JP2006261700A - Low-pressure cvd apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a low-pressure CVD that can be used both as a low-pressure CVD and low-pressure plasma CVD capable of making the quality and thickness of an evaporated film uniform, preventing particles, diversifying the film quality, preventing the breakage of the components, and being advantageous for automation. <P>SOLUTION: This apparatus is equipped with a depositing machine base, reactor installed in the depositing machine base having a reactor region in its inside, substrate moving up and down inside the reactor where a wafer is installed, compound source gas injector for pouring in compound source gas into the reactor, substrate heating means arranged inside the substrate that heats the wafer, and reactor heating means that heats the reactor. The foregoing substrate consists of a substrate main unit having an installation section to install the remaining part other than part of arc portions on both side of the wafer, and wafer holder having an auxiliary installation section, where the arc portions on both side of the wafer not installed in the foregoing installation section are installed, which is installed to be movable up and down on the upper surface of the substrate main unit and formed so as to conform with the contour of the installation section. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a low pressure chemical vapor deposition apparatus. Specifically, the film quality and thickness are made uniform, particles are prevented, the film quality is diversified, parts are prevented from being damaged, and it is advantageous for automation. The present invention relates to a low pressure chemical vapor deposition apparatus that can be used as a low pressure chemical vapor deposition apparatus.

Generally, in semiconductor manufacturing processes, low pressure chemical vapor deposition is used to deposit a compound thin film such as a nitride film, oxide film, or silicon film having properties such as an insulator, dielectric or conductor on a wafer. The method is used.
Vapor deposition equipment used in low pressure chemical vapor deposition is a system in which a compound source gas flowing into the reactor is reacted in a low temperature, low pressure atmosphere to deposit a compound thin film on the wafer. Each wafer is loaded one by one. The single-wafer low-pressure chemical vapor deposition system that deposits while performing the process and the bell-shaped low-pressure chemical vapor deposition system that deposits multiple wafers loaded simultaneously are used, and the single-wafer low-pressure chemical vapor deposition system is easy to automate. It is widely used with the advantage of not requiring a large area.

Hereinafter, among the conventional low pressure chemical vapor deposition apparatuses, a single wafer type low pressure chemical vapor deposition apparatus will be described based on an example shown in the accompanying drawings.
FIG. 16 shows an example of a conventional single-wafer type low pressure chemical vapor deposition apparatus, in which a wafer inlet / outlet port 11a through which a wafer W is taken in / out is formed on one side, and an exhaust port 11b for discharging a reaction product is formed on the other side. A vaporizer base 11 whose lower end is opened and closed by an opening / closing plate 11c, a reaction furnace 12 mounted on the vapor deposition apparatus base 11 to form a reaction space S, and a compound installed at the upper end of the reaction furnace 12 A source gas injector 13 and a substrate 14 moved up and down in the reaction space S by a lifting ram 15 penetrating the opening / closing plate 11c.

In such a conventional single-wafer type low pressure chemical vapor deposition apparatus, the wafer W is caused to enter through the wafer entrance / exit 11a while the substrate 14 is lowered to the loading / unloading position which is lower than the wafer entrance / exit 11a by the elevating ram 15. After being placed on the substrate 14, the substrate 14 is raised by the lifting ram 15 to be positioned at the vapor deposition position, the substrate heating means 16 installed on the substrate 14 is operated, and the wafer W loaded on the substrate 14 is loaded. When the compound source gas is injected into the reaction furnace 12 by the compound source gas injector 13 while being heated, the compound source gas reacts and is deposited on the wafer W as a compound thin film.
However, in such a conventional single-wafer type low pressure chemical vapor deposition apparatus, only the substrate 14 on which the wafer W is mounted is heated, and the reaction furnace 12 and its surroundings are not heated. As a result, pinholes are likely to occur in the thin film, resulting in inferior step coverage.

In the conventional apparatus, the compound source gas injector 13 is composed of an injection pipe 13a penetrating the upper surface of the reaction furnace 12, and a shower head 13b connected to the lower end of the injection pipe 13a and having a plurality of shower holes. However, there is a problem that the compound thin film is not uniformly deposited over the entire surface of the wafer because sufficient mixing cannot be achieved by simply injecting the compound source gas.
In addition, in order to compensate for the problems of the conventional low pressure chemical vapor deposition system as described above, the compound source gas is ionized by generating a plasma by connecting a plasma generator to the substrate and the electrode installed on the reactor side. A plasma enhanced low pressure chemical vapor deposition (Plasma Enhanced Low Pressure Chemical Vapor Deposition) apparatus is used to promote the reaction.

  As shown in FIG. 17, in the conventional plasma low pressure chemical vapor deposition apparatus, a wafer inlet / outlet 21a is formed on one side, an outlet 21b is formed on the other side, and a lower end is opened / closed by an opening / closing plate 21c. A reaction furnace 22 provided on the upper side of the vaporizer base 21, a compound source gas injector 23 installed on the upper surface of the reaction furnace 22, and a lifting ram 25 that goes up and down through the opening / closing plate 21c. A substrate 24 installed in the reaction furnace 22 so as to be movable up and down, on which a wafer W is mounted, a heating means 26 installed on the substrate 24, and electrodes 27a and 27b connected to the reaction furnace 22 and the substrate 24, respectively. And a plasma generator 27 connected to the.

  In such a conventional plasma low pressure chemical vapor deposition apparatus, the elevating ram 25 that goes up and down through the opening / closing plate 21c is lowered, and the substrate 24 fixed to the upper end thereof is lowered to a loading / unloading position lower than the entrance / exit 21a. After that, the wafer W is inserted through the entrance / exit 21a and mounted on the substrate 24, the lifting ram 25 is raised to raise the substrate 24 on which the wafer W is mounted to the deposition position, and the substrate heating means 26 is operated. While heating the substrate and the wafer W mounted thereon, and injecting the compound source gas through the compound source gas injector 23, the electrodes 27a and 27b are connected to the upper portions of the reaction loading 22 and the electrodes 27a and 27b connected to the substrate 24. When the plasma generator 27 connected to is operated to generate plasma in the reaction loading 22, Object source gas is intended to be deposited as a compound thin film on the wafer W with ionized.

