JP3862089B2 - Semiconductor chip connection structure and wiring board used therefor - Google Patents

Description

  The present invention relates to a connection structure of a semiconductor chip to a wiring board and a wiring board used therefor.

  As a method of connecting a semiconductor chip to a wiring board, the semiconductor chip and a wiring board having an electrode opposite thereto are bonded and bonded by interposing an adhesive between them and pressurizing or heating and pressing. It is known to obtain a conductive connection. As an adhesive in this case, an insulating adhesive is used to obtain conductivity by direct contact between both electrodes, or a different particle containing conductive particles to the extent that conductivity can be obtained only in the thickness direction by pressing. A method is known in which conductive particles are interposed between both electrodes by using a conductive adhesive.

Japanese Patent Laid-Open No. 06-005735 Japanese Patent Laid-Open No. 03-244140 Japanese Patent Laid-Open No. 06-232205 JP 05-235089 A Japanese Unexamined Patent Publication No. 03-029207 Japanese Utility Model Publication Sho 62-193623 Japanese Utility Model Publication Sho 62-088378

  Recently, attempts have been made to reduce the thickness of a semiconductor chip, thereby reducing the thickness of electronic components such as an IC card and a liquid crystal display, and improving portability and operability. For example, as a thin electronic component, the thickness of a prepaid card is about 0.25 mm, and in the case of a bar code label, it is about 0.15 mm. As for the thickness of the semiconductor chip used for these, for example, the conventional thickness of about 0.6 mm to about 0.3 mm is halved, and in the extreme case, the thickness of about 0.02 mm is studied, and the thickness is decreasing. In this case, if an adhesive is interposed between the semiconductor chip and the wiring board and then pressurization or heat pressurization, the chip warps and the connection reliability is significantly lowered. In addition, since the central portion of the semiconductor chip is easily deformed at the time of connection, there is a drawback that it is difficult to carry as a thin electronic component due to a decrease in adhesive strength and bending strength due to residual stress.

  In addition, the thickness of the semiconductor chip is reduced and the flexibility is increased, making it easier to withstand deformation when carried. However, if there are more adhesion defects due to air bubbles in the connection with the substrate, the bending strength is increased as described above. Decreases and reliability becomes insufficient. Further, when the flow of the adhesive is insufficient, there is a drawback that the contact between the electrodes or the electrode and the conductive particles is insufficient and a low connection resistance cannot be obtained. The present invention has been made in view of the above-described drawbacks, and relates to a connection structure of a semiconductor chip to a wiring board capable of obtaining excellent connection reliability even when the thickness of the semiconductor chip is thin, and a wiring board used therefor.

The present invention is a connection structure of a semiconductor chip having a large number of electrodes on the peripheral edge and a wiring board having electrodes opposed thereto, wherein the semiconductor chip and / or the electrodes of the wiring board are projected from an insulating surface. , contact does not include a peripheral portion electrode connection after the semiconductor chip is a dummy electrode of the protruding electrode substantially equal height in a region surrounded by them is provided, when the dummy electrode is obtained by projecting the connection surface, circular And / or a semiconductor chip connection structure in which a plurality of polygonal shapes are present in a connection region, and the semiconductor chip having a thickness of 0.3 mm or less and a wiring board are connected by an adhesive, the dummy electrode When the connection surface is projected, either a triangular shape, an L (L) shape, or a plurality of these two types exist in the connection region, and the vertexes are formed toward the center of the connection region. Semiconductor Tsu is a connection structure of flops.

At this time, the dummy electrodes are arranged radially from the center to the periphery of the connection region, the connection surface is uneven, the dummy electrode is conductive and / or insulating, Embodiments are provided that are arranged symmetrically with respect to the central portion. In addition, the adhesive contains conductive particles to the extent that conductivity can be obtained only in the thickness direction by pressurization, and if necessary, contains smaller particles that are smaller than the conductive particles and harder than the conductive particles. A semiconductor chip connection structure, wherein the wiring board has an electrode corresponding to a peripheral electrode of the semiconductor chip to be connected, and a height substantially equal to that of the electrode in a region not including the electrode and surrounded by the electrode. A dummy electrode is provided, and when the connection surface is projected, the dummy electrode has a circular shape and / or a polygonal shape, and there are plural or more in the connection region, and these vertices and / or non-openings are in the center of the connection region. The present invention relates to a wiring board that is disposed toward a portion.

  According to the present invention, even when the thickness of the semiconductor chip is thin, the dummy electrode having a height substantially equal to the protruding electrode exists in the region surrounded by the peripheral electrode of the semiconductor chip, and the dummy electrode is arranged. Since the arrangement is such that bubbles are easily removed, there is no warping of the chip, and a flexible connection and excellent connection reliability can be obtained.

  The present invention will be described with reference to the drawings. 1 to 4 are schematic cross-sectional views of a semiconductor chip connection structure for explaining an embodiment of the present invention. 1 and 2 use a bumpless chip as the semiconductor chip 1, and FIGS. 3 and 4 show a case with bumps (projection electrodes 7). The semiconductor chip 1 is in the direction of reducing the thickness as described above, and the present invention is particularly effective when the chip is thin and the flexibility of the chip is increased. The semiconductor chip 1 is typically silicone, gallium arsenide, or the like, but may be chips of other similar electronic components.

  The electrode 2 of the present invention is generally Al which is the wiring of the semiconductor chip 1, but Cu, Au, solder, Cr, Ni, Ag, Mo, Ta, Sn, ITO (indium oxide), conductive inks, and the like. It may be a compound, a mixture or a multilayer structure mainly composed of these. On the surface side of the electrode 2, an insulating layer 3 made of silicon nitride, silicone oxide, polyimide, or the like having a thickness of 5 μm or less and usually about 1 to 2 μm is formed so that the electrode 2 is exposed. As shown in FIG. 3, a protruding electrode 7, commonly called a bump, may be formed on the exposed portion of the electrode 2. In the present invention, a chip without a bump is called a bumpless chip (FIGS. 1 and 2). When the portion where the electrode 2 is exposed is formed on the peripheral portion of the semiconductor chip 1, it is frequently used because input / output to the connection substrate is easy. Here, the peripheral portion may be two or more sides (described later, FIGS. 5, c and d). The protruding electrode 7 may be formed on the substrate 4 side (FIG. 2) or on both sides (not shown), and may include various circuits and terminals. In this case, the bumpless chip is preferable because the manufacturing process is shortened.

  Examples of the substrate 4 include plastic films such as polyimide and polyester, composites such as glass and epoxy, semiconductors such as silicon, and inorganic materials such as glass and ceramics, and the circuit 5 is provided via an adhesive (not shown) as necessary. . The material of the circuit 5 is not particularly limited, but the same material as that exemplified for the electrode 2 can be applied. The thickness of the circuit 5 is about 0.1 to 50 μm. Generally, when the thickness is several μm or more, it is formed of copper foil or conductive paint. If there are no irregularities from the surface of the substrate 4 or the surface of the insulating layer 3 or even a few μm or less, it is typical to obtain electrodes by an additive method or a thin film method. These materials and thicknesses are selected in consideration of characteristics such as conductivity and corrosiveness and economy.

The dummy electrode 6 is formed on the connection surface side of the substrate 4 (FIGS. 1-2), the semiconductor chip 1 (FIGS. 3-4), or both (not shown), and the formation part projects the semiconductor chip 1 after connection. sometimes, the formed in the protruding electrode substantially equal height semiconductors chip 1 of the peripheral portion electrode 2 in a region surrounded by. It is particularly preferable to form the dummy electrode 6 on the substrate 4 side because it can be formed simultaneously with the circuit by plating or etching during circuit processing. The detailed arrangement of the dummy electrodes 6 will be described below with reference to the projection views of the semiconductor chip after connection shown in FIGS. When the connection surface is projected, the dummy electrode 6 has a circular shape and / or a polygonal shape, and a plurality of dummy electrodes 6 exist in the connection region. Basically, it is formed in a polygonal shape such as a straight line shape (FIGS. 5a and 5b), an ellipse shape or a U shape (a part of FIGS. 5a and 5b), a triangular shape (FIG. 5d), or a circular shape (FIG. 5c). It can be applied in any combination or combination.

