JP2009246090A - Support body for manufacturing film device, and manufacturing method of film device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a support body for manufacturing a film device capable of manufacturing micro devices with precision on a film substrate and manufacturing a film device of excellent performance. <P>SOLUTION: The manufacturing method of a film device uses a support body for manufacturing a film device and comprises a step of pasting a film substrate to the support body for manufacturing a film device and a step of manufacturing a device on the film substrate. The support body for manufacturing the film device is used in such a manufacturing method and the film device is manufactured by a plurality of devices formed on the film substrate. The support body for manufacturing the film device also comprises the substrate and an adhesive layer formed of an adhesive resin formed in a pattern on the substrate and capable of sticking the film substrate, the allowing peeling thereof. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a support for manufacturing a film device used for manufacturing a film device in which a plurality of devices are formed on a film substrate.

  In a semiconductor device typified by a liquid crystal display device, an organic EL display device, and an electrophoretic display device, a TFT substrate in which a plurality of TFTs are regularly arranged on the substrate is used. In such a TFT base material, heat treatment at a high temperature is accompanied when forming the TFT on the base material, and therefore, as the base material, quartz glass or heat resistant glass having heat resistance has been used. However, since such quartz glass and heat-resistant glass are heavy and have problems of being easily broken, it has been desired to change them to a film base material.

When a film substrate is used as the substrate, the film substrate is not rigid like conventional quartz glass or heat-resistant glass, but has flexibility, so that the problem is that deformation easily occurs. It was. That is, when a device such as an organic TFT is produced on the film substrate, it is usually necessary to carry out a plurality of steps to form such a device, so that a device with excellent performance is formed. Therefore, it is indispensable to accurately adjust the alignment in each process. However, since the film base material has the characteristic of being easily deformed as described above, it is difficult to accurately adjust the alignment in each step, and the device cannot be accurately manufactured. It was.

Under such circumstances, in order to solve the above-described problems, the film base is fixed on the support by a fixing layer made of an adhesive, and an organic TFT is formed on the fixed film base. A method is disclosed (for example, Patent Document 1). As illustrated in FIG. 8, this method uses a support 100 having a configuration in which a fixing layer 102 made of an adhesive is formed on a base material 101 (FIG. 8A). A film substrate 110 is adhered on the fixed layer 102 (FIG. 8B), and a device 120 such as an organic TFT is produced on the film substrate 110 (FIG. 8C). By peeling the produced film base material 110 (FIG. 8D), a film device 130 in which a device 120 such as an organic TFT is formed on the film base material 110 is manufactured (FIG. 8). (E)).
According to such a manufacturing method, it is possible to prevent the film base material from being deformed due to the flexibility of the film base material, and therefore, in each step of manufacturing a device, the alignment is greatly shifted. Can be eliminated.

  However, when a device is manufactured using a film base material, it is a matter of course that there is a large misalignment due to the flexibility of the film base material. When manufacturing such extremely fine devices, thermal shrinkage of the film base material on the order of microns becomes a big problem. In this respect, the method as described in FIG. 8 can eliminate the alignment shift due to the flexibility of the film base material, but the film base material is dimensioned with thermal deformation of the fixed layer. There was a problem that it was not possible to prevent the change from occurring. For this reason, the above-described method has a problem that it is still difficult to manufacture a film device in which a minute device is formed on a film substrate.

JP 2006-278822 A

  The present invention has been made in view of such problems, and supports for producing a film device capable of producing a fine device on a film substrate with high accuracy and producing a film device having excellent performance. The main purpose is to provide a body.

  In order to solve the above problems, the present invention uses a support for film device manufacturing, a step of bonding a film base on the support for film device manufacture, and a step of manufacturing a device on the film base. A film device manufacturing support for use in a film device manufacturing method for manufacturing a film device in which a plurality of devices are produced on the film base material, the base material and the base material on the base material There is provided a support for film device manufacture, comprising a pressure-sensitive adhesive layer that is formed in a pattern and is made of an adhesive resin and capable of adhering the film substrate so as to be peelable.

According to the support for manufacturing a film device of the present invention, the adhesive layer is formed in a pattern, so that when the film device is manufactured using the support for manufacturing a film device of the present invention, the adhesive layer Even if a dimensional change occurs due to thermal expansion or contraction, the deformation affects the film base material bonded on the adhesive layer, and the dimensional change also occurs in the film base material itself. Can be prevented. For this reason, according to the present invention, it is possible to effectively prevent a minute dimensional change from occurring in the film base material, and when producing a film device using the support for film device production of the present invention, The alignment in each process can be controlled with high accuracy.
From such a thing, according to the support body for film device manufacture of this invention, a microdevice can be produced with high precision on a film base material, and a film device excellent in performance can be produced.

  In the film device manufacturing support of the present invention, the adhesive layer is patterned so that there are a region where the adhesive layer is formed on the substrate and a region where the adhesive layer is not formed. Preferably there is. The adhesive layer used in the present invention may be patterned in such a manner that grooves are formed on the surface of the adhesive layer, but the adhesive layer is formed on the substrate. By patterning so that there is a region and a region where the adhesive layer is not formed, the dimensional change that occurs in each patterned adhesive layer can be further reduced, and as a result, it is bonded onto the adhesive layer. It is because it can further prevent that a dimensional change arises in a film base material.

  Moreover, this invention uses the support for film device manufacture which concerns on the said invention, The film base-material adhesion | attachment process of sticking so that a film base material can be peeled on the said adhesion layer of the said support for film device manufacture, A device production step of producing a device on the surface of the film substrate, and a film substrate peeling step of peeling the film substrate on which the device is produced from the adhesive layer of the support for film device production. A method for manufacturing a film device is provided.

  According to the method for producing a film device of the present invention, the support for film device production according to the present invention is used as the support to which the film substrate is bonded in the film substrate adhesion step. In the device production process, a minute and high-performance device can be produced on the film substrate. For this reason, according to this invention, a microdevice is produced with high precision on a film base material, and the film device excellent in performance can be manufactured.

  The support for film device production of the present invention makes it possible to produce a minute device on a film substrate with high accuracy, and produces an effect that a film device having excellent performance can be produced.

  Hereinafter, the support for film device manufacture of this invention and the manufacturing method of a film device are demonstrated in order.

A. First, the support for film device manufacture of this invention is demonstrated. As described above, the support for manufacturing a film device of the present invention uses a support for manufacturing a film device, a step of bonding a film substrate on the support for manufacturing a film device, and a device on the film substrate. And a process for producing a film device in which a plurality of devices are produced on the film substrate, wherein the pattern is formed on the substrate and the substrate. And an adhesive layer that is made of an adhesive resin and can be adhered to the film substrate so that the film substrate can be peeled off.

  Such a support for manufacturing a film device of the present invention will be described with reference to the drawings. First, the manufacturing method of the film device which is a use of the support body for film device manufacture of this invention is demonstrated. FIG. 1 is a schematic view showing an example of a method for producing a film device which is an application of the support for producing a film device of the present invention. As illustrated in FIG. 1, the support for manufacturing a film device of the present invention uses the support 1 for manufacturing a film device (FIG. 1A), and adheres a film base 2 to the support 1. A film substrate adhesion step (FIG. 1 (b)), a device production step for producing a device 3 such as an organic TFT on the film substrate 2 adhered on the support 1 for film device production (FIG. 1 ( c)), a film base material peeling step for peeling the film base material 1 on which the device 3 is manufactured (FIG. 1 (d)), and a plurality of devices 3 such as organic TFTs on the film base material 2 The manufactured film device 10 is manufactured (FIG. 1 (e)), and is used in a film device manufacturing method. That is, the support for film device manufacture of this invention is used as a support for film device manufacture used for the said film base material adhesion process (FIG.1 (b)). In addition, in FIG. 1, 1a represents a base material and 1b represents an adhesion layer.

Next, the film device manufacturing support of the present invention will be specifically described with reference to the drawings. FIG. 2 is a schematic view showing an example of a support for producing a film device of the present invention. Here, FIG. 2B is a cross-sectional view taken along line XX ′ in FIG.
As illustrated in FIG. 2, the film device manufacturing support 1 of the present invention is formed on a base 1 a and the base 1 a, is made of an adhesive resin, and is attached so that the film base can be peeled off. It has the adhesion layer 1b which can be match | combined.
In such an example, the support 1 for film device production of the present invention is characterized in that the adhesive layer 1b is not formed on the entire surface of the substrate 1b but is formed in a pattern. To do.

According to the support for manufacturing a film device of the present invention, the adhesive layer is formed in a pattern, so that when the film device is manufactured using the support for manufacturing a film device of the present invention, the adhesive layer Even when a dimensional change occurs due to thermal expansion or shrinkage, the dimensional change affects the film base material laminated on the adhesive layer, and the dimensional change occurs in the film base material itself. Can be prevented. For this reason, according to the present invention, it is possible to effectively prevent a minute dimensional change from occurring in the film base material, and when producing a film device using the support for film device production of the present invention, The alignment in each process can be controlled with high accuracy.
From such a thing, according to the support body for film device manufacture of this invention, a microdevice can be produced with high precision on a film base material, and a film device excellent in performance can be produced.

Here, according to the support for manufacturing a film device of the present invention, even when a dimensional change due to thermal expansion or thermal contraction occurs in the adhesive layer when producing the film device, the dimensional change is the above. The reason why the film base material bonded to the pressure-sensitive adhesive layer can be prevented from causing a dimensional change in the film base material itself will be specifically described.
FIG. 3 is a schematic view showing an example of a support used in the production of a conventional film device. Here, FIG. 3B is a cross-sectional view taken along line XX ′ in FIG.
As illustrated in FIG. 3, the conventional support 110 has a base material 101 and a fixing layer 102 formed on the base material 101 and made of an adhesive, and is fixed to the entire surface of the base material 101. Layer 102 was formed. For this reason, when heat shrinkage and thermal expansion occur in the fixed layer 102, the accompanying dimensional change amount of the fixed layer 102 becomes large, which causes a misalignment when a device is manufactured.
In this regard, the film device manufacturing support of the present invention is assumed that, as illustrated in FIG. 2, the adhesive layer is formed in a pattern, and thus thermal contraction and thermal expansion occur in each adhesive layer. However, since the amount of dimensional change depends on the area of the pressure-sensitive adhesive layer, in the pressure-sensitive adhesive layer finely patterned as in the present invention, the amount of dimensional change generated in each pressure-sensitive adhesive layer can be reduced.
Therefore, according to the support for manufacturing a film device of the present invention, even when the adhesive layer undergoes a dimensional change due to thermal expansion or thermal contraction when the film device is produced, the dimensional change is It affects the film base material bonded to the adhesive layer, and can prevent the dimensional change from occurring in the film base material itself.

The support for film device manufacture of this invention has a base material and an adhesion layer at least.
Hereafter, each structure used for this invention is demonstrated in order.

1. First, the adhesive layer used in the present invention will be described. The pressure-sensitive adhesive layer used in the present invention is made of a pressure-sensitive resin and is formed in a pattern on a substrate described later. And when the adhesive layer of this invention is formed in the pattern form on the base material mentioned later, when manufacturing a film device using the support body for film device manufacture of this invention, it is alignment with high precision. The film device has a function capable of producing a film device having excellent characteristics.

  The pressure-sensitive adhesive layer in the present invention is characterized in that it is formed in a pattern, but as a pattern in which the pressure-sensitive adhesive layer in the present invention is formed, using the support for film device production of the present invention, When producing a film device on a film base material, it will not specifically limit if the grade of the dimensional change of a film base material can be in a desired range. Especially, it is preferable that the adhesion layer in this invention is patterned so that the longest distance in the plane direction of each adhesion layer may become 1/2 or less of the distance of the major axis direction of the base material mentioned later. Thereby, when producing a film device using the support for film device manufacture of this invention, it can prevent more effectively that a dimensional change will arise in a film base material.

In addition, the pressure-sensitive adhesive layer in the present invention is such that the longest distance in the plane direction of each pressure-sensitive adhesive layer is within the range of 1 cm to 100 cm, more preferably within the range of 1 cm to 50 cm, and even more preferably within the range of 1 cm to 10 cm. It is preferable that it is patterned. When the longest distance in the plane direction is longer than the above range, depending on the type of the film substrate, when the film device is produced using the support for film device production of the present invention, the adhesive layer may be thermally expanded and contracted. This is because the accompanying dimensional change of the film substrate may exceed the allowable limit. Further, when the longest distance in the planar direction is shorter than the above range, it may be difficult to pattern the adhesive layer in the present invention with high accuracy.
Here, the above “longest distance in the plane direction” means that when two arbitrary points are connected with a straight line in the plane of the adhesive layer that is visually recognized when the patterned individual adhesive layer is viewed from the vertical direction. Means the distance of the longest straight line. FIG. 4 is a schematic diagram for explaining such a “longest distance in the planar direction”. A distance indicated by L in FIG. 4 corresponds to the “longest distance in the planar direction”.

