of impurities into the semiconductor element, typically moisture or the like into the EL element, increases the stress and tends to cause cracks. Become.

  Further, when a protective film is formed on a substrate provided with an element, if an entire surface is formed by using a PCVD method or a coating method, an external extraction terminal portion is also covered. The process which exposes was needed. In the case of using the sputtering method, it is possible to selectively form a protective film using a metal mask, but there is a risk of causing sputtering damage to the element.

  In addition, when a glass substrate is used as a sealing substrate and the element is sealed by bonding, there is a drawback that the glass substrate is easily broken and becomes heavy.

The present invention provides a semiconductor device that is lightweight and has a highly reliable sealing structure that shields intruding impurities, typically moisture, which cause deterioration of element characteristics, and a manufacturing method thereof. The task is to do.

  Moreover, this invention makes it a subject to provide the method of producing the base material which has not only an electronic device but the protective film excellent in barrier property.

The present invention is characterized in that a protective film having a high gas barrier property is formed in advance on a heat resistant substrate other than the substrate provided with the element, and only the protective film is transferred to the substrate provided with the element. Examples of the adhesive for transferring include reaction curing type, thermosetting type, photocuring type, and anaerobic type. The composition of these adhesives may be any, for example, epoxy, acrylate, or silicone.

  Further, in the present invention, since the protective film is formed in advance, as the process for sealing, it is only necessary to peel or transfer the protective film, and the sealing can be performed in a short time. Conventionally, it is necessary to prevent moisture from being mixed even during the formation of a protective film on the element, making it difficult to seal in a short time.

  Also, a protective film with a high gas barrier property is formed in advance on another heat-resistant substrate from the substrate provided with the element, and after transferring only the protective film to the plastic substrate, the element is provided using the plastic substrate as a sealing film. The substrate may be attached and sealed.

  INDUSTRIAL APPLICABILITY The present invention is effective when sealing with a protective film having a high gas barrier property that may cause some damage to the device if it is intended to form a film directly on the device. For example, it is preferable to use a film obtained by applying and baking a solution containing polysilazane or a siloxane polymer, a photocurable organic resin film, a thermosetting organic resin film, or the like as the protective film having a high gas barrier property.

When a solution containing polysilazane is applied and fired directly on the element, a firing temperature of 120 ° C. to 450 ° C., preferably 250 ° C. to 400 ° C. is required. Therefore, the element or substrate must be able to withstand this firing temperature. In addition, degassing such as hydrogen and ammonia occurs when a solution containing polysilazane is baked. Similarly, there is a concern that various degassing may occur during firing of the organic resin film, and these degassing may affect the element. Also, since spin coating is performed at atmospheric pressure, it is difficult to lower the dew point. In particular, in a light-emitting element using a layer containing an organic compound as a light-emitting layer, it is easily damaged by moisture, ultraviolet rays, degassing, or heat, and it is difficult to directly form a protective film that covers the light-emitting element.

In addition, the coating method requires spin treatment and baking, and there is a risk of moisture being mixed between these steps. The present invention only transfers the protective film by the coating method, and does not directly form the protective film on the element, so that there is no fear of moisture entering the element by the coating process.

As other protective films having high gas barrier properties, a dense inorganic insulating film (SiN, SiNO film, etc.) by PCVD method, a dense inorganic insulating film (SiN, SiNO film, etc.) by sputtering method, and carbon as a main component. It is preferable to use a thin film (DLC film, CN film, amorphous carbon film), a metal oxide film (WO ₂ , CaF ₂ , Al ₂ O _3, etc.).

A diamond-like carbon film (also referred to as a DLC film) is formed by plasma CVD (typically, RF plasma CVD, microwave CVD, electron cyclotron resonance (ECR) CVD, hot filament CVD, etc.), combustion It can be formed by flame method, sputtering method, ion beam vapor deposition method, laser vapor deposition method or the like. The reaction gas used for film formation was hydrogen gas and a hydrocarbon gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.), ionized by glow discharge, and negative self-bias was applied. Films are formed by accelerated collision of ions with the cathode. The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as the reaction gas. The DLC film and the CN film are insulating films that are transparent or translucent to visible light, depending on the film thickness. Transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light means that the visible light transmittance is 50 to 80%.

  In the present invention, since the protective film does not have to be formed directly on the element, the film forming conditions of the protective film are not limited, and a dense film can be obtained by high-density plasma.

  Conventionally, when the protective film is thick, there is a problem that cracks are likely to occur due to stress.

  Therefore, the present invention uses a laminated film using an organic resin film as a stress relaxation film (a laminated film in which an inorganic insulating film, an organic resin film, and an inorganic insulating film are sequentially formed, or a laminated structure of three or more layers) as a protective film. Cracks can be prevented and the total thickness of the protective film can be increased.

Furthermore, according to the present invention, the device can be sealed while the terminal portion is exposed by partially transferring these protective films. In the present invention, the laminated protective film can also be transferred. Conventionally, when a protective film is formed on an element, if a coating method in which the entire surface is formed is used, even the terminal part may be formed, or the electrode surface of the terminal part may be modified by plasma, There was a risk of causing element destruction by plasma.

  The present invention is also effective in a top emission type light emitting device in which the light-transmitting property of the protective film is important. Only a protective film having a high gas barrier property can be attached without using a transparent substrate for sealing that slightly lowers the transmittance.

  Further, the present invention is not limited to the light emitting device, and can be applied to any protective film. For example, it can be used for a protective film of a card or an overcoat layer of a plastic product.

Configuration 1 of the invention disclosed in this specification includes a step of forming a layer to be peeled including a protective film made of an inorganic insulating film on a first substrate, and a material soluble in a solvent on the layer to be peeled including the protective film Forming a film; attaching a second substrate with a first double-sided tape on the material film; and attaching a third substrate with a second double-sided tape below the first substrate. And a step of separating the first substrate, the second double-sided tape, and the third substrate from the layer to be peeled including the protective film, and an adhesive to the layer to be peeled including the protective film. A step of attaching a base material; a step of removing the second substrate; a step of removing the first double-sided tape; and a step of removing the material film by dissolving it in a solvent. It is the preparation method of the base material to do.

  In the configuration 1, the base material is a film base material. In the above configuration 1, the inorganic insulating film is an SOG film. Through the above manufacturing process, a film substrate in which an SOG film that needs to be fired at a temperature higher than the heat resistant temperature of the plastic substrate is fixed with an adhesive layer can be obtained.

  In addition, when applied to a method for manufacturing a semiconductor device, Configuration 2 of another invention includes a step of forming a layer to be peeled including a protective film made of an inorganic insulating film on a first substrate, and a film including the protective film. A step of forming a material film soluble in a solvent on the release layer; a step of attaching a second substrate with a first double-sided tape on the material film; and a second double-sided tape under the first substrate A step of attaching a third substrate, a step of separating the first substrate, the second double-sided tape, and the third substrate from a layer to be peeled including the protective film, and the protective film. A step of attaching a fourth substrate to the layer to be peeled with an adhesive, a step of removing the second substrate, a step of removing the first double-sided tape, and removing the material film by dissolving it in a solvent And the protective film so as to cover the semiconductor element provided on the fifth substrate. A method for manufacturing a semiconductor device, characterized in that it comprises a step of attaching a fourth substrate to free the release layer is provided, the.

  In addition, the protective film can have a laminated structure, and the configuration 3 of another invention is to form a layer to be peeled including a protective laminated film composed of a laminate of an inorganic insulating film and a coating film on the first substrate. A step of forming a material film soluble in a solvent on the layer to be peeled including the protective laminated film, a step of attaching a second substrate on the material film with a first double-sided tape, and the first A step of attaching a third substrate with a second double-sided tape to the lower side of the substrate, the first substrate, the second double-sided tape, the third substrate, and a peel-off layer including the protective laminated film Removing the first substrate, removing the second substrate, removing the first double-sided tape, removing the first substrate, attaching the fourth substrate to the layer to be peeled including the protective laminated film, and removing the second substrate. A step of dissolving the material film with a solvent and removing the material film, and a fifth substrate. A method for manufacturing a semiconductor device, characterized in that it comprises a step of attaching a fourth substrate layer to be peeled including the protective laminate film so as to cover the conductor element is provided, the.

In the configurations 2 and 3, the second substrate and the third substrate are substrates having higher rigidity than the first substrate, and the fourth substrate is a film substrate. It is said. In the above structures 2 and 3, the inorganic insulating film is a silicon oxide film, a silicon nitride film, or a silicon oxynitride film formed by a PCVD method, a sputtering method, or a coating method. Further, in the above configurations 2 and 3, the coating film is an organic resin film or an SOG film.

  Further, in the above configurations 2 and 3, the protective laminated film is a film in which the inorganic insulating film and the coating film are alternately laminated. By using the coating film as a stress relaxation film, a protective laminated film free from cracks can be realized.

  In addition, the structure of the semiconductor device obtained by each of the above structures relating to the manufacturing method is also one aspect of the present invention, and the structure of the semiconductor element provided on the substrate includes a first adhesive layer that covers the semiconductor element, A semiconductor device is sealed with a flat protective film or a flat protective laminated film fixed to a film substrate with a second adhesive layer.

Further, in the configuration 4 of another invention, as shown in FIG. 3 as an example, a step of forming a layer to be peeled including a protective film on the first substrate, and bonding the layer to be peeled to the second substrate Providing a first adhesive material to:
Peeling the layer to be peeled from the first substrate, forming a device on a third substrate, bonding the layer to be peeled and the device with a second adhesive material, Removing the first adhesive material and peeling the second substrate from the layer to be peeled. A method for manufacturing a semiconductor device, comprising:

  In addition, as shown in FIG. 1 as an example, the configuration 5 of another invention includes a step of forming a layer to be peeled including a protective film on the first substrate, and bonding the layer to be peeled to the second substrate. A step of providing a first adhesive material, a step of peeling the layer to be peeled from the first substrate, a step of bonding the layer to be peeled and a third substrate with a second adhesive material, Removing the first adhesive material to peel the second substrate from the layer to be peeled, forming a device on the fourth substrate, and bonding the peeled layer and the device to the third And a step of bonding with a material.

  Further, in the configuration 6 of another invention, as shown in FIG. 4, for example, a step of forming a layer to be peeled including a protective film on the first substrate and a step of forming an element on the second substrate A step of forming a sealing material that surrounds the element, a step of forming an adhesive material that covers the element in a region surrounded by the sealing material, a step of bonding the adhesive material and the layer to be peeled, And a step of peeling the first substrate from the peeling layer.

  Further, in any one of the above configuration 4, configuration 5, or configuration 6, as shown in FIG. 2 as an example, the step of forming the layer to be peeled including the protective film on the first substrate includes the first step Forming a first protective film on the substrate; forming a stress relaxation film on the first protective film; and forming a second protective film on the stress relaxation film. It is characterized by.

  In any one of Configuration 4, Configuration 5, or Configuration 6, the element includes a light emitting element or a semiconductor element.

  In any one of the above-described configurations 4, 5, and 6, the protective film includes at least one of an inorganic insulating film and an SOG film.

  In any one of the above-described configurations 4, 5, and 6, the layer to be peeled includes a stress relaxation film, and the stress relaxation film is an organic resin film or an SOG film.

  In any one of the above-described configuration 4, configuration 5, or configuration 6, the first adhesive material is a material that is soluble in a solvent or a double-sided tape.

Each of the above structures is effective for a light-emitting device having an EL element that requires a particularly high barrier property among semiconductor devices, and the light-emitting device is applied to either an active matrix type or a passive matrix type. be able to.

Note that the light-emitting element (EL element) includes a layer containing an organic compound (hereinafter, referred to as an EL layer) from which luminescence generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, which are produced according to the present invention. The light emitting device can be applied to either light emission.

A light-emitting element having an EL layer (EL element) has a structure in which the EL layer is sandwiched between a pair of electrodes. The EL layer usually has a stacked structure. Typically, a stacked structure of “a hole transport layer, a light emitting layer, and an electron transport layer” can be given. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure.

  In addition, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, or a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked on the anode. Good structure. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. These layers may all be formed using a low molecular weight material, or may be formed using a high molecular weight material. Alternatively, a layer containing an inorganic material may be used. Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer.

  In the light emitting device of the present invention, the screen display driving method is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

Further, in a light emitting device in which a video signal is digital, there are a video signal input to a pixel having a constant voltage (CV) and a constant current (CC). A video signal having a constant voltage (CV) includes a constant voltage (CVCV) applied to the light emitting element and a constant current (CVCC) applied to the light emitting element. In addition, a video signal having a constant current (CC) includes a constant voltage (CCCV) applied to the light emitting element and a constant current (CCCC) applied to the light emitting element.

  In the light emitting device of the present invention, a protection circuit (such as a protection diode) for preventing electrostatic breakdown may be provided.

  The present invention can be applied regardless of the TFT structure. For example, a top gate TFT, a bottom gate (inverse staggered) TFT, or a forward staggered TFT can be used. Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  Further, the TFT electrically connected to the light emitting element may be a p-channel TFT or an n-channel TFT. In the case of connecting to a p-channel TFT, the cathode may be formed after being connected to the anode and sequentially laminating a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer on the anode. In the case of connecting to an n-channel TFT, the anode may be formed after being connected to the cathode and sequentially laminating the electron transport layer, the light emitting layer, the hole transport layer, and the hole injection layer on the cathode.

As the active layer of the TFT, an amorphous semiconductor film, a semiconductor film including a crystal structure, a compound semiconductor film including an amorphous structure, or the like can be used as appropriate. Further, the active layer of the TFT is a semiconductor having an intermediate structure between an amorphous structure and a crystal structure (including single crystal and polycrystal) and having a third state that is stable in terms of free energy, and has a short distance. A semi-amorphous semiconductor film (also referred to as a microcrystalline semiconductor film or a microcrystal semiconductor film) including a crystalline region having order and lattice strain can be used. The semi-amorphous semiconductor film includes crystal grains of 0.5 to 20 nm in at least a part of the film, and the Raman spectrum is shifted to a lower wave number side than 520 cm ⁻¹ . In addition, diffraction peaks of (111) and (220) that are derived from the Si crystal lattice in X-ray diffraction are observed in the semi-amorphous semiconductor film. In addition, the semi-amorphous semiconductor film contains at least 1 atomic% or more of hydrogen or halogen as a neutralizing agent for dangling bonds. As a method for manufacturing a semi-amorphous semiconductor film, a silicide gas is formed by glow discharge decomposition (plasma CVD). As the silicide gas, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF ₄ or the like can be used. This silicide gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is generally in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less, preferably 100 to 250 ° C. As an impurity element in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon are desirably 1 × 10 ²⁰ cm ⁻¹ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ / cm ³ or less, preferably 1 × 10 ¹⁹ / cm ³ or less The field effect mobility μ of a TFT using a semi-amorphous semiconductor film as an active layer is 1 to 10 cm ² / Vsec.

The present invention can realize a semiconductor device that is lightweight and has a highly reliable sealing structure by blocking intruding impurities, typically moisture, which cause deterioration of element characteristics.

  Embodiments of the present invention will be described below.

(Embodiment 1)
Here, a peeling method using a metal film and a silicon oxide film described in JP-A-2003-174153 is used. In the peeling and transfer technique described in Japanese Patent Laid-Open No. 2003-174153, when a metal layer is formed on a substrate and an oxide layer is formed thereon, the metal oxide layer of the metal layer is divided into a metal layer and an oxide layer. This is a peeling method in which the metal oxide layer is formed at the interface and peeled in a later process.

  Specifically, a tungsten film is formed over a glass substrate by a sputtering method, and a silicon oxide film is stacked by the sputtering method. When the silicon oxide film is formed by sputtering, an amorphous tungsten oxide layer is formed. Then, an element such as a TFT is formed on the silicon oxide film, and the tungsten oxide layer is crystallized by performing a heat treatment at 400 ° C. or higher in the element formation process. When a physical force is applied, peeling occurs in the tungsten oxide layer or at the interface. The layer to be peeled (including elements such as TFT) thus peeled is transferred to a plastic substrate.

  Here, only the protective film having a high barrier property is transferred to the plastic substrate as the layer to be peeled.

  First, a metal film 11, here a tungsten film (thickness 10 nm to 200 nm, preferably 30 nm to 75 nm) is formed on the heat-resistant substrate 10 by sputtering, and the oxide film 12, here, without being exposed to the atmosphere. A silicon oxide film (film thickness: 150 nm to 200 nm) is stacked. It is desirable that the thickness of the oxide film 12 be at least twice that of the metal film. During the formation of the stacked layer, although not shown in FIG. 1, an amorphous metal oxide film (tungsten oxide film) is formed between about 2 nm to 5 nm between the metal film 11 and the silicon oxide film 12. When separation is performed in a later step, separation occurs in the tungsten oxide film, at the interface between the tungsten oxide film and the silicon oxide film, or at the interface between the tungsten oxide film and the tungsten film.

Note that since sputtering is performed on the substrate end surface, it is preferable to selectively remove the tungsten film, the tungsten oxide film, and the silicon oxide film formed on the substrate end surface by O ₂ ashing or the like.

  Next, a peeled layer 13 made of an SOG film is formed by a coating method. (FIG. 1A) The layer 13 to be peeled is not particularly limited as long as it is a film that functions as a protective film. For example, an inorganic insulating film (silicon oxide film, silicon nitride film, oxynitride obtained by PCVD or sputtering) Silicon film, carbon-based thin film (DLC film, CN film, amorphous carbon film, etc.), or SOG film obtained by coating method (for example, SiOx film containing alkyl group using siloxane coating film, polysilazane coating) An SiOx film using a film) can be used.

  Here, a solution in which polysilazane is dissolved in a solvent is applied by spin coating, and then baked to form a SiOx film. Note that xylene, dibutyl ether, and cyclohexane may be used as the solvent. When a solution containing polysilazane is applied and baked, a baking temperature of 120 ° C. to 450 ° C., preferably 250 ° C. to 400 ° C. is necessary. Therefore, the heat resistant substrate 10 must be a material that can withstand this baking temperature. Therefore, although a solution containing polysilazane cannot be applied and baked on a plastic substrate, the process of the present invention described later is performed by applying and baking the heat resistant substrate 10 in advance and then transferring it to the plastic substrate.

Further, the film immediately after coating is an inorganic polymer composed only of Si—H, N—H, and Si—N bonds, but is converted into a silica thin film when fired in an atmosphere containing moisture. The density of the silica thin film obtained by firing at 450 ° C. can be 2.1 to 2.2 g / cm ³ . When the film thickness is increased, the shrinkage rate during firing can be lowered by lowering the firing temperature. The silica thin film thus obtained has a higher yield than a film obtained by the sol-gel method, and a dense film can be obtained. In the sol-gel method, some organic groups remain, so that a dense film cannot be obtained and the film thickness limit is as low as 0.5 μm or less.

