JP3435304B2 - Liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] TECHNICAL FIELD OF THE INVENTIONBookThe invention relates to a liquid crystal display device.
You. [0002] 2. Description of the Related Art Light energy is converted to electrical energy.
Solar cells are clean energy sources,
Due to concerns over the depletion of fossil energy, new
It is attracting attention as a new energy. [0003] To promote a wide range of practical use of solar cells
Is to reduce the cost of power generation.
is there. That is, the cost for manufacturing the solar cell,
The balance with the photoelectric conversion efficiency is a problem. amorphous
Solar cells using silicon (a-Si) are crystalline silicon
Significantly reduce manufacturing costs compared to using
And it is possible to use
It can be manufactured by product. Such manufacturing cost and productivity
A-Si now has advantages in terms of
Solar cells are widely used. However, a-Si
The photoelectric conversion efficiency of solar cells using
The problem is about 50% lower than the used solar cell
Therefore, improvement in photoelectric conversion efficiency is desired. FIG. 11 schematically shows the structure of a typical solar cell.
FIG. This solar cell is sequentially formed on a substrate 91,
First electrode 92, p-type semiconductor layer 93, i-type semiconductor layer 9
4. An n-type semiconductor layer 95 and a second electrode 96 are stacked and formed.
It is a thing. The substrate 91 is made of glass, plastic, or the like.
An insulating substrate transparent to visible light is used. First
For example, ITO (Ι) capable of transmitting visible light
Conductivity using Ndulmin Tin Oxide)
A transparent material is used. As the p-type semiconductor layer 93,
For example, doping a semiconductor layer made of a-Si with boron
Used, and as the Ν-type semiconductor 95, for example, from a-Si
The semiconductor layer to be used is doped with phosphorus. i-type semiconductor layer
14 uses an undoped a-Si semiconductor layer, etc.
Can be. When light is incident from the direction of the substrate 91, the light enters
Carriers are excited at the pin junction by the emitted light,
A potential difference is generated between the first electrode 92 and the second electrode 96.
You. That is, when light enters, the incident light causes p
Valence band electrons at the in-junction are excited by light energy
I do. Light energy sufficient to excite electrons and exceed the bandgap
When energy is given, the electrons rise to the conduction band,
Hole pairs are generated. In the vicinity of the junction, keys such as electrons and holes
Carrier diffuses into the other party's area, creating a depletion layer.
Here, a space charge layer is formed. Depleted by light irradiation
The electrons generated in the layer are n
Holes accumulate in the p-type region while holes collect in the p-type region
Between the n-type semiconductor layer 95 and the p-type semiconductor layer 93
A difference occurs. [0006] Between the first electrode 92 and the second electrode 96
In order to increase the generated potential difference,
The problem is whether it can be collected efficiently at the junction. From this perspective
Considering that, the structure of a conventional solar cell is
Light is collected using only one side,
This is one of the major reasons for lowering the conversion efficiency. On the other hand, a solar cell is a light power source.
From many portable electronic devices, information terminals, etc.
You. Therefore, it is necessary to form various shapes of solar cells
Is an important issue in expanding the range of applicable products.
You. In order to realize the light weight and arbitrary shape of the solar cell,
A stick substrate may be used. As the substrate 91,
Using materials with high elasticity such as plastic substrates
Can be deformed only within the range of elasticity of the substrate 91.
However, there is a problem in giving the solar cell shape an arbitrary shape.
is there. Further, when a plastic substrate is used,
Has low heat resistance, so it is necessary to lower the manufacturing process temperature
Not only adversely affects the film quality of the semiconductor, but also
The problem is that the flexibility of the manufacturing process and the productivity
is there. In addition to the semiconductor film formation process, transparent conductive
It is necessary to limit the film forming temperature of the conductive film. This
To realize the light weight and arbitrary shape of the solar cell
Require that the process temperature be sacrificed.
There is a title. Furthermore, it can be manufactured in a large area.
Is one feature of a solar cell using a-Si.
However, the area that can be manufactured is the same as that of a film forming apparatus that forms a-Si.