Such a conventional plasma low pressure chemical vapor deposition method has an advantage of minimizing changes in device characteristics due to the deposition temperature because the process temperature can be lowered by generating plasma and ionizing the compound source gas.
However, in the conventional plasma low pressure chemical vapor deposition method, only the substrate 24 on which the wafer W is mounted is heated and the reaction furnace 22 and its surroundings are not heated. Therefore, the compound source gas to be injected is not sufficiently preheated. This is supplied into the reaction space S, and there is a problem that the thermal effect is low, pinholes are easily generated in the thin film due to the low thermal effect, and the step coverage is inferior.

In the conventional low pressure chemical vapor deposition apparatus or plasma low pressure chemical vapor deposition apparatus described above, the compound source gas injector 23 is connected to the upper portion of the reaction furnace 22 and the lower end of the injection tube 23a. Of the wafer W loaded on the substrate 24 due to insufficient preheating and mixing of the injected compound source gas. Is not uniform, there is a problem that the uniformity of the compound thin film is lowered.
Further, in the conventional low pressure chemical vapor deposition apparatus and plasma low pressure chemical vapor deposition apparatus, the wafer W placed on the substrate is exposed immediately below the shower head, so that the contact condition of the wafer with the compound source gas is entirely over. It is not uniform and becomes a factor that hinders homogeneity of film quality and thickness.

In addition, since the conventional apparatus discharges the gas such as the reaction product only through the exhaust pipe, the gas staying in the reaction furnace is not discharged quickly and smoothly, and the film quality of the residual gas is reduced. There was a problem that caused a decline.
In the conventional low pressure chemical vapor deposition apparatus or plasma low pressure chemical vapor deposition apparatus, the substrates 14 and 24 are simply fixed to the upper ends of the elevating rams 15 and 25 as shown in FIGS. Since the substrate loading / unloading position is determined only by the lifting ram, the loading / unloading position is not accurately maintained, and the wafer loading / unloading is performed by the robot. There was a problem that hindered the automation that included.

  Further, as shown in FIG. 18, the substrates 14 and 24 used in the conventional low-pressure chemical vapor deposition apparatus and plasma low-pressure chemical vapor deposition apparatus have a wafer W on the upper surface of the substrate bodies 14a and 24a in which the substrate heating means is incorporated. Wafer resting portions 14b and 24b on which the wafer W is placed are formed higher than the main bodies 14a and 24a. Wafer support protrusions 14c and 24c are formed around the resting portions 14b and 24b, and the wafer W is supported on the support protrusions 14c and 24c. It is made to contact | adhere to the inner rest parts 14b and 24b.

  By the way, the wafer W is usually disk-shaped, and a flat zone F is formed on one side thereof. During loading, both sides of the wafer W are placed on the robot arm A and the substrate 14 through the wafer entrances 11a and 21a. 24. Since the robot arm A has a fork shape and is loaded with the wafer W placed thereon, the wafer arm 14b, 24b cannot be helped to avoid interference between the robot arm A and the wafer arm 14b, 24b. Are cut into straight portions 14d and 24d so that the width between the straight portions 14d and 24d is slightly smaller than the inner width of the robot arm A.

  In such a conventional substrate structure, when the robot arm A is moved to a position vertically aligned with the wafer resting portions 14b and 24b with the wafer W placed on the robot arm A, the robot arm A is lowered. Since the robot arm A descends outside the linear portions 14d and 24d on both sides of the wafer rests 14b and 24b, there is no interference between the robot arm A and the wafer rests 14b and 24b, and the wafer W has the wafer rest 14b, It is placed in a state where it is inserted into the wafer support ridges 14c, 24c formed at the edge of 24b. When unloading, the operation is reversed.

  However, in such a conventional substrate structure, when the wafer W is placed on the wafer resting portions 14b and 24b, as shown in FIG. 18, both side portions of the wafer W are both straight portions 14d on both sides of the wafer resting portions 14b and 24b. 24d is not attached to the wafer rests 14b and 24b, so that the heat of the substrate heating means built in the substrate bodies 14a and 24a is not uniformly transmitted to the entire wafer W and is brought into close contact with the wafer rests 14b and 24b. In addition to the smooth deposition on both sides of the wafer W, the compound source gas contacted the bottom of the wafer W while the both sides of the wafer floated, and the bottom was deposited. .

  Conventionally, in order to solve such problems of the substrate structure, as shown in FIGS. 19A and 19B, as shown in FIGS. 19A and 19B, a plurality of (usually three) 19), the wafer lift pins 17 and 28 are raised, and the wafer W placed on the robot arm A is placed on the wafer lift pins 17 and 28 as shown in FIG. As shown in FIG. 19B, by moving the elevating pins 17 and 28 downward, the wafer W is removed from the wafer without forming straight portions on both sides of the wafer rest portions 14b and 24b formed on the upper surfaces of the substrate bodies 14a and 24a. A device has been devised that can be placed in a state where the entire surface is in close contact with the resting portions 14b, 24b.

  However, in this case, when the wafer elevating pins 17 and 28 are installed, a gap is generated between the substrate bodies 14a and 24a and the wafer elevating pins 17 and 28, and the compound source gas enters the gap, and particles are generated in this portion. In addition, since the substrate heating means and electrodes are installed inside the substrate bodies 14a and 24a, there are structural difficulties in installing the wafer lifting pins 17 and 28, and the compound source gas that has entered the gap Affects the substrate heating means, and heat loss occurs through the gap. The wafer lifting pins 17 and 28 are usually made of SUS or quartz and have a diameter of about 1 to 1 mm. 28 itself is easily damaged, and when it is damaged, there is a problem that repair becomes difficult.

