JP2015103573A - Thermosetting die bond film, die bond film with dicing sheet and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermosetting die bond film having a high thermal conductivity, and arranged to be able to sufficiently follow the unevenness of an object to adhere to when being caused to adhere to the object to adhere to.SOLUTION: A thermosetting die bond film has a post-heat curing thermal conductivity of 1 W/m K or more, and comprises thermally conductive particles having a thermal conductivity of 12 W/m K or more and accounting for 75 wt.% or more to the total weight of the thermosetting die bond film, of which the melt viscosity measured at 130°C with a shear rate of 50(1/second) is 200 Pa s or less.

Description

  The present invention relates to a thermosetting die bond film, a die bond film with a dicing sheet, and a method for manufacturing a semiconductor device.

  In recent years, as the speed of data processing of a semiconductor device increases, the amount of heat generated from a semiconductor chip increases, and the importance of designing a semiconductor device with heat dissipation has increased. Heat affects various adverse effects not only on the semiconductor device itself but also on the electronic device body in which it is incorporated. Various methods can be considered as a package countermeasure for heat dissipation, but the most important is heat dissipation via a substrate such as a printed circuit board or a lead frame.

  Therefore, conventionally, an adhesive having high thermal conductivity may be used for bonding the substrate and the semiconductor chip. Conventionally, a silver paste having a relatively high thermal conductivity is used as the adhesive.

  However, in recent years, with the spread of smartphones and tablet PCs and higher performance, it has become difficult to assemble semiconductor devices with silver paste as the semiconductor devices become lighter and thinner.

  Specifically, a package using a thin semiconductor chip with a small chip area is used for a smartphone or a tablet PC. However, if such a semiconductor chip is to be bonded with a paste-like adhesive, the semiconductor chip is cracked because the semiconductor chip is thin, the adhesive wraps around the circuit surface of the semiconductor chip, or the semiconductor chip is inclined. Various manufacturing problems occur, such as In addition, a paste-like adhesive tends to generate voids in the process of bonding and curing. For this reason, voids generated between the semiconductor chip and the substrate hinder heat dissipation, and cause defects such as inability to exhibit the designed thermal conductivity (heat dissipation).

  On the other hand, conventionally, a sheet-like die bond film is known (see, for example, Patent Document 1). If such a die-bonding film is used, chip cracking, adhesive wraparound, and chip tilt can be suppressed. However, the conventional die bond film has room for improvement in that the thermal conductivity is lower than that of the silver paste.

JP 2008-218571 A

  In order to make the die-bonding film highly conductive, for example, it is necessary to mix highly heat-conductive particles with high filling. However, there may be a demerit in various characteristics by making the heat conductive particles highly filled. That is, the semiconductor chip is often used by being bonded to a printed wiring board or the like having a certain degree of surface irregularity, but in a state where the thermally conductive particles are highly filled in the die bond film, the thermally conductive particles and the resin are As the viscosity of the die bond film is increased by the interaction, the fluidity is lowered, and there is a problem that the unevenness of the substrate such as a printed wiring board cannot be sufficiently followed.

  A die bond film containing a resin usually decreases in viscosity when a shear stress is applied. In particular, when shear stress is applied at a high speed (for example, a shear rate of about 20 to 100 (1 / second)), the viscosity is greatly reduced. Thus, there is a method in which when applying the die bond film to the substrate, a high-speed shear stress is generated by applying pressure to reduce the viscosity and follow the unevenness of the substrate. However, in a state where the thermally conductive particles are highly filled in the die bond film, even if pressure is applied to cause shear stress, the viscosity does not sufficiently decrease, and the die bond film may not sufficiently follow the unevenness of the substrate. There is a problem.

  And when a die-bonding film cannot follow the unevenness | corrugation of a board | substrate, a void arises between a die-bonding film and a board | substrate. If there is a void between the die-bonding film and the substrate, there will be a problem that the heat dissipation is reduced as described above, and there is a possibility that the reliability is lowered and peeling from the adherend occurs in the reflow process. There is a problem.

  The present invention has been made in view of the above problems, and its purpose is a thermosetting type that has high thermal conductivity and can sufficiently follow the unevenness of the adherend when being attached to the adherend. A die bond film, a die bond film with a dicing sheet using the thermosetting die bond film, and a method for manufacturing a semiconductor device using the die bond film with the dicing sheet are provided.

  The inventors of the present application have studied a thermosetting die-bonding film in order to solve the conventional problems. As a result, by adopting the following configuration, it is found that the thermal conductivity can be increased and the unevenness of the adherend can be sufficiently followed when being attached to the adherend, thereby completing the present invention. It came to.

That is, the thermosetting die bond film according to the present invention is
The thermal conductivity after thermosetting is 1 W / m · K or more,
Containing 75% by weight or more of thermally conductive particles having a thermal conductivity of 12 W / m · K or more with respect to the entire thermosetting die-bonding film;
The melt viscosity measured at a shear rate of 50 (1 / second) at 130 ° C. is 200 Pa · s or less.

According to the said structure, the heat conductivity of 12 W / m * K or more is contained 75weight% or more with respect to the whole thermosetting die-bonding film, and the heat conductivity after thermosetting is 1W. Since it is / m · K or more, the semiconductor device manufactured using the thermosetting die-bonding film is excellent in heat dissipation.
Further, since the melt viscosity measured at a shear rate of 50 (1 / second) at 130 ° C., that is, the melt viscosity at high-speed shear at 130 ° C. is 200 Pa · s or less, the thermosetting die bond film is attached to the adherend. The viscosity of the thermosetting die-bonding film decreases due to the pressure applied to the film. Accordingly, it is possible to sufficiently follow the unevenness of the adherend such as a printed wiring board and to suppress the generation of voids.

  The said structure WHEREIN: It is preferable that the average particle diameter of the said heat conductive particle is 1 micrometer or more and 10 micrometers or less.

  By setting the average particle size of the heat conductive particles to 1 μm or more, it is possible to ensure wettability to the adherend of the thermosetting die-bonding film and to exhibit good adhesiveness. Moreover, the thermal conductivity improvement effect by addition of a heat conductive particle can be made more favorable by the average particle diameter of the said heat conductive particle being 10 micrometers or less. Further, by setting the average particle size of the thermally conductive particles to 10 μm or less, the thickness of the thermosetting die-bonding film can be reduced, and as a result, the semiconductor chip can be highly laminated, and the thermosetting type Generation | occurrence | production of the chip crack by heat conductive particle protruding from a die-bonding film can be prevented.

