Nothing Special   »   [go: up one dir, main page]

JP2010182864A - Electronic component device - Google Patents

Electronic component device Download PDF

Info

Publication number
JP2010182864A
JP2010182864A JP2009024799A JP2009024799A JP2010182864A JP 2010182864 A JP2010182864 A JP 2010182864A JP 2009024799 A JP2009024799 A JP 2009024799A JP 2009024799 A JP2009024799 A JP 2009024799A JP 2010182864 A JP2010182864 A JP 2010182864A
Authority
JP
Japan
Prior art keywords
ground conductor
dielectric substrate
transmission line
surface ground
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009024799A
Other languages
Japanese (ja)
Inventor
Hirosuke Fujiwara
啓輔 藤原
Yoshiaki Isobe
善朗 礒部
Hideaki Arai
秀明 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2009024799A priority Critical patent/JP2010182864A/en
Publication of JP2010182864A publication Critical patent/JP2010182864A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Waveguides (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a miniaturizable electronic component device with a simple structure, and formed by considering improvement of transmission characteristics by influence of a high-frequency ground current. <P>SOLUTION: This electronic component device includes: a dielectric substrate 1; a grounded conductor 2 formed on the back surface of the dielectric substrate; a transmission line installed on the front surface of the dielectric substrate through a space region; an active element 6 mounted on the front surface of the dielectric substrate in the space region of the transmission line for amplifying power of a microwave signal passing through the transmission line; grounding leads 6c of the active element extending from the active element and projecting to recede away from the transmission line; first front surface ground conductors 5 electrically connected to the grounding leads by electric connection means and formed on the front surface of the dielectric substrate; second front surface ground conductors 7 electrically connected to the first front surface ground conductors through patterns on the transmission line side of the first front surface ground conductors; through-hole parts 8 formed on the second front surface ground conductors and electrically connected to the grounded conductor; and dams 9 formed on the dielectric substrate front surface for preventing the electric connection means from impregnating into the through-hole parts. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

この発明は、送受信モジュールやアンテナ装置などに搭載する電子部品装置に関する。 The present invention relates to an electronic component device mounted on a transmission / reception module, an antenna device, or the like.

誘電体基板上の伝送線路に半導体デバイスなどを簡易な構造で実装し、小型化が可能な電子部品装置の改良が望まれる。特にマイクロ波帯域における高周波グランド電流による伝送特性の改善は重要である。例えば、特開2001−144221号公報図3(特許文献1参照)には、基板部材1aa及び外表面のマイクロストリップ線路パターン2aを第1の接地導体4aよりも内側に配置した高周波回路が開示されている。 It is desired to improve an electronic component device that can be miniaturized by mounting a semiconductor device or the like on a transmission line on a dielectric substrate with a simple structure. In particular, it is important to improve the transmission characteristics due to the high-frequency ground current in the microwave band. For example, FIG. 3 of Japanese Patent Laid-Open No. 2001-144221 (refer to Patent Document 1) discloses a high-frequency circuit in which a substrate member 1aa and a microstrip line pattern 2a on the outer surface are arranged inside a first ground conductor 4a. ing.

また、特開2008−85796号公報図2(特許文献2参照)には、グランド導体15と連続したグランドストリップ導体22の反対側表面にスルーホールを介してグランドストリップ導体23を配置した高周波回路基板が開示されている。 Further, FIG. 2 (see Patent Document 2) of Japanese Patent Laid-Open No. 2008-85796 discloses a high frequency circuit board in which a ground strip conductor 23 is disposed on a surface opposite to a ground strip conductor 22 continuous with the ground conductor 15 through a through hole. Is disclosed.

特開2001−144221号公報(第3図)JP 2001-144221 A (FIG. 3) 特開2008−85796号公報(第2図)Japanese Patent Laying-Open No. 2008-85796 (FIG. 2)

しかしながら、特許文献1に記載のものは、接続用基板104を多層高周波パッケージ101aと外部回路101bとの間に配線することでグランド電流11を最短距離で接続できるものの、多層構造の誘電体基板が幾重にも重ねて設けられており、良好な高周波特性を維持するには多層基板の種類や適用可能な基板厚に対して限界があり、コスト的にも高価になるという課題がある。   However, although the thing of patent document 1 can connect the ground current 11 in the shortest distance by wiring the connection board | substrate 104 between the multilayer high frequency package 101a and the external circuit 101b, the dielectric substrate of multilayer structure is In order to maintain good high frequency characteristics, there is a limit to the type of multilayer substrate and applicable substrate thickness, and there is a problem that it is expensive in terms of cost.

また、特許文献2に記載のものは、グランドストリップ導体22およびグランドストリップ導体23の線路長を調整することにより、所望の周波数においてワイヤ26bと半導体チップのグランドの接続部がショートになり、良好な伝送モードの変換を行えるものの所望周波数によってグランドストリップ導体22、23の調整が必要であるという課題がある。 In addition, in the device described in Patent Document 2, by adjusting the line lengths of the ground strip conductor 22 and the ground strip conductor 23, the connection portion between the wire 26b and the ground of the semiconductor chip is short-circuited at a desired frequency. Although the transmission mode can be converted, there is a problem that the ground strip conductors 22 and 23 need to be adjusted depending on the desired frequency.

この発明は、上記のような課題を解消するためになされたものであり、簡易な構造で小型化が可能であると共に高周波グランド電流の影響による伝送特性の改善を考慮した電子部品装置を提供することを目的とする。 The present invention has been made to solve the above-described problems, and provides an electronic component device that can be reduced in size with a simple structure and that takes into account the improvement of transmission characteristics due to the influence of a high-frequency ground current. For the purpose.

請求項1に係る発明の電子部品装置は、誘電体基板と、この誘電体基板の裏面に形成した幅広の地導体と、前記誘電体基板の表面に隙間領域を介して設置した入力線路と出力線路とで構成した伝送線路と、この伝送線路の前記隙間領域近傍の前記誘電体基板表面に載置され、前記伝送線路を通過するマイクロ波信号を電力増幅するパッケージに収納された能動素子と、この能動素子から延在し、前記伝送線路から遠ざかるように突出した前記能動素子の接地用リード端子と、この接地用リード端子と電気接続手段で電気接続される前記誘電体基板表面に形成した第1表面接地導体と、この第1表面接地導体の前記伝送線路側で前記第1表面接地導体とパターンで電気接続された第2表面接地導体と、この第2表面接地導体に設けられ、前記地導体と電気接続するスルーホール部と、このスルーホール部に前記電気接続手段が浸透することを防止する前記誘電体基板表面に設けたダムとを備えたものである。 According to a first aspect of the present invention, there is provided an electronic component device comprising: a dielectric substrate; a wide ground conductor formed on the back surface of the dielectric substrate; an input line installed on the surface of the dielectric substrate via a gap region; A transmission line composed of a line, and an active element placed on the surface of the dielectric substrate near the gap region of the transmission line and housed in a package for amplifying a microwave signal passing through the transmission line, A ground lead terminal of the active element extending from the active element and projecting away from the transmission line, and a first electrode formed on the surface of the dielectric substrate electrically connected to the ground lead terminal by electrical connection means. A first surface ground conductor, a second surface ground conductor electrically connected in a pattern with the first surface ground conductor on the transmission line side of the first surface ground conductor, and the second surface ground conductor. And a through hole portion of the body and electrically connected, in which the electrical connection means to the through hole portion and a dam provided on the dielectric substrate surface to prevent penetration.

請求項2に係る発明の電子部品装置は、前記ダムは前記第2表面接地導体を囲むように配置した請求項1に記載のものである。 An electronic component device according to a second aspect of the present invention is the electronic component device according to the first aspect, wherein the dam is disposed so as to surround the second surface ground conductor.

請求項3に係る発明の電子部品装置は、前記第1表面接地導体及び前記第2表面接地導体は前記伝送線路の両側に配置されている請求項1又は2に記載のものである。 The electronic component device according to a third aspect of the present invention is the electronic component device according to the first or second aspect, wherein the first surface ground conductor and the second surface ground conductor are disposed on both sides of the transmission line.

請求項4に係る発明の電子部品装置は、誘電体基板と、この誘電体基板の裏面に形成した幅広の地導体と、前記誘電体基板の表面に隙間領域を介して設置した入力線路と出力線路とで構成した伝送線路と、この伝送線路の前記隙間領域近傍の前記誘電体基板表面に載置され、前記伝送線路を通過するマイクロ波信号を電力増幅するパッケージに収納された能動素子と、この能動素子から延在し、前記伝送線路から遠ざかるように突出した前記能動素子の接地用リード端子と、この接地用リード端子と電気接続手段で電気接続される前記誘電体基板表面に形成した第1表面接地導体と、この第1表面接地導体の前記伝送線路側で前記第1表面接地導体と導電性ワイヤで電気接続された第2表面接地導体と、この第2表面接地導体に設けられ、前記地導体と電気接続するスルーホール部と、このスルーホール部に前記電気接続手段が浸透することを防止する前記誘電体基板表面に設けたダムとを備えたものである。 According to a fourth aspect of the present invention, there is provided an electronic component device comprising: a dielectric substrate; a wide ground conductor formed on the back surface of the dielectric substrate; an input line installed on the surface of the dielectric substrate via a gap region; A transmission line composed of a line, and an active element placed on the surface of the dielectric substrate near the gap region of the transmission line and housed in a package for amplifying a microwave signal passing through the transmission line, A ground lead terminal of the active element extending from the active element and projecting away from the transmission line, and a first electrode formed on the surface of the dielectric substrate electrically connected to the ground lead terminal by electrical connection means. A first surface ground conductor, a second surface ground conductor electrically connected to the first surface ground conductor by a conductive wire on the transmission line side of the first surface ground conductor, and the second surface ground conductor. in front And a through hole portion of the ground conductor and electrically connected, in which the electrical connection means to the through hole portion and a dam provided on the dielectric substrate surface to prevent penetration.

