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JP2007150038A - Optical semiconductor device and method for fabrication thereof - Google Patents

Optical semiconductor device and method for fabrication thereof Download PDF

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Publication number
JP2007150038A
JP2007150038A JP2005343539A JP2005343539A JP2007150038A JP 2007150038 A JP2007150038 A JP 2007150038A JP 2005343539 A JP2005343539 A JP 2005343539A JP 2005343539 A JP2005343539 A JP 2005343539A JP 2007150038 A JP2007150038 A JP 2007150038A
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bare chip
optical semiconductor
semiconductor device
resin
substrate
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Tomohiko Ishida
智彦 石田
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TDK Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which prevents malfunction due to light and ensures a desirable operability, and to provide a method for fabrication thereof. <P>SOLUTION: A coating is formed on a receiver 21 on a bare chip 11 having a semiconductor device equipped with the receiver 21, and thereafter it is mounted on a die pad 13 of a substrate 12 having an electrode terminal 14. An electrode pad 22 and the electrode terminal 14 are electrically connected via a wire 15, and thereafter a resin 16 is pasted on the periphery and top of the bare chip 11. Successively, the resin 16 is cured to remove a coating member. Accordingly, the optical semiconductor device 10 is manufactured as defiantly sealed with the resin 16 up to the receiver 21. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、フォトダイオード等を備える光学半導体装置とその製造方法に関する。   The present invention relates to an optical semiconductor device including a photodiode and a method for manufacturing the same.

従来、半導体装置において、電極パッドやワイヤ等の金属部材を外気に含まれる水分による腐食や塵・埃等から保護するため、これらの金属部材を樹脂で封止する方法が採られている。半導体装置がフォトダイオード等を備える光学半導体装置である場合、光学半導体装置に搭載された受光部からの光の透過、又は受光部への光の透過を妨げないよう、透光性を備える樹脂を用いて封止している(例えば、特許文献1)。   2. Description of the Related Art Conventionally, in a semiconductor device, in order to protect metal members such as electrode pads and wires from corrosion caused by moisture contained in outside air, dust, dust, and the like, a method of sealing these metal members with a resin has been employed. When the semiconductor device is an optical semiconductor device including a photodiode or the like, a resin having translucency is used so as not to prevent transmission of light from the light receiving unit mounted on the optical semiconductor device or transmission of light to the light receiving unit. It is used and sealed (for example, Patent Document 1).

また、従来、半導体装置の信号配線に光が照射されると、寄生電流の発生によって回路が誤作動し正確な電流検出が妨げられる恐れがあるため、特許文献2に開示されているように半導体装置の半導体素子回路(信号処理回路)上をメタルの遮光膜で覆うことが行われている。   Conventionally, when light is applied to the signal wiring of a semiconductor device, the circuit may malfunction due to the generation of parasitic current, which may prevent accurate current detection. The semiconductor element circuit (signal processing circuit) of the apparatus is covered with a metal light-shielding film.

例えば、従来の半導体装置80を図5に示す。半導体装置80は、図示するようにベアチップ81と、基板82と、ダイパッド83と、電極端子84と、ワイヤ85と、封止樹脂86と、メタル遮光膜87と、受光部91と、電極パッド92と、信号処理回路部93と、を備える。信号処理回路部93を覆うようにメタル遮光膜87が形成されている。また、ベアチップ81、電極端子84、ワイヤ85等は、透明な樹脂からなる封止樹脂86に覆われている。
特開平5−136293号公報 特開2001−196415号公報
For example, a conventional semiconductor device 80 is shown in FIG. As illustrated, the semiconductor device 80 includes a bare chip 81, a substrate 82, a die pad 83, an electrode terminal 84, a wire 85, a sealing resin 86, a metal light shielding film 87, a light receiving portion 91, and an electrode pad 92. And a signal processing circuit unit 93. A metal light shielding film 87 is formed so as to cover the signal processing circuit section 93. The bare chip 81, the electrode terminal 84, the wire 85, and the like are covered with a sealing resin 86 made of a transparent resin.
JP-A-5-136293 JP 2001-196415 A

