JP4417026B2 - Light emitting device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting device having an electroluminescent element in which an electroluminescent layer is sandwiched between a pair of electrodes, and a manufacturing method thereof. In particular, the present invention relates to a sealing structure of a light emitting device.
[0002]
[Prior art]
The electroluminescent element comprises an electroluminescent layer sandwiched between a pair of electrodes (anode and cathode), and the light emission mechanism is such that holes injected from the anode when a voltage is applied between both electrodes, Electrons injected from the cathode recombine in the electroluminescent layer to recombine at the emission center in the electroluminescent layer to form molecular excitons, and release energy when the molecular excitons return to the ground state. And is said to emit light.
[0003]
When an electroluminescent device is used as a luminescent device, reliability such as light emission luminance and uniformity of light emission is required. However, the electroluminescent layer contains an inorganic material in an organic material or a part of the organic material. As a result, there is a problem that it is liable to deteriorate due to moisture, oxygen, etc., and the reliability is lowered.
[0004]
Such deterioration of the electroluminescent layer causes dark spots and shrinkage in the panel portion in the light emitting device including the electroluminescent element, and thus the display characteristics are deteriorated.
[0005]
As a method for preventing the above-described problem, there is known a method of blocking moisture intrusion from outside by storing the electroluminescent element in an airtight container provided with a desiccant and confining it in a sealed space (for example, , See Patent Document 1).
[0006]
In addition, the electroluminescent device formed on the insulator is provided in a sealed space surrounded by the sealing material and the cover material, and a filler such as a resin is provided around the sealed space and the cover material. A method of preventing the entry of moisture and oxygen from the outside is also known (for example, see Patent Document 2).
[0007]
[Patent Document 1]
Japanese Patent Laid-Open No. 9-148066
[0008]
[Patent Document 2]
Japanese Patent Laid-Open No. 13-203076
[0009]
However, even if such a method is used, the practical level of reliability is still insufficient, and a method for preventing further deterioration of the electroluminescent element is desired.
[0010]
[Problems to be solved by the invention]
Therefore, an object of the present invention is to provide a light emitting device having a structure that prevents entry of oxygen, moisture, and the like from the outside into the electroluminescent element, and a manufacturing method thereof.
[0011]
[Means for Solving the Problems]
The present invention forms a structure in which a TFT, a wiring, and an electroluminescent element formed on a substrate are covered with a barrier film having a function of preventing entry of moisture and oxygen from the outside in a light emitting device having an electroluminescent element. It is characterized by doing.
[0012]
In the present invention, a structure in which the sealing structure is completed by attaching the sealing substrate via a sealing agent after the above structure is formed on the substrate is also included.
[0013]
The configuration of the present invention includes a first barrier film formed on a substrate, a TFT formation layer formed on the first barrier film, and a second barrier film formed on the TFT formation layer. A wiring formation layer formed on the second barrier film, a third barrier film formed on the wiring formation layer, and an electroluminescent element formation layer formed on the third barrier film, And a fourth barrier film formed on the electroluminescent element formation layer, wherein the second barrier film is formed in the first opening formed in a part of the TFT formation layer. The light emitting device is in contact with one barrier film.
[0014]
Note that in the above structure, a structure in contact with the first barrier film can be obtained by forming the second barrier film after forming the first opening, so that the TFT formation layer having the TFT can be obtained. It is possible to prevent moisture and oxygen from entering from the outside. Furthermore, since the second barrier film formed in the first opening is formed in the vertical direction with respect to the substrate surface (horizontal direction), it prevents moisture and oxygen from entering from the horizontal direction. Very effective.
[0015]
Further, in the above structure, the third barrier film is a part of the wiring formation layer, and the first barrier film is formed in a second opening formed in a laminated portion with the TFT formation layer. The TFT formation layer is provided in a space covered with the first barrier film and the third barrier film, respectively in contact with the second barrier film.
[0016]
In this case, after the second opening is formed, the third barrier film is formed so that the third barrier film is in contact with not only the first barrier film but also the second barrier film. Therefore, it is possible to prevent moisture and oxygen from entering from the outside into the wiring formation layer in which the wiring for electrically connecting the TFT and the electroluminescent element is formed. Furthermore, since the third barrier film formed in the second opening is formed in the vertical direction with respect to the substrate surface (horizontal direction), it prevents moisture and oxygen from entering from the horizontal direction. Very effective.
[0017]
Further, in each of the above configurations, the fourth barrier film is in contact with the third barrier film, and the electroluminescent element formation layer is covered with the third barrier film and the fourth barrier film. It is characterized by.
[0018]
In this case, since the fourth barrier film is formed in contact with the third barrier film, moisture and oxygen can be prevented from entering the electroluminescent element formation layer from the outside.
[0019]
Another configuration of the present invention includes a first barrier film formed on a substrate, a TFT formation layer formed on the first barrier film, and a second film formed on the TFT formation layer. Barrier film, a wiring formation layer formed on the second barrier film, a third barrier film formed on the wiring formation layer, and an electroluminescence formed on the third barrier film An element forming layer; and a fourth barrier film formed on the electroluminescent element forming layer, wherein the TFT forming layer is covered with the first barrier film and the second barrier film. This is a light-emitting device.
[0020]
Note that in the above structure, the wiring formation layer is covered with the second barrier film and the third barrier film, and the electroluminescence element formation layer includes the third barrier film and the fourth barrier film. It is characterized by being covered with a barrier film.
[0021]
In the present invention, the first barrier film, the second barrier film, the third barrier film, and the fourth barrier film are a silicon nitride film, a silicon nitride oxide film, or a nitrogen-containing carbon, respectively. It is characterized by comprising one or more selected from films. Note that the above-described silicon nitride film, silicon nitride oxide film, and nitrogen-containing carbon film are more preferably formed by a sputtering method.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
The structure of the light-emitting device in the present invention will be described with reference to FIGS.
[0023]
In FIG. 1A, a first barrier film 102 is formed over a substrate 101. Note that as a material for forming the first barrier film 102, one or more selected from a silicon nitride film, a silicon nitride oxide film, or a nitrogen-containing carbon film can be used, and a sputtering method, a CVD method, or the like can be used. May be formed with a film thickness of 50 to 500 nm.
[0024]
On the first barrier film 102, a TFT formation layer 103 is formed in which a plurality of TFTs (thin film transistors) are covered with an interlayer insulating film. Note that the TFT here can be used without particular limitation as long as it has a known structure formed by a known method. A first opening 120 is formed in part of the TFT formation layer 103, and covers the TFT formation layer 103 and the first opening 120 (including the exposed side surfaces of the TFT formation layer 103) to form a second barrier film 104 is formed. Note that as a material for forming the second barrier film 104, one or more kinds selected from a silicon nitride film, a silicon nitride oxide film, and a nitrogen-containing carbon film can be used, and a sputtering method, a CVD method, or the like can be used. May be formed with a film thickness of 50 to 500 nm.
