JP3679782B2 - Exposure apparatus and semiconductor chip manufacturing method using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an exposure apparatus and a method of manufacturing a semiconductor chip using the same, and more particularly, a fine electronic circuit pattern such as an IC or LSI formed on a reticle (mask) surface is projected onto a wafer by a projection lens system (projection optical system). An exposure apparatus having a function of observing a state on a wafer surface via a projection lens system with light having a wavelength different from that of the light for exposure while projecting on the surface and manufacturing of a semiconductor chip using the same Regarding the method.
[0002]
[Prior art]
In a microprojection exposure apparatus for semiconductor manufacturing, a reticle circuit pattern as a first object is projected onto a wafer as a second object by a projection lens system and exposed, and an observation apparatus (detection) is performed prior to this projection exposure. The alignment mark on the wafer is detected by observing the wafer surface using a means, and the position alignment of the reticle and the wafer, so-called alignment, is performed based on the detection result.
[0003]
The alignment accuracy at this time largely depends on the optical performance of the observation apparatus. For this reason, the performance of the observation apparatus is an important factor in the exposure apparatus.
[0004]
Conventionally, in an exposure apparatus, the alignment mark formed on the wafer surface is observed with an observation microscope system, the position of the alignment mark is detected using the projected image signal, and the wafer position information is often obtained. Yes.
[0005]
In particular, in recent years, light having a relatively wide wavelength range as non-exposure light has been used as observation illumination light mainly for the following two reasons.
[0006]
The first reason is that when observing the alignment mark formed on the wafer surface, in many cases, a photosensitive material (resist) to which an electronic circuit pattern is transferred is applied on the wafer surface. Resist usually absorbs a lot at the exposure wavelength, which makes it difficult to detect the alignment mark on the wafer through the resist film at the exposure wavelength. There is a problem that the resist is exposed to light and the detection of the alignment mark becomes unstable or cannot be detected, and a detection method using non-exposure light is desired.
[0007]
The second reason is that when illumination light for observation of non-exposure light, for example, light having a relatively wide wavelength width by a halogen lamp is used, a monochromatic light source such as a He-Ne laser is used to mark the AA mark on the wafer. It is possible to reduce interference fringes caused by uneven film thickness of various functional films used in resist films and semiconductor processes, which are likely to occur when observed, and to achieve better alignment.
[0008]
For this reason, the observation microscope system for alignment marks corrects various aberrations for observation illumination light with a relatively wide wavelength range using non-exposure light so that alignment marks can be detected satisfactorily. ing.
[0009]
[Problems to be solved by the invention]
As an apparatus for detecting the alignment mark as described above, there is an alignment apparatus disclosed in Japanese Patent Laid-Open No. 4-223326. Here, an alignment optical system for observing an alignment mark with alignment light having a certain wavelength band is disclosed. In this alignment optical system, an optical element in which three prisms are bonded is put into a parallel light beam by a collimator lens. By arranging, the lateral chromatic aberration generated by the alignment light having a wavelength band is corrected. However, when such a prism is arranged in the parallel light beam, coma aberration occurs because the light beam is incident on the subsequent imaging lens for condensing the parallel light beam in a decentered state, resulting in alignment accuracy. The problem arises that the remarkably decreases. When light having a wide wavelength range is used as illumination light for observation, as shown in FIGS. 9A, 9B, and 9C, errors such as processing errors or assembly errors of each element of the observation microscope system, specifically However, there is a problem in that the position of the image signal projected on the detection surface is projected at a different position depending on the color due to the wedge component of the prism, the tilt with respect to the optical axis, the decentration error of the lens, and the like. FIGS. 9A, 9B, and 9C show a state where a color shift occurs on the projection screen due to the wedge component of the prism 91, the tilt of the prism 91 with respect to the optical axis, and the eccentricity error of the lens.
[0010]
As a result, when the film thickness of the resist applied on the wafer surface, the film thicknesses of various functional films used in the semiconductor process, the film thickness of the alignment mark formed on the wafer surface, etc. are changed, for example, as shown in FIG. As the spectral characteristics of the alignment mark detection signal formed on the wafer surface change, the position of the image signal projected on the detection surface changes, resulting in an alignment error, which causes a problem of degrading alignment accuracy.
[0011]
The present invention provides an improved mark detection function capable of detecting the position of a mark image with high accuracy when detecting a mark via a projection lens system using detection light (alignment light) having a wavelength different from that of exposure light. It is an object of the present invention to provide an exposure apparatus having the above and a semiconductor chip manufacturing method using the same.
[0012]
An exposure apparatus according to a first aspect of the present invention provides a projection optical system that projects a pattern of a first object onto a second object with exposure light, and performs relative alignment between the first object and the second object. An exposure apparatus comprising: a detection unit that illuminates the second object with detection light having a plurality of wavelengths and detects mark information on the second object;
The detection means includes two lenses made of materials having different dispersions for correcting the deviation of the mark image between the plurality of wavelengths generated on the detection surface, and a position where a light beam focused on the detection surface is in a converged state. It is characterized in that it can be eccentrically provided.
[0013]
The invention of claim 2 is the invention of claim 1, characterized in that the detection light is light having a wavelength different from that of the exposure light.
According to a third aspect of the present invention, in the first aspect of the invention, the detection light is light that does not sensitize the second object.
The invention of claim 4 is characterized in that, in the invention of claim 1, 2 or 3, the light source of the detection light is a halogen lamp.
According to a fifth aspect of the present invention, in the first aspect of the present invention, the two lenses made of materials having different dispersions are joined to each other.
[0014]
According to a sixth aspect of the present invention, there is provided a semiconductor chip manufacturing method that uses the exposure apparatus according to any one of the first to fifth aspects to illuminate a circuit pattern of the first object, thereby projecting the circuit via a projection optical system. A pattern image is projected and transferred onto the second object.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a schematic view of the essential part of the optical system of Reference Example 1 when the present invention is applied to an exposure apparatus for manufacturing semiconductor elements.
[0019]
In the figure, reference numeral 8 denotes a reticle as a first object, which is placed on the reticle stage 10. Reference numeral 3 denotes a wafer as a second object, on which an alignment mark (AA mark) 4 is provided. A projection optical system 5 includes a projection lens system, and projects a circuit pattern on the reticle (mask) 8 surface onto the wafer 3 surface. The projection lens system 5 is a telecentric system on both the reticle 8 side and the wafer 3 side.
[0020]
An illumination system 9 illuminates the reticle 8 with exposure light. Reference numeral 2 denotes a θ, Z stage on which the wafer 3 is mounted, and θ rotation and focus adjustment of the wafer 3, that is, adjustment in the Z direction is performed. The θ, Z stage 2 is placed on the XY stage 1 for performing the step operation with high accuracy. An optical square (bar mirror) 6 serving as a reference for stage position measurement is placed on the XY stage 1, and this optical square 6 is monitored by a laser interferometer 7.
[0021]
In this reference example, the alignment (alignment) between the reticle 8 and the wafer 3 is performed indirectly by aligning each of the later-described reference marks 17 for which the positional relationship is obtained in advance. Alternatively, the resist image pattern or the like is actually aligned and exposed, its error (offset) is measured, and offset processing is performed in consideration of the value thereafter.
[0022]
Next, each element of the detection means 101 for detecting the position of the mark 4 on the wafer 3 surface will be described.
[0023]
Reference numeral 11 denotes an observation microscope which observes the AA mark 4 on the wafer 3 surface with non-exposure light.
[0024]
In this reference example, an off-axis method is used in which alignment is performed without using the projection lens 5.
[0025]
Reference numeral 14 denotes a light source for detecting the AA mark 4, which includes a halogen lamp that emits a light beam (non-exposure light) having a wavelength different from the wavelength of the exposure light. Reference numeral 15 denotes a lens that collects a light beam (detection light) from the light source 14 and makes it incident on a beam splitter 16 for illumination. Reference numeral 12 denotes an objective lens.
[0026]
Reference numeral 13 denotes a lens group as an optical element, which is configured to be decentered from the optical axis S in order to correct coma generated in the observation microscope 11.
[0027]
In this reference example, the lens group 13 is composed of two lenses, a positive lens and a negative lens made of materials having different dispersions, and corrects chromatic aberration.
[0028]
Detection light from lens 15 is reflected by the beam splitter 16 is reflected by the mirror M _1, it is illuminated by guiding the AA mark 4 on the wafer 3 surface through the lens unit 13 and the objective lens 12.
