JP2789714B2 - Voltage-dependent nonlinear resistor porcelain composition and method for manufacturing varistor - Google Patents
Voltage-dependent nonlinear resistor porcelain composition and method for manufacturing varistorInfo
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- JP2789714B2 JP2789714B2 JP1246818A JP24681889A JP2789714B2 JP 2789714 B2 JP2789714 B2 JP 2789714B2 JP 1246818 A JP1246818 A JP 1246818A JP 24681889 A JP24681889 A JP 24681889A JP 2789714 B2 JP2789714 B2 JP 2789714B2
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は電気機器，電子機器で発生する異常高電圧，
ノイズ，静電気などから機器の半導体及び回路を保護す
るためのコンデンサ特性とバリスタ特性を有する電圧依
存性非直線抵抗体磁器組成物およびバリスタの製造方法
に関するものである。The present invention relates to an electric device, an abnormal high voltage generated in an electronic device,
The present invention relates to a voltage-dependent nonlinear resistor porcelain composition having capacitor characteristics and varistor characteristics for protecting semiconductors and circuits of equipment from noise, static electricity, and the like, and a method for manufacturing a varistor.
従来の技術 従来、各種の電気機器，電子機器における異常高電圧
の吸収，ノイズの除去，火花消去，静電気対策のために
電圧依存性非直線抵抗特性を有するSiCバリスタや、ZnO
系バリスタなどが使用されている。このようなバリスタ
の電圧−電流特性は近似的に次式のように表すことがで
きる。2. Description of the Related Art Conventionally, SiC varistors having a voltage-dependent nonlinear resistance characteristic for absorbing abnormally high voltage, eliminating noise, eliminating sparks, and preventing static electricity in various electric and electronic devices, and ZnO.
System varistors are used. The voltage-current characteristics of such a varistor can be approximately expressed by the following equation.
Ｉ＝（V/C）α ここで、Ｉは電流、Ｖは電圧、Ｃはバリスタ固有の定
数、αは電圧−電流非直線指数である。I = (V / C) α where I is current, V is voltage, C is a varistor-specific constant, and α is voltage-current nonlinear exponent.
SiCバリスタのαは２〜７程度、ZnO系バリスタではα
が50にもおよぶものがある。このようなバリスタは比較
的高い電圧の吸収には優れた性能を有しているが、誘電
率が低く、固有の静電容量が小さいため、バリスタ電圧
以下の比較的低い電圧の吸収にはほとんど効果を示さ
ず、また誘電損失tanδが５〜10％と大きい。Α of the SiC varistor is about 2 to 7, and α of the ZnO varistor.
There are as many as 50. Such varistors have excellent performance in absorbing relatively high voltages, but because of their low dielectric constant and small inherent capacitance, they are almost insensitive to absorbing relatively low voltages below the varistor voltage. No effect is exhibited, and the dielectric loss tan δ is as large as 5 to 10%.
一方、これらの低電圧のノイズなどの除去には見かけ
の誘電率が５×104程度で、tanδが１％前後の半導体コ
ンデンサが利用されている。しかし、このような半導体
コンデンサはサージなどによりある限度以上の電圧また
は電流が印加されると、静電容量が減少したり破壊した
りして、コンデンサとしての機能を果たさなくなったり
する。On the other hand, a semiconductor capacitor having an apparent dielectric constant of about 5 × 10 4 and a tan δ of about 1% is used for removing these low-voltage noises and the like. However, when a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance is reduced or destroyed, and the function as a capacitor is not fulfilled.
そこで最近になってSrTiO3を主成分とし、バリスタ特
性とコンデンサ特性の両方の機能を有するものが開発さ
れ、コンピュータなどの電子機器におけるIC,LSIなどの
半導体素子の保護に利用されている。In recent years, a device having SrTiO 3 as a main component and having both functions of a varistor characteristic and a capacitor characteristic has been developed, and is used for protecting semiconductor elements such as ICs and LSIs in electronic devices such as computers.
発明が解決しようとする課題 上記のSrTiO3を主成分とするバリスタとコンデンサの
両方の機能を有する素子は、ZnO系バリスタに比べ誘電
率が約10倍と大きいが、αやサージ耐量が小さく、バリ
スタ電圧を低くすると特性が劣化しやすいといたった欠
点を有していた。Problems to be Solved by the Invention An element having both functions of a varistor and a capacitor mainly composed of SrTiO 3 as described above has a dielectric constant of about 10 times as large as that of a ZnO-based varistor, but has a small α and a surge withstand capacity, If the varistor voltage is lowered, the characteristics are liable to be deteriorated.
そこで本発明では、誘電率が大きく、バリスタ電圧が
低く、αが大きいと共にサージ耐量が大きい電圧依存性
非直線抵抗体磁器組成物およびバリスタの製造方法を提
供することを目的とするものである。Accordingly, an object of the present invention is to provide a voltage-dependent nonlinear resistor porcelain composition having a large dielectric constant, a low varistor voltage, a large α and a large surge withstand capability, and a method for manufacturing a varistor.
課題を解決するための手段 上記の問題点を解決するために本発明では、 Sr1-xBaxTiO3（0.001≦ｘ≦0.300）（以下第１成分と
呼ぶ）を90.000〜99.998mol％,Nb2O5,Ta2O5,WO3,Dy2O3,
Y2O3,La2O3,CeO2,Sm2O3,Pr6O11,Nd2O3のうち少なくとも
１種類以上（以下第２成分と呼ぶ）を0.001〜5.000mol
％,Al2O3,Sb2O3,BaO,BeO,PbO,B2O3,Cr2O3,Fe2O3,CdO,K2
O,CaO,Co2O3,CuO,Cu2O,Li2O,LiF,MgO,MnO2,MoO3,Na2O,N
aF,NiO,Rh2O3,SeO2,Ag2O,SiO2,SiC,SrO,Tl2O3,ThO2,TiO
2,V2O5,Bi2O3,ZnO,ZrO2,SnO2のうち少なくとも１種類以
上（以下第３成分と呼ぶ）を0.001〜5.000mol％含有し
てなる主成分100重量部と、SrTiO360.000〜32.500mol
％,SiO240.000〜67.5mol％からなる混合物を1200〜1300
℃で焼成してなる添加物（以下第４成分と呼ぶ）0.001
〜10.000重量部とからなる電圧依存性非直線抵抗体磁器
組成物を得ることにより、問題を解決しようとするもの
である。Means for Solving the Problems In order to solve the above problems, in the present invention, Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) (hereinafter referred to as the first component) is 90.000 to 99.998 mol%, Nb 2 O 5 , Ta 2 O 5 , WO 3 , Dy 2 O 3 ,
Y 2 O 3, La 2 O 3, at least one or more of CeO 2, Sm 2 O 3, Pr 6 O 11, Nd 2 O 3 (hereinafter referred to as the second component) 0.001～5.000Mol
%, Al 2 O 3 , Sb 2 O 3 , BaO, BeO, PbO, B 2 O 3 , Cr 2 O 3 , Fe 2 O 3 , CdO, K 2
O, CaO, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, LiF, MgO, MnO 2 , MoO 3 , Na 2 O, N
aF, NiO, Rh 2 O 3 , SeO 2 , Ag 2 O, SiO 2 , SiC, SrO, Tl 2 O 3 , ThO 2 , TiO
2, V 2 O 5, Bi 2 O 3, ZnO, ZrO 2, of SnO 2 at least one or more (hereinafter third referred to as components) a 0.001～5.000Mol% comprising 100 parts by weight of the main component and, SrTiO 3 60.000-32.500mol
%, SiO 2 from 40.000 to 67.5 mol%.
Additive fired at ℃ (hereinafter referred to as fourth component) 0.001
It is intended to solve the problem by obtaining a voltage-dependent nonlinear resistor porcelain composition comprising up to 10.000 parts by weight.