ところで、図5に示す従来の半導体装置80のメタル遮光膜87は、スパッタリング等によって成膜した後に、フォトレジストパターンを形成し、不要なメタル層を除去することによって形成する。したがって、メタル遮光膜87を形成するためには、高価なフォトマスクを用いる必要があるため、光学半導体装置80の製造費用が増加する問題がある。さらに、メタル遮光膜87を形成することは、光学半導体装置80の製造工程を増加させ、また、工程が増加することによる製造費用の増加の問題もある。しかし、上述したように従来光学半導体装置は透明の樹脂からなる封止樹脂86でベアチップ81全体がパッケージされるため、光学半導体装置を良好に動作させるためにはメタル遮光膜87を省略することは不可能であった。   Incidentally, the metal light-shielding film 87 of the conventional semiconductor device 80 shown in FIG. 5 is formed by forming a photoresist pattern and removing an unnecessary metal layer after film formation by sputtering or the like. Therefore, since it is necessary to use an expensive photomask in order to form the metal light shielding film 87, there is a problem that the manufacturing cost of the optical semiconductor device 80 increases. Furthermore, the formation of the metal light shielding film 87 increases the manufacturing process of the optical semiconductor device 80, and there is a problem that the manufacturing cost increases due to an increase in the number of processes. However, as described above, in the conventional optical semiconductor device, the entire bare chip 81 is packaged with the sealing resin 86 made of a transparent resin. It was impossible.

そこで、メタル遮光膜を用いず、製造工程及び製造時間を短縮することができ、更に金属部材を外的環境から保護し、且つ光の照射による回路の誤動作を防ぐことにより、良好な動作性を備える光学半導体装置とその製造方法が求められている。   Therefore, it is possible to shorten the manufacturing process and manufacturing time without using a metal light-shielding film, and to protect the metal member from the external environment and prevent malfunction of the circuit due to light irradiation, thereby achieving good operability. There is a need for an optical semiconductor device and a method for manufacturing the same.

本発明は、上述した実情に鑑みてなされた発明であり、良好な動作性を備える光学半導体装置とその製造方法を提供することを目的とする。   The present invention has been made in view of the above circumstances, and an object thereof is to provide an optical semiconductor device having good operability and a method for manufacturing the same.

上記目的を達成するため、本発明の第1の観点にかかる光学半導体装置は、
電極端子が形成された基板と、
前記基板上に搭載され、電極パッドと、受光部又は発光部を有する半導体素子と、を備えるベアチップと、
前記電極端子と前記電極パッドとを電気的に接続する導電部材と、を備え、
少なくとも前記導電部材と、前記電極パッドとを覆い、且つ前記ベアチップの前記受光部又は発光部に挑むように形成された、不透光性の樹脂を、更に備えることを特徴とする。
In order to achieve the above object, an optical semiconductor device according to the first aspect of the present invention includes:
A substrate on which electrode terminals are formed;
A bare chip mounted on the substrate and comprising an electrode pad and a semiconductor element having a light receiving portion or a light emitting portion;
A conductive member that electrically connects the electrode terminal and the electrode pad;
It further comprises an opaque resin that covers at least the conductive member and the electrode pad and is formed so as to challenge the light receiving portion or the light emitting portion of the bare chip.

前記ベアチップはほぼ矩形であり、前記ベアチップの対向する2辺それぞれに該辺に沿って前記電極パッドが形成されてもよい。   The bare chip may have a substantially rectangular shape, and the electrode pad may be formed along each of two opposing sides of the bare chip.

前記ベアチップはほぼ矩形であり、前記ベアチップの4辺それぞれに該辺に沿った外周部に前記電極パッドが形成されてもよい。   The bare chip may be substantially rectangular, and the electrode pad may be formed on an outer peripheral portion along each of the four sides of the bare chip.

前記受光部又は発光部は、前記ベアチップの実質的な中心領域に形成されてもよい。   The light receiving unit or the light emitting unit may be formed in a substantially central region of the bare chip.

上記目的を達成するため、本発明の第2の観点に係る光学半導体装置の製造方法は、
半導体素子の受光部又は発光部と電極パッドとが形成されたベアチップの、前記受光部又は発光部上に被覆部材を形成する被覆部材形成工程と、
前記ベアチップを、基板上に搭載する搭載工程と、
前記ベアチップ上に形成された前記電極パッドと前記基板上に形成された電極端子とを導電部材で電気的に接続する接続工程と、
少なくとも前記電極パッド及び前記導電部材が、不透光性の樹脂で覆われるように前記不透光性の樹脂を塗布する塗布工程と、
前記ベアチップの前記受光部又は発光部上に形成された被覆部材を除去する被覆部材除去工程と、有し、
前記塗布工程では、前記ベアチップの前記受光部又は発光部に挑むように前記樹脂を塗布することを特徴とする。
In order to achieve the above object, a method of manufacturing an optical semiconductor device according to the second aspect of the present invention includes:
A covering member forming step of forming a covering member on the light receiving portion or the light emitting portion of the bare chip in which the light receiving portion or the light emitting portion and the electrode pad of the semiconductor element are formed;
A mounting step of mounting the bare chip on a substrate;
A connection step of electrically connecting the electrode pad formed on the bare chip and the electrode terminal formed on the substrate with a conductive member;
An application step of applying the light-impermeable resin so that at least the electrode pad and the conductive member are covered with the light-impermeable resin;
A covering member removing step for removing the covering member formed on the light receiving portion or the light emitting portion of the bare chip;
In the application step, the resin is applied so as to challenge the light receiving portion or the light emitting portion of the bare chip.

