JP2010135682A - Method and apparatus for manufacturing pasted silicon wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a pasted silicon wafer which include a pasting process of pasting two silicon wafers together into a silicon wafer complex, is not affected by the shape of a silicon wafer before pasted, particularly not affected by the pushed-up shape of the outer periphery of the silicon wafer, and even if a pasting flaw such as a void exists on the outer periphery of the silicon wafer complex, eliminate the pasting flaw, and also to provide an apparatus for manufacturing the pasted silicon wafer. <P>SOLUTION: Part of the silicon wafer complex having undergone the pasting process is forcibly peeled off from the outer peripheral edge toward the interior, and then both are pasted again. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a bonded silicon wafer manufacturing method and manufacturing apparatus including a bonding process in which two silicon wafers are bonded to form a silicon wafer composite, and in particular, a void or the like is bonded to the outer peripheral portion of the silicon wafer composite. The present invention relates to a method and apparatus for manufacturing a bonded silicon wafer capable of eliminating such a bonding defect even if there is a bonding defect.

  When two silicon wafers are bonded together to form a silicon wafer composite and the silicon wafer is subjected to a predetermined process to produce a bonded silicon wafer, depending on the shape of the silicon wafer before bonding, the silicon wafer Voids are generated on the outer periphery of the composite. The silicon wafer before bonding is obtained by slicing the silicon wafer material from the silicon ingot, grinding and polishing the silicon wafer material, and the outer periphery of the silicon wafer rises during this grinding and polishing process. To do. In particular, a silicon wafer in which only one surface is mirror-polished tends to increase the outer peripheral portion. If the silicon wafers are shaped like a raised outer periphery, if these silicon wafers are bonded together, the raised parts will not be sufficiently bonded, and air will flow between the two silicon wafers. It remains and becomes a void.

As a technique for reducing the generation of voids due to the rise of the outer peripheral portion of a silicon wafer before bonding, Patent Document 1 discloses a manufacturing method for defining irregularities on the surface of a semiconductor wafer before bonding. .
Japanese Patent Laid-Open No. 9-232197

Patent Document 2 discloses a method in which a silicon wafer before being bonded is adsorbed in a curved shape, and bonded in a stepwise manner from the center to the periphery of the silicon wafer.
Japanese Unexamined Patent Publication No. 7-66093

  However, in the manufacturing method disclosed in Patent Document 1, it is necessary to improve the processing accuracy of the semiconductor wafer before bonding, leading to an increase in the manufacturing cost of the bonded semiconductor wafer. The method of Patent Document 2 requires a new process for adsorbing a silicon wafer in a curved surface, and thus increases the number of manufacturing steps. Even with these techniques, the incidence of voids after bonding was still high.

  The present invention has been made in view of the above circumstances, and in a method for manufacturing a bonded silicon wafer having a bonding process in which two silicon wafers are bonded to form a silicon wafer composite, Bonding capable of eliminating such bonding defects even if there are bonding defects such as voids on the outer periphery of the silicon wafer composite, regardless of the shape, especially the rising shape of the outer periphery of the silicon wafer An object of the present invention is to provide a silicon wafer manufacturing method and manufacturing apparatus.

  The inventors of the present invention have formed a silicon wafer composite by bonding two silicon wafers in various ways, and as a result of earnestly studying the void generation situation on the outer periphery of the silicon wafer, the inventors forcibly moved from the outer periphery to the inside of the silicon wafer composite. It was found that voids do not exist in the outer peripheral portion of the silicon wafer composite by partially peeling off and then re-bonding.

This invention is based on said knowledge, The summary structure is as follows.
In the method for manufacturing a bonded silicon wafer, which includes a bonding step in which 1.2 silicon wafers are bonded to form a silicon wafer composite,
A method for producing a bonded silicon wafer, wherein the silicon wafer composite after the bonding step is forcibly partially peeled from the outer peripheral edge toward the inside, and then bonded again.

2. 2. The method for producing a bonded silicon wafer according to 1 above, wherein bonding defects such as voids existing in the silicon wafer composite are eliminated by the rebonding.

3. The partial peeling is performed by inserting a predetermined jig into the bonding surface of the silicon wafer composite, and the rebonding is performed by pulling out the jig from the bonding surface. 3. The method for producing a bonded silicon wafer according to 1 or 2 above.

4). 4. The method for producing a bonded silicon wafer according to 3 above, wherein the jig is made of a resin material.

5. Irradiate infrared light to the outer periphery of the silicon wafer composite, detect the transmitted light or reflected light of the infrared light by infrared light detection means, and bond the bonded to the outer peripheral part of the silicon wafer composite 5. The method for producing a bonded silicon wafer according to any one of 1 to 4, wherein partial peeling is performed only when a defect (void) is detected.

6). It is a manufacturing apparatus of the bonded silicon wafer used for the manufacturing method of any one of said 1-5,
Conveying means for supplying a silicon wafer composite in which two silicon wafers are bonded together;
A mounting means capable of rotating the silicon wafer composite;
At least one jig that is disposed opposite the outer peripheral edge of the silicon wafer composite and can be inserted into the bonding surface of the silicon wafer composite;
Jig moving means for moving the jig so that it can be inserted and removed in a direction parallel to the bonding surface;
An apparatus for manufacturing a bonded silicon wafer, comprising: lifting means disposed on at least one of the placing means and the jig moving means and capable of moving up and down in a direction perpendicular to the bonding surface.

7). 7. The bonded silicon wafer manufacturing apparatus according to claim 6, comprising a plurality of the jigs.

8). The manufacturing apparatus further includes:
An infrared light irradiation means for irradiating the silicon wafer composite with infrared light;
8. The bonded silicon wafer manufacturing apparatus according to claim 6 or 7, further comprising infrared light detecting means for detecting transmitted light or reflected light of the infrared light irradiated on the silicon wafer composite.

9. The manufacturing apparatus further includes:
There is provided a bonding defect detecting means for detecting the presence of a bonding defect such as a void in a portion irradiated with the infrared light of the silicon wafer composite from transmitted light or reflected light detected by the light detecting means. 9. The bonded silicon wafer manufacturing apparatus as described in 8 above.

10. 10. The bonded silicon wafer manufacturing apparatus according to any one of claims 6 to 9, wherein the jig is made of a resin material.

  According to the present invention, in the method for manufacturing a bonded silicon wafer including a bonding process in which two silicon wafers are bonded to form a silicon wafer composite, the silicon wafer composite after the bonding process is removed from the outer periphery. Even if there is a bonding defect such as a void in the outer periphery of the silicon wafer composite, it is possible to eliminate the bonding defect by forcibly separating the inner part and then re-bonding. A bonded silicon wafer can be obtained.

  Further, according to the present invention, when two silicon wafers are bonded together to form a silicon wafer composite, a silicon wafer composite in which a bonding defect such as a void has occurred in the outer peripheral portion of the silicon wafer composite. As for the body as well, by forcibly partially peeling from the outer periphery to the inside, and then re-bonding, the voids are not attached to the outer periphery of the silicon wafer composite, so that the voids are attached to the outer periphery. A bonded silicon wafer having no alignment defect can be obtained.

Hereinafter, the present invention will be described in detail.
The bonded silicon wafer is manufactured by bonding two silicon wafers, but the silicon wafer used in the present invention is not particularly limited as long as it is normally used for bonded silicon wafers. For example, a silicon wafer material is sliced from a single crystal silicon ingot, the outer periphery of the silicon wafer material is chamfered, and then both surfaces are lapped. The lapped silicon wafer material is immersed in an etching solution to remove distortion introduced during chamfering or lapping, and then the chamfered surface of the outer peripheral portion is mirror-finished with a polishing cloth. The silicon wafer is polished. In addition, as a silicon wafer used by this invention, both the silicon wafer which mirror-polished single side | surface and the silicon wafer which grind | polished both surfaces can be used. In addition, in order to make the bonded silicon wafer an SOI wafer having a buried insulating layer (oxide layer), a silicon wafer material on which an insulating layer (oxide layer) is formed can be used.

  The two silicon wafers thus obtained are cleaned by a conventional method and then bonded to form a silicon wafer composite. In the silicon wafer composite, two silicon wafers are bonded together by van der Waals force. The manufacturing method of the bonded silicon wafer of the present invention is to forcibly partially peel the silicon wafer composite from the outer peripheral edge toward the inside, and then perform the rebonding.

  In general, the silicon wafer composite is subjected to a bonding strengthening heat treatment, but in the partial peeling and rebonding according to the present invention, two silicon wafers are bonded by van der Waals force. It is necessary to carry out before the bonding strengthening heat treatment.

  FIG. 1 is a plan view of a first embodiment of the present invention when a silicon wafer composite is forcibly partially peeled from its outer peripheral edge toward the inside as seen through from the surface side of the silicon wafer composite. It is.

  The silicon wafer composite 10 shown in the figure is formed by bonding two silicon wafers 20a and 20b (see FIG. 4), and silicon is peeled off from the peeling start point 40, which is one of the outer peripheral edges 30 of the silicon wafer composite 10. When the partial peeling is forced toward the inside of the wafer composite, a peeling region 50 is formed while a convex curve is drawn on the opposite side with respect to the peeling start point 40. At 50, re-bonding occurs.

  Here, when the distance between the peeling start point 40 shown in FIG. 1 and the vertex of the convex curve on the opposite side to the peeling start point 40 is L, and the diameter of the silicon wafer composite 10 is S, this distance L Although there is no restriction | limiting in particular about the lower limit of this, When distance L exceeds S / 5, there exists a possibility that the whole bonding surface may peel. Therefore, the distance L is preferably S / 5 or less. More preferably, it is S / 10 or less.

  FIG. 2 is a perspective view of the second embodiment of the present invention as seen through the surface side of the silicon wafer composite before the silicon wafer composite is forcibly partially peeled from the outer peripheral edge toward the inside. It is a top view.

  The silicon wafer composite 10 in FIG. 2 is formed by bonding two silicon wafers 20a and 20b, and a void 60 is present on the outer periphery of the silicon wafer composite 10. When the silicon wafer composite 10 in which the void 60 is present is forcibly partially peeled from the peeling start point 45 toward the inside, a peeling region is formed as in the first embodiment, and When the forced partial peeling is released, re-bonding occurs in the peeling region, and as a result, if a bonding defect such as void 60 exists in the peeling region 50, the void 60 can be lost. . Although the case of a void is taken up in FIG. 2, the same result can be obtained if there is no foreign matter on the bonding surface.

  That is, as shown in the first and second embodiments, regardless of the presence or absence of voids on the bonding surface of the silicon wafer composite, the silicon wafer composite is forcibly partially peeled and then bonded again. Thus, a silicon wafer composite having no voids or the like in the outer peripheral portion can be obtained. Therefore, the silicon wafer composite is subjected to void inspection with infrared light, and not only is the void repaired for the silicon wafer composite in which the void is generated, but the entire circumference of the outer periphery of the silicon wafer composite is partially By performing peeling and re-bonding, it is possible to omit inspection of the silicon wafer composite with infrared light.

  Forcible partial peeling can be performed by inserting a predetermined jig into the bonding surface of the silicon wafer composite, and rebonding can be performed by pulling out the jig from the bonding surface. .

  FIG. 3 is a plan view when a state in which a predetermined jig is inserted into the bonding surface of the silicon wafer composite is seen through from the surface side of the silicon wafer. 4 is a schematic side view when the state of FIG. 3 is viewed from the side.

  As shown in FIG. 3, by inserting the tip of the jig 70 at the peeling start point 40, a peeling region 50 similar to that of the first embodiment shown in FIG. 1 is formed. Further, by pulling out the jig 70, re-bonding can be caused as in the case of the first embodiment.

  Further, as shown in FIG. 4, the jig 70 is preferably inserted so that the center axis 80 of the jig 70 is aligned with the bonding surface 65. Further, as the tip shape of the jig 70, the dimension in the direction perpendicular to the bonding surface 65 spreads in a divergent shape with the bonding surface 65 as the center line as it moves away from the tip of the jig 70. Preferably it is. This is because when the tip of the jig 70 is inserted, partial peeling can be caused evenly between the upper silicon wafer 20a and the lower silicon wafer 20b.

  The jigs 70A, 70B, and 70C are not limited to the tip shapes shown in FIG. 4, but may have the shapes shown in FIGS. 5 (a) to 5 (c). 5A to 5C, the upper stage is a plan view and the lower stage is a side view, respectively.