また、上記主成分と添加物とからなる組成物を1100℃
以上で焼成したバリスタの製造方法、さらにはその焼成
後、還元性雰囲気中で1200℃以上で焼成し、その後酸化
性雰囲気中で900〜1300℃で焼成したバリスタの製造方
法を提供しようとするものである。Further, the composition comprising the above main component and additives is heated at 1100 ° C.
A method of manufacturing a varistor fired as described above, and further, a method of manufacturing a varistor fired at 1200 ° C. or more in a reducing atmosphere after firing, and then fired at 900 to 1300 ° C. in an oxidizing atmosphere. It is.
作用 上記の発明において、第１成分は主たる成分であり、
SrTiO3のSrの一部をCaで置換することにより、粒界に形
成される高抵抗層がサージに対して強くなる。Action In the above invention, the first component is a main component,
By substituting a part of Sr of SrTiO 3 with Ca, the high resistance layer formed at the grain boundary becomes strong against surge.
また、第２成分は主に第１成分の半導体化を促進する
金属酸化物である。さらに、第３成分は誘電率，α，サ
ージ耐量の改善に寄与するものであり、第４成分はバリ
スタ電圧の低下，誘電率の改善に有効なものである。特
に、第４成分は融点が1230〜1250℃と比較的低いため、
誘電前後の温度で焼成すると液相となり、その他の成分
の反応を促進すると共に粒子の成長を促進する。そのた
め粒界部分に第３成分が偏析しやすくなり、粒界が高抵
抗化され易くなり、バリスタ機能およびコンデンサ機能
が改善される。また、粒成長が促進されるためバリスタ
電圧が低くなり、粒径の均一性が向上するため特性の安
定性が良くなり、特にサージ耐量が改善される。The second component is a metal oxide that mainly promotes the conversion of the first component into a semiconductor. Further, the third component contributes to the improvement of the dielectric constant, α, and surge withstand amount, and the fourth component is effective for the reduction of the varistor voltage and the improvement of the dielectric constant. In particular, since the fourth component has a relatively low melting point of 1230 to 1250 ° C,
When it is fired at a temperature before and after the dielectric, it becomes a liquid phase, and promotes the reaction of other components and the growth of particles. Therefore, the third component is easily segregated in the grain boundary portion, the grain boundary is easily increased, and the varistor function and the capacitor function are improved. Further, since the grain growth is promoted, the varistor voltage is reduced, and the uniformity of the grain size is improved, so that the stability of the characteristics is improved, and in particular, the surge withstand capability is improved.
実施例 以下に実施例を挙げて本発明を具体的に説明する。Examples Hereinafter, the present invention will be described specifically with reference to examples.
まず、SrTiO3,SiO2を下記の第１表に示すように組成
比を種々変えて秤量し、ボールミルなどで24Hr混合す
る。次に、乾燥した後、下記の第１表に示すように温度
を種々変えて焼成し、再びボールミルなどで24Hr粉砕し
た後、乾燥し第４成分とする。次いで、第１成分，第２
成分，第３成分，第４成分を下記の第１表に示した組成
比になるように秤量し、ボールミルなどで30Hr混合した
後、乾燥し、ポリビニルアルコールなどの有機バインダ
ーを10wt％添加して造粒した後、１（t/cm2）のプレス
圧力で10φ×1t（mm）の円板状に成形し、1100℃で4Hr
焼成し脱バインダーする。次に、第１表に示したように
温度と時間を種々変えて焼成（第１焼成）し、その後還
元性雰囲気、例えば、N2:H2＝9:1のガス中で温度と時間
を種々変えて焼成（第２焼成）する。さらにその後、酸
化性雰囲気中で温度と時間を種々変えて焼成（第３焼
成）する。First, SrTiO 3 and SiO 2 are weighed at various composition ratios as shown in Table 1 below and mixed for 24 hours by a ball mill or the like. Next, after being dried, it is fired at various temperatures as shown in Table 1 below, again ground for 24 hours by a ball mill or the like, and then dried to obtain a fourth component. Then, the first component, the second
The components, the third component, and the fourth component are weighed so as to have the composition ratios shown in Table 1 below, mixed for 30 hours with a ball mill or the like, dried, and added with an organic binder such as polyvinyl alcohol at 10 wt%. After granulation, it is formed into a 10φ × 1 t (mm) disk at a press pressure of 1 (t / cm 2 ), and 4 hours at 1100 ° C.