  At this time, in consideration of the fluidity of the adhesive at the time of connection, the air bubbles are extruded from the center portion to the end portion so that the arrangement is difficult to remain inside. That is, the arrangement is such that the adhesive can smoothly flow from the center to the end of the semiconductor chip 1. As shown in FIG. 6, when the connection surface 8 in the peripheral electrode is projected as shown in FIG. 6, the dummy electrodes can be smoothly flowed in a triangular shape (a), an elbow (L) shape (b), a half Either a circle (arc) shape (c) or a U-shape (d) or two or more of them are arranged, and the apex and / or the closed side is formed toward the center of the connection region. It is preferable that these are divided into a plurality of parts because the divided part further promotes the flow of the adhesive. For the same reason, as illustrated in FIGS. 6A, 6B, the dummy electrodes 6 may be arranged radially from the center of the connection region toward the periphery. Furthermore, as shown in FIG. 6A, it is also preferable to give the corners appropriate roundness so that the adhesive can flow smoothly.

  In these cases, since the adhesive can smoothly flow from the central part of the connection region toward the periphery, there is no mixing of bubbles in the connection part, and the contact between the electrodes or between the electrode and the conductive particles is sufficient, resulting in a low connection resistance. can get. When the dummy electrode is divided into a plurality of parts, the divided part becomes a flow path for the adhesive, and a better connection as described above can be obtained. In the flow of the adhesive due to heating and pressurization at the time of connection, the adhesive between the upper and lower electrodes first flows between adjacent electrodes (spaces), and then protrudes outside the chip outside the connection region while filling the space. Therefore, in the present invention, the process of flowing while filling the space is important, and at this time, the dummy electrode is disposed so as not to hinder the flow.

  As shown in the cross-sectional view of the dummy electrode 6 shown in FIG. 7, when the surface of the connection surface of the electrode is uneven, the conductive particles and the hard particles are easily held on these electrodes. Moreover, since the uneven | corrugated shape is made into a groove | channel (a), a wave shape, and a stripe shape (b, c), for example, since the flow of an adhesive agent can be performed more smoothly, it is suitable for implementation of this invention. In this case, the depth of the recess is preferably 0.5 μm or more, and more preferably 1 μm or more. The depth of the concave portion can also be displayed by average roughness (JIS, B0601, 10-point average roughness). Moreover, it is preferable to use a trapezoidal shape or an inverted trapezoidal shape as in (d, e) because the fluidity of the adhesive is improved. In addition, the dummy electrode 6 is symmetrical to the left and / or right and / or vertically symmetrical with respect to the center of the connection region, so that the flow of the adhesive is uniform, air bubbles are less likely to be mixed, and good connection from the viewpoint of maintaining strength against bending. Since it is obtained, it is preferable.

  As the dummy electrode 6, in addition to the conductive material exemplified in the above-described electrode 2 and circuit 5, an insulating material exemplified in the insulating layer 3 can also be applied. That is, it is only necessary that the dummy electrode 6 can be connected without causing a large deformation when being pressed or heated and pressurized. Therefore, it is only necessary to have a heat resistance equal to or higher than that of the constituent material of the substrate or semiconductor chip described above.

  The height of the dummy electrode 6 in the present invention is substantially the same as that of the protruding electrode 7, but some consideration is required. That is, when the circuit 5 having the configuration shown in FIG. 1 also serves as the protruding electrode, it may be equivalent to the circuit 5, but in FIGS. 2 to 4, the sum of the circuit 5 and the protruding electrode 7. When the protruding electrode 7 is formed on the insulating layer 3 as shown in FIGS. 3 to 4, the height from the insulating layer 3 is set. As shown in FIG. 8, the adhesive 11 used in the present invention obtains conductivity by direct contact between both electrodes using an insulating adhesive (FIG. 8a) (possible in FIGS. 2 to 4, with protruding electrodes 7). Or a method in which conductive particles are interposed between both electrodes using an anisotropic conductive adhesive (FIG. 8 b) containing conductive particles 12 having a degree of conductivity obtained only in the thickness direction by pressurization ( Both of these are possible. These may be liquid or film, but a film that can be obtained in a continuous form with a constant thickness is preferred. Further, when an anisotropic conductive adhesive containing conductive particles as shown in FIG. 8b is used, there is no need to newly provide a protruding electrode 7 as shown in FIG. Advantageous and preferred. The content of the conductive particles 12 that can provide conductivity only in the thickness direction by pressurization is about 0.1 to 15% by volume, preferably 0.3 to 10% by volume, with respect to the insulating adhesive 11. . These are determined in consideration of the connection pitch and the connection electrode area.

  Furthermore, since the film-like product (FIGS. 8c to 8d) in which the insulating adhesive 11 and the anisotropic conductive adhesive are laminated can be connected by separating the insulating and conductive functions, it is particularly useful for high pitch connection. is there. FIG. 9 shows a configuration in which the structure of FIG. 1 is connected with the adhesive of FIG. 8c (two layers). In the adhesive on the substrate 4 side, the concentration of the adhesive 11 'containing no conductive particles is dominant, and an improvement in insulation is obtained. The insulating adhesive 11 can be used for electronic parts including ordinary thermoplasticity, but a reactive adhesive is preferable. As the latter example, a material that exhibits curability by heat or light can be widely applied. Since these are excellent in heat resistance and moisture resistance after connection, application of a curable material is preferable. Among these, epoxy adhesives can be preferably applied in view of the characteristics that they can be cured in a short time, have good connection workability, and have excellent adhesion in terms of molecular structure. Epoxy adhesives include, for example, high molecular weight epoxy, solid epoxy and liquid epoxy, urethane, polyester, acrylic rubber, NBR, nylon, etc. modified epoxy as the main component, curing agent, catalyst, coupling agent, filler, etc. What is added is generally.

  As a hardening | curing agent in this invention, in order to maintain the preservability of a connection member, it is preferable that it is latent. The term “latency” as used in the present invention means a material that has a shelf life of 2 months or more at 30 ° C. or less in the coexistence with a reactive resin (for example, an epoxy resin) and rapidly cures under heating. Examples of the conductive particles 12 include metal particles such as Au, Ag, Pt, Ni, Cu, W, Sb, Sn, and solder, carbon, and the like. These conductive particles are used as a core material or non-conductive glass. Alternatively, a core material made of a polymer such as ceramics or plastic may be coated with a conductive layer made of the above-described material. Furthermore, insulating coating particles obtained by coating the conductive particles 12 with an insulating layer, or a combination of conductive particles and insulating particles can be applied.

  The upper limit of the particle diameter is preferably 1 or more, preferably 5 or more on a minute electrode, and a small particle diameter is suitable for ensuring a large number of particles, and is 50 μm or less, more preferably 20 μm or less. The lower limit of the particle size should be 0.5 μm or more, preferably 1 μm or more in order to cope with the thickness larger than the thickness of the insulating layer 3 and the unevenness of the electrode surface, and to prevent excessive aggregation of particles. Among these conductive particles 12, those in which a conductive layer is formed on a polymer core material such as a hot-melt metal such as solder or a plastic have deformability by heating or pressurization or contact with a circuit during lamination. This is preferable because the area is increased and the reliability is improved. In particular, when a polymer is used as a core, it does not show a melting point as in the case of solder, so that the softening state can be widely suppressed at the contact temperature, and a connection member that can easily cope with variations in electrode thickness and flatness can be obtained. .

  Also, for example, in the case of hard metal particles such as Ni and W, or particles having a large number of protrusions on the surface, the conductive particles pierce the electrodes and the wiring pattern, so that even when an oxide film or a contamination layer is present, a low connection resistance is obtained. It is preferable because it is obtained and reliability is improved. The conductive particles 12 are preferably spherical particles having a uniform particle size with a small particle size distribution. If the particle size distribution is small, it is held between the electrodes by pressurization at the time of connection, and there is little outflow. The distribution width of the particle diameter is preferably set to 1/2 or less of the maximum particle diameter in consideration of the unevenness of the connection surface. For example, in the case of deformable particles obtained by coating a polymer core with a conductive layer, there are also highly accurate particles having a center diameter within ± 0.2 μm, which can be particularly preferably applied. Further, in the case of hard metal particles, since they pierce the electrodes, the distribution width of the particle diameters may be relatively wide as 1/2 or less of the maximum particle diameter.

  It is also possible to use hard particles in combination with conductive particles (FIG. 8e). The hard particles include the conductive particles and insulating particles described above, and have an effect of adjusting the gap of the connection electrode. Further, since the thickness of the adhesive can be controlled to be constant during heating and pressing, the adhesive force can be obtained stably. In the case of gap adjustment, the particle size is preferably smaller than that of the conductive particles and is harder than that of the conductive particles. When the insulating particles are used in combination, the insulation with the adjacent electrode can be improved. Insulating particles include inorganic substances such as glass, silica, and ceramics, and organic substances such as polystyrene, epoxy, and benzoguanamine, and these may be spherical or fibrous. These can be used alone or in combination.

  According to the present invention, even when the thickness of the semiconductor chip is as thin as 0.3 mm or less, the dummy electrode having substantially the same height as the protruding electrode exists in the region surrounded by the peripheral electrode of the semiconductor chip. Even if the adhesive is interposed between the chip and the wiring substrate and pressed or heated and pressed, the chip does not warp and the connection reliability is remarkably improved. Further, since the central portion of the semiconductor chip is hardly deformed at the time of connection, there is no residual stress after contact, and the bending strength is sufficient to withstand carrying as a thin electronic component. The dummy electrode is arranged in a shape that prevents bubbles from being pushed out from the center to the end in consideration of the fluidity of the adhesive at the time of connection. High connection reliability can be obtained. In addition, when the circuit electrodes and dummy electrodes of the wiring board as a preferred embodiment have substantially the same height, since they can be formed simultaneously by plating or etching during circuit processing, they can be formed easily without adding a special process. Easy to get at cost.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited thereto.
Example 1
(1) Semiconductor chip As a semiconductor chip, the exposed portion of a 100 μm square aluminum electrode called a pad is surrounded by silicon nitride having a size of 2 × 10 mm, a thickness of 100 μm, and a connection surface of 1.5 μm in thickness, and the periphery of four sides. 200 test chips were used.
(2) Wiring board A circuit terminal made of a glass epoxy board having a thickness of 0.1 mm, a copper foil having a thickness of 15 μm corresponding to the size of the electrode pad of the IC chip, and an area surrounded by the circuit terminals, An equilateral triangular dummy electrode having a height substantially equal to that of the (protruding electrode) and having a side of 500 μm was arranged and formed by an etching method so that the apex of the triangle comes to the chip center side as shown in FIG. The area ratio of the dummy electrodes in the region was about 50%, and the average roughness (JIS) was 1.4 μm.
(3) Anisotropic conductive film The ratio of the liquid epoxy resin (epoxy equivalent 185) containing a high molecular weight epoxy resin and a microcapsule type latent curing agent was 20/80, and a 30% solution of ethyl acetate was obtained. To this solution, 5% by volume of conductive particles in which a Ni / Au metal coating having a thickness of 0.2 / 0.02 μm was added to polystyrene particles having a particle size of 8 ± 0.2 μm was added and mixed and dispersed. This dispersion was applied to a separator (silicone-treated polyethylene terephthalate film, thickness 40 μm) with a roll coater and dried at 110 ° C. for 20 minutes to obtain an anisotropic conductive film having a thickness of 15 μm.
(4) Connection The anisotropic conductive film was cut into 3 × 12 mm, which was slightly larger than the semiconductor chip, and attached to the wiring board. Thereafter, the separator was peeled off, the pads of the semiconductor chip and the terminals of the circuit board were aligned, and connected at 170 ° C., 20 kgf / mm ² for 15 seconds.
(5) Evaluation When the opposing electrodes were evaluated as connection resistance and between adjacent electrodes as insulation resistance, the connection resistance was 0.1Ω or less and the insulation resistance was 10 ⁸ Ω or more, which were 85 ° C. and 85%. Even after treatment with RH for 1000 hours, there was almost no change, and good long-term reliability was exhibited. When the cross section of this connection body was polished and observed with a microscope, it was a connection structure corresponding to FIG. Further, the semiconductor chip was hardly warped, and there were no bubbles in the connection part.

Example 2
Although it is the same as that of Example 1, the structure of the wiring board was changed. That is, a circuit and a dummy electrode (average roughness of 2.3 μm) having a thickness of 15 μm were formed by a printing method using Ag paste on a polyethylene terephthalate film having a thickness of 250 μm. When evaluated in the same manner, the connection structure shown in FIG. 1 was obtained in this case as well, but no warping of the semiconductor chip was observed, and there was little air bubble mixing, indicating good long-term reliability. Since the connection resistance was an Ag paste circuit, it was 1Ω or less, although it was slightly higher than Example 1, and the insulation resistance was 10 ⁸ Ω or more.

Comparative Examples 1-2
Although it is the same as that of Examples 1-2, the dummy electrode of the wiring board was not provided. Together with the glass epoxy (Comparative Example 1) and film (Comparative Example 2) substrate, the connection resistance was as high as about 100Ω maximum, and an open occurred after treatment at 85 ° C. and 85% RH for 1000 hours. These were warped in a shape where the central part of the semiconductor chip was recessed.

Examples 3-4
Although it is the same as that of Examples 1-2, what added 2 volume% of Ni particle | grains with a particle size of 3 +/- 0.1 micrometer further to the anisotropic conductive film was used. When the connection evaluation was made in the same manner, both the glass epoxy (Example 3) and the film (Example 4) substrate were connected at a constant thickness with a Ni particle diameter of 3 μm, and the polystyrene particles were deformed. The connection area with the electrode increased and it was connected and showed good long-term reliability.

Example 5
Although it is the same as that of Example 1, the shape of the dummy electrode of the wiring board is an ellipse with one side opened to the outside of 1 mm, and the area ratio of the dummy electrode in the region is about 40%. Also in this case, no warpage of the semiconductor chip was observed, and good long-term reliability was shown. Since the dummy electrode has a structure in which air bubbles are pushed out from the central portion to the end portion and hardly remain inside, a good connection without bubbles in the connection portion was obtained.

Example 6
As in Example 3, Au bumps (3 μm height from the silicon nitride surface) were formed on the pads of the semiconductor chip. Again, good long-term reliability was demonstrated. Although the dummy electrode was formed only on the wiring substrate side and not on the semiconductor chip, it was connected with a Ni particle diameter of about 3 μm, and a good result was shown.

Examples 7 to 9 and Comparative Example 3
Although it is the same as that of Example 1, the shape of the dummy electrode of a semiconductor chip and a wiring board was changed. The semiconductor chip is 5 mm square and has a thickness of 0.05 mm (Example 7), 0.1 mm (100 μm... Example 8), 0.3 mm (Example 9), and 0.6 mm (Comparative Example). Further, a test chip was used in which the connection surface was covered with silicon nitride having a thickness of 1.5 μm, and 100 exposed portions of 100 μm square aluminum electrodes called pads were formed around the periphery of the four sides. The wiring board is the same as in Example 1, a glass epoxy board having a thickness of 0.1 mm, a circuit terminal made of a copper foil having a thickness of 15 μm corresponding to the size of the electrode pad of the IC chip, and a region surrounded by the circuit terminals Inside, the circuit (projection electrode) has an L-shape (corresponding to FIG. 6B) opened to the outside with a width pitch of approximately 1 mm, and the area ratio of the dummy electrode in the region is about 60%. In Examples 7 to 9, no warpage of the semiconductor chip was observed, and good long-term reliability was exhibited. A good connection without bubbles in the connection was obtained. When the substrate to which the semiconductor chip was connected was bent with a round bar as the axis, the electrical connection was maintained until the round bar had a radius of 10 mm, 25 mm (Example 8), and 40 mm (Example 9). The thinner the semiconductor chip is, the more flexible it is, and all are practical. On the other hand, in the case of the conventional thickness semiconductor chip of Comparative Example 3, since the chip was not flexible, disconnection occurred easily at 100 mm, and the bending strength was poor.

Example 10, Reference Examples 1 and 2
Same as Example 7, but the dummy electrodes are semicircular (corresponding to FIG. 6c, Reference Example 1), U-shaped (corresponding to FIG. 6d, Reference Example 2), triangular radial (corresponding to FIG. 6e, Example) 10). The initial connection resistances were 0.015, 0.022, and 0.012Ω in order from Reference Examples 1 and 2 and Example 10. In each of the reference examples and examples, no warpage of the semiconductor chip was observed, and good long-term reliability was shown. In any case, a good connection with no bubbles at the connection part was obtained.

Comparative Example 4
Although the same as in Example 7, the shape of the dummy electrode was a 3 mm square and one was formed in the center of the connection region. In this case, the average connection resistance was 12Ω, which was higher than the 0.010Ω in Example 7, and the variation was large. In the case of Comparative Example 4, it was difficult to remove the adhesive at the time of connection, and many bubbles were observed around the dummy electrode. In addition, since only one dummy electrode is formed at the center of the connection region, the flexible connection was lowered to 50 mm in the bending test.

It is a cross-sectional schematic diagram of a connection structure showing an embodiment of the present invention. It is a cross-sectional schematic diagram of the connection structure which shows another Example of this invention. It is a cross-sectional schematic diagram of the connection structure which shows another Example of this invention. It is a cross-sectional schematic diagram of the connection structure which shows another Example of this invention. It is a top view of the wiring board with a dummy electrode which shows one Example of this invention. It is a top view of the dummy electrode which shows one Example of this invention. It is a cross-sectional schematic diagram of the dummy electrode which shows one Example of this invention. It is a cross-sectional schematic diagram which shows the structure of the adhesive agent suitable for implementation of this invention. It is a cross-sectional schematic diagram of the connection structure which shows the other Example of this invention.

Explanation of symbols

1. Semiconductor chip Electrode 3. Insulating layer 4. Substrate 5. Circuit 6 Dummy electrode 7. Projecting electrode 8. 10. Connection surface Adhesive 12. Conductive particles 13. Hard particles

Claims (5)

A semiconductor chip having a plurality of electrodes on the periphery, to which a connection structure of a wiring board having opposing electrodes, the semiconductor chip and / or the wiring substrate of the electrode is by projecting from the insulating surface, after connection A dummy electrode having substantially the same height as the protruding electrode is provided in a region surrounded by the semiconductor chip not including the peripheral electrode of the semiconductor chip, and the dummy electrode has a triangular shape, an L (L ) Any one of the letter shapes or a plurality of these two types exist in the connection region, and the apexes thereof are formed toward the center of the connection region, and the semiconductor chip having a thickness of 0.3 mm or less A semiconductor chip connection structure in which a wiring board is connected with an adhesive. 2. The semiconductor chip connection structure according to claim 1, wherein the dummy electrode is conductive and / or insulative and is disposed symmetrically with respect to the center of the connection region. The semiconductor chip connection structure according to claim 1 or 2, wherein the adhesive contains conductive particles to the extent that conductivity can be obtained only in the thickness direction by pressurization. 4. The semiconductor chip connection structure according to claim 3, wherein the adhesive further contains particles smaller in size than the conductive particles and harder than the conductive particles. An electrode corresponding to the peripheral electrode of the semiconductor chip to be connected, and a dummy electrode having substantially the same height as the electrode are provided in a region not including the electrode and surrounded by the electrode, and the dummy electrode has a connection surface. When projected, either a triangular shape, an el (L) shape, or a plurality of these two types exist in the connection region, and the vertices thereof are arranged toward the center of the connection region. substrate.

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