JP3910757B2 - Processing apparatus and processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing apparatus and a processing method for performing a predetermined processing by supplying a processing liquid to a substrate such as a semiconductor wafer.
[0002]
[Prior art]
In general, in a semiconductor device manufacturing process, for example, a semiconductor wafer (hereinafter referred to as “wafer”) is cleaned with a predetermined cleaning solution to remove contamination such as particles, organic contaminants, and metal impurities attached to the wafer surface. Cleaning devices are used to do this. Among them, a batch type cleaning apparatus is widely used that removes particles and the like from a wafer by storing a plurality of wafers in a cleaning tank configured to be supplied with a cleaning liquid and cleaning the wafer.
[0003]
Since the conventional cleaning apparatus is normally configured to perform only the cleaning process with one type of cleaning liquid in the cleaning tank, for example, when a wafer is cleaned using an acidic chemical solution and an alkaline chemical solution, Therefore, it is necessary to separately provide a cleaning tank using an acidic chemical and a cleaning tank using an alkaline chemical, and as a result, an excessive footprint is required. Therefore, recently, one-bath (One-Bath) method (one tank) has a function of alternately supplying and discharging one type or two or more types of chemicals and pure water into one cleaning tank. Multi-drug type, also referred to as single tank)) is attracting attention. In addition to the cleaning apparatus, for example, a gas processing apparatus that performs a drying process on a wafer using a plurality of processing gases, and the like, such a one-bus system is also attracting attention.
[0004]
[Problems to be solved by the invention]
However, if it is used as a one-bath type cleaning apparatus with the configuration of the conventional cleaning apparatus, a plurality of different types of cleaning liquids are supplied into one cleaning tank. When different types of cleaning processes are continuously performed in one tank, the cleaning liquid used in the previous cleaning process and remaining in the tank and the cleaning liquid used in the next cleaning process are stored in the tank. Will cause the following problems. For example, in order to remove inorganic contaminants such as metal impurities from the surface of a wafer, cleaning is performed such that an acidic cleaning liquid (for example, SPM), pure water, and an alkaline cleaning liquid (for example, APM) are sequentially supplied into one cleaning tank. When the process is performed, the acidic cleaning solution and the alkaline cleaning solution react to generate cross contamination such as salt. Then, the wafer may be recontaminated by the salt generated in this way. The same applies to gas processing apparatuses that use a plurality of different types of processing gases.
[0005]
Accordingly, an object of the present invention is to provide a processing apparatus and a processing method capable of preventing occurrence of cross-contamination and processing failure even when processing using a plurality of types of processing fluids is performed.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present invention comprises an outer cleaning chamber that encloses a substrate and performs liquid processing, and an inner cleaning chamber that is capable of moving forward and backward within the outer cleaning chamber. A processing apparatus comprising: a cleaning chamber; and a moving means for switching between a state in which the inner cleaning chamber has entered the outer cleaning chamber and a state in which the inner cleaning chamber has been withdrawn from the outer cleaning chamber. A holding tool for holding the stored substrate and a lid for opening and closing the outer cleaning chamber, and in the state where the inner cleaning chamber is inserted into the outer cleaning chamber, the atmosphere of the inner cleaning chamber is changed to the outer cleaning chamber. A seal is provided to prevent leakage , Drainage ports are provided at the bottom of the outer cleaning chamber and the bottom of the inner cleaning chamber, respectively. It is characterized by that.
[0007]
The present invention In the processing equipment of Processing fluid Depending on the type, different processing chambers can be moved around the substrate. For this reason, even if each processing fluid may remain in each processing chamber, different types of processing fluids are not mixed in the same processing chamber by changing the processing chamber. The processing fluid includes a liquid such as a processing liquid and a gas such as a processing gas.
[0008]
In this processing apparatus, the moving means switches between a state in which the inner cleaning chamber has entered the outer cleaning chamber and a state in which the inner cleaning chamber has been withdrawn from the outer cleaning chamber, depending on the type of processing fluid. It may be configured. For example, when an acidic processing fluid and an alkaline processing fluid are supplied to a substrate to process the substrate, different processing chambers are moved around the substrate when supplying an acidic processing fluid and supplying an alkaline processing fluid. Let Thereby, even if the processing fluid remains in the processing chamber, the acidic processing fluid and the alkaline processing fluid do not react with each other, and the occurrence of cross contamination such as salt can be prevented.
The processing gas may be supplied to at least one of the outer cleaning chamber and the inner cleaning chamber. In this case, as the processing gas, for example, N ₂ Inert gas such as (nitrogen) gas, vapor of organic solvent such as IPA, N ₂ A mixed gas of gas and IPA vapor or the like is used. N ₂ If gas is supplied to the processing chamber, processing in an inert atmosphere can be performed. IPA steam, N ₂ If a mixed gas of gas and IPA vapor is supplied to the processing chamber, drying of the processing fluid can be promoted, and for example, a watermark during drying can be prevented.
Further, the inner cleaning chamber may leave the outer cleaning chamber when the substrate is carried in and out.
Moreover, you may provide the casing which arrange | positions the said inside washing | cleaning chamber retreated from the said outside washing | cleaning chamber inside.
In addition, a discharge port for discharging the processing liquid is disposed at the upper part of the outer cleaning chamber and the upper part of the inner cleaning chamber, respectively. In a state where the inner cleaning chamber has entered the outer cleaning chamber, the processing liquid is discharged from the discharge port disposed at the upper portion of the inner cleaning chamber to the substrate, and the inner cleaning chamber is withdrawn from the outer cleaning chamber, Discharge the processing liquid onto the substrate from the discharge port located in the upper part of the outer cleaning chamber. May be.
[0013]
According to the invention, the step of storing the substrate in the outer cleaning chamber, the step of closing the outer cleaning chamber with a lid after storing the substrate in the outer cleaning chamber, the inner cleaning chamber in the outer cleaning chamber, In a state where the atmosphere of the inner cleaning chamber is not leaked to the outer cleaning chamber, and the substrate is stored in the inner cleaning chamber. Discharge the processing liquid from the top and drain from the bottom drain A step of performing a liquid treatment, a step of leaving the inner cleaning chamber from the outer cleaning chamber after completion of the processing in the inner cleaning chamber, and a state in which the substrate is stored in the outer cleaning chamber. Discharge the processing liquid from the top and drain from the bottom drain A process of liquid treatment and Are given in order A processing method is provided which is characterized by the above.
In this case, the outer cleaning chamber may be opened after the processing in the outer cleaning chamber is completed. Further, the substrate may be dried before the outer cleaning chamber is opened.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
A preferred embodiment of the present invention will be described based on a cleaning apparatus configured to store, for example, 25 wafers in a cleaning tank and clean them with reference to the accompanying drawings.
[0015]
FIG. 1 shows a state in which the internal structure of the cleaning apparatus 1 for explaining the present embodiment is viewed from the front side. However, as shown in FIG. 1, the cleaning apparatus 1 has enough 25 wafers W. The outer cleaning tank 3 having an outer cleaning chamber 2 (which may be referred to as a first cleaning chamber) that can be surrounded with a sufficient margin, and the outer cleaning chamber 3 of the outer cleaning tank 3 can be moved forward and backward. The inner cleaning tank 5 having an inner cleaning chamber 4 (which may be referred to as a second cleaning chamber) that can surround the wafer W in the outer cleaning chamber 2, and the inner cleaning tank 5 in the outer cleaning tank 3. To move the inner cleaning chamber 4 to the periphery of the wafer W and to move the inner cleaning tank 5 out of the outer cleaning tank 3 and switch the state to the state where the periphery of the wafer W is surrounded by the outer cleaning chamber 2 And a mechanism 6.
[0016]
As a cleaning process performed in the cleaning apparatus 1, for example, in order to remove inorganic contaminants such as metal impurities from the surface of the wafer W, an SPM (H ₂ SO ₄ / H ₂ O ₂ SPM cleaning using a cleaning liquid called a mixed liquid) is performed, and rinse cleaning with pure water is performed. Thereafter, in the outer cleaning tank 3, APM (NH) mainly composed of an ammonia component is performed. ₄ OH / H ₂ O ₂ / H ₂ SC1 cleaning using a cleaning solution called a mixed solution of O), rinsing with pure water, IPA (isopropyl alcohol) vapor and heated N ₂ A drying process using a dry gas mixed with a gas is performed.
[0017]
An opening 3a is formed on the upper surface of the outer cleaning tank 3, and the wafer W is carried into and out of the cleaning device 1 through the opening 3a. The opening 3a is opened and closed by a lid 10 configured to move up and down and horizontally. The lid 10 shown by a solid line in FIG. 1 shows a state in which the opening 3a on the upper surface is opened, and the lid 10 'shown by a two-dot chain line in FIG. 1 shows a state in which the opening 3a on the upper surface is closed. ing. A casing 11 is fixed to the lower surface of the outer cleaning tank 3, and an inner cleaning tank 5 evacuated downward from the outer cleaning tank 3 is disposed in the casing 11. In the illustrated example, the inner cleaning tank 5 can freely pass through the opening 3b formed on the lower surface of the outer cleaning tank 3 in the vertical direction. In the cleaning apparatus 1, a cylinder 12 is provided that penetrates the center of the casing 11 and the inner cleaning tank 5 and reaches the lower center of the outer cleaning tank 3, and a support shaft 13 is provided inside the cylinder 12. Is provided. A table 14 is connected to the upper end of the support shaft 13.
[0018]
FIG. 2 shows a state in which the internal structure of the outer cleaning tank 3 is seen from the plane direction, and FIG. 3 shows a state seen from the side surface direction. As shown in FIGS. 2 and 3, a pair of left and right holders 16a and 16b are provided on the upper surface of the table 14, and the peripheral edge of the wafer W is inserted into the peripheral surfaces of the holders 16a and 16b. For example, 25 grooves 17 are formed. Therefore, when 25 wafers W are loaded into the cleaning apparatus 1, the wafer W is erected in the outer cleaning chamber 2 by inserting the peripheral edges of the wafers W into the grooves 17 of the holders 16a and 16b. W is configured to be accommodated. In addition, at the upper part of the outer cleaning chamber 2, there are disposed four discharge portions 21 with a large number of discharge ports 20 for discharging a cleaning liquid (APM, pure water) in the horizontal direction. Therefore, when the wafer W is cleaned in the outer cleaning tank 3, the wafer W is set on the table 14, and then the discharge port 20 discharges the cleaning liquid from above the wafer W. Each of the surfaces can be cleaned uniformly. The discharge port 20 is also configured to spray the cleaning liquid onto the wafer W. Further, as shown in FIG. 1, a drainage port 22 is provided at the bottom of the outer cleaning tank 3, and a drainage tube 24 having an on-off valve 23 is connected to the drainage port 22. By opening 23, the cleaning liquid in the outer cleaning chamber 2 can be drained to the outside.
[0019]
The lower surface of the inner cleaning tank 5 is connected to an elevating shaft 25 of an elevating mechanism 6 composed of a cylinder device or a motor. The elevating mechanism 6 moves up and down to move the inner cleaning tank 5 up and down. The inner cleaning tank 5 is taken in and out of the outer cleaning tank 3 through the opening 3 b on the lower surface of the tank 3. As shown in FIG. 4, by moving the inner cleaning tank 5 into the outer cleaning tank 3 by operating the elevating mechanism 6, the inner cleaning chamber 4 is moved around the wafer W, and the wafer W is moved into the inner cleaning chamber 4. Can be stored. FIG. 5 shows a state in which the internal structure of the outer cleaning tank 3 at this time is viewed from the plane direction. If the inner cleaning tank 5 is withdrawn from the outer cleaning tank 3 by operating the elevating mechanism 6 from this state, the wafer W is stored from the inner cleaning chamber 4 into the outer cleaning chamber 2 as shown in FIG. It can be switched to the state.
[0020]
As shown in FIG. 4, when the inner cleaning tank 5 enters the outer cleaning tank 3, the seal portion 30 provided on the upper surface of the inner cleaning tank 5 is in close contact with the ceiling surface of the outer cleaning chamber 2, and The seal portion 31 provided at the upper peripheral edge of the cylindrical body 12 is in close contact with the bottom surface of the inner cleaning tank 5 so that the atmosphere of the inner cleaning chamber 4 does not leak into the outer cleaning chamber 2. In addition, in the upper part of the inner cleaning chamber 4, there are four discharge portions 33 equipped with a number of discharge ports 32 for discharging a cleaning liquid (SPM, pure water) at four locations in the horizontal direction. The cleaning liquid is discharged toward the wafer W from above. Further, a drain port 34 is provided at the bottom of the inner cleaning tank 5, and a drain tube 36 having an open / close valve 35 is connected to the drain port 34.