Depends on the size. It is also important for realizing a large area
Is the uniformity of the film. As the film forming equipment becomes larger,
It is difficult to ensure the uniformity of the pattern. In this sense,
Increasing the area of the solar cell is highly dependent on the film forming apparatus. Desired
In order to get the area, you have to stick together,
By adding a resistance component due to lamination,
There is a problem that power loss increases. [0010] [0011][Problems to be solved by the invention] The present invention provides such
This was done to solve the problem. Sand
That is, the present invention Equipped with a thin transistor for electrical connection
Defects can be suppressed, and the ratio of the effective display area
To provide a liquid crystal display device capable of increasing
With the goal. [0012] [0013] [Means for Solving the Problems] To solve such problems.
Therefore, the liquid crystal display device of the present invention has the following features.
have. The liquid crystal display device of the present inventionConductive metal
The semiconductor layer and the contact layer cover the
The gate insulating film and the half are formed so as to be formed at equal intervals for each pole.
A conductor layer and the contact layer are sequentially laminated,
Source and drain electrodes are formed to cover the layers.
Metal lines having a plurality of thin transistors,
A liquid crystal display device having an embedded array substrate,
A peripheral substrate provided around the array substrate;
The metal wire of the thin transistor provided on the side substrate
And connection pads to which are connectedCharacterized by
Liquid crystal display. [0014] [0015] [0016] [0017] [0018] [0019] [0020] [0021] [0022] [0023] [0024] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail.
Will be described. (Embodiment 1) FIG. 1 shows a photoelectric conversion element of the present invention.
FIG. 2 schematically shows the structure of the photoelectric conversion device.
It is a figure which shows the cross-section of an element schematically. With the first electrode
An n-type semiconductor 12 and an i-type semiconductor with an electrode 11 as a central axis
The body 13 and the p-type semiconductor 14 are sequentially stacked, and a second
A transparent electrode 15, which is an electrode, is formed on the outer periphery. This
When light is irradiated on the photoelectric conversion element 10 of the
A potential difference occurs between the bright electrodes 15. The electrode 11 is made of a linear material
It can be used for solar cells etc.
The photoelectric conversion element 10 that can be formed into a linear shape (cable shape)
Can be The sectional structure of the photoelectric conversion element 10 of the present invention is an example.
For example, as illustrated in FIG.
It does not need to be formed in a circular shape, and may be an elliptical shape.
An irregular closed curve may be used. Each with the electrode 11 as the central axis
It suffices that the semiconductor film of (1) covers another film. For example, the n-type semiconductor 12 covers the electrode 11
However, at this time, the center of the electrode 11
On the other hand, it is not necessary to form the n-type semiconductor 12 concentrically.
No. Similarly, the i-type semiconductor 13 covers the n-type semiconductor 12.
Also, the p-type semiconductor 14 covers the i-type semiconductor 13
Also in this case, it is formed concentrically with the center of the electrode 11.
No need. Importantly, as shown in FIGS. 1 and 2,
Each semiconductor film forms another semiconductor film or electrode on the inner layer side.
It is to cover. In addition, each semiconductor layer, the second electrode layer
May be formed as needed. Figure
In one example, the thickness of the n-type semiconductor 12 is about 10 to 100 n
The thickness of the m, i-type semiconductor 13 is about 0.1 to 1 μm,
The thickness of the conductor 14 is about 10 to 100 nm,
The thickness of the second electrode 15 is about 75 nm to 1 μm.
You. The photoelectric conversion of the present invention having such a configuration
The element 10 has a light receiving surface formed over the entire circumference,
Light can be efficiently collected, and the first electrode 11 and the
A potential difference Vout is generated between the first electrode 15 and the second electrode 15 by the photoelectric effect.
Can live. FIG. 3 shows a photoelectric conversion element
It is a figure which shows the example applied to the positive battery. Also the firstofelectrode1
1In the shape of a product to which the photoelectric conversion element of the present invention is applied.
In addition, it can be processed into a desired shape. As shown in FIG.
First electrode compared to conventional solar cell11In the center of
Uses incident light from a wide angle over 360 °
To substantially improve the photoelectric conversion efficiency.
Can be made. The photoelectric conversion element of the present invention has a large area.
