JP3162144B2 - Sheet-like substrate transfer device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for transferring a thin substrate. More specifically, the stationary state can be maintained while the sheet-like substrate is floating, and the amplitude of the vibration of the sheet-like substrate in the stationary state can be performed with an accuracy of 0.2 mm or less. The present invention relates to an apparatus and a method for transferring a thin substrate that can be prevented.

[0002] The present invention also conveys a sheet-like substrate in an ultra-clean atmosphere, and provides a sheet-like substrate transfer system capable of conveying the sheet-like substrate in such an ultra-clean atmosphere. , Ultra Clean Floating Traffic System (UCFT).

[0003]

2. Description of the Related Art As a technique related to air flow transfer of a wafer, a groove is formed on a track surface, and a fluid is ejected along the groove to draw a fluid from a fluid thin film into the groove, thereby forming a vacuum state. A technique is known in which the wafer is formed and thereby the wafer is stopped by a vacuum suction action (Japanese Patent Publication No. 55-38828).

This technique has excellent characteristics as a transport mechanism.

[0005] However, the inventor of the present invention has found that there are the following problems when actually using such a transport device.

First, it is difficult to set a desired rest position of the wafer. That is, for example, when a wafer is introduced into a film forming chamber, the stationary position of the wafer is shifted by ± 0.2 mm from a predetermined position.
It is desired that the accuracy is within the range.

For this purpose, first, the wafer is set at ± 0.2
It is necessary to guide to a predetermined position with an accuracy of mm. Next, it is necessary to stop the wafer at a predetermined position without vibrating.

However, in the above-mentioned prior art, an attempt was made to maintain the stationary state with such accuracy, but it was difficult to maintain the stationary state with such accuracy. Also,
There is no transfer device that can be stopped with such accuracy.

As a result, in the conventional transfer apparatus, vibrations occur in the radial direction, the circumferential direction, and the horizontal direction in the stationary state, and the amplitude thereof far exceeds 0.2 mm.

Second, the wafer is transferred using a conventional transfer device and processed (film formation, etching, etc.) on the wafer.
It has been found that performing the processing does not necessarily enable processing having desired characteristics. For example, even if an oxide film is formed, the insulating properties of the film are not good, and even if etching is performed, etching with high selectivity cannot be performed. The present inventor investigated the cause, and found that impurities (particles, moisture) and the like adhered to the wafer surface, which deteriorated the workability. Further investigations have revealed that such impurities adhere during wafer transfer. Particularly, generation of particles was remarkably observed.

[0011] The above-mentioned conventional problems are not the ones known in the past, but are first discovered by the present inventors.

[0012]

SUMMARY OF THE INVENTION
It is an object of the present invention to provide a thin-plate-substrate transfer device and a thin-plate-substrate transfer method capable of maintaining a stationary state of a thin-plate substrate with a precision of m and preventing contamination of the thin-plate substrate during transfer. I do.

[0013]

According to a first aspect of the present invention, there is provided a sheet-like substrate transporting apparatus having a transfer unit having a transfer space for linearly moving a sheet-like substrate.
A plurality of control units each having a control space for controlling the movement of the sheet-like substrate are hermetically sealed; the sheet-like substrate formed on the lower surface of the transfer space and connected to a gas supply system is lifted. A plurality of levitation ejection holes, and an exhaust unit provided at an appropriate position in the transfer space for exhausting gas in the transfer space, and an exhaust unit provided at an appropriate position in the control space. An exhaust means for exhausting gas in the control space; a suction hole formed at a substantially central portion of a lower surface of the control space (hereinafter, this central portion is referred to as a “control center”) and communicating with a vacuum exhaust system; A groove formed on the lower surface of the control space and extending from the suction hole, and a plurality of radial control ejection holes formed on the lower surface of the control space for controlling the radial position of the thin plate-shaped base. And the It formed on the lower surface of the control space, and a plurality of circumferentially control ejection hole groups for controlling the circumferential position of the sheet-like base, which is formed on the lower surface of the control space,
A plurality of levitation ejection holes for floating the thin plate-like substrate,
At least a plurality of stop / delivery ejection holes formed on the lower surface of the control space for stopping or sending the sheet-like substrate to the next unit, wherein the groove is controlled by the center of the sheet-like substrate. It is characterized in that it is closed inside the periphery of the thin plate-shaped base when it comes to the center.

