JP2021093428A - Sample holder - Google Patents

Abstract

To provide a sample holder capable of suppressing ununiformity of a temperature distribution of a sample holder surface.SOLUTION: A sample holder 100 comprises: an insulation base 10; a heating resistor 11; an inner wiring 12; a first penetration conductor 13; and a second penetration conductor 14. The sample holder 100 may further comprise a support body 20 and a joint material 30. A first penetration hole 15 contains a penetration hole positioned on a virtual line L connecting the first penetration conductor 13 and the second penetration conductor 14 in a plan view. In the inner wiring 12, a connection wiring 17 connecting the first penetration conductor 13 and the second penetration conductor 14 is included. A connection wiring 17 includes: an annular first wiring part 18 surrounding the first penetration hole 15; and a second wiring part 19 other than the annular first wiring part 18.SELECTED DRAWING: Figure 2A

Description

The present disclosure relates to a sample holder for holding a sample such as a semiconductor wafer, which is used in a manufacturing process of a semiconductor integrated circuit, a manufacturing process of a liquid crystal display device, or the like.

As a sample holder used in a semiconductor manufacturing apparatus or the like, for example, a member for a semiconductor manufacturing apparatus described in Patent Document 1 is known. The member described in Patent Document 1 includes an alumina sintered body plate having a built-in electrode, and the alumina sintered body plate has through holes penetrating in the thickness direction.

International release WO2018 / 23446

The insulating substrate may be provided with a heat generating resistor for heating the held sample. When the internal wiring for energizing the heat generating resistor is arranged in the vicinity of the through hole, it is arranged so as to bypass the through hole. In the internal wiring, in the part near the through hole on one side in the width direction, heat is conducted to the through hole, so that a temperature difference occurs between the part and the part on the other side in the width direction, and the temperature distribution of the internal wiring is improper. Become uniform. The non-uniformity of the temperature distribution of the internal wiring causes the non-uniformity of the temperature distribution on the sample holding surface of the insulating substrate.

The sample holder of the present disclosure is a plate-shaped insulating substrate having a first surface which is a sample holding surface and a second surface opposite to the first surface, and penetrates from the first surface to the second surface. Insulating substrate with through holes to
With the heat generating resistor provided on the second surface of the insulating substrate,
The internal wiring provided inside the insulating substrate and
A first through conductor that electrically connects the internal wiring and the heat generating resistor,
A second through conductor that electrically connects the internal wiring and the external wiring is provided.
In a plan view, the through hole is located on an imaginary line segment connecting the first through conductor and the second through conductor.
The internal wiring includes a connection wiring connecting the first through conductor and the second through conductor.
The connection wiring has an annular first wiring portion surrounding the through hole and a second wiring portion other than the first wiring portion.

According to the sample holder of the present disclosure, it is possible to prevent the temperature distribution of the sample holding surface from becoming non-uniform.

It is sectional drawing of the sample holder of 1st Embodiment. It is a top view which shows the internal wiring of an insulating substrate. It is a top view which shows the heat generation resistor of an insulating substrate. It is a partially enlarged view which shows the internal wiring of 2nd Embodiment. It is a partially enlarged view which shows the internal wiring of 3rd Embodiment. It is a partially enlarged view which shows the internal wiring of 4th Embodiment. It is a partially enlarged view which shows the internal wiring of 5th Embodiment. It is a partially enlarged view which shows the internal wiring of 6th Embodiment.

Hereinafter, the sample holder 100 will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing the sample holder of the first embodiment. FIG. 2A is a plan view showing the internal wiring of the insulating substrate. FIG. 2B is a plan view showing a heat generating resistor of the insulating substrate. The sample holder 100 includes an insulating substrate 10, a heat generating resistor 11, an internal wiring 12, a first through conductor 13, and a second through conductor 14. The sample holder 100 may further include a support 20 and a bonding material 30.

The insulating substrate 10 is a ceramic body having a first surface 10a and a second surface 10b opposite to the first surface 10a, and the first surface 10a is a sample holding surface for holding a sample. The insulating substrate 10 is a plate-shaped member, and the outer shape is not limited, and may be, for example, a disk-shaped or a square plate-shaped member.

The insulating substrate 10 is made of, for example, a ceramic material. The ceramic material may be, for example, alumina, aluminum nitride, silicon nitride, yttria, or the like. The external dimensions of the insulating substrate 10 can be, for example, a diameter (or side length) of 200 to 500 mm and a thickness of 2 to 15 mm.

