JP2018182078A - 分割方法 - Google Patents
分割方法 Download PDFInfo
- Publication number
- JP2018182078A JP2018182078A JP2017079994A JP2017079994A JP2018182078A JP 2018182078 A JP2018182078 A JP 2018182078A JP 2017079994 A JP2017079994 A JP 2017079994A JP 2017079994 A JP2017079994 A JP 2017079994A JP 2018182078 A JP2018182078 A JP 2018182078A
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- dividing
- division
- heating
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 44
- 238000001816 cooling Methods 0.000 claims abstract description 26
- 239000011148 porous material Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 abstract description 20
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 32
- 230000001681 protective effect Effects 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
Abstract
【解決手段】板状の被加工物を分割するための分割方法であって、被加工物に設定された分割予定ラインに沿って分割の起点となる起点領域を形成する起点領域形成ステップと、起点領域形成ステップを実施した後に、被加工物を加熱する加熱ステップと、加熱ステップを実施した後に、被加工物を冷却する冷却ステップと、冷却ステップを実施した後に、被加工物に力を付与して起点領域に沿って被加工物を分割する分割ステップと、分割ステップを実施する前に、被加工物にエキスパンドシートを貼着するシート貼着ステップと、を含み、分割ステップでは、エキスパンドシートを拡張することで被加工物に力を付与する。
【選択図】図2
Description
本実施形態では、透過性のあるレーザビームを被加工物の内部に集光させて、多光子吸収により改質された改質層(起点領域)を形成した後に、この改質層を起点に被加工物を分割する分割方法について説明する。図1(A)は、本実施形態に係る分割方法で分割される被加工物11の構成例を模式的に示す斜視図である。
本実施形態では、透過性のあるレーザビームを被加工物の内部に集光させて、被加工物の内部から表面又は裏面に達する複数の細孔(起点領域)を形成した後に、この細孔を起点に被加工物を分割する分割方法について説明する。図5は、本実施形態の分割方法で分割される被加工物51の構成例を模式的に示す平面図である。
11a 表面
11b 裏面
13 分割予定ライン(ストリート)
15 デバイス
17 改質層(起点領域)
19 クラック(起点領域)
21 保護部材
21a 表面
21b 裏面
41 エキスパンドシート
41a 表面
43 フレーム
51 被加工物
51a 表面
51b 裏面
53 分割予定ライン
53a 分割予定ライン
53b 分割予定ライン
55 細孔(起点領域)
61 エキスパンドシート
61a 表面
63 フレーム
71 エキスパンドシート
71a 表面
2 レーザ照射装置
4 チャックテーブル
4a 保持面
6 レーザ照射ユニット
12 ホットプレート
12a 加熱面
22 拡張装置
24 支持構造
26 拡張ドラム
28 支持テーブル
30 クランプ
32 昇降機構
34 シリンダケース
36 ピストンロッド
42 拡張装置
44 第1挟持ユニット
46 第2挟持ユニット
48 第3挟持ユニット
50 第4挟持ユニット
Claims (2)
- 板状の被加工物を分割するための分割方法であって、
被加工物に設定された分割予定ラインに沿って分割の起点となる起点領域を形成する起点領域形成ステップと、
該起点領域形成ステップを実施した後に、被加工物を加熱する加熱ステップと、
該加熱ステップを実施した後に、被加工物を冷却する冷却ステップと、
該冷却ステップを実施した後に、被加工物に力を付与して該起点領域に沿って被加工物を分割する分割ステップと、
該分割ステップを実施する前に、被加工物にエキスパンドシートを貼着するシート貼着ステップと、を備え、
該分割ステップでは、該エキスパンドシートを拡張することで被加工物に力を付与することを特徴とする分割方法。 - 該起点領域形成ステップでは、被加工物にレーザビームを照射して、被加工物の内部から一方の面に達する複数の細孔を該分割予定ラインに沿って形成することを特徴とする請求項1に記載の分割方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017079994A JP7217585B2 (ja) | 2017-04-13 | 2017-04-13 | 分割方法 |
TW107108547A TWI745561B (zh) | 2017-04-13 | 2018-03-14 | 分割方法 |
SG10201802805RA SG10201802805RA (en) | 2017-04-13 | 2018-04-04 | Workpiece dividing method |
US15/946,293 US10580697B2 (en) | 2017-04-13 | 2018-04-05 | Workpiece dividing method |
CN201810304990.6A CN108735588B (zh) | 2017-04-13 | 2018-04-08 | 分割方法 |
KR1020180041627A KR20180115622A (ko) | 2017-04-13 | 2018-04-10 | 분할 방법 |
DE102018205548.3A DE102018205548B4 (de) | 2017-04-13 | 2018-04-12 | Teilungsverfahren für ein werkstück |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017079994A JP7217585B2 (ja) | 2017-04-13 | 2017-04-13 | 分割方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018182078A true JP2018182078A (ja) | 2018-11-15 |
JP7217585B2 JP7217585B2 (ja) | 2023-02-03 |
Family
ID=63679330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017079994A Active JP7217585B2 (ja) | 2017-04-13 | 2017-04-13 | 分割方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10580697B2 (ja) |
JP (1) | JP7217585B2 (ja) |
KR (1) | KR20180115622A (ja) |
CN (1) | CN108735588B (ja) |
DE (1) | DE102018205548B4 (ja) |
SG (1) | SG10201802805RA (ja) |
TW (1) | TWI745561B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020102537A (ja) * | 2018-12-21 | 2020-07-02 | 浜松ホトニクス株式会社 | 半導体対象物加熱装置 |
WO2020166583A1 (ja) * | 2019-02-12 | 2020-08-20 | 株式会社カネカ | 大判半導体基板および割断半導体基板の製造方法 |
JP2021039051A (ja) * | 2019-09-05 | 2021-03-11 | 矢崎総業株式会社 | シャント抵抗式電流検出装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI821679B (zh) * | 2020-08-25 | 2023-11-11 | 南韓商杰宜斯科技有限公司 | 基板處理裝置及基板處理方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0938960A (ja) * | 1995-07-28 | 1997-02-10 | Nec Kansai Ltd | ウェーハ割断方法 |
JP2001284292A (ja) * | 2000-03-31 | 2001-10-12 | Toyoda Gosei Co Ltd | 半導体ウエハーのチップ分割方法 |
JP2003088976A (ja) * | 2001-09-12 | 2003-03-25 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2003181826A (ja) * | 2001-12-19 | 2003-07-02 | Sharp Corp | 分断装置および分断方法 |
JP2006049591A (ja) * | 2004-08-05 | 2006-02-16 | Disco Abrasive Syst Ltd | ウエーハに貼着された接着フィルムの破断方法および破断装置 |
JP2009277982A (ja) * | 2008-05-16 | 2009-11-26 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
JP2011240644A (ja) * | 2010-05-20 | 2011-12-01 | Mitsuboshi Diamond Industrial Co Ltd | レーザ加工方法 |
JP2013136077A (ja) * | 2011-12-28 | 2013-07-11 | Mitsuboshi Diamond Industrial Co Ltd | 分断装置 |
JP2014090011A (ja) * | 2012-10-29 | 2014-05-15 | Mitsuboshi Diamond Industrial Co Ltd | Ledパターン付き基板の加工方法 |
JP2015109368A (ja) * | 2013-12-05 | 2015-06-11 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
JP2015126088A (ja) * | 2013-12-26 | 2015-07-06 | 株式会社ディスコ | ウェーハの分割方法 |
JP2016213318A (ja) * | 2015-05-08 | 2016-12-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017041472A (ja) * | 2015-08-17 | 2017-02-23 | 株式会社ディスコ | 貼り合せ基板の加工方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7005317B2 (en) * | 2003-10-27 | 2006-02-28 | Intel Corporation | Controlled fracture substrate singulation |
JP4630692B2 (ja) * | 2005-03-07 | 2011-02-09 | 株式会社ディスコ | レーザー加工方法 |
WO2011149009A1 (ja) * | 2010-05-28 | 2011-12-01 | オリンパス株式会社 | 細胞分取装置、細胞分取システムおよび細胞分取方法 |
JP2013216513A (ja) * | 2012-04-05 | 2013-10-24 | Nippon Electric Glass Co Ltd | ガラスフィルムの切断方法及びガラスフィルム積層体 |
US8871613B2 (en) | 2012-06-18 | 2014-10-28 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
JP2016040810A (ja) | 2014-08-13 | 2016-03-24 | 株式会社ディスコ | ブレーキング装置 |
JP2016092207A (ja) * | 2014-11-05 | 2016-05-23 | 株式会社ディスコ | フレームユニットの製造方法 |
JP6494360B2 (ja) * | 2015-03-25 | 2019-04-03 | 株式会社ディスコ | 拡張装置 |
CN107835794A (zh) | 2015-07-10 | 2018-03-23 | 康宁股份有限公司 | 在挠性基材板中连续制造孔的方法和与此相关的产品 |
JP6755705B2 (ja) * | 2016-05-09 | 2020-09-16 | 株式会社ディスコ | レーザー加工装置 |
-
2017
- 2017-04-13 JP JP2017079994A patent/JP7217585B2/ja active Active
-
2018
- 2018-03-14 TW TW107108547A patent/TWI745561B/zh active
- 2018-04-04 SG SG10201802805RA patent/SG10201802805RA/en unknown
- 2018-04-05 US US15/946,293 patent/US10580697B2/en active Active
- 2018-04-08 CN CN201810304990.6A patent/CN108735588B/zh active Active
- 2018-04-10 KR KR1020180041627A patent/KR20180115622A/ko not_active Application Discontinuation
- 2018-04-12 DE DE102018205548.3A patent/DE102018205548B4/de active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0938960A (ja) * | 1995-07-28 | 1997-02-10 | Nec Kansai Ltd | ウェーハ割断方法 |
JP2001284292A (ja) * | 2000-03-31 | 2001-10-12 | Toyoda Gosei Co Ltd | 半導体ウエハーのチップ分割方法 |
JP2003088976A (ja) * | 2001-09-12 | 2003-03-25 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2003181826A (ja) * | 2001-12-19 | 2003-07-02 | Sharp Corp | 分断装置および分断方法 |
JP2006049591A (ja) * | 2004-08-05 | 2006-02-16 | Disco Abrasive Syst Ltd | ウエーハに貼着された接着フィルムの破断方法および破断装置 |
JP2009277982A (ja) * | 2008-05-16 | 2009-11-26 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
JP2011240644A (ja) * | 2010-05-20 | 2011-12-01 | Mitsuboshi Diamond Industrial Co Ltd | レーザ加工方法 |
JP2013136077A (ja) * | 2011-12-28 | 2013-07-11 | Mitsuboshi Diamond Industrial Co Ltd | 分断装置 |
JP2014090011A (ja) * | 2012-10-29 | 2014-05-15 | Mitsuboshi Diamond Industrial Co Ltd | Ledパターン付き基板の加工方法 |
JP2015109368A (ja) * | 2013-12-05 | 2015-06-11 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
JP2015126088A (ja) * | 2013-12-26 | 2015-07-06 | 株式会社ディスコ | ウェーハの分割方法 |
JP2016213318A (ja) * | 2015-05-08 | 2016-12-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017041472A (ja) * | 2015-08-17 | 2017-02-23 | 株式会社ディスコ | 貼り合せ基板の加工方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020102537A (ja) * | 2018-12-21 | 2020-07-02 | 浜松ホトニクス株式会社 | 半導体対象物加熱装置 |
JP7260295B2 (ja) | 2018-12-21 | 2023-04-18 | 浜松ホトニクス株式会社 | 半導体対象物加熱装置 |
WO2020166583A1 (ja) * | 2019-02-12 | 2020-08-20 | 株式会社カネカ | 大判半導体基板および割断半導体基板の製造方法 |
JPWO2020166583A1 (ja) * | 2019-02-12 | 2021-10-28 | 株式会社カネカ | 大判半導体基板および割断半導体基板の製造方法 |
JP7178431B2 (ja) | 2019-02-12 | 2022-11-25 | 株式会社カネカ | 大判半導体基板および割断半導体基板の製造方法 |
JP2021039051A (ja) * | 2019-09-05 | 2021-03-11 | 矢崎総業株式会社 | シャント抵抗式電流検出装置 |
JP7116026B2 (ja) | 2019-09-05 | 2022-08-09 | 矢崎総業株式会社 | シャント抵抗式電流検出装置 |
Also Published As
Publication number | Publication date |
---|---|
CN108735588B (zh) | 2024-02-20 |
SG10201802805RA (en) | 2018-11-29 |
TWI745561B (zh) | 2021-11-11 |
KR20180115622A (ko) | 2018-10-23 |
US20180301378A1 (en) | 2018-10-18 |
TW201842559A (zh) | 2018-12-01 |
US10580697B2 (en) | 2020-03-03 |
DE102018205548A1 (de) | 2018-10-18 |
JP7217585B2 (ja) | 2023-02-03 |
DE102018205548B4 (de) | 2024-06-20 |
CN108735588A (zh) | 2018-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI785231B (zh) | 晶圓加工方法 | |
TWI802682B (zh) | 晶圓加工方法 | |
JP6506520B2 (ja) | SiCのスライス方法 | |
JP6053381B2 (ja) | ウェーハの分割方法 | |
US20070128834A1 (en) | Wafer dividing method | |
KR102294251B1 (ko) | 웨이퍼의 가공 방법 | |
JP7217585B2 (ja) | 分割方法 | |
JP6013859B2 (ja) | ウェーハの加工方法 | |
JP2012089709A (ja) | ワークの分割方法 | |
JP2015097221A (ja) | 加工方法 | |
JP2011035245A (ja) | 板状ワークの分割方法 | |
JP6045361B2 (ja) | ウエーハの加工方法 | |
JP2014007217A (ja) | ウェーハの加工方法 | |
JP2013239557A (ja) | チップ間隔維持装置 | |
JP2019033212A (ja) | 分割方法 | |
JP6808295B2 (ja) | 分割方法 | |
TWI830954B (zh) | 晶圓的加工方法 | |
TWI844702B (zh) | 晶圓的加工方法 | |
JP7383338B2 (ja) | ウェーハの加工方法 | |
JP2013239563A (ja) | ウェーハの分割方法 | |
JP2020164358A (ja) | 貼り合わせ基板の部分抜き加工方法及び部分抜き加工装置 | |
JP2015223771A (ja) | ガラス基板の製造方法 | |
JP7305270B2 (ja) | ウェーハの加工方法 | |
JP6440558B2 (ja) | 被加工物の加工方法 | |
JP7350431B2 (ja) | ウェーハの加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170418 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210105 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210303 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210803 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210928 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220419 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20220419 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20220428 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20220506 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20220701 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20220705 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220927 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20221122 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20221220 |
|
C03 | Trial/appeal decision taken |
Free format text: JAPANESE INTERMEDIATE CODE: C03 Effective date: 20230124 |
|
C30A | Notification sent |
Free format text: JAPANESE INTERMEDIATE CODE: C3012 Effective date: 20230124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230124 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7217585 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |