JP2888455B2 - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP2888455B2 JP2888455B2 JP3011389A JP1138991A JP2888455B2 JP 2888455 B2 JP2888455 B2 JP 2888455B2 JP 3011389 A JP3011389 A JP 3011389A JP 1138991 A JP1138991 A JP 1138991A JP 2888455 B2 JP2888455 B2 JP 2888455B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- light emitting
- mode
- emitting device
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/1835—Non-circular mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、偏波面が制御できる垂
直キャビティの面発光形の半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical cavity surface emitting semiconductor light emitting device whose polarization plane can be controlled.
【０００２】[0002]
【従来の技術】基板と垂直方向に共振器が形成された面
発光形の半導体レーザは、結晶軸で定まる互いに直交す
る２方向の直線偏波で発振する。例えば、（００１）基
板上の面発光形レーザでは、２つの〔１１０〕方向に沿
った偏波が観測されている。2. Description of the Related Art A surface-emitting type semiconductor laser in which a resonator is formed in a direction perpendicular to a substrate oscillates with linearly polarized waves in two directions orthogonal to each other and determined by a crystal axis. For example, in a surface emitting laser on a (001) substrate, polarized waves along two [110] directions are observed.
【０００３】[0003]
【発明が解決しようとする課題】発光面の形状が点対称
である場合、近接素子間でも偏波方向がばらついたり、
あるいは、単独素子でも通電電流を増加させてゆくと、
偏波面が変動することが、しばしば観測されている。偏
波面の安定化には、発光面の対称性をなくすことが有効
であり、発光面を楕円形状あるいは長方形にすること
で、１つの方向の直線偏波だけを選択的に発振させるこ
とができる。ただ、２つの偏波方向を任意に制御できる
構造の面発光形半導体レーザは未だ提案されていない。
本発明は上記の欠点を改善するために提案されたもの
で、その目的は半導体発光装置における制御用電極へ流
す電流をオン、オフすることによって、出力光の偏波方
向を制御できる半導体発光装置を提供することにある。In the case where the shape of the light emitting surface is point symmetric, the polarization direction varies between adjacent elements,
Alternatively, if the energizing current is increased even with a single element,
Variations in the polarization plane are often observed. To stabilize the polarization plane, it is effective to eliminate the symmetry of the light-emitting surface. By making the light-emitting surface elliptical or rectangular, only linear polarization in one direction can be selectively oscillated. . However, a surface emitting semiconductor laser having a structure capable of arbitrarily controlling two polarization directions has not yet been proposed.
SUMMARY OF THE INVENTION The present invention has been proposed in order to improve the above-mentioned drawbacks, and an object of the present invention is to turn on and off a current flowing to a control electrode in a semiconductor light emitting device, thereby controlling a polarization direction of output light. Is to provide.
【０００４】[0004]
【課題を解決するための手段】上記の目的を達成するた
め本発明は基板と垂直な方向に共振器が形成された面発
光形の半導体レーザにおいて、活性層を含むメサ領域の
発光面の形状がＬ字、Ｔ字あるいは十字形をしており、
ｐ側およびｎ側の何れかの電極が、電気的に独立に制御
できる少なくとも２つ以上の領域から形成されているこ
とを特徴とする半導体発光装置を発明の要旨とするもの
である。In order to achieve the above object, the present invention relates to a surface emitting semiconductor laser having a resonator formed in a direction perpendicular to a substrate, wherein a light emitting surface of a mesa region including an active layer is formed. Is L-shaped, T-shaped or cross-shaped,
An object of the present invention is to provide a semiconductor light emitting device in which any one of the p-side and n-side electrodes is formed of at least two or more regions that can be independently controlled electrically.