[0014]

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments. It should be noted that the present invention is not limited by the following examples.

FIG. 1 shows the overall configuration of an example of a thin substrate (eg, wafer) transfer apparatus according to the present invention.

Hereinafter, each configuration will be described.

The apparatus for transporting a sheet-like substrate according to the present embodiment basically includes a transfer unit 1 having a transfer space for linearly moving the sheet-like substrate, and a control space for controlling the movement of the sheet-like substrate. And a plurality of control units 2 having

FIG. 2 shows the details of the transfer unit 1. FIG. 2 is a view in which a part of the transfer unit is broken.

The transfer unit 1 basically includes a base 3 and a transfer space 4.

The transfer space 4 is formed by the enclosing member 5 and the upper surface of the base 3. The transfer space 4 is open at the left and right in the drawing, and the thin substrate is transferred to an adjacent control unit or transfer unit through the opening. I do.

On the lower surface 6 of the transfer space 1 (the upper surface of the base 3), a plurality of floating jet holes 7 are formed to form floating jet holes. Each of the floating orifices 7 is provided with a gas supply system 8a.
It is connected to the.

In the present embodiment, each of the floating ejection holes 7 is perpendicular to the traveling direction (A or B in the drawing) of the thin plate-shaped base and opens upward. In this example, each of the floating jet holes 7 is opened at an angle of about 22 ° with the lower surface 6. Of course, it is not necessary to limit the angle to 22 °, and it is not necessary to set the same angle for each of the floating ejection holes. For example, the angle of the floating ejection hole far from the center line is reduced, and The angle of the floating orifice may gradually increase as it approaches.

When gas is ejected from the floating ejection hole,
The gas is ejected in the direction indicated by the arrow a shown in FIG. 2, and the gas hits the back surface of the sheet-like substrate that is passing therethrough, thereby preventing the sheet-like substrate from sinking and coming into contact with the lower surface 6.

Each of the levitation ejection holes 7 is provided inside the base 3.
A ventilation path (not shown) communicating with the gas supply system 8a is formed through the ventilation path.

On the other hand, as shown in FIG. 1, the transfer space 4 has exhaust means 9 for exhausting gas in the transfer space 4 to the outside.
a is provided. In the present example, it is provided above the enclosing member 5. The exhaust means 9a is connected to the gas exhaust line 10.

In the present invention, on the lower surface 6 of the transfer space 4, only an ejection hole which is substantially perpendicular to the traveling direction of the sheet-like substrate and opens upward is formed. There are no orifices opening parallel or oblique to the direction of travel. Therefore, the flying height of the wafer can be secured with a smaller amount of gas, and the transfer speed of the wafer can be made constant rather than acceleration in any transfer section.

Next, the control unit will be described.

FIG. 3 shows the overall configuration of the control unit.
The control unit 2 also basically includes a control space and a base 3 like the transfer unit 1. The control space is formed by the enclosure and the upper surface of the base 3 as in the transfer space.
It is not shown in FIG. However, the control space in the present example is open in four directions, and is configured to be able to transport the thin plate-shaped substrate in the left, right, up and down directions in the drawing.

A suction hole 11 is provided at substantially the center of the lower surface 6 of the control space of the control unit 2 (the center of the position where the thin plate base is to be stopped).

The suction hole 11 is connected to a vacuum exhaust line 12, and the vacuum exhaust line 12 is further connected to an ultra-high-purity exhaust pump 13.
By operating 3, a negative pressure can be applied to the suction hole via the evacuation line 12.

A groove 42 (black portion in FIG. 3A) extending outward from the suction hole 11 is formed on the lower surface of the control space. In this example, the groove 42 is dug symmetrically around the suction hole 11.

A characteristic point is that the groove 42 is closed within the peripheral edge 14 of the thin plate-shaped substrate. In other words, the present inventor has found that the shape of the groove is important for stopping and stopping (especially at rest) the thin plate-like substrate with a high accuracy of ± 0.2 mm. I found that the point is whether or not As described above, the groove 42 can be stopped with high accuracy by closing the groove 42 within the peripheral edge of the thin plate-shaped base. It is not clear why closing the groove 42 within the periphery of the sheet-like substrate can be stopped with high precision. However, in the above-mentioned prior art, since a negative pressure state is created by ejecting gas into the groove, the groove has to be inevitably connected to the outside in order to escape the gas. It is speculated that the vacuum created by the gas is not stable and cannot be stopped and stopped with high accuracy.