[0025]
Next, a wiring formation layer 105 is formed on the second barrier film 104. Note that in the wiring formation layer 105, a wiring made of a conductive material is formed in part of an insulating film formed of an insulating material. A second opening 121 is formed in part of the wiring formation layer 105, and includes the wiring formation layer 105 and the first opening 120 (including the exposed wiring formation layer 105 and the side surface of the TFT formation layer 103). A third barrier film 106 is formed so as to cover it. Note that as the material for forming the third barrier film 106, one or more selected from a silicon nitride film, a silicon nitride oxide film, or a nitrogen-containing carbon film can be used, and a sputtering method, a CVD method, or the like can be used. May be formed with a film thickness of 50 to 500 nm.
[0026]
Next, an electroluminescent element formation layer 107 including an electroluminescent element is formed on the third barrier film 106. Note that the electroluminescent element has a structure in which an electroluminescent layer is sandwiched between a pair of electrodes.
[0027]
The electroluminescent element formed in the electroluminescent element formation layer 107 is electrically connected to a part of the TFT formed in the TFT formation layer 103 through the wiring formed in the wiring formation layer 105. . Here, one electrode of the electroluminescent element connected to the TFT is referred to as a first electrode, and the other electrode formed on the first electrode with an electroluminescent layer interposed therebetween is referred to as a second electrode. In the present invention, either the first electrode or the second electrode may be an anode or a cathode, and either the first electrode or the second electrode is translucent, or both are translucent. It can also be set as the structure which has property.
[0028]
As the anode material used for forming the anode, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function (work function of 4.0 eV or more). Specific examples of the anode material include ITO (indium tin oxide), IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, gold (Au), platinum. (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (TiN) or the like can be used.
[0029]
On the other hand, as a cathode material used for forming a cathode, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (work function of 3.8 eV or less). Specific examples of the cathode material include elements belonging to Group 1 or Group 2 of the element periodicity, that is, alkali metals such as Li and Cs, and alkaline earth metals such as Mg, Ca, and Sr, and alloys containing them. (Mg: Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ In addition, a transition metal containing a rare earth metal can also be used, but it can also be formed by stacking with a metal (including an alloy) such as Al, Ag, or ITO.
[0030]
Note that the above-described anode material and cathode material can be formed by a vapor deposition method, a sputtering method, or the like, and the film thickness is preferably 10 to 500 nm.
[0031]
In addition, a known material can be used for the electroluminescent layer of the present invention, and either a low molecular material or a high molecular material can be used. Furthermore, not only what consists only of organic compound material but an inorganic compound can also be included in part.
[0032]
The configuration of the electroluminescent device in the present invention is, for example, 1) anode / light emitting layer / cathode, 2) anode / hole transport layer / light emitting layer / cathode, 3) anode / hole transport layer / light emitting layer / electron. Transport layer / cathode, 4) Anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / cathode, 5) Anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron Injection layer / cathode, 6) anode / hole injection layer / hole transport layer / light emitting layer / hole blocking layer (hole blocking layer) / electron transport layer / cathode, 7) anode / hole injection layer / hole transport Layer / light emitting layer / hole blocking layer (hole blocking layer) / electron transport layer / electron injection layer / cathode and the like.
[0033]
The electroluminescent element formation layer 107 described in this embodiment mode is formed small without overlapping with the third barrier film 106. That is, the third barrier film 106 is exposed on the surface even after the electroluminescent element formation layer 107 is formed. This is a structure in which the third barrier film 106 is exposed around the electroluminescent element forming layer 107 when the element forming layer 111 is viewed from the sealing substrate 110 side in FIG.
[0034]
Next, a fourth barrier film 108 is formed. At this time, the fourth barrier film 108 is formed in contact with the third barrier film 106 in the region 123 illustrated in FIG. With such a structure, the electroluminescent element formation layer 107 can have a structure completely covered with the third barrier film 106 and the fourth barrier film 108. Note that as a material for forming the fourth barrier film 108, one or more kinds selected from a silicon nitride film, a silicon nitride oxide film, and a nitrogen-containing carbon film can be used, and a sputtering method, a CVD method, or the like can be used. May be formed with a film thickness of 50 nm to 3 μm.
[0035]
As described above, the first barrier film 102, the TFT formation layer 103, the second barrier film 104, the wiring formation layer 105, the third barrier film 106, the electroluminescent element formation layer 107, and the fourth barrier film 108 are formed on the substrate. The element formation layer 111 containing is formed. With such a structure, moisture and oxygen can be prevented from entering the layers of the element formation layer 111 from the outside.
[0036]
Next, a sealing agent is formed on the element formation layer 111. In this embodiment mode, the first sealant 109 is formed at a position (outside) that does not overlap with the element formation layer 111 over the substrate 101, and the second sealant 109 is covered with the second sealant (inside). A sealant 112 is formed.
[0037]
Note that the first sealant 109 includes a gap material (filler, fine particles, and the like) that holds the gap between the substrates, and uses an ultraviolet curable resin or a thermosetting resin having a higher viscosity than the second sealant 112. Is preferred. Specifically, an epoxy resin can be used. The second sealing agent 112 is made of a transparent ultraviolet curable resin, a thermosetting resin, or the like, and is preferably a dispersion in which an ultraviolet absorber is dispersed. Specifically, an epoxy resin or an acrylate (urethane acrylate) resin can be used.
[0038]
Further, examples of the ultraviolet absorber dispersed in the second sealant include benzotriazole-based, benzophenone-based, and salicylate-based compounds.
[0039]
Examples of benzotriazole compounds include 2- (5-methyl-2-hydroxyphenyl) benzotriazole, 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole. 2- (3,5-di-tert-butyl-2-hydroxyphenyl) benzotriazole, 2- (3-tert-butyl-5-methyl-2-hydroxyphenyl) -5-chlorobenzotriazole, 2- ( 3,5-di-t-butyl-2-hydroxyphenyl) -5-chlorobenzotriazole, 2- (3,5-di-t-acyl-2-hydroxyphenyl) benzotriazole, 2- (2′-hydroxy 5′-t-octylphenyl) benzotriazole and the like can be used.
[0040]
The benzophenone compounds include 2,4-dihydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octylbenzophenone, 4-dodecyloxy- 2-hydroxybenzophenone, 4-benzyloxy-2-hydroxybenzophenone, 2,2 ′, 4,4′-tetrahydroxybenzophenone, 2,2′-dihydroxy-4,4′-dimethoxybenzophenone, and the like can be used.
[0041]
As the salicylate compound, phenyl salicylate, 4-t-butylphenyl salicylate, or the like can be used.
[0042]
In addition, 2,4-di-t-butylphenyl-3 ′, 5′-di-t-butyl-4-hydroxybenzoate, which is a benzoate compound, and 2- [4- [ (2-Hydroxy-3-dodecyloxypropyl) oxy] -2-hydroxyphenyl] -4,6-bis (2,4-dimethylphenyl) 1,3,5-triazine can also be used.
[0043]
In the present invention, the first sealant 109 may or may not be provided. However, in order to obtain a uniform sealing shape, it is preferable to use the first sealant.
[0044]
As described above, the sealing structure illustrated in FIG. 1A can be completed by bonding the substrate 101 and the sealing substrate 110 together with a sealant.
[0045]
In the present invention, the structure shown in FIG. 1B can be used in addition to the structure shown in FIG.
[0046]
In the case of the structure in FIG. 1B, the shapes of the TFT formation layer 203, the wiring formation layer 205, and the electroluminescent element formation layer 207 included in the element formation layer 211 are different from the structure shown in FIG. Yes. Accordingly, the shapes of the first barrier film 202, the second barrier film 204, the third barrier film 206, and the fourth barrier film 208 are also different as shown in FIG. 1B, the substrate 201, the TFT formation layer 203, the wiring formation layer 205, the electroluminescence element formation layer 207, the first barrier film 202, the second barrier film 204, the third barrier film 206, and the fourth The structures of the barrier film 208, the sealant 209, and the sealing substrate 210 and the materials for forming them are the same as those described in FIG.
[0047]
By forming the shape as shown in FIG. 1B, the first barrier film 202 and the second barrier film 204 are formed in contact with each other in the region 223, so that a structure in which the TFT formation layer 203 is completely covered is formed. Can be formed. In addition, since the second barrier film 204 and the third barrier film 206 are formed in contact with each other in the region 221, a structure in which the wiring formation layer 205 is completely covered can be obtained. Further, since the third barrier film 206 and the fourth barrier film 208 are formed in contact with each other in the region 220, the electroluminescent element formation layer 207 can be completely covered. It is possible to prevent moisture and oxygen from entering (especially in the lateral direction).
[0048]
【Example】
Examples of the present invention will be described below.
[0049]
Example 1
In this embodiment, the structure of the end portion of the light-emitting element will be described with reference to FIGS.
[0050]
FIG. 2A illustrates a preferred example of the embodiment having the structure shown in FIG.
[0051]
In FIG. 2A, a first barrier film 302 is formed over a substrate 301. In this embodiment, a silicon nitride film is formed with a thickness of 100 nm by a sputtering method.
[0052]
Next, a TFT 303 is formed on the first barrier film 302. Note that the TFT 303 includes at least an impurity region (a source region and a drain region), a channel formation region, a gate insulating film, and a gate electrode. In addition, a plurality of TFTs are formed in the TFT formation layer 311, but the TFT 303 illustrated in FIG. 2A is a TFT electrically connected to a first electrode of an electroluminescent element to be formed later ( Also referred to as a current control TFT). A first interlayer insulating film 315 is formed so as to cover the TFT 303. Note that the first interlayer insulating film 315 formed here can be formed as a single layer using an insulating material, but can also have a stacked structure using a plurality of insulating materials. Specifically, as the insulating material, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene or In this embodiment, a first layer formed with a silicon nitride film with a thickness of 100 nm and a second layer formed with an acrylic film with a thickness of 1.00 μm can be used. It is formed with a laminated structure. In this way, the TFT formation layer 311 is formed.
[0053]
Next, an opening is formed in part of the TFT formation layer 311. Here, openings are formed in the first interlayer insulating film 315 and part of the gate insulating film.
[0054]
Then, the second barrier film 304 is formed on the TFT formation layer 311 including the opening. In this embodiment, a silicon nitride film is formed with a thickness of 100 nm by a sputtering method. At this time, since the second barrier film 304 is formed in contact with part of the first barrier film 302, the TFT formation layer 311 is covered with the first barrier film 302 and the second barrier film 304. Structure.
[0055]
Next, an opening reaching the impurity region of the TFT 303 is formed in part of the second barrier film 304, the first interlayer insulating film 315, and the gate insulating film, and then the conductive film is formed and patterned. Thus, the wiring 305 is formed. The wiring material can be formed of an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the element as a main component. A film obtained by sequentially stacking a 30 nm tantalum nitride film and a 370 nm thick tungsten film is used. Then, a second interlayer insulating film 316 is formed so as to cover the wiring 305. Note that the second interlayer insulating film 316 formed here can be formed as a single layer using an insulating material, but can also have a stacked structure using a plurality of insulating materials. Specific examples of the insulating material include inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, SOG) or the like can be used, but the second interlayer insulating film 316 in this embodiment is formed with a thickness of 1.00 μm using acrylic. In this way, the wiring formation layer 312 is formed.
[0056]
Next, openings are formed in part of the wiring formation layer 312 and the TFT formation layer 311. Here, openings are formed in part of the second interlayer insulating film 316, the second barrier film 304, the first interlayer insulating film 315, and the gate insulating film.
[0057]
Then, the third barrier film 306 is formed on the wiring formation layer 312 including the opening. In this embodiment, a silicon nitride film is formed with a thickness of 100 nm by a sputtering method. At this time, since the third barrier film 306 is formed in contact with part of the second barrier film 304, the wiring formation layer 312 is covered with the second barrier film 304 and the third barrier film 306. Structure.
[0058]
Next, an opening reaching the wiring 305 is formed in part of the third barrier film 306 and the second interlayer insulating film 316, and then the conductive film is formed and patterned to form the first electrode. 307 is formed. Note that in this embodiment, the first electrode 307 is formed using a transparent conductive film. Specifically, ITO is used and formed with a film thickness of 110 nm by a sputtering method.
[0059]
Then, an insulating layer (referred to as a bank, a partition, a barrier, a bank, or the like) 317 is formed so as to cover an end portion of the first electrode 307. Note that the insulating layer 317 formed here can be formed as a single layer using an insulating material; however, the insulating layer 317 can have a stacked structure using a plurality of insulating materials. As the insulating material, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, SOG) or the like is used. In this embodiment, acrylic, which is a photosensitive organic resin, is used to form a film with a thickness of 1.45 μm.
[0060]
Here, the insulating layer 317 is formed small without completely overlapping with the third barrier film 306. That is, the third barrier film 306 is exposed on the surface even after the electroluminescent element formation layer 313 is formed.
[0061]
Next, the electroluminescent layer 308 is formed over the first electrode 307. The electroluminescent layer 308 can have a single-layer structure including only a light-emitting layer, but can also have a stacked structure using a plurality of materials. In this example, the hole injection layer made of Cu—Pc, the hole transport layer made of α-NPD, and the light emitting layer Alq _Three An electroluminescent layer 308 obtained by stacking layers is used.
[0062]
Next, a second electrode 309 is formed over the electroluminescent layer 308. Note that here, the second electrode 309 is formed by patterning the conductive film using a metal mask. In this embodiment, since the second electrode 309 is a cathode, the material of the second electrode 309 is Mg: Ag, Mg: In, Al: Li, CaF. ₂ , An alloy such as CaN, or a conductive film in which an element belonging to Group 1 or Group 2 of the periodic table and aluminum are formed by a co-evaporation method can be used. In this embodiment, an aluminum film having a thickness of 1 nm to 10 nm or an aluminum film containing a small amount of Li is used so that light can be transmitted from the second electrode 309 side. Before forming an aluminum film of 1 nm to 10 nm, CaF is used as a cathode buffer layer. ₂ , MgF ₂ Or BaF ₂ You may form the layer (film thickness 1nm-5nm) which has the translucency which consists of. In this way, the electroluminescent element formation layer 313 is formed.
[0063]
Then, the fourth barrier film 310 is formed on the electroluminescent element formation layer 313. In this embodiment, a silicon nitride film is formed with a thickness of 100 nm by a sputtering method.
[0064]
At this time, since the fourth barrier film 310 is formed in contact with part of the third barrier film 306, the electroluminescent element formation layer 313 is formed of the third barrier film 306 and the fourth barrier film 310. It can be a covered structure.
[0065]
With the above structure, moisture and oxygen penetrate from the outside (especially in the lateral direction) into each of the TFT formation layer 311, the wiring formation layer 312, and the electroluminescent element formation layer 313 formed on the substrate. A sealing structure that prevents this can be formed.
[0066]
FIG. 2B shows a preferable example in the case of having the structure shown in FIG. 1B in the embodiment mode.
[0067]
The structure shown in FIG. 2B is the same as that shown in FIG. 2A except that the TFT formed on the substrate and the structure of the electroluminescent element electrically connected to the TFT are the same as those shown in FIG. Since the structures of the layer 325, the wiring formation layer 326, and the electroluminescent element formation layer 327 are different, the shapes of the second barrier film 323, the third barrier film 324, and the fourth barrier film 325 are different.
[0068]
Specifically, the wiring formation layer 327 is formed smaller than the TFT formation layer 326 formed on the substrate, and the second formation formed on the TFT formation layer 326 is formed around the wiring formation layer 327. The barrier film 323 is exposed. In addition, the electroluminescent element forming layer 328 is formed smaller than the wiring forming layer 327, and the third barrier film 324 formed on the wiring forming layer 327 is exposed around the electroluminescent element forming layer 328. is doing.
[0069]
Note that with the shape shown in FIG. 2B, the first barrier film 322 and the second barrier film 323 are formed in contact with each other around the TFT formation layer 326, and thus the TFT formation layer 326 is formed. Can be formed. In addition, since the second barrier film 323 and the third barrier film 324 are formed in contact with each other around the wiring formation layer 327, a structure in which the wiring formation layer 327 is completely covered can be obtained. Further, since the third barrier film 324 and the fourth barrier film 325 are formed in contact with each other around the electroluminescent element formation layer 328, the electroluminescent element formation layer 328 may be completely covered. It is possible to prevent moisture and oxygen from entering the layers from the outside (particularly in the lateral direction).
[0070]
(Example 2)
In this embodiment, a structure of a light-emitting device in which a pixel portion and TFTs (n-channel TFT and p-channel TFT) of a driver circuit formed around the pixel portion are formed over the same substrate is shown in FIGS. 6 will be described.
[0071]
First, the first barrier film 601 is formed on the substrate 600.
[0072]
As the substrate 600, a glass substrate, a quartz substrate, a ceramic substrate, or the like can be used. As the first barrier film 601, a single-layer film of silicon oxide, silicon nitride, silicon oxynitride, or a stacked film in which these are combined can be used. In addition, the first barrier film 601 may be a film formed by a sputtering method or a film formed by a CVD method.
[0073]
In this embodiment, a silicon nitride film with a thickness of 100 nm formed by a sputtering method is used. Silicon is used as the target and N is used as the sputtering gas. ₂ And Ar, and the flow ratio of each gas is 20/20 (sccm). Further, a circular target having a pressure of 0.4 Pa, a film forming power of 800 W, and a radius of 6 inches is used. Note that the film formation temperature can be about room temperature to about 200 ° C., but in this embodiment,. Film formation is performed at 200 ° C.
[0074]
Next, a plurality of TFTs are formed over the first barrier film 601. Note that the TFT formed here is simultaneously formed not only in the pixel portion but also in the driver circuit portion.
[0075]
The TFT and its manufacturing method in the present invention are not particularly limited, and can be formed using a known method.
[0076]
A structure of a TFT that can be used in the present invention is as shown in FIG. First, a semiconductor film having an amorphous structure (here, an amorphous silicon film) is formed, and this semiconductor film is crystallized using a known crystallization technique such as a solid phase growth method or a laser crystallization method, By patterning the semiconductor film having a crystal structure, semiconductor layers separated into island shapes are formed.
[0077]
Next, a gate insulating film 607 covering the semiconductor layer is formed with an insulating film containing silicon with a thickness of 40 to 150 nm by a plasma CVD method.
[0078]
Next, a first conductive film with a thickness of 20 to 100 nm and a second conductive film with a thickness of 100 to 400 nm are stacked over the gate insulating film 607. The conductive material for forming the first conductive film and the second conductive film is an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the element as a main component. In this embodiment, a tantalum nitride film with a thickness of 30 nm is sequentially stacked as the first conductive film, and a tungsten film with a thickness of 370 nm is sequentially stacked as the second conductive film.
[0079]
Next, the gate electrode (621 to 624) of the TFT is formed by sequentially etching the first conductive film and the second conductive film. These gate electrodes (621 to 624) each have a stacked structure of a first conductive layer (621a to 624a) and a second conductive layer (621b to 624b).
[0080]
Next, an impurity region is formed by adding an impurity to the previously formed semiconductor layer. As impurity elements imparting p-type to a semiconductor, periodic group 13 elements such as boron (B), aluminum (Al), and gallium (Ga) are known. Note that as an impurity element imparting n-type conductivity to a semiconductor, an element belonging to Group 15 of the periodic table, typically phosphorus (P) or arsenic (As) is known.
[0081]
The first impurity region 630 has 1 × 10 ¹⁶ ~ 1x10 ¹⁷ /cm ^Three An impurity element imparting n-type is added in a concentration range of. Here, a region having the same concentration range as the first impurity region 630 is represented by n. ^- Also called a region.
[0082]
The second impurity regions 634 and 635 have 1 × 10 6 ²⁰ ~ 1x10 ^{twenty one} /cm ^Three An impurity element imparting n-type is added in a concentration range of. Here, a region having the same concentration range as the second impurity region is n ⁺ Also called a region.
[0083]
The third impurity region 637 includes 1 × 10 ¹⁸ ~ 1x10 ¹⁹ /cm ^Three An impurity element imparting n-type is added in a concentration range of. Here, a region having the same concentration range as the third impurity region 637 is represented by n. ^- Also called a region.
[0084]
The fourth impurity regions 641 and 642 have 1 × 10 6 ²⁰ ~ 1x10 ^{twenty one} /cm ^Three An impurity element imparting p-type is added in a concentration range of. Here, a region having the same concentration range as the fourth impurity regions 641 and 642 is defined as p. ⁺ Also called a region.
[0085]
The fifth impurity regions 643 and 644 have 1 × 10 ¹⁸ ~ 1x10 ²⁰ /cm ^Three An impurity element imparting p-type is added in a concentration range of. Here, a region having the same concentration range as the fifth impurity region is represented by p. ^- Also called a region.
[0086]
Note that part of the semiconductor layer (501 to 504) which is not an impurity region is referred to as a channel formation region.
[0087]
After forming the TFT as described above, an insulating film covering the TFT is formed. In this embodiment, an insulating film made of an inorganic material is formed, and this is called a first interlayer insulating film 645. Specifically, a silicon nitride film with a thickness of 100 nm is formed by a plasma CVD method. Of course, this insulating film is not limited to a silicon nitride film, and other insulating films containing silicon may be used as a single layer or a laminated structure.
[0088]
Next, a second interlayer insulating film 646 made of an organic insulating material is formed over the first interlayer insulating film 645. In this embodiment, an acrylic film is formed to a thickness of 1.0 to 2.0 μm by a coating method.
[0089]
Thus, the surface can be satisfactorily planarized by forming the second interlayer insulating film 646 with an organic material. In addition, since the organic material 646 generally has a low dielectric constant, parasitic capacitance can be reduced. However, since it is hygroscopic and not suitable as a protective film, it is preferably used in combination with a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like formed as the first interlayer insulating film 645 as in this embodiment. .
[0090]
Next, as shown in FIG. 4A, the second interlayer insulating film 646, the first interlayer insulating film 645, and a part of the gate insulating film 607 are etched to form the opening (1) 647. To do.
[0091]
First, the second interlayer insulating film 646 is etched. In this case, CF _Four And O ₂ Etching of the second interlayer insulating film 646 is performed using He and He as source gases.
[0092]
Next, the first interlayer insulating film 645 is etched. In this case, CF in the first condition _Four And O ₂ And He are used as source gases, and CHF is used under the second condition. _Three The first interlayer insulating film 645 is etched by performing etching using a source gas.
[0093]
Further, the gate insulating film 607 is etched. In this case, CHF _Three Are used for the source gas, whereby the gate insulating film 607 is etched. As described above, the opening (1) 647 is formed.
[0094]
In the present invention, when the opening (1) 647 is formed, not only the above-described etching method but also an inkjet method is used to apply an etching solution to a desired position, thereby opening the opening at a desired position. A method of forming the part (1) 647 can also be used.
[0095]
As another method, the opening (1) 647 is not formed by etching, but each of the gate insulating film 607, the first interlayer insulating film 645, and the second interlayer insulating film 646 formed in advance is formed. Insulating materials (for example, inorganic materials (solutions in which silicon oxide, silicon nitride, silicon oxynitride, etc. are dispersed) in solvents, photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist, It is also possible to omit the patterning step using the etching method as described above by forming it at a desired position using an inkjet method using benzocyclobutene or SOG)) as a coating solution.
[0096]
Next, as shown in FIG. 4B, a second barrier film 648 is formed. As the second barrier film 648, a single-layer film of silicon oxide, silicon nitride, silicon oxynitride, or a stacked film in which these are combined can be used. In addition, the second barrier film 648 may be a film formed by a sputtering method or a film formed by a CVD method. In this embodiment, a silicon nitride film with a thickness of 100 nm formed by a sputtering method is used.
[0097]
Note that in the case where the gate insulating film 607, the first interlayer insulating film 645, and the second interlayer insulating film 646 are each formed at a desired position using an inkjet method, and a patterning step using an etching method is omitted, A structure obtained by forming the second barrier film 648 is illustrated in FIG.
[0098]
Next, contact holes reaching the source region or the drain region of each TFT are formed. Note that a dry etching method is used for forming the contact hole, and the second barrier film 648, the second interlayer insulating film 646, the first interlayer insulating film 645, and the gate insulating film 607 are etched under the following conditions. To form.
[0099]
First, the second barrier film 648 is etched. In this case, CF _Four And O ₂ Etching of the second barrier film 648 is performed using He and He as source gases.
[0100]
Next, the second interlayer insulating film 646, the first interlayer insulating film 645, and the gate insulating film 607 are sequentially etched. Etching conditions in this case are omitted because the same conditions as those for etching the second interlayer insulating film 646, the first interlayer insulating film 645, and the gate insulating film 607 may be used.
[0101]
Thereafter, wiring is formed using Al, Ti, Mo, W, or the like. As materials for these electrodes and pixel electrodes, it is desirable to use a material having excellent reflectivity such as a film mainly composed of Al or Ag, or a laminated film thereof. In this manner, wirings 651 to 658 are formed (FIG. 4C).
[0102]
Next, a third interlayer insulating film 660 made of an organic insulating material is formed. In this embodiment, an acrylic film is formed to a thickness of 1.0 to 5.0 μm by a coating method.
[0103]
Next, as illustrated in FIG. 5A, one of the third interlayer insulating film 660, the second barrier film 648, the second interlayer insulating film 646, the first interlayer insulating film 645, and the gate insulating film 607 The opening (2) 661 is formed by etching the part.
[0104]
First, the third interlayer insulating film 660 is etched. In this case, CF _Four And O ₂ Etching of the third interlayer insulating film 660 is performed by etching using He and He as source gases.
[0105]
Next, the second barrier film 648, the second interlayer insulating film 646, the first interlayer insulating film 645, and the gate insulating film 607 are sequentially etched. The etching conditions in this case are the same as the etching conditions for the second barrier film 648, the second interlayer insulating film 646, the first interlayer insulating film 645, and the gate insulating film 607. I will omit it.
[0106]
In the present invention, when the opening (2) 661 is formed, not only the above-described etching method but also an inkjet method is used to apply an etching solution to a desired position, thereby opening the opening at a desired position. A method of forming the portion (2) 661 can also be used.
[0107]
As another method, the opening (2) 661 is not formed by etching, but the gate insulating film 607, the first interlayer insulating film 645, the second interlayer insulating film 646, and the third layer which are formed first. Each of the interlayer insulating films 660 is formed of an insulating material (for example, an inorganic material (a solution in which silicon oxide, silicon nitride, silicon oxynitride, or the like is dispersed), or a photosensitive or non-photosensitive organic material (polyimide, acrylic, The patterning process using the etching method as described above may be omitted by forming at a desired position using an inkjet method using polyamide, polyimide amide, resist, benzocyclobutene or SOG)) as a coating liquid. Is possible.
[0108]
Next, as shown in FIG. 5B, a third barrier film 662 is formed. As the third barrier film 662, a single-layer film of silicon oxide, silicon nitride, silicon oxynitride, or a stacked film in which these are combined can be used. The third barrier film 662 may be a film formed by a sputtering method or a film formed by a CVD method. In this embodiment, a silicon nitride film with a thickness of 100 nm formed by a sputtering method is used.
[0109]
Note that the gate insulating film 607, the first interlayer insulating film 645, the second interlayer insulating film 646, and the third interlayer insulating film 660 are formed in desired positions by an inkjet method, and an etching method is used. FIG. 7B shows a structure obtained by forming the third barrier film 662 when the patterning step is omitted.
[0110]
Next, an opening (3) 663 reaching the wiring included in some TFTs is formed. Note that the opening (3) 663 is formed by using a dry etching method and etching the third barrier film 662 and the third interlayer insulating film 660 under the following conditions.
[0111]
First, the third barrier film 662 is etched. In this case, CF _Four And O ₂ Etching of the third barrier film 662 is performed by etching using He and He as source gases.
[0112]
Next, the third interlayer insulating film 660 is sequentially etched. Etching conditions in this case are omitted because the same conditions as those for etching the third interlayer insulating film 660 may be used.
[0113]
Next, a light-transmitting transparent conductive film is formed over the third barrier film 662. As a material for forming the transparent conductive film, an indium tin oxide (ITO) film or a transparent conductive film in which indium oxide is mixed with 2 to 20% zinc oxide (ZnO) can be used. ITO is formed with a film thickness of 110 nm by sputtering.
[0114]
Then, after a resist mask is formed on the ITO transparent conductive film, this is etched by a wet etching method using an acid-based etchant to form the first electrode 664 (FIG. 5C). .
[0115]
Next, an insulating layer 665 made of an organic material is formed. Specifically, after forming a film with a thickness of 1.45 μm by a spin coating method using photosensitive acrylic, and after patterning by a photolithography method, a position overlapping with the first electrode (anode) 664, Further, an etching process is performed so as to form openings (4) (610, 611) in the third barrier film 662, which is an end portion on the substrate, and an insulating layer 665 is formed (FIG. 6A).
[0116]
The etching conditions in this case are CF _Four And O ₂ Etching is performed using Ni and He as source gases.
[0117]
In the present invention, when the opening (4) (670, 671) is formed, not only the etching method described above but also an inkjet method is used to apply an etching solution to a desired position. The method of forming the opening (4) (670, 671) at the position can also be used.
[0118]
As another method, the openings (4) (670, 671) are not formed by etching, but each of the insulating layers 665 formed earlier is formed of an insulating material (for example, an inorganic material (eg, silicon oxide, silicon nitride, oxide). A solution in which silicon nitride or the like is dispersed in a solvent) or a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, SOG, or the like)) as an application liquid. By forming an ink jet method at a desired position, the patterning step using the etching method as described above can be omitted.
[0119]
Next, an electroluminescent layer 666 is formed over the first electrode (anode) 664 exposed in the opening of the insulating layer 665 (FIG. 6B). Note that the electroluminescent layer 666 includes at least a light emitting layer, and any one or more of layers having different functions with respect to carriers, such as a hole injection layer, a hole transport layer, a blocking layer, an electron transport layer, and an electron injection layer. Are formed by laminating and combining.
[0120]
As a material for forming the electroluminescent layer 666, a known organic compound of low molecular weight or high molecular weight can be used.
[0121]
Note that as a material for forming the electroluminescent layer 666, specifically, the following materials can be used.
[0122]
As the hole injection material for forming the hole injection layer, porphyrin compounds are effective as long as they are organic compounds, and phthalocyanine (hereinafter referred to as H). ₂ -Pc) and copper phthalocyanine (hereinafter referred to as Cu-Pc). There are also materials obtained by chemically doping conductive polymer compounds, such as polyethylenedioxythiophene (hereinafter referred to as PEDOT) doped with polystyrene sulfonic acid (hereinafter referred to as PSS), polyaniline, polyvinylcarbazole (hereinafter referred to as PVK). For example).
[0123]
As the hole transport material forming the hole transport layer, an aromatic amine-based compound (that is, a compound having a benzene ring-nitrogen bond) is suitable. As a widely used material, for example, 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as “α”), which is a derivative thereof, in addition to the above-described TPD. -NPD "), 4,4 ', 4" -tris (N, N-diphenyl-amino) -triphenylamine (hereinafter referred to as "TDATA"), 4,4', 4 "- And starburst aromatic amine compounds such as tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (hereinafter referred to as “MTDATA”).
[0124]
As a light emitting material for forming the light emitting layer, specifically, tris (8-quinolinolato) aluminum (hereinafter referred to as Alq). _Three And tris (4-methyl-8-quinolinolato) aluminum (hereinafter referred to as Almq). _Three ), Bis (10-hydroxybenzo [h] -quinolinato) beryllium (hereinafter referred to as BeBq). ₂ ), Bis (2-methyl-8-quinolinolato)-(4-hydroxy-biphenylyl) -aluminum (hereinafter referred to as BAlq), bis [2- (2-hydroxyphenyl) -benzoxazolate] zinc ( Hereinafter, Zn (BOX) ₂ ), Bis [2- (2-hydroxyphenyl) -benzothiazolate] zinc (hereinafter referred to as Zn (BTZ)) ₂ Various fluorescent dyes are effective in addition to metal complexes such as A triplet light emitting material is also possible, and is mainly a complex having platinum or iridium as a central metal. As a triplet light emitting material, tris (2-phenylpyridine) iridium (hereinafter, Ir (ppy)) _Three 2, 3, 7, 8, 12, 13, 17, 18-octaethyl-21H, 23H-porphyrin-platinum (hereinafter referred to as PtOEP) and the like are known.