【０００５】[0005]
【作用】本発明では、直交する２方向に沿って、同一基
板上に、並列に、２つの面発光形レーザ（レーザＡ、レ
ーザＢ）を配置し、レーザＡは蒸着金属の一部を除去し
た低反射率の領域を含んでおり、一方、レーザＢは全面
に電極金属を蒸着し、全面が高反射率な共振器領域で構
成されている。このため、レーザＡはレーザＢに比べ
て、発振しきい値密度および出力光密度は劣るように作
製されている。最初、共振器の利得の小さいレーザだけ
に通電し、レーザ発振（モード１）させておく。この場
合の出力光は、直線偏波である。ついで、レーザＢにレ
ーザ発振させるに充分足る制御信号を印加させると、レ
ーザ発振が起こる。この場合の発振モードは、レーザＢ
およびレーザＡの内、レーザＢの幅でレーザＡの領域に
延長させた領域を境界とした基本モード（モード２）と
なる。モード１とモード２とは互いに直交している。According to the present invention, two surface emitting lasers (laser A and laser B) are disposed in parallel on the same substrate along two orthogonal directions, and the laser A removes a part of the vapor deposition metal. On the other hand, the laser B has an electrode metal deposited on the entire surface thereof, and the entire surface of the laser B is formed of a high-reflectance resonator region. For this reason, the laser A is manufactured so that the oscillation threshold density and the output light density are inferior to the laser B. Initially, only a laser having a small gain of the resonator is energized to cause laser oscillation (mode 1). The output light in this case is linearly polarized. Next, when a control signal sufficient for causing the laser B to oscillate is applied to the laser B, laser oscillation occurs. The oscillation mode in this case is laser B
And a basic mode (mode 2) having a boundary extending from the laser A to the laser A by the width of the laser B. Mode 1 and mode 2 are orthogonal to each other.
【０００６】モード２はレーザＢおよびレーザＡの一部
に架けての高反射率の領域だけで構成されており、一部
に低反射率な領域を含むレーザＡ領域だけで発振してい
るモード１に比べて、共振器利得が大きい。したがっ
て、一旦モード２での発振が起こると、このモードでの
光子密度はモード１に比べて高くなり易く、レーザＡの
共振器内にモード２が存在すると、レーザＡの領域での
キャリアは、モード１よりも共振器利得の大きいモード
２の光と相互作用が活発になり、モード１の光は光のク
エンチ現象（衰弱現象）が起こる。レーザＢへ供給する
電流値を大きくすると、モード１での発振を全く停止さ
せ、モード１と直交方向に偏波しているモード２だけの
出力光を得ることができる。[0006] Mode 2 is a mode in which the laser B and the laser A only include a high-reflectance region over a part of the laser A, and the mode 2 oscillates only in the laser A region including a low-reflectance region. As compared with 1, the resonator gain is large. Therefore, once oscillation in mode 2 occurs, the photon density in this mode is likely to be higher than in mode 1, and if mode 2 is present in the resonator of laser A, carriers in the region of laser A are: Interaction with the light of mode 2 having a larger resonator gain than that of mode 1 becomes active, and the light of mode 1 undergoes a light quench phenomenon (depletion phenomenon). When the value of the current supplied to the laser B is increased, the oscillation in the mode 1 is completely stopped, and only the output light in the mode 2 polarized in the direction orthogonal to the mode 1 can be obtained.
【０００７】[0007]
【実施例】次に本発明の実施例について説明する。なお
実施例は一つの例示であって、本発明の精神を逸脱しな
い範囲で、種々の変更あるいは改良を行いうることは云
うまでもない。Next, an embodiment of the present invention will be described. The embodiment is merely an example, and it goes without saying that various changes or improvements can be made without departing from the spirit of the present invention.