[0029]
Reference numeral 19 denotes a light source for illuminating the reference mark 17 and is composed of an LED or the like. Reference numeral 18 denotes a lens. The light beam from the light source 19 is condensed by the lens 18, guided to the reference mark 17 and illuminated. 20 is a beam splitter for the reference marks, by reflecting the light beam from the reference mark 17 is incident on erector lens 21 via a mirror M _2. The erector lens 21 images the reference mark 17 and the AA mark 4 on the wafer 3 surface on the imaging surface of the CCD camera 22, respectively. The detection means 101 in this reference example has the above elements.
[0030]
In this reference example, the non-exposure light (detection light) emitted from the light source 14 sequentially illuminates the AA mark 4 on the wafer 3 through the lens 15, the beam splitter 16, the mirror M ₁ , the lens group 13, and the objective lens 12. Observation image information of the AA mark 4 on the wafer 3 is formed on the CCD camera 22 through the lens group 13, the objective lens 12, the mirror M ₁ , the beam splitter 16, the beam splitter 20, the mirror M ₂ , and the erector lens 21 in order. To do.
[0031]
In this reference example, coma aberration generated in the observation microscope 11 is corrected by a lens group 13 provided to be decentered from the optical axis S as will be described later. As a result, a good observation image of the AA mark 4 is formed on the CCD camera 22.
[0032]
On the other hand, the reference mark 17 is illuminated by condensing the light emitted from the light source 19 composed of the LED for illuminating the reference mark by the lens 18, and passes through the beam splitter 20 and the mirror M ₂ through the erector lens 21 and onto the CCD camera 22. Form an image.
[0033]
The position on the CCD camera 22 of the observation image of the AA mark 4 on the wafer 3 imaged on the CCD camera 22 is measured by a signal processing device (not shown) and connected to the CCD camera 22 measured by the signal processing device. An accurate position information of the XY stage 1 is obtained by comparing the position of the projected image of the reference mark 17 that is always fixed, thereby performing high-precision alignment.
[0034]
Next, the optical action of the lens group 13 for adjusting the coma aberration of this reference example will be described with reference to FIG.
[0035]
The lens group 13 of this reference example is configured such that a cemented color correction lens in which two lenses having different dispersion are cemented to correct chromatic aberration generated in the lens group 13 is decentered from the optical axis, and the color is formed on the detection surface 22. The coma aberration occurring in the entire observation microscope 11 can be corrected without causing the image shift due to.
[0036]
FIG. 2A shows a state where an image is formed on the detection surface by a microscope imaging lens. FIG. 2B shows a state in which one lens 13 is decentered from the optical axis. It shows a state in which color misregistration due to the so-called prism effect occurs.
[0037]
FIG. 2C shows a state in which an image is formed on the detection surface by the cemented color correction lens 13 in which two lenses having different dispersion are cemented to correct chromatic aberration.
[0038]
FIG. 2D shows that no image shift due to color occurs on the detection surface when the cemented color correction lens 13 of FIG. 2C is decentered from the optical axis.
[0039]
In the present reference example, coma aberration generated in the entire observation microscope 11 is corrected by forming the lens group 13 as described above, and an excellent AA mark 4 image is formed on the detection surface (the imaging surface of the CCD camera 22). doing.
[0040]
In this reference example, a non-exposure light having a central wavelength different from that of the exposure light from the halogen lamp and having a relatively wide wavelength width (for example, 633 ± 30 nm) is used, and a monochromatic light source such as a He—Ne laser is used. The interference fringes due to the resist film, which tend to occur when observing the AA mark on the wafer, are reduced, thereby achieving good alignment.
[0041]
FIG. 3 is a schematic view of the essential part of the optical system of Reference Example 2 when the present invention is applied to an exposure apparatus for manufacturing semiconductor elements. In FIG. 3, the same members as those shown in FIG.
[0042]
This reference example is different from the reference example 1 in FIG. 1 in that the AA mark 4 on the wafer 3 is observed using light through the projection lens 5, that is, alignment is performed by the TTL method. The difference is that the optical system 24 is used, and the other configurations are substantially the same.
[0043]
In FIG. 3, the optical system 24 is composed of a plane parallel plate for correcting aberration (for example, astigmatism) generated in the projection lens 5.
[0044]
In this reference example, the non-exposure light emitted from the halogen lamp 14 passes through the lens 15, the beam splitter 16, the lens group 13, the objective lens 12, the optical system 24, the mirror 23, and the projection lens system 5 in order. Illuminate.
[0045]
Observation image information of the AA mark 4 on the wafer 3 passes through the projection lens 5, the mirror 23, the optical system 24, the objective lens 12, the lens group 13, the beam splitter 16, the beam splitter 20, and the erector lens 21 and then onto the CCD camera 22. Form an image. At this time, since the projection lens system 5 projects the electronic circuit pattern drawn on the reticle 8 onto the wafer 3, the aberration is well corrected for the exposure light. For this reason, aberration occurs when non-exposure light passes through the projection lens 5.
[0046]
In this reference example, the spherical aberration and axial chromatic aberration generated in the projection lens system 5 are corrected by the objective lens 12, and the coma aberration is corrected by the lens group 13 that can be decentered from the optical axis. A good observation image of the AA mark 4 is formed on the CCD camera 22.
[0047]
On the other hand, the reference mark 17 is illuminated by condensing the light emitted from the LED light source 19 for illuminating the reference mark by the lens 18, and forms an image on the CCD camera 22 through the beam splitter 20 and the objective erector lens 21.
[0048]
The position on the CCD camera 22 of the observation image of the AA mark 4 on the wafer 3 imaged on the CCD camera 22 is measured by a signal processing device (not shown) and connected to the CCD camera 22 measured by the signal processing device. An accurate stage position information is obtained by comparing the position of the projected image of the fiducial mark 17 that is always fixed, and thereby performing high-precision alignment.
[0049]
As described above, in Reference Examples 1 and 2, when alignment is performed by observing the AA mark on the wafer with non-exposure light, an optical system element for correcting coma occurring in the entire observation microscope is used as a chromatic aberration. By constituting with the corrected optical system elements, image displacement due to color is prevented on the detection surface when coma aberration occurring in the entire observation microscope is corrected.
[0050]
This makes it possible to detect the alignment mark formed on the wafer surface when the film thickness of the resist coated on the wafer surface, the film thickness of various functional films used in semiconductor processes, the film thickness of the alignment mark formed on the wafer surface, etc. change. As the spectral characteristics of the signal change, the alignment error when the position of the image signal projected on the detection surface changes is reduced, and the alignment accuracy is improved.
[0051]
FIG. 4 is a schematic view of the essential part of the optical system of Example 1 when the present invention is applied to an exposure apparatus for manufacturing semiconductor elements. In FIG. 4, the same members as those shown in FIG.
[0052]
In this embodiment, as compared with Reference Example 1 in FIG. 1, an optical member 41 composed of at least two transparent wedge-shaped prisms is arranged in front of the CCD camera 22 as will be described later, and errors of each optical element of the observation microscope 11 and the like. Are different from each other in that the positional deviation of the AA mark image due to the color generated on the surface of the CCD camera 22 is corrected and the coma aberration correcting lens group 13 is omitted. The same.
[0053]
Next, the configuration of the present embodiment will be described in order, though partially overlapping with the description of FIG.
[0054]
In this embodiment, the non-exposure light emitted from the halogen lamp 14 sequentially illuminates the AA mark 4 on the wafer 3 through the lens 15, the beam splitter 16, the mirror M ₁ , and the objective lens 12.
[0055]
Observation image information of the AA mark 4 on the wafer 3 is sequentially formed on the CCD camera 22 through the objective lens 12, the mirror M ₁ , the beam splitter 16, the beam splitter 20, the mirror M ₂ , the erector lens 21, and the optical member 41. .
[0056]
On the other hand, the reference mark 17 is illuminated by condensing the light emitted from the LED light source 19 for illuminating the reference mark by the lens 18, and forms an image on the CCD camera 22 through the beam splitter 20, the mirror M ₂ , and the objective erector lens 21. To do.
[0057]
The position on the CCD camera 22 of the observation image of the AA mark 4 on the wafer 3 imaged on the CCD camera 22 is measured by a signal processing device (not shown) and connected to the CCD camera 22 measured by the signal processing device. An accurate stage position information is obtained by comparing the position of the projected image of the fiducial mark 17 that is always fixed, and thereby performing high-precision alignment.
[0058]
In this example, as in Reference Example 1, a light source (for example, 633 ± 30 nm) having a center wavelength different from the wavelength of exposure light from a halogen lamp as non-exposure light and having a relatively wide wavelength width is used, and a He-Ne laser is used. The interference fringes due to the resist film, which tend to occur when observing the AA mark on the wafer using a simple monochromatic light source, are reduced, thereby achieving good alignment.
[0059]
Next, the optical action of the optical member 41 of the present embodiment will be described with reference to FIG.
[0060]
In this embodiment, the optical member 41 uses two wedge plates 41a and 41b to correct the positional deviation of the projected image due to the color caused by the error of the optical system element of the observation microscope system 11.
[0061]
FIG. 5A shows a state in which color misregistration occurs due to the so-called prism effect of one wedge plate 51.
[0062]
FIG. 5B shows how the projected image is displaced due to colors generated due to errors in the optical system elements of the observation microscope system 11.
[0063]
FIG. 5 (C) uses two wedge plates 41a and 41b to capture the positional deviation of the projected image shown in FIG. 5 (B) with the light rays λ ₁ and λ ₂ in FIG. 5 (C). Corrected by arranging and correcting at the position where the light beam condensed at one point is converging on the surface (CCD camera 22), by adjusting the setting angle of the two wedge plates 41a and 41b In addition, it is possible to correct the positional deviation of the projected image due to the color generated.
[0064]
6 and 7 are explanatory diagrams relating to a part of the optical member 41 according to the second and third embodiments of the present invention.
[0065]
In the second and third embodiments, the configuration of the optical member 41 is different from that of the first embodiment in FIG. 4, and the other configurations are the same.
[0066]
In Example 2 of FIG. 6, two parallel flat plates 41a and 41b obtained by joining two wedge plates 41a1 and 41a2 (41b1 and 41b2) having different dispersions are used as the optical member 41, and the optical of the observation microscope 11 shown in FIG. The positional deviation of the projected image (AA mark image) due to the color caused by the system element error or the like is corrected.
[0067]
In this embodiment, the set angles of the two sets of wedge plates are adjusted so that the misalignment of the projected image due to the color generated in an arbitrary direction and size can be corrected. In particular, in this embodiment, the refractive index is the same at a certain wavelength (for example, the center wavelength λ ₀ ) among the illumination wavelengths used for alignment of the glass materials constituting the two wedge plates 41a1, 41a2 (41b1, 41b2) having different dispersions. If the dispersion is different, the two wedge plates do not have refractive power with respect to the wavelength λ ₀ , so when the wedge plate is inserted in the optical path in order to correct the positional deviation of the projected image due to color. The optical axis of the observation image formed on the CCD camera 22 does not change.
[0068]
In Example 3 of FIG. 7, as the optical member 41, an optical member 41 in which two lenses 41c and 41d made of materials having different dispersions are joined to form a plane-parallel plate as a whole is shown. Further, the positional deviation of the projected image due to the color caused by the error of the optical system element of the observation microscope system 11 is corrected.
[0069]
In this embodiment, the decentering direction and the decentering amount of the lens are adjusted so that the positional deviation of the projected image due to the color generated in an arbitrary direction and size can be corrected.
[0070]
In particular, in the present embodiment, the glass material constituting the two lenses 41c and 41d made of materials having different dispersions has the same refractive index and dispersion at a certain wavelength (for example, the center wavelength λ ₀ ) among the illumination wavelengths used for alignment. If they are different from each other, they have no refractive power with respect to the two lens wavelengths λ ₀ , so when the lens is inserted in the optical path in order to correct the displacement of the projected image due to the color, There is a feature that the optical axis of the observation image formed on the lens does not change.
[0071]
FIG. 8 is a schematic view of the essential portions of the optical system of Example 4 when the present invention is applied to an exposure apparatus for manufacturing semiconductor elements. In FIG. 8, the same members as those shown in FIG.
[0072]
This embodiment is different from the first embodiment in FIG. 4 in that the AA mark 4 on the wafer 3 is observed using light through the projection lens 5, that is, alignment is performed by the TTL method. The other structure is substantially the same.
[0073]
In this embodiment, the non-exposure light emitted from the halogen lamp 14 sequentially illuminates the AA mark 4 on the wafer 3 through the lens 15, the beam splitter 16, the objective lens 12, the mirror M ₁ , and the projection lens system 5.
[0074]
Observation image information of the AA mark 4 on the wafer 3 is sequentially formed on the CCD camera 22 through the projection lens 5, the mirror M ₁ , the objective lens 12, the beam splitter 16, the beam splitter 20, the erector lens 21, and the optical member 41. .
[0075]
On the other hand, the reference mark 17 is illuminated by condensing the light emitted from the LED light source 19 for illuminating the reference mark by the lens 18, and forms an image on the CCD camera 22 through the beam splitter 20, the objective erector lens 21, and the optical member 41. To do.
[0076]
The position on the CCD camera 22 of the observation image of the AA mark 4 on the wafer 3 imaged on the CCD camera 22 is measured by a signal processing device (not shown) and connected to the CCD camera 22 measured by the signal processing device. An accurate stage position information is obtained by comparing the position of the projected image of the fiducial mark 17 that is always fixed, and thereby performing high-precision alignment.
[0077]
As described above, in the first to fourth embodiments, the wafer includes the optical member that corrects the image shift caused by the color generated on the detection surface when the alignment is performed by observing the AA mark on the wafer surface with the non-exposure light. When the resist coated on the surface, various functional films used in semiconductor processes, or the film thickness of the alignment mark formed on the wafer surface change, along with the change in the spectral characteristics of the alignment mark detection signal formed on the wafer surface The alignment error when the position of the image signal projected on the detection surface changes is reduced, and the alignment accuracy is improved.
[0078]
【The invention's effect】
According to the present invention, by setting each element as described above, the position of the mark image is accurately detected when detecting the mark via the projection lens system with the detection light (alignment light) having a wavelength different from that of the exposure light. It is possible to achieve an exposure apparatus having an improved mark detection function that can be detected at once, and a semiconductor chip manufacturing method using the exposure apparatus.
[Brief description of the drawings]
FIG. 1 is a schematic view of the essential part of an optical system of Reference Example 1 of an exposure apparatus of the present invention. FIG. 2 is an explanatory diagram of an embodiment for correcting coma aberration of the observation microscope of FIG. FIG. 4 is a schematic diagram of the main part of the optical system of Example 1 of the exposure apparatus of the present invention. FIG. 5 is a diagram showing the positional deviation of the AA mark image due to the color of FIG. FIG. 6 is an explanatory diagram showing correction of misregistration of the AA mark image by the color of FIG. 4. FIG. 7 is an explanatory diagram showing correction of misalignment of the AA mark image by the color of FIG. FIG. 9 is a schematic diagram of the main part of the optical system of Example 4 of the exposure apparatus of the present invention. FIG. 9 is an explanatory view of the positional deviation of the AA mark image by color in a conventional apparatus. Illustration [Explanation of symbols]
1 XY stage 2 θ stage 3 Wafer 4 Alignment mark (AA mark) on the wafer
5 Projection lens 6 Bar mirror 7 Laser interferometer 8 that measures the position of the XY stage Reticle 9 Exposure illumination system 10 Reticle stage 11 Optical system 12 that corrects the positional deviation of the projected image due to color 12 Objective lens 13 On the wafer by non-exposure light Observation optical system for observing the AA mark 14 Halogen lamp light source 15 for illumination 15 Illumination lens 16 Beam splitter 17 for illumination Reference mark 18 Lens for illumination of reference mark 19 LED light source 20 for illumination of reference mark Beam for reference mark Splitter 21 Elector lens 22 CCD camera

Claims (6)

A projection optical system that projects a pattern of the first object onto the second object with exposure light, and detection light having a plurality of wavelengths in order to perform relative alignment between the first object and the second object. An exposure apparatus having a detection unit that illuminates a second object and detects mark information on the second object,
The detection means includes two lenses made of materials having different dispersions for correcting the deviation of the mark image between the plurality of wavelengths generated on the detection surface, and a position where a light beam focused on the detection surface is in a converged state. An exposure apparatus characterized in that it can be eccentrically provided. The exposure apparatus according to claim 1 , wherein the detection light is light having a wavelength different from that of the exposure light. The exposure apparatus according to claim 1 , wherein the detection light is light that does not sensitize the second object. An apparatus according to claim 1, 2 or 3 in which the light source of the detection light, characterized in that a halogen lamp. The exposure apparatus according to claim 1, wherein said two lenses made of different material having dispersed are bonded to each other. Using the exposure apparatus according to claim 1 to 5 any one of claims, by projecting an image of the circuit pattern via a projection optical system by illuminating the circuit pattern of the first object onto the second object A method of manufacturing a semiconductor chip, comprising transferring.

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