[0125]
As an electron transport material for forming an electron transport layer, a metal complex is often used, and Alq described above is used. _Three , Almq _Three , BeBq ₂ A metal complex having a quinoline skeleton or a benzoquinoline skeleton such as BAlq that is a mixed ligand complex is suitable. Zn (BOX) ₂ Zn (BTZ) ₂ There are also metal complexes having an oxazole-based or thiazole-based ligand. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (hereinafter referred to as PBD), 1,3-bis [ Oxadiazole derivatives such as 5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (hereinafter referred to as OXD-7), 3- (4-tert-butyl) Phenyl) -4-phenyl-5- (4-biphenylyl) -1,2,4-triazole (hereinafter referred to as TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl)- Triazole derivatives such as 5- (4-biphenylyl) -1,2,4-triazole (hereinafter referred to as p-EtTAZ), bathophenanthroline (hereinafter referred to as BPhen), bathocuproin (hereinafter referred to as BCP), etc. Enantororin derivative has an electron transporting property.
[0126]
In addition, when a blocking layer is included, the above-described BAlq, OXD-7, TAZ, p-EtTAZ, BPhen, BCP, etc. are effective as the hole blocking material for forming the blocking layer because the excitation energy level is high. It is.
[0127]
The electroluminescent layer 666 can be formed by using a combination of the above materials and forming over the first electrode (anode).
[0128]
Next, as shown in FIG. 6B, a second electrode (cathode) 667 is formed so as to cover the electroluminescent layer 666. In this embodiment, calcium fluoride (CaF) formed in contact with the electroluminescent layer 666 is used. ₂ ) Or barium fluoride (BaF) ₂ The second electrode (cathode) 667 is formed by laminating a cathode buffer layer (not shown) made of) and a conductive film made of aluminum. Specifically, a second electrode (cathode) 667 is formed by forming a film made of calcium fluoride as a cathode buffer layer with a thickness of 1 nm and forming aluminum with a thickness of 100 nm.
[0129]
Note that as the cathode material for forming the second electrode 667, any other known material can be used as long as it is a conductive film having a low work function.
[0130]
Further, a fourth barrier film 669 is formed over the second electrode 667. As the fourth barrier film 669, a single-layer film of silicon oxide, silicon nitride, silicon oxynitride, or a stacked film in which these are combined can be used. The fourth barrier film 669 may be a film formed by a sputtering method or a film formed by a CVD method. In this embodiment, a silicon nitride film with a thickness of 100 nm formed by a sputtering method is used.
[0131]
Note that the structure obtained by forming the fourth barrier film 669 in the case where the insulating layer 665 is formed at a desired position by an inkjet method and the patterning step using an etching method is omitted is shown in FIG. Shown in
[0132]
As described above, the pixel circuit 706 including the driving circuit 705 including the n-channel TFT 701 and the p-channel TFT 702, the switching TFT 703 including the n-channel TFT, and the current control TFT 704 including the p-channel TFT is the same. A structure which is provided over the substrate and prevents moisture and oxygen from entering from the outside (particularly in the lateral direction) can be formed (FIG. 6B).
[0133]
(Example 3)
This example has the structure shown in the embodiment mode (FIG. 1A), Example 1 (FIG. 2A), and Example 2, and a sealing structure is obtained by attaching a sealing substrate. The completed light emitting device will be described with reference to FIG. 8A is a top view illustrating the light-emitting device, and FIG. 8B is a cross-sectional view taken along line AA ′ in FIG. 8A. Reference numeral 801 indicated by a dotted line denotes a drive circuit portion (source side drive circuit), 802 denotes a pixel portion, and 803 denotes a drive circuit portion (gate side drive circuit). Reference numeral 804 denotes a sealing substrate, reference numeral 805 denotes a first sealing agent, and a second sealing agent 807 is provided on the inner side surrounded by the first sealing agent 805.
[0134]
Reference numeral 808 denotes a wiring for transmitting signals input to the source side driver circuit 801 and the gate side driver circuit 803, and a video signal, a clock signal, and a start signal from an FPC (flexible printed circuit) 809 serving as an external input terminal. Receive a reset signal, etc. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
[0135]
Next, a cross-sectional structure is described with reference to FIG. A first barrier film 831 is formed over the substrate 810, and a driver circuit portion and a pixel portion are formed thereover. Here, a source side driver circuit 801 which is a driver circuit portion and a pixel portion 802 are shown.
[0136]
Note that the source side driver circuit 801 is a CMOS circuit in which an n-channel TFT 823 and a p-channel TFT 824 are combined. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this is not always necessary, and it can be formed outside the substrate.
[0137]
A second barrier film 832 is formed on the interlayer insulating film formed so as to cover these TFTs. Note that the second barrier film 832 can be formed using a material similar to that of the second barrier film described in Embodiments 1 and 2 by a similar method.
[0138]
Further, a third barrier film 833 is formed on another interlayer insulating film formed on the second barrier film 832 so as to cover a wiring electrically connected to the source region or the drain region of the TFT. ing. Note that the third barrier film 833 can be formed using a material similar to that of the third barrier film described in Embodiments 1 and 2 by a similar method.
[0139]
The pixel portion 802 is formed by a plurality of pixels including a switching TFT 811, a current control TFT 812, and a first electrode 813 electrically connected to the drain thereof. Note that an insulator 814 is formed so as to cover an end portion of the first electrode 813 formed over the third barrier film 833.
[0140]
An electroluminescent layer 816 and a second electrode 817 are formed over the first electrode 813, respectively. In this embodiment, since the first electrode 813 functions as an anode and the second electrode functions as a cathode, the materials used for the first electrode 813 and the second electrode 817 as well as the electroluminescent layer 816 are: It can be formed using a material similar to that used in Example 1 or Example 2.
[0141]
Further, the sealing substrate 804 and the element substrate 810 are bonded to each other with the first sealant 805 and the second sealant 807, whereby a sealing structure in which the electroluminescent element 818 is provided can be completed.
[0142]
Note that the first sealant 805 includes an epoxy resin having a filler (diameter: 6 μm to 24 μm) and a viscosity of 370 Pa · s. Further, the second sealant 807 is a light-transmitting material after curing, and a thermosetting resin may be used. Here, specific gravity 1.17 (25 ° C.), viscosity 9000 mPa · s, tensile shear bond strength 15 N / mm ² A high heat-resistant thermosetting epoxy resin having a Tg point of 74 ° C. is used.