[0021]
In addition, as shown in FIG. 6, the discharge port 20 has an IPA vapor and heated N ₂ An outlet of a dry gas supply circuit 40 that supplies a gas mixture is connected. At the inlet of the dry gas supply circuit 40, N ₂ A supply source 41 is connected, and in the middle, a three-way valve 42, a bubbling unit 43 in which IPA liquid is stored, a filter 44 that allows only gas to pass, and three-way governing whether or not to send dry gas to the discharge port 20 A valve 45 is interposed. Further, a connection circuit 46 for connecting the three-way valve 42 and the three-way valve 45 is provided. Here, by switching the three-way valve 42, N ₂ N heated from source 41 ₂ (Nitrogen) gas is passed through the bubbling portion 43 at a rate of about 100 liters / min to 200 liters / min, and the bubbling portion 43 is brought into a high bubbling state. The mesh plate 47 provided in the bubbling portion 43 allows N ₂ Change the gas into fine bubbles to make the IPA liquid easier to vaporize. And IPA vapor and heated N ₂ When a mixed gas of gas is generated and flows out from the bubbling portion 43, the droplet component is removed by the filter 44, and then passes through the switched three-way valve 45 to be sent to the discharge port 20. . On the other hand, by switching the three-way valves 42 and 45, the heated N ₂ Only gas may be sent to the discharge port 20. In this embodiment, IPA vapor and heated N ₂ Gas mixture and heated N ₂ Although the case where only the gas is supplied has been described, the IPA liquid may be supplied to the wafer W depending on the type of drying process.
[0022]
Next, cleaning of the wafer W performed in the cleaning apparatus 1 configured as described above will be described. For example, in order to effectively remove inorganic contaminants such as metal impurities from the surface of the wafer W, the cleaning apparatus 1 performs cleaning processes in the order of, for example, SPM cleaning, rinse cleaning, SC1 cleaning, rinse cleaning, and drying processing. The
[0023]
First, as shown in FIG. 1, in a state in which the inner cleaning tank 5 is retracted from the outer cleaning tank 3 by the lifting mechanism 6, the transfer arm (not shown) removes 25 wafers W that have not been cleaned yet. The wafer is carried into the outer cleaning tank 3 through the opening 3a on the opened upper surface, and the peripheral edge of the wafer W is inserted into the groove 17 of each of the holders 16a and 16b. When the wafer W is stored in the outer cleaning chamber 2 in a vertical posture, the opening 6 a on the upper surface is closed by the lid 10.
[0024]
By the way, in such a cleaning process, SPM (H ₂ SO ₄ / H ₂ O ₂ Liquid mixture) is an acidic cleaning liquid, and APM (NH ₄ OH / H ₂ O ₂ / H ₂ Since the mixed solution of O) is an alkaline cleaning solution, it is important to prevent the SPM and APM from reacting and causing cross contamination such as salt.
[0025]
Therefore, according to the cleaning apparatus 1 according to the present embodiment, when performing a predetermined cleaning process using such SPM, pure water, and APM, the elevating mechanism 6 is arranged in accordance with the type of cleaning liquid. The inner cleaning chamber 4 is moved around W. When supplying SPM and pure water to the wafer W, the wafer W is accommodated in the inner cleaning chamber 4 to perform SPM cleaning to subsequent rinse cleaning, and supply APM and pure water to the wafer W. At times, the wafer W is accommodated in the outer cleaning chamber 2 so that the process from the SC1 cleaning to the drying process is performed. For this reason, even if SPM remains in the inner cleaning chamber 4 and APM may remain in the outer cleaning chamber 2, the cleaning chamber for storing the wafer W is changed every time the SPM and APM are used. These SPM and APM are not mixed in the same tank. Therefore, occurrence of cross contamination such as salt can be prevented.