  The planar shape of the pressure-sensitive adhesive layer in the present invention is not particularly limited as long as the “longest distance in the planar direction” can be within a desired range. Therefore, the planar shape of each adhesive layer may be any shape such as a rectangle, a polygon, and a circle. Further, the planar shapes of the patterned individual adhesive layers may all be the same or different.

  In addition, the distance between the individual adhesive layers patterned in the present invention depends on the type of film device produced using the support for manufacturing a film device of the present invention, the type of film substrate, the strength, the self-supporting property, etc. Accordingly, there is no particular limitation as long as the film base material is not deformed when the film base material is bonded onto the adhesive layer. In particular, in the present invention, the distance between the individual patterned adhesive layers is preferably in the range of 1 μm to 5000 μm, more preferably in the range of 1 μm to 100 μm, and in the range of 1 μm to 50 μm. More preferably.

  As an aspect in which the pressure-sensitive adhesive layer in the present invention is patterned, when a film device is produced on the film substrate using the support for film device production of the present invention, the degree of dimensional change that occurs in the film substrate is determined. The embodiment is not particularly limited as long as it can be in a desired range. As such an aspect, for example, an aspect patterned so that a groove is formed in the adhesive layer itself, a region where the adhesive layer is formed on the substrate, and a region where the adhesive layer is not formed And an embodiment patterned so that

  These aspects will be described with reference to the drawings. FIG. 5 is a schematic view showing an example of an embodiment in which the adhesive layer is patterned in the present invention. As illustrated in FIG. 5, the mode in which the adhesive layer 1b is patterned in the present invention may be a mode in which grooves are formed in the adhesive layer 1b itself (FIG. 5A). Alternatively, it may be patterned so that there are a region where the adhesive layer 1b is formed on the substrate 1a and a region where the adhesive layer 1b is not formed (FIG. 5B).

  In the present invention, any of these embodiments can be suitably used, and in particular, there are a region where the adhesive layer is formed on the substrate and a region where the adhesive layer is not formed. Thus, it is preferable that the patterning be performed. By patterning the adhesive layer in such a manner, the dimensional change that occurs in each patterned adhesive layer can be further reduced, resulting in a dimensional change in the film substrate that is bonded onto the adhesive layer. This is because this can be further prevented.

  In addition, the pressure-sensitive adhesive layer used in the present invention is preferably one that hardly undergoes dimensional change, and particularly preferably has a small coefficient of thermal expansion. Among these, the adhesive layer used in the present invention preferably has a thermal expansion coefficient of 50 ppm / ° C. or less, more preferably 25 ppm / ° C. or less, and further preferably 10 ppm / ° C. or less. When the thermal expansion coefficient is larger than the above range, depending on the mode in which the pressure-sensitive adhesive layer is patterned in the present invention, the degree of dimensional change of the film substrate bonded onto the pressure-sensitive adhesive layer can be suppressed within a predetermined range. This may be difficult.

  The thickness of the pressure-sensitive adhesive layer in the present invention is not particularly limited as long as it is within a range in which the pressure-sensitive adhesive layer can be formed into a desired pattern, but it is usually preferably within a range of 0.1 μm to 100 μm. More preferably within the range of 1 μm to 10 μm, even more preferably within the range of 0.1 μm to 1 μm.

  The adhesive layer in the present invention is made of an adhesive resin. However, the adhesive resin used in the present invention can provide the adhesive layer in the present invention with an adhesive property that can peel the film substrate. There is no particular limitation. Examples of such tacky resins include vinyl acetate resin solvent adhesives, natural rubber solvent adhesives, vinyl acetate copolymer resin emulsion adhesives, EVA resin emulsion adhesives, and urea resin adhesives. Adhesive, acrylic resin emulsion adhesive, vinyl acetate resin emulsion adhesive, isocyanate adhesive, synthetic rubber latex adhesive, epoxy resin adhesive, cyanoacrylate adhesive, phenol resin adhesive , Polyurethane adhesives, melamine resin adhesives, acrylic resin adhesives, and the like. In the present invention, any of these adhesive resins can be suitably used.