Accordingly, an object of the present invention is to increase the thermal effect by heating the wafer placed on the substrate by the substrate heating means and heating the reaction furnace and its surroundings in the course of injecting the compound source gas. Another object of the present invention is to provide a low pressure chemical vapor deposition apparatus capable of improving the film quality of a deposited compound thin film and preventing particles.
Another object of the present invention is to improve the thermal effect and sufficiently mix the gas by passing through the gas preheating region, the gas mixing region and the reaction region in the process of injecting the compound source gas into the reaction furnace. Thus, the film quality is improved and the generation of particles is prevented.

Still another object of the present invention is to arrange an indirect heat transfer member in the outer shell of the reaction furnace, or to form the reaction furnace itself with a material having an indirect heat transfer function, so that heat generated from the reaction furnace heating means is generated in the reaction space. By making indirect heat transfer without direct radiation, the temperature distribution with respect to the reaction space and the wafer is made uniform as a whole to achieve uniform film quality and thickness.
Still another object of the present invention is to simplify the structure so that an indirect heat transfer electrode member arranged on the outer side of the reaction furnace or the reaction furnace itself also serves as the plasma electrode without separately installing a plasma electrode on the reaction furnace side. It is to be.

Still another object of the present invention is to save energy by using a heating jacket in which a heating medium is circulated without using a heat transfer heater as a reactor heating means.
Still another object of the present invention is to install a compound source gas dispersion plate on the upper part of a substrate on which a wafer is placed so that the height of the compound source gas dispersion plate can be adjusted. Thus, the film quality and thickness are more effectively achieved.

Still another object of the present invention is to discharge the gas remaining in the reaction furnace quickly and reliably by discharging the gas such as the reaction product only through the exhaust pipe, and to improve the film quality by the residual gas. It is to eliminate the decline.
Still another object of the present invention is to provide a uniform film quality and thickness so that the wafer is uniformly heated on the entire surface thereof by allowing the bottom surface of the wafer to be placed in close contact with the wafer rest portion of the substrate. Is more effective.
It is yet another object of the present invention to advantageously achieve automation by accurately maintaining the loading / unloading position of the wafer resting substrate.

  Such an object of the present invention is to provide a vapor deposition base, a reaction furnace placed in the vapor deposition base and having a reaction region therein, a substrate which is raised and lowered inside the reaction furnace, and a wafer is seated thereon, A compound source gas injector for injecting a compound source gas into the substrate, a substrate heating means for heating the wafer built in the substrate, and a reaction furnace heating means for heating the reaction furnace, and placed on the substrate. This is achieved by simultaneously heating the wafer and the reactor to an appropriate temperature to improve the thermal effect.

The reactor and the compound source gas injector have a structure in which the compound source gas to be injected is sufficiently preheated and mixed.
By installing an indirect heat transfer member between the reaction furnace and the reaction furnace heating means, or forming a tube or a shower head constituting the reaction furnace with a material having an indirect heat transfer function, the heat of the reaction furnace preheating means Has a structure that can reduce the direct heat transfer by radiation to the reactor as much as possible and heat the reactor by indirect heat transfer by conduction and convection to make the entire temperature distribution uniform and homogenize the film quality and thickness. Have.

By providing a plasma generating means in which a high frequency generator is connected to the substrate and the electrode member for indirect heat transfer or an element having an indirect heat transfer function, it can be applied to vapor deposition and etching by plasma.
The compound source gas injector includes a unit injection tube and injects one type of compound source gas, or an internal and external injection tube and injects two types of compound source gases to form various thin film films. It can be deposited.
When the substrate is lowered to the loading / unloading position by forming a positioning groove on the bottom surface and installing a positioning pin corresponding to the positioning groove on the opening / closing plate that opens and closes the lower end of the vapor deposition base. Positioning grooves and positioning pins can maintain an accurate position so that loading / unloading is accurate and is advantageous for automation.

By installing a compound source gas dispersion plate on the substrate, the compound source gas is uniformly contacted over the entire surface of the wafer, and a thin film having a uniform thickness and film quality can be obtained.
The substrate is configured such that a substrate main body having a rest portion on which a remaining portion excluding a part of the arc portions on both sides of the wafer is rested, and an upper surface of the substrate body can be moved up and down, and the outer shape of the rest portion is formed. The wafer is placed in a state in which the wafer is in close contact with the entire substrate, by forming a wafer holder having an auxiliary resting portion on which both side arc portions of the wafer off the resting portion are placed, Vapor deposition on the bottom surface of the wafer and generation of particles at this portion can be prevented, the thermal effect of the substrate heating means can be improved, and the film quality can be further improved.

  According to the low pressure chemical vapor deposition apparatus according to the present invention, the deposited film quality and thickness are uniform, particles are prevented, the film quality is diversified, parts are prevented from being damaged, and it is advantageous for automation. There is an effect that the plasma low-pressure chemical vapor deposition apparatus can also be used.

Hereinafter, a low-pressure chemical vapor deposition apparatus according to the present invention will be described in detail based on embodiments shown in the accompanying drawings.
FIG. 1 shows a first embodiment of a low pressure chemical vapor deposition apparatus according to the present invention.
As shown in FIG. 1, the low-pressure chemical vapor deposition apparatus according to the present embodiment is opened at the top and bottom, has a wafer inlet / outlet 111 for allowing the wafer W to enter and exit from one side of the peripheral wall, and discharges the reaction product to the other side. A vaporizer base 110 in which an exhaust port 112 is formed, a reaction furnace 120 placed in an upper part of the vaporizer base 10 and forming a reaction region R therein, and an upper end side of the reaction furnace 120. A compound source gas injector 130 for injecting a compound source gas into the reaction furnace 120, a loading / unloading position and a deposition position within the reaction furnace 120 can be moved up and down. A substrate 140 to be placed, a substrate heating means 150 for heating the wafer W placed on the substrate 140 and placed on the substrate, and an upper part of the reactor 120 are installed. Is composed from the reactor heating means 160. for heating the reaction furnace.

