JP4899431B2 - 窒化物系蛍光体及びそれを用いた発光装置 - Google Patents
窒化物系蛍光体及びそれを用いた発光装置 Download PDFInfo
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- JP4899431B2 JP4899431B2 JP2005328214A JP2005328214A JP4899431B2 JP 4899431 B2 JP4899431 B2 JP 4899431B2 JP 2005328214 A JP2005328214 A JP 2005328214A JP 2005328214 A JP2005328214 A JP 2005328214A JP 4899431 B2 JP4899431 B2 JP 4899431B2
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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Description
MwAlxSiyBzN((2/3)w+x+(4/3)y+z):Ce
MはMg、Ca、Sr、Baの群から選ばれる少なくとも1つである。
0.2≦w≦1.32、x=1、0.27≦y≦5、0.005≦z≦0.1
これにより黄緑色から黄色に発光可能な窒化物系蛍光体を得ることができる。特に、AlとSiのモル比はAl:Si=1:0.056〜8であることが好まし。また、Mg、Ca、Sr、Baの群から選ばれる少なくとも1つと、Alと、のモル比は(Mg、Ca、Sr、Baの群から選ばれる少なくとも1つ):Al=0.04〜9:1であることが好ましい。
(実施の形態1に係る砲弾型発光装置)
(励起光源)
(実施の形態2に係る発光装置)
(蛍光体11、108)
MはMg、Ca、Sr、Baの群から選ばれる少なくとも1つである。
0.04≦w≦9、x=1、0.056≦y≦18
(実施の形態3に係るキャップタイプ発光装置)
このように構成された発光装置は、発光素子10から放出される光が、蛍光体11を励起し、青緑色から緑色及び黄赤色から赤色に発光する。蛍光体11から放出される光の一部がキャップ16の蛍光体を励起し、緑色から黄色系領域に発光する。これにより、これら蛍光体の混色光により、キャップ16の表面からは、白色系の光が外部へ放出される。
(窒化物系蛍光体の製造方法)
(第2の蛍光体11、108)
(粒径)
(コーティング部材12、109)
(発光素子10、101)
(コーティング部材12、109)
(リードフレーム13)
(導電性ワイヤ)
(モールド部材)
[実施例1〜2]
実施例の窒化物蛍光体の平均粒径は、2μm以上15μm以下の範囲にある。また、実施例中の蛍光体には、酸素が含有される。
[実施例3〜8]
実施例3・・・a=0.006、z=0.000
実施例4・・・a=0.020、z=0.000
実施例5・・・a=0.030、z=0.000
実施例6・・・a=0.006、z=0.005
実施例7・・・a=0.020、z=0.005
実施例8・・・a=0.006、z=0.005
上記の組成比に従い、賦活するCeの量を変化させて得られた窒化物系蛍光体につき、発光特性を測定した結果を、表2に示す。
[実施例9〜15]
実施例9・・・y=1.000、z=0.010
実施例10・・・y=1.000、z=0.050
実施例11・・・y=1.000、z=0.100
実施例12・・・y=0.995、z=0.005
実施例13・・・y=0.990、z=0.010
実施例14・・・y=0.950、z=0.050
実施例15・・・y=0.900、z=0.100
上記の組成比に従い、ホウ素Bの量を変化させて得られた窒化物系蛍光体につき、発光特性を測定した結果を、表3に示す。
[実施例16〜19]
実施例16・・・Ca/Sr=0.5/0.5
実施例17・・・Ca/Sr=0.0/1.0
実施例18・・・Ca/Ba=0.5/0.5
実施例19・・・Ca/Ba=0.0/1.0
上記の組成比に従い、アルカリ土類元素を変化させて得られた窒化物系蛍光体につき、発光特性を測定した結果を、表4に示す。比較のため、表4における実施例9の結果も併記する。
[実施例20〜23]
実施例20・・・b=0.002
実施例21・・・b=0.004
実施例22・・・b=0.006
実施例23・・・b=0.008
上記の組成比に従い、Ce、Euを賦活した窒化物系蛍光体におけるEu量の影響を調べるため各々窒化物系蛍光体を作製して発光特性を測定した結果を、表5に示す。比較のため、表1における実施例2の結果も併記する。
[実施例24〜26]
実施例24・・・c=0.005
実施例25・・・c=0.010
実施例26・・・c=0.030
上記の組成比に従い、Ce、Tbを賦活した窒化物系蛍光体を作製して発光特性を測定した結果を、表6に示す。
[実施例27〜30]
[実施例31〜40]
2…半導体発光素子
3…蛍光体層
4…ワイヤ
10…発光素子
11…蛍光部材
12…コーティング部材
13…リードフレーム
13a…マウントリード
13b…インナーリード
14…導電性ワイヤ
15…モールド部材
16…キャップ
101…発光素子
102…リード電極
104…ワイヤ
103…絶縁封止材
105…パッケージ
106…リッド
107…窓部
108…蛍光体
109…コーティング部材
Claims (6)
- セリウムで賦活された、近紫外線乃至青色光を吸収して580nmより短波長側にピーク波長を持つ黄緑色から黄色に発光する窒化物系蛍光体であって、
以下の一般式で示され、w、x、y、zを以下の範囲とすることを特徴とする窒化物系蛍光体。
MwAlxSiyBzN((2/3)w+x+(4/3)y+z):Ce
MはMg、Ca、Sr、Baの群から選ばれる少なくとも1つである。
0.2≦w≦1.32、x=1、0.27≦y≦5、0.005≦z≦0.1 - 請求項1に記載の窒化物系蛍光体であって、
蛍光体1molに対して、Ceが0.006mol〜0.01molであることを特徴とする窒化物系蛍光体。 - 請求項1又は2に記載の窒化物系蛍光体であって、
さらにCe以外の希土類元素を含むことを特徴とする窒化物系蛍光体。 - 請求項1から3のいずれか一に記載の窒化物系蛍光体であって、
前記窒化物系蛍光体の組成中にOを含有することを特徴とする窒化物系蛍光体。 - 請求項1から4のいずれか一に記載の窒化物系蛍光体であって、
前記窒化物系蛍光体の平均粒径が2μm〜15μmであることを特徴とする窒化物系蛍光体。 - 近紫外線乃至青色光を発する第1の発光スペクトルを有する励起光源と、
前記励起光源の第1の発光スペクトルの少なくとも一部を吸収して、第2の発光スペクトルを発光する1種または2種以上の蛍光体と、
を有する発光装置であって、
前記蛍光体は、請求項1乃至5のいずれか一に記載の窒化物系蛍光体を有することを特徴とする発光装置。
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