  In addition, the adhesive resin used for this invention may be only 1 type, or 2 or more types may be sufficient as it.

2. Next, the substrate used in the present invention will be described. The base material used for this invention supports the said adhesion layer.

  Although it will not specifically limit as a base material used for this invention if it can support the said adhesion layer, It is preferable that a dimensional change is hard to produce rather than the said adhesion layer. More specifically, it is preferable that the thermal expansion coefficient is smaller than that of the adhesive layer. This is because it is possible to prevent the dimension of the adhesive layer from being changed due to the dimensional change occurring in the base material.

  The coefficient of thermal expansion of the substrate used in the present invention is not particularly limited as long as it is within a range smaller than that of the adhesive layer, but in the present invention, it is more preferably 10 ppm / ° C. or less. .

  Moreover, it is preferable that the base material used for this invention consists of material with melting | fusing point of 500 degreeC or more. Examples of such a base material include a base material made of quartz glass, heat-resistant glass, metal, ceramics, or the like.

3. Next, the manufacturing method of the support for film device manufacture of this invention is demonstrated. The support for film device production of the present invention is, for example, a method in which an adhesive layer is formed on the entire surface of a substrate, and then the adhesive layer is patterned (first method), or a pattern directly on the substrate. It can be manufactured by a method (second method) for forming an adhesive layer.

  In the first method, examples of the method for forming the adhesive layer on the entire surface of the substrate include a method of coating an adhesive layer-forming coating solution containing an adhesive resin on the substrate, and an adhesive. A method can be mentioned in which a dry film made of an adhesive resin is used and the dry film is bonded onto the substrate.

  Here, in the first method, examples of the method for patterning the adhesive layer include a laser patterning method, a photolithography method, a screen printing method, a flexographic printing method, an ink jet printing method, an offset printing method, a gravure printing method, and a gravure method. The printing method etc. can be mentioned.

  On the other hand, in the second method, as a method for forming a patterned adhesive layer, an adhesive layer-forming coating solution containing an adhesive resin is applied in a pattern on the substrate by a printing method or the like. And a method of transferring a pressure-sensitive adhesive layer previously formed in a pattern on another substrate onto the substrate used in the present invention.

B. Next, the manufacturing method of the film device of this invention is demonstrated. As described above, the film device manufacturing method of the present invention uses the film device manufacturing support according to the present invention so that the film substrate can be peeled onto the adhesive layer of the film device manufacturing support. Film substrate adhesion step for adhering to the substrate, device production step for producing a device on the surface of the film substrate, and peeling the film substrate on which the device is produced from the adhesive layer of the support for film device production And a film base material peeling step.

Such a film device manufacturing method of the present invention will be described with reference to the drawings. FIG. 6 is a schematic view showing an example of a method for producing a film device of the present invention. As illustrated in FIG. 6, the film device manufacturing method of the present invention uses a film device manufacturing support 1 (FIG. 6A), and on the film device manufacturing support 1, a film substrate 2. A film base material adhering step for adhering the film so as to be peelable (FIG. 6B), a device manufacturing step for producing the device 3 on the surface of the film base material 2 (FIG. 6C), and the device And a film base material peeling step (FIG. 6D) for peeling the film base material 2 from which the film 3 is produced from the support 1 for film device production.
In such an example, the film device manufacturing method of the present invention is characterized in that the film device manufacturing support 1 according to the present invention is used as the film device manufacturing support. .

  According to the method for producing a film device of the present invention, the support for film device production according to the present invention is used as the support to which the film substrate is bonded in the film substrate adhesion step. In the device production process, a minute and high-performance device can be produced on the film substrate. For this reason, according to this invention, a microdevice is produced with high precision on a film base material, and the film device excellent in performance can be manufactured.

The method for producing a film device of the present invention includes at least a film base material adhesion step, a device preparation step, and a film base material peeling step, and may have other steps as necessary. is there.
Hereinafter, each process used for this invention is demonstrated in order.

1. Film substrate adhesion process First, the film substrate adhesion process used for this invention is demonstrated. This step is a step of using the support for film device production according to the present invention to cause the film substrate to adhere to the adhesive layer of the support for film device production so as to be peeled off.

(1) Film base material The film base material used in this step can be appropriately selected according to the type and application of the film device produced by the present invention, and is not particularly limited. Absent. Examples of the film substrate used in the present invention include polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, polyamide, polycarbonate, cellulose triacetate, polyolefin, Examples thereof include plastic sheets such as polystyrene, polyethylene, polypropylene, polymethyl methacrylate, polyolefin, polyvinyl chloride, polyvinylidene chloride, epoxy resin, phenol resin, urea resin, melamine resin, silicone resin, and acrylic resin.

(2) Film device manufacturing support The film device manufacturing support used in this step is a film device manufacturing support according to the present invention. Therefore, the support for manufacturing a film device used in this step is the same as that described in the above section “A. Support for manufacturing a film device”, and thus the description thereof is omitted here.

(3) Adhesion method of film base material In this step, as a method of adhering the film base material on the adhesive layer of the support for film device production so that the film base material can be peeled off, a film is formed at a predetermined position on the adhesive layer. The method is not particularly limited as long as it is a method capable of adhering the substrate, and depending on the type of the film substrate, the mode in which the adhesive layer is formed in the support for film device production, etc., any The method can be used.

2. Device Fabrication Process Next, a device fabrication process used in the present invention will be described. This step is a step of producing a device on the film substrate adhered on the support for film device production in the film substrate adhesion step.

  In this step, the device formed on the film substrate is appropriately determined according to the use of the film device produced by the present invention and is not particularly limited. Examples of such devices include organic semiconductor TFTs, inorganic semiconductor TFTs, organic ELs, electronic paper, and color filters.

In this step, a plurality of steps are usually used to manufacture a device. For example, in the case where an organic TFT is produced on a film substrate in this step, usually a gate electrode production step for producing a gate electrode on the film substrate, a gate insulation layer for forming a gate insulation layer so as to cover the gate electrode Forming step, forming source and drain electrodes on the gate insulating layer, and forming an organic semiconductor layer made of an organic semiconductor material on a channel region constituted by the source and drain electrodes An organic semiconductor layer forming step and the like are performed. As described above, when a device is produced on a film substrate, a plurality of steps are generally used, and a device is usually produced by a plurality of steps also in this step. Therefore, in order to produce a device having excellent performance in this step, the alignment of the film base material needs to be controlled with high accuracy in each step used in this step.
In this respect, in this step, the film base material is adhered to the above-described support for manufacturing a film device according to the present invention, thereby significantly reducing the deformation and dimensional change of the film base material. Therefore, the alignment can be controlled with high accuracy. As a result, a device having excellent performance in this step can be produced.

  In this step, the method for producing a device on the film substrate is arbitrarily selected according to the type of device to be produced. For example, when manufacturing an organic TFT in this step, the method of sequentially manufacturing an organic TFT by the gate electrode forming step, the gate insulating layer forming step, the source / drain electrode forming step, and the organic semiconductor layer forming step as described above is used. It is done.

3. Next, the film substrate peeling process used for this invention is demonstrated. This step is a step of peeling the film base material on which the device was produced in the device production step from the adhesive layer of the support for film device production. The method for peeling the film substrate in this step is not particularly limited as long as the film substrate can be peeled so as not to impair the performance of the device.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

  Hereinafter, the present invention will be specifically described with reference to examples.

[Example]
A bottom gate type organic TFT was produced as a film device.

(1) Film Device Manufacturing Support Production Process A 150 mm × 150 mm × 0.7 mm glass substrate was used as a substrate, and a 150 mm × 150 mm × 0.05 mm silicon-based adhesive film was affixed on the substrate. Thereafter, the adhesive film was patterned into nine 49.9 mm squares with a laser to form an adhesive layer. In addition, the space | interval of each patterned adhesion layer was 0.1 mm.

(2) Film base material adhesion process The PEN film of 150 mm x 150 mm x 0.1 mm was stuck on the adhesion layer of the said support for film device manufacture.

(3) Device fabrication process (gate electrode / scan line formation process)
A 150 nm Al film was formed on the entire surface of the PEN film by sputtering. A photoresist (positive) was spin-coated on the substrate on which Al was formed. The spin coating at this time was held at 1800 rpm for 10 seconds. Then, after making it dry at 100 degreeC for 1 minute, pattern exposure was carried out at 50 mJ / cm < ² >. Next, the resist development of the exposed part was performed, and then it was dried in an oven at 120 ° C. for 30 minutes. Next, Al was etched in a portion without a resist to form a gate electrode and a scan line.

