JP3656307B2 - Hybrid integrated circuit device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a hybrid integrated circuit device in which a conductor exposed on a thick film substrate and an electrode of a semiconductor element are soldered, and a method for manufacturing the same.
[0002]
[Prior art]
FIG. 7 shows a configuration of a conventional hybrid integrated circuit device. (A) is a cross-sectional block diagram, (b) is a top view which shows the state before soldering the semiconductor chip as a semiconductor element to a thick film board | substrate.
The hybrid integrated circuit device screen-prints a plurality of conductors 2 on the thick film substrate 1, screen-prints a protective glass 3 as an insulating film on the thick film substrate 1 so that a part of the conductor 2 is exposed, The exposed conductor 2 is configured by soldering an electrode 5 (having a surface covered with solder) of a rectangular semiconductor chip 4.
[0003]
As shown in FIG. 7B, the protective glass 3 is formed with an opening 6 so that a partial region 2a (hereinafter referred to as a conductor land) 2a of the conductor 2 is exposed. The electrode 5 of the semiconductor chip 4 is soldered to 2a. In addition, in FIG.7 (b), the formation area of the protective glass 3 is shown by hatching.
[0004]
[Problems to be solved by the invention]
In the above-described conventional one, the conductor land 2 a is formed by dividing one place in the longitudinal direction of the conductor 2 with the protective glass 3.
In this case, if there is no mask alignment deviation between the conductor 2 and the protective glass 3, the area of all the conductor lands 2a can be made uniform, and the electrodes 5 of the semiconductor chip 4 can be soldered well.
[0005]
However, if mask misalignment between the conductor 2 and the protective glass 3 occurs, the area of the conductor land 2a is not constant. For example, as shown in FIG. 8B, when the protective glass 3 is formed to be shifted to the right side of the drawing, the exposure distances a and b are different, and the areas of the left and right conductor lands 2a are not uniform. For this reason, the solder height supplied on the conductor land 2a becomes non-uniform, and the semiconductor chip 4 cannot be assembled properly as shown in FIG. In some cases, problems such as opening of the electrode 5 and short-circuiting between the conductor lands 2a due to solder crushing may occur.
[0006]
In particular, in recent years, the number of electrodes of the semiconductor chip 4 has increased due to the high integration and integration of ICs. When the electrode size of the semiconductor chip 4 and the conductor lands 2a are miniaturized, the above-described problems have occurred. Become prominent.
The present invention has been made in view of the above problems, and an object of the present invention is to make the area of a conductor land constant even if a positional deviation occurs between a conductor and an insulating film.
[0007]
[Means for Solving the Problems]
To achieve the above object, in the invention according to claims 1 to 1 3, the insulating film (3), an opening for exposing a portion of the conductor (2) (7,7a~7d, 7e~ 7r) and is formed so that both ends of the opening are positioned on the conductor in the longitudinal direction of the strip-shaped conductor , and the insulating film has a thickness in a region where the semiconductor element (4) is positioned above. The film substrate (1) is formed so as to be exposed, and a space for inserting a molding material is secured between the semiconductor element and the thick film substrate .
[0008]
Therefore, even if a positional deviation occurs between the insulating film and the longitudinal direction of the conductor, the distance between both ends of the opening is constant, so that the area of the conductor land can be made constant. As a result, the semiconductor element can be properly mounted. In addition, an insulating film is formed so that the thick film substrate is exposed in a region where the semiconductor element is located at the top, and a space for placing a molding material is secured between the semiconductor element and the thick film substrate. Intrusion of the molding material at the time of molding can be facilitated. As in the invention described in claim 11, four openings (7a to 7d) are formed separately for each conductor group (A to D), and a conductor is formed at each corner. For example, a conductor land can be appropriately formed even in a semiconductor element having an electrode at a corner.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
(First embodiment)
FIG. 1A shows a cross-sectional configuration of the hybrid integrated circuit device according to the first embodiment, and FIG. 1B shows a plan configuration before the semiconductor chip is soldered to the thick film substrate.
A plurality of strip-shaped conductors 2 arranged in parallel are formed on the thick film substrate 1, and they constitute first to fourth conductor groups A to D that form a positional relationship of four sides of a quadrangle. Yes. Here, the opening portion of the protective glass 3 for forming the conductor land 2a is different from the conventional opening portion 6 shown in FIG. 7, as shown in FIG. 1B, the first to fourth conductor groups. One frame-shaped opening 7 is formed so as to cross each of A to D.
[0011]
Since both ends of the opening 7 are positioned on the conductor 2 in the longitudinal direction of the respective conductors 2, both ends of the opening 7 are connected to the conductor 2 even if the opening 7 is displaced in the vertical and horizontal directions with respect to the conductor 2. As long as it is located above, the area of the conductor land 2a is constant.
The conductor 2 and the protective glass 3 have a printing misalignment, and there is a mask alignment misalignment between the conductor 2 and the protective glass 3, but when the former is α μm and the latter is ± β μm, the end of the conductor 2 If the distance between the portion and the end of the opening 7 (d shown in FIG. (B)) is set to be not less than α + β μm, the conductor is not affected even if the maximum deviation occurs as shown in FIG. Since the both ends of the opening 7 can be positioned on 1, the area of the conductor land 2a can be made constant.
[0012]
Accordingly, the semiconductor chip 4 can be properly assembled with the solder height supplied onto the conductor land 2a being uniform.
Next, a method for manufacturing a hybrid integrated circuit device according to this embodiment will be described with reference to FIG.
[Conductor printing process in FIG. 3 (a)]
A printing mask 10 is placed on the thick film conductor 1 and the conductor paste 11 is screen-printed using a squeegee 12 to form a conductor 2 having a thickness of about 10 μm.
[Firing / Drying Process in FIG. 3B]
The thick film conductor 1 on which the conductor 2 is printed is fired and dried.
[Resistance printing / firing / drying process of FIG. 3 (c)]
A resistor 13 forming a part of the hybrid integrated circuit is printed between the desired conductors 2 and then baked and dried.
[Protective glass printing process of FIG. 3 (d)]
The printing mask 14 is installed, and the glass paste 15 is screen-printed using the squeegee 16 to form the protective glass 3 having a thickness of about 15 μm. In this case, a printing mask 14 having a protective glass 3 forming pattern as shown in FIG.
[Firing / Drying Process of FIG. 3 (e)]
The thick film conductor 1 on which the protective glass 3 is formed is fired and dried.
[Solder printing process in FIG. 3 (f)]
A printing mask 17 is installed, and solder paste 18 is screen-printed using a squeegee 19 to form solder 20 on the conductor land 2a.
[Element assembly process in FIG. 3 (g)]
The electrode 5 of the semiconductor chip 4 is positioned and soldered to the solder 20 on the conductor land 2a.
(Second Embodiment)
When the size of the semiconductor chip 4 is small and the electrodes 5 are also present at the corners, the formation pattern of the conductors 2 is set so that the conductors 2 are present at the corners as shown in FIG. The openings are referred to as openings 7a to 7d divided corresponding to the first to fourth conductor groups A to D, respectively.
[0013]
In this case, the four openings 7a to 7d are in a quadrangular positional relationship, and the conductor 2 exists at each corner.
Therefore, also in this embodiment, the area of the conductor land 2a can be made constant by each opening.
(Third embodiment)
In the first embodiment described above, the protective glass 3 is formed between the semiconductor chip 4 and the thick film substrate 1. In this way, when the semiconductor chip 4 is mounted and then resin-molded, There is a possibility that the molding material will not easily enter between the semiconductor chip 4 and the thick film substrate 1.
[0014]
Therefore, in this embodiment, as shown in FIG. 5, the thick film conductor 1 is exposed without forming the protective glass 3 in the region 8 where the semiconductor chip 4 is located in the upper part. Therefore, since a space is secured between the semiconductor chip 4 and the thick film substrate 1, the molding material can be easily put between the semiconductor chip 4 and the thick film substrate 1.
(Fourth embodiment)
In the above-described various embodiments, the openings are formed in the conductor group. However, as shown in FIG. 6, the openings 7 e to 7 r may be formed in the individual conductors 2. Good. In this case, even if mask misalignment occurs between the conductor 2 and the protective glass 3 in the vertical and horizontal directions, both ends of the opening 3a are located in the longitudinal direction and the width direction of the conductor 2, so that the area of the conductor land 2a is Can be constant.
[0015]
The opening in this embodiment is not limited to a square as shown in the figure, and may be a polygon other than that, or a circle.
In contrast to this embodiment, the protective glass 3 may not be formed in the region 8 in which the semiconductor chip 4 is located at the top as in the third embodiment.
In the above-described various embodiments, the thick film substrate 1 is not limited to a single layer substrate, but a thick film double layer substrate in which the lower and upper conductors are formed via an insulating film, and what the conductor is inside. It may be a multilayer substrate on which layers are also formed.
[0016]
Further, as the insulating film formed on the conductor, insulating glass can be used in addition to the protective glass.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a hybrid integrated circuit device according to a first embodiment of the present invention.
FIG. 2 is a diagram showing a state where a positional deviation occurs between a conductor 2 and a protective glass 3 in the one shown in FIG.
FIG. 3 is a process diagram showing a manufacturing process of the hybrid integrated circuit device shown in FIG. 1;
FIG. 4 is a diagram showing a second embodiment of the present invention.
FIG. 5 is a diagram showing a third embodiment of the present invention.
FIG. 6 is a diagram showing a fourth embodiment of the present invention.
FIG. 7 is a diagram showing a configuration of a conventional hybrid integrated circuit device.
8 is a diagram for explaining a problem when a positional deviation occurs between the conductor 2 and the protective glass 3 in the one shown in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Thick film board | substrate, 2 ... Conductor, 3 ... Protective glass, 4 ... Semiconductor chip, 5 ... Electrode,
7, 7a-7d, 7e-7r ... opening.

Claims (14)

A thick film substrate (1), a strip-shaped conductor (2) formed on the thick film substrate, and an insulating film (3) formed on the thick film substrate so that a part of the conductor is exposed. In a hybrid integrated circuit device having a semiconductor element (4) with an electrode (5) soldered on the exposed conductor,
The insulating film has openings (7, 7a to 7d, 7e to 7r) for exposing a part of the conductor, and both ends of the opening on the conductor in the longitudinal direction of the strip-shaped conductor. Is formed to be located,
Further, the insulating film is formed so that the thick film substrate is exposed in a region where the semiconductor element is located above, and a space for inserting a molding material is secured between the semiconductor element and the thick film substrate. A hybrid integrated circuit device.   A plurality of the strip-shaped conductors are arranged in parallel on the thick film substrate, and openings (7, 7a to 7d) of the insulating film are formed so as to cross the strip-shaped conductors. The hybrid integrated circuit device according to claim 1. It said opening (7e~7r) also in the width direction of the conductor has two ends, and wherein the insulating film is formed so as to both ends of the width direction is positioned on the conductor The hybrid integrated circuit device according to claim 1 . On the thick film substrate, the strip-shaped conductors are spaced apart from each other in the longitudinal direction, and the openings (7, 7a to 7d, 7e to 7r) are provided in the respective strip-shaped conductors that are disposed to face each other. hybrid integrated circuit device according to any one of claims 1 to 3, characterized in that There are formed. A thick film substrate (1);
A first conductor group (A (or B)) composed of a plurality of strip-like conductors (2) arranged in parallel on the thick film substrate;
A second conductor group (C (or D)) composed of a plurality of strip-shaped conductors arranged in parallel and spaced apart from the first conductor group on the thick film substrate;
An insulating film (3) formed on the thick film substrate so that a part of each of the conductors is exposed;
A semiconductor element (4) soldered with an electrode (5) on the exposed conductor;
The insulating film has openings (7, 7a to 7d, 7e to 7r) for exposing a part of the respective conductors, and the openings are arranged in the longitudinal direction of the conductors on the respective conductors. In which both ends are located ,
Further, the insulating film is formed so that the thick film substrate is exposed in a region where the semiconductor element is located above, and a space for inserting a molding material is secured between the semiconductor element and the thick film substrate. hybrid integrated circuit device characterized by being.   The opening (7) has a frame shape and is formed so that one side thereof crosses the first conductor group and the other side crosses the second conductor group. The hybrid integrated circuit device according to claim 5, characterized in that:   The opening includes a first opening (7a (or 7b)) formed so as to cross the first conductor group, and a second opening formed so as to cross the second conductor group. The hybrid integrated circuit device according to claim 5, wherein (7c (or 7d)) is included. A thick film substrate (1);
On the thick film substrate, first to fourth conductor groups (A to D) formed of a plurality of strip-shaped conductors (2) formed in a positional relationship of four sides of a quadrangle and arranged in parallel on each side; ,
An insulating film (3) formed on the thick film substrate so that a part of each of the conductors is exposed;
A semiconductor element (4) soldered with an electrode (5) on the exposed conductor;
The insulating film has openings (7, 7a to 7d, 7e to 7r) for exposing a part of the respective conductors, and the openings are arranged in the longitudinal direction of the conductors on the respective conductors. In which both ends are located ,
Further, the insulating film is formed so that the thick film substrate is exposed in a region where the semiconductor element is located above, and a space for inserting a molding material is secured between the semiconductor element and the thick film substrate. hybrid integrated circuit device characterized by being.   9. The hybrid integrated circuit device according to claim 8, wherein the opening includes one opening formed so as to cross the first to fourth conductor groups.   9. The hybrid integrated circuit device according to claim 8, wherein the opening is composed of four openings (7a to 7d) formed separately for each conductor group of the first to fourth conductor groups. .   11. The four openings are in a quadrilateral four-sided positional relationship, and a conductor belonging to any of the first to fourth groups is formed at each corner. Hybrid integrated circuit device.   9. The hybrid integrated circuit device according to claim 5, wherein the openings (7 e to 7 r) are polygonal having both ends in the longitudinal direction and the width direction of the conductors on the respective conductors. 9. .   9. The hybrid integrated circuit device according to claim 5, wherein the openings (7e to 7r) are circular ones formed so as to be located on the respective conductors. A conductor (2) is printed on the thick film substrate (1), an insulating film (3) is printed on the thick film substrate so that a part of the conductor is exposed, and a semiconductor element is formed on the exposed conductor. In the method of manufacturing a hybrid integrated circuit device in which the electrode (5) of (4) is soldered,
Wherein an insulating film, as well as longitudinal direction with both ends on the conductor in the opening formed of the conductor, and formed so that the thick film substrate in a region where the semiconductor element to the upper position exposing said semiconductor A method for manufacturing a hybrid integrated circuit device, wherein a space for placing a molding material is secured between an element and the thick film substrate .

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