前記搭載工程では、複数の前記ベアチップを前記基板上にマトリックス状に搭載し、
前記基板を切断し、複数の前記光学半導体装置を得る切断工程を更に備えてもよい。
In the mounting step, a plurality of the bare chips are mounted in a matrix on the substrate,
A cutting step of cutting the substrate to obtain a plurality of the optical semiconductor devices may be further provided.

前記搭載工程では、予め前記光学半導体装置ごとに切断された前記基板上に、前記ベアチップを搭載してもよい。   In the mounting step, the bare chip may be mounted on the substrate previously cut for each optical semiconductor device.

前記ベアチップはほぼ矩形であり、前記ベアチップの対向する2辺それぞれに該辺に沿って前記電極パッドが形成されてもよい。   The bare chip may have a substantially rectangular shape, and the electrode pad may be formed along each of two opposing sides of the bare chip.

前記ベアチップはほぼ矩形であり、前記ベアチップの4辺それぞれに該辺に沿った外周部に前記電極パッドが形成されてもよい。   The bare chip may be substantially rectangular, and the electrode pad may be formed on an outer peripheral portion along each of the four sides of the bare chip.

前記塗布工程では、前記ベアチップの外周に沿って前記樹脂を塗布してもよい。   In the application step, the resin may be applied along the outer periphery of the bare chip.

本発明によれば、ベアチップの受光部又は発光部上に被覆部材を形成した上で封止樹脂を塗布することにより、良好な動作性を備える光学半導体装置とその製造方法を提供することができる。   According to the present invention, an optical semiconductor device having good operability and a method for manufacturing the same can be provided by forming a covering member on a light receiving portion or a light emitting portion of a bare chip and then applying a sealing resin. .

以下、本発明の実施の形態に係る光学半導体装置及びその製造方法について図面を用いて詳細に説明する。   Hereinafter, an optical semiconductor device and a manufacturing method thereof according to embodiments of the present invention will be described in detail with reference to the drawings.

図1は、本発明の実施の形態に係る光学半導体装置10の構成を示す図である。図1(a)は、光学半導体装置10の平面図であり、図1(b)は、図1(a)に示す光学半導体装置10のA−A線断面図である。光学半導体装置10は、半導体素子が形成されたベアチップ11を基板12に搭載した装置である。   FIG. 1 is a diagram showing a configuration of an optical semiconductor device 10 according to an embodiment of the present invention. FIG. 1A is a plan view of the optical semiconductor device 10, and FIG. 1B is a cross-sectional view taken along line AA of the optical semiconductor device 10 shown in FIG. The optical semiconductor device 10 is a device in which a bare chip 11 on which a semiconductor element is formed is mounted on a substrate 12.

光学半導体装置10は、図1(a)及び(b)に示すように、ベアチップ11と、基板12と、ダイパッド13と、電極端子14と、ワイヤ15と、樹脂16と、を備える。ベアチップ11は、受光部21と、電極パッド22と、信号処理回路部23と、を備える。   As shown in FIGS. 1A and 1B, the optical semiconductor device 10 includes a bare chip 11, a substrate 12, a die pad 13, an electrode terminal 14, a wire 15, and a resin 16. The bare chip 11 includes a light receiving unit 21, an electrode pad 22, and a signal processing circuit unit 23.

ベアチップ11は、例えばフォトダイオード等の光学半導体素子を備え、光学半導体素子の受光部(又は発光部)21を一主面に備える。受光部21は、図1に示すようにベアチップ11のほぼ中央の領域に形成される。ベアチップ11の外形は矩形に形成されており、基板12上に設けられたダイパッド13上に搭載される。ベアチップ11は、受光部21を除き、樹脂16で覆われている。また、ベアチップ11の上面の各辺に沿った外周部には、電極パッド22が形成されている。電極パッド22は、基板12上に形成された電極端子14と、ワイヤ15を介して電気的に接続される。信号処理回路部23は、図1(b)に示すように、受光部21と電極パッド22との間に形成される。   The bare chip 11 includes an optical semiconductor element such as a photodiode, for example, and includes a light receiving portion (or light emitting portion) 21 of the optical semiconductor element on one main surface. As shown in FIG. 1, the light receiving portion 21 is formed in a substantially central region of the bare chip 11. The bare chip 11 has a rectangular outer shape and is mounted on a die pad 13 provided on the substrate 12. The bare chip 11 is covered with the resin 16 except for the light receiving portion 21. In addition, electrode pads 22 are formed on the outer peripheral portion along each side of the upper surface of the bare chip 11. The electrode pad 22 is electrically connected to the electrode terminal 14 formed on the substrate 12 via the wire 15. The signal processing circuit unit 23 is formed between the light receiving unit 21 and the electrode pad 22 as shown in FIG.

基板12は、例えば矩形に形成される。基板12は、例えばガラスエポキシ樹脂板やポリイミドフィルム等の可撓性基板等からなる。基板12の中央の領域にはダイパッド13が形成されており、基板12の外縁近傍には、外部との接続を可能とする複数の電極端子14が、基板12の各辺に沿って形成されている。   The substrate 12 is formed in a rectangular shape, for example. The substrate 12 is made of, for example, a flexible substrate such as a glass epoxy resin plate or a polyimide film. A die pad 13 is formed in the central region of the substrate 12, and a plurality of electrode terminals 14 that can be connected to the outside are formed along each side of the substrate 12 in the vicinity of the outer edge of the substrate 12. Yes.

樹脂16は、ベアチップ11の4辺に形成された電極パッド22と、ワイヤ15と、電極端子14の一部とを覆うように形成され、さらに受光部21に挑むように形成される。樹脂16は、電極パッド22、信号処理回路部23等に光が照射されるのを良好に防ぐため不透光性の樹脂から形成され、例えば黒色のエポキシ樹脂等から形成される。樹脂16によって電極パッド22と、ワイヤ15とが被覆されることによって、電極パッド22、ワイヤ15等は、埃、水分等の外部環境から保護される。更に、樹脂16は信号処理回路23上部を覆い、不透光性であるため光の照射による誤作動等を防ぐことができ、光学半導体装置10は良好に動作することが可能となる。
なお、上記実施例では、ベアチップ11の4辺全てに電極パッド22が形成されていたが、電極パッド22はベアチップ11の対向する2辺についてのみ、形成されていてもよい。
The resin 16 is formed so as to cover the electrode pads 22 formed on the four sides of the bare chip 11, the wires 15, and a part of the electrode terminals 14, and is formed so as to challenge the light receiving unit 21. The resin 16 is made of a light-impermeable resin in order to satisfactorily prevent the electrode pad 22, the signal processing circuit unit 23, etc. from being irradiated with light, and is made of, for example, black epoxy resin. By covering the electrode pad 22 and the wire 15 with the resin 16, the electrode pad 22, the wire 15 and the like are protected from the external environment such as dust and moisture. Furthermore, since the resin 16 covers the upper part of the signal processing circuit 23 and is opaque, it can prevent malfunction due to light irradiation, and the optical semiconductor device 10 can operate satisfactorily.
In the above-described embodiment, the electrode pads 22 are formed on all four sides of the bare chip 11. However, the electrode pads 22 may be formed only on two opposite sides of the bare chip 11.

上述したように、本実施の形態の光学半導体装置10は、不透光性の樹脂によって、ワイヤ15と、電極パッド22と、信号処理回路23と、電極端子14の一部が覆われるため、埃、水分等を含む外部環境からこれらを保護することができ、また、光の照射による誤作動を防ぐことができる。従って、光学半導体装置10は良好な動作性を備える。   As described above, in the optical semiconductor device 10 of the present embodiment, the wire 15, the electrode pad 22, the signal processing circuit 23, and a part of the electrode terminal 14 are covered with the opaque resin. These can be protected from the external environment including dust, moisture, etc., and malfunction due to light irradiation can be prevented. Therefore, the optical semiconductor device 10 has good operability.

次に、この光学半導体装置10の製造方法を図を用いて説明する。
図2〜図4は、光学半導体装置10の製造方法を説明する図である。
Next, a method for manufacturing the optical semiconductor device 10 will be described with reference to the drawings.
2 to 4 are diagrams for explaining a method of manufacturing the optical semiconductor device 10.