An orientation flat 14a is formed at a part of the peripheral edge 14 of the thin plate-like base shown in FIGS. 3A and 3B, and the groove 42 is also fitted in the peripheral edge at that part. It is provided in.

When the sheet-like base is stopped at a predetermined position in the control space of the control unit, the sheet-like base 15 is kept stationary on the exhaust port by evacuating through the absorption hole 11.

In order to detect the position of the thin plate-like substrate 15, a sensing means such as an optical fiber tube may be provided at an appropriate position.

On the lower surface of the control space, there are formed a floating jet, a radial control jet, a circumferential control jet, a stop jet, and a delivery jet. .

FIG. 4 shows the floating orifice. In FIG. 4, the ejection holes other than the floating ejection holes are not shown.

The floating jet holes are formed over the entire lower surface 6 of the control space.

Each of the floating ejection holes 17 (portions indicated by black dots in FIG. 4) is open toward the control center.
In this example, the lower surface also forms an angle of 22 °, but is not limited to this angle. That is, any opening may be provided as long as the gas is applied to the back surface of the thin substrate when it is on the control center, so that the thin substrate can be prevented from contacting the lower surface.

The floating orifice 17 is provided in the gas supply system 8b.
It is connected to the.

Next, the radial direction control ejection holes will be described with reference to FIGS.

The radial control ejection holes 16 are indicated by black circles in the drawing. The radial control ejection holes 16 are for correcting positional deviation in the radial direction.

The radial control orifice 16 faces the control center, and opens at an angle of 22 ° to the lower surface 6 in this embodiment. Therefore, by ejecting gas from the radial direction control ejection holes 16, the position of the thin plate-shaped base can be corrected to the center position.

The radial control jet holes 16 are formed slightly outside the peripheral edge 14 of the thin plate-shaped base. The portion of the orientation flat 14a is also formed slightly outside. For example, in the case of a 150 mmφ thin plate-shaped substrate, from the point of peripheral position to quickly correct the position in the radial direction,
It is preferably provided about 3 mm outside, more preferably about 2 mm outside.

On the other hand, in this example, two ejection holes (17a,
17a '), (17b, 17b'), (17c, 17
c ′) and (17d, 17d ′) are formed as a set, and eight ejection holes are formed. Of course, it is not limited to this number. Independently for each set, each gas supply system 8d,
8e, 8f, and 8g. For example, if the desired position is shifted to the upper right in the drawing, the upper right 2
If the gas is ejected from the two ejection holes (17a, 17a '), it can be corrected to a desired position. At this time, the ejection of the gas from the other ejection holes is stopped or the gas is ejected at a gas pressure smaller than the gas pressure from the upper right ejection holes (17a, 17a ').

If such a radial direction control ejection hole is additionally provided, a minute positional deviation can be corrected in a very short time. The disposition position is preferably on the periphery of the thin plate-shaped substrate from the viewpoint of performing more accurate position correction. In particular, in the case of a thin plate-shaped substrate having an orientation flat, the ejection holes (17a , 17a ') are preferably arranged close to the center.

Next, a group of rotation control ejection holes will be described with reference to FIG.

The rotation control ejection holes are for controlling the rotation direction. The rotation control ejection hole is formed in the periphery of the thin plate-shaped base. 1 of the radius of the thin plate-shaped substrate
It is more accurate to provide on the circumference of a radius of ４ to １ ／
This is preferable from the viewpoint of performing a short-time correction.

The rotation control orifices are open in the circumferential direction, and there are those that open clockwise and those that open counterclockwise, and open in the clockwise direction. The one and the one that opens counterclockwise are connected to separate gas supply systems 8h and 8j, respectively.

For example, when it is desired to rotate the thin plate-shaped base in a clockwise direction, the gas supply system 8h is turned on, and gas may be ejected from the ejection holes opened in the clockwise direction.

The rotation control ejection holes (18a ₁ , 18b ₁ ), (18a ₂ , 18b ₂ ), (18)
_{a 3, 18b 3), (} 18a 4, 18b 4) The distance of the interval (e.g. 18a ₁ and 18b _1), 1 to 5 cm are preferred, also 70 positions the wafer diameter of the rotary control jet holes To 80% or less. With this range, the rotation direction can be more accurately controlled.

Next, the delivery / stop ejection holes will be described with reference to FIG. FIG. 8A is a plan view, and FIG.
FIG. 2A is a cross-sectional view taken along a line 1-1 in FIG. FIG. 8C is a sectional view taken along line 3-3 of FIG.
-4 is the same as the sectional view. The example shown in FIG. 8 is an example in which sending / stopping is performed in the X-axis or Y-axis direction. In addition, sending
Portions 19a ₁ and 19a ₃ of the stop ejection holes are arranged in two lines at positions symmetrical with respect to the X axis. Portions 19a ₂ and 19a ₄ of the delivery / stop ejection holes are arranged in two lines at positions symmetrical with respect to the Y axis. Other parts 20a ₁ , 20a
₃ are linearly arranged on the X-axis. Similarly, 20a ₂ and 20a ₄ are arranged on the Y axis. Of these delivery / stop orifices, 19a ₁ , 19a ₃ are X
It is parallel to the axis and opens toward the control center. Sending
The stop ejection holes 19a ₂ and 19a ₄ are parallel to the Y axis and open toward the control center. On the other hand, the delivery / stop ejection holes 20a ₁ and 20a ₃ are parallel to the X axis and open in the direction opposite to the control center, and are opened.
₂ , 20a ₄ are parallel to the Y axis and open in the direction opposite to the control center. Delivery / stop jet holes 19a ₁ ,
20a ₃ to the gas supply system 8j, delivery-stop jet holes 19
a ₂ and 20a ₄ are independently connected to a gas supply system 8l. Further, the delivery / stop ejection holes 19a _3, 20a
₁ is a gas supply system 8k, which has a discharge / stop jet hole 19a ₄ ,
20a ₂ are independently connected to a gas supply system 8m.

Accordingly, for example, when the thin plate-like base is moving from the -X direction, if the gas supply system 8j is turned on, gas is blown out from the sending / stopping jet holes 19a ₁ and 20a ₃ and the thin plate-like base is discharged. And the thin plate-shaped base stops. At this time, the other gas supply systems are turned off.

Next, for example, in the case of sending out the thin plate-like substrate in the Y direction, if the gas supply system 8k is turned on, the gas is ejected from the sending / stopping ejection holes 19a ₄ and 20a ₂ and the thin plate-like substrate is discharged. Are sent out in the Y direction. At this time, the other gas supply systems are turned off.

It is preferable that the inside diameter of each of the above-mentioned various ejection holes is 1.0 mm or less, more preferably 0.8 mm or less. When the thickness is 1.0 mm or less, the amount of gas per one ejection hole can be stably supplied, and a sharp increase in the amount of gas can be prevented.

It is preferable that at least the surface of the transfer unit and the control unit that comes into contact with the gas is a mirror-finished surface having no R-transformed layer and having an Rmax of 1 μm or less. When such a surface is used, gas release (for example, moisture) from that surface can be prevented, impurities can be prevented from being mixed into the carrier gas, and the impurity concentration of the carrier gas is maintained at several ppb or less. Becomes easier.

Particularly, stainless steel having an impurity concentration of several pp
b in an oxidizing gas of b or less (preferably 400 ° C.
(550 ° C.), when the surface of the passivation film is formed, not only is the gas emission from the surface extremely small, but also it has abrasion resistance. Generation of particles due to contact can be extremely reduced. The passivation film preferably has a thickness of 10 nm or more.

Further, as will be described later, when the gas system is a closed circulation system, the sliding portion in the circulation pump or the vacuum exhaust pump is the largest source of particles, and the sliding surface is made of stainless steel. Is heated in an oxidizing gas having an impurity concentration of several ppb or less to form an Rmax of 1 μm.
The generation of such particles can be suppressed to several ppb or less by using the following mirror-finished surface as the surface of the passivation film.

Next, the neutralization of the electric charge of the thin plate-shaped substrate will be described. The thin plate-shaped substrate may be charged during transportation or after processing. In the charged state, particles are easily attached. In addition, if the process proceeds to the next processing step while being charged, desired processing cannot be performed. For example, when performing ion implantation on a thin plate-shaped substrate, if the thin plate-shaped substrate is charged, ion implantation at a desired range cannot be performed.