【０００８】図１は本発明の第１の実施例の発光面の配
置を示すものでレーザＡとレーザＢとはＬ字形に配置さ
れている。すなわち発光面は、〔１１０〕および、FIG. 1 shows an arrangement of light emitting surfaces according to a first embodiment of the present invention. Lasers A and B are arranged in an L-shape. That is, the light emitting surface is [110] and
【数１】 〔１０〕 に平行に形成された６μｍ×３μｍの長方形が２つ組み
合わされたＬ字形状である。斜線領域に蒸着金属１，１
ａが配置されている。この実施例で使用している基板は
（００１）のｎ形ＧａＡｓ基板であり、ＡｕＺｎ／Ａｕ
の薄膜で構成された蒸着金属１及び１ａがｐ側電極を兼
ねている。これらは、ＡｌＡｓ／ＧａＡｓを１０層積層
した半導体多層膜上に蒸着されており、蒸着面の反射率
は約９８％で、半導体多層膜だけの領域の反射率より約
３０％高かった。レーザＡの領域には部分的に金属が蒸
着されていない領域１０が形成されている。また基板７
の下面に窓９が形成されている。The L-shape is formed by combining two 6 μm × 3 μm rectangles formed in parallel with [10]. Metallization 1,1 in the shaded area
a is arranged. The substrate used in this example is an (001) n-type GaAs substrate, and AuZn / Au
The metallized metal 1 and 1a composed of the thin film also serves as the p-side electrode. These are deposited on a semiconductor multilayer film in which 10 layers of AlAs / GaAs are stacked, and the reflectance of the deposition surface is about 98%, which is about 30% higher than the reflectance of the region of the semiconductor multilayer film alone. In the region of the laser A, a region 10 in which metal is not partially deposited is formed. Also, the substrate 7
A window 9 is formed on the lower surface of the.
【０００９】図２は図１においてＸ−Ｙ線に沿った断面
図を示す。図において１，１ａはｐ側電極、２はｐ側高
反射半導体層、３はｐ形ＧａＡｓクラッド層、４はＩｎ
ＧａＡｓＳＱＷ層、５はｎ形ＧａＡｓクラッド層、６は
ｎ形高反射半導体層、７はｎ形ＧａＡｓ基板、８はｎ側
電極、９は出力窓を示す。活性層にはＩｎＧａＡｓの歪
超格子を用いた構造であり、ＡｌＧａＡｓクラッド層３
をふくめた共振器長を発振波長（０．９８μｍ）と等し
く選んだ構造である。基板側の反射鏡は、ＡｌＡｓ／Ｇ
ａＡｓを２８．５層堆積させた構造であり、反射率は約
９５％である。レーザＡだけに通電した時のしきい値電
流は３ｍＡであった。レーザＡを全面電極で形成した構
造のレーザは１．２ｍＡのしきい値であり、金属蒸着が
一部分欠削していることによって、反射損失が増大して
いることが分かる。FIG. 2 is a sectional view taken along the line XY in FIG. In the figures, 1 and 1a are p-side electrodes, 2 is a p-side high-reflection semiconductor layer, 3 is a p-type GaAs cladding layer, and 4 is In.
A GaAsSQW layer, 5 is an n-type GaAs cladding layer, 6 is an n-type highly reflective semiconductor layer, 7 is an n-type GaAs substrate, 8 is an n-side electrode, and 9 is an output window. The active layer has a structure using a strained superlattice of InGaAs, and has an AlGaAs cladding layer 3.
Is selected to be equal to the oscillation wavelength (0.98 μm). The reflection mirror on the substrate side is AlAs / G
This is a structure in which 28.5 layers of aAs are deposited, and the reflectance is about 95%. The threshold current when only the laser A was energized was 3 mA. The laser having a structure in which the laser A is formed by the entire surface electrode has a threshold value of 1.2 mA, and it can be seen that the reflection loss is increased due to the partial lack of the metal deposition.