  Further, when a solution containing polysilazane is applied and baked, a SiN film can be formed by baking at 800 ° C. or higher in an atmosphere containing nitrogen.

  In addition, by performing heat treatment at 410 ° C. or higher during the coating and baking, the amorphous metal oxide film is crystallized, and a metal oxide film (not shown) having a crystal structure is obtained. By performing the heat treatment at 410 ° C. or higher, a metal oxide film having a crystal structure is formed, and hydrogen is diffused. When the heat treatment at 410 ° C. or higher is completed, a relatively small force (for example, human hand, wind pressure of gas blown from a nozzle, ultrasonic wave, etc.) is applied to the tungsten oxide film or the tungsten oxide film. Separation can occur at the interface between the silicon oxide film and the interface between the tungsten oxide film and the tungsten film. Note that when heat treatment is performed at a temperature at which a metal oxide film having a crystal structure is obtained, the thickness of the metal oxide film is slightly reduced.

  In addition, when a tungsten film is used as the metal film 11, it is preferable to perform a heat treatment at 410 ° C. or more. However, when a molybdenum film or an alloy film of tungsten and molybdenum is used, peeling is not particularly required. It can be carried out.

  In order to further improve the barrier properties, a SiN film may be laminated on the silica thin film by PCVD or sputtering.

  Next, the second substrate 15 (fixed substrate) is attached to the layer to be peeled 13 with the first adhesive 14 (or the first double-sided tape). (FIG. 1B) The fixed substrate 15 is preferably attached under reduced pressure so that bubbles do not enter the bonding surface. Since the layer to be peeled 13 is formed by a coating method and functions as a planarizing film, it can be directly bonded to the second substrate with a double-sided tape. A material that can be removed later (for example, an adhesive that is soluble in water or alcohols) may be used as the first adhesive 14.

  Next, in order to facilitate the subsequent peeling process, a process for partially reducing the adhesion between the metal film 11 and the oxide film 12 is performed. In the treatment for partially reducing the adhesion, a pressure or strong light irradiation is locally applied from the outside along the periphery of the region to be peeled to damage the oxide film 12 or a part of the interface. . For example, a scriber device or a laser beam irradiation device is used.

  Next, the first substrate 10 provided with the metal film 11 is peeled off by physical means. (FIG. 1C) The film can be peeled off with a relatively small force (for example, human hand, wind pressure of gas blown from a nozzle, ultrasonic wave, etc.).

  Even if the second fixed substrate is attached to the lower side of the first substrate 10 with the second double-sided tape before the first substrate 10 is peeled off, it is possible to protect the substrate 10 from being broken by the peeling process. Good.

  Thus, the layer to be peeled formed on the silicon oxide layer 12 can be separated from the first substrate 10. The state after peeling is shown in FIG.

Next, the third substrate 17 made of a plastic film is bonded to the oxide layer 12 side with the second adhesive 16. (FIG. 1E) The third substrate 17 is also preferably attached under reduced pressure so that bubbles do not enter the bonding surface. Examples of the second adhesive 16 include various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive. As the material of the third substrate 17, a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide may be used. Moreover, you may use the HT board | substrate (made by Nippon Steel Chemical Co., Ltd.) whose Tg is 400 degreeC or more.

  Next, the first adhesive 14 (or the first double-sided tape) and the fixed substrate 15 are separated. (FIG. 1 (F)) If the fixed substrate 15 is bonded using a double-sided tape, it may be peeled off sequentially. If the fixed substrate 15 is bonded using an adhesive that is soluble in a solvent, Just soak and melt.

  Through the steps so far, a substrate (here, a plastic film) having a protective film (here, a dense silica film) having excellent barrier properties can be manufactured. The base material having a protective film with excellent barrier properties is not limited to electronic devices, and can be applied as a base material in a wide range of fields. By making it possible to peel a thin film that could not be formed in the process unless it is conventionally a heat-resistant substrate, it is possible to provide a plastic film having a protective film with excellent barrier properties by being easily transferred to a plastic substrate. .

  The substrate having a protective film excellent in barrier properties in the present invention can be a coating film of various materials. For example, it is useful for card coating films made of plastic, window coating films, display screen coating films, metal part coating films, and the like.

  And in order to seal the element 20 provided in the 4th board | substrate 18, the base material which has a protective film excellent in barrier property with the 3rd adhesive material 19 is affixed. (FIG. 1 (G)) As the third adhesive 19, various curable types such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive. An adhesive is mentioned. Further, the third adhesive 19 may include a gap material (such as a fiber or a spacer) that keeps the distance between the substrates.

  The element 20 includes various semiconductor elements typified by TFTs (thin film diodes, photoelectric conversion elements and silicon resistance elements made of silicon PIN junctions), memories, piezoelectric elements, liquid crystal elements, electrophoretic elements, EL elements, coils. , Inductor, capacitor, micro magnetic device, or a combination thereof.

(Embodiment 2)
The first embodiment is an example in which a single-layer protective film is mainly described. Here, an example in which a protective laminated film laminated with a stress relaxation layer interposed therebetween is peeled off and transferred is shown in FIG. Show. Since all the parts other than the part in which the protective film is a protective laminated film are the same as those in the first embodiment, detailed description is omitted. In FIG. 2, the same parts as those in FIG.

First, in the same manner as in Embodiment Mode 1, the metal layer 11 and the oxide layer 12 are formed over the first substrate 10. Then, an inorganic insulating film to be the first protective film 33a is formed by the PCVD method, and a planarizing insulating film (second protective film) by a coating method is further formed thereon as the stress relaxation layer 33b. Next, an inorganic insulating film to be the third protective film 33c is formed on the stress relaxation layer 33b by the PCVD method. (Fig. 2 (A))

Examples of the material of the first protective film 33a and the third protective film 33c include silicon oxide, silicon nitride, silicon oxynitride, a thin film mainly containing carbon (DLC film, CN film, amorphous carbon film), or these. May be used.

Further, as a material of the stress relaxation layer 33b, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), or an SOG film obtained by a coating method (for example, siloxane coating) A SiOx film containing an alkyl group using a film or a SiOx film using a polysilazane coating film) may be used.

