JP2012004550A - 半導体膜の作製方法、及び半導体装置の作製方法 - Google Patents
半導体膜の作製方法、及び半導体装置の作製方法 Download PDFInfo
- Publication number
- JP2012004550A JP2012004550A JP2011109717A JP2011109717A JP2012004550A JP 2012004550 A JP2012004550 A JP 2012004550A JP 2011109717 A JP2011109717 A JP 2011109717A JP 2011109717 A JP2011109717 A JP 2011109717A JP 2012004550 A JP2012004550 A JP 2012004550A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide semiconductor
- light
- semiconductor layer
- light transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 316
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 156
- 230000005540 biological transmission Effects 0.000 claims abstract description 122
- 238000000034 method Methods 0.000 claims abstract description 75
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 64
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 527
- 239000010408 film Substances 0.000 description 73
- 239000010409 thin film Substances 0.000 description 44
- 238000005530 etching Methods 0.000 description 35
- 239000000463 material Substances 0.000 description 34
- 229910007541 Zn O Inorganic materials 0.000 description 31
- 238000010438 heat treatment Methods 0.000 description 29
- 239000001257 hydrogen Substances 0.000 description 25
- 229910052739 hydrogen Inorganic materials 0.000 description 25
- 238000004544 sputter deposition Methods 0.000 description 22
- 230000002265 prevention Effects 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 9
- 229910052753 mercury Inorganic materials 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical group 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 206010034972 Photosensitivity reaction Diseases 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】透光性を有する酸化物半導体層をパターニングする際に、基板ステージからの散乱光を低減、もしくはその回り込みを少なくするために、基板ステージに光が到達しないように、光の透過を防止する機能を有する層をフォトレジスト層よりも下層に配置し、パターニングを行えばよい。さらに上記パターニング方法で形成した酸化物半導体層を用いて半導体装置を作製すればよい。
【選択図】図5
Description
本実施の形態では酸化物半導体層を、フォトリソグラフィ法を用いてパターニングする際、基板ステージからの散乱光の影響を抑制してパターニングを行い、酸化物半導体層を形成する方法の一例について、図1及び図5を用いて説明する。
本実施の形態では、実施の形態1で示した作製方法で作製した酸化物半導体層を用いて、薄膜トランジスタを作製する方法の一例について図2乃至図4を用いて説明する。
本実施の形態では、実施の形態1で示した方法とは異なる方法により、パターニングの際の光の影響を抑制した酸化物半導体層を形成する方法について、図6を用いて説明する。
本実施の形態では、実施の形態3で示した作製方法で作製した酸化物半導体層を用いて、実施の形態2とは構成の異なる薄膜トランジスタを作製する方法の一例について図7及び図8を用いて説明する。
101 酸化物半導体層
103 光透過防止層
105 フォトレジスト
107 フォトマスク
109 露光光
111 酸化物半導体層
113 光透過防止層
115 レジストマスク
117 基板ステージ
119 散乱光
121 下地層
125 フォトレジスト
131 下地層
200 薄膜トランジスタ
201 酸化物半導体層
203 光透過防止層
205 フォトレジスト
207 ゲート絶縁層
209 保護絶縁層
211 酸化物半導体層
213 光透過防止層
215 レジストマスク
217a ソース電極層
217b ドレイン電極層
219 ゲート電極層
220 薄膜トランジスタ
221 下地層
229 ゲート電極層
240 薄膜トランジスタ
260 薄膜トランジスタ
280 薄膜トランジスタ
Claims (4)
- 透光性を有する基板上に酸化物半導体層を形成し、
前記酸化物半導体層上に酸化物半導体が吸収する波長帯の光を吸収又は反射する光透過防止層を形成し、
前記光透過防止層上にポジ型の感光性を有するフォトレジスト層を形成し、
前記フォトレジスト層にフォトマスクを介して前記フォトレジスト層が感光する光を照射し、
前記光透過防止層上にレジストマスクを形成し、
前記レジストマスクと重なる領域を残して前記光透過防止層を除去し、
前記光透過防止層と重なる領域を残して前記酸化物半導体層を除去する、半導体膜の作製方法。 - 透光性を有する基板上に酸化物半導体が吸収する波長帯の光を吸収又は反射する光透過防止層を形成し、
前記光透過防止層上に酸化物半導体層を形成し、
前記酸化物半導体層上にポジ型の感光性を有するフォトレジスト層を形成し、
前記フォトレジスト層にフォトマスクを介して前記フォトレジスト層が感光する光を照射し、
前記酸化物半導体層上にレジストマスクを形成し、
前記レジストマスクと重なる領域を残して前記酸化物半導体層を除去する、半導体膜の作製方法。 - 透光性を有する基板上に互いに離間したソース電極層及びドレイン電極層を形成し、
前記ソース電極層及び前記ドレイン電極層の端部並びに当該間隙を覆う酸化物半導体層を形成し、
前記酸化物半導体層上に酸化物半導体が吸収する波長帯の光を吸収又は反射する光透過防止層を形成し、
前記光透過防止層上に、ポジ型の感光性を有するフォトレジスト層を形成し、
前記フォトレジスト層にフォトマスクを介して前記フォトレジスト層が感光する光を照射し、
前記光透過防止層上に前記ソース電極層及び前記ドレイン電極層の端部並びに当該間隙に重畳するレジストマスクを形成し、
前記レジストマスクと重なる領域を残して前記光透過防止層を除去し、
前記光透過防止層と重なる領域を残して前記酸化物半導体層を除去し、
前記酸化物半導体層に接してゲート絶縁層を形成し、
前記ゲート絶縁層に接し、前記間隙と重畳するゲート電極層を形成する、半導体装置の作製方法。 - 透光性を有する基板上に酸化物半導体が吸収する波長帯の光を吸収、又は反射する光透過防止層を形成し、
前記光透過防止層上に酸化物半導体層を形成し、
前記酸化物半導体層上にポジ型の感光性を有するフォトレジスト層を形成し、
前記フォトレジスト層にフォトマスクを介して前記フォトレジスト層が感光する光を照射し、
前記酸化物半導体層上にレジストマスクを形成し、
前記レジストマスクと重なる領域を残して前記酸化物半導体層を除去し、
前記酸化物半導体層と接し、互いに離間したソース電極層及びドレイン電極層を形成し、
前記酸化物半導体層並びに前記ソース電極層及び前記ドレイン電極層に接してゲート絶縁層を形成し、
前記ゲート絶縁層と接し、前記酸化物半導体層並びに前記ソース電極層及び前記ドレイン電極層の間隙と重畳するゲート電極層を形成する、半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011109717A JP5731899B2 (ja) | 2010-05-20 | 2011-05-16 | 半導体膜の作製方法、及び半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010116128 | 2010-05-20 | ||
JP2010116128 | 2010-05-20 | ||
JP2011109717A JP5731899B2 (ja) | 2010-05-20 | 2011-05-16 | 半導体膜の作製方法、及び半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012004550A true JP2012004550A (ja) | 2012-01-05 |
JP2012004550A5 JP2012004550A5 (ja) | 2014-06-26 |
JP5731899B2 JP5731899B2 (ja) | 2015-06-10 |
Family
ID=44972821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011109717A Expired - Fee Related JP5731899B2 (ja) | 2010-05-20 | 2011-05-16 | 半導体膜の作製方法、及び半導体装置の作製方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20110287593A1 (ja) |
JP (1) | JP5731899B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014168049A (ja) * | 2013-01-30 | 2014-09-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104900711B (zh) * | 2015-06-08 | 2019-11-05 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法以及阵列基板、显示装置 |
CN113345919B (zh) * | 2021-05-25 | 2023-07-04 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073663A (ja) * | 2005-09-06 | 2007-03-22 | National Institute Of Advanced Industrial & Technology | 半導体構造 |
JP2009033004A (ja) * | 2007-07-30 | 2009-02-12 | Fujifilm Corp | 薄膜素子とその製造方法、半導体装置 |
JP2009105218A (ja) * | 2007-10-23 | 2009-05-14 | Toshiba Corp | パターン形成方法 |
JP2010080552A (ja) * | 2008-09-24 | 2010-04-08 | Brother Ind Ltd | トランジスタの製造方法 |
WO2010047217A1 (en) * | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100294026B1 (ko) * | 1993-06-24 | 2001-09-17 | 야마자끼 순페이 | 전기광학장치 |
US5545588A (en) * | 1995-05-05 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of using disposable hard mask for gate critical dimension control |
US5741741A (en) * | 1996-05-23 | 1998-04-21 | Vanguard International Semiconductor Corporation | Method for making planar metal interconnections and metal plugs on semiconductor substrates |
US6010829A (en) * | 1996-05-31 | 2000-01-04 | Texas Instruments Incorporated | Polysilicon linewidth reduction using a BARC-poly etch process |
US6136679A (en) * | 1999-03-05 | 2000-10-24 | Taiwan Semiconductor Manufacturing Company | Gate micro-patterning process |
US6586339B1 (en) * | 1999-10-28 | 2003-07-01 | Advanced Micro Devices, Inc. | Silicon barrier layer to prevent resist poisoning |
US6461886B1 (en) * | 2000-05-13 | 2002-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6583440B2 (en) * | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
JP4655368B2 (ja) * | 2000-12-12 | 2011-03-23 | 日本電気株式会社 | 移動体端末 |
US6533907B2 (en) * | 2001-01-19 | 2003-03-18 | Symmorphix, Inc. | Method of producing amorphous silicon for hard mask and waveguide applications |
DE10138648A1 (de) * | 2001-08-07 | 2003-03-06 | Infineon Technologies Ag | Verfahren zum parallelen Herstellen eines MOS-Transistors und eines Bipolartransistors |
JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
TWI273637B (en) * | 2002-05-17 | 2007-02-11 | Semiconductor Energy Lab | Manufacturing method of semiconductor device |
US6680258B1 (en) * | 2002-10-02 | 2004-01-20 | Promos Technologies, Inc. | Method of forming an opening through an insulating layer of a semiconductor device |
US7078351B2 (en) * | 2003-02-10 | 2006-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist intensive patterning and processing |
JP4114064B2 (ja) * | 2003-05-27 | 2008-07-09 | 信越化学工業株式会社 | 珪素含有高分子化合物、レジスト材料及びパターン形成方法 |
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US8637340B2 (en) * | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
KR100711890B1 (ko) * | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101397571B1 (ko) * | 2005-11-15 | 2014-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제조방법 |
US7867907B2 (en) * | 2006-10-17 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR100867633B1 (ko) * | 2007-02-13 | 2008-11-10 | 삼성전자주식회사 | 티타늄 알루미늄 질화막의 형성 방법 및 이를 이용한상변화 메모리 소자의 형성 방법 |
TWI358832B (en) * | 2007-02-26 | 2012-02-21 | Au Optronics Corp | Semiconductor device and manufacturing method ther |
KR101345378B1 (ko) * | 2007-05-17 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5458367B2 (ja) * | 2007-07-09 | 2014-04-02 | Nltテクノロジー株式会社 | 薄膜トランジスタ及びその製造方法 |
CN101897031B (zh) * | 2007-12-13 | 2013-04-17 | 出光兴产株式会社 | 使用了氧化物半导体的场效应晶体管及其制造方法 |
US8080443B2 (en) * | 2008-10-27 | 2011-12-20 | Sandisk 3D Llc | Method of making pillars using photoresist spacer mask |
CN102054668B (zh) * | 2009-10-28 | 2012-02-22 | 中国科学院微电子研究所 | 电子束正性光刻胶Zep 520掩蔽介质刻蚀的方法 |
KR20230003647A (ko) * | 2010-07-02 | 2023-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
-
2011
- 2011-05-13 US US13/107,057 patent/US20110287593A1/en not_active Abandoned
- 2011-05-16 JP JP2011109717A patent/JP5731899B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073663A (ja) * | 2005-09-06 | 2007-03-22 | National Institute Of Advanced Industrial & Technology | 半導体構造 |
JP2009033004A (ja) * | 2007-07-30 | 2009-02-12 | Fujifilm Corp | 薄膜素子とその製造方法、半導体装置 |
JP2009105218A (ja) * | 2007-10-23 | 2009-05-14 | Toshiba Corp | パターン形成方法 |
JP2010080552A (ja) * | 2008-09-24 | 2010-04-08 | Brother Ind Ltd | トランジスタの製造方法 |
WO2010047217A1 (en) * | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014168049A (ja) * | 2013-01-30 | 2014-09-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110287593A1 (en) | 2011-11-24 |
JP5731899B2 (ja) | 2015-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5615540B2 (ja) | 半導体装置の作製方法 | |
TW586141B (en) | Semiconductor device and method of manufacturing the same | |
US10707236B2 (en) | Array substrate, manufacturing method therefor and display device | |
US7982215B2 (en) | TFT substrate and method for manufacturing TFT substrate | |
US20100283055A1 (en) | Tft substrate and tft substrate manufacturing method | |
KR20130136063A (ko) | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법 | |
JP6133476B2 (ja) | 半導体装置 | |
JP2010062549A5 (ja) | 半導体装置の作製方法、及び半導体装置 | |
KR20090075554A (ko) | 액정 표시 장치와 그 제조 방법 | |
JP2009267399A (ja) | 半導体装置,半導体装置の製造方法,表示装置及び表示装置の製造方法 | |
WO2011045960A1 (ja) | 薄膜トランジスタ、その製造方法及びそれを含む表示装置 | |
KR20130021607A (ko) | 저저항 배선, 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법 | |
US10431694B2 (en) | Thin film transistor, display apparatus having the same, and fabricating method thereof | |
US8558230B2 (en) | Thin film transistor substrate and method of fabricating the same | |
TW201340329A (zh) | 薄膜電晶體及其製作方法 | |
WO2013159513A1 (zh) | 薄膜晶体管及其制造方法、阵列基板和显示装置 | |
CN107799603B (zh) | 薄膜晶体管阵列面板及相关制造方法 | |
JP5731899B2 (ja) | 半導体膜の作製方法、及び半導体装置の作製方法 | |
CN107342260B (zh) | 一种低温多晶硅tft阵列基板制备方法及阵列基板 | |
WO2018032918A1 (zh) | 薄膜晶体管及其制备方法、显示基板及显示装置 | |
KR102120171B1 (ko) | 산화물 박막트랜지스터 어레이 기판 및 그 제조방법 | |
TWI759041B (zh) | 顯示面板及其製作方法 | |
TWI478351B (zh) | 陣列基板之形成方法 | |
KR101177873B1 (ko) | 박막트랜지스터 제조방법 | |
US11094540B2 (en) | Manufacturing method of a pair of different crystallized metal oxide layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140512 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140512 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150224 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150407 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150410 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5731899 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |