JP3863174B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP3863174B2 JP3863174B2 JP2006129459A JP2006129459A JP3863174B2 JP 3863174 B2 JP3863174 B2 JP 3863174B2 JP 2006129459 A JP2006129459 A JP 2006129459A JP 2006129459 A JP2006129459 A JP 2006129459A JP 3863174 B2 JP3863174 B2 JP 3863174B2
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- Prior art keywords
- light
- converted
- substrate
- light emitting
- led
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
また、請求項3の発明は、400nm未満の光を吸収する基板と、前記基板の第1の面上に設けられた凹部を有するケースと、前記基板の第1の面上であって、前記ケースの凹部内に設けられた半導体発光素子と、前記ケースの凹部内に形成され、前記半導体発光素子から発光される光を波長の異なる変換光に変換して放出する波長変換部と、前記波長変換部からみて前記半導体発光素子と反対側に設けられ、前記波長変換部から放出された変換光を前記基板側に反射する反射板とを備え、前記半導体発光素子から発光された光を前記波長変換部において波長の異なる変換光に変換し、当該変換光のうち前記半導体発光素子近傍で変換された変換光を前記基板の第1の面からみて反対側の第2の面側から取り出すとともに、その他の変換光を前記反射板で反射して前記基板の第2の面側から取り出し、前記波長変換部において波長の異なる変換光に変換されなかった400nm未満の光を前記基板により吸収するように構成されたことを特徴とする発光装置である。
図1(a)〜(e)は、実施形態1に係わるLEDランプの製造過程を示す概略断面図である。
図3(a)、(b)は、実施形態2に係わるLEDランプの製造過程を示す概略断面図である。この実施形態2では、実施形態1と同一構造のUV−LEDを用いている。
図5(a)、(b)は、実施形態3に係わるLEDランプの製造過程を示す概略構成図である。この実施形態3に係わるLEDランプの基本的な構成は実施形態2とほぼ同じであり、図5では、図3及び図4と同等部分を同一符号で示している。
図6(a)〜(c)は、実施形態4に係わるLEDランプの製造過程を示す概略断面図である。この実施形態においても、光源部となる半導体発光素子としてUV−LEDを用いている。
(2)活性層がInGaNの場合、In組成に応じて中心波長は365〜380nm
(3)AlGaN/InAlGaNの場合、中心波長は340〜380nm
(4)BGaNの場合、中心波長は300〜365nm
また、波長変換部に用いられるR、G、Bの蛍光体としては、例えば以下のものを用いることができる。
緑色 3(Ba、Mg、Eu、Mn)0・8Al(subscript:2)0(subscript:3)
赤色 La(subscript:2)0(subscript:2)S:Eu、Sm
また、プレートやサブマウントなどの光取り出し部に用いられるUV吸収材としては、例えば以下のものを用いることができる。
(2)2−(2−hydroxy−5−methylphenyl)−2Hbenzotriazle
(3)2−(3−tert−butyl−2−hydroxy−5−methylphenyl)−5−chloro−2H−benzotriazle
(4)2−(2−hydroxy−5−tert−octyphenyl)−2H−benzotriazle
(5)ethy12−cyano−3、3−diphenylacrylate
11、21、41 UV−LED
12、42 プレート
14、23、43、50 金属層
18、24、31、48 蛍光体層
19、27、49 反射板
22、32 サブマウント
26 フレーム
47 ケース
Claims (4)
- 所定の周波数範囲の光を吸収する基板と、
前記基板の第1の面上に設けられた半導体発光素子と、
前記基板の第1の面側に形成され、当該半導体発光素子から発光される光を波長の異なる変換光に変換して放出する波長変換部と、
を備え、前記半導体発光素子から発光された光を前記波長変換部において波長の異なる変換光に変換し、当該変換光を前記基板の第1の面からみて反対側の第2の面側から取り出すとともに、前記波長変換部において波長の異なる変換光に変換されなかった所定の周波数範囲の光を前記基板により吸収するように構成されたことを特徴とする発光装置。 - 前記波長変換部から放出された変換光を前記基板側に反射する反射板を前記波長変換部からみて前記半導体発光素子と反対側に設けたことを特徴とする請求項1に記載の発光装置。
- 400nm未満の光を吸収する基板と、
前記基板の第1の面上に設けられた凹部を有するケースと、
前記基板の第1の面上であって、前記ケースの凹部内に設けられた半導体発光素子と、
前記ケースの凹部内に形成され、前記半導体発光素子から発光される光を波長の異なる変換光に変換して放出する波長変換部と、
前記波長変換部からみて前記半導体発光素子と反対側に設けられ、前記波長変換部から放出された変換光を前記基板側に反射する反射板と、
を備え、前記半導体発光素子から発光された光を前記波長変換部において波長の異なる変換光に変換し、当該変換光のうち前記半導体発光素子近傍で変換された変換光を前記基板の第1の面からみて反対側の第2の面側から取り出すとともに、その他の変換光を前記反射板で反射して前記基板の第2の面側から取り出し、前記波長変換部において波長の異なる変換光に変換されなかった400nm未満の光を前記基板により吸収するように構成されたことを特徴とする発光装置。 - 前記半導体発光素子は、UV光又は青色光を放出することを特徴とする請求項1乃至3のいずれか一項に記載の発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006129459A JP3863174B2 (ja) | 2006-05-08 | 2006-05-08 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006129459A JP3863174B2 (ja) | 2006-05-08 | 2006-05-08 | 発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005290438A Division JP3863169B2 (ja) | 2005-10-03 | 2005-10-03 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006261688A JP2006261688A (ja) | 2006-09-28 |
JP3863174B2 true JP3863174B2 (ja) | 2006-12-27 |
Family
ID=37100500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006129459A Expired - Fee Related JP3863174B2 (ja) | 2006-05-08 | 2006-05-08 | 発光装置 |
Country Status (1)
Country | Link |
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JP (1) | JP3863174B2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
JP2010512660A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 無極性および半極性の発光デバイス |
JP5786278B2 (ja) * | 2010-04-07 | 2015-09-30 | 日亜化学工業株式会社 | 発光装置 |
WO2015157178A1 (en) | 2014-04-07 | 2015-10-15 | Crystal Is, Inc. | Ultraviolet light-emitting devices and methods |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
KR102318317B1 (ko) | 2014-05-27 | 2021-10-28 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조 |
WO2015181648A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | An optoelectronic device |
KR102427203B1 (ko) | 2014-05-27 | 2022-07-29 | 실라나 유브이 테크놀로지스 피티이 리미티드 | n-형 및 p-형 초격자를 포함하는 전자 디바이스 |
US12027652B2 (en) | 2018-12-27 | 2024-07-02 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
EP3905348B1 (en) | 2018-12-27 | 2024-01-24 | Denka Company Limited | Light-emitting substrate, and lighting device |
KR20210105893A (ko) * | 2018-12-27 | 2021-08-27 | 덴카 주식회사 | 형광체 기판, 발광 기판 및 조명 장치 |
KR20210106433A (ko) | 2018-12-27 | 2021-08-30 | 덴카 주식회사 | 형광체 기판, 발광 기판 및 조명 장치 |
EP3905345B1 (en) | 2018-12-27 | 2024-01-24 | Denka Company Limited | Light-emitting substrate, and lighting device |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01205480A (ja) * | 1988-02-12 | 1989-08-17 | Iwasaki Electric Co Ltd | 発光ダイオード及びled面発光光源 |
EP0856202A2 (en) * | 1996-06-11 | 1998-08-05 | Koninklijke Philips Electronics N.V. | Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
JP3992770B2 (ja) * | 1996-11-22 | 2007-10-17 | 日亜化学工業株式会社 | 発光装置及びその形成方法 |
JP4024892B2 (ja) * | 1996-12-24 | 2007-12-19 | 化成オプトニクス株式会社 | 蓄光性発光素子 |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
JP2947344B2 (ja) * | 1997-08-19 | 1999-09-13 | サンケン電気株式会社 | 発光ダイオード装置 |
JP3966954B2 (ja) * | 1997-09-01 | 2007-08-29 | 東芝電子エンジニアリング株式会社 | 照明装置、読み取り装置、投影装置、浄化装置、および表示装置 |
JPH1187778A (ja) * | 1997-09-02 | 1999-03-30 | Toshiba Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
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2006
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