In this embodiment, the charged thin plate-like substrate is neutralized during the conveyance. FIG. 9 shows the configuration. In order to neutralize the thin plate-shaped substrate charged during transportation, an ion generating means 31 is provided in this example. Ion generating means 3
1 is, for example, an ultraviolet irradiation lamp 32, a metal mesh 3
3 (electron emission portion by photoelectric effect), negative ion source gas 34
What is necessary is just to comprise. When ultraviolet rays are irradiated on the metal mesh 33 from the ultraviolet irradiation lamp 32, electrons are generated by the photoelectric effect. The electrons combine with the negative ion source gas to generate negative ions. Negative ions are introduced into the transfer unit by carrying an airflow of negative ion gas, and neutralize the charged thin plate-like substrate. In addition, as metal of the metal mesh 33,
What can emit electrons by photoelectric effect when irradiated with ultraviolet rays may be appropriately selected depending on the combination with the wavelength of ultraviolet rays. As the negative ion source gas, for example, a hydrogen gas, a nitrogen gas, or the like having an impurity concentration of several ppb or less may be used. In this manner, neutralizing the charged thin plate-like substrate with negative ions means that neutralization can be performed without disturbing the flow of the carrier gas. That is, if the neutralization is to be performed by electrons, a large gas flow rate is required to send the electrons to the thin plate-like substrate,
The flow of the carrier gas may be disturbed. However, since electrons have a small mass and easily flow into the inner wall, a flow must be created to counter the flow, and a large flow rate is necessarily required to create such a flow. On the other hand, in the case of negative ions, since the mass is much larger than that of the electrons, the ions easily travel on the gas flow and are sent to the thin plate-shaped substrate, so that the flow of the carrier gas is not disturbed.

In this embodiment, the ion generating means is provided above the transfer unit, but may be provided in the control unit or in both the control unit and the transfer unit. Although the turbulence of the gas flow of the carrier gas due to the provision of the ion generator is extremely small, it is preferable to provide the transfer unit in the transfer unit in order to further reduce the influence.

Next, the combination of the control unit and the transfer unit will be described.

The combination of the control unit and the transfer unit is optional, for example, as shown in FIGS. 10 (a), (b), and (c).
The following combinations are possible.

In the combination, it is preferable to connect them with a metal gasket, a metal O-ring, or the like, and it is preferable that the leak amount of each part is 10 ⁻¹⁰ [torr · l / s] or less.

Next, the gas supply system and the exhaust system will be described.

The evacuation hole 11 formed on the lower surface of the transfer space and the control space is connected to the buffer tank 21 via the ultra-high-purity evacuation pump 13. Further, exhaust means provided in the transfer space and the control space are also connected to the buffer tank 21. The gas stored in the buffer tank 21 is supplied from the buffer tank 21 to the gas supply systems 8a to 8m after passing through the ultra-high-purity circulating pump 22, the filter 23, and the gas purification unit 24 to obtain high-purity gas. When supplying the gas to the gas supply systems 8a to 8m base gas supply pipes, a new gas may be added from the clean gas cylinder 25 in addition to the circulating gas passing through the above-described path.

As a gas to be supplied, an inert gas having an ultra-high purity (impurity concentration of water or the like is 10 ppb or less) is used. Also,
The ejection speed is set to 200 m / sec or less. 200m
In the case where the rate is not less than / sec, erosion due to gas is generated, particles are generated, and workability for the thin plate-shaped substrate is deteriorated.

As described above, since the gas system is closed from the atmosphere and the generation of impurities inside is suppressed,
The impurity concentration of the carrier gas can be constantly kept at a few ppb or less, and it becomes possible to prevent the contamination of the thin plate-like substrate by impurities during the carrying process.

Although illustration is omitted in this example, it is preferable to mount the present apparatus on an appropriate vibration absorbing apparatus in order to absorb the influence of external vibration. (Example of Operation Procedure) The above-described thin plate-shaped substrate transfer device can transfer the thin plate-shaped substrate by operating, for example, as follows.

A description will be given by taking as an example a case in which a thin plate-shaped base that has entered the control unit from the −X direction shown in FIG.

Deceleration / Stop The approach of the thin plate-shaped base is detected and the gas supply system 8j is turned on. Further, the gas supply system 8b is turned on. The gas supply system 8b is kept on during the subsequent procedure.

