JP2007163282A - Radiation detector, its manufacturing method, and radiation detection system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin radiation detection device light in weight, its manufacturing method, and a radiation detection system. <P>SOLUTION: The radiation detection device comprises a sensor panel 101 having a photoelectric conversion section 106, a wavelength conversion body 102 that is arranged on the sensor panel 101 and converts radiation into first light sensible by the photoelectric conversion section 106, an illumination section 103 that is arranged at a position facing the wavelength conversion body 102 with the sensor panel 101 sandwiched between them and radiates second light to the photoelectric conversion section, and a wavelength selectivity diffusion layer 104 that is arranged between the sensor panel 101 and the illumination section 103, absorbs the first light, and diffuses the second light. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a radiation detection apparatus, a manufacturing method thereof, and a radiation detection system, and more particularly to a radiation detection apparatus, a manufacturing method thereof, and a radiation detection system used for medical diagnostic equipment, non-destructive inspection equipment, and the like.

  Conventionally, radiation that has been provided with a light-emitting layer that irradiates light to the photoelectric conversion element or a light-guiding layer that guides light to irradiate the photoelectric conversion element in order to improve fluctuations in characteristics and S / N reduction of the photoelectric conversion element A detection device is known (see Patent Document 1).

  FIG. 7 is a cross-sectional view of a conventional radiation detection apparatus 700. In the sensor panel 701, a phosphor layer 702 is formed at a position facing the photoelectric conversion element. The sensor panel 701 includes a wiring part, a photoelectric conversion part, an electrode extraction part, and a protective layer that protects the sensor panel surface on a glass substrate.

  On the back side of the sensor panel 701, a light emitting layer 704 as a light source or a light guide layer 704 for guiding light from the light source to the back side of the sensor panel is provided. Further, a diffusion layer 705 is provided in order to propagate the light from the light source uniformly to the sensor panel 701 (see Patent Documents 2 and 3).

Further, it is known that a phosphor light absorption layer 706 that absorbs a fluorescence wavelength is provided in order to reduce noise generated when light from the phosphor layer 702 is reflected and incident on the photoelectric conversion element again. (See Patent Documents 2 and 3).
JP 2002-040144 A US Pat. No. 5,973,327 US Pat. No. 6,655,675

  However, since the conventional radiation detection apparatus adds a diffusion layer and a phosphor light absorption layer, the entire radiation detection apparatus becomes thick and is unsuitable for both size and weight for use in portable applications. There was a problem.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a lightweight and thin radiation detection apparatus, a manufacturing method thereof, and a radiation detection system.

  A first aspect of the present invention relates to a radiation detection apparatus, a sensor panel having a photoelectric conversion unit, and a wavelength disposed on the sensor panel for converting radiation into first light that can be sensed by the photoelectric conversion unit. A converter, an illumination unit that is disposed at a position facing the wavelength converter with the sensor panel interposed therebetween, and illuminates the photoelectric conversion unit with second light, and between the sensor panel and the illumination unit And a wavelength-selective diffusion layer that absorbs the first light and diffuses the second light.

  According to a second aspect of the present invention, there is provided a method for manufacturing a radiation detection apparatus, comprising: a step of forming a sensor panel; and a wavelength converter that converts radiation into first light that can be detected by the photoelectric conversion unit. And forming a lighting unit that irradiates the photoelectric conversion unit with second light at a position facing the wavelength converter with the sensor panel interposed therebetween, the wavelength converter including: A wavelength-selective diffusion layer that absorbs the first light and diffuses the second light is formed between the sensor panel and the illumination unit after the forming step and before the step of forming the illumination unit. It includes a step of forming in between.

  A third aspect of the present invention relates to a radiation detection system, the radiation detection apparatus described above, a signal processing means for processing a signal from the radiation detection apparatus, and a recording means for recording a signal from the signal processing means. And a display means for displaying the signal from the signal processing means, and a transmission processing means for transmitting the signal from the signal processing means.

  ADVANTAGE OF THE INVENTION According to this invention, a lightweight and thin radiation detection apparatus, its manufacturing method, and a radiation detection system can be provided.