In the above-mentioned configuration, it contains a thermoplastic resin and a thermosetting resin,
When the content part by weight of the thermosetting resin is A and the content part by weight of the pre-thermoplastic resin is B, it is preferable that A / B is 5 or more.

  When the thermoplastic resin and the thermosetting resin are contained, the content part by weight of the thermosetting resin is A, and the content part by weight of the pre-thermoplastic resin is B, A / B is 5 or more. At 130 ° C., the melt viscosity measured at a shear rate of 50 (1 / second) is likely to be lowered.

  The said structure WHEREIN: It is preferable that the said thermosetting resin contains a softening point of 100 degrees C or less.

  When the thermosetting resin contains a softening point of 100 ° C. or less, a melt viscosity at 130 ° C. under application of a thermosetting die-bonding film low-speed shear stress (for example, shear rate 5 (1 / second)), That is, it is easy to reduce the melt viscosity at 130 ° C. of the thermosetting die-bonding film without applying pressure. As a result, even when the amount of decrease in viscosity when applying high-speed shear stress is small, it is possible to sufficiently follow the unevenness of the adherend and suppress the generation of voids.

  The said structure WHEREIN: It is preferable that the said thermosetting resin contains a liquid thing at room temperature.

  If the thermosetting resin contains a liquid at room temperature, it can sufficiently follow the unevenness of the adherend, and the generation of voids can be suppressed. The liquid state at room temperature means one having a viscosity at 23 ° C. of 1 to 500,000 mPa · s measured at a shear rate of 5 (1 / second).

Moreover, the manufacturing method of the semiconductor device according to the present invention includes a step of preparing the thermosetting die-bonding film described above,
A die-bonding step of die-bonding the semiconductor chip on an adherend through the thermosetting die-bonding film.

According to the said structure, the said thermosetting type die-bonding film contains 75weight% or more of heat conductive particles with a heat conductivity of 12 W / m * K or more with respect to the whole thermosetting type die-bonding film, Since the thermal conductivity after curing is 1 W / m · K or more, the semiconductor device manufactured using the thermosetting die-bonding film is excellent in heat dissipation.
Further, since the melt viscosity measured at a shear rate of 50 (1 / second) at 130 ° C., that is, the melt viscosity at high-speed shear at 130 ° C. is 200 Pa · s or less, the thermosetting die bond film is attached to the adherend. The viscosity of the thermosetting die-bonding film decreases due to the pressure applied to the film. Accordingly, it is possible to sufficiently follow the unevenness of the adherend such as a printed wiring board and to suppress the generation of voids.

  Moreover, the die-bonding film with a dicing sheet according to the present invention is formed by laminating the thermosetting die-bonding film described above on a dicing sheet in which an adhesive layer is laminated on a substrate. It is characterized by.

Moreover, the method of manufacturing a semiconductor device according to the present invention includes a step of preparing the die bond film with a dicing sheet as described above,
A bonding step of bonding the thermosetting die-bonding film of the die-bonding film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the thermosetting die bond film to form a chip-shaped semiconductor chip;
A pick-up step of picking up the semiconductor chip together with the thermosetting die-bonding film from the die-bonding film with the dicing sheet;
A die-bonding step of die-bonding the semiconductor chip on an adherend through the thermosetting die-bonding film.

According to the said structure, the heat conductivity of 12 W / m * K or more is contained 75weight% or more with respect to the whole thermosetting die-bonding film, and the heat conductivity after thermosetting is 1W. Since it is / m · K or more, the semiconductor device manufactured using the thermosetting die-bonding film is excellent in heat dissipation.
Moreover, since the melt viscosity at the time of high-speed shearing at 130 ° C. of the thermosetting die-bonding film, that is, the melt viscosity measured at a shear rate of 50 (1 / second) at 130 ° C. is 200 Pa · s or less, thermosetting The viscosity of the thermosetting die-bonding film is lowered by the pressure when the die-bonding film is attached to the adherend. Accordingly, it is possible to sufficiently follow the unevenness of the adherend such as a printed wiring board and to suppress the generation of voids.

It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing sheet which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing sheet which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment.

(Die bond film with dicing sheet)
A thermosetting die bond film (hereinafter also referred to as “die bond film”) and a die bond film with a dicing sheet according to an embodiment of the present invention will be described below. The die bond film which concerns on this embodiment can mention the thing of the state in which the dicing sheet is not bonded together in the die bond film with a dicing sheet demonstrated below. Therefore, hereinafter, a die bond film with a dicing sheet will be described, and the die bond film will be described therein. FIG. 1 is a schematic cross-sectional view showing a die bond film with a dicing sheet according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing another die-bonding film with a dicing sheet according to another embodiment of the present invention.

  As shown in FIG. 1, a die bond film 10 with a dicing sheet has a configuration in which a thermosetting die bond film 3 is laminated on a dicing sheet 11. The dicing sheet 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the base material 1, and the die bond film 3 is provided on the pressure-sensitive adhesive layer 2. Moreover, the structure which formed the die-bonding film 3 'only in the workpiece | work affixing part may be sufficient as this invention like the die-bonding film 12 with a dicing sheet shown in FIG.

  The base material 1 has ultraviolet transparency and serves as a strength matrix for the die bond films 10 and 12 with a dicing sheet. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.

  Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, so that the semiconductor chip Can be easily recovered.

  The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. The base material 1 can be used by appropriately selecting the same kind or different kinds, and a blend of several kinds can be used as necessary.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 2, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably about 200,000 to 3,000,000, and particularly preferably about 300,000 to 1,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. In general, about 5 parts by weight or less, further 0.1 to 5 parts by weight is preferably blended with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifiers and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 2 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and a portion 2a corresponding to the work pasting portion of the pressure-sensitive adhesive layer 2 shown in FIG. The difference in adhesive strength with the other part 2b can be provided by irradiating only with radiation.

  Further, by curing the radiation curable pressure-sensitive adhesive layer 2 in accordance with the die bond film 3 ′ shown in FIG. 2, the portion 2 a having a significantly reduced adhesive force can be easily formed. Since the die bond film 3 ′ is attached to the portion 2 a that has been cured and has reduced adhesive strength, the interface between the portion 2 a and the die bond film 3 ′ of the pressure-sensitive adhesive layer 2 has a property of being easily peeled off during pick-up. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 2b. In addition, you may perform irradiation of the radiation to an adhesive layer after dicing and before pick-up.