When the switch 8j is turned on, gas is ejected from the delivery / stop ejection holes 19a ₁ and 20a _3, and the gas slows down the thin plate-shaped base. At that time, the speed of the sheet-like substrate is detected, and if the gas is ejected at a gas pressure or a gas amount corresponding to the speed, the center of the sheet-like substrate is approximately adjusted to the control center 11.
And the sheet-like substrate can be stopped. Further, by turning on / off the gas supply systems 8j, 8k, 8l, and 8m or repeating the stepwise adjustment of the gas ejection amount as appropriate, the center of the sheet-like base is made to coincide with the control center 11, and the sheet-like base is stopped. be able to. The amount of gas ejected at that time depends on the gas supply system 8j during the deceleration of the thin plate-shaped base.
What is necessary is just to make it smaller than the thing which blew off from.

Radial Control Next, the gas supply system 8c is turned on. At this time, the gas supply systems 8j to 8m are turned off. When the gas supply system 8c is turned on, gas is jetted from the jet holes 16 for radial direction control,
The center of the sheet-like substrate almost completely coincides with the control center.

Next, the gas supply systems 8h to 8i are turned on. By adjusting the amount of gas from the gas supply systems 8h to 8i, the position in the rotation direction is corrected in consideration of the crystal orientation and the like of the thin plate-shaped substrate.

Next, after turning off the gas supply systems 8h to 8j, the ultrahigh-purity pump 13 is driven to perform vacuum suction from the suction hole 11. The thin substrate for suction from the suction hole 11 is
Stop at a predetermined position. At this time, the gas supply system 8b is maintained in the ON state, and the gas is constantly jetted from the floating gas jetting hole 17 toward the control center, so that the thin plate-like base is kept in the floating state.

Fine Adjustment Next, the position control of the thin plate-like substrate is performed by repeating the on / off of the gas supply systems 8d to 8g and the on / off of the gas supply systems 8h to 8i again. At this point, the position of the thin plate-shaped substrate is controlled with an accuracy of ± 0.2 mm or less.

Next, the gas supply systems 8c to 8i are turned off and the driving of the ultrahigh-purity pump 13 is stopped. Turn on the gas supply system 8k, and sends the sheet-like base in the Y direction by ejecting gas from the gas ejection for stopping and delivery holes 19a _4, 20a _2. On the other hand, at this time, the gas supply system 8a of the transfer unit existing in the Y direction is also turned on, the thin plate-like substrate is passed through the transfer space of the transfer unit by a constant speed motion, and the thin plate-like substrate is transferred to the next control unit.

In performing the above operation, it is necessary to detect the position (including the direction) of the thin plate-shaped substrate, but an appropriate detecting means may be provided.

Next, in FIG.
The case where the pocket 50 as shown in FIG. When such a pocket 50 is provided, FIG.
As shown in FIG. 14, the amount of gas for carrying the wafer can be reduced. 15 to 17.
Is a case where no pocket is provided. The data shown in FIGS. 12 to 17 were measured by the device shown in FIG.

Further, the measurement of the shearing force F _X applied to the wafer was performed by an apparatus shown in FIG. Figure 1 shows the results.
8 to 20.

It is preferable that a notch is formed in the hole as shown in FIG.

The relationship between the shearing force F _X and the amount of warpage of the wafer was examined. The results are shown in FIGS.

Next, a total gas amount and a gas on / off pulse when the wafer stopped in the control unit was sent to the next unit were examined.
This was performed by measuring _VX shown in FIG. The results are shown in FIGS. 24 and 25.

[0085]

According to the present invention, it is possible to maintain the stationary state of the sheet-like substrate with an accuracy of ± 0.2 mm while the sheet-like substrate is being floated, and to transfer the sheet-like substrate during transportation. Pollution can be prevented.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a transport device according to an embodiment of the present invention.

FIG. 2 is a partially broken perspective view showing the transfer unit of the transfer device according to the embodiment of the present invention.

FIG. 3A is a perspective view illustrating a lower surface of a control unit of the transport device according to the embodiment of the present invention. (B)
It is an enlarged view of the groove part shown to (a).

FIG. 4 is a perspective view illustrating an arrangement of a floating injection hole of a control unit of the transport device according to the embodiment of the present invention.

FIG. 5 is a perspective view showing an arrangement of radial control injection holes of a control unit of the transport device according to the embodiment of the present invention.

FIG. 6 is a perspective view showing the arrangement of the radial control injection holes of the control unit of the transport device according to the embodiment of the present invention.