  Conventionally, when the protective film is thick, there is a problem that cracks are likely to occur due to stress. However, by providing a stress relaxation layer as a laminated structure, the total film thickness of the protective film is increased without causing cracks. be able to.

  In the subsequent steps, the element 20 provided on the fourth substrate 18 is sealed after the first substrate 10 is peeled off and transferred to the third substrate 17 in accordance with the first embodiment. (Fig. 2 (B))

  According to the present embodiment, the element 20 can be sealed using the protective laminated film 33 having a large total film thickness.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1.

(Embodiment 3)
Embodiment 1 is an example in which a protective film is transferred to a film substrate and sealed with the film substrate. Here, only the protective film is peeled off and transferred. Since all steps up to the step of forming the protective film are the same as those in the first embodiment, detailed description is omitted. Also, in FIG. 3, the same parts as those in FIG.

First, in the same manner as in Embodiment Mode 1, a metal layer 11, an oxide layer 12, and a layer to be peeled 13 are sequentially formed on the first substrate 10. (Fig. 3 (A))

  Next, a protective layer made of an adhesive soluble in water or alcohols, here, a water-soluble adhesive 44 is applied and fired over the entire surface.

  Next, a double-sided tape 45 is attached to the water-soluble adhesive material 44. The double-sided tape 45 is preferably attached under reduced pressure so that bubbles do not enter the adhesive surface. At this stage, the double-sided tape 45 is left without removing the protective sheet on one side. The other adhesive surface of the double-sided tape can be exposed by peeling it off in a later step.

  Next, in order to facilitate the subsequent peeling process, a process for partially reducing the adhesion between the metal film 11 and the oxide film 12 is performed.

  Next, the protective sheet is peeled off and the second substrate 46 (fixed substrate) is attached (FIG. 3B). The fixed substrate 46 is also preferably attached under reduced pressure so that bubbles do not enter the bonding surface.

  Next, the first substrate 10 provided with the metal film 11 is peeled off by physical means. (FIG. 3C) The film can be peeled off with a relatively small force (for example, human hand, wind pressure of gas blown from a nozzle, ultrasonic wave, etc.).

  Even if the second fixed substrate is attached to the lower side of the first substrate 10 with the second double-sided tape before the first substrate 10 is peeled off, it is possible to protect the substrate 10 from being broken by the peeling process. Good.

Thus, the layer to be peeled formed on the silicon oxide layer 12 can be separated from the first substrate 10.

  Next, a third substrate 48 prepared in advance on the oxide layer 12 side is bonded with an adhesive 47. Note that the element 49 is already formed on the third substrate 48 (FIG. 3D).

  Next, the double-sided tape 45 and the fixed substrate 46 are separated. (Figure 3 (E))

  Finally, the water-soluble adhesive 44 is dissolved and removed by immersing in water.

  Through the above steps, the yield can be improved and the element 49 can be sealed only with the protective layer. (Fig. 3 (F))

  According to the above process, a device without a substrate for fixing the protective layer can be obtained, which is useful for a device in which total transmittance is important and a device in which weight reduction is important.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

(Embodiment 4)
Further, the present invention can be partially peeled off and transferred. An example is shown in FIG. FIG. 4 shows a process cross-sectional view in which the protective film is transferred to other regions while the terminal electrode is exposed.

  First, as in Embodiment Mode 1, a metal layer 51, an oxide layer 52, and a layer to be peeled 53 including a protective film are sequentially formed on the first substrate 50. (Fig. 4 (A))

  Next, a pretreatment is performed to selectively (partially) reduce the adhesion in order to create a trigger so that the peeling phenomenon is likely to occur. At this time, a trigger for peeling is created by performing scribing or laser light irradiation so as to surround the pattern to be transferred.

  Here, the pretreatment is performed so that the layer to be peeled is transferred only to the region pattern overlapping the sealing material 58 and the first adhesive material formed on the second substrate 55 prepared in advance. A sealing material 58 having a closed pattern is provided so as to surround the semiconductor element 56, and a first adhesive material is provided so as to fill a space surrounded by the sealing material 58.

  Next, the first substrate 50 and the second substrate 55 are bonded together. (FIG. 4B) The second substrate 55 is also provided with a terminal electrode 57 for external connection together with the semiconductor element 56.

  Then, the first substrate 50 provided with the metal film 51 is peeled off by physical means. Then, the layer to be peeled 53 that is not in contact with the first adhesive material 54 or the sealing material 58 remains on the first substrate 50 as it is. Note that the peeling treatment can be peeled off with a relatively small force (for example, a human hand, a wind pressure of a gas blown from a nozzle, an ultrasonic wave, etc.).

In this way, the layer to be peeled can be transferred partially and in a self-aligning manner with the terminal electrode 57 exposed. (Fig. 4 (D))

  Conventionally, when a protective film by a coating method is directly formed on an element, a protective film is also formed on a terminal electrode, so that a process for selective removal is necessary, which increases the number of processes. . In contrast, according to the present invention, the protective film formed by the coating method is transferred to the region excluding the terminal electrode, so that the process can be simplified.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Embodiment Mode 3.

  The present invention having the above-described configuration will be described in more detail with the following examples.

  In this embodiment, an example of a top emission type light-emitting device will be described with reference to FIG.

First, a TFT connected to a light-emitting element is manufactured over a substrate having an insulating surface. Since it is a top emission type, the interlayer insulating film, the gate insulating film, and the base insulating film are not necessarily made of a light-transmitting material. In this embodiment, as the highly stable material film, SiNO films formed by PCVD are used for the first and third interlayer insulating films. In addition, a SiOx film formed by a coating method is used for the second interlayer insulating film as a highly stable material film.

  Further, a fourth interlayer insulating film 211 is provided. The fourth interlayer insulating film 211 is also a SiOx film formed by a coating method.

Next, after selectively etching the fourth interlayer insulating film 211 to form a contact hole reaching the TFT electrode, a reflective metal film (Al-Si film (thickness 30 nm)), work function A large material film (TiN film (film thickness: 10 nm)) and a transparent conductive film (ITSO film (film thickness: 10 nm to 100 nm)) are continuously formed. Next, patterning is performed to form a reflective electrode 212 and a first electrode 213 that are electrically connected to the TFT.

  Next, a partition wall 219 that covers an end portion of the first electrode 213 is formed. As the partition wall 219, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a coating method is used. The obtained SOG film (for example, an SiOx film containing an alkyl group), or a laminate of these can be used.