まず、シリコン等の半導体ウェハW上に所定の方法で図2(a)に示すように受光部21、電極パッド22、信号処理回路23等を形成する。なお、この段階では、受光部21、電極パッド22、信号処理回路23等は、複数個がマトリクス状に並んで形成されている。また、受光部21はベアチップ11の実質的な中心領域に形成すると後述する樹脂16を塗布する工程が容易となるため好ましい。   First, as shown in FIG. 2A, a light receiving portion 21, an electrode pad 22, a signal processing circuit 23, and the like are formed on a semiconductor wafer W such as silicon by a predetermined method. At this stage, a plurality of light receiving portions 21, electrode pads 22, signal processing circuits 23, and the like are formed in a matrix. Further, it is preferable that the light receiving portion 21 is formed in a substantially central region of the bare chip 11 because a process of applying a resin 16 described later becomes easy.

次に、受光部21が露出するように複数の開口部51aを備えるメタルマスク(スクリーン印刷版)51を、半導体ウェハW上に位置決め配置する。開口部51aは、受光部21と重なるようにしてほぼ同じ形状に形成される。   Next, a metal mask (screen printing plate) 51 having a plurality of openings 51 a is positioned on the semiconductor wafer W so that the light receiving unit 21 is exposed. The opening 51a is formed in substantially the same shape so as to overlap the light receiving unit 21.

次に、図2(c)に示すように受光部21を覆うように、メタルマスク51に設けられた開口部51aにフォトレジスト、水溶性の樹脂等が充填されるよう、メタルマスク51上をスキージを水平移動させる。その後、フォトレジストや水溶性樹脂等を紫外線や加熱により硬化して被覆部材52を形成する。続いて、メタルマスク51を取り外し、被覆部材52のみを受光部21上に残す。更に、ダイシングラインに沿って、ウエハを切断し、複数個のベアチップ11を得る。   Next, as shown in FIG. 2C, the top of the metal mask 51 is covered so that the opening 51a provided in the metal mask 51 is filled with a photoresist, a water-soluble resin, or the like so as to cover the light receiving portion 21. Move the squeegee horizontally. Thereafter, the covering member 52 is formed by curing a photoresist, a water-soluble resin, or the like by ultraviolet rays or heating. Subsequently, the metal mask 51 is removed, and only the covering member 52 is left on the light receiving unit 21. Further, the wafer is cut along the dicing line to obtain a plurality of bare chips 11.

続いて、図2(d)に示すように、電極端子14が設けられた基板12に、受光部21上に被覆部材52が形成されたベアチップ11を搭載する。ベアチップ11が搭載されるダイパット13部分には、予め接着用ペースト材が塗布されている。この接着用ペースト材上にベアチップ11を搭載し、基板12ごと加熱炉内に入れ、接着用ペースト材を熱硬化させてベアチップ11を基板12に固定する。なお、複数の光学半導体装置を製造するために、当初の基板12には、1つの光学半導体装置を構成するためのダイパッド13及び複数の電極端子14のパターンが、マトリクス状に複数組形成されている。   Subsequently, as shown in FIG. 2D, the bare chip 11 in which the covering member 52 is formed on the light receiving unit 21 is mounted on the substrate 12 on which the electrode terminals 14 are provided. An adhesive paste material is applied in advance to the die pad 13 where the bare chip 11 is mounted. The bare chip 11 is mounted on the adhesive paste material, and the substrate 12 is placed in a heating furnace, and the adhesive paste material is thermally cured to fix the bare chip 11 to the substrate 12. In order to manufacture a plurality of optical semiconductor devices, a plurality of sets of patterns of die pads 13 and a plurality of electrode terminals 14 for forming one optical semiconductor device are formed in a matrix on the initial substrate 12. Yes.

次に、図2(d)に示すようにワイヤボンダを用いてベアチップ11の表面の外周部に形成された電極パッド22と、基板12上に形成された電極端子14と、をワイヤ15で電気的に接続する。   Next, as shown in FIG. 2D, the electrode pad 22 formed on the outer peripheral portion of the surface of the bare chip 11 and the electrode terminal 14 formed on the substrate 12 are electrically connected by the wire 15 using a wire bonder. Connect to.