[0026]
That is, first Inside cleaning room 4 When performing the SPM cleaning in FIG. 4, as shown in FIG. 4, the elevating mechanism 6 moves the inner cleaning chamber 4 around the wafer W by moving the inner cleaning tank 5 into the outer cleaning tank 3. The state is switched to the state in which the wafer W is stored in the cleaning chamber 4. Then, the SPM is discharged from the discharge port 32 and uniformly supplied to the entire surface of each of the 25 wafers W. Thus, SPM cleaning is performed to remove particles and the like from the surface of the wafer W. After the SPM cleaning, pure water is supplied to the wafer W from the discharge port 32 to perform rinsing cleaning, and the SPM is cleaned cleanly from the wafer W.
[0027]
Then Outside washing room 2 When the SC1 cleaning is performed, as shown in FIG. 1, the elevating mechanism 6 retracts the inner cleaning tank 5 from the outer cleaning tank 3 and switches to a state where the wafer W is stored in the outer cleaning chamber 2. . As in the SPM cleaning, APM is discharged from the discharge port 20 to remove inorganic contaminants such as particles and metals from the surface of the wafer W. After the SC1 cleaning, pure water is supplied to the wafer W from the discharge port 20 to perform rinsing cleaning, and the APM is washed away cleanly from the wafer W. In this way, different types of SPM and APM can be supplied to the inner cleaning chamber 4 and the outer cleaning chamber 2, respectively.
[0028]
Finally, a drying gas is ejected from the discharge port 20 to dry the wafer W. In this case, as shown in FIG. 6, the heated N bubbling unit 43 in which the IPA liquid is stored ₂ N gas heated and dried with IPA vapor as dry gas ₂ A gas mixture is generated and supplied to the discharge port 20 through the dry gas supply circuit 40. N ₂ By supplying the gas, the drying process can be performed in an inert atmosphere, and the IPA vapor supplied to the surface of the wafer W replaces the remaining water droplets on the wafer W and is effective from the surface of the wafer W. Pure water can be removed. Thus, the IPA vapor and heated N in the outer cleaning chamber 2 ₂ If the gas mixture is supplied, drying of the wafer W can be promoted, and for example, generation of a watermark during drying can be prevented. Therefore, the drying process can be performed in a shorter time and better than natural drying. Thus, when the predetermined cleaning process is completed, the opening 3a on the upper surface is opened, and the wafer W can be unloaded from the cleaning apparatus 1. As other drying methods, for example, IPA vapor and heated N ₂ N heated after feeding gas mixture ₂ The process of supplying only the gas to the wafer W, or N heated after supplying the IPA liquid ₂ For example, a process of supplying only gas to the wafer W can be performed.
[0029]
Thus, according to the cleaning apparatus 1 of the present embodiment, when the cleaning process is performed by supplying the SPM that is an acidic cleaning liquid and the APM that is an alkaline cleaning liquid to the wafer W, an inner cleaning chamber is formed in the outer cleaning tank 3. By advancing and retracting 4, it is possible to switch to a state in which the wafer W is housed in different cleaning chambers. As a result, even if SPM remains in the inner cleaning chamber 4 and APM remains in the inner cleaning chamber 4, the SPM and APM do not react and the occurrence of cross-contamination such as salt occurs. Can be prevented.
[0030]
In the present embodiment, the case where the wafer W is stood up and stored in the outer cleaning chamber 2 has been described. However, as shown in FIG. 7, the outer cleaning is performed with the wafer W tilted obliquely. It may be stored in the chamber 2. Even in such a configuration, each of the 25 wafers W can be uniformly cleaned.
[0031]
Next, a cleaning device 50 according to the second embodiment will be described with reference to FIGS. The cleaning apparatus 1 performs SPM cleaning and SC1 cleaning by the discharge ports 20 and 32. The cleaning apparatus 50 shown in FIGS. 8 and 9 fills the inner cleaning chamber 4 with SPM and immerses the wafer W therein. Thus, the SPM cleaning is performed, and then the APM is filled in the outer cleaning chamber 2 and the wafer W is immersed therein to perform the SC1 cleaning. Hereinafter, the specific configuration of the cleaning device 50 will be described. Among the components provided in the cleaning device 50, the same components and components as those of the cleaning device 1 described above are the same. Duplicated explanations are omitted by adding symbols.
[0032]
8 shows a state in which the inner cleaning tank 5 has exited from the outer cleaning tank 3 as in FIG. 1, and FIG. 9 shows a state in which the inner cleaning tank 5 has entered into the outer cleaning tank 3 as in FIG. Show. As shown in FIGS. 8 and 9, a drain / supply port 51 is provided at the bottom of the outer cleaning chamber 2, and a drain / supply tube 52 is connected to the drain / supply port 51. . A drainage tube 55 for draining the cleaning liquid in the outer cleaning chamber 2 is connected to the drainage / supply tube 52 via three-way valves 53 and 54. The three-way valve 53 is connected to an APM supply tube 57 for supplying APM from the APM supply source 56 into the outer processing chamber 2, and the three-way valve 54 is connected to pure water from a pure water (DIW) supply source 58. Is connected to a pure water supply tube 59 for supplying the water into the outer processing chamber 2. Accordingly, if one of the APM supply tube 57 and the pure water supply tube 59 is conducted to the drainage / supply tube 52 by the switching operation of the three-way valves 53 and 54, APM or pure water is introduced into the outer cleaning chamber 2. On the other hand, if the drainage / supply tube 53 and the drainage tube 55 are connected to each other, the cleaning liquid can be drained from the outer cleaning chamber 2.
[0033]
Further, a drainage pipe 60 is provided in the outer cleaning chamber 2 so as to stand along the inner surface. Since the drainage pipe 60 is opened at the upper part of the outer processing chamber 2, the cleaning liquid can overflow from the outer cleaning chamber 2 when the cleaning liquid is filled up to a predetermined water level. A drainage tube 62 having an on-off valve 61 is connected to the drainage pipe 60, and the overflowed cleaning liquid can be drained to the outside through the drainage tube 62 by opening the on-off valve 61. In addition, a plurality of gas discharge ports 63 for discharging dry gas are provided on the ceiling surface of the outer cleaning chamber 2.
[0034]
In addition, a drain / supply port 65 is provided at the bottom of the inner cleaning chamber 4 as in the outer cleaning chamber 2, and a drain / supply tube 66 is connected to the drain / supply port 65. A drainage tube 69 is connected to the drainage / supply tube 66 via three-way valves 67 and 68. The three-way valve 67 is connected to an SPM supply tube 71 for supplying SPM from the SPM supply source 70 into the inner processing chamber 4, and the three-way valve 68 is connected to pure water from a pure water (DIW) supply source 72. Is connected to a pure water supply tube 73 for supplying the water into the outer processing chamber 2. Accordingly, by switching the three-way valves 67 and 68, SPM or pure water can be supplied into the inner cleaning chamber 4, and the cleaning liquid can be discharged from the inner cleaning chamber 4. Further, a drainage pipe 74 is provided in the inner cleaning chamber 4 along the inner surface as in the outer cleaning chamber 2 so that the cleaning liquid can overflow from the inner cleaning chamber 4. . A drain tube 76 having an open / close valve 75 is connected to the drain pipe 74, and the overflowed cleaning liquid can be drained to the outside.
[0035]
The cleaning of the wafer W performed by the cleaning apparatus 50 configured as described above will be described. As shown in FIG. 8, after the 25 wafers W that have not been cleaned are stored in the outer cleaning chamber 2 in a vertical posture, the inner cleaning chamber 4 is operated by the operation of the elevating mechanism 6 as shown in FIG. Is moved around the wafer W to perform SPM cleaning. In this case, the three-way valve 67 is switched to the SPM supply tube 71 side, the SPM is supplied into the inner cleaning chamber 4 to immerse the wafer W in the SPM, and on the other hand, the on-off valve 75 is opened to overflow. Particles removed from the surface of the wafer W together with the SPM are discharged from the upper portion of the inner cleaning chamber 4 through the drain tube 74 and the drain tube 76. In this way, SPM cleaning is performed.
[0036]
After the SPM cleaning is completed, the three-way valves 67 and 68 are switched to the drain tube 69 side, and the SPM is drained into the inner cleaning chamber 4. Thereafter, the three-way valve 68 is switched to the pure water supply tube 73 side, the inner cleaning chamber 4 is filled with pure water, the wafer W is immersed in pure water, and rinse cleaning is performed. Also in this case, pure water is caused to overflow from the upper part in the inner cleaning chamber 4. Further, the three-way valve 68 may be appropriately switched to the drainage tube 69 side to repeat immersion and drainage.