Can be easily performed, for example,BigArea sun
Batteries and the like can be easily manufactured. Also, metal
Which can be formed around wire made of conductive material
Therefore, it can be formed more flexibly. Ma
In manufacturing, conventional glass and plastic substrates
Compared to forming a semiconductor layer on top,
Extremely low temperature conditions and increased productivity
be able to. (Embodiment 2) FIG. 4 shows a photoelectric conversion element of the present invention.
It is a figure showing another example of a child structure. FIG. 1 and FIG.
Similarly to the photoelectric conversion device of the present invention, the first electrode
N-type semiconductor layer 12 and i-type semiconductor layer with pole 11 as a central axis
13, a p-type semiconductor layer 14 is sequentially stacked. The photoelectric conversion device of the present invention illustrated in FIG.
The second electrode 15 covering the outer peripheral portion is made of a transparent conductive material such as ITO.
Although an electroconductive film was formed, the photoelectric conversion element illustrated in FIG.
Let's wrap a linear conductive material in a spiral shape.
Thus, the second electrode 15b is formed. In such a configuration, the second electrode 15b and
Therefore, it is not always necessary to use a translucent material.
The second electrode 15b may be formed of a transparent metal material.
No. Further, the second electrode 15b is formed without using a film forming process.
Because it can be formed, productivity is greatly improved and light
The manufacturing cost of the electric conversion element can be reduced. this
This means that costs for power generation, such as solar cells, are low.
This is particularly effective when reduction is an issue. (Embodiment 3) FIG. 5 shows a photoelectric conversion element of the present invention.
It is sectional drawing which shows another example of the structure of a child | child roughly. this
The photoelectric conversion element includes an outermost semiconductor layer (here, a p-type semiconductor layer).
Between the body layer 14) and the second electrode 15 made of ITO,
A thin silicon oxide film 16 is formed as an anti-reflection film.
I have. Such an antireflection film 16 is made of, for example, plasma C
The n-type semiconductor layer 12 and the i-type semiconductor layer 1 are formed by a VD method or the like.
3, can be formed in the same manner as the p-type semiconductor layer 14,
Alternatively, the film may be formed continuously with the semiconductor layer. The provision of such an antireflection film 16
In addition, the so-called reflection loss is reduced, and the photoelectric conversion efficiency is further improved.
Can be increased. Further, an example of the anti-reflection film 16 is shown in FIG.
If applied to the photoelectric conversion element of the present invention shown, for example, p-type
Also functions as a protective film for outer semiconductor layers such as semiconductor layer 14
Can be done. In the structure illustrated in FIG.
The layer is not completely covered by the second electrode 15
Therefore, the function of the photoelectric conversion element is
Damage can be prevented. Such anti
If the anti-irradiation film 16 is formed of a silicon nitride film, it is a protective film.
Performance is further improved, e.g.
Can be further improved. (Embodiment 4) FIG. 6 shows the structure of the photoelectric conversion element of the present invention.
It is a figure which shows another example further roughly. This photoelectric conversion element
The transparent electrode 15a made of ITO is used as the second electrode.
And a spiral electrode 15b made of a metal material
I have. Although ITO is a conductive material, it is a common material.
Compared with metal materials used for body wiring, its resistance is
It is slightly higher. Therefore, the transparent electrode 1 made of ITO
5a and a spiral electrode 15b made of a metal material.
By adopting the combined second electrode, photoelectric conversion
While minimizing the reduction of light incident on the junction surface of the element
Thus, the resistance of the second electrode formed on the outer peripheral portion of the semiconductor layer is reduced.
Can be frustrated. Such a photoelectric conversion element is, for example, a p-type
After forming an outer semiconductor layer such as the conductor layer 14, Cu
Around the conductor wiring, and deposit ITO on it.
Or a half of the outer layer such as the p-type semiconductor layer 14.
An ITO film is further formed on the conductor layer, and Cu or the like is
May be wound. (Embodiment 5) Next, the photoelectric conversion element of the present invention
An example of a method for manufacturing a child will be described. FIG. 7 shows the light of the present invention.