  The material of the jig 70 is made of a resin material in order to prevent the silicon wafer composite 10 from being scratched or contaminated with metal when the jig 70 is inserted into the bonding surface 65 of the silicon wafer composite 10. Is preferred. Specifically, polytetrafluoroethylene (PTFE) and polyether ether ketone (PEEK (registered trademark)) are preferable.

  Further, in the present invention, infrared light is irradiated to the outer peripheral portion of the silicon wafer composite, and the transmitted light or reflected light of the infrared light is detected by infrared light detection means, and the silicon wafer composite The silicon wafer composite may be partially peeled only when the bonding defect is detected on the outer periphery.

  FIG. 6 schematically shows a method of irradiating infrared light 90 to the outer peripheral portion of the silicon wafer composite and detecting transmitted light or reflected light of the infrared light by an infrared light detecting means. It is. 6A shows a case where transmitted light 92 is detected, and FIG. 6B shows a case where reflected light 94 is detected.

  In the case shown in FIG. 6A, the silicon wafer composite 10 is placed on the mounting means 100 that can rotate the silicon wafer composite 10 and above the outer peripheral portion 15 of the silicon wafer composite 10. An infrared light generator 130 is installed below the outer peripheral portion 15 of the infrared light camera 120 and the silicon wafer composite 10 connected to the computing means 110. Infrared light 90 generated by the infrared light generating means 130 is applied to the outer peripheral portion 15 of the silicon wafer composite 10, passes through the silicon wafer composite 10, and the transmitted light 92 reaches the infrared light camera 120. . The intensity information of the transmitted light 92 that has reached the infrared camera 120 is transmitted to the arithmetic device 110, and it is detected whether a void exists in the outer peripheral portion 15 of the silicon wafer composite 10. The jig 70 is inserted into the bonding surface of the silicon wafer composite 10 only when a bonding defect such as a void is detected. In addition, by rotating the silicon wafer composite 10 by the mounting means 110, it is possible to detect a bonding defect over the entire circumference of the outer peripheral portion 15 of the silicon wafer composite 10.

  In the case shown in FIG. 6B, an infrared light camera 120 and an infrared light generation means 130 are installed above the silicon wafer composite 10, and the infrared light 90 generated by the infrared light generation means 130 is changed. Except for reflecting on the surface of the silicon wafer composite 10 and detecting the reflected light 94 with the infrared camera 120, the configuration is the same as in FIG.

  The bonded silicon wafer manufacturing apparatus 200 used in the bonded silicon wafer manufacturing method described so far includes a conveying means 100, a placing means 100, a jig 70, a jig moving means 180, and an elevating means 185. With.

  The transport means 100 supplies a silicon wafer composite in which two silicon wafers are bonded together. The mounting means 100 enables the silicon wafer composite 10 to rotate. The jig 70 is disposed so as to face the outer peripheral edge of the silicon wafer composite, and can be inserted into the bonding surface of the silicon wafer composite 10. The jig moving means 180 moves the jig 70 so that it can be inserted and removed in a direction parallel to the bonding surface. The raising / lowering means 185 is disposed on at least one of the placing means 100 and the jig moving means 180, and can be raised and lowered in a direction perpendicular to the bonding surface.

  Further, a plurality of the jigs can be provided.

  FIG. 7 is a schematic diagram showing the positional relationship between the silicon wafer composite and the jig 70 when five jigs 70 are provided. Each jig 70 is provided at a predetermined interval along the outer peripheral edge of the silicon wafer composite 10, and is attached to a holder 140. Each jig 70 is simultaneously attached to the bonding surface of the silicon wafer composite 10. Inserted.

  In the present invention, the manufacturing apparatus further includes infrared light irradiation means for irradiating the silicon wafer composite with infrared light, and transmitted or reflected light of the infrared light applied to the silicon wafer composite. Infrared light detecting means for detecting.

  Further, the manufacturing apparatus further has a bonding defect such as a void in a portion irradiated with the infrared light of the silicon wafer composite from the transmitted light or reflected light detected by the infrared light detecting means. Bonding defect detection means for detecting can be provided.

  FIG. 8 is a schematic view showing an embodiment of the bonded silicon wafer manufacturing apparatus of the present invention.