FIG. 7 is a perspective view showing an arrangement of rotation direction control injection holes of a control unit of the transport device according to the embodiment of the present invention.

FIG. 8A is a perspective view illustrating an arrangement of a stop / delivery injection hole of the control unit of the transport device according to the embodiment of the present invention. (B) is a 1-1 cross-sectional view of (a). (C)
FIG. 3A is a cross-sectional view of FIG.

FIG. 9 is a perspective view showing an example in which ion neutralizing means is provided.

FIG. 10 is a conceptual diagram showing an example of a combination of a transfer unit and a control unit.

FIG. 11 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 12 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 13 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 14 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 15 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when no pocket is provided in a hole portion of a plate.

FIG. 16 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when no pocket is provided in a hole portion of a plate.

FIG. 17 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when no pocket is provided in a hole portion of a plate.

FIG. 18 is a diagram showing a relationship between a gas flow rate and a force (shear force) applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 19 is a diagram showing a relationship between a gas flow rate and a force (shearing force) applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 20 is a diagram illustrating a relationship between a gas flow rate and a force (shear force) applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 21 is a diagram showing a relationship between a gas flow rate and a force applied to a wafer when a pocket is provided in a hole portion of a plate.

FIG. 22 is a graph showing the relationship between the shearing force applied to a wafer and the amount of warpage.

FIG. 23 is a graph showing the relationship between the shearing force applied to a wafer and the amount of warpage.

FIG. 24 is a graph showing a relationship between a total gas amount and a wafer speed (V _X ) when the gas is sent from a stopped state.

FIG. 25 is a graph showing a relationship between a gas on / off pulse and a wafer speed (V _X ) when the gas is sent from a stopped state.

FIG. 26 is a conceptual diagram of an apparatus for obtaining a relationship between a gas flow rate and a force applied to a wafer.

FIG. 27 is a conceptual diagram of an apparatus for determining a relationship between a total gas amount, a gas on / off pulse, and a wafer speed when the wafer is sent from a stopped state.

[Explanation of symbols]

Reference Signs List 1 transfer unit, 2 control unit 2, 3 base, 4 transfer space, 5 enclosing material, 6 bottom surface, 6a plate, 7 floating ejection hole, 8a to 8m gas supply system, 9a, 9b exhaust means, 10 gas exhaust line Reference Signs List 11 suction hole 12 evacuation line 13 ultra-high-purity evacuation pump 13 ultra-high-purity evacuation pump 14 peripheral edge of sheet-like substrate 14a orientation flat 15 sheet-like substrate (wafer) 17 jetting hole for floating , 16 radial control outlets, 17a, 17a ', 17b, 17b', 17c, 17
c ', 17d, 17d' tweak injection _{ports, 18a 1, 18b 1, 18a} 2, 18b 2, 18a 3, 18
b _3, 18a _4, 18b ₄ rotation control for jet _{holes, 19a 1, 19a 3, 19a} 2, 19a 4, 20a 1, 20
a ₃ , 20a ₂ , 20a ₄ delivery / stop vent, 21 buffer tank, 22 ultra-high-purity circulation pump, 23 filter, 24 gas purification unit, 25 clean gas cylinder, 31 ion generating means, 32 metal mesh, 33 negative Ion source gas, 42 grooves, 50 pockets.

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Yu Umeda 4-2-16-1 Nihonbashi Muromachi, Chuo-ku, Tokyo Inside Watanabe Corporation (72) Inventor Yoichi Kanno 1-1-12 Tsutsumicho, Aoba-ku, Sendai City, Miyagi Prefecture No. 1 Motoyama Works Co., Ltd. (56) References JP-A-52-44177 (JP, A) JP-A-63-225028 (JP, A) JP-A-53-107275 (JP, A) JP-A 59-44 215718 (JP, A) JP-A-1-173735 (JP, A) Contributions of the 14th Super LSI Ultra Clean Technology Symposium (Oct. 28-30, 1991), pp. 23-35 (58) Survey Field (Int.Cl. ⁷ , DB name) H01L 21/68 B65G 51/00

Claims (14)