Next, a layer 214 containing an organic compound is formed by a vapor deposition method or a coating method.

  Next, in order to obtain a top emission light-emitting device, an aluminum film with a thickness of 1 nm to 10 nm or an aluminum film containing a small amount of Li is used as the second electrode 215. Further, if necessary, a transparent conductive film may be laminated.

Next, the transparent protective layer 216 is formed by vapor deposition or sputtering. The transparent protective layer 216 protects the second electrode 215.

  Next, using the technique described in Embodiment 3, the protective film 203b and the oxide layer 203a made of the SOG film formed in advance on the heat-resistant substrate are peeled off and transferred to form a closed pattern-shaped sealing material, transparent The light emitting element is sealed by bonding with a filler 217 made of an adhesive material. The light-emitting device thus sealed can be film-sealed, and the amount of light extracted can be increased as compared with the case where a sealing substrate is used.

  The filler 217 is not particularly limited as long as it is a light-transmitting material. Typically, an ultraviolet curable or thermosetting epoxy resin may be used. Further, by filling the filler 217 between the pair of substrates, the entire transmittance can be improved.

  The top emission type light emitting device is completed through the above steps. In this embodiment, each layer (interlayer insulating film, base insulating film, gate insulating film, and first electrode) includes SiOx to improve reliability.

  Reliability is also improved by sealing with a protective layer 203b made of a dense SOG film.

  Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

In this embodiment, an example of a top emission light-emitting device different from that in Embodiment 1 will be described with reference to FIG.

First, a TFT connected to a light-emitting element is manufactured over a substrate having an insulating surface. Since it is a top emission type, the interlayer insulating film, the gate insulating film, and the base insulating film are not necessarily made of a light-transmitting material. In this embodiment, as the highly stable material film, SiNO films formed by PCVD are used for the first and third interlayer insulating films. In addition, a SiOx film formed by a coating method is used for the second interlayer insulating film as a highly stable material film. A contact hole reaching the active layer of the TFT is formed by selectively etching the interlayer insulating film and the gate insulating film. Then, after forming a conductive film (a film in which TiN, Al—Si, and TiN are sequentially stacked), etching (dry etching with a mixed gas of BCl ₃ and Cl ₂ ) is performed using a mask, and the TFT source electrode And a drain electrode are formed.

Next, a first electrode 223 that is electrically connected to the drain electrode (or source electrode) of the TFT is formed. As the first electrode 223, a material having a high work function, for example, TiN, TiSi _x N _y , Ni, W, WSi _x , WN _x , WSi _x N _y , NbN, Cr, Pt, Zn, Sn, In, or An element selected from Mo, or a film mainly containing an alloy material or compound material containing the element as a main component or a stacked film thereof may be used in a total film thickness range of 100 nm to 800 nm.

  Next, a partition wall 229 that covers a peripheral edge portion of the first electrode 223 is formed. As the partition wall 229, an SOG film (for example, an SiOx film containing an alkyl group) obtained by a coating method is used. The partition wall 229 is formed into a desired shape by dry etching.

Next, a layer 224 containing an organic compound is formed by a vapor deposition method or a coating method.

  Next, in order to obtain a top emission light-emitting device, an aluminum film with a thickness of 1 nm to 10 nm or an aluminum film containing a small amount of Li is used as the second electrode 225. If necessary, a transparent conductive film (for example, an ITSO film) may be stacked.

Next, the transparent protective layer 226 is formed by vapor deposition or sputtering. The transparent protective layer 226 protects the second electrode 225.

  Next, using the technique described in Embodiment 3 above, the protective film 233b and the oxide layer 233a made of the SOG film formed in advance on the heat-resistant substrate are peeled off and transferred, and a sealing material with a closed pattern and a transparent The light emitting element is sealed by bonding with a filler 227 made of an adhesive. The light-emitting device thus sealed can be film-sealed, and the amount of light extracted can be increased as compared with the case where a sealing substrate is used.

  The filler 227 is not particularly limited as long as it is a light-transmitting material. Typically, an ultraviolet curable or thermosetting epoxy resin may be used. Further, by filling the filler 227 between the pair of substrates, the entire transmittance can be improved.

  The top emission type light emitting device is completed through the above steps. In this embodiment, each layer (interlayer insulating film, base insulating film, gate insulating film, and partition wall) contains SiOx to improve reliability.

  Reliability is also improved by sealing with a protective layer 233b made of a dense SOG film.

  Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

In this embodiment, an example of a bottom emission type light-emitting device will be described with reference to FIG.

First, a TFT connected to a light-emitting element is manufactured over a light-transmitting substrate (glass substrate: refractive index around 1.55). Since it is a bottom emission type, a highly light-transmitting material is used for the interlayer insulating film, the gate insulating film, and the base insulating film. Here, SiNO films formed by PCVD are used as the first and third interlayer insulating films. A SiOx film formed by a coating method is used as the second interlayer insulating film.

Next, a first electrode 323 that is electrically connected to the TFT is formed. As the first electrode 323, ITSO (film thickness: 100 nm) which is a transparent conductive film containing SiOx is used. The ITSO film uses a target in which indium tin oxide is mixed with 1 to 10% silicon oxide (SiO ₂ ), the Ar gas flow rate is 120 sccm, the O ₂ gas flow rate is 5 sccm, the pressure is 0.25 Pa, and the power is 3 The film is formed by sputtering at 2 kW. After the ITSO film is formed, heat treatment is performed at 200 ° C. for 1 hour.

  Next, a partition 329 is formed to cover the peripheral edge of the first electrode 323. As the partition wall 329, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a coating method is used. The obtained SOG film (for example, an SiOx film containing an alkyl group), or a laminate of these can be used.

  In this embodiment, the partition 329 is patterned by wet etching so that only the upper end of the partition has a curved surface having a curvature radius. For example, it is preferable to use positive photosensitive acrylic as the partition wall 329 and to have a curved surface having a curvature radius only at the upper end portion of the partition wall. As the partition wall, either a negative type that becomes insoluble in an etchant by irradiation with light for photosensitivity or a positive type that becomes soluble in an etchant by irradiation with light can be used.