Baking and debinding. Next, as shown in Table 1, firing is performed at various temperatures and times (first firing), and then the temperature and time are reduced in a reducing atmosphere, for example, a gas of N 2 : H 2 = 9: 1. The firing (second firing) is performed with various changes. After that, firing (third firing) is performed in an oxidizing atmosphere with various changes in temperature and time.
上記のようにして得られた第１図および第２図に示す
焼結体１の両平面に外周を残すようにしてAgなどの導電
性ペーストをスクリーン印刷などにより塗布し、570℃,
5minで焼成し、電極2,3を形成する。次に、半田などに
よりリード線（図示せず）を取り付け、エポキシなどの
樹脂（図示せず）を塗装する。このようにして得られた
素子の特性を下記の第２表に示す。 A conductive paste such as Ag is applied by screen printing or the like so as to leave outer peripheries on both planes of the sintered body 1 shown in FIGS. 1 and 2 obtained as described above.
Baking for 5 minutes to form electrodes 2 and 3. Next, a lead wire (not shown) is attached by soldering or the like, and a resin (not shown) such as epoxy is applied. The characteristics of the device thus obtained are shown in Table 2 below.
なお、第２表において、誘電率は1KHzでの静電容量か
ら計算したものであり、αは α＝1/log（V10mA/V1mA） （ただし、V1mA,V10mAは1mA,10mAの電流を流した時に素
子の両端にかかる電圧でもある。）で評価した。また、
サージ耐量はパルス性の電流を印加した後のV1mAの変化
率が±10％以内である時の最大のパルス性電流値により
評価している。In Table 2, the permittivity is calculated from the capacitance at 1 KHz, and α is α = 1 / log ( V10mA / V1mA ) (where V1mA and V10mA are 1mA and 10mA, respectively). It is also a voltage applied to both ends of the device when a current is applied.) Also,
The surge withstand capability is evaluated by the maximum pulse current value when the rate of change of V1mA after application of the pulse current is within ± 10%.
本発明において、第１成分のSr1-xBaxTiO3のｘの範囲
を規定したのは、ｘが0.001よりも小さいと効果を示さ
ず、0.300を超えると格子欠陥が発生しにくくなるため
半導体化が促進されず、粒界にBaが単一相として析出す
るため、組織が不均一になり、V1mAが高くなりすぎて特
性が劣化するためである。さらに、第２成分は0.001mol
％未満では効果を示さず、5.000mol％を超えると粒界に
偏析して粒界の高抵抗化を抑制し、粒界に第２相を形成
することから特性が劣化するためである。また、第３成
分は0.001mol％未満では効果を示さず、5.000mol％を超
えると粒界に偏析して第２相を形成することから特性が
劣化するためである。そして、第４成分はSrTiO3とSiO2
の２成分系の相図のなかで最も融点の低い領域の物質で
あり、その範囲外では融点が高くなるためである。ま
た、第４成分の添加量は、0.001重量部未満では効果を
示さず、10.000重量部を超えると粒界の抵抗は高くなる
が粒界の幅が厚くなるため、静電容量が小さくなると共
にV1mAが高くなり、サージに対して弱くなるためであ
る。さらに、第４成分の焼成温度を規定したのは、低融
点の第４成分が合成される温度が1200℃であるためであ
る。そして、第１焼成の温度を規定したのは、第４成分
の融点が1230〜1250℃であるため、1100℃以上の温度で
焼成すると第４成分が液相に近い状態になって焼成が促
進されるためであり、1100℃未満では第４成分による液
相焼結効果がないためである。また、第２焼成の温度を
規定したのは、1200℃未満では第１焼成後の焼結体が十
分に還元されず、バリスタ特性，コンデンサ特性が共に
劣化するためである。さらに、第３焼成の温度を規定し
たのは、900℃未満では粒界の高抵抗化が十分に進まな
いため、V1mAが低くなりすぎバリスタ特性が劣化するた
めであり、1300℃を超えると静電容量が小さくなりすぎ
コンデンサ特性が劣化するためである。また、第１焼成
の雰囲気は酸化性雰囲気でも還元性雰囲気でも同様の効
果があることを確認した。 In the present invention, the reason for defining the range of x of the first component Sr 1-x Ba x TiO 3 is that if x is smaller than 0.001, no effect is exhibited, and if x exceeds 0.300, lattice defects are less likely to occur. This is because the formation of a semiconductor is not promoted and Ba precipitates as a single phase at the grain boundary, resulting in a non-uniform structure and an excessively high V1mA , resulting in deterioration of characteristics. Furthermore, the second component is 0.001 mol