[First embodiment]
Hereinafter, a radiation detection apparatus according to a preferred first embodiment of the present invention will be described in detail with reference to the drawings. In a preferred embodiment of the present invention, the radiation includes electromagnetic waves such as X-rays, α rays, β rays, and γ rays.

  FIG. 1 is a diagram showing a configuration of a radiation detection apparatus according to a preferred first embodiment of the present invention. The radiation detection apparatus 100 according to the present embodiment includes a sensor panel 101. A wavelength converter 102 is formed on the sensor panel 101, and illumination is provided at a position facing the wavelength converter 102 with the sensor panel 101 interposed therebetween. A portion 103 is formed. The radiation detection apparatus 100 also includes a wavelength selective diffusion layer 104 between the sensor panel 101 and the illumination unit 103.

  The sensor panel 101 includes a substrate 105, and various components are formed on the substrate 105. For example, a photoelectric conversion unit 106, a wiring unit 107 connected to the photoelectric conversion unit 106, an electrode extraction unit (electrode pad unit) 108 connected to the wiring unit 107, and the like are formed on the substrate 105. A first protective layer 109 is formed on the photoelectric conversion unit 106 and the wiring unit 107.

The wavelength converter 102 is formed on the first protective layer 109 (or a second protective layer 110 described later). The wavelength converter 102 includes a scintillator that converts radiation into first light in a wavelength band that can be sensed by the photoelectric conversion unit 106. As a method of forming the wavelength converter layer 102, the wavelength converter layer 102 may be formed directly on the first protective layer 109 (or the second protective layer 110), or the wavelength converter is formed on the support substrate. Alternatively, the layer 102 may be formed and bonded together. As a material of the wavelength converter layer 101, it is preferable to use a particle wavelength converter such as Gd ₂ O ₂ S: Tb, an alkali halide wavelength converter, or the like. Moreover, as a material of the wavelength converter layer 101, a wavelength converter having an alkali halide columnar crystal structure such as CsI: Na, CsI: Tl, NaI: Tl, LiI: Eu, KI: Tl and the like that can be formed by vapor deposition. More preferably, it is used. In addition, in order to improve the adhesion of the wavelength converter layer 102, it is desirable to perform a surface treatment on the surface of the first protective layer 109 (or the second protective layer 110). As such surface treatment, for example, corona treatment, plasma treatment, UV irradiation treatment or the like can be used.

  The illumination unit 103 is disposed at a position facing the wavelength converter 102 with the sensor panel 101 interposed therebetween, and converts the second light having a wavelength band different from the first light that can be detected by the photoelectric conversion unit 106 to the photoelectric conversion unit 106. Irradiate. The illumination unit 103 may be a light emitting layer as a light source that is disposed below the sensor panel 101 and directly emits light, or guides light from the light source disposed on the side surface of the sensor panel 101. It may be a light guide layer or a combination thereof. As the light source of the illuminating unit 103, any light source that can be used for a flat panel backlight, such as an LED light source, a cold cathode tube, or an EL light source, may be used. In particular, an LED light source that is inexpensive and can be formed thin is preferable. For example, a blue LED (465-475 nm), a blue-green LED (493-498 nm), a green LED (520-535 nm), a yellow LED (590 nm), an orange LED (611 nm), and a red LED (630 nm, 644 nm, 660 nm) are used. be able to. Further, as the LED light source, in addition to these LEDs, a white LED mixed with each color can be used. FIG. 3 is a diagram showing the emission wavelength intensity of the white LED light source. In the white LED light source, phosphor emission wavelength peaks exist in three regions of 450 to 500 nm, 500 to 600 nm, and 600 to 700 nm. Therefore, in the case of a white LED light source, even if there is a wavelength-selective diffusion layer that absorbs light from the wavelength converter, there is light emission in other regions, so that it can efficiently serve as a light source.

  When CsI cesium iodide is used as the wavelength converter 102, a phosphor emission wavelength peak exists in the region of 550 to 650 nm as shown in FIG. Therefore, a diffusion layer that absorbs the same wavelength region is selected, and conversely, a blue LED (465-475 nm), an orange LED (611 nm) having a light emission wavelength different from the light emission peak of the wavelength converter 102 as a light source is particularly desirable. A red LED (660 nm) or the like is suitable. Moreover, you may use white LED etc. which mixed each color.