Next, a layer 324 containing an organic compound is formed by a vapor deposition method or a coating method. In this embodiment, a green light emitting element is formed. By vapor deposition, CuPc (20nm), laminating a NPD (40nm), Alq ₃ doped with DMQd by a co-evaporation further _{(37.5nm), Alq 3 (37.5nm} ), sequentially laminated CaF ₂ a (1 nm) .

Next, as the second electrode 325, an alloy such as MgAg, MgIn, AlLi, CaF ₂ , or CaN, or a film formed by co-evaporation with an element belonging to Group 1 or 2 of the periodic table and aluminum may be stacked. . In this embodiment, Al is deposited with a film thickness of 200 nm. If necessary, a protective film may be laminated.

  Next, the protective film 333 b and the oxide layer 333 a made of an SOG film formed in advance on the heat resistant substrate are peeled off and transferred to the film substrate 335 using the technique described in Embodiment Mode 3. Then, the film substrate 335 provided with the protective film 333b and the oxide layer 333a and the substrate provided with the light emitting element are attached to each other with a sealing material having a closed pattern and a filler 327 made of a transparent adhesive. The element is sealed.

  The filler 327 is not particularly limited, and typically, an ultraviolet curable or thermosetting epoxy resin may be used.

  The bottom emission type light emitting device is completed through the above steps. In this embodiment, the refractive index and film thickness of each layer (interlayer insulating film, base insulating film, gate insulating film, and first electrode) are determined within an adjustable range, and light reflection at the interface of the layers is suppressed. This improves the light extraction efficiency.

  Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

In this embodiment, an example of a light-emitting device that can extract light from both substrates is shown in FIG.

First, a TFT connected to a light-emitting element is manufactured over a light-transmitting substrate (glass substrate: refractive index around 1.55). Since the light-transmitting property is displayed through light emission, a highly light-transmitting material is used for the interlayer insulating film, the gate insulating film, and the base insulating film. Here, SiNO films formed by PCVD are used as the first and third interlayer insulating films. A SiOx film formed by a coating method is used as the second interlayer insulating film.

  Next, a first electrode 423 that is electrically connected to the TFT is formed. As the first electrode 423, ITSO (film thickness: 100 nm) which is a transparent conductive film containing SiOx is used.

  Next, a partition wall 429 that covers a peripheral edge portion of the first electrode 423 is formed. As the partition wall 429, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a coating method is used. The obtained SOG film (for example, an SiOx film containing an alkyl group), or a laminate of these can be used.

  In this embodiment, the partition 429 is patterned by wet etching so that only the upper end of the partition has a curved surface having a radius of curvature.

Next, a layer 424 containing an organic compound is formed by an evaporation method or a coating method.

  Next, in order to extract light emission also on the protective film side, an aluminum film with a thickness of 1 nm to 10 nm or an aluminum film containing a small amount of Li is used as the second electrode 425. Further, if necessary, a transparent conductive film may be laminated.

Next, the transparent protective layer 426 is formed by vapor deposition or sputtering. The transparent protective layer 426 protects the second electrode 425.

  Next, using the technique described in Embodiment 3 above, the protective film 433b and the oxide layer 433a made of an SOG film formed in advance on the heat-resistant substrate are peeled off and transferred to form a closed pattern sealing material and transparent The light emitting element is sealed by bonding with a filler 427 made of an adhesive. The light-emitting device thus sealed can be film-sealed, and the amount of light extracted can be increased as compared with the case where a sealing substrate is used.

  The filler 427 is not particularly limited as long as it is a light-transmitting material. Typically, an ultraviolet curable or thermosetting epoxy resin may be used. Further, by filling the filler 427 between the pair of substrates, the entire transmittance can be improved.

  Reliability is also improved by sealing with a protective layer 433b made of a dense SOG film.

  In the light-emitting device that emits light on both sides as shown in FIG. 5D, if two polarizing plates are arranged so that the polarization direction of light is perpendicular to the light-emitting panel, the background can be seen when viewed from one side. Can be prevented from being seen through and becoming difficult to recognize the display.

  Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

In this embodiment, an example of an inverted staggered TFT is shown in FIG.

The TFT illustrated in FIG. 6A is an n-channel channel stop type. A gate electrode 719 and a terminal electrode 715 are formed at the same time, and a semiconductor layer 714a made of an amorphous semiconductor film, an n + layer 718, and a metal layer 717 are stacked over the gate insulating film 712, and a channel formation region of the semiconductor layer 714a A channel stopper 714b is formed above the portion. In addition, source or drain electrodes 721 and 722 are formed.

  In the light-emitting element connected to the TFT, the layer 724 containing an organic compound is used as the light-emitting layer.

Since the TFT shown in FIG. 6A is an n-channel type, it is connected to the cathode 723, and an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer are sequentially stacked over the cathode, and then an anode 725. Form.

  Further, using the technique described in Embodiment Mode 4, the protective film 734 and the oxide layer 735 previously formed on the heat-resistant substrate are peeled off and selectively transferred to form a closed pattern sealing material 728 and a transparent material. The light emitting element is sealed by bonding with a filler 727 made of an adhesive. The light-emitting device thus sealed can be film-sealed.

  There is no particular limitation on the filler 727, and typically, an ultraviolet curable or thermosetting epoxy resin may be used.

The TFT illustrated in FIG. 6B is an n-channel channel etch type. A gate electrode 819 and a terminal electrode 815 are formed at the same time, and a semiconductor layer 814 made of an amorphous semiconductor film, an n + layer 818, and a metal layer 817 are stacked over the gate insulating film 812, and a channel formation region of the semiconductor layer 814 The part which becomes becomes thinly etched. In addition, source or drain electrodes 821 and 822 are formed. In the light-emitting element connected to the TFT, the layer 824 containing an organic compound is used as the light-emitting layer.

The TFT illustrated in FIG. 6B is an n-channel TFT; therefore, the TFT is connected to the cathode 823, and an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer are sequentially stacked over the cathode, and then the anode 825. Form.

  Further, using the technique described in Embodiment 1, the film substrate 833 and the substrate 810 that have been peeled and transferred from the protective film 836 and the oxide layer 835 previously formed on the heat-resistant substrate are sealed in a closed pattern. The light emitting element is sealed by bonding with 828 and a filler 827 made of a transparent adhesive. The light-emitting device thus sealed can be film-sealed.

Note that the protective film 836 and the oxide layer 835 are fixed to the film substrate 833 with an adhesive 834.