請求項5に係る発明の電子部品装置は、前記ダムは前記第2表面接地導体を囲むように設置した請求項4に記載のものである。 An electronic component device according to a fifth aspect of the present invention is the electronic component device according to the fourth aspect, wherein the dam is installed so as to surround the second surface ground conductor.

請求項6に係る発明の電子部品装置は、前記第1表面接地導体及び前記第2表面接地導体は前記伝送線路の両側に配置されている請求項4又は5に記載のものである。 The electronic component device according to a sixth aspect of the present invention is the electronic component device according to the fourth or fifth aspect, wherein the first surface ground conductor and the second surface ground conductor are disposed on both sides of the transmission line.

この発明に係る電子部品装置によれば、電気接続手段から流れ出る半田材や導電性接着剤がダムにより堰き止められスルーホール部に浸透することを防止するので、能動素子に近接してスルーホール部を設けても周波数特性の性能劣化を防止すると共に簡易で安価な電子部品装置を得ることが可能となる効果がある。 According to the electronic component device of the present invention, the solder material or conductive adhesive flowing out from the electrical connection means is prevented from being dammed up by the dam and penetrating into the through hole portion. Even if it is provided, it is possible to prevent performance deterioration of the frequency characteristics and to obtain a simple and inexpensive electronic component device.

この発明の実施の形態1による電子部品装置の斜視図である。1 is a perspective view of an electronic component device according to Embodiment 1 of the present invention. この発明の実施の形態1による電子部品装置の平面図である。1 is a plan view of an electronic component device according to Embodiment 1 of the present invention. この発明の実施の形態2による電子部品装置の平面図である。It is a top view of the electronic component apparatus by Embodiment 2 of this invention. 仮想接地を応用した電子部品装置の平面図である。It is a top view of the electronic component apparatus which applied virtual grounding. 供試用サンプル1の電子部品装置の平面図である。It is a top view of the electronic component apparatus of the sample 1 for a test. 供試用サンプル2の電子部品装置の平面図である。It is a top view of the electronic component apparatus of the sample 2 for a test. 供試品及び実施の形態1で示した改善品の周波数特性を示すグラフである。It is a graph which shows the frequency characteristic of a test article and the improvement goods shown in Embodiment 1.

実施の形態1.
以下、この発明の実施の形態1による電子部品装置について図を用いて説明する。図1は、この発明の実施の形態1による電子部品装置の斜視図である。図1において、1は誘電体基板、2は誘電体基板1の裏面に設けた接地導体(地導体)、3は誘電体基板1の表面に沿って設けた入力線路、4は誘電体基板1の表面に沿って入力線路3と隙間領域設けて配置した出力線路、5は誘電体基板1の表面に入力線路3又は出力線路から遠ざかるように配置した第1表面接地導体である。
Embodiment 1 FIG.
Hereinafter, an electronic component device according to Embodiment 1 of the present invention will be described with reference to the drawings. 1 is a perspective view of an electronic component device according to Embodiment 1 of the present invention. In FIG. 1, 1 is a dielectric substrate, 2 is a ground conductor (ground conductor) provided on the back surface of the dielectric substrate 1, 3 is an input line provided along the surface of the dielectric substrate 1, and 4 is a dielectric substrate 1. The output line 5 and the input line 3 are disposed along the surface of the dielectric substrate 1 so as to be spaced from the input line 3. The first surface ground conductor is disposed on the surface of the dielectric substrate 1 so as to be away from the input line 3 or the output line.

6はパッケージに収納されたWBG(WIDE BAND GAP)素子や高周波FET素子デバイスなどの能動素子であり、6aは能動素子6のゲート電極(バイアス電極とも呼ぶ)、6bは能動素子6のドレイン電極、6cは能動素子6のソース電極(接地用リード端子)である。なお、入力線路3と出力線路4を含めて伝送線路と称する。また、能動素子6は、入力線路3と出力線路4との間にパッケージ部分が配置される。 6 is an active element such as a WBG (WIDE BAND GAP) element or a high-frequency FET element device housed in a package, 6a is a gate electrode (also called a bias electrode) of the active element 6, 6b is a drain electrode of the active element 6, Reference numeral 6 c denotes a source electrode (ground lead terminal) of the active element 6. The input line 3 and the output line 4 are collectively referred to as a transmission line. The active element 6 has a package portion disposed between the input line 3 and the output line 4.

7は第1表面接地導体(第1表面接地パターン)5とパターン接続され、能動素子6のソース電極6cに接近して設けた第2表面接地導体(第2表面接地パターン)、8は第2表面接地導体7と誘電体基板1の裏面の地導体2とを電気接続するスルーホール部である。9はソルダレジスト材やシルク印刷材などの誘電体材料で構成し、第1表面接地導体5と第2表面接地導体7との接続境界近傍に設置したダム(流れ止め部材)である。図中、同一符号は、同一又は相当部分を示す。 Reference numeral 7 denotes a first surface ground conductor (first surface ground pattern) 5 which is pattern-connected to the second surface ground conductor (second surface ground pattern) provided close to the source electrode 6c of the active element 6, and 8 denotes a second surface ground conductor. This is a through-hole portion that electrically connects the surface ground conductor 7 and the ground conductor 2 on the back surface of the dielectric substrate 1. Reference numeral 9 denotes a dam (flow-preventing member) which is made of a dielectric material such as a solder resist material or a silk printing material, and is installed near the connection boundary between the first surface ground conductor 5 and the second surface ground conductor 7. In the drawings, the same reference numerals indicate the same or corresponding parts.

図2はこの発明の実施の形態1による電子部品装置の平面図である。図2において、10は能動素子6の各電極と伝送線路や第1表面接地導体5とを電気接続する電気接続手段である。入力線路3は地導体2を含むストリップライン構成であり、能動素子6のゲート電極6aと導電性接着剤やはんだ材などの電気接続手段10で電気接続される。出力線路4は地導体2を含むストリップライン構成であり、能動素子6のドレイン電極6bと導電性接着剤やはんだ材などの電気接続手段10で電気接続される。第1表面接地導体5は能動素子6のソース電極6cと導電性接着剤やはんだ材などの電気接続手段10で電気接続される。 FIG. 2 is a plan view of the electronic component device according to Embodiment 1 of the present invention. In FIG. 2, reference numeral 10 denotes an electrical connection means for electrically connecting each electrode of the active element 6 to the transmission line and the first surface ground conductor 5. The input line 3 has a stripline configuration including the ground conductor 2 and is electrically connected to the gate electrode 6a of the active element 6 by an electrical connection means 10 such as a conductive adhesive or a solder material. The output line 4 has a strip line configuration including the ground conductor 2, and is electrically connected to the drain electrode 6b of the active element 6 by an electrical connection means 10 such as a conductive adhesive or a solder material. The first surface ground conductor 5 is electrically connected to the source electrode 6c of the active element 6 by an electrical connection means 10 such as a conductive adhesive or a solder material.

次に動作について図1及び図2を用いて説明する。入力線路3に入力された高周波信号は、能動素子6のゲート電極6aを経由して能動素子6のパッケージ内部に収納された半導体チップで電力増幅が行われ、その増幅信号は能動素子6のドレイン電極6bを経由し出力線路4に伝達される。ソース接地された半導体チップのグランド電位は、誘電体基板1表面に設けた第1表面接地導体5と接続された第2表面接地導体7に設けたスルーホール部8を介して地導体2で接地される。 Next, the operation will be described with reference to FIGS. The high-frequency signal input to the input line 3 is amplified by a semiconductor chip housed in the package of the active element 6 via the gate electrode 6 a of the active element 6, and the amplified signal is the drain of the active element 6. It is transmitted to the output line 4 via the electrode 6b. The ground potential of the source-grounded semiconductor chip is grounded by the ground conductor 2 through the through-hole portion 8 provided in the second surface ground conductor 7 connected to the first surface ground conductor 5 provided on the surface of the dielectric substrate 1. Is done.

本実施の形態1では、伝送線路を介して両側に第1表面接地導体5及び第2表面接地導体7をグランドパターンとして接地の強化を図っている。また、スルーホール部8を設けた第2表面接地導体7は能動素子6のパッケージから突出したソース電極6cのパッケージ側に最も近い位置の伝送線路両側に設けている。これにより、DC的にショートであるのと同時に、高周波的にも能動素子6とスルーホール部8との距離を近接させている。 In the first embodiment, grounding is strengthened by using the first surface ground conductor 5 and the second surface ground conductor 7 as ground patterns on both sides of the transmission line. In addition, the second surface ground conductor 7 provided with the through-hole portion 8 is provided on both sides of the transmission line at a position closest to the package side of the source electrode 6 c protruding from the package of the active element 6. As a result, the distance between the active element 6 and the through-hole portion 8 is made close to the short circuit in terms of DC as well as in terms of high frequency.

次に電気接続手段について説明する。電気接続手段10が半田材の場合には、半田材の熱溶融で能動素子6に近接して設けた第2表面接地パターン7と接続したスルーホール部8に、半田材が流れ込み、スルーホール部8の金属めっき膜で形成した内壁面に亀裂が生じ剥離の原因となる。特にスルーホール部8の中空部にグランド強化のための導電性樹脂を塗布したものにあってはスルーホール部8の中空部領域の熱伝導が悪化し、樹脂の黒化(焼け)現象が発生し高周波性能の劣化のほかに見栄えが低下する。 Next, the electrical connection means will be described. When the electrical connection means 10 is a solder material, the solder material flows into the through-hole portion 8 connected to the second surface ground pattern 7 provided in the vicinity of the active element 6 by thermal melting of the solder material, and the through-hole portion Cracks occur on the inner wall surface formed of the metal plating film 8 and cause peeling. In particular, in the case where a conductive resin for reinforcing the ground is applied to the hollow portion of the through-hole portion 8, the heat conduction in the hollow portion region of the through-hole portion 8 is deteriorated, and the resin is blackened (burned). In addition to the deterioration of high frequency performance, the appearance is reduced.

したがって、能動素子6に近接して設けた第2表面接地パターン7と、半田材が流動する第1表面接地導体5との境界にダム(堰)9を設けることにより、半田材が第2表面接地層7を通過してスルーホール部8に浸透することを防止する。   Therefore, by providing a dam (weir) 9 at the boundary between the second surface ground pattern 7 provided in the vicinity of the active element 6 and the first surface ground conductor 5 through which the solder material flows, the solder material becomes the second surface. The penetration into the through-hole portion 8 through the surface ground layer 7 is prevented.

次に電気接続手段10が導電性の接着剤の場合について説明する。能動素子6の各電極の下面と伝送線路や第1表面接地導体5とを電気接続する場合には、低温硬化型の導電性樹脂を用いることが好ましい。この場合には、熱的問題は解決されるが能動素子6を押さえつけて第1表面接地パターン5と接続するので導電性樹脂のはみだしにより容易にスルーホール部8に浸透する。したがって、能動素子6に近接して設けた第2表面接地パターン7と、導電性樹脂が流動する第1表面接地導体5との境界にダム(堰)9を設けることにより、導電性樹脂が第2表面接地パターン7を通過してスルーホール部8に浸透することを防止する。   Next, the case where the electrical connection means 10 is a conductive adhesive will be described. When the lower surface of each electrode of the active element 6 is electrically connected to the transmission line and the first surface ground conductor 5, it is preferable to use a low-temperature curable conductive resin. In this case, although the thermal problem is solved, the active element 6 is pressed down and connected to the first surface ground pattern 5, so that it easily penetrates into the through-hole portion 8 due to the protruding conductive resin. Therefore, by providing a dam (weir) 9 at the boundary between the second surface ground pattern 7 provided in the vicinity of the active element 6 and the first surface ground conductor 5 through which the conductive resin flows, the conductive resin can be 2) It is prevented from passing through the surface contact pattern 7 and penetrating into the through hole 8.

以上から実施の形態1によれば、能動素子6のソース電極6cと表面接地導体5とを電気接続する電気接続手段10から流れ出る半田材や導電性接着剤がダムにより堰き止められスルーホール部8に浸透することを防止するので、能動素子6に近接してスルーホール部8を設けてもグランド電位の性能劣化や周波数特性の悪化を防止することが可能となる。 As described above, according to the first embodiment, the solder material and the conductive adhesive flowing out from the electrical connection means 10 that electrically connects the source electrode 6c of the active element 6 and the surface ground conductor 5 are blocked by the dam, and the through-hole portion 8 Therefore, even if the through-hole portion 8 is provided in the vicinity of the active element 6, it is possible to prevent the performance deterioration of the ground potential and the frequency characteristic.

実施の形態2.
この発明の実施の形態2による電子部品装置について図を用いて説明する。図3は、この発明の実施の形態2による電子部品装置の平面図である。図3において、90はソルダレジスト材やシルク印刷材などの誘電体材料で構成し、第2表面接地導体7を囲むように配置したダム(流れ止め部材)である。図中、図2と同一符号は、同一又は相当部分を示す。
実施の形態1では、第1表面接地導体5と第2表面接地導体7との境界にダム9を設けたが第2表面接地導体7の全域にダム90を設けても実施の形態1と同様の作用効果を奏する。
Embodiment 2. FIG.
An electronic component device according to Embodiment 2 of the present invention will be described with reference to the drawings. 3 is a plan view of an electronic component device according to Embodiment 2 of the present invention. In FIG. 3, reference numeral 90 denotes a dam (flow prevention member) that is made of a dielectric material such as a solder resist material or a silk printing material, and is disposed so as to surround the second surface ground conductor 7. In the figure, the same reference numerals as those in FIG. 2 denote the same or corresponding parts.
In the first embodiment, the dam 9 is provided at the boundary between the first surface ground conductor 5 and the second surface ground conductor 7. However, even if the dam 90 is provided in the entire area of the second surface ground conductor 7, the same as in the first embodiment. Has the effect of.

実施の形態3.
実施の形態1及び2では、ダムはソルダレジスト材やシルク印刷材などの誘電体材料で
構成し、第1表面接地導体5と第2表面接地パターン7とはパターンで接続したが、第1表面接地導体5と第2表面接地導体7との間に隙間を設け、両者の電気接続は、多数の細長の金属ワイヤを用いてこれをダムとしても良い。すなわち、ワイヤボンド方式で第1表面接地導体5と第2表面接地導体7とを30μmφ程度の金ワイヤなどを多数並列に設けて電気接続する。並列して配置する細長のワイヤ間の間隙やワイヤの高さ方向の起伏により、この場合にも表面接地導体7のスルーホール部8に電気接続手段10は浸透しない。
Embodiment 3 FIG.
In the first and second embodiments, the dam is made of a dielectric material such as a solder resist material or a silk printing material, and the first surface ground conductor 5 and the second surface ground pattern 7 are connected in a pattern. A gap may be provided between the ground conductor 5 and the second surface ground conductor 7, and the electrical connection between them may be a dam using a number of elongated metal wires. That is, the first surface ground conductor 5 and the second surface ground conductor 7 are electrically connected to each other by providing a large number of gold wires of about 30 μmφ in parallel by wire bonding. Also in this case, the electrical connection means 10 does not penetrate into the through-hole portion 8 of the surface ground conductor 7 due to the gap between the elongated wires arranged in parallel and the undulation in the height direction of the wire.

次に接地方法の違いによる周波数特性について説明する。図4は、仮想接地を応用した電子部品装置の平面図である。図4において、91はソルダレジスト材やシルク印刷材などの誘電体材料で構成し、第1表面接地導体5と第2表面接地導体7との接続境界近傍に設置したダム(流れ止め部材)である。図中、図2と同一符号は、同一又は相当部分を示す。この一例では、能動素子6のソース(S)から使用周波数波長(λg)の半波長又はその倍数離間した位置で接地することで仮想アースとなる。しかし、伝送線路が細長い場合には伝送線路を収納する筐体(図示せず)の伝送線路と直交する方向の幅が大きくなり、多数のフェーズドアレイアンテナ用に用いる電子部品装置には適用が困難である。 Next, frequency characteristics depending on the grounding method will be described. FIG. 4 is a plan view of an electronic component device to which virtual grounding is applied. In FIG. 4, reference numeral 91 denotes a dam (flow prevention member) made of a dielectric material such as a solder resist material or a silk printing material, and installed near the connection boundary between the first surface ground conductor 5 and the second surface ground conductor 7. is there. In the figure, the same reference numerals as those in FIG. 2 denote the same or corresponding parts. In this example, a virtual ground is formed by grounding at a position separated from the source (S) of the active element 6 by a half wavelength of the use frequency wavelength (λg) or a multiple thereof. However, when the transmission line is elongated, the width of the casing (not shown) that houses the transmission line increases in the direction orthogonal to the transmission line, and is difficult to apply to an electronic component device used for many phased array antennas. It is.

図5は、供試用サンプル1の電子部品装置の平面図である。図5において、92はソルダレジスト材やシルク印刷材などの誘電体材料で構成し、第1表面接地導体5と第2表面接地導体7との接続境界近傍に設置したダム(流れ止め部材)である。図中、図2と同一符号は、同一又は相当部分を示す。この供試用サンプル1では、能動素子6のソース(S)から使用周波数波長(λg)の半波長離間した位置とは異なる位置で接地している。
すなわち、第1表面接地導体7の先端でグランド接地するので能動素子6からスルーホール部8までの距離が比較的長いので仮想アースは曖昧になり大きく周波数特性は悪化する。
FIG. 5 is a plan view of the electronic component device of the test sample 1. In FIG. 5, reference numeral 92 denotes a dam (flow prevention member) made of a dielectric material such as a solder resist material or a silk printing material, and installed near the connection boundary between the first surface ground conductor 5 and the second surface ground conductor 7. is there. In the figure, the same reference numerals as those in FIG. 2 denote the same or corresponding parts. In this sample 1 for test, it is grounded at a position different from the position separated from the source (S) of the active element 6 by a half wavelength of the use frequency wavelength (λg).
That is, since the ground is grounded at the tip of the first surface ground conductor 7, the distance from the active element 6 to the through-hole portion 8 is relatively long, so that the virtual ground becomes ambiguous and the frequency characteristics are deteriorated.

図6は、供試用サンプル2の電子部品装置の平面図である。図6に示すように能動素子6の近傍にスルーホール部8を設けることで実施の形態1同様に良好な周波数特性が得られるものの能動素子6のグランド端子(S)の半田付け時に半田がスルーホール部8を通して裏面の地導体2に流れ出し、半田付け不足を生じる場合があり品質上の問題がある。そのため、半田材などの流れを防止するために樹脂によるスルーホール部8の穴埋めを行い、さらに電解めっきや無電解めっきを行うこともあり、工数が増加し高価なものになる。また、スルーホール部8をBVH(ブラインドヴィアホール)等に代替する方法もあるが、さらに高価な基板となる。 FIG. 6 is a plan view of the electronic component device of the test sample 2. As shown in FIG. 6, by providing the through-hole portion 8 in the vicinity of the active element 6, good frequency characteristics can be obtained as in the first embodiment, but the solder passes through when the ground terminal (S) of the active element 6 is soldered. Flowing out to the ground conductor 2 on the back surface through the hole portion 8 may cause insufficient soldering, resulting in a quality problem. For this reason, in order to prevent the flow of the solder material or the like, the through-hole portion 8 is filled with resin, and further, electrolytic plating or electroless plating may be performed, which increases the number of steps and becomes expensive. Further, there is a method of replacing the through hole portion 8 with a BVH (blind via hole) or the like, but the substrate becomes more expensive.

図7は、上記した供試用サンプル1(供試品1)、供試用サンプル2(供試品2)、及び実施の形態1で示した改善品の周波数特性(位相変化特性)を示すグラフである。図7では、実施の形態1で説明した電子部品装置および供試品2では、X帯域の周波数特性は良好であるが、供試品1においては、X帯域における周波数特性は悪化していることが解かる。 FIG. 7 is a graph showing frequency characteristics (phase change characteristics) of the above-described sample 1 (sample 1), sample 2 (sample 2), and the improved product shown in the first embodiment. is there. In FIG. 7, in the electronic component device and the sample 2 described in the first embodiment, the frequency characteristics in the X band are good, but in the sample 1, the frequency characteristics in the X band are deteriorated. Is solved.

1・・誘電体基板 2・・接地導体(地導体) 3・・入力線路 4・・出力線路
5・・第1表面接地導体(第1表面接地パターン)
6・・能動素子 6a・・ゲート電極 6b・・ドレイン電極
6c・・ソース電極(接地用リード端子)
7・・第2表面接地導体(第2表面接地パターン)
8・・スルーホール部 9・・ダム(流れ止め部材)
10・・電気接続手段 90・・ダム(流れ止め部材) 91・・ダム(流れ止め部材)92・・ダム(流れ止め部材)
1. ・ Dielectric substrate 2. ・ Grounding conductor (ground conductor) 3. ・ Input line 4. ・ Output line 5. ・ First surface ground conductor (first surface ground pattern)
6. Active element 6a Gate electrode 6b Drain electrode 6c Source electrode (ground lead terminal)
7. Second surface ground conductor (second surface ground pattern)
8 ・ ・ Through hole part 9 ・ ・ Dam (flow prevention member)
10. Electric connection means 90. Dam (flow prevention member) 91 Dam (flow prevention member) 92 Dam (flow prevention member)

Claims (6)

誘電体基板と、この誘電体基板の裏面に形成した幅広の地導体と、前記誘電体基板の表面に隙間領域を介して設置した入力線路と出力線路とで構成した伝送線路と、この伝送線路の前記隙間領域近傍の前記誘電体基板表面に載置され、前記伝送線路を通過するマイクロ波信号を電力増幅するパッケージに収納された能動素子と、この能動素子から延在し、前記伝送線路から遠ざかるように突出した前記能動素子の接地用リード端子と、この接地用リード端子と電気接続手段で電気接続される前記誘電体基板表面に形成した第1表面接地導体と、この第1表面接地導体の前記伝送線路側で前記第1表面接地導体とパターンで電気接続された第2表面接地導体と、この第2表面接地導体に設けられ、前記地導体と電気接続するスルーホール部と、このスルーホール部に前記電気接続手段が浸透することを防止する前記誘電体基板表面に設けたダムとを備えた電子部品装置。 A transmission line composed of a dielectric substrate, a wide ground conductor formed on the back surface of the dielectric substrate, an input line and an output line installed on the surface of the dielectric substrate via a gap region, and the transmission line An active element mounted on a surface of the dielectric substrate in the vicinity of the gap region and housed in a package for amplifying a microwave signal passing through the transmission line, and extending from the active element, and from the transmission line A ground lead terminal of the active element projecting away from the ground, a first surface ground conductor formed on the surface of the dielectric substrate electrically connected to the ground lead terminal by electrical connection means, and the first surface ground conductor A second surface ground conductor electrically connected in pattern with the first surface ground conductor on the transmission line side, a through hole portion provided on the second surface ground conductor and electrically connected to the ground conductor, Electronic component device and a dam provided on the dielectric substrate surface for preventing the electrical connecting means in the through hole portion of the permeates. 前記ダムは前記第2表面接地導体を囲むように配置した請求項1に記載の電子部品装置。 The electronic component device according to claim 1, wherein the dam is disposed so as to surround the second surface ground conductor. 前記第1表面接地導体及び前記第2表面接地導体は前記伝送線路の両側に配置されている請求項1又は2に記載の電子部品装置。 The electronic component device according to claim 1, wherein the first surface ground conductor and the second surface ground conductor are disposed on both sides of the transmission line. 誘電体基板と、この誘電体基板の裏面に形成した幅広の地導体と、前記誘電体基板の表面に隙間領域を介して設置した入力線路と出力線路とで構成した伝送線路と、この伝送線路の前記隙間領域近傍の前記誘電体基板表面に載置され、前記伝送線路を通過するマイクロ波信号を電力増幅するパッケージに収納された能動素子と、この能動素子から延在し、前記伝送線路から遠ざかるように突出した前記能動素子の接地用リード端子と、この接地用リード端子と電気接続手段で電気接続される前記誘電体基板表面に形成した第1表面接地導体と、この第1表面接地導体の前記伝送線路側で前記第1表面接地導体と導電性ワイヤで電気接続された第2表面接地導体と、この第2表面接地導体に設けられ、前記地導体と電気接続するスルーホール部と、このスルーホール部に前記電気接続手段が浸透することを防止する前記誘電体基板表面に設けたダムとを備えた電子部品装置。 A transmission line composed of a dielectric substrate, a wide ground conductor formed on the back surface of the dielectric substrate, an input line and an output line installed on the surface of the dielectric substrate via a gap region, and the transmission line An active element mounted on a surface of the dielectric substrate in the vicinity of the gap region and housed in a package for amplifying a microwave signal passing through the transmission line, and extending from the active element, and from the transmission line A ground lead terminal of the active element projecting away from the ground, a first surface ground conductor formed on the surface of the dielectric substrate electrically connected to the ground lead terminal by electrical connection means, and the first surface ground conductor A second surface ground conductor electrically connected to the first surface ground conductor by a conductive wire on the transmission line side, and a through hole portion provided on the second surface ground conductor and electrically connected to the ground conductor , An electronic component device that includes a dam provided on the dielectric substrate surface to prevent the possible electrical connection means penetrates into the through hole portion. 前記ダムは前記第2表面接地導体を囲むように設置した請求項4に記載の電子部品装置。 The electronic component device according to claim 4, wherein the dam is installed so as to surround the second surface ground conductor. 前記第1表面接地導体及び前記第2表面接地導体は前記伝送線路の両側に配置されている請求項4又は5に記載の電子部品装置。 The electronic component device according to claim 4, wherein the first surface ground conductor and the second surface ground conductor are disposed on both sides of the transmission line.
JP2009024799A 2009-02-05 2009-02-05 Electronic component device Pending JP2010182864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009024799A JP2010182864A (en) 2009-02-05 2009-02-05 Electronic component device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009024799A JP2010182864A (en) 2009-02-05 2009-02-05 Electronic component device

Publications (1)

Publication Number Publication Date
JP2010182864A true JP2010182864A (en) 2010-08-19

Family

ID=42764205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009024799A Pending JP2010182864A (en) 2009-02-05 2009-02-05 Electronic component device

Country Status (1)

Country Link
JP (1) JP2010182864A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012052874A (en) * 2010-08-31 2012-03-15 Mitsumi Electric Co Ltd Pressure sensor device, electronic equipment provided with the device, and mounting method of the device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012052874A (en) * 2010-08-31 2012-03-15 Mitsumi Electric Co Ltd Pressure sensor device, electronic equipment provided with the device, and mounting method of the device
US8707794B2 (en) 2010-08-31 2014-04-29 Mitsumi Electric Co., Ltd. Pressure sensor device, electronic apparatus, and method of mounting pressure sensor device

Similar Documents

Publication Publication Date Title
JP5765174B2 (en) Electronic equipment
WO2011118544A1 (en) Wireless module and method for manufacturing same
CN103650234A (en) Wireless module
TWI725426B (en) Semiconductor device
JPWO2018021209A1 (en) Semiconductor device mounting substrate and semiconductor device
US20080017406A1 (en) Thermal conduit
US20120112344A1 (en) Substrate for semiconductor package and method of manufacturing thereof
JP4903738B2 (en) Electronic component storage package and electronic device
JP3420913B2 (en) Circuit board for mounting semiconductor chip, package for storing semiconductor chip, and semiconductor device
JP2010182864A (en) Electronic component device
CN105977241A (en) Packaging structure for photoelectron integrated chip
JP2019134092A (en) Flexible substrate and optical device
JP2003114265A (en) High frequency circuit and shielded loop field detector using the same
JP2008263360A (en) High-frequency substrate device
JP2000183488A (en) Hybrid module
JP2005039118A (en) Semiconductor device
JP2001185915A (en) Microstrip line structure
JP3928152B2 (en) Printed wiring board
JP3071761B2 (en) Mounting structure of high frequency semiconductor device
US11849538B2 (en) Composite wiring board, package, and electronic device
JP2004153179A (en) Semiconductor device and electronic device
JP2011187550A (en) High-frequency package
CN102714927B (en) A microwave unit and method therefore
JP3112253B2 (en) High frequency semiconductor device
KR101351188B1 (en) Ball grid array package printed-circuit board and manufacturing method thereof