As shown in FIG. 2B, the sample holder 100 is provided with a heat generating resistor 11 on the second surface 10b of the insulating substrate 10, and an internal wiring 12 is provided inside as shown in FIG. 2A. There is. The heat generating resistor 11 and the internal wiring 12 are electrically connected by the first through conductor 13. Further, the internal wiring 12 is connected to the external wiring 21 for connecting to an external power source or the like by the second through conductor 14 for energization. In the present embodiment, the first through conductor 13 is located outward on the outer peripheral side, and the second through conductor 14 is located on the center side. The second through conductor 14 is gathered on the center side to facilitate connection with the outside. The heat-generating resistor 11 is provided over the entire second surface 10b, and when the heat-generating resistor 11 generates heat, it is heated over the entire first surface 10a, which is the sample holding surface. The heat generating resistor 11 and the internal wiring 12 have, for example, a metal material. As the metal material, for example, a metal material such as platinum, tungsten or molybdenum is used.

The sample holder 100 is used, for example, by generating plasma above the first surface 10a of the insulating substrate 10 which is the sample holding surface. Plasma can be generated by exciting a gas located between the electrodes by applying a high frequency between a plurality of electrodes provided outside, for example.

The support 20 is made of metal and is a member for supporting the insulating substrate 10. As the metal material, for example, aluminum can be used. The outer shape of the support 20 is not particularly limited, and may be circular or square. The external dimensions of the support 20 can be, for example, a diameter (or side length) of 200 to 500 mm and a thickness of 10 to 100 mm. The support 20 may have the same outer shape as the insulating substrate 10, may have a different outer shape, may have the same outer dimensions, or may have different outer dimensions.

The support 20 and the insulating substrate 10 are joined via a joining material 30. Specifically, the first surface 20a of the support 20 and the second surface 10b of the insulating substrate 10 are joined by a joining material 30. As the bonding material 30, for example, an adhesive made of a resin material can be used. As the resin material, for example, a silicone resin or the like can be used.

As shown in FIG. 1, the insulating substrate 10 has a first through hole 15 which is a through hole penetrating from the first surface 10a to the second surface 10b. Further, the support 20 has a second through hole 16 penetrating from the first surface 20a to the second surface 20b on the opposite side of the first surface 20a. The second through hole 16 and the first through hole 15 communicate with each other to form a continuous hole from the first surface 10a of the insulating substrate 10 through the bonding material 30 to the second surface 20b of the support 20. There is. The second through hole 16 and the first through hole 15 allow, for example, a plasma generating gas such as helium to flow from the second surface 20b side of the support 20 to the first surface 10a side of the insulating substrate 10 which is a sample holding surface. It is provided as a gas inflow hole for allowing the gas to flow. A through hole 22 for leading the external wiring 21 connected to the second through conductor 14 of the insulating substrate 10 to the outside is provided in the central portion of the support 20.

As described above, the internal wiring 12 is provided inside the insulating substrate 10, but since the internal wiring 12 has the first through hole 15, the internal wiring 12 also includes the wiring located in the vicinity of the first through hole 15. Is done. Further, as shown in FIG. 2A, the first through hole 15 includes a through hole located on the virtual line segment L connecting the first through conductor 13 and the second through conductor 14 in a plan view. The internal wiring 12 includes a connection wiring 17 that connects the first through conductor 13 and the second through conductor 14. The connection wiring 17 has an annular first wiring portion 18 surrounding the first through hole 15 and a second wiring portion 19 other than the first wiring portion 18. The circular ring includes an annular ring, and further includes a polygonal ring such as a rectangular ring.

In the present embodiment, the opening shape of the first through hole 15 is circular, and the first wiring portion 18 is an annular shape surrounding the first through hole 15. The circular opening of the first through hole 15 and the annulus of the first wiring portion 18 are concentric. Even when heat is conducted from the first wiring portion 18 to the first through hole 15, since the first wiring portion 18 is annular, it uniformly reaches the first through hole 15 from the inner peripheral side of the annular shape. Heat is transferred and non-uniformity of temperature distribution in the connection wiring 17 is suppressed. As a result, non-uniformity of the temperature distribution on the sample holding surface of the insulating substrate 10 is suppressed.

Next, the second embodiment will be described. The second embodiment differs from the first embodiment only in the configuration of the connection wiring. FIG. 3 is a partially enlarged view showing the connection wiring of the second embodiment. In the first embodiment, the first wiring portion 18 of the connection wiring 17 is annular, whereas in the second embodiment, the first wiring portion 18A of the connection wiring 17A is a square ring, more specifically a rhombus. It is a ring. The diagonal line of the rhombus is parallel or perpendicular to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14. The opening shape of the first through hole 15 is circular as in the first embodiment.