If the amount is less than 5.000 mol%, segregation at the grain boundary suppresses the increase in the resistance of the grain boundary, and a second phase is formed at the grain boundary, thus deteriorating the properties. If the content of the third component is less than 0.001 mol%, no effect is exhibited, and if the content exceeds 5.000 mol%, the second phase is formed by segregation at the grain boundary, so that the properties are deteriorated. And the fourth component is SrTiO 3 and SiO 2
This is because it is a substance in the region having the lowest melting point in the phase diagram of the two-component system, and the melting point becomes higher outside the range. When the amount of the fourth component is less than 0.001 part by weight, no effect is exhibited. When the amount exceeds 10.000 parts by weight, the resistance of the grain boundary is increased, but the width of the grain boundary is increased, so that the capacitance is reduced. This is because V1mA increases and becomes weak against surge. Further, the sintering temperature of the fourth component is specified because the temperature at which the low-melting fourth component is synthesized is 1200 ° C. The temperature of the first baking is specified because the melting point of the fourth component is 1230 to 1250 ° C. Therefore, when the baking is performed at a temperature of 1100 ° C or more, the fourth component is in a state close to a liquid phase and the baking is promoted. When the temperature is lower than 1100 ° C., the liquid phase sintering effect of the fourth component is not obtained. The reason why the temperature for the second firing is specified is that if the temperature is lower than 1200 ° C., the sintered body after the first firing is not sufficiently reduced, and both the varistor characteristics and the capacitor characteristics deteriorate. Furthermore, the reason why the third firing temperature is specified is that if the temperature is lower than 900 ° C., the resistance of the grain boundary does not sufficiently increase, so that V 1 mA becomes too low and the varistor characteristics deteriorate. This is because the capacitance becomes too small and the capacitor characteristics deteriorate. It was also confirmed that the same effect was obtained regardless of whether the atmosphere for the first firing was an oxidizing atmosphere or a reducing atmosphere.
また、本実施例では添加物の組み合わせについては、
第１成分としてSr1-xBaxTiO3（0.001≦ｘ≦0.300）、第
２成分としてNb2O5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,CeO2,
Sm2O3,Pr6O11,Nd2O3、第３成分としてAl2O3,PbO,B2O3,C
r2O3,Fe2O3,CdO,K2O,Co2O3,CuO,Cu2O,Li2O,MgO,MnO2,Mo
O3,NiO,SeO2,Ag2O,SiC,Tl2O3,Bi2O3,ZrO2、第４成分と
してSrTiO3,SiO2についてのみ示したが、第３成分とし
てSb2O3,BaO,BeO,CaO,LiF,Na2O,NaF,Rh2O3,SiO2,SrO,Th
O2,TiO2,V2O5,ZnO,SnO2を用いた組成の組み合わせでも
同様の効果が得られることを確認した。また、第２成分
および第４成分については、それぞれ２種類以上を所定
の範囲で組み合わせて用いても差支えないことを併せて
確認した。In this example, the combination of additives is as follows.
Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) as the first component, Nb 2 O 5 , Ta 2 O 5 , WO 3 , Dy 2 O 3 , Y 2 O 3 , La 2 O as the second component 3 , CeO 2 ,
Sm 2 O 3 , Pr 6 O 11 , Nd 2 O 3 , and as the third component Al 2 O 3 , PbO, B 2 O 3 , C
r 2 O 3 , Fe 2 O 3 , CdO, K 2 O, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, MgO, MnO 2 , Mo
Only O 3 , NiO, SeO 2 , Ag 2 O, SiC, Tl 2 O 3 , Bi 2 O 3 , ZrO 2 and SrTiO 3 and SiO 2 as the fourth component are shown, but Sb 2 O 3 as the third component , BaO, BeO, CaO, LiF, Na 2 O, NaF, Rh 2 O 3 , SiO 2 , SrO, Th
It has been confirmed that the same effect can be obtained even with a combination of compositions using O 2 , TiO 2 , V 2 O 5 , ZnO, and SnO 2 . It was also confirmed that two or more types of the second component and the fourth component may be used in combination within a predetermined range.
なお、第１成分，第２成分，第３成分，第４成分を11
00℃以上で焼成するだけでも第４成分が液相となり、そ
の他の成分の反応を促進すると共に粒子の成長を促進す
るため、粒界部分に第３成分が偏析しやすくなり、粒界
が高抵抗化され易くなり、バリスタ機能およびコンデン
サ機能が改善されるという効果がある。Note that the first, second, third, and fourth components are 11
The sintering at a temperature of at least 00 ° C. alone turns the fourth component into a liquid phase, which promotes the reaction of the other components and promotes the growth of the particles, so that the third component is easily segregated at the grain boundaries, and the grain boundaries are high. There is an effect that the resistance is easily changed and the varistor function and the capacitor function are improved.
発明の効果 以上に示したように本発明によれば、第４成分による
液相焼結効果により粒子径が大きいため、バリスタ電圧
が低く、誘電率εおよびαが大きく、粒子径のばらつき
が小さいため、サージ電流が素子に均一に流れ、また、
Baによって粒界が効果的に高抵抗化されるため、サージ
耐量が大きくなるという効果が得られる。Effects of the Invention As described above, according to the present invention, since the particle diameter is large due to the liquid phase sintering effect of the fourth component, the varistor voltage is low, the dielectric constants ε and α are large, and the dispersion of the particle diameter is small. Therefore, surge current flows uniformly through the element,
Ba effectively increases the resistance of the grain boundaries, and thus has the effect of increasing the surge resistance.
第１図は本発明による素子を示す正面図、第２図は本発
明による素子を示す断面図である。 １……焼結体、2,3……電極。FIG. 1 is a front view showing an element according to the present invention, and FIG. 2 is a sectional view showing the element according to the present invention. 1 ... Sintered body, 2,3 ... Electrode.
Claims (3)
00〜99.998mol％,Nb2O5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,C
eO2,Sm2O3,Pr6O11,Nd2O3のうち少なくとも１種類以上を
0.001〜5.000mol％,Al2O3,Sb2O3,BaO,BeO,PbO,B2O3,Cr2
O3,Fe2O3,CdO,K2O,CaO,Co2O3,CuO,Cu2O,Li2O,LiF,MgO,M
nO2,MoO3,Na2O,NaF,NiO,Rh2O3,SeO2,Ag2O,SiO2,SiC,Sr
O,Tl2O3,ThO2,TiO2,V2O5,Bi2O3,ZnO,ZrO2,SnO2のうち少
なくとも１種類以上を0.001〜5.000mol％含有してなる
主成分100重量部と、SrTiO360.000〜32.500mol％,SiO24
0.000〜67.5mol％からなる混合物を1200℃以上で焼成し
てなる添加物0.001〜10.000重量部とからなることを特
徴とする電圧依存性非直線抵抗体磁器組成物。(1) Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) is converted to 90.0%
00~99.998mol%, Nb 2 O 5, Ta 2 O 5, WO 3, Dy 2 O 3, Y 2 O 3, La 2 O 3, C
eO 2 , Sm 2 O 3 , Pr 6 O 11 , Nd 2 O 3
0.001 to 5.000 mol%, Al 2 O 3 , Sb 2 O 3 , BaO, BeO, PbO, B 2 O 3 , Cr 2
O 3 , Fe 2 O 3 , CdO, K 2 O, CaO, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, LiF, MgO, M
nO 2 , MoO 3 , Na 2 O, NaF, NiO, Rh 2 O 3 , SeO 2 , Ag 2 O, SiO 2 , SiC, Sr
O, Tl 2 O 3 , ThO 2 , TiO 2 , V 2 O 5 , Bi 2 O 3 , ZnO, ZrO 2 , SnO 2 100% by weight of a main component containing 0.001 to 5.000 mol% of at least one kind or more. Part and SrTiO 3 60.000-32.500mol%, SiO 2 4
A voltage-dependent nonlinear resistor porcelain composition comprising 0.001 to 10.000 parts by weight of an additive obtained by firing a mixture of 0.000 to 67.5 mol% at 1200 ° C. or higher.
00〜99.998mol％,Nb2O5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,C
eO2,Sm2O3,Pr6O11,Nd2O3のうち少なくとも１種類以上を
0.001〜5.000mol％,Al2O3,Sb2O3,BaO,BeO,PbO,B2O3,Cr2
O3,Fe2O3,CdO,K2O,CaO,Co2O3,CuO,Cu2O,Li2O,LiF,MgO,M
nO2,MoO3,Na2O,NaF,NiO,Rh2O3,SeO2,Ag2O,SiO2,SiC,Sr
O,Tl2O3,ThO2,TiO2,V2O5,Bi2O3,ZnO,ZrO2,SnO2のうち少
なくとも１種類以上を0.001〜5.000mol％含有してなる
主成分100重量部と、SrTiO360.000〜32.500mol％,SiO24
0.000〜67.5mol％からなる混合物を1200℃以上で焼成し
てなる添加物0.001〜10.000重量部とからなる組成物
を、1100℃以上で焼成したことを特徴とするバリスタの
製造方法。2. The method according to claim 1, wherein Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) is converted to 90.0%.
00~99.998mol%, Nb 2 O 5, Ta 2 O 5, WO 3, Dy 2 O 3, Y 2 O 3, La 2 O 3, C
eO 2 , Sm 2 O 3 , Pr 6 O 11 , Nd 2 O 3
0.001 to 5.000 mol%, Al 2 O 3 , Sb 2 O 3 , BaO, BeO, PbO, B 2 O 3 , Cr 2
O 3 , Fe 2 O 3 , CdO, K 2 O, CaO, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, LiF, MgO, M
nO 2 , MoO 3 , Na 2 O, NaF, NiO, Rh 2 O 3 , SeO 2 , Ag 2 O, SiO 2 , SiC, Sr
O, Tl 2 O 3 , ThO 2 , TiO 2 , V 2 O 5 , Bi 2 O 3 , ZnO, ZrO 2 , SnO 2 100% by weight of a main component containing 0.001 to 5.000 mol% of at least one kind or more. Part and SrTiO 3 60.000-32.500mol%, SiO 2 4
A method for producing a varistor, characterized in that a composition comprising 0.001 to 10.000 parts by weight of an additive obtained by firing a mixture of 0.000 to 67.5 mol% at 1200 ° C or higher is fired at 1100 ° C or higher.
00〜99.998mol％,Nb2O5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,C
eO2,Sm2O3,Pr6O11,Nd2O3のうち少なくとも１種類以上を
0.001〜5.000mol％,Al2O3,Sb2O3,BaO,BeO,PbO,B2O3,Cr2
O3,Fe2O3,CdO,K2O,CaO,Co2O3,CuO,Cu2O,Li2O,LiF,MgO,M
nO2,MoO3,Na2O,NaF,NiO,Rh2O3,SeO2,Ag2O,SiO2,SiC,Sr
O,Tl2O3,ThO2,TiO2,V2O5,Bi2O3,ZnO,ZrO2,SnO2のうち少
なくとも１種類以上を0.001〜5.000mol％含有してなる
主成分100重量部と、SrTiO360.000〜32.500mol％,SiO24
0.000〜67.5mol％からなる混合物を1200℃以上で焼成し
てなる添加物0.001〜10.000重量部とからなる組成物を1
100℃以上で焼成した後、還元性雰囲気中で1200℃以上
で焼成し、その後酸化性雰囲気中で900〜1300℃で焼成
したことを特徴とするバリスタの製造方法。(3) Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) is converted to 90.0%.
00~99.998mol%, Nb 2 O 5, Ta 2 O 5, WO 3, Dy 2 O 3, Y 2 O 3, La 2 O 3, C
eO 2 , Sm 2 O 3 , Pr 6 O 11 , Nd 2 O 3
0.001 to 5.000 mol%, Al 2 O 3 , Sb 2 O 3 , BaO, BeO, PbO, B 2 O 3 , Cr 2
O 3 , Fe 2 O 3 , CdO, K 2 O, CaO, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, LiF, MgO, M
nO 2 , MoO 3 , Na 2 O, NaF, NiO, Rh 2 O 3 , SeO 2 , Ag 2 O, SiO 2 , SiC, Sr
O, Tl 2 O 3 , ThO 2 , TiO 2 , V 2 O 5 , Bi 2 O 3 , ZnO, ZrO 2 , SnO 2 100% by weight of a main component containing 0.001 to 5.000 mol% of at least one kind or more. Part and SrTiO 3 60.000-32.500mol%, SiO 2 4
A composition consisting of 0.001 to 10.000 parts by weight of an additive obtained by firing a mixture consisting of 0.000 to 67.5 mol% at 1200 ° C. or higher
A method for manufacturing a varistor, comprising: firing at 100 ° C or higher, firing at 1200 ° C or higher in a reducing atmosphere, and then firing at 900 to 1300 ° C in an oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246818A JP2789714B2 (en) | 1989-09-22 | 1989-09-22 | Voltage-dependent nonlinear resistor porcelain composition and method for manufacturing varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246818A JP2789714B2 (en) | 1989-09-22 | 1989-09-22 | Voltage-dependent nonlinear resistor porcelain composition and method for manufacturing varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03109261A JPH03109261A (en) | 1991-05-09 |
| JP2789714B2 true JP2789714B2 (en) | 1998-08-20 |
Family
ID=17154149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1246818A Expired - Fee Related JP2789714B2 (en) | 1989-09-22 | 1989-09-22 | Voltage-dependent nonlinear resistor porcelain composition and method for manufacturing varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2789714B2 (en) |
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| AU7201594A (en) * | 1993-06-09 | 1995-01-03 | United States Of America, As Represented By The Secretary Of The Army, The | Novel ceramic ferroelectic composite material - bsto-zro2 |
| US5312790A (en) * | 1993-06-09 | 1994-05-17 | The United States Of America As Represented By The Secretary Of The Army | Ceramic ferroelectric material |
| EP2063524A1 (en) * | 2007-11-26 | 2009-05-27 | ABB Research Ltd. | De-excitation element for receiving a de-excitation power supply from an inductive electric charge |
| CN106316395B (en) * | 2016-08-08 | 2019-09-13 | 苏州博恩希普新材料科技有限公司 | The microwave-medium ceramics and preparation method of a kind of high dielectric constant, high-quality-factor |
| CN106887273B (en) * | 2017-03-20 | 2019-01-08 | 北京市合众创能光电技术有限公司 | PERC crystal silicon solar energy battery back silver paste and preparation method thereof |
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1989
- 1989-09-22 JP JP1246818A patent/JP2789714B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JPH03109261A (en) | 1991-05-09 |
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