JP2010007161A5 - - Google Patents
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- JP2010007161A5 JP2010007161A5 JP2008170806A JP2008170806A JP2010007161A5 JP 2010007161 A5 JP2010007161 A5 JP 2010007161A5 JP 2008170806 A JP2008170806 A JP 2008170806A JP 2008170806 A JP2008170806 A JP 2008170806A JP 2010007161 A5 JP2010007161 A5 JP 2010007161A5
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- JP
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- Prior art keywords
- electrode
- discharge
- discharge circuit
- discharge current
- electrodes
- Prior art date
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Description
上記課題を解決するために、本発明の電源装置は、プラズマに接触する一対の電極に対して所定の周波数で交互に極性を反転させて所定の電位を印加し、一の電極から他の電極に交互に放電電流を流す第1の放電回路と、前記一対の電極のうち、前記第1の放電回路により放電電流が流れ込む他の電極とグランドとの間で所定の電位を印加し、グランドから前記他の電極に放電電流を流す第2の放電回路と、を備えることを特徴とする。
Claims (1)
- プラズマに接触する一対の電極に対して所定の周波数で交互に極性を反転させて所定の
電位を印加し、一の電極から他の電極に交互に放電電流を流す第1の放電回路と、
前記一対の電極のうち、前記第1の放電回路により放電電流が流れ込む他の電極とグラ
ンドとの間で所定の電位を印加し、グランドから前記他の電極に放電電流を流す第2の放電回路と、を備えることを特徴とする電源装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008170806A JP5429772B2 (ja) | 2008-06-30 | 2008-06-30 | 電源装置 |
PCT/JP2009/060988 WO2010001723A1 (ja) | 2008-06-30 | 2009-06-17 | 電源装置 |
US13/001,454 US9210788B2 (en) | 2008-06-30 | 2009-06-17 | Power supply apparatus |
KR1020117002276A KR101298167B1 (ko) | 2008-06-30 | 2009-06-17 | 전원 장치 |
CN2009801254002A CN102084024B (zh) | 2008-06-30 | 2009-06-17 | 电源装置 |
TW098120658A TWI500799B (zh) | 2008-06-30 | 2009-06-19 | Power supply |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008170806A JP5429772B2 (ja) | 2008-06-30 | 2008-06-30 | 電源装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010007161A JP2010007161A (ja) | 2010-01-14 |
JP2010007161A5 true JP2010007161A5 (ja) | 2011-06-30 |
JP5429772B2 JP5429772B2 (ja) | 2014-02-26 |
Family
ID=41465824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008170806A Active JP5429772B2 (ja) | 2008-06-30 | 2008-06-30 | 電源装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9210788B2 (ja) |
JP (1) | JP5429772B2 (ja) |
KR (1) | KR101298167B1 (ja) |
CN (1) | CN102084024B (ja) |
TW (1) | TWI500799B (ja) |
WO (1) | WO2010001723A1 (ja) |
Families Citing this family (27)
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TWI576890B (zh) * | 2012-02-20 | 2017-04-01 | Tokyo Electron Ltd | Power supply system, plasma processing device and plasma processing method |
DE102012021346A1 (de) * | 2012-11-01 | 2014-08-28 | Oerlikon Trading Ag, Trübbach | Leistungsverteiler zur definierten sequenziellen Leistungsverteilung |
KR102222902B1 (ko) * | 2014-05-12 | 2021-03-05 | 삼성전자주식회사 | 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법 |
DE102016012460A1 (de) * | 2016-10-19 | 2018-04-19 | Grenzebach Maschinenbau Gmbh | Vorrichtung und Verfahren zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter - Anlagen |
US10510575B2 (en) * | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
CN109811324B (zh) * | 2019-03-14 | 2021-02-09 | 哈尔滨工业大学 | 基于异质双靶高功率脉冲磁控溅射制备掺杂类薄膜的装置及方法 |
TWI692921B (zh) * | 2019-06-26 | 2020-05-01 | 台達電子工業股份有限公司 | 電源供應電路與操作方法 |
US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
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US4597847A (en) * | 1984-10-09 | 1986-07-01 | Iodep, Inc. | Non-magnetic sputtering target |
JPH02243762A (ja) * | 1989-03-17 | 1990-09-27 | Hitachi Ltd | スパッタ装置 |
DE4042289A1 (de) * | 1990-12-31 | 1992-07-02 | Leybold Ag | Verfahren und vorrichtung zum reaktiven beschichten eines substrats |
DE9109503U1 (de) | 1991-07-31 | 1991-10-17 | Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier | Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik |
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JPH10152772A (ja) * | 1996-11-22 | 1998-06-09 | Matsushita Electric Ind Co Ltd | スパッタリング方法及び装置 |
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JPH11146659A (ja) * | 1997-11-05 | 1999-05-28 | Haiden Kenkyusho:Kk | 正負パルス式スイッチング電源装置 |
DE10018879B4 (de) * | 2000-04-17 | 2013-02-28 | Melec Gmbh | Stromversorgungsgerät zur bipolaren Stromversorgung |
KR20040002796A (ko) * | 2002-06-28 | 2004-01-07 | 후지 샤신 필름 가부시기가이샤 | 편광판 점착방법 및 그 장치 |
JP2005133110A (ja) | 2003-10-28 | 2005-05-26 | Konica Minolta Opto Inc | スパッタリング装置 |
JP4780972B2 (ja) | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
JP4650315B2 (ja) * | 2005-03-25 | 2011-03-16 | 株式会社ブリヂストン | In−Ga−Zn−O膜の成膜方法 |
JP4775948B2 (ja) * | 2005-11-17 | 2011-09-21 | 日東電工株式会社 | 光学表示装置の製造システム及びその製造方法 |
JP5016819B2 (ja) * | 2006-01-11 | 2012-09-05 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
JP4320019B2 (ja) * | 2006-01-11 | 2009-08-26 | 株式会社アルバック | スパッタリング装置 |
JP2008138263A (ja) * | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | ロール・ツー・ロール型のマグネトロン・スパッタ装置、積層体、光学機能性フィルタ、及び光学表示装置 |
US9355824B2 (en) * | 2006-12-12 | 2016-05-31 | Evatec Ag | Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS) |
-
2008
- 2008-06-30 JP JP2008170806A patent/JP5429772B2/ja active Active
-
2009
- 2009-06-17 CN CN2009801254002A patent/CN102084024B/zh active Active
- 2009-06-17 US US13/001,454 patent/US9210788B2/en active Active
- 2009-06-17 WO PCT/JP2009/060988 patent/WO2010001723A1/ja active Application Filing
- 2009-06-17 KR KR1020117002276A patent/KR101298167B1/ko active IP Right Grant
- 2009-06-19 TW TW098120658A patent/TWI500799B/zh active
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