Since the first wiring portion 18A has a rhombic ring shape and the opening shape of the first through hole 15 is circular and these have different shapes, the distance between the first wiring portion 18A and the first through hole 15 is constant. Not different. The distance between the first wiring portion 18A and the first through hole 15 is the distance between the inner circumference of the first wiring portion 18A and the opening of the first through hole 15. In the present embodiment, in a plan view, the distance in the direction parallel to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14 is larger than the distance in the direction orthogonal to the virtual line segment L. That is, of the distance between the first wiring portion 18A and the first through hole 15, the distance in the direction parallel to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14 is set to G1, and the virtual line segment is defined as G1. When the interval in the direction orthogonal to L is G2, G1> G2.

The virtual line segment L connecting the first through conductor 13 and the second through conductor 14 indicates the current flow direction. In the first wiring portion 18A, at the corner of the inner circumference located in the direction orthogonal to the virtual line segment L, the current density becomes relatively dense, and the corner of the inner circumference located in the direction parallel to the virtual line segment L. In the part, the current density becomes relatively sparse. The amount of heat generated is relatively large at the corners of the inner circumference located in the direction orthogonal to the virtual line segment L, and the amount of heat generated is relatively large at the corners of the inner circumference located in the direction parallel to the virtual line segment L. Few. By making the interval G1 in the direction parallel to the virtual line segment L relatively large, the heat transfer from the corner portion having a small amount of heat generation to the first through hole 15 is reduced, and the interval in the direction orthogonal to the virtual line segment L is reduced. By making G2 relatively small, heat transfer from the corner portion having a large amount of heat generation to the first through hole 15 can be increased, and non-uniformity of the temperature distribution in the connection wiring 17 can be suppressed. As a result, non-uniformity of the temperature distribution on the sample holding surface of the insulating substrate 10 is suppressed.

Next, the third embodiment will be described. The third embodiment differs from the first embodiment only in the configuration of the connection wiring. FIG. 4 is a partially enlarged view showing the connection wiring of the third embodiment. In the first embodiment, the first wiring portion 18 of the connection wiring 17 has an annular shape, whereas in the third embodiment, the first wiring portion 18B has a square ring shape, more specifically a rhombic ring shape. The diagonal line of the rhombus is parallel or perpendicular to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14. The opening shape of the first through hole 15 is circular as in the first embodiment.

Since the first wiring portion 18B has a rhombic ring shape and the opening shape of the first through hole 15 has a circular shape, and these have different shapes, the distance between the first wiring portion 18B and the first through hole 15 is constant. Not different. In the present embodiment, the first wiring portion 18B is directly electrically connected to the first through conductor 13. For example, it is connected to the first through conductor 13 at the apex of the diamond-shaped annular first wiring portion 18B. Further, the first wiring portion 18B is not directly connected to the second through conductor 14. The apex portion of the first wiring portion 18B facing the apex portion connected to the first through conductor 13 is connected to the second wiring portion 19, and the second wiring portion 19 is opposite to the first wiring portion 18B. It is connected to the second through conductor 14 on the side. In the present embodiment, in a plan view, the distance between the first wiring portion 18B and the first through hole 15 and the distance between the first through hole 15 and the first through conductor 13 is the first through hole 15 and the first through hole 15. It is smaller than the distance located between the two through conductors 14. That is, of the distances between the first wiring portion 18B and the first through hole 15, the distance located between the first through hole 15 and the first through conductor 13 is set to G3, and is located at a position facing the first through hole 15. When the distance between the first through hole 15 and the second through conductor 14 is G4, G3 <G4. The first wiring portion 18B of the present embodiment has a rhombic ring shape and is a so-called kite shape.

In the first wiring portion 18B, at the apex portion connected to the first through conductor 13, the current density becomes relatively dense, and the apex portion on the opposite side is not connected to the through conductor. At the apex portion connected to the second wiring portion 19, the current density becomes relatively sparse. The amount of heat generated is relatively large at the apex portion connected to the first through conductor 13, and the amount of heat generated is relatively small at the apex portion on the opposite side. By making the distance G3 located between the first through hole 15 and the first through conductor 13 relatively small, heat transfer from the apex portion that generates a large amount of heat to the first through hole 15 is increased, and the first through hole 15 is first. By relatively increasing the distance G4 located between the through hole 15 and the second through conductor 14, the heat transfer from the apex portion where the amount of heat generated is small to the first through hole 15 is reduced, and the connection wiring 17 It is possible to suppress the non-uniformity of the temperature distribution in. As a result, non-uniformity of the temperature distribution on the sample holding surface of the insulating substrate 10 is suppressed.

Next, the fourth embodiment will be described. The fourth embodiment differs from the first embodiment only in the configuration of the connection wiring. FIG. 5 is a partially enlarged view showing the connection wiring of the fourth embodiment. In the first embodiment, the first wiring portion 18 of the connection wiring 17 has an annular shape, whereas in the fourth embodiment, the first wiring portion 18A has a square ring shape, more specifically a rhombic ring shape. The diagonal line of the rhombus is parallel or perpendicular to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14. The opening shape of the first through hole 15 is circular as in the first embodiment. Although the first wiring portion of the present embodiment has the same shape as the first wiring portion 18A of the second embodiment, it may have the same shape as the first wiring portion 18B of the third embodiment.

In the present embodiment, the line width of the second wiring portion 19A is larger than the opening width of the first wiring portion 18B in the direction orthogonal to the virtual line segment L. Since the first wiring portion 18A has a rhombic ring shape, the opening shape is a rhombus shape. The opening width in the direction orthogonal to the virtual line segment L is the same as the diagonal length orthogonal to the virtual line segment L of the diamond-shaped opening. When the line width of the second wiring portion 19A is W1 and the opening width of the first wiring portion 18A in the direction orthogonal to the virtual line segment L is W2, W1> W2.

When the line width W1 of the second wiring portion 19 is smaller than the opening width W2 of the first wiring portion 18A, the current flowing through the second wiring portion 19 opens the opening of the first wiring portion 18A in the first wiring portion 18A. In order to make a detour, there are many bending points in the current path. The inflection point of the current path causes the current density to become sparse and dense. If there are many bending points in the current path in the connection wiring 17, the current density becomes more sparse and dense, and the temperature distribution becomes non-uniform. By making the line width W1 of the second wiring portion 19A larger than the opening width W2 of the first wiring portion 18A, the current flowing through the second wiring portion 19A becomes the first wiring portion 18A in the first wiring portion 18A. The bending point of the current path can be reduced without bypassing the opening. By reducing the bending points of the current path, it is possible to suppress non-uniformity of the temperature distribution in the connection wiring 17. As a result, non-uniformity of the temperature distribution on the sample holding surface of the insulating substrate 10 is suppressed.

Next, the fifth embodiment will be described. The fifth embodiment differs from the first embodiment only in the configuration of the connection wiring. FIG. 6 is a partially enlarged view showing the connection wiring of the fifth embodiment. In the first embodiment, the first wiring portion 18 of the connection wiring 17 is annular, whereas in the fifth embodiment, the first wiring portion 18C is a square ring, which is one of the polygonal rings, more specifically. It is a rhombic ring. The diagonal line of the rhombus is parallel or perpendicular to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14. The opening shape of the first through hole 15 is circular as in the first embodiment.

When the first wiring portion 18 is a polygonal ring shape, a plurality of corner portions are present on the inner circumference. The corner portion of the inner circumference is a portion where the current density is relatively dense, and the corner portion other than the corner portion is a portion where the current density is relatively sparse, and the current density is sparse. In the present embodiment, in the first wiring portion 18C which is a rhombic ring, at least one corner portion C of the inner circumference is R-shaped, in other words, curved. By forming the R shape, it is possible to suppress non-uniformity of the temperature distribution in the connection wiring 17 by reducing the portion where the current density is relatively dense. As a result, non-uniformity of the temperature distribution on the sample holding surface of the insulating substrate 10 is suppressed.

As described in the second embodiment, in the first wiring portion 18C which is a rhombic ring, the inner circumference located in the direction orthogonal to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14. At the corners, the current density becomes relatively dense. In the present embodiment, the corner portion C of the inner circumference located in the direction orthogonal to the virtual line segment L is R-shaped, and the non-uniformity of the temperature distribution in the connection wiring 17 can be further suppressed.

Next, the sixth embodiment will be described. The sixth embodiment differs from the first embodiment only in the configuration of the connection wiring. FIG. 7 is a partially enlarged view showing the connection wiring of the sixth embodiment. In the first embodiment, the first wiring portion 18 of the connection wiring 17 is annular, whereas in the sixth embodiment, the first wiring portion 18D is a square ring, which is one of the polygonal rings, more specifically. It is a rhombic ring. The diagonal line of the rhombus is parallel or perpendicular to the virtual line segment L connecting the first through conductor 13 and the second through conductor 14. The opening shape of the first through hole 15 is circular as in the first embodiment.

When the first wiring portion 18 is a polygonal ring shape, a plurality of corner portions are present on the inner circumference. When the side connecting the two adjacent corners on the inner circumference is curved outward, the opening is larger than when the side is straight, and the current flowing through the second wiring portion 19 is the first. In the wiring portion 18, in order to bypass the opening of the first wiring portion 18, the number of bending points of the current path increases. If there are many bending points in the current path in the connection wiring 17, the current density becomes more sparse and dense, and the temperature distribution becomes non-uniform. In the present embodiment, in the first wiring portion 18D which is a rhombic ring, the side S connecting the two adjacent corners on the inner circumference is curved inward. In this case, the opening is smaller than in the case where the side S is linear, and the current flowing through the second wiring portion 19 does not bypass the opening of the first wiring portion 18D in the first wiring portion 18D. The bending point of the path can be reduced. Similar to the fourth embodiment, by reducing the bending points of the current path, it is possible to suppress the non-uniformity of the temperature distribution in the connection wiring 17. As a result, non-uniformity of the temperature distribution on the sample holding surface of the insulating substrate 10 is suppressed.

Of the connection wirings 17 included in the internal wiring 12, the first wiring portion 18 may be annular in one connection wiring 17 as described above, and the first wiring portion 18 is annular in the plurality of connection wirings 17. The first wiring portion 18 may be annular in all the connection wirings 17. Further, the connection wiring 17 included in the internal wiring 12 may be the connection wiring 17 of any one of the first to sixth embodiments described above, and includes the connection wiring 17 of a plurality of types of embodiments in combination. You may.

The heat generating resistor 11 provided on the second surface 10b of the insulating substrate 10 may be provided inside the insulating substrate 10 in the same manner as the internal wiring 12, for example. Further, the support 20 is not directly bonded to the second surface 10b of the insulating substrate 10, but an insulating material such as a ceramic material or a dielectric material is interposed between the insulating substrate 10 and the support 20. May be joined. The second through hole 16 provided in the support 20 may be provided with a tubular member (sleeve) made of an insulating material such as a ceramic material in order to suppress discharge from plasma on the inner peripheral surface. .. In the communicating portion between the first through hole 15 and the second through hole 16, a filter member made of a porous ceramic material or the like may be provided in order to suppress the backflow of plasma.

10 Insulated substrate 10a 1st surface 10b 2nd surface 11 Heat generating resistor 12 Internal wiring 13 1st through conductor 14 2nd through conductor 15 1st through hole 16 2nd through hole 17, 17A Connection wiring 18, 18A, 18B, 18C , 18D 1st wiring part 19, 19A 2nd wiring part 20 Support 20a 1st surface 20b 2nd surface 30 Joint material 100 Sample holder C Corner L Virtual line segment S side

Claims (6)

A plate-shaped insulating substrate having a first surface which is a sample holding surface and a second surface opposite to the first surface, and an insulating substrate having a through hole penetrating from the first surface to the second surface. ,
With the heat generating resistor provided on the second surface of the insulating substrate,
The internal wiring provided inside the insulating substrate and
A first through conductor that electrically connects the internal wiring and the heat generating resistor,
A second through conductor that electrically connects the internal wiring and the external wiring is provided.
In a plan view, the through hole is located on an imaginary line segment connecting the first through conductor and the second through conductor.
The internal wiring includes a connection wiring connecting the first through conductor and the second through conductor.
The connection wiring is a sample holder having an annular first wiring portion surrounding the through hole and a second wiring portion other than the first wiring portion. The sample holder according to claim 1, wherein in a plan view, the distance between the first wiring portion and the through hole in the direction parallel to the virtual line segment is larger than the distance in the direction orthogonal to the virtual line segment. The first wiring portion is electrically connected to the first through conductor.
In a plan view, the distance between the first wiring portion and the through hole, which is located between the through hole and the first through conductor, is the distance between the through hole and the second through conductor. The sample holder according to claim 1 or 2, which is smaller than the sample holder. The sample holder according to any one of claims 1 to 3, wherein the line width of the second wiring portion is larger than the opening width of the first wiring portion in the direction orthogonal to the virtual line segment. The sample holder according to any one of claims 1 to 4, wherein the first wiring portion is a polygonal ring shape, and at least one corner portion of the inner circumference is R-shaped. The sample holder according to any one of claims 1 to 5, wherein the first wiring portion is a polygonal ring shape, and the side connecting two adjacent corners on the inner circumference is curved inward. ..

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