【００１０】この実施例のレーザＡの光出力は、６ｍＡ
通電時で約１ｍＷで、〔１１０〕方向の直線偏波による
基本モード発振であった。レーザＡに４ｍＡ通電してい
る状態で、レーザＢにも３ｍＡの電流を供給すると、レ
ーザＡの光強度は約３ｍＷに増加するとともに、The light output of the laser A of this embodiment is 6 mA
At the time of energization, the fundamental mode oscillation was about 1 mW due to linear polarization in the [110] direction. When a current of 3 mA is also supplied to the laser B while 4 mA is supplied to the laser A, the light intensity of the laser A increases to about 3 mW,
【数１】に直線偏光した基本モード発振の光出力が得ら
れた。したがって、アナライザーを通して観測した光出
力は、レーザＢへの電流供給によって、２０ｄＢ以上の
消光比で強度変調されている。## EQU1 ## A linearly polarized fundamental mode oscillation light output was obtained. Therefore, the light output observed through the analyzer is intensity-modulated by the current supply to the laser B at an extinction ratio of 20 dB or more.
【００１１】レーザＢの領域をレーザＡに比べて充分に
大きくすると、どちらも全面電極を形成した素子でも同
様なクエンチ現象が起こる。したがって、制御電力が大
きくなる欠点を無視すれば、より簡単な構造で、電流注
入による偏波面のスイッチングが実現できる。レーザＢ
に注入する電流は、高周波信号を供給しても、基本的な
スイッチング動作には何等問題はない。アナライザーあ
るいは偏波保持ファイバと組み合わせることで、１０Ｇ
ｂ／ｓの変調が実現できる。When the area of the laser B is made sufficiently larger than that of the laser A, the same quenching phenomenon occurs in the element in which both electrodes are formed. Therefore, if the drawback that the control power becomes large is ignored, the polarization plane switching by current injection can be realized with a simpler structure. Laser B
Even if the current injected into the circuit supplies a high-frequency signal, there is no problem in the basic switching operation. 10G by combining with analyzer or polarization maintaining fiber
b / s modulation can be realized.
【００１２】本実施例では、蒸着金属を電極として用い
た場合について説明したが、電極形成と切り放して、発
光面上の蒸着金属を単なる反射鏡として用いることがで
きる。したがって、本実施例は、誘導体多層膜を反射鏡
とした構造にも充分に適用できる。In this embodiment, the case where the metal deposited is used as an electrode has been described. However, the electrode formed and cut off can be used as a simple reflecting mirror on the light emitting surface. Therefore, this embodiment can be sufficiently applied to a structure in which the dielectric multilayer film is used as a reflecting mirror.
【００１３】図３は本発明の第２の実施例を示すもの
で、レーザＡの両側に夫々レーザＢが配置されている十
字形の場合を示し、第１の実施例と同様の効果を有す
る。FIG. 3 shows a second embodiment of the present invention, which shows a cross-shaped case in which lasers B are disposed on both sides of a laser A, respectively, and has the same effect as that of the first embodiment. .
【００１４】図４は本発明の第３の実施例を示すもの
で、メサ領域の発光面の形状がＴ字形を出す場合で、第
１の実施例と同様の効果を有する。FIG. 4 shows a third embodiment of the present invention, in which the light emitting surface of the mesa region has a T-shape, and has the same effect as the first embodiment.
【００１５】この実施例は、半導体レーザの波形には無
関係であり、長波長帯系でもＧａＡｌＡｓ／ＧａＡｓ系
でも全く同様な効果が期待できる。また、使用基板の導
電形にも依存しない。ｐ形基板、半絶縁性基板等にも構
造の最適化によって基本的には適用てできる。なお上記
の実施例はメサ型の場合について説明したが、本発明は
これに限定されることなく、活性層は電流狭窄層によっ
て埋め込まれた構造であってもよい。This embodiment is irrelevant to the waveform of the semiconductor laser, and the same effect can be expected in both the long wavelength band system and the GaAlAs / GaAs system. Also, it does not depend on the conductivity type of the substrate used. Basically, it can be applied to a p-type substrate, a semi-insulating substrate, and the like by optimizing the structure. Although the above embodiment has been described with reference to the case of the mesa type, the present invention is not limited to this, and the active layer may have a structure embedded with a current confinement layer.
【００１６】[0016]
【発明の効果】本発明では、共振器内の発振横モードの
クエンチ現象を利用して、制御用電極（レーザＢ）へ流
す電流をオン・オフ制御することによって、出力光の偏
波方向を９０度回転させることができる。したがって、
本発明の半導体発光装置からのレーザー出力を、偏波依
存性を有する適当な検出器を通すことに依って、電流制
御の強度変調に変換させることができる効果を有する。According to the present invention, the current flowing to the control electrode (laser B) is turned on / off by utilizing the quench phenomenon of the oscillation transverse mode in the resonator, thereby changing the polarization direction of the output light. Can be rotated 90 degrees. Therefore,
By passing the laser output from the semiconductor light emitting device of the present invention through an appropriate detector having polarization dependency, there is an effect that the laser output can be converted into current control intensity modulation.
【図１】本発明の発光面の第１の実施例の配置図を示
す。FIG. 1 shows a layout of a first embodiment of a light emitting surface of the present invention.
【図２】本発明の第１実施例の断面構造図を示す。FIG. 2 is a sectional structural view of a first embodiment of the present invention.
【図３及び４】本発明の他の実施例を示す。3 and 4 show another embodiment of the present invention.
１，１ａ ｐ側電極 ２ ｐ側高反射半導体層 ３ ｐ形ＧａＡｓクラッド層 ４ ＩｎＧａＡｓＳＱＷ層 ５ ｎ形ＧａＡｓクラッド層 ６ ｎ形高反射半導体層 ７ ｎ形ＧａＡｓ基板 ８ ｎ側電極 ９ 出力窓 １０ 金属電極の欠除部分 Reference Signs List 1, 1a p-side electrode 2 p-side high reflection semiconductor layer 3 p-type GaAs cladding layer 4 InGaAsSQW layer 5 n-type GaAs cladding layer 6 n-type high reflection semiconductor layer 7 n-type GaAs substrate 8 n-side electrode 9 output window 10 metal electrode Missing part of
Claims (2)
面発光形の半導体レーザにおいて、活性層を含むメサ領
域の発光面の形状がＬ字、Ｔ字あるいは十字形をしてお
り、ｐ側およびｎ側の何れかの電極が、電気的に独立に
制御できる少なくとも２つ以上の領域から形成されてい
ることを特徴とする半導体発光装置。1. A surface emitting semiconductor laser in which a resonator is formed in a direction perpendicular to a substrate, wherein a light emitting surface of a mesa region including an active layer has an L shape, a T shape, or a cross shape. A semiconductor light emitting device, wherein at least one of the p-side electrode and the n-side electrode is formed of at least two or more regions that can be electrically independently controlled.
には、空間的に蒸着金属の一部に欠除部が配置されてい
ることを特徴とする請求項１記載の半導体発光装置。2. The semiconductor light emitting device according to claim 1, wherein said at least one of the upper and lower surfaces of the mesa region is provided with a spatially cutout portion in a part of the vapor-deposited metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3011389A JP2888455B2 (en) | 1991-01-07 | 1991-01-07 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3011389A JP2888455B2 (en) | 1991-01-07 | 1991-01-07 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04242989A JPH04242989A (en) | 1992-08-31 |
| JP2888455B2 true JP2888455B2 (en) | 1999-05-10 |
Family
ID=11776657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3011389A Expired - Fee Related JP2888455B2 (en) | 1991-01-07 | 1991-01-07 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2888455B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5345462A (en) * | 1993-03-29 | 1994-09-06 | At&T Bell Laboratories | Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity |
| JP3766976B2 (en) * | 1994-01-20 | 2006-04-19 | セイコーエプソン株式会社 | Surface emitting semiconductor laser device and manufacturing method thereof |
| US5778018A (en) * | 1994-10-13 | 1998-07-07 | Nec Corporation | VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices |
| JP3618451B2 (en) * | 1996-03-28 | 2005-02-09 | オリンパス株式会社 | Optical displacement sensor |
-
1991
- 1991-01-07 JP JP3011389A patent/JP2888455B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04242989A (en) | 1992-08-31 |
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