  As described above, in the pressure-sensitive adhesive layer 2 of the die-bonding film with a dicing sheet 10 shown in FIG. 1, the portion 2 b formed of the uncured radiation-curable pressure-sensitive adhesive adheres to the die-bonding film 3 and is retained when dicing. Power can be secured. In this way, the radiation curable pressure-sensitive adhesive can support the die bond film 3 for fixing a chip-like work (semiconductor chip or the like) to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the die-bonding film with a dicing sheet 11 shown in FIG. 2, the portion 2b can fix the wafer ring.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy in terms of molecular design to introduce the carbon-carbon double bond into the polymer side chain. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  The radiation curable pressure-sensitive adhesive layer 2 can contain a compound that is colored by irradiation with radiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation, only the irradiated portion can be colored. That is, the portion 2a corresponding to the workpiece pasting portion 3a shown in FIG. 1 can be colored. Accordingly, whether or not the pressure-sensitive adhesive layer 2 has been irradiated with radiation can be immediately determined by visual observation, the workpiece pasting portion 3a can be easily recognized, and workpieces can be easily pasted together. In addition, when detecting a semiconductor chip by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor chip is picked up.

  A compound that is colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation, but becomes colored by radiation irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various known color formers can be used in combination.

  Such a compound that is colored by irradiation with radiation may be once dissolved in an organic solvent or the like and then included in the radiation-curable adhesive, or may be finely powdered and included in the pressure-sensitive adhesive. The use ratio of this compound is 10% by weight or less in the pressure-sensitive adhesive layer 2, preferably 0.01 to 10% by weight, and more preferably 0.5 to 5% by weight. If the proportion of the compound exceeds 10% by weight, the radiation applied to the pressure-sensitive adhesive layer 2 will be absorbed too much by this compound, so that the portion 2a of the pressure-sensitive adhesive layer 2 will be insufficiently cured and will be sufficiently sticky. Power may not decrease. On the other hand, in order to sufficiently color, it is preferable that the ratio of the compound is 0.01% by weight or more.

  When the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 2 is radiated so that the pressure-sensitive adhesive strength of the portion 2a in the pressure-sensitive adhesive layer 2 is smaller than the pressure-sensitive adhesive strength of the other portion 2b. It may be irradiated.

  Examples of the method for forming the portion 2a on the pressure-sensitive adhesive layer 2 include a method in which after the radiation-curable pressure-sensitive adhesive layer 2 is formed on the support substrate 1, the portion 2a is partially irradiated with radiation to be cured. It is done. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to the portion 3b other than the workpiece pasting portion 3a is formed. Moreover, the method etc. of irradiating and hardening | curing an ultraviolet-ray spotly are mentioned. The radiation curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the support substrate 1. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 2 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, all or a part of at least one side of the support substrate 1 other than the part corresponding to the workpiece pasting part 3a is shielded from light. The portion 2a with reduced adhesive strength can be formed by irradiating with radiation after forming the radiation-curable pressure-sensitive adhesive layer 2 on the substrate and curing the portion corresponding to the workpiece pasting portion 3a. . As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the die-bonding film 10 with a dicing sheet of this invention can be manufactured efficiently.

  In addition, when curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 2 by some method. For example, a method of coating the surface of the pressure-sensitive adhesive layer 2 with a separator, a method of irradiating ultraviolet rays or the like in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

The die bond films 3 and 3 ′ have a thermal conductivity of 1 W / m · K or more after thermosetting, preferably 1.2 W / m · K or more, and 1.5 W / m · K or more. Is more preferable. Since the thermal conductivity after thermosetting is 1 W / m · K or more, the semiconductor device manufactured using the die bond films 3 and 3 ′ is excellent in heat dissipation. In addition, although the heat conductivity after thermosetting of die-bonding films 3 and 3 'is so preferable that it is high, it is 20 W / m * K or less, for example.
In the present invention, “thermal conductivity after thermosetting” refers to the thermal conductivity after heating at 130 ° C. for 1 hour and then heating at 175 ° C. for 5 hours.

  The die bond films 3 and 3 ′ have a melt viscosity of 200 Pa · s or less, preferably in the range of 1 to 200 Pa · s, measured at a shear rate of 50 (1 / second) at 130 ° C., more Preferably, it is in the range of 20 to 185 Pa · s. Since the melt viscosity measured at a shear rate of 50 (1 / second) at 130 ° C., that is, the melt viscosity at high shear at 130 ° C. is 200 Pa · s or less, the die bond films 3 and 3 ′ are attached to the adherend. The viscosity of the thermosetting die-bonding film decreases due to the pressure applied. Accordingly, it is possible to sufficiently follow the unevenness of the adherend such as a printed wiring board and to suppress the generation of voids.

  The die bond films 3, 3 ′ have a melt viscosity at 130 ° C. measured at a shear rate of 5 (1 / second) within a range of 10 Pa · s to 300 Pa · s, and within a range of 20 Pa · s to 280 Pa · s. Preferably, it is within the range of 50 Pa · s to 250 Pa · s. Since the melt viscosity at 130 ° C. measured at a shear rate of 5 (1 / second) is within the range of 10 Pa · s to 300 Pa · s, the viscosity is relatively low while maintaining the shape of the film. Accordingly, it is possible to sufficiently follow the unevenness of the adherend such as a printed wiring board and to suppress the generation of voids.

  In addition, the die bond films 3 and 3 ′ contain 75% by weight or more and 80% by weight or more of thermally conductive particles having a thermal conductivity of 12 W / m · K or more with respect to the entire thermosetting die bond film. The content is preferably 85% by weight or more. The content of the heat conductive particles is preferably as much as possible, but is 93% by weight or less, for example, from the viewpoint of film forming properties. In order to contain 75% by weight or more of thermally conductive particles having a thermal conductivity of 12 W / m · K or more with respect to the entire thermosetting die bond film, a semiconductor device manufactured using the thermosetting die bond film is: Excellent heat dissipation. The thermal conductivity of the thermally conductive particles can be estimated from the crystal structure of the thermally conductive particles obtained by X-ray structural analysis.

  The thermally conductive particles are alumina particles (thermal conductivity: 36 W / m · K), zinc oxide particles (thermal conductivity: 54 W / m · K), aluminum nitride particles (thermal conductivity: 150 W / m · K). Silicon nitride particles (thermal conductivity: 27 W / m · K), silicon carbide particles (thermal conductivity: 200 W / m · K), magnesium oxide particles (thermal conductivity: 59 W / m · K), and boron nitride It is preferably at least one kind of particles selected from the group consisting of particles (thermal conductivity: 60 W / m · K). In particular, alumina has a high thermal conductivity, and is preferable in terms of dispersibility and availability. Boron nitride can be preferably used because of its higher thermal conductivity.

  The thermally conductive particles are preferably treated (pretreated) with a silane coupling agent. As a result, the dispersibility of the heat conductive particles becomes good, and the heat conductive particles can be highly filled.

  As the silane coupling agent, those containing a silicon atom, a hydrolyzable group and an organic functional group are preferable.

  The hydrolyzable group is bonded to the silicon atom.

  Examples of the hydrolyzable group include a methoxy group and an ethoxy group. Of these, a methoxy group is preferred because of its high hydrolysis rate and easy treatment.

  The number of hydrolyzable groups in the silane coupling agent can be cross-linked between the silane coupling agents while cross-linking with the heat conductive particles. From the point that the whole particle can be surface-treated with a silane coupling agent, the number is preferably 2 to 3, more preferably 3.

  The organic functional group is bonded to the silicon atom.

  As an organic functional group, what contains an acryl group, a methacryl group, an epoxy group, a phenylamino group etc. is mentioned, for example. Among them, an acrylic group is preferable because it has no reactivity with the epoxy resin and the storage stability of the thermally conductive particles that have been treated is good.

  In addition, since it will react with an epoxy resin when it has a functional group with high reactivity with an epoxy group, storage stability and fluidity | liquidity will fall. From the viewpoint of suppressing a decrease in fluidity, the organic functional group preferably does not contain a primary amino group, mercapto group or isocyanate group.

  The number of organic functional groups in the silane coupling agent is preferably one. Since the silicon atom has four bonds, if the number of organic functional groups is large, the number of hydrolyzable groups is insufficient.

  The silane coupling agent may further include an alkyl group bonded to the silicon atom. When the silane coupling agent contains an alkyl group, it is possible to make the reactivity lower than that of the methacryl group, and to prevent surface treatment bias due to abrupt reaction. Examples of the alkyl group include a methyl group and a dimethyl group. Of these, a methyl group is preferable.

  Specific examples of the silane coupling agent include 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3- Glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, N- Phenyl-3-aminopropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxyp Such as pills triethoxy silane.

  The method for treating thermally conductive particles with a silane coupling agent is not particularly limited, and is a wet method in which thermally conductive particles and a silane coupling agent are mixed in a solvent, thermally conductive particles and silane coupling in a gas phase. Examples include a dry method in which the agent is treated.

  The treatment amount of the silane coupling agent is not particularly limited, but it is preferable to treat 0.05 to 5 parts by weight of the silane coupling agent with respect to 100 parts by weight of the heat conductive particles.

  The shape of the heat conductive particles is not particularly limited. For example, flakes, needles, filaments, spheres, and scales can be used, but in terms of improving dispersibility and filling rate. A spherical one is preferred.

  The average particle size of the heat conductive particles is preferably 1 μm or more and 10 μm or less, and more preferably 1.5 μm or more and 8 μm or less. By setting the average particle size of the heat conductive particles to 1 μm or more, it is possible to ensure wettability to the adherend of the thermosetting die-bonding film and to exhibit good adhesiveness. Moreover, the thermal conductivity improvement effect by addition of a heat conductive particle can be made more favorable by the average particle diameter of the said heat conductive particle being 1 micrometer or less. Further, by setting the average particle size of the thermally conductive particles to 10 μm or less, the thickness of the thermosetting die-bonding film can be reduced, and as a result, the semiconductor chip can be highly laminated, and the thermosetting type Generation | occurrence | production of the chip crack by heat conductive particle protruding from a die-bonding film can be prevented. The average particle diameter of the thermally conductive particles is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  Further, as the heat conductive particles, two or more kinds of heat conductive particles having different average particle diameters may be used. This is because it is possible to easily improve the filling rate by using two or more kinds of thermally conductive particles having different average particle diameters.

  The laminated structure of the die bond films 3 and 3 ′ is not particularly limited, and examples thereof include a single-layer adhesive layer and a multilayer structure in which an adhesive layer is formed on one or both sides of the core material. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.

  The die bond films 3 and 3 ′ preferably include a resin component such as a thermoplastic resin and a thermosetting resin.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode the semiconductor chip is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive for die bonding. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF Type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., or bifunctional epoxy resin, or hydantoin type, trisglycidyl isocyanate An epoxy resin such as a nurate type or a glycidylamine type is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.
Moreover, the said epoxy resin can be used in combination of 2 types, a solid thing at room temperature (23 degreeC), and a liquid thing at room temperature (23 degreeC). By adding an epoxy resin that is liquid at room temperature to an epoxy resin that is solid at room temperature, the brittleness when forming a film can be improved, and workability can be improved.

  Further, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

Among the thermosetting resins (for example, epoxy resins and phenol resins), the melt viscosity at 130 ° C. of the thermosetting die-bonding film under the application of low shear stress (for example, shear rate 5 (1 / second)) is lowered. From the viewpoint that it can be made, those having a softening point of 100 ° C. or less are preferable.
Further, among the thermosetting resins (for example, epoxy resins and phenol resins), it is preferable to include those that are liquid at room temperature. When multiple types of thermosetting resins are included, at least one type of thermosetting resin may be liquid at room temperature. If the thermosetting resin contains a liquid at room temperature, it can sufficiently follow the unevenness of the adherend, and the generation of voids can be suppressed.
In addition, the softening point of an epoxy resin can be measured by the ring and ball method prescribed | regulated to JISK7234-1986. Moreover, the softening point of a phenol resin can be measured by the ring and ball method prescribed | regulated to JISK6910-2007.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. . More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  As a blending ratio of the thermosetting resin and the thermoplastic resin, A / B is 5 or more when the content part by weight of the thermosetting resin is A and the content part by weight of the thermoplastic resin is B. Preferably, it is 7 or more, more preferably 9 or more. In addition, in this specification, the molecular weight of a thermosetting resin is less than 5000, and the molecular weight of a thermoplastic resin is 5000 or more.

  The content of the resin component is preferably 7% by weight or more with respect to the entire die-bonding films 3, 3 '. The content of the resin component is preferably 25% by weight or less, more preferably 20% by weight or less, and still more preferably 15% by weight or less with respect to the entire die bond film 3, 3 '.

  As a compounding ratio of the thermosetting resin in the resin component (total amount of the thermosetting resin and the thermoplastic resin), the die-bonding films 3 and 3 ′ exhibit a function as a thermosetting type when heated under predetermined conditions. In order to reduce the melt viscosity at low shear (shear rate 5 (1 / sec)) at 130 ° C., it is preferably in the range of 75 to 99% by weight. More preferably, it is in the range of -98% by weight.

  Further, the blending ratio of the thermoplastic resin in the resin component is in the range of 1 to 25% by weight in order to reduce the melt viscosity at low shear (shear rate 5 (1 / second)) at 130 ° C. It is preferable that it is in the range of 2 to 15% by weight.

  The die bond films 3, 3 'preferably include a curing catalyst. Thereby, thermal curing with a curing agent such as an epoxy resin and a phenol resin can be promoted. Although it does not specifically limit as a curing catalyst, For example, tetraphenylphosphonium tetraphenylborate (brand name; TPP-K), tetraphenylphosphonium tetra-p-triborate (brand name; TPP-MK), triphenylphosphine triphenylborane ( Examples thereof include phosphorus-boron curing catalysts such as trade name: TPP-S (all manufactured by Hokuko Chemical Co., Ltd.). Among these, tetraphenylphosphonium tetra-p-triborate is preferable from the viewpoint that it has excellent latency and thus has good storage stability at room temperature.

  Although content of a curing catalyst can be set suitably, 0.1-3 weight part is preferable with respect to 100 weight part of thermosetting resins, and 0.5-2 weight part is more preferable.

  When the die-bonding films 3, 3 ′ of the present invention are previously crosslinked to some extent, a polyfunctional compound that reacts with the functional group at the molecular chain end of the polymer is added as a crosslinking agent during production. Is good. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  Moreover, fillers other than the said heat conductive particle can be suitably mix | blended with the die-bonding films 3 and 3 'according to the use. The blending of the filler enables adjustment of the elastic modulus. Examples of the filler include inorganic fillers and organic fillers. The inorganic filler is not particularly limited, and examples thereof include calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, aluminum borate whisker, crystalline silica, and amorphous silica. These can be used alone or in combination of two or more.

  In addition to the said filler, other additives can be suitably mix | blended with the die-bonding films 3 and 3 'as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The thickness of the die bond films 3 and 3 ′ (total thickness in the case of a laminate) is not particularly limited, but is preferably 1 to 200 μm from the viewpoint of chipping prevention of chip cut surfaces and compatibility of fixing and holding by an adhesive layer. More preferably, it is 3-100 micrometers, More preferably, it is 5-80 micrometers.

  The die-bonding films 10 and 12 with the dicing sheet have their circuits destroyed due to the generation of static electricity when the substrate 1, the pressure-sensitive adhesive layer, and the die-bonding film are bonded or peeled off, and charging of the semiconductor wafer or the like. In order to prevent this, an antistatic function can be provided. The antistatic function is imparted by a method of adding an antistatic agent or a conductive substance to the base material 1, the pressure-sensitive adhesive layer 2, or the die bond films 3, 3 ′, a conductive material comprising a charge transfer complex or a metal film to the base material 1. It can be performed by an appropriate method such as attachment of a layer. These systems are preferably systems that do not easily generate impurity ions that may alter the semiconductor wafer. Examples of the conductive substance (conductive filler) blended for the purpose of imparting conductivity and improving conductivity include spherical, acicular, and flaky metals such as silver, aluminum, gold, copper, nickel, and conductive alloys. Examples thereof include powder, amorphous carbon black, and graphite.

  It is preferable that the die bond films 3 and 3 ′ of the die bond films 10 and 12 with the dicing sheet are protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond films 3 and 3 ′ until they are put into practical use. Further, the separator can be used as a support base material when transferring the die bond films 3 and 3 ′ to the pressure-sensitive adhesive layer 2. The separator is peeled off when a workpiece is stuck on the die bond film 3, 3 'of the die bond film with a dicing sheet. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

The die-bonding films 10 and 12 with a dicing sheet concerning this Embodiment are produced as follows, for example.
First, the base material 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 1 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 2 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 2 may be formed. Then, the adhesive layer 2 is bonded together with the separator on the base material 1. Thereby, the dicing sheet 11 is produced.

The die bond films 3 and 3 ′ are produced, for example, as follows.
First, an adhesive composition that is a material for forming the die bond films 3 and 3 ′ is prepared. As described above, the adhesive composition contains a thermoplastic resin, a thermoplastic resin, thermally conductive particles, and other various additives as necessary. Usually, the adhesive composition is used in a solution state dissolved in a solvent or a dispersion state dispersed in a solvent (hereinafter, the solution state includes a dispersion state).

  Next, the adhesive composition solution is applied on the base separator to a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form an adhesive layer. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition solution on a separator and forming a coating film, you may dry an application film on the said drying conditions, and may form an adhesive bond layer. Then, an adhesive bond layer is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing sheet 11 and the adhesive layer, and the two are bonded together so that the adhesive layer and the pressure-sensitive adhesive layer become a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Next, the base material separator on the adhesive layer is peeled off, and the die bond films with dicing sheets 10 and 12 according to the present embodiment are obtained.

(Method for manufacturing semiconductor device)
The method for manufacturing a semiconductor device according to this embodiment includes a step of preparing the thermosetting die bond film,
A die-bonding step of die-bonding a semiconductor chip on an adherend via the thermosetting die-bonding film (hereinafter also referred to as a first embodiment).
Moreover, the method of manufacturing a semiconductor device according to the present embodiment includes a step of preparing the die bond film with a dicing sheet described above,
A bonding step of bonding the thermosetting die-bonding film of the die-bonding film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the thermosetting die bond film to form a chip-shaped semiconductor chip;
A pick-up step of picking up the semiconductor chip together with the thermosetting die-bonding film from the die-bonding film with the dicing sheet;
A die-bonding step of die-bonding the semiconductor chip on an adherend through the thermosetting die-bonding film (hereinafter also referred to as a second embodiment).
The semiconductor device manufacturing method according to the first embodiment is different from the semiconductor device manufacturing method according to the second embodiment in that the die bonding film with a dicing sheet is used. The manufacturing method is different in that the die bond film is used alone, and is common in other points. In the method for manufacturing a semiconductor device according to the first embodiment, after preparing a die bond film and performing a step of bonding it to a dicing sheet, thereafter, the method is the same as the method for manufacturing a semiconductor device according to the second embodiment. It can be. Therefore, hereinafter, a method for manufacturing a semiconductor device according to the second embodiment will be described.

  In the method for manufacturing a semiconductor device according to this embodiment, first, a die bond film with a dicing sheet is prepared (preparing step). The die bond films 10 and 12 with a dicing sheet are used as follows after appropriately separating the separator arbitrarily provided on the die bond films 3 and 3 ′. Hereinafter, the case where the die bond film with dicing sheet 10 is used will be described as an example with reference to FIG.

  First, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the die bond film 3 in the die bond film 10 with a dicing sheet, and this is bonded and held and fixed (bonding step). This step is performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not specifically limited, For example, it is preferable to exist in the range of 40-90 degreeC, and it is more preferable to exist in the range of 40-80 degreeC. Further, the bonding pressure at the time of mounting is not particularly limited, but from the viewpoint of reducing the viscosity of the die bond films 3 and 3 ′ by the pressure, it is preferably within a range of 0.01 to 1 MPa, and 0.1 to 0 More preferably within the range of 5 MPa.

  Next, dicing of the semiconductor wafer 4 is performed (dicing process). Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. Although the method of dicing is not particularly limited, for example, the dicing is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called full cut for cutting up to the die bond film 10 with a dicing sheet can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Moreover, since the semiconductor wafer is bonded and fixed by the die bond film 10 with a dicing sheet, chip breakage and chip jump can be suppressed, and damage to the semiconductor wafer 4 can be suppressed.

  Next, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip adhered and fixed to the die bond film 10 with a dicing sheet (pickup step). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 5 from the die bond film with dicing sheet 10 side with a needle and picking up the pushed semiconductor chip 5 with a pickup device, etc. can be mentioned.

  As pick-up conditions, the needle push-up speed is preferably 5 to 100 mm / sec, and more preferably 5 to 10 mm / sec in terms of preventing chipping.

  Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the die-bonding film 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, a well-known thing can be used as a light source used for ultraviolet irradiation. In addition, when the adhesive layer is preliminarily irradiated and cured and this cured adhesive layer and the die bond film are bonded together, the ultraviolet irradiation here is unnecessary.

  Next, the picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 via the die-bonding film 3 (die-bonding process). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by mounting a semiconductor chip and electrically connecting to the semiconductor chip.

Next, since the die bond film 3 is a thermosetting type, the semiconductor chip 5 is bonded and fixed to the adherend 6 by heat curing to improve the heat resistance (thermosetting step). The heating temperature can be 80 to 200 ° C, preferably 100 to 175 ° C, more preferably 100 to 140 ° C. The heating time can be 0.1 to 24 hours, preferably 0.1 to 3 hours, more preferably 0.2 to 1 hour. Moreover, you may perform heat hardening on pressurization conditions. The pressurization condition is preferably in a range of 1~20kg / cm ^2, in the range of 3~15kg / cm ² is more preferable. The heat curing under pressure can be performed, for example, in a chamber filled with an inert gas. In addition, what the semiconductor chip 5 adhere | attached and fixed to the board | substrate etc. via the die-bonding film 3 can use for a reflow process.

  The shear bond strength of the die-bonding film 3 after thermosetting is preferably 0.2 MPa or more with respect to the adherend 6, more preferably 0.2 to 10 MPa. When the shear bond strength of the die bond film 3 is at least 0.2 MPa or more, the bonding surface between the die bond film 3 and the semiconductor chip 5 or the adherend 6 by the ultrasonic vibration or heating in the wire bonding process. No shear deformation occurs. That is, the semiconductor chip does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  Next, if necessary, as shown in FIG. 3, the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by a bonding wire 7. (Wire bonding process). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. This step can be performed without thermosetting the die bond film 3.

  Next, as necessary, as shown in FIG. 3, the semiconductor chip 5 is sealed with a sealing resin 8 (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step can be performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. Thereby, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed through the die bond film 3. That is, in the present invention, even when the post-curing step described later is not performed, the die-bonding film 3 can be fixed in this step, which contributes to the reduction in the number of manufacturing steps and the manufacturing time of the semiconductor device. Can do. In this sealing step, a method of embedding the semiconductor chip 5 in a sheet-like sealing sheet (see, for example, JP 2013-7028 A) can also be employed.

  Next, heating is performed as necessary to completely cure the insufficiently cured sealing resin 8 in the sealing process (post-curing process). Even when the die bond film 3 is not completely thermoset in the sealing step, the die bond film 3 can be completely thermoset together with the sealing resin 8 in this step. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  In addition, the manufacturing method of the semiconductor device according to the present embodiment performs wire bonding without passing through the thermosetting process by heat treatment of the die bond film 3 after the temporary fixing by the die bonding process, and further, the semiconductor chip 5 is sealed with a sealing resin. It may be sealed and the sealing resin may be cured (post-cured). In this case, the shear adhesive force at the time of temporary fixing of the die bond film 3 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 6. Even if the wire bonding step is performed without passing through the heating step, the die bond film 3 and the semiconductor are bonded by the ultrasonic vibration or heating in the step, when the shear bonding force at the time of temporary fixing of the die bond film 3 is at least 0.2 MPa. Shear deformation does not occur on the bonding surface with the chip 5 or the adherend 6. That is, the semiconductor chip does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing. Temporary fixing means that the die-bonding film is cured (in a semi-cured state) to such an extent that the curing reaction of the thermosetting die-bonding film does not proceed completely so as not to hinder the subsequent steps. A state in which the semiconductor chip 5 is fixed. In addition, when performing wire bonding without passing through the thermosetting process by the heat processing of a die-bonding film, the said post-curing process is equivalent to the thermosetting process in this specification.

  In addition, the die-bonding film with a dicing sheet of this invention can be used suitably also when laminating | stacking a some semiconductor chip and carrying out three-dimensional mounting. At this time, the die bond film and the spacer may be laminated between the semiconductor chips, or only the die bond film may be laminated between the semiconductor chips without laminating the spacers. Is possible.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the gist of the present invention only to those unless otherwise specified. “Parts” means “parts by weight”.

Example 1
<Preparation of thermosetting die bond film>
The following (a) to (f) were dissolved in MEK (methyl ethyl ketone), the concentration was adjusted so that the viscosity was 150 mPa · s at room temperature, and an adhesive composition solution was obtained.
(A) Epoxy resin (Mitsubishi Chemical Corporation, product name: JER827 (bisphenol A type epoxy resin), liquid at room temperature (softening point is 25 ° C. or less))
9.5 parts (b) phenolic resin (phenolic resin having a biphenylaralkyl skeleton, manufactured by Meiwa Kasei Co., Ltd., product name: MEH-7851SS, softening point 67 ° C., hydroxyl group equivalent 203 g / eq.)
9.5 parts (c) acrylic copolymer (manufactured by Nagase ChemteX Corporation, product name: Teisan Resin SG-P3, weight average molecular weight: 850,000, glass transition temperature: 12 ° C.)
1 part (d) curing acceleration catalyst (manufactured by Hokuko Chemical Co., Ltd., product name: TPP-MK, tetraphenylphosphonium tetra-p-triborate)
0.2 part (e) spherical alumina filler A (manufactured by Denki Kagaku Kogyo Co., Ltd., product name: DAW-05, average particle size: 5.1 μm, specific surface area: 0.5 m ² / g)
60 parts (f) spherical alumina filler B (manufactured by Admatechs, product name: AO802, average particle size: 0.7 μm, specific surface area: 7.5 m ² / g)
20 copies

The spherical alumina filler A and the spherical alumina filler B were subjected to surface treatment in advance. The surface treatment was performed by a dry method, and was treated with a silane coupling agent in an amount represented by the following formula (silane coupling agent treatment amount). As a silane coupling agent, Shin-Etsu Chemical KBM503 was used.
(Silane coupling agent treatment amount) = (weight of alumina filler (g) × specific surface area of alumina filler (m ² / g)) / minimum coating area of silane coupling agent (m ² / g)
Minimum covering area of silane coupling agent (m ² /g)=6.02×10 ²³ × 13 × 10 ⁻²⁰ / Molecular weight of silane coupling agent

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness of 25 μm was produced.

(Example 2)
<Preparation of thermosetting die bond film>
The following (a) to (f) were dissolved in MEK (methyl ethyl ketone), the concentration was adjusted so that the viscosity was 150 mPa · s at room temperature, and an adhesive composition solution was obtained.
(A) Epoxy resin (Mitsubishi Chemical Corporation, product name: JER827 (bisphenol A type epoxy resin), liquid at room temperature (softening point is 25 ° C. or less))
6.5 parts (b) phenol resin (phenol resin having biphenyl aralkyl skeleton, manufactured by Meiwa Kasei Co., Ltd., product name: MEH-7851SS, softening point 67 ° C., hydroxyl group equivalent 203 g / eq.)
7 parts (c) acrylic copolymer (manufactured by Nagase ChemteX Corporation, product name: Teisan Resin SG-P3, weight average molecular weight: 850,000, glass transition temperature: 12 ° C.)
1.5 parts (d) curing accelerating catalyst (manufactured by Hokuko Chemical Co., Ltd., product name: TPP-MK, tetraphenylphosphonium tetra-p-triborate)
0.15 parts (e) spherical alumina filler A (manufactured by Denki Kagaku Kogyo Co., Ltd., product name: DAW-05, average particle size: 5.1 μm, specific surface area: 0.5 m ² / g)
60 parts (f) spherical alumina filler B (manufactured by Admatechs, product name: AO802, average particle size: 0.7 μm, specific surface area: 7.5 m ² / g)
25 copies

The spherical alumina filler A and the spherical alumina filler B were subjected to surface treatment in advance. The surface treatment was performed by a dry method, and was treated with a silane coupling agent in an amount represented by the following formula (silane coupling agent treatment amount). As a silane coupling agent, Shin-Etsu Chemical KBM503 was used.
(Silane coupling agent treatment amount) = (weight of alumina filler (g) × specific surface area of alumina filler (m ² / g)) / minimum coating area of silane coupling agent (m ² / g)
Minimum covering area of silane coupling agent (m ² /g)=6.02×10 ²³ × 13 × 10 ⁻²⁰ / Molecular weight of silane coupling agent

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film B having a thickness of 25 μm was produced.

(Comparative Example 1)
<Preparation of thermosetting die bond film>
The following (a) to (e) were dissolved in MEK (methyl ethyl ketone), the concentration was adjusted so that the viscosity was 150 mPa · s at room temperature, and an adhesive composition solution was obtained.
(A) Epoxy resin (Mitsubishi Chemical Corporation, product name: JER827 (bisphenol A type epoxy resin), liquid at room temperature (softening point is 25 ° C. or less))
8 parts (b) phenol resin (phenol resin having biphenyl aralkyl skeleton, manufactured by Meiwa Kasei Co., Ltd., product name: MEH-7851SS, softening point 67 ° C., hydroxyl group equivalent 203 g / eq.)
8 parts (c) acrylic copolymer (manufactured by Nagase ChemteX Corporation, product name: Teisan Resin SG-P3, weight average molecular weight: 850,000, glass transition temperature: 12 ° C.)
4 parts (d) curing accelerating catalyst (manufactured by Hokuko Chemical Co., Ltd., product name: TPP-MK, tetraphenylphosphonium tetra-p-triborate)
0.2 part (e) spherical alumina filler B (manufactured by Admatechs, product name: AO802, average particle size: 0.7 μm, specific surface area: 7.5 m ² / g)
80 copies

The spherical alumina filler B was subjected to surface treatment in advance. The surface treatment was performed by a dry method, and was treated with a silane coupling agent in an amount represented by the following formula (silane coupling agent treatment amount). As a silane coupling agent, Shin-Etsu Chemical KBM503 was used.
(Silane coupling agent treatment amount) = (weight of alumina filler (g) × specific surface area of alumina filler (m ² / g)) / minimum coating area of silane coupling agent (m ² / g)
Minimum covering area of silane coupling agent (m ² /g)=6.02×10 ²³ × 13 × 10 ⁻²⁰ / Molecular weight of silane coupling agent

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film C having a thickness of 25 μm was produced.

  In addition, the average particle diameter of the whole filler (spherical alumina filler A and spherical alumina filler B) in the die-bonding films according to Examples and Comparative Examples and the specific surface area of the whole filler are as shown in Table 1. Moreover, the value of A / B, the filling amount of the filler with respect to the whole die bond film, the ratio of the thermosetting resin in the resin component (in the total amount of the thermosetting resin and the thermoplastic resin), the resin component (the thermosetting resin) Table 1 also shows the ratio of the thermoplastic resin in the total amount of and the thermoplastic resin).

(Measurement of melt viscosity at high shear at 130 ° C. (shear rate 50 (1 / second))
The melt viscosity during high-speed shearing at 130 ° C. before thermosetting of the die bond films A to C was measured. The measurement was performed by a parallel plate method using a rheometer (manufactured by HAAKE, RS-1). That is, 0.1 g from each of the die bond films A to C was sampled and used as a sample, and this sample was loaded on a plate heated to 130 ° C. in advance. The melt viscosity was a value 300 seconds after the start of measurement. The shear rate was 50 (1 / second), and the gap between the plates was 0.1 mm. The results are shown in Table 1 below.

(Measurement of melt viscosity at low shear at 130 ° C (shear rate 5 (1 / second))
The melt viscosity at the time of low-speed shearing at 130 ° C. before thermosetting of the die bond films A to C was measured. The measurement was performed by a parallel plate method using a rheometer (manufactured by HAAKE, RS-1). That is, 0.1 g from each of the die bond films A to C was sampled and used as a sample, and this sample was loaded on a plate heated to 130 ° C. in advance. The melt viscosity was a value 300 seconds after the start of measurement. The shear rate was 5 (1 / second), and the gap between the plates was 0.1 mm. The results are shown in Table 1 below.

(Measurement of thermal conductivity)
The thermal conductivity after thermosetting of the die bond films A to C was measured. The thermal conductivity was obtained from the following formula. The results are shown in Table 1. In addition, the heat conductivity after thermosetting is a heat conductivity after heating at 130 degreeC for 1 hour, and subsequently heating at 175 degreeC for 5 hours.
(Thermal conductivity) = (thermal diffusion coefficient) x (specific heat) x (specific gravity)

<Thermal diffusion coefficient>.
After the die bond film was laminated to a thickness of 1 mm, it was punched into a circular shape having a diameter of 1 cm. Next, it was heated at 130 ° C. for 1 hour, and subsequently heated at 175 ° C. for 5 hours. Using this sample, the thermal diffusion coefficient was measured using a laser flash method thermal measurement apparatus (manufactured by ULVAC, TC-9000).

<Specific heat>
It calculated | required by the measuring method according to the specification of JIS-7123 using DSC (The product made from TA instrument, Q-2000).

<Specific gravity>
Measurement was performed by the Archimedes method using an electronic balance (manufactured by Shimadzu Corporation, AEL-200).

(Void evaluation)
Using a thermal laminate, the die bond films A to C having a thickness of 25 μm were attached to a glass chip having a thickness of 100 μm with an area of 10 mm × 10 mm to prepare a sample chip. The temperature at the time of pasting was 60 ° C., and the pressure was 0.15 MPa.
Next, the sample chip was placed on a BGA substrate (manufactured by Nippon Circuit Industry Co., Ltd., product name: CA-BGA (2), surface 10-point average roughness (Rz) = 11 to 13 μm) at 130 ° C., 2 kg, 2 seconds. Bonding was performed under the following conditions. Then, it heated at 130 degreeC on pressurization conditions for 1 hour, followed by heating at 175 degreeC for 5 hours. Specifically, the pressurization at the time of heat curing was performed by filling the oven with nitrogen gas at 5 kg / cm ² . It observed using the optical microscope from the glass surface side of the bonded sample chip | tip. The area occupied by the void in the observed image was calculated using binarization software (WinRoofer. 5.6). The case where the void occupied area was less than 20% with respect to the surface area of the die bond film was evaluated as “◯”, and the case where it was 20% or more was evaluated as “x”. The results are shown in Table 1.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3, 3 'Die bond film (thermosetting type die bond film)
4 Semiconductor wafer 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin 10, 12 Die bond film with dicing sheet 11 Dicing sheet

Claims (8)

The thermal conductivity after thermosetting is 1 W / m · K or more,
Containing 75% by weight or more of thermally conductive particles having a thermal conductivity of 12 W / m · K or more with respect to the entire thermosetting die-bonding film;
A thermosetting die-bonding film having a melt viscosity of 200 Pa · s or less measured at a shear rate of 50 (1 / second) at 130 ° C.   2. The thermosetting die-bonding film according to claim 1, wherein the heat conductive particles have an average particle size of 1 μm to 10 μm. Containing a thermoplastic resin and a thermosetting resin,
The heat according to claim 1 or 2, wherein A / B is 5 or more, where A is a content part by weight of the thermosetting resin and B is a content part by weight of the thermoplastic resin. Cured die bond film.   The thermosetting die-bonding film according to claim 3, wherein the thermosetting resin includes a softening point of 100 ° C. or less.   The thermosetting die-bonding film according to claim 3 or 4, wherein the thermosetting resin includes a liquid at room temperature. Preparing the thermosetting die-bonding film according to any one of claims 1 to 5,
A die bonding step of die-bonding a semiconductor chip on an adherend through the thermosetting die-bonding film.   A die-bonding film with a dicing sheet, wherein the thermosetting die-bonding film according to claim 1 is laminated on a dicing sheet in which an adhesive layer is laminated on a substrate. Preparing a die bond film with a dicing sheet according to claim 7;
A bonding step of bonding the thermosetting die-bonding film of the die-bonding film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the thermosetting die bond film to form a chip-shaped semiconductor chip;
A pick-up step of picking up the semiconductor chip together with the thermosetting die-bonding film from the die-bonding film with the dicing sheet;
A die-bonding step of die-bonding the semiconductor chip onto an adherend through the thermosetting die-bonding film.

Images