(Gate insulation layer formation process)
A coating solution for forming a gate insulating layer in which an acrylic resin was dissolved in a PGMEA solvent at a solid content concentration of 20 wt% was spin-coated on the substrate. The spin coating at this time was held at 1800 rpm for 10 seconds. Then, after drying for 2 minutes at 100 ° C. on a hot plate, pattern exposure was performed at 100 mJ / cm ² . Thereafter, the unexposed portion was developed and dried in an oven at 150 ° C. for 30 minutes. The film thickness of the formed gate insulating layer was 1 μm.

(Source / Drain Electrode / Data Line Formation Process)
The Ag nano paste was patterned into a source / drain electrode and a Data Line shape by a screen printing method. After patterning, the source electrode and the drain electrode were formed by drying in an oven at 150 degrees for 30 minutes.

(Organic semiconductor layer formation process)
A coating solution for forming an organic semiconductor layer in which an organic semiconductor material (polythiophene) was dissolved in a trichlorobenzene solvent at a solid content concentration of 0.2 wt% was pattern-coated on the channel forming portion by an inkjet method. Then, it was dried at 150 ° C. for 10 minutes using a hot plate under N ₂ atmosphere. The film thickness of the formed organic semiconductor layer was 0.05 μm.

(6) Dimensional accuracy evaluation The distance of the cross mark for dimensional accuracy evaluation was measured. The cross mark was formed in the gate electrode formation process. The cross mark was as shown in FIG. 7, and the design value was 135 mm. As a result of measuring the distance of the cross mark after forming the organic semiconductor, the vertical direction was 135.002 mm and the horizontal direction was 135.005 mm. As a result, the deviation from the design value was 2 μm in the vertical direction and 5 μm in the horizontal direction.

[Comparative example]
(1) Film device production process Defilm vice was produced in the same process as the Example except that the adhesive film was not patterned.

(2) Dimensional accuracy evaluation The distance of the cross mark for dimensional accuracy evaluation was measured similarly to the Example. As a result of measuring the distance of the cross mark after forming the organic semiconductor TFT, the vertical direction was 134.075 mm and the horizontal direction was 134.55 mm. As a result, the deviation from the design value was 25 μm in the vertical direction and 45 μm in the horizontal direction.

It is the schematic which shows an example of the manufacturing method of the film device which is a use of the support body for film device manufacture of this invention. It is the schematic which shows an example of the support body for film device manufacture of this invention. It is the schematic which shows an example of the support body for the conventional film device manufacture. It is the schematic explaining "the longest distance in a plane direction". It is the schematic which shows the other example of the support body for film device manufacture of this invention. It is the schematic which shows an example of the manufacturing method of the film device of this invention. It is the schematic explaining the cross mark used in the Example. It is the schematic which shows an example of the manufacturing method of the conventional film device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Support for film device manufacture 1a ... Base material 1b ... Adhesive layer 2 ... Film base material 3 ... Device 10 ... Film device 100 ... Support body 101 ... Base material 102 ... Fixed layer 110 ... Film base material 120 ... Device 130 ... Film device

Claims (3)

Using a support for manufacturing a film device, a step of laminating a film substrate on the support for manufacturing a film device, and a step of manufacturing a device on the film substrate. A film device manufacturing support for use in a film device manufacturing method for manufacturing a film device in which the device of
A film comprising: a base material; and an adhesive layer that is formed in a pattern on the base material and is made of an adhesive resin and can be adhered to the film base material so that the film base material can be peeled off. Support for device manufacturing.   2. The adhesive layer according to claim 1, wherein the adhesive layer is patterned so as to have a region where the adhesive layer is formed on the substrate and a region where the adhesive layer is not formed. Support for film device production. Using the support for manufacturing a film device according to claim 1 or 2,
A film substrate adhesion step for adhering the film substrate on the adhesive layer of the support for film device production so that the film substrate can be peeled; and
A device fabrication step of fabricating a device on the surface of the film substrate;
And a film substrate peeling step of peeling the film substrate on which the device is produced from the adhesive layer of the support for film device production.

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