The vapor deposition base 110 is attached to a vapor deposition equipment frame (not shown), and an opening / closing plate 113 for opening and closing the inside of the vapor deposition base 110 at the lower end side is installed in a lower opening thereof so as to be movable up and down. Has been. The opening / closing ram 114 is installed through the opening / closing plate 113, and the substrate 140 is fixedly installed at the upper end of the lifting ram so that foreign substances may enter or gas may leak through the lifting ram 114. In order to prevent this, an elastic dust cover 115 is installed between the opening / closing plate 113 and the elevating ram 114.
The elevating ram 114 is installed such that it can be raised and lowered by a raising and lowering drive means (not shown) comprising a normal linear reciprocating mechanism.

In the illustrated example, the vapor deposition base 110 and the reaction space 120 are integrally formed, but this is not necessarily limited to this, and the vapor deposition base 110 and the reaction furnace 120 are separately manufactured and hermetically coupled. You can also.
The reaction furnace 120 uses a commonly used quartz tube, and its upper end is closed by a sealing member 121. The sealing member 121 has a primary function for blocking and sealing the inside of the reaction furnace 120 from the outside, and a quartz plate can be used, and a secondary function is that the heat of the reaction furnace heating means 160 is directly applied by radiation. An SiC plate can be used to transmit by indirect conduction and convection without being transmitted to the inside of the reactor 120.

  The compound source gas injector 130 includes an injection pipe 131 that communicates with the upper end of the reactor 120, a primary shower head 132 that is disposed at a predetermined interval below the sealing member 112, and a secondary shower. A gas preheating region H for preheating the compound source gas is formed between the sealing member 121 and the primary shower head 132, and the compound source gas is formed between the primary shower head 132 and the secondary shower head 133. Is formed, and a reaction region R in which the compound source gas reacts is formed below the secondary shower head 133.

The primary shower head 132 and the secondary shower head 133 are provided with shower holes 132 a and 133 a, and the shower holes 133 a of the secondary shower head 133 are smaller in size than the shower holes 132 a of the primary shower head 132. Perforated in many states.
The primary shower head 132 uses a quartz disk, and the secondary shower head 133 uses a conductive disk so that it can also serve as an electrode for generating plasma, and an SiC disk is used as an example. The

Here, when a SiC disk is used as the secondary shower head 133, the material is opaque, so that the heat of the reaction furnace heating means 160 is not directly transmitted to the reaction region R by radiation, but is conducted. And also has a function of indirect heat transfer by convection.
The substrate 140 is formed of a quartz plate, a carbon plate, or a SiC plate, and a space for receiving the substrate heating means 150 is secured inside.
A plurality (only two are shown) of position determination grooves 141 are formed on the bottom surface of the substrate 140, and position determination pins 142 corresponding to the position determination grooves 141 project from the opening / closing plate 113. Has been.

The position determination pin 142 is integrally formed with a support portion 142a fixed to the opening / closing plate 113 and an upper portion of the support portion 142a with a smaller diameter than the support portion 142a. The insertion portion 142b is inserted into the position determining groove 141, and a locking step 142c is formed between the insertion portion 142b and the bottom surface of the substrate 140 is applied thereto. The loading / unloading position is accurately determined. In addition, it is desirable that the position determination pin 142 is screwed to the opening / closing plate 113 so that the height of the locking step 142c can be adjusted.
The substrate heating means 150 is installed inside the substrate 140 and generally uses a heat transfer heater.

The reaction loading heating means 160 is disposed at the upper end of the reaction loading 120, and a general heat transfer heater or SiC heater is also used.
The plasma generating means 170 is for generating plasma between the reaction loading 120 and the substrate 140, that is, in the reaction region R. In the illustrated example, the high frequency voltage generated from the high frequency generator 171 is applied to the secondary shower. It is configured to apply to the head 133 and the substrate 140.
In the drawing, reference numeral 116 is a cooling water passage.

Hereinafter, the vapor deposition process and operation effects of the low pressure chemical vapor deposition apparatus according to the present embodiment will be described.
First, the elevating ram 114 is lowered and the substrate 140 fixed to the upper end thereof is lowered to the loading / unloading position, and then the pressure in the reaction furnace 120 is adjusted to an appropriate process pressure with a normal vacuum pump (not shown). In the maintained state, the wafer W is placed on the substrate 140 through the wafer entrance 111.
In a state where the substrate 140 is lowered to the loading / unloading position, the insertion portion 142b of the position determination pin 142 fixedly installed on the opening / closing plate 113 is inserted into the position determination groove 141 formed on the substrate 140 and the bottom surface of the substrate 140. Since the position of the substrate 140 is accurately maintained by engaging with the locking step 142c of the position determination pin 142, the wafer W can be placed at an accurate position in the process of placing the wafer W by a robot arm or the like.

With the wafer W resting on the substrate 140, the substrate 140 is raised to the deposition position by the lifting ram 114.
Thereafter, the substrate heating means 150 and the reaction furnace heating means 160 are operated, and the compound source gas injector is heated while heating the wafer W placed on the substrate 140 and the reaction furnace 120 to an appropriate temperature of about 100 to 1,100 ° C. At 130, a compound source gas is injected into the reaction furnace 120.
The compound source gas injected from the injection pipe 131 of the compound source gas injector 130 is primarily injected into the gas preheating region H which is the uppermost end of the reaction furnace 120, where the reaction furnace heating means 160 After being sufficiently preheated by heat, it is sprayed to the gas mixing region M through the shower hole 132a drilled in the primary shower head 132, and after being sufficiently mixed here, it reacts through the shower hole 133a of the secondary shower head 133. The region R is injected and injected.

At this time, the shower holes 133a of the secondary shower head 133 are formed to have a smaller diameter and a larger number than the shower holes 132a of the primary shower head 132, so that the compound source gas injected into the gas mixing region M is Mix well while staying for a certain time.
After sufficiently preheated and mixed in this way, the compound source gas injected into the reaction space R through the shower hole 133a of the secondary shower head 133 is heated to an appropriate process temperature by the reaction furnace heating means 160. A compound thin film is deposited on the wafer W placed on the substrate 140 while reacting.

  In the above-described deposition process, the wafer W placed on the substrate 140 and the reaction furnace 20 are heated by the substrate heating means 150 and the reaction furnace heating means 160, and the injected compound source gas is mixed with the gas preheating region H and the gas mixture. Since it is sufficiently preheated while passing through the region M and then injected and injected into the reaction region R, the thermal effect is increased, and the gas preheating region H and gas partitioned by the primary shower head 132 and the secondary shower head 133 Since it is injected after being sufficiently mixed while passing through the mixing region M, a thin film having excellent film quality can be obtained without causing defects such as pinholes and cracks or inferior step coverage.

When the deposition is completed, the substrate 140 is lowered to the loading / unloading position by the elevating ram 114 while the reaction product or residual gas staying in the reaction furnace 120 is discharged through the exhaust port 112, and the deposition is performed through the wafer inlet / outlet 111. The completed wafer W is unloaded by a robot arm or the like.
In the state where the substrate 140 is lowered to the loading / unloading position, as described above, the substrate 140 is maintained at an accurate position by the action of the position determination groove 141 of the substrate 140 and the position determination pin 142 installed in the opening / closing plate 113. The unloading operation by the robot arm or the like is performed smoothly and accurately.
The reaction product or residual gas is mainly discharged through the exhaust port 112 of the vapor deposition base 110.

On the other hand, in this embodiment, a residual exhaust pipe 117 is connected between the gas mixing region M and the exhaust port 112, and an open / close valve 118 is installed in the middle thereof.
The residual gas discharge pipe 117 is closed by closing the on-off valve 118 in the vapor deposition process, and the compound source gas injected into the reaction furnace 120 is discharged through the residual gas discharge pipe 117, or a foreign substance or air from the outside. Prevent intrusion etc. When the wafer is unloaded after the deposition is completed and the reaction product and the residual gas are discharged, the gas mixing region M is connected to the exhaust port 112 by opening the on-off valve 118 to connect the gas mixing region M. The gas remaining inside can be quickly discharged.

  Here, the diameter of the shower hole 133a of the secondary shower head 133 installed in the lower part of the gas mixing region M is relatively small, and the residual gas in the gas mixing region 133 is transferred to the shower hole of the secondary shower head 133. In this embodiment, a residual gas exhaust pipe 117 connecting the exhaust port 112 is installed, and there is a concern that the film quality is deteriorated because a certain time is required to be discharged to the reaction region R and the exhaust port 112 through 133a. By opening the on-off valve 118 at the time of unloading, the residual gas in the gas mixing region M is discharged quickly and smoothly, so that deterioration of the film quality due to the gas can be prevented.

In the present embodiment, the plasma generating means 170 is used to apply a high frequency voltage to the reaction furnace 120 and the substrate 140 to generate plasma in the reaction region R, thereby promoting the reaction of the compound source gas. A film-like thin film can be deposited.
That is, when the plasma generator 171 is operated, a high frequency voltage is applied between the SiC secondary shower head 133 and the electrode 172 connected to the substrate 140, and plasma is generated between them to generate the primary shower head 132 and The compound source gas that has been sufficiently preheated and mixed while passing through the secondary shower head 133 is reacted smoothly by plasma discharge. Here, by using the secondary shower head 133 itself as an electrode without installing another electrode on the reaction furnace 120 side, the number of parts is reduced, the assembly is simplified, and the cost is reduced.

FIG. 2 shows a modification of the compound source gas injector 130 of the first embodiment described above. In this modification, an auxiliary injection pipe 134 is connected to the residual gas discharge pipe 117 and a residual gas discharge pipe 117 is connected. And the auxiliary injection pipe 134 are provided with a conversion valve 135.
In this modification, in the vapor deposition process, the exhaust valve 118 is closed and the conversion valve 135 is changed to a state where the auxiliary injection pipe 134 and the gas mixing region M are connected, and the compound source gas is supplied through the injection pipe 131. Injecting into the gas preheating region H and injecting into the gas mixing region M through the auxiliary injection tube 134, by introducing different types of compound source gases through the injection tube 131 and the auxiliary injection tube 134, thin films with various film qualities can be obtained. It can be evaporated.

In the process of unloading after the deposition is completed, the conversion valve 135 is converted to a state in which the gas mixing region M and the auxiliary injection pipe 134 are cut off and communicated with the residual gas discharge pipe 117 and the exhaust valve 118 is opened. Thus, by causing the residual gas in the gas mixing region M to be discharged quickly and smoothly through the residual gas discharge pipe 117, it is possible to prevent deterioration in film quality due to the residual gas.
Since other configurations and operational effects are the same as those of the first embodiment described above, the same reference numerals are given to the same parts, and detailed descriptions thereof are omitted.

FIG. 3 shows a modification in which the reactor heating means 160 of the first embodiment is modified. In this modification, the reactor heating means 160 surrounds the peripheral wall of the vaporizer base 110 and the peripheral wall of the reaction furnace 120. The jacket 161 and the jacket 162 mounted on the upper part of the reaction furnace 120 are installed, and the heating media 163 and 164 are circulated in the jackets 161 and 162.
As the heating medium, high-temperature steam or ethylene glycol can be used. However, when high-temperature steam is used, there is a disadvantage that equipment such as a boiler for obtaining the high-temperature steam is enlarged. It is desirable to heat and circulate by.
Since the other components of the present embodiment are the same as those of the first embodiment described above, the same reference numerals are given to the same portions, and the detailed description thereof is omitted.

  FIG. 4 shows a second embodiment of the present invention. In the low-pressure chemical vapor deposition apparatus according to this embodiment, the upper and lower portions are opened, and a wafer entrance / exit 211 for allowing the wafer W to enter and exit is formed on one side of the peripheral wall. A vaporizer base 210 having an exhaust port 21 for discharging reaction products on the other side, a reaction furnace 220 placed on top of the vaporizer base 210 and forming a reaction region R therein, and A compound source gas injector 230 is connected to the upper end side of the reaction furnace 220 to inject the compound source gas into the reaction furnace 220, and can be moved up and down to a loading / unloading position and a deposition position inside the reaction furnace 220. The substrate 240 on which the wafer W is placed, the substrate heating means 250 for heating the wafer W placed in the substrate 240 and placed on the substrate, and the reactor 20 is the same as that of the first embodiment described above in that it is constituted by a reaction furnace heating means 260 that heats the reaction furnace, but the structure of the reaction furnace 220 and the compound source gas injector 230 The structure is different, and the difference is that the substrate rotating means 243 for rotating the substrate 240 is provided, and the indirect heat transfer electrode member 280 is provided between the reaction furnace 220 and the reaction furnace heating means 260.

That is, in this embodiment, the lower end opening of the vapor deposition base 210 can be opened / closed by the opening / closing plate 213, and the lifting / lowering ram 214 for raising / lowering the substrate 240 is provided through the opening / closing plate 213.
The reactor 220 includes a cylindrical inner tube 221 whose upper and lower portions are opened and an outer tube 222 whose lower portion is opened and whose upper portion is closed. A compound source gas flow path 223 is formed between the inner and outer tubes 221 and 222. Is done.
Here, the upper end of the inner pipe 221 is installed lower than the upper surface of the outer pipe 222, and the compound source gas flow path 223 and the reaction region R communicate with each other through the upper end.

The compound source gas injector 230 includes an injection pipe 231 that communicates with the lower end of the compound source gas flow path 223.
The lifting ram 214 for lifting and lowering the substrate 240 is rotatably installed by the substrate rotating means 243 so as to perform both lifting and rotating operations.
The substrate heating means 250 is built inside the substrate 240 and can heat the wafer W placed on the substrate 240.
The reaction furnace heating means 260 surrounds the upper part and the peripheral wall of the reaction furnace 220 and is arranged such that the lower end is at least lower than the bottom surface of the substrate 240 during vapor deposition.

Here, the reactor heating means 260 may be a general electric heater, or may be provided with a jacket as shown in FIG. 3 and heated to circulate by heating high-temperature steam or ethylene glycol.
An indirect heat transfer electrode member 280 is installed between the upper surface and the peripheral wall of the reaction furnace 220 and the reaction furnace heating means 260.
This indirect heat transfer electrode member 280 is made of a material that has conductivity and is indirectly transferred by convection while reducing the heat of the reaction furnace heating means 260 directly to the inside of the reaction furnace 220 as much as possible. A material or a material having similar characteristics can be used.
4, unexplained reference numeral 215 is a stretchable dust cover, 216 is a cooling water circulation passage, and 217 is inserted between the vaporizer base 210 and the lower ends of the inner and outer pipes 221 and 222 to maintain airtightness. Packing.

  Hereinafter, the vapor deposition process and effects of the low pressure chemical vapor deposition apparatus according to the present embodiment will be described. First, after the substrate 240 fixed to the upper end thereof is lowered to the loading / unloading position by the lifting ram 214, the pressure in the reaction furnace 220 is maintained at an appropriate process pressure by a normal vacuum pump (not shown). In this state, the wafer W is placed on the substrate 240 through the wafer entrance / exit 211, and the substrate 240 is again raised to the deposition position by the elevating ram 214.

Thereafter, the substrate heating means 250 and the reaction furnace heating means 260 are operated to inject the compound source gas while heating the wafer W placed on the substrate 240 and the reaction furnace 220 to about 100 to 1100 ° C. which is an appropriate process temperature. A compound source gas is injected into the reactor 220 by the vessel 230.
The compound source gas injected from the compound source gas injector 230 is injected through the injection pipe 231 and flows from the lower end to the upper part of the compound source gas flow path 223 formed in the inner and outer pipes 221 and 222, and from the upper end thereof. It flows into the reaction region R.

Here, the compound source gas is sufficiently preheated by the heat of the reaction furnace heating means 260 in the process of flowing from the lower part to the upper part along the flow path 223, and then the compound source gas flowing into the reaction furnace 220 is the reaction furnace. It is deposited as a compound thin film on the wafer W placed on the substrate 240 while reacting in the reaction furnace 220 heated to an appropriate process temperature by the heating means 260.
In the above-described deposition process, the compound source gas is injected into the reactor 220 in a sufficiently preheated state while flowing from the lower part to the upper part of the compound source gas flow path 223 formed between the inner and outer tubes 221 and 222. Therefore, the thermal effect is increased, and the thin film is inferior in defects such as pinholes or cracks and the step coverage because it is injected into the reaction region R in the reactor 220 heated to an appropriate process temperature in a preheated state. A thin film with excellent film quality can be obtained without becoming.

Also, in this embodiment, the substrate rotating means 243 is installed on the lifting ram 214 for moving the substrate 240 up and down to rotate the substrate 240, so that the contact condition of the compound source gas with respect to the wafer W becomes uniform over the entire surface. A thin film with an appropriate film quality can be obtained.
On the other hand, in this embodiment, plasma is generated in the reaction region R by installing the plasma generating means 270 connected to the reaction furnace 220 side and the substrate 240 side and applying a high frequency voltage to the reaction furnace 220 and the substrate 240 side. It can be generated to promote the reaction of the compound source gas to deposit a thin film having a better film quality, or the inside of the reaction furnace can be etched.

  That is, when the plasma generator 271 is operated, a high frequency voltage is applied between the indirect heat transfer electrode member 280 made of SiC or carbon and the electrode 272 installed on the substrate 240, and plasma is generated between them, and the compound The reaction of the compound source gas that has been sufficiently preheated and mixed while flowing in the source gas flow path 223 is more actively performed by plasma discharge. Here, since the indirect heat transfer electrode member 280 itself is used as an electrode without installing another electrode on the reaction furnace 220 side, the number of parts is reduced, assembly is simplified, and cost is reduced.

FIG. 5 shows a third embodiment of the present invention. The low-pressure chemical vapor deposition apparatus according to this embodiment is a modification of the reaction furnace 220 and the compound source gas injector 230, and the other components are the above-described second embodiment. Since it is the same as the embodiment, the same reference numerals are given to the same parts, and the specific description thereof is omitted.
That is, in this embodiment, the reactor 220 is formed as a single tube 224 whose lower end is open and whose upper end is closed, and the compound source gas injector 230 passes through one side wall of the vaporizer base 210. Thus, a horizontal portion 232a extending into the reaction furnace 220 and a vertical portion 232b bent upward from the inner end of the horizontal portion 232a are formed by an injection tube 232 formed integrally.

Here, the upper end of the vertical portion 232b of the injection tube 232 is installed so as to be at least higher than the deposition position of the substrate.
In this embodiment, the reaction furnace 220 is constituted by a single tube 224 and the compound source gas can be injected into the upper part of the reaction region R. The process in which the compound source gas flows upward through the vertical part 232b. Since the reactor is sufficiently preheated by the reactor heating means 260, the same effects as those of the second embodiment described above can be obtained.

FIG. 6 shows a modification of the third embodiment. In this modification, only the compound source gas injector 230 of the third embodiment is modified.
That is, in this modification, the compound source gas injector 230 has a horizontal portion 233a penetrating one side peripheral wall of the vaporizer base 210 and a vertical portion 233b bent upward from the inner end of the horizontal portion 233a. A large-diameter external injection tube 233 and an internal injection tube 234 having a horizontal portion 234a and a vertical portion 234b inserted into the horizontal portion 233a and vertical portion 233b of the external injection tube 233, and an internal / external injection tube Different kinds of compound source gases can be injected simultaneously through the injection passage between 234 and 233 and the internal injection passage of the internal injection pipe 234, so that more various types of thin films can be deposited.

  In the present modification, the upper end of the vertical portion 233b of the external injection tube 233 is disposed at least at a position higher than the deposition position of the substrate, and the upper end of the vertical portion 234b of the internal injection tube 234 is installed at about the deposition position of the substrate. desirable. This is because the compound source gas injected through the two injection passages is mixed with each other in the space portion 235 between the upper end of the vertical portion 234b of the inner injection tube 234 and the upper end of the vertical portion 233b of the outer injection tube 233. This is to improve the film quality.

FIG. 7 shows another modification of the third embodiment, and this embodiment is a modification of the compound source gas injector 230 of the third embodiment.
That is, in this modification, the compound source gas injector 230 vertically penetrates the opening / closing plate 213 that opens and closes the lower part of the vapor deposition base 210, and the upper end thereof is extended to a position higher than the vapor deposition position of the substrate. It is configured.
Also in this modification, the compound source gas is sufficiently heated by the heat of the reaction furnace heating means 260 while flowing from the lower part to the upper part of the injection pipe 236 and then injected from the upper end into the upper part of the reaction region R. This has the same effect as the third embodiment described above.

FIG. 8 shows still another modification of the third embodiment. This modification is a modification of the compound source gas injector 230 of the above embodiment.
That is, in this modification, the compound source gas injector 230 penetrates the open / close plate 213 of the vaporizer base 210 up and down, and the external injection pipe 237 whose upper end extends to a position higher than the vapor deposition position of the substrate, The inner injection pipe 237 is inserted into the outer injection pipe 237 and the upper end of the inner injection pipe 238 is located at the deposition position of the substrate. The injection passage between the inner and outer injection pipes 238 and 237 and the inner injection pipe 238 are provided. While different types of compound source gases are injected through the preheated by the heat of the reactor heating means 160, the two types of compound source gases are mixed in the space 239 between the upper ends of the inner and outer injection tubes 238 and 237. This modification is configured to be injected into the reaction region R, and this modification also has the same effect as the third embodiment and the modification of FIG.

  FIG. 9 shows a fourth embodiment of the low-pressure chemical vapor deposition apparatus according to the present invention. In this embodiment, the upper and lower portions are opened, and a wafer inlet / outlet port 311 for allowing the wafer W to enter / exit is formed on one side of the peripheral wall. A vaporizer base 310 having an exhaust port 312 for discharging reaction products on the other side, a reaction furnace 320 placed on the vaporizer 310 and forming a reaction region R therein, and this reaction A compound source gas injector 330 is connected to the upper end side of the furnace 320 and injects a compound source gas into the reaction furnace 320, and can be moved up and down to a loading / unloading position and a deposition position inside the reaction furnace 320. A substrate 340 on which the wafer W is placed, a substrate heating means 350 for heating the wafer W placed on the substrate and placed on the substrate, and the reaction The structure of the reaction furnace 320 and the structure of the compound source gas injector 330 are the same as those of the third embodiment described above, except that the reaction furnace heating means 360 is installed around the reaction furnace 320 to heat the reaction furnace. Are different.