FIG. 7 is a diagram for explaining an example of a method for manufacturing a photoelectric conversion element.
is there. The photoelectric conversion element according to the present invention has the first electrode 11
Around the center of a linear conductive material
Number of semiconductor layers are stacked to form a diode.
Formed. A linear conductive material used as the first electrode 11
The material is, for example, Cu, Al, W, Ta, Au having low resistance.
Etc. may be used. These are just examples, other
May be used. Ma
At this point, the light of the present invention, for example, the shape of a solar cell,
Even if it is deformed according to the shape of the product to which the
Good. For example, using a solar cell in a greatly bent shape
If you want, make sure you have the desired shape at this point.
(FIG. 7A). Next, with respect to the first electrode 11, FIG.
2, the n-type semiconductor layer 12, the i-type semiconductor layer
13, a p-type semiconductor layer 14, a second layer made of a transparent conductive material.
Are sequentially laminated and coated (FIG. 7B).
FIG. 7 (e). an n-type semiconductor 12, an i-type semiconductor 13, and
As the p-type semiconductor 14, for example, a-Si (amorphous
Using a semiconductor layer based on
Is also good. As a method of depositing a-Si, for example,
Using chemical vapor deposition (PECVD) method with zuma excitation
You may make it. And as the n-type semiconductor layer 12,
For example, using an a-Si semiconductor layer doped with phosphorus,
As the semiconductor layer 14, for example, boron-doped a-S
An i-semiconductor layer may be used. In addition, the second
The pole 15 is transparent to visible light such as
A transparent conductive film may be used. Accordingly
The conventional method of manufacturing semiconductors and thin film transistors
Manufacture the photoelectric conversion element of the present invention without major changes
can do. In addition, the present invention uses a glass
Semiconductor layers on substrates such as plastic and plastic
Configuration, the temperature conditions of the manufacturing process
It becomes very small and productivity can be improved. (Embodiment 6) Next, the photoelectric conversion element of the present invention
A solar cell configured by combining multiple
You. FIG. 8 shows the above-described photoelectric conversion element 10 of the present invention.
Area as a unit element to obtain a larger electromotive force.
FIG. 2 is a diagram schematically showing a configuration of a solar cell adapted to be used.
You. By arranging a plurality of photoelectric conversion elements 10,
Large area can be easily realized. Figure8like
When bundled, the second formed on the outer peripheral portion of each photoelectric conversion element
Electrodes 15 (transparent electrodes) are interconnected.
Therefore, they are connected in parallel. Therefore, as shown in FIG.
A unit having a configuration in which a plurality of photoelectric conversion elements of the invention are connected in parallel.
By connecting the switches 20 in series, a higher potential
A difference can be made. FIG. 9 shows a solar cell having such a structure.
It is a figure which shows a structure schematically. Plurality of photoelectric conversion elements 10
Multiple units 20 connected in parallel are connected in series.
And constitute a solar cell. Photoelectrics that make up the unit
The first electrodes 11 of the conversion element 10 are connected in common and
Connected to the second electrode of the unit. Such a structure
By adopting it, series connection can be easily realized,
Output Vout can be obtained. In FIG. 9, one unit is formed by four photoelectric conversion elements.
A knit 20 is constructed, and five more units 20 are directly
Although the configuration is a column connection, the photoelectric
Number of conversion elements 10, unit 20 constituting solar cell
May be determined as needed. For example
By repeating the same connection, a larger area
A solar cell having the same. Solar cell area
Is determined by the product of L and W shown in FIG.
W is determined by the length of one electrode 31, and W is the photoelectric conversion element to be connected.
Determined by the number of children. Such solar cells have an area, shape
Desired ones can be obtained in both forms. Further, FIG.
A conductive resin material having a light-transmitting structure as exemplified in
For example, it may be fixed by. L shown in FIG. 9 depends on the length of the first electrode 31.
However, the semiconductor layers 12 to 14 and the second electrode 15 are formed.
The length of the film formation device to be formed is not limited to the length L. example
For example, the length L of the first electrode 11 is larger than the length of the film forming apparatus.
If it is difficult, perform roll-to-roll film formation.
What should I do? Using thermal chemical vapor deposition (thermal CVD method)
If necessary, there is no need to consider the vacuum, and in principle
Film formation for the limited length L can be performed continuously. Ma
Also, in the present invention, it is necessary to care about the uniformity of the two-dimensional film formation.
Because there is no
No need to worry. Therefore, in the present invention, photoelectric conversion
Create elements and solar cell elements on a roll-to-roll basis
And productivity can be greatly improved. Also, as shown in FIG.
Is the highest temperature in the manufacturing process depending on the material used for the substrate 11.
The degree was limited. In contrast, in the present invention, the first
The electrode 11 may be made of a linear conductive material such as a metal wire.
And glass substrates and plastic substrates
The maximum temperature in the manufacturing process is higher than when using plates
Since it can be freely selected, it is necessary to improve the film quality.
At the same time, productivity is greatly improved. (Embodiment 7) In Embodiment 6, the present invention
Examples of large-area solar cells using photoelectric conversion elements
I explained about it (see Fig. 9).
It can be applied using the fact that it is in a state. FIG. 10 shows the case where the photoelectric conversion element of the present invention is applied.
FIG. 2 is a diagram schematically showing a cross-sectional structure of a transmission type liquid crystal display device.
You. In the liquid crystal display device 30, a pixel electrode 31 is formed.
Array substrate 32 and a counter substrate on which a counter electrode 33 is formed.
The liquid crystal layer 35 is sandwiched between the plate 34 and the plate 34. liquid crystal
The layer 35 is formed between the pixel electrode 31 and the counter electrode 33.
In response to the applied electric field, its orientation and layer state change,
Is controlled. On the other hand, on the back of the array substrate 32
A backlight 36 is provided.
The light from 36 is modulated by using the liquid crystal layer 35 as a light valve.
By doing so, the display is performed. Therefore, the pixel electrode 31
The region where is not formed does not contribute to display. Therefore, adjacent pixels that do not contribute to the display
The solar cell of the present invention is disposed in the gap between the electrodes 31.
You. Specifically, for example, scanning (not shown) of the array substrate
Line and signal line.
Just do it. In such a liquid crystal display device 30, the display
Efficiently use the irradiation light that irradiates the area that does not contribute
Can be charged. Therefore, the power supply of the liquid crystal display device
In addition to reducing consumption, longer usage time and battery
Terry can be downsized. The photoelectric conversion element includes a pixel electrode and a pixel electrode.
As far as space permits, bundle them to get more electromotive force
What should I do? Also, due to the arrangement of photoelectric conversion elements
In order not to disturb the electric field inside the display pixel,
In order not to complicate the substrate manufacturing process, photoelectric conversion elements
Is preferably installed on the backlight side of the array substrate.
is there. (Embodiment 8) In recent years, a notebook type personala
As display elements for computers and portable display terminals
Research and development of liquid crystal display (LCD) are being actively conducted.
You. Amorphous silicon (a-Si) film on glass substrate
Switch composed of thin film transistors (TFTs) using TFTs
Matrix type liquid crystal display device with
Low cost, large area, high definition, high image quality and low power consumption
Because a flat panel display has been realized.
is there. A liquid crystal display device of this kind uses a transparent insulating material.
And an array substrate consisting of
Opposite substrate made of transparent insulating material and array substrate
And a liquid crystal layer sandwiched between substrates.
By applying a voltage to change the orientation and phase state of the liquid crystal molecules,
Display. On the array substrate, such as TFT
The switching elements are formed in a matrix and
Scanning lines, signal lines and pixel electrodes are electrically connected to the switching elements.
Connected. Conventional active matrix type liquid crystal display
The apparatus will be described with reference to FIGS. 12, 13, and 14.
You. FIG. 12 is a diagram schematically showing a configuration of an array substrate, and FIG.
3 is a diagram schematically showing a planar structure of a unit pixel, and FIG.
FIG. 3 is a diagram schematically showing a cross-sectional structure of a pixel. The display area 122 on the array substrate 121
Is a thin film transistor for controlling the pixel electrode 123 and the pixel potential.
A star 124 is formed. Thin film transistors are games
Electrode 125a, source electrode 126a, drain electrode 1
26b is a field effect transistor. Gate
The electrode substrate 125 is made of an array substrate 12 made of a transparent insulating material.
1, the gate insulating film 127, the semiconductor layer 12
8 are sequentially formed to form a thin film transistor 124
Is deposited. Outside the display area 122, the array substrate 1
Scan lines 125b and signal lines 126b on 21 and connection wiring
Forming connection pads 130a and 130b connected via
Have been. Further, a resin film is provided around the array substrate 121.
A peripheral substrate 131 made of a
A peripheral circuit 32 is disposed on the board, and an anisotropic conductive film (An
isometric Conducting Film
Or Anisotropic Conductive
  Film: ACF) via Tape Automa
Peripheral substrate 13 by ted bonding (TAB)
Electrical connection between 1 and connection pads 130a, 130b
Has been taken. On the other hand, the above-mentioned thin film transistor is provided.
Thin film transistor whose structure is completely different from the liquid crystal display device
There has been proposed a liquid crystal display device having a liquid crystal display. This thin film
A transistor is a semiconductor film or insulating film on a linear conductive material.
And the like. FIG. 15 shows such a cable-like thin film transformer.
Outline the configuration of the array substrate of a liquid crystal display device with a transistor.
FIG. 16 and 17 show such a case.
The figure which shows the structure of a cable-shaped thin film transistor schematically
It is. FIG. 16 is a sectional view taken on a plane parallel to the center of the conductor wire,
FIG. 17 is a cross-sectional view taken along a plane orthogonal to the central axis. Gate electrode 14 made of a linear conductive material
5a and a gate insulating film formed on the surface of the gate electrode
147 and the semiconductor layer 1 formed on the gate insulating film.
48 and a source and a source formed separately on the semiconductor layer.
A drain electrode 146a, a gate insulating film 147,
The semiconductor layer 148 and the source / drain electrodes 146a are
Formed coaxially with the center of the metal wire material 145b forming the gate electrode
Has been established. Forming such a thin film transistor 144
The metal line 145b to the array substrate 141 provided with the groove.
Embedded on the top, furthermore, the pixel electrode 143, the signal line 146b
Are formed to form an array substrate.
The metal wire 145b extends to the outside of the display area 142 and has a shape.
And a first connection pad made of an outer metal.
Electrical connection is made to the outer periphery at the node 150a.
You. A resin film is provided around the array substrate 141.
A peripheral substrate 151 made of a film or the like is disposed on the peripheral substrate 151.
A peripheral circuit 152 is arranged on the board, and the peripheral circuit 152
An anisotropic conductive film (AC) is provided between the second connection pad 150b and the second connection pad 150b.
Electrical connection is formed by TAB via F)
You. This type of thin film transistor is based on
Because it can be created on a metal wire as a roll independent of the plate
In addition, the high temperature
Good characteristics can be obtained by the process. Therefore, the ratio
The problem is that the weight is small and it has impact resistance but low heat resistance.
It is also possible to use plastic that was
You. In addition, the thin film transistor exceeding the specification became defective
In a conventional liquid crystal display device as shown in FIG.
In this structure, the thin film transistor must be discarded.
Thin film transistors showing good properties after forming transistors
Display device can be created by selecting
Possible, high productivity and low cost
There are benefits. On the other hand, on a metal wire as shown in FIG.
Liquid crystal display device with formed thin film transistor
Connection pad compared to the liquid crystal display device as shown in FIG.
Connection to increase the number of electrical connections through
Productivity drops due to more defects per minute
The problem arises. Further, the number of connection pads is increased.
In addition, since the area of the outer peripheral portion of the display area increases,
There is also a problem that the ratio of the indicated area is reduced. The thin film transformer thus formed on the metal wire
Metal line extending outside the display area.