[0037]
Next, when SC1 cleaning is performed in the outer cleaning chamber 2, as shown in FIG. 8, the elevating mechanism 6 moves the inner cleaning tank 5 out of the outer cleaning tank 3 and puts the wafer W in the outer cleaning chamber 2. Switch to the stowed state. Then, the three-way valve 53 is switched to the APM supply tube 57 side, APM is supplied into the outer cleaning chamber 2 so that the wafer W is immersed in the APM, while the on-off valve 61 is opened to overflow the APM. At the same time, inorganic substances such as particles and metals removed from the surface of the wafer W are discharged from the upper part of the outer cleaning chamber 2 through the drainage pipe 60 and the drainage tube 62. In this way, SC1 cleaning is performed.
[0038]
After the SC1 cleaning is completed, the three-way valves 53 and 54 are switched to the drain tube 55 side, and the APM in the inner cleaning chamber 4 is drained. Thereafter, the three-way valve 54 is switched to the pure water supply tube 59 side, the pure water is filled in the outer cleaning chamber 2, and the wafer W is immersed in pure water to perform rinsing cleaning. Also in this case, pure water overflows from the upper part in the outer cleaning chamber 2. Further, the three-way valve 54 may be appropriately switched to the drainage tube 55 side to repeat the immersion and drainage. Finally, dry gas 63 and IPA vapor and heated N ₂ A mixed gas of gas is supplied, and the wafer W is dried. Thus, the predetermined cleaning process can be suitably performed also in the cleaning apparatus 50 that immerses the wafer W in the cleaning liquid.
[0039]
Next, a third embodiment will be described with reference to FIG. As shown in FIG. 10, the cleaning apparatus 80 according to the third embodiment is configured to perform cleaning by discharging cleaning liquid and DIP cleaning on the wafer W. That is, the outer cleaning chamber 2 is provided with a discharge portion 21 and the inner cleaning chamber 4 is provided with a discharge portion 33, respectively, so that SPM and APM can be discharged onto the wafer W from above. . Further, the outer cleaning chamber 2 includes circuit components such as a drainage / supply port 51, a drainage / supply tube 52, and a drainage tube 60, and the inner cleaning chamber 4 includes a drainage / supply port 65, Circuit components such as the drainage / supply tube 66 and the drainage pipe 74 are provided so that the wafer W can be immersed in SPM, APM, and pure water, respectively. In such a configuration, since various cleaning processes can be performed by freely combining cleaning by discharging cleaning liquid and DIP cleaning, a highly versatile apparatus can be realized.
[0040]
Further, the substrate is not limited to the wafer W, but may be an LCD substrate, a glass substrate, a CD substrate, a photomask, a printed substrate, a ceramic substrate, or the like. Furthermore, the present invention is not limited to mere cleaning, for example, an apparatus or method for applying a predetermined processing liquid to a substrate, or a processing gas containing a predetermined reaction component is supplied into a processing chamber to perform a physical or chemical reaction. The present invention can also be applied to an apparatus and a method for processing a substrate by raising the substrate, such as a plasma etching apparatus, a plasma CVD apparatus, and a vacuum processing apparatus.
[0041]
【The invention's effect】
The present invention According to the present invention, when a predetermined processing step is performed using a plurality of processing liquids, the processing chamber for storing the substrate can be changed every time a different type of processing liquid is used. Are not mixed in the same tank. In particular, If the moving means is configured to move the plurality of processing chambers to the periphery of the substrate according to the type of processing liquid, it is possible to prevent occurrence of cross contamination and processing failure.
[0042]
The present invention Accordingly, drying of the substrate can be promoted, and generation of a watermark during drying can be prevented. Therefore, the drying process can be performed in a shorter time and better than natural drying.
[0043]
According to the present invention, Generation of cross contamination and processing failure can be prevented.
[Brief description of the drawings]
FIG. 1 is an explanatory cross-sectional view of an internal structure of a cleaning device according to an embodiment as viewed from the front.
2 is an explanatory plan view showing an internal structure of an outer cleaning tank provided in the cleaning apparatus of FIG. 1; FIG.
3 is an explanatory cross-sectional view of the internal structure of the outer cleaning tank provided in the cleaning apparatus of FIG. 1 as viewed from the side.
4 is an explanatory cross-sectional view of the internal structure of the cleaning apparatus of FIG. 1 as viewed from the front when the inner cleaning tank has entered the outer cleaning tank.
5 is an explanatory plan view showing the internal structure of the outer cleaning tank provided in the cleaning apparatus of FIG. 1 when the inner cleaning tank enters the outer cleaning tank. FIG.
FIG. 6 is a circuit diagram of a dry gas supply circuit.
7 is an explanatory cross-sectional view of the internal structure of the external cleaning tank provided in the cleaning apparatus of FIG. 1 when viewed from the side when the wafer is stored in the external cleaning chamber in an obliquely inclined state.
FIG. 8 is an explanatory cross-sectional view of the internal structure of the cleaning apparatus according to the second embodiment as viewed from the front.
9 is an explanatory cross-sectional view of the internal structure of the cleaning apparatus of FIG. 8 as viewed from the front when the inner cleaning tank has entered the outer cleaning tank.
FIG. 10 is an explanatory cross-sectional view of an internal structure of a cleaning device according to a third embodiment as viewed from the front.
[Explanation of symbols]
1 Cleaning device
2 Outside washing room
4 Internal cleaning room
6 Lifting mechanism
21, 33 Discharge part
W wafer

Claims (8)

An outer cleaning chamber that surrounds the substrate and performs liquid processing, and is configured to be able to move forward and backward in the outer cleaning chamber. The inner cleaning chamber that encloses the substrate in the outer cleaning chamber and that performs liquid processing, and the inner cleaning chamber are inserted into the outer cleaning chamber. A processing apparatus comprising a state and a moving means for switching between an inner cleaning chamber and a state in which the inner cleaning chamber is withdrawn from the outer cleaning chamber,
A holder for holding the substrate stored in the outer cleaning chamber; and a lid for opening and closing the outer cleaning chamber;
In a state where the inner cleaning chamber has entered the outer cleaning chamber, a seal portion is provided to prevent the atmosphere of the inner cleaning chamber from leaking into the outer cleaning chamber ,
A processing apparatus, wherein a drainage port is provided at each of a bottom portion of the outer cleaning chamber and a bottom portion of the inner cleaning chamber .   The moving means is configured to switch between a state in which the inner cleaning chamber has entered the outer cleaning chamber and a state in which the inner cleaning chamber has been withdrawn from the outer cleaning chamber, depending on the type of processing fluid. The processing apparatus according to claim 1, wherein: The processing apparatus according to claim 1, wherein the inner cleaning chamber has left the outer cleaning chamber when a substrate is carried in and out. The processing apparatus according to any one of claims 1 to 3, further comprising a casing in which the inner cleaning chamber retreated from the outer cleaning chamber is disposed. Discharge ports for discharging the processing liquid are respectively arranged at the upper part of the outer cleaning chamber and the upper part of the inner cleaning chamber, and arranged at the upper part of the inner cleaning chamber in a state where the inner cleaning chamber enters the outer cleaning chamber. The process liquid is discharged from the discharge port onto the substrate, and the process liquid is discharged onto the substrate from the discharge port disposed at the top of the outer cleaning chamber in a state in which the inner cleaning chamber is withdrawn from the outer cleaning chamber. The processing apparatus in any one of Claims 1-4. Storing the substrate in the outer cleaning chamber;
  A step of closing the outer cleaning chamber with a lid after storing the substrate in the outer cleaning chamber;
  A step of allowing an inner cleaning chamber to enter the outer cleaning chamber so that the atmosphere of the inner cleaning chamber does not leak into the outer cleaning chamber;
  A step of discharging the processing liquid from the top while the substrate is housed in the inner cleaning chamber, and discharging the liquid from the drain port at the bottom to perform liquid processing;
  A step of leaving the inner cleaning chamber out of the outer cleaning chamber after the processing in the inner cleaning chamber is completed;
  A step of discharging the processing liquid from the top while the substrate is housed in the outer cleaning chamber, and discharging the liquid from the drain port at the bottom to perform liquid processing;
  A processing method, characterized by being sequentially applied. The processing method according to claim 6, wherein the outer cleaning chamber is opened after finishing the processing in the outer cleaning chamber. The processing method according to claim 7, wherein the substrate is dried before the outer cleaning chamber is opened.

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