[0143]
In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like can be used as a material used for the sealing substrate 804.
[0144]
As described above, a light-emitting device having the sealing structure of the present invention can be obtained.
[0145]
Example 4
In this example, unlike Example 3, the structure shown in the embodiment mode (FIG. 1B) and Example 1 (FIG. 2B) is used, and a sealing substrate is attached. A light-emitting device having a completed sealing structure will be described with reference to FIG.
[0146]
The structure shown in FIG. 9 is the same as that shown in FIG. 8 in the structure of the TFT formed on the substrate and the electroluminescent element electrically connected to the TFT, but a plurality of TFTs (911, 912, 923, 924), the wiring forming layer including the wiring 921, and the electroluminescent element forming layer including the electroluminescent element 918 are different in structure, the second barrier film 932, the third barrier film 933, The shape of the fourth barrier film 934 is different. In addition, when it is the same name as having demonstrated in FIG. 8, since it is the same also in FIG. 9, it abbreviate | omits description.
[0147]
In addition, since the first barrier film 931 and the second barrier film 932 are partly in contact with each other by forming the shape as shown in FIG. 9, a structure that completely covers the TFT formation layer is formed. can do. Further, since the second barrier film 932 and the third barrier film 933 are formed so as to be in contact with each other, the wiring formation layer can be completely covered. Further, since the third barrier film 933 and the fourth barrier film 934 are formed so as to be partially in contact with each other, the electroluminescent element formation layer can be completely covered, and these layers can be externally connected. It is possible to prevent moisture and oxygen from entering (especially in the lateral direction).
[0148]
(Example 5)
In this example, various electric appliances completed using a light-emitting device having the electroluminescent element of the present invention will be described.
[0149]
As an electric appliance manufactured using the light emitting device of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, an acoustic reproduction device (car audio, audio component, etc.), a notebook type personal computer, Reproducing a recording medium such as a game machine, a portable information terminal (mobile computer, cellular phone, portable game machine or electronic book), an image reproducing device (specifically, a digital video disc (DVD)), A device provided with a display device capable of displaying the image). Specific examples of these electric appliances are shown in FIG.
[0150]
FIG. 10A illustrates a display device, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. It is manufactured by using the light emitting device of the present invention for the display portion 2003. The display device includes all information display devices such as a personal computer, a TV broadcast reception, and an advertisement display.
[0151]
FIG. 10B illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. It is manufactured by using the light emitting device of the present invention for the display portion 2203.
[0152]
FIG. 10C illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. It is manufactured by using the light emitting device of the present invention for the display portion 2302.
[0153]
FIG. 10D illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. The display portion A 2403 mainly displays image information, and the display portion B 2404 mainly displays character information. The light-emitting device of the present invention is used for the display portions A, B 2403, and 2404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.
[0154]
FIG. 10E illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. It is manufactured by using the light emitting device of the present invention for the display portion 2502.
[0155]
FIG. 10F illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and an eyepiece. Part 2610 and the like. It is manufactured by using the light emitting device of the present invention for the display portion 2602.
[0156]
Here, FIG. 10G illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. It is manufactured by using the light emitting device of the present invention for the display portion 2703.
[0157]
【The invention's effect】
Since the light-emitting device of the present invention has a structure that prevents moisture and oxygen from entering from the outside (particularly in the lateral direction), element deterioration is unlikely to occur, so that the lifetime of the light-emitting device can be increased. it can.
[Brief description of the drawings]
FIG. 1 illustrates a cross-sectional structure of a light-emitting device of the present invention.
FIG. 2 illustrates a cross-sectional structure of a light-emitting device of the present invention.
3A and 3B illustrate a manufacturing process of a light-emitting device of the present invention.
4A and 4B illustrate a manufacturing process of a light-emitting device of the present invention.
FIGS. 5A and 5B illustrate a manufacturing process of a light-emitting device of the present invention. FIGS.
6A and 6B illustrate a manufacturing process of a light-emitting device of the present invention.
7A and 7B illustrate a manufacturing process of a light-emitting device of the present invention.
FIG. 8 illustrates a sealing structure of a light-emitting device of the present invention.
FIG 9 illustrates a sealing structure of a light-emitting device of the present invention.
FIG. 10 is a diagram illustrating an electric appliance.
[Explanation of symbols]
101, 201 substrate
102, 202 First barrier film
103, 203 TFT formation layer
104, 204 Second barrier film
105, 205 Wiring forming layer
106, 206 Third barrier film
107, 207 Electroluminescent device formation layer
108, 208 Fourth barrier film
109, 209 First sealant
110, 210 sealing substrate
111, 211 Element formation layer
112, 212 Second sealant
120 first opening
121 Second opening
123 Region a
220 region b
221 region c
223 region d

Claims (7)

A first barrier film;
A TFT formation layer provided on the first barrier film;
A second barrier film provided on the TFT formation layer;
A wiring formation layer provided on the second barrier film;
A third barrier film provided on the wiring formation layer;
An electroluminescent element forming layer provided on the third barrier film;
A fourth barrier film provided on the electroluminescent element formation layer,
Said second barrier film, the bottom surface of the first opening provided in the TFT formation layer, and contact with the first barrier film,
The light-emitting device , wherein the TFT layer is covered with the first barrier film and the second barrier film . In claim 1,
The third barrier film is in contact with the first barrier film at the bottom surface of the second opening provided in the wiring formation layer, so that the TFT formation layer has the first barrier film and the first barrier film. 3 is covered with a barrier film. In claim 2,
The light emitting device, wherein the second opening is provided outside the first opening. In any one of Claims 1 thru | or 3,
The fourth barrier film is in contact with the third barrier film on the side surface of the wiring formation layer, so that the lower side of the electroluminescent element formation layer is covered with the third barrier film. A light-emitting device, wherein an upper surface is covered with the fourth barrier film. In any one of Claims 1 thru | or 4,
The light-emitting device, wherein the first barrier film and the fourth barrier film are in contact with each other around the wiring formation layer. In any one of Claims 1 thru | or 5,
The first barrier film and the fourth barrier film are in contact with each other below a sealing material provided between a substrate on which the first barrier layer is provided and a sealing substrate facing the substrate. A light emitting device characterized by that. In any one of Claims 1 thru | or 6,
The electroluminescent element forming layer is smaller than the wiring forming layer,
The light emitting device, wherein the fourth barrier layer is in contact with the third barrier layer on an upper surface of the wiring formation layer, and is in contact with the first barrier layer in the periphery of the wiring formation layer.

Images