続いて、図3(e)に示すように、ベアチップ11に形成された電極パッド22と、ワイヤ15と、ワイヤ15の周辺部分に樹脂16を塗布して覆う。樹脂16として、不透光性の樹脂、例えば熱硬化性の黒色エポキシ樹脂等を用いる。この塗布工程では、基板12をX,Yの2方向に移動可能なXYステージ(図示略)に乗せ、ディスペンサに装着されたシリンダから充填された樹脂16を押し出すと同時に、シリンダ先端とXYステージが相対的に所定距離だけX方向に移動するように、シリンダおよび/またはXYステージを動かし、ベアチップ11の一辺について電極パッド13とワイヤ15とワイヤ15の周辺部分とを樹脂16で覆う。ベアチップ11の一辺について樹脂16が塗布された後は、樹脂16が塗布されたベアチップ11の一辺に直交する辺につき、連続して樹脂16を塗布する。この作業をベアチップ11の4辺について行い、ベアチップ11の周辺に樹脂16を塗布する。続いて、隣接するベアチップ11の上及び周辺にも同様に樹脂16を塗布する。なお、樹脂16を塗布する際、シリンダは1本ではなく、複数本を使用してもよい。   Subsequently, as shown in FIG. 3E, a resin 16 is applied and covered on the electrode pads 22 formed on the bare chip 11, the wires 15, and the peripheral portions of the wires 15. As the resin 16, an opaque resin, for example, a thermosetting black epoxy resin or the like is used. In this coating process, the substrate 12 is placed on an XY stage (not shown) that can move in two directions of X and Y, and the resin 16 filled from the cylinder mounted on the dispenser is pushed out. The cylinder and / or the XY stage is moved so as to move relatively in the X direction by a predetermined distance, and the electrode pad 13, the wire 15, and the peripheral portion of the wire 15 are covered with the resin 16 on one side of the bare chip 11. After the resin 16 is applied to one side of the bare chip 11, the resin 16 is continuously applied to a side orthogonal to the one side of the bare chip 11 to which the resin 16 is applied. This operation is performed on the four sides of the bare chip 11 and the resin 16 is applied around the bare chip 11. Subsequently, the resin 16 is similarly applied on and around the adjacent bare chip 11. In addition, when apply | coating the resin 16, you may use multiple cylinders instead of one.

上述したように、本実施の形態ではベアチップ11の外周に沿って樹脂16を塗布する。このため、樹脂16が良好にワイヤ15等を覆うよう、樹脂16の粘度、ベアチップ11の一辺に塗布する樹脂16の量、塗布する時間等を適宜調節する。なお、ベアチップ11の中心領域に受光部21が形成されると、各辺に塗布する樹脂16の量、時間等の調節が容易となるため好ましい。   As described above, in this embodiment, the resin 16 is applied along the outer periphery of the bare chip 11. For this reason, the viscosity of the resin 16, the amount of the resin 16 applied to one side of the bare chip 11, the application time, and the like are adjusted as appropriate so that the resin 16 covers the wire 15 and the like satisfactorily. In addition, it is preferable that the light receiving portion 21 is formed in the center region of the bare chip 11 because it is easy to adjust the amount, time, and the like of the resin 16 applied to each side.

次に各ベアチップ11の全ての辺について樹脂16の塗布が終了した基板12を加熱炉内入れ、塗布した樹脂16を熱硬化させる。   Next, the substrate 12 on which all the sides of each bare chip 11 have been applied with the resin 16 is placed in a heating furnace, and the applied resin 16 is thermally cured.

次に、被覆部材52を除去し、図3(f)に示すように受光部21を露出させる。   Next, the covering member 52 is removed, and the light receiving unit 21 is exposed as shown in FIG.

次に、ダイシング工程では、ダイシングカッターを用いて図4(g)に示すダイシングラインdに沿ってベアチップ11を搭載した基板12を所定の位置で切断し、図4(h)に示すようにベアチップ11単位で光学半導体装置10を分離する。
以上の工程から光学半導体装置10が製造される。
Next, in the dicing process, the substrate 12 on which the bare chip 11 is mounted is cut at a predetermined position along the dicing line d shown in FIG. 4G by using a dicing cutter, and the bare chip as shown in FIG. The optical semiconductor device 10 is separated by 11 units.
The optical semiconductor device 10 is manufactured from the above steps.

なお、上述した実施の形態では、被覆部材52を除去してから基板12を切断する構成を例に挙げたが、基板12の切断後に被覆部材52を除去することも可能である。ダイシング工程後に被覆部材52を除去することによって、ダイシング工程で発生する切削くず等から受光部21を保護することができる。   In the above-described embodiment, the configuration in which the substrate 12 is cut after removing the covering member 52 has been described as an example. However, the covering member 52 can be removed after the substrate 12 is cut. By removing the covering member 52 after the dicing process, it is possible to protect the light receiving unit 21 from cutting waste generated in the dicing process.

また、複数のベアチップを単一の基板に搭載した後に切断するのではなく、あらかじめ所定の形状に形成された基板12上に、被覆部材52を設けたベアチップ11を搭載後、ワイヤボンディング、不透光樹脂16の塗布および被覆部材52の除去工程を行うようにしてもよい。 Rather than mounting a plurality of bare chips on a single substrate and then cutting, a bare chip 11 provided with a covering member 52 is mounted on a substrate 12 formed in advance in a predetermined shape, followed by wire bonding and impermeability. You may make it perform the application | coating of the optical resin 16, and the removal process of the coating | coated member 52. FIG.

本実施の形態の光学半導体装置の製造方法によれば、受光面上に被覆部材を形成した上で不透光性の樹脂を用いて封止することによって、従来必要とされた樹脂封止の工程と、遮光膜を形成する工程とを省略することができるため工程が簡易になり、生産効率が高くなる。また、金型等が不要であるため、コストダウンを図ることができる。また、被覆部材を用いてその上から樹脂を塗布することによって、受光部に挑むように樹脂を塗布することができ、電極パッド等の金属部材を外部環境から良好に保護することができる。   According to the method for manufacturing an optical semiconductor device of the present embodiment, a resin-encapsulated resin that has been conventionally required can be obtained by forming a covering member on the light receiving surface and then sealing it with a light-impermeable resin. Since the process and the process of forming the light shielding film can be omitted, the process is simplified and the production efficiency is increased. In addition, since a mold or the like is unnecessary, cost reduction can be achieved. Further, by applying the resin from above using the covering member, the resin can be applied so as to challenge the light receiving portion, and the metal member such as the electrode pad can be well protected from the external environment.

(a)は、本発明の実施の形態に係る光学半導体装置の平面図であり、(b)は、図1(a)に示すA−A線断面図である。(A) is a top view of the optical semiconductor device which concerns on embodiment of this invention, (b) is the sectional view on the AA line shown to Fig.1 (a). 本発明の実施の形態に係る光学半導体装置の製造工程を説明する図である。It is a figure explaining the manufacturing process of the optical semiconductor device which concerns on embodiment of this invention. 本発明の実施の形態に係る光学半導体装置の製造工程を説明する図である。It is a figure explaining the manufacturing process of the optical semiconductor device which concerns on embodiment of this invention. 本発明の実施の形態に係る光学半導体装置の製造工程を説明する図である。It is a figure explaining the manufacturing process of the optical semiconductor device which concerns on embodiment of this invention. 従来の光学半導体装置を示す図である。It is a figure which shows the conventional optical semiconductor device.

符号の説明Explanation of symbols

10 光学半導体装置
11 ベアチップ
12 基板
13 ダイパッド
14 電極端子
15 ワイヤ
16 樹脂
21 受光部
22 電極パッド
23 信号処理回路部
DESCRIPTION OF SYMBOLS 10 Optical semiconductor device 11 Bare chip 12 Board | substrate 13 Die pad 14 Electrode terminal 15 Wire 16 Resin 21 Light-receiving part 22 Electrode pad 23 Signal processing circuit part

Claims (10)

電極端子が形成された基板と、
前記基板上に搭載され、電極パッドと、受光部又は発光部を有する半導体素子と、を備えるベアチップと、
前記電極端子と前記電極パッドとを電気的に接続する導電部材と、を備え、
少なくとも前記導電部材と前記電極パッドとを覆い、且つ前記ベアチップの前記受光部又は発光部に挑むように形成された不透光性の樹脂を、更に備えることを特徴とする光学半導体装置。
A substrate on which electrode terminals are formed;
A bare chip mounted on the substrate and comprising an electrode pad and a semiconductor element having a light receiving portion or a light emitting portion;
A conductive member that electrically connects the electrode terminal and the electrode pad;
An optical semiconductor device further comprising an opaque resin that covers at least the conductive member and the electrode pad and is formed to challenge the light receiving portion or the light emitting portion of the bare chip.
前記ベアチップはほぼ矩形であり、前記ベアチップの対向する2辺それぞれに該辺に沿って前記電極パッドが形成されることを特徴とする請求項1に記載の光学半導体装置。   2. The optical semiconductor device according to claim 1, wherein the bare chip is substantially rectangular, and the electrode pads are formed along each of two opposing sides of the bare chip. 前記ベアチップはほぼ矩形であり、前記ベアチップの4辺それぞれに該辺に沿った外周部に前記電極パッドが形成されることを特徴とする請求項1に記載の光学半導体装置。   2. The optical semiconductor device according to claim 1, wherein the bare chip is substantially rectangular, and the electrode pads are formed on an outer peripheral portion along the four sides of the bare chip. 前記受光部又は発光部は、前記ベアチップの実質的な中心領域に形成されることを特徴とする請求項1乃至3のいずれか1項に記載の光学半導体装置。   4. The optical semiconductor device according to claim 1, wherein the light receiving portion or the light emitting portion is formed in a substantially central region of the bare chip. 半導体素子の受光部又は発光部と電極パッドとが形成されたベアチップの、前記受光部又は発光部上に被覆部材を形成する被覆部材形成工程と、
前記ベアチップを、基板上に搭載する搭載工程と、
前記ベアチップ上に形成された前記電極パッドと前記基板上に形成された電極端子とを導電部材で電気的に接続する接続工程と、
少なくとも前記電極パッド及び前記導電部材が、不透光性の樹脂で覆われるように前記不透光性の樹脂を塗布する塗布工程と、
前記ベアチップの前記受光部又は発光部上に形成された被覆部材を除去する被覆部材除去工程と、有し、
前記塗布工程では、前記ベアチップの前記受光部又は発光部に挑むように前記樹脂を塗布することを特徴とする光学半導体装置の製造方法。
A covering member forming step of forming a covering member on the light receiving portion or the light emitting portion of the bare chip in which the light receiving portion or the light emitting portion and the electrode pad of the semiconductor element are formed;
A mounting step of mounting the bare chip on a substrate;
A connection step of electrically connecting the electrode pad formed on the bare chip and the electrode terminal formed on the substrate with a conductive member;
An application step of applying the light-impermeable resin so that at least the electrode pad and the conductive member are covered with the light-impermeable resin;
A covering member removing step for removing the covering member formed on the light receiving portion or the light emitting portion of the bare chip;
In the coating step, the resin is applied so as to challenge the light receiving portion or the light emitting portion of the bare chip.
前記搭載工程では、複数の前記ベアチップを前記基板上にマトリックス状に搭載し、
前記基板を切断し、複数の前記光学半導体装置を得る切断工程を更に備えることを特徴とする請求項5に記載の光学半導体装置の製造方法。
In the mounting step, a plurality of the bare chips are mounted in a matrix on the substrate,
6. The method of manufacturing an optical semiconductor device according to claim 5, further comprising a cutting step of cutting the substrate to obtain a plurality of the optical semiconductor devices.
前記搭載工程では、予め前記光学半導体装置ごとに切断された前記基板上に、前記ベアチップを搭載することを特徴とする請求項5に記載の光学半導体装置の製造方法。   6. The method of manufacturing an optical semiconductor device according to claim 5, wherein, in the mounting step, the bare chip is mounted on the substrate that has been cut for each of the optical semiconductor devices in advance. 前記ベアチップはほぼ矩形であり、前記ベアチップの対向する2辺それぞれに該辺に沿って前記電極パッドが形成されることを特徴とする請求項5乃至7のいずれか1項に記載の光学半導体装置の製造方法。   8. The optical semiconductor device according to claim 5, wherein the bare chip has a substantially rectangular shape, and the electrode pad is formed along each of two opposing sides of the bare chip. 9. Manufacturing method. 前記ベアチップはほぼ矩形であり、前記ベアチップの4辺それぞれに該辺に沿った外周部に前記電極パッドが形成されることを特徴とする請求項5乃至7のいずれか1項に記載の光学半導体装置の製造方法。   8. The optical semiconductor according to claim 5, wherein the bare chip is substantially rectangular, and the electrode pads are formed on outer peripheral portions along the four sides of the bare chip, respectively. 9. Device manufacturing method. 前記塗布工程では、前記ベアチップの外周に沿って前記樹脂を塗布することを特徴とする請求項5乃至9のいずれか1項に記載の光学半導体装置の製造方法。   10. The method of manufacturing an optical semiconductor device according to claim 5, wherein, in the application step, the resin is applied along an outer periphery of the bare chip. 11.
JP2005343539A 2005-11-29 2005-11-29 Optical semiconductor device and method for fabrication thereof Withdrawn JP2007150038A (en)

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