(57) [Claims] 1. A plurality of transfer units having a transfer space for linearly moving a thin plate-like substrate and a control unit having a control space for controlling the movement of the thin plate-like substrate are hermetically combined; A plurality of levitation ejection holes formed on the lower surface of the transfer space and connected to the gas supply system for floating the thin plate-like substrate, and the transfer space provided at an appropriate position in the transfer space. Exhaust means for exhausting the gas in the control space, exhaust means for exhausting gas in the control space provided at an appropriate position in the control space, and a substantially central portion of the lower surface of the control space (hereinafter referred to as the A central portion formed as a “control center” and communicating with the evacuation system, a groove formed on the lower surface of the control space and extending from the suction hole, and formed on a lower surface of the control space. A plurality of radial control orifices for controlling the radial position of the thin plate-shaped substrate, and a plurality of jet holes for controlling the circumferential position of the thin plate-shaped substrate formed on the lower surface of the control space. A plurality of circumferential control jet holes; a plurality of floating jet holes formed on the lower surface of the control space for floating the thin plate-like base; and a thin plate formed on the lower surface of the control space. A plurality of stop / delivery ejection holes for stopping the base or sending it to the next unit, and wherein the groove has a peripheral edge of the thin plate when the center of the thin plate comes to the control center. A thin plate-shaped substrate transfer device, which is closed inside. 2. A plurality of levitation ejection holes formed on the lower surface of the transfer space are substantially perpendicular to the traveling direction of the thin plate-like base,
2. The apparatus according to claim 1, wherein the apparatus is open upward. 3. The thin-plate base according to claim 1, wherein the plurality of radial control orifices are formed on a peripheral edge of the thin-plate base when the center of the thin-plate base is located on the control center. Thin plate-shaped substrate transfer device. 4. The plurality of radial direction control ejection holes are formed at the periphery of the sheet-shaped base when the center of the sheet-shaped base is located on the control center, and slightly outside the periphery of the sheet-shaped base. 4. The thin plate-shaped substrate transfer device according to claim 3, wherein: 5. A plurality of radial control ejection holes formed on the periphery of the thin plate-like base and a plurality of radial control injection holes formed slightly outside the periphery of the thin plate-like base. 5. The thin plate-shaped substrate transfer device according to claim 4, wherein the device is connected to the gas supply system of (1). 6. The group of circumferential control jet holes is formed in the peripheral edge of the sheet-shaped base when the center of the sheet-shaped base comes to the control center, and opens upward in the circumferential direction clockwise. And a plurality of holes that open upward in the counterclockwise direction in the circumferential direction. The holes for control in the circumferential direction open clockwise, and the holes that open in the counterclockwise direction. The thin-plate-shaped substrate transfer device according to claim 1, wherein the discharge port for controlling the circumferential direction is connected to a separate gas supply system. 7. The apparatus according to claim 1, wherein at least a surface of the transfer unit, the control unit, and the gas supply system, which comes into contact with the gas, is a mirror-finished surface having an Rmax of 1 μm or less without a work-affected layer. Thin plate-shaped substrate transfer device. 8. The passivation film according to claim 7, wherein the mirror-finished surface is a surface of a passivation film formed by heat-treating stainless steel in an oxidizing gas having an impurity concentration of several ppb or less. Thin plate-shaped substrate transfer device. 9. The transfer of a thin substrate according to claim 1, wherein an ion generating means for generating ions by electrons emitted by the photoelectric effect is provided in the transfer space and / or the control space. apparatus. 10. The suction hole is connected to a gas supply system via a vacuum exhaust pump, a circulation pump, a filter, and a gas purification device, and the exhaust unit of the transfer unit and the control unit includes a circulation pump, a filter, and a gas purification device. 2. The apparatus according to claim 1, wherein the apparatus is connected to a gas supply system via a gas path, and the path of the gas is a system closed from standby. 11. A passive part having a mirror-finished surface with an Rmax of 1 μm or less formed by heat treatment in an oxidizing gas having an impurity concentration of several ppb or less in a portion in contact with a carrier gas of an evacuation pump and a circulation pump. 11. The thin plate-shaped substrate transfer device according to claim 10, wherein the film is made of stainless steel formed on the surface. 12. The apparatus according to claim 1, wherein the inner diameter of each ejection hole is 1.0 mm or less. 13. The thin plate-shaped substrate transfer device according to claim 1, wherein a pocket portion is provided around the ejection hole. 14. The thin plate-shaped substrate transfer device according to claim 1 , wherein a cutout is provided in the ejection hole in a direction in which the substrate is moved .