  There is no particular limitation on the filler 827, and an ultraviolet curable or thermosetting epoxy resin may be typically used.

Further, instead of the amorphous semiconductor film, the semiconductor has an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and has a third state that is stable in terms of free energy. In addition, a semi-amorphous semiconductor film (also referred to as a microcrystalline semiconductor film or a microcrystalline semiconductor film) including a crystalline region having a short-range order and having a lattice strain can be used.

  Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

By implementing the present invention, various modules (active matrix EL module, passive EL module, liquid crystal display device, active matrix EC module) can be completed. That is, by implementing the present invention, all electronic devices incorporating them are completed.

  Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, projectors, car stereos, personal computers, cards, personal digital assistants (mobile computers, mobile phones, electronic books, etc.) Etc.

  Moreover, it can apply as various coating films not only in an electronic device.

  Examples of these are shown in FIGS.

  FIG. 7A shows a mobile phone, which includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, an antenna 2906, an image input portion (CCD, image sensor, etc.) 2907, and the like. According to the present invention in which only the barrier protective film is transferred, the display portion can be thinned, and the total weight of the mobile phone can be reduced.

  FIG. 7B illustrates a card or a card-type portable information terminal, which includes a display portion 3011, a driver circuit portion 3013, a functional circuit portion 3012 such as a CPU, a seal pattern 3014, a battery 3015, and a flexible substrate 3010. In addition, a protective film having a high barrier property can be transferred even in a plastic card not provided with a circuit such as the display unit or the functional circuit.

FIG. 7C illustrates a laptop personal computer, which includes a main body 3201, a housing 3202, a display portion 3203, a keyboard 3204, an external connection port 3205, a pointing mouse 3206, and the like. According to the present invention in which a protective film having a high barrier property is transferred, protection of the display portion can be enhanced.

  FIG. 8 illustrates a television, which includes a housing 2001, a support base 2002, a display portion 2003, a video input terminal 2005, and the like. According to the present invention in which a protective film having a high barrier property is transferred, protection of the display portion can be enhanced. Note that all information display televisions such as a personal computer, a TV broadcast reception, and an advertisement display are included.

  As described above, the semiconductor device or the substrate obtained by implementing the present invention may be used as a part of any electronic device. Note that a semiconductor device manufactured using any structure of Embodiment Modes 1 to 4 and Examples 1 to 5 may be used for the electronic device of this example.

  According to the present invention, it is possible to provide a protective film having excellent barrier properties by easily peeling off a dense thin film that could not be formed by a process unless it is conventionally on a heat resistant substrate.

FIG. 5 is a process cross-sectional view illustrating the first embodiment. FIG. 10 is a process cross-sectional view illustrating the second embodiment. FIG. 10 is a process cross-sectional view illustrating the third embodiment. FIG. 10 is a process cross-sectional view illustrating the fourth embodiment. It is sectional drawing which shows Example 1- Example 4. FIG. 10 is a cross-sectional view showing Example 5. FIG. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

Claims (16)

Forming a protective film on the first substrate;
After laminating the second substrate on the protective film, removing the first substrate,
A method for manufacturing a semiconductor device, wherein the second substrate and the third substrate are bonded so that the protective film covers an element provided over a third substrate. Forming a protective film on the first substrate;
After laminating the second substrate on the protective film, removing the first substrate,
After bonding the third substrate on the protective film so as to face the second substrate across the protective film, the second substrate is removed,
A method for manufacturing a semiconductor device, wherein the third substrate and the fourth substrate are attached so that the protective film covers an element provided over the fourth substrate. Forming a protective film on the first substrate;
After laminating the second substrate on the protective film, removing the first substrate,
The second substrate and the third substrate are arranged so that the protective film covers an element provided on the third substrate and does not cover a terminal portion provided on the third substrate. A method for manufacturing a semiconductor device, characterized by bonding. Forming a protective film on the first substrate;
After laminating the second substrate on the protective film, removing the first substrate,
After bonding the third substrate on the protective film so as to face the second substrate across the protective film, the second substrate is removed,
The third substrate and the fourth substrate are arranged so that the protective film covers an element provided on the fourth substrate and does not cover a terminal portion provided on the fourth substrate. A method for manufacturing a semiconductor device, characterized by bonding. In claim 1 or claim 3,
The method for manufacturing a semiconductor device, wherein the second substrate is a plastic substrate. In claim 2 or claim 4,
The method for manufacturing a semiconductor device, wherein the third substrate is a plastic substrate. In any one of Claims 1 thru | or 6,
The protective film is an SOG film obtained by applying and baking a solution,
The method for manufacturing a semiconductor device, wherein the first substrate is a heat-resistant substrate that can withstand the baking temperature. In any one of Claims 1 thru | or 6,
The protective film is a silica film obtained by applying and baking a solution containing polysilazane,
The method for manufacturing a semiconductor device, wherein the first substrate is a heat-resistant substrate that can withstand the baking temperature. In any one of Claims 1 thru | or 6,
The protective film is a silicon nitride film obtained by applying and baking a solution containing polysilazane,
The method for manufacturing a semiconductor device, wherein the first substrate is a heat-resistant substrate that can withstand the baking temperature. In any one of Claims 1 thru | or 6 ,
The method for manufacturing a semiconductor device, wherein the protective film is a film obtained by applying and baking a solution containing polysilazane or a siloxane polymer, a photocurable organic resin film, or a thermosetting organic resin film. In any one of Claims 1 thru | or 6 ,
The method for manufacturing a semiconductor device, wherein the protective film is an inorganic insulating film formed by a PCVD method, an inorganic insulating film formed by a sputtering method, a thin film mainly containing carbon, or a metal oxide film . In any one of Claims 1 thru | or 6 ,
The method for manufacturing a semiconductor device, wherein the protective film is an inorganic insulating film, an organic resin film, or a laminated film of an inorganic insulating film and an organic resin film. In any one of Claims 1 to 12 ,
A method for manufacturing a semiconductor device, wherein the element is an EL element. In any one of Claims 1 to 12 ,
The element includes a light-emitting element or a semiconductor element. In any one of Claims 1 to 12 ,
A method for manufacturing a semiconductor device, wherein the element is a thin film transistor. In any one of Claims 1 to 12 ,
The method of manufacturing a semiconductor device, wherein the element is an inverted staggered thin film transistor having a semi-amorphous semiconductor as an active layer.

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