  Similarly, if the wavelength converter 102 is GOS gadolinium oxysulfide, a narrow emission wavelength peak exists as shown in FIG. Therefore, the wavelength-selective diffusion layer 104 that absorbs the same wavelength region can be selected, and conversely, all LEDs having an emission wavelength different from the emission peak of the wavelength converter 102 can be used as the illumination unit 103. For example, a blue LED (465-475 nm), a blue green LED (493-498 nm), a yellow LED (590 nm), an orange LED (611 nm), a red LED (630 nm, 644 nm, 660 nm), etc., and a white LED in which each color is mixed Etc. can be used.

  As the substrate 105, an insulating substrate such as glass that can transmit light from the lighting unit 103 is preferably used.

  The photoelectric conversion unit 106 is arranged one-dimensionally or two-dimensionally on the substrate 105. The photoelectric conversion unit 106 includes a photoelectric conversion element and a switching element. As the photoelectric conversion element, for example, a photosensor such as a pn photodiode, a pin photodiode, or a MIS sensor can be used. As the switching element, a TFT (Thin Film Transistor) or the like can be used. A pixel is configured by using a photoelectric conversion element together with a switching element. Moreover, as a material of the photoelectric conversion unit 106, for example, amorphous silicon, polysilicon, single crystal silicon, an organic material, or the like can be used. In particular, when a TFT is used as the switching element, the photoelectric conversion element is preferably formed of non-single crystal silicon (amorphous silicon or polysilicon). When single crystal silicon is used as the material of the photoelectric conversion unit 106, a CCD, a CMOS sensor, or the like can be used as the photoelectric conversion element.

The first protective layer 109 covers and protects the photoelectric conversion unit 106 and the wiring unit 107. As a material of the first protective layer 109, for example, silicon nitride can be used. A second protective layer 110 may be provided on the first protective layer 109 as necessary. As the first protective layer 109 or the second protective layer 110, for example, SiN, TiO ₂ , LiF, Al ₂ O ₃ , MgO, or the like can be used. In addition to these, polyphenylene sulfide resin, fluororesin, polyether ether ketone resin, liquid crystal polymer, polyether nitrile resin, polysulfone resin, polyether sulfone resin, polyarylate resin, and polyamideimide resin can be used. In addition to these, polyetherimide resin, polyimide resin, epoxy resin, acrylic resin, silicon resin, and the like can be used. The first protective layer 109 or the second protective layer 110 has a high transmittance with respect to the wavelength of the light emitted by the wavelength converter 102 because the light converted by the wavelength converter 102 passes through the radiation. What is shown is preferred.

  The wavelength-selective diffusion layer 104 is disposed between the sensor panel 101 and the illumination unit 103, absorbs the first light that can be sensed by the photoelectric conversion unit 106, and emits the second light emitted by the illumination unit 103. Spread. The first light is absorbed because the light from the wavelength converter 102 that is not secured by the photoelectric conversion unit 106 is reflected by the back surface of the sensor panel 101 and enters the photoelectric conversion unit 106 again. This is to prevent noise. In order to prevent such noise, a layer that absorbs light of the emission wavelength of the wavelength converter 102 is necessary. On the other hand, the second light is diffused in the sensor panel 101 in order to diffuse the light and reduce the unevenness in the amount of light in the surface of the sensor panel 101, and to improve the characteristic variation and S / N of the photoelectric conversion unit 106. This is to irradiate light uniformly. Both functions are essential for obtaining good characteristics of the sensor panel 101.

  In a preferred embodiment of the present invention, both of these functions can be combined to reduce the thickness of the radiation detection apparatus 100 and reduce the weight of the radiation detection apparatus 100.

  As the material of the wavelength selective diffusion layer 104, it is preferable to use a material that can absorb light in a region at least wider than the emission wavelength region of the wavelength converter 102. When the wavelength converter 102 is CsI (Tl), a broad peak exists in the vicinity of 500 to 550 nm. Therefore, as such a material, a so-called magenta filter obtained by molding a resin in which a magenta dye / pigment that absorbs light emitted from CsI (Tl) is melted or dispersed in a resin can be used. Such a resin is preferably one that can be easily molded, and more preferably an acrylic resin having excellent optical properties. Although it is preferable to absorb all the emitted light of the wavelength converter 102, it may not be possible to absorb all the emitted light. In this case, the emitted light from the wavelength converter 102 is reflected by the back surface of the sensor panel 101 and passes through the wavelength selective diffusion layer 104 twice before reaching the photoelectric conversion unit 106 again. Therefore, since a large attenuation effect can be obtained, the return light can be reduced to a substantially low noise level.

  Moreover, since the light from the illumination unit 103 is irradiated to improve the characteristic variation of the photoelectric conversion unit 106, an appropriate amount of irradiation light is required. For this reason, the wavelength selective diffusion layer 104 needs to transmit light from the illumination unit 103. It is preferable that the wavelength region absorbed by the wavelength selective diffusion layer 104 matches the wavelength region of the emitted light from the wavelength converter 102 as much as possible. Therefore, it is preferable that the light emitted from the illumination unit 103 is not absorbed, or that the emission wavelength region of the illumination unit 103 is wider than the wavelength absorption region of the wavelength selective diffusion layer 104.

  The thickness of the wavelength selective diffusion layer 104 may be any thickness as long as the wavelength selection effect and the diffusion effect are satisfied. However, the thickness may be thinner for the portability and weight reduction of the panel. Preferably, for example, 0.2 mm to 10 mm is preferable, and 2 to 6 mm is more preferable.

  In order to give the wavelength selective diffusion layer 104 the effect as a diffusion layer, for example, a method of roughening the surface of the wavelength selective diffusion layer 104 can be used. Thereby, the light traveling from the illumination unit 103 to the wavelength selective diffusion layer 104 is efficiently dispersed, and unevenness of the light from the illumination unit 103 can be reduced. When the surface of the wavelength selective diffusion layer 104 is roughened to obtain a diffusion effect, the sensor panel of the wavelength selective diffusion layer 104 is used to diffuse light incident from the illumination unit 103 disposed on the back surface of the sensor panel 101. The surface on the 101 side is preferably roughened. As a method for forming such a rough surface, for example, sandblasting, etching, or the like can be used. The average roughness of such a rough surface is preferably Rz = 2 to 20 μm. Since the effect of the wavelength selective diffusion layer 104 as a diffusion layer is to make the light emitted from the illumination unit 103 more uniform, the surface roughness is preferably uniform in the surface.

  When the light source of the illumination unit 103 is positioned on the side surface of the sensor panel 101 and the light from the light source is introduced into the sensor panel 101 by the illumination unit 103, that is, when a light guide layer is used, as shown in FIG. The reflective layer 201 may be disposed on the portion 103. The reflective layer 201 may form a so-called micro-reflector shape having a wave shape, a prism shape, or the like on the surface of the illumination unit 103, or may be subjected to micro dot printing with reflective ink. Further, the reflection function can be added by forming layers having different reflection functions. For example, a resin film containing reflective particles may be attached. Specifically, it can be easily formed by attaching a generally known white PET film. For example, if the housing that supports the sensor panel 101 has a reflective surface that reflects light from the illumination unit 103, the function of the reflective layer 201 is added by directly stacking the housing on the housing. it can. The reflective layer 201 is used for efficiently guiding the light of the light source of the illumination unit 103 and is preferably formed so as to cover the lower surface of the light guide layer of the illumination unit 103. Furthermore, it is more preferable that the illumination unit 103 is formed so as to cover the lower surface of the light source, and it is further preferable that the illumination unit 103 is formed so as to cover the side surface of the light guide layer. Therefore, the material of the reflective layer 201 is preferably a material that can be easily covered, such as printing ink and resin film.

  Further, the radiation detection apparatus 100 may be provided with a moisture-proof protective layer that also serves as a moisture-resistant protective layer and a reflective layer on the wavelength converter 102, and the moisture-proof protective layer may also serve as an electromagnetic shield layer. Such a moisture-resistant protective layer is formed so as to cover the wavelength converter 102 from the upper surface to the side surface, and at least the end portion of the sensor panel 101 is shielded from the surface of the sensor panel 101 and the outside. It is desirable that it be formed directly on the surface.

  The reflective layer provided on the wavelength converter 102 is preferably made of a material that reflects light from the wavelength converter 102 and prevents moisture from entering from the outside, and particularly a metal material. Specifically, metals having high reflectivity such as Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, and Au are desirable. Furthermore, it is desirable to laminate a resin layer (not shown) on the reflective layer for the purpose of protecting the rigidity.

  Further, in the radiation detection apparatus 100, the electrode extraction portion 108 of the sensor panel 101 is provided with a terminal portion of a flexible circuit board (not shown) on which a driving or detection integrated circuit IC is mounted with an anisotropic conductive adhesive (not shown). Are attached to each other.

  Hereinafter, a manufacturing method of a radiation detection device concerning a suitable 1st embodiment of the present invention is explained. In addition, the arrangement, material, property, size, manufacturing method, and the like of each component in the manufacturing method according to the present embodiment can be those described in each component of the radiation detection apparatus described above.

  First, the sensor panel 101 is formed as shown in FIG. Specifically, the photoelectric conversion unit 106, the wiring unit 107, and the electrode extraction unit 108 are formed on the substrate 105.

  Next, the first protective layer 109 is formed on the sensor panel 101, and the wavelength converter 102 is further formed thereon. Here, if necessary, the second protective layer 110 may be formed over the first protective layer 109.

  Next, surface treatment is performed on the first protective layer 109 (or the second protective layer 110). For example, when plasma treatment is used as the surface treatment, it can be performed using an atmospheric pressure plasma cleaning apparatus with a reaction tube width of 75 mm, an irradiation distance of 5 mm, an operation speed of 75 mm, and an output of 0.8 kW.

  Next, the wavelength converter 102 is formed at a position corresponding to the pixel region of the first protective layer 109 (or the second protective layer 110). As the wavelength converter 102, for example, CsI: Tl (thallium activated cesium iodide) or the like can be deposited with a thickness of 500 μm.

  Next, a wavelength converter protective layer is disposed so as to cover the surface and side surfaces of the wavelength converter 102. A reflective layer is disposed on the wavelength converter protective layer.

  Next, a material capable of absorbing light in a region having absorption in at least a region wider than the emission wavelength region of the wavelength converter 102 is formed on the substrate 105, for example, a magenta filter resin made of acrylic resin.

  Next, the surface of the formed material is roughened by a sandblast method or the like, and the wavelength selective diffusion layer 104 is formed.

  Next, the illuminating unit 103 is overlaid on the wavelength selective diffusion layer 104 so that the rough side faces the sensor panel 101 on the surface opposite to the wavelength converter 102 formed on the sensor panel 101. Here, a reflective layer 201 (for example, a white PET film (thickness: 188 μm) or the like) may be formed on the back surface of the illumination unit 103.

  Next, a terminal part of a flexible circuit board (not shown) is thermocompression bonded to the electrode extraction part 104 on the sensor panel 101 via an anisotropic conductive adhesive (not shown) to obtain a radiation detection apparatus.

[Second Embodiment]
In the second preferred embodiment of the present invention, a method of dispersing and containing light diffusing particles having a light diffusing function in the wavelength selective diffusing layer 104 is used. The size of the light diffusing particles is preferably, for example, 5 to 200 μm, and more preferably 5 to 30 μm. As a material for the light diffusion particles, for example, a resin material such as a polypropylene resin, a polystyrene resin, a polyethylene resin, an acrylic resin, or a generally known metal particle such as a glass particle or a titanium oxide particle is used. Can do. The effect of the wavelength selective diffusion layer 104 as a diffusion layer is to make the light emitted from the illumination unit 103 more uniform, and therefore it is preferable that the light diffusion particles are uniformly diffused in the plane. In the thickness direction of the wavelength-selective diffusion layer 104, the light diffusion particles may be uniformly dispersed in all layers, but the inclusion in the vicinity of the sensor panel 101 is prevented so that light from the illumination unit 103 is not attenuated. You may fill with a diffusion particle so that quantity may become high. The content of the diffusing particles is preferably 30% vol or less in consideration of the self-holding property of the wavelength selective diffusing layer 104 itself.

  Hereinafter, a method for manufacturing the radiation detection apparatus according to the preferred second embodiment of the present invention will be described. In addition, the arrangement, material, property, size, manufacturing method, and the like of each component in the manufacturing method according to the present embodiment can be those described in each component of the radiation detection apparatus described above.

  First, the sensor panel 101 is formed as shown in FIG. Specifically, the photoelectric conversion unit 106, the wiring unit 107, and the electrode extraction unit 108 are formed on the substrate 105.

  Next, the first protective layer 109 is formed on the sensor panel 101, and the wavelength converter 102 is further formed thereon. Here, if necessary, the second protective layer 110 may be formed over the first protective layer 109.

  Next, surface treatment is performed on the first protective layer 109 (or the second protective layer 110). For example, when plasma treatment is used as the surface treatment, it can be performed using an atmospheric pressure plasma cleaning apparatus with a reaction tube width of 75 mm, an irradiation distance of 5 mm, an operation speed of 75 mm, and an output of 0.8 kW.

  Next, the wavelength converter 102 is formed at a position corresponding to the pixel region of the first protective layer 109 (or the second protective layer 110). As the wavelength converter 102, for example, CsI: Tl (thallium activated cesium iodide) can be deposited with a thickness of 500 μm.

  Next, a wavelength converter protective layer is laminated on the wavelength converter 102. As a wavelength converter protective layer, the structure which has arrange | positioned the 100-micrometer-thick acrylic adhesive sheet can be used for the Al surface side of the Al / pet sheet formed by laminating | stacking Al40micrometer and PET50micrometer, for example.

  Next, the wavelength selective diffusion layer 104 is formed. For example, the wavelength-selective diffusion layer 104 can be formed by melting a magenta dye on the substrate 105 and molding an acrylic resin plate containing particles containing expanded polypropylene as diffusion particles. .

  Next, the illumination unit 103 is overlaid on the wavelength selective diffusion layer 104. Here, a reflective layer 201 (for example, a white PET film (thickness: 188 μm) or the like) may be formed on the back surface of the illumination unit 103.

  Next, a terminal part of a flexible circuit board (not shown) is thermocompression bonded to the electrode extraction part 104 on the sensor panel 101 via an anisotropic conductive adhesive (not shown) to obtain a radiation detection apparatus.

[Application example]
FIG. 6 is a system diagram in which the radiation detection apparatus according to the preferred embodiment of the present invention is applied to a radiation imaging system.

  The features of this radiation imaging system are as follows. That is, X-rays 6060 generated by an X-ray tube 6050 as an X-ray generation source pass through an observation part 6062 such as a chest of a patient or a subject 6061 and enter the radiation detection apparatuses 100 and 200. The incident X-ray 6060 includes information inside the subject 6061. In response to the incidence of the X-ray 6060, the radiation detection apparatuses 100 and 200 obtain electrical information. This information is converted into a digital signal, subjected to image processing by an image processor 6070 as signal processing means, and can be observed on a display 6081 as display means in a control room (control room).

  The image-processed information can be transferred to a remote place or the like by a transmission processing means such as a telephone line or wireless 6090, and is displayed on a display 6081 or output to a film or the like. It is also possible for a doctor in the ground to make a diagnosis. In this way, information obtained in the doctor room is recorded and stored in a recording medium using various recording materials such as an optical disk, a magneto-optical disk, and a magnetic disk by a recording unit 6100 as a recording means such as a film processor. You can also. Further, it can be recorded and stored in a recording medium 6110 such as a film or paper.

  As described above, according to the radiation detection apparatus and the radiography system according to the preferred embodiment of the present invention, the generation of noise caused by the leaked light from the wavelength converter light source is reduced, and irradiation is performed from the irradiation unit. The characteristics of the photoelectric conversion unit can be improved by the light that is emitted.

  Further, the stacked structure of the radiation detection apparatus can be simplified, and the constituent layers of the radiation detection apparatus can be thinned, so that the entire apparatus and system can be reduced in weight and thickness. As a result, a low-cost and highly durable radiation detection apparatus and radiation imaging system can be realized.

It is sectional drawing which shows the structure of the radiation detection apparatus which concerns on suitable 1st Embodiment of this invention. It is sectional drawing which shows the structure of the other radiation detection apparatus which concerns on suitable 1st Embodiment of this invention. It is a figure which shows the light emission wavelength intensity of a white LED light source. It is a figure which shows the light emission wavelength peak of CsI cesium iodide. It is a figure which shows the light emission wavelength peak of GOS gadolinium oxysulfide. It is a conceptual diagram which shows the structure of the radiography system which concerns on the application example of this invention. It is sectional drawing which shows the structure of the conventional radiation detection apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Radiation detection apparatus 101 Sensor panel 102 Wavelength conversion body 103 Illumination part 104 Wavelength selective diffusion layer 106 Photoelectric conversion part

Claims (14)

A sensor panel having a photoelectric conversion unit;
A wavelength converter that is disposed on the sensor panel and converts radiation into first light that can be sensed by the photoelectric conversion unit;
An illumination unit that is disposed at a position facing the wavelength converter with the sensor panel interposed therebetween, and that irradiates the photoelectric conversion unit with second light,
A wavelength-selective diffusion layer that is disposed between the sensor panel and the illumination unit and absorbs the first light and diffuses the second light;
A radiation detection apparatus comprising:   The radiation detection apparatus according to claim 1, wherein the wavelength selective diffusion layer is capable of absorbing light in a region wider than an emission wavelength region of the first light.   The radiation detection apparatus according to claim 1, wherein the wavelength selective diffusion layer does not absorb the second light.   The radiation detection apparatus according to claim 1, wherein the wavelength selective diffusion layer absorbs the first light in a region narrower than an emission wavelength region of the second light.   The radiation detecting apparatus according to claim 1, wherein the wavelength selective diffusion layer has a rough surface.   The radiation detecting apparatus according to claim 5, wherein the rough surface is formed on a surface of the wavelength selective diffusion layer on a sensor panel side.   The radiation detection apparatus according to claim 1, wherein the wavelength selective diffusion layer contains light scattering particles.   The radiation detection apparatus according to claim 7, wherein the light scattering particles include a resin material, glass particles, and metal fine particles.   The radiation detection apparatus according to claim 8, wherein the resin material includes a polypropylene resin, a polystyrene resin, a polyethylene resin, and an acrylic resin.   The radiation detection apparatus according to claim 8, wherein the light scattering particles are filled so that a content in the vicinity of the sensor panel is high.   The radiation detection apparatus according to claim 1, further comprising a reflective layer disposed in the illumination unit.   The said sensor panel has an insulating board | substrate which can permeate | transmit light, The said photoelectric conversion part is arrange | positioned on the said insulating board | substrate, The any one of Claim 1 thru | or 11 characterized by the above-mentioned. The radiation detection apparatus according to item. Forming a sensor panel;
Forming on the sensor panel a wavelength converter that converts radiation into first light that can be sensed by the photoelectric converter;
Forming an illumination unit that irradiates the photoelectric conversion unit with second light at a position facing the wavelength converter with the sensor panel interposed therebetween;
Including
After the step of forming the wavelength converter and before the step of forming the illumination unit, a wavelength-selective diffusion layer that absorbs the first light and diffuses the second light is formed with the sensor panel. The manufacturing method of the radiation detection apparatus characterized by including the process formed between the said illumination parts. The radiation detection apparatus according to any one of claims 1 to 12,
Signal processing means for processing signals from the radiation detection device;
Recording means for recording a signal from the signal processing means;
Display means for displaying a signal from the signal processing means;
Transmission processing means for transmitting a signal from the signal processing means;
A radiation detection system comprising:

Images