  The silicon wafer composite 10 is taken out from the load place 162 of the product storage unit 160 using the transfer unit 150 and supplied to the mounting unit 170. After the height of the bonding surface of the tip of the jig 70 and the silicon wafer composite 10 is adjusted by lifting means (not shown) provided in the mounting means 170, the jig moving means 180 is placed on the mounting means. The jig 70 is advanced in the direction of 170, and the jig 70 is inserted into the bonding surface of the silicon wafer composite 10, and then pulled out. Then, the mounting means 170 is rotated, and the jig 70 is similarly inserted and extracted from another outer peripheral portion of the silicon wafer composite 10. When the planned insertion / extraction is completed, the transfer means 150 is used to move the silicon wafer composite 10 from the mounting means 170 to the unloading location 162 of the product storage means 160 from the mounting means 170, and one silicon wafer. The process flow for the composite 10 ends. This process flow can be performed automatically. In addition, a process by the pretreatment means 190 can be added to this process flow. As pre-processing means, for example, there is an orientation flat adjusting means.

  In addition, the place mentioned above only showed an example of embodiment of this invention, and can change variously in a claim.

A sample was prototyped according to the present invention and will be described below.
(Invention Example 1)
Two silicon wafers with a diameter of 200 mm are bonded together through an insulating layer to form a silicon wafer composite, and void inspection is not performed, and silicon wafers are formed on the silicon wafer using a jig having the shape shown in FIG. Partial peeling and rebonding were performed on the outer periphery of the composite to prepare a sample. The number of jigs was one. The material of the jig was polyether ether ketone.

(Invention Example 2)
Using the apparatus according to the present invention shown in FIG. 6 (a) or FIG. 6 (b), there is a void at a position of 3 to 5 mm from the outer peripheral edge of the silicon wafer in the void inspection by infrared light transmission or reflection. A sample was prepared in the same manner as in Invention Example 1 except that partial peeling and rebonding were performed around the void.

(Invention Example 3)
Samples were prepared in the same manner as in Example 2 except that five jigs were arranged so that partial peeling / re-bonding was performed around the void, and partial peeling / re-bonding was performed.

(Invention Example 4)
A sample was prepared in the same manner as in Invention Example 2, except that two silicon wafers were directly bonded without interposing an insulating layer.

(Comparative Example 1)
A sample was prepared in the same manner as in Invention Example 2, except that the shape of the tip of the jig used was the shape shown in FIG. FIG. 9 is a schematic diagram illustrating the jig shape of Comparative Example 1, in which the upper stage is a front view and the lower stage is a cross-sectional view at the center line in the front view.

(Comparative Example 2)
A sample was prepared in the same manner as in Invention Example 2, except that the jig used was made of stainless steel.

  Each sample thus obtained was subjected to void inspection with infrared light. The results are shown in Table 1.

  As is apparent from the table, it was confirmed that no voids existed after partial peeling and rebonding in all the inventive examples.

  According to the present invention, in the method for manufacturing a bonded silicon wafer including a bonding process in which two silicon wafers are bonded to form a silicon wafer composite, the silicon wafer composite after the bonding process is removed from the outer periphery. Even if there is a bonding defect such as a void in the outer periphery of the silicon wafer composite, it is possible to eliminate the bonding defect by forcibly separating the inner part and then re-bonding. A bonded silicon wafer can be obtained.

  Further, according to the present invention, when two silicon wafers are bonded together to form a silicon wafer composite, a silicon wafer composite in which a bonding defect such as a void has occurred in the outer peripheral portion of the silicon wafer composite. As for the body as well, by forcibly partially peeling from the outer periphery to the inside, and then re-bonding, the voids are not attached to the outer periphery of the silicon wafer composite, so that the voids are attached to the outer periphery. A bonded silicon wafer having no alignment defect can be obtained.

It is a top view when the state which forcedly peeled the silicon wafer composite body from the outer periphery to the inside about the 1st Embodiment of this invention was seen through from the surface side of the silicon wafer composite body. FIG. 10 is a plan view of the second embodiment of the present invention when the silicon wafer composite is seen through from the surface side of the silicon wafer composite before the silicon wafer composite is forcibly partially peeled from the outer periphery toward the inside. . It is the schematic diagram which looked at the state which inserted the predetermined jig | tool into the bonding surface of the silicon wafer composite body from the surface side of the silicon wafer. It is the schematic diagram which showed the state of FIG. 3 in the cross section of the silicon wafer composite_body | complex. (A)-(c) It is a schematic diagram which illustrates the suitable shape of the front-end | tip of a jig | tool, an upper stage is a front view, and a lower stage is sectional drawing in the centerline in a front view. FIG. 6 is a schematic diagram showing a method of irradiating the outer peripheral portion of the silicon wafer composite with infrared light, and detecting the transmitted light or reflected light of the infrared light by an infrared light detecting means. ) Is a schematic diagram in the case of detecting transmitted light, and FIG. 6B is a schematic diagram in the case of detecting reflected light. It is a schematic diagram which shows the positional relationship of a silicon wafer composite body and a jig | tool in the case of providing five jigs. It is a schematic diagram which shows one Embodiment of the manufacturing apparatus of the bonded silicon wafer of this invention. It is a schematic diagram which shows the jig | tool shape of the comparative example 1, an upper stage is a front view, and a lower stage is sectional drawing in the centerline in a front view.

Explanation of symbols

10 Silicon wafer composite
15 outer periphery
20, 20a, 20b Silicon wafer before bonding
30 Outer periphery of silicon wafer composite
40 Starting point of peeling
45 Scheduled start of peeling
50 Peeling area
60 void
65 Bonding surface
70, 70A, 70B, 70C Jig
80 Center axis
90 infrared light
92 Transmitted light
94 Reflected light
100 Mounting means
110 Calculation means
120 infrared camera
130 Infrared light generation means
150 Transport means
160 Product storage means
162 Road location
164 Unloading place
170 Mounting means
180 Jig moving means
190 Pretreatment means
200 Bonded silicon wafer manufacturing equipment

Claims (10)

In the method for manufacturing a bonded silicon wafer, which includes a bonding step in which two silicon wafers are bonded to form a silicon wafer composite,
A method for producing a bonded silicon wafer, wherein the silicon wafer composite after the bonding step is forcibly partially peeled from the outer peripheral edge toward the inside and then rebonded.   The method for producing a bonded silicon wafer according to claim 1, wherein bonding defects such as voids existing in the silicon wafer composite are eliminated by the rebonding.   The partial peeling is performed by inserting a predetermined jig into the bonding surface of the silicon wafer composite, and the rebonding is performed by pulling out the jig from the bonding surface. The manufacturing method of the bonded silicon wafer of Claim 1 or 2.   4. The method for manufacturing a bonded silicon wafer according to claim 3, wherein the jig is made of a resin material.   Irradiate infrared light to the outer periphery of the silicon wafer composite, detect the transmitted light or reflected light of the infrared light by infrared light detection means, and bond the bonded to the outer peripheral part of the silicon wafer composite The method for producing a bonded silicon wafer according to any one of claims 1 to 4, wherein partial peeling is performed only when a defect (void) is detected. It is a manufacturing apparatus of the bonded silicon wafer used for the manufacturing method according to any one of claims 1 to 5,
Conveying means for supplying a silicon wafer composite in which two silicon wafers are bonded together;
A mounting means capable of rotating the silicon wafer composite;
At least one jig that is disposed opposite the outer peripheral edge of the silicon wafer composite and can be inserted into the bonding surface of the silicon wafer composite;
Jig moving means for moving the jig so that it can be inserted and removed in a direction parallel to the bonding surface;
An apparatus for manufacturing a bonded silicon wafer, comprising: lifting means disposed on at least one of the placing means and the jig moving means and capable of moving up and down in a direction perpendicular to the bonding surface.   The bonded silicon wafer manufacturing apparatus according to claim 6, comprising a plurality of the jigs. The manufacturing apparatus further includes:
An infrared light irradiation means for irradiating the silicon wafer composite with infrared light;
8. The bonded silicon wafer manufacturing apparatus according to claim 6, further comprising infrared light detecting means for detecting transmitted light or reflected light of the infrared light irradiated on the silicon wafer composite. . The manufacturing apparatus further includes:
There is provided a bonding defect detecting means for detecting the presence of a bonding defect such as a void in a portion irradiated with the infrared light of the silicon wafer composite from transmitted light or reflected light detected by the light detecting means. The bonded silicon wafer manufacturing apparatus according to claim 8.   The said jig | tool consists of resin materials, The manufacturing apparatus of the bonded silicon wafer of any one of Claims 6-9 characterized by the above-mentioned.

Images