The first connection pad made of metal on the outside
It is electrically connected to the metal wiring on the outer periphery,
Peripheral metal wiring and peripheral circuit at second connection pad
Liquid crystal display device where the electrical connection of
Increase the electrical connection through the connection pad
In addition, productivity decreases due to an increase in defects at the connection part
Problems and the number of connection pads increases
In addition, since the area of the outer peripheral portion of the display area increases,
To solve the problem that the ratio of the indicated area is small
Is desired. In order to solve such a problem, for example,
For example, an array substrate made of an insulating transparent material and this array
It is placed facing the substrate and a common electrode is formed on the facing surface
Between the array substrate and the opposing substrate
A liquid crystal display device having a liquid crystal layer formed therebetween.
In the peripheral area of the array substrate,
Shields the light in the region and has a melting point
A peripheral substrate made of a high material, and
It is made of a conductive material extending to the surrounding substrate.
Linear wiring. Further, a thin film is coaxially formed on the linear wiring.
A transistor is formed and the thin film transistor
A driving element for driving the substrate is formed on the peripheral substrate.
And the linear wiring and the driving element are connected to the peripheral substrate.
To connect via conductor thin film wiring formed on the board
May be. For example, the peripheral substrate is made of a semiconductor such as silicon.
It may be formed from a body material. That is, the liquid crystal display device of the present invention has an insulating property.
An array substrate made of a transparent material and facing this array substrate
Opposing base with common electrodes formed on opposing surfaces
Formed between the array substrate and the counter substrate
A liquid crystal display device comprising:
It is located around the array substrate and is more flexible than this array substrate.
Peripheral made of high point material that does not transmit light in the visible region
Board and the peripheral board that is placed on this array board.
And a linear wiring made of a conductive material.
ing. To solve such a problem, the present invention
Liquid crystal display device is an array substrate made of insulating transparent material
And a visible region made of a material with a higher melting point than the array substrate
Peripheral substrate that does not transmit light in the
The linear wiring made of conductive material placed on the peripheral substrate
At the peripheral circuit by connecting pads on the peripheral substrate.
The number of connections is reduced by making electrical connections to the
It is possible to eliminate it. Further, as the peripheral substrate, silicon or the like is used.
By using semiconductor substrates, semiconductor microfabrication
It becomes possible to form a peripheral circuit using the process. the above
In a liquid crystal display device such as
To be able toUnfortunateKeep good
And increase productivity. Furthermore, the connection pad
Reduce number and form finer peripheral circuits
The area of the outer periphery of the display area is small.
Therefore, the ratio of the effective display area can be increased.
You. Referring to FIG. 18, such a liquid crystal display device will be described.
An embodiment will be described. The conductive metal wire 105b has a low resistance.
Cu, Al, W, Τa, Αu lines and the like are used. Metal wire
105b, the gate insulating film 107 and the semiconductor layer 10
8. Contact layer 109 and source / drain electrode material 1
06a is formed so as to cover the metal line 105b. Gate
As the insulating film 107, a silicon oxide film, a silicon nitride film
A-Si: Η film or poly
A silicon film or the like may be used. As the contact layer 109, for example,
A-Si: H doped with P (phosphorus) may be used.
By etching these, as shown in FIG.
Such a thin film transistor 104 can be formed. The thin film transistor formed by the above method
A metal wire 105b formed with a plurality of
It is embedded in the array substrate 101 in the row direction. At this time, a metal wire
Let's create the number of thin film transistors 104 on 105b
Equal to the number of pixels in the row direction of the liquid crystal display device, and
Formed at equal intervals to match the pitch of the pixel electrodes 103
Must have been. In addition, the thin film transistor 104
Are formed at equal intervals.
An insulating film 107, a semiconductor layer 108, and a contact layer 10
It is necessary to etch so that 9 does not remain. Buried
The display pixel electrode 103 is attached to the embedded thin film transistor.
The formed and buried metal wire 105b is sowed in the column direction.
The source / drain electrode 106a is formed, and the active
A lith-type array substrate 101 is formed. Metal wire 105
b serves as a gate electrode, and the thin film transistor 10
4 is turned on and off. And this thin film transistor
The star 104 performs switching for applying a voltage to the pixel electrode.
Plays the role of transistor. Source / drain electrode 1
06a and the signal line 106b and the peripheral circuit at the same time.
Connection pad 110 on the signal line side for connecting the path 112
b is formed. Si solidified around the array substrate 101
Peripheral substrate made of opaque material with high heat resistance such as11
1A connection pad 110a on the gate line side is arranged on
Metal line 105b and peripheral circuit on connection pad 110a
112Make an electrical connection with Peripheral circuit112And connection
The pad 110a can be formed by the same process.
is there. [0076] [0077] [0078] [0079] [0080]【The invention's effect】 As described above, the liquid crystal display of the present invention
According to the device Number of electrical connections between metal wiring and peripheral circuits
To reduce defects at the connection part.
Can be suppressed, and productivity can be improved. Further, as the number of connection pads decreases,
Especially, it becomes possible to form fine peripheral circuits
In addition, since the area of the outer peripheral portion of the display area becomes smaller,
The ratio of the indicated area can be increased.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram schematically showing an example of the structure of a photoelectric conversion element of the present invention. FIG. 2 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion element of FIG. FIG. 3 is a diagram showing an example in which the photoelectric conversion element of the present invention is applied to a solar cell. FIG. 4 is a diagram schematically showing another example of the structure of the photoelectric conversion element of the present invention. FIG. 5 is a sectional view schematically showing still another example of the structure of the photoelectric conversion element of the present invention. FIG. 6 is a view schematically showing still another example of the structure of the photoelectric conversion element of the present invention. FIG. 7 is a diagram illustrating an example of a method for manufacturing a photoelectric conversion element of the present invention. FIG. 8 is a diagram schematically showing a configuration example of a solar cell using the photoelectric conversion element of the present invention. FIG. 9 is a diagram schematically showing another example of the configuration of a solar cell using the photoelectric conversion element of the present invention. FIG. 10 is a diagram schematically showing a cross-sectional structure of a transmission type liquid crystal display device to which the photoelectric conversion element of the present invention is applied. FIG. 11 is a diagram schematically showing a structure of a conventional photoelectric conversion element. FIG. 12 is a diagram schematically showing a configuration of an array substrate of a conventional liquid crystal display device. FIG. 13 is a partially enlarged view of the conventional liquid crystal display device. FIG. 14 is a cross-sectional view of a thin film transistor of a conventional liquid crystal display device. FIG. 15 is a diagram showing a schematic configuration of a conventional liquid crystal display device. FIG. 16 is a cross-sectional view of a thin film transistor of a conventional liquid crystal display device. FIG. 17 is a cross-sectional view of a thin film transistor of a conventional liquid crystal display device. FIG. 18 is a diagram schematically showing a configuration of a liquid crystal display device of the present invention. FIG. 19 is a cross-sectional view of a thin film transistor applied to a liquid crystal display device of the present invention. [Description of Signs] 11 First electrode 12 n-type semiconductor layer 13 i-type semiconductor layer 14 p-type semiconductor layer 15 second electrode 15 b second (Spiral shape) 16 anti-reflection films 101, 121, 141 ... array substrates 102, 122, 142 ... display areas 103, 123, 143 ... pixel electrodes 104, 124, 144 ... ... thin film transistors 105a, 125a, 145a ... gate electrodes 105b, 125b, 145b ... gate wirings 106a, 126a, 146a ... source / drain electrodes 106b, 126b, 146b ... ... gate insulating films 108, 128, 148 ... semiconductor layers 109, 129, 149 ... contact layers 110a, 130a, 150a ... Connection pads 110b, 130b, 150b ......... second connection pads 111,131,151 ......... peripheral board 112, 132, 152 ......... peripheral circuit

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-9-266315 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 29/786 G02F 1/1368

Claims (1)

(57) [Claim 1] A gate insulating film, a semiconductor layer and a semiconductor layer, such that a semiconductor layer and a contact layer are formed at equal intervals for each pixel electrode by covering a conductive metal wire coaxially. A liquid crystal display device comprising: an array substrate in which a plurality of thin metal transistors having a plurality of thin transistors in which the contact layers are sequentially stacked and a source electrode and a drain electrode are formed so as to cover the contact layers are embedded. A liquid crystal display device, comprising: a peripheral substrate provided around the array substrate; and a connection pad provided on the peripheral substrate and connected to the metal line of the thin transistor.