That is, in this embodiment, the reaction furnace 320 is placed on the vapor deposition base 310, and the inner tube 321 whose upper and lower portions are open, and the outer tube 322 that surrounds the upper and peripheral walls of the inner tube 321 and whose upper end is closed. The compound source gas flow path 323 is formed between the peripheral walls of the inner and outer pipes 321 and 322.
An interval connecting the compound source gas flow path 323 and the reaction region R is formed between the upper end of the inner tube 321 and the upper surface of the outer tube 322.
Further, the inner tube 321 is formed of a quartz tube, and the outer tube 322 has conductivity such as SiC material, and the heat of the reaction furnace heating means 360 is not directly transferred by radiation but indirectly heated by conduction and convection. The indirect heat transfer function and the function as an electrode of the plasma generating means 370 can be performed.

The compound source gas injector 330 includes an injection pipe 331 that communicates with the lower end of the compound source gas flow path 323.
In FIG. 9, reference numeral 313 is an opening / closing plate, 314 is an elevating ram, 315 is a dust cover, 316 is a cooling water channel, 317 is a packing, 343 is a substrate rotating means, 371 is a high frequency generator constituting the plasma generator 370, Reference numeral 372 denotes an electrode built in the substrate 340.
In this embodiment, the vapor deposition process including the compound source gas injection process is the same as that of the second embodiment described above, but the external tube constituting the reactor 320 is not provided with a separate indirect heat transfer electrode member. The difference is that the material of 322 is a material having indirect heat transfer and electrode functions.

  FIG. 10 shows a fifth embodiment of the low-pressure chemical vapor deposition apparatus according to the present invention. In this embodiment, the upper and lower portions are opened, and a wafer entrance / exit 411 for allowing the wafer W to enter and exit is formed on one side of the peripheral wall. A vaporizer base 410 formed with an exhaust port 412 for discharging reaction products on the side, a reaction furnace 420 which is placed above the vaporizer base 410 and forms a reaction region R therein, and this reaction A compound source gas injector 430 for injecting a compound source gas into the reaction furnace 420 and communicated with an upper end side of the furnace 420, and can be moved up and down to a loading / unloading position and a deposition position in the reaction furnace 420. A substrate 440 on which the wafer W is placed, a substrate heating means 450 for heating the wafer W placed on the substrate and placed on the substrate, and the reaction The configuration of the reactor heating means 460 installed around the reactor 420 for heating the reactor is the same as that of the fourth embodiment described above, and only the structure of the reactor 420 and the structure of the compound source gas injector 430 are included. Are different.

That is, in this embodiment, the reaction furnace 420 is formed of a single tube 421 whose bottom is open and whose top is closed, and this single tube 421 has an indirect heat transfer function and a basic function for providing the reaction region R. It is made of SiC material so as to have a function as an electrode of the plasma generating means.
The compound source gas injector 430 includes an injection pipe 431 that vertically penetrates the opening / closing plate 413 of the vapor deposition base 410 and whose upper end extends higher than the vapor deposition position of the substrate.

In FIG. 10, reference numeral 413 is an open / close plate, 414 is an elevating ram, 415 is a dust cover, 416 is a cooling water channel, 417 is a packing, 443 is a substrate rotating means, 417 is a high-frequency generator constituting the plasma generator 470, Reference numeral 472 denotes an electrode built in the substrate 440.
In this embodiment, the vapor deposition process including the process of injecting the compound source gas is the same as that in FIG. 7 described above. However, the reactor 420 is composed of a single tube 421 and another indirect heat transfer electrode member is provided. Since it differs only in that the material of the single tube 421 itself is a material having indirect heat transfer and an electrode function without being installed, the specific description thereof will be omitted.

FIG. 11 shows another embodiment of the substrate used in the present invention. In this embodiment, the compound source gas is uniformly distributed over the entire surface of the wafer W placed on the upper portion of the substrate 540. A compound source gas dispersion plate 544 is installed.
The substrate 540 and the dispersion plate 544 are coupled by a gap adjusting means 545 for adjusting the distance between them.
The gap adjusting means 545 is fixed to the substrate 540 and the dispersion plate 544, and includes screw bars 547 and 548 having spiral directions opposite to each other, and a turnbuckle adjustment knob 546 fastened to the screw bars 547 and 548. Is done. The three screw rods 547 and 548 are arranged so as to avoid interference with the wafer W that enters and exits through the wafer entrance 511.

  As described above, the substrate 540 is not contacted with the surface of the wafer W straightly in the process in which the compound source gas is injected into the reaction region R, and the wafer 580 placed on the substrate 540 is placed between the dispersion plate 544. Since the compound source gas contacts the wafer W through the gap and does not intensively contact any part of the wafer W but contacts the entire surface uniformly, the thickness of the thin film becomes uniform over the entire surface. Further, by adjusting the gap between the upper surface of the substrate 540 and the dispersion plate 544 to the optimum state by the gap adjusting means 545 according to the conditions of the compound source gas used or the thin film, a desired thin film can be obtained reliably.

Such a structure can be applied to any of the above-described embodiments, and the gap adjusting means 545 is not necessarily limited to the illustrated example. Any structure can be used as long as the gap can be adjusted. It can be adopted even if there is.
FIG. 12 shows still another embodiment of the substrate used in the low pressure chemical vapor deposition apparatus according to the present invention. In this embodiment, the wafer arm is smoothly loaded / unloaded by the robot arm A and the entire surface of the wafer W is shown. Can be brought into contact with the substrate.

A substrate 600 according to the present embodiment is installed on a substrate body 610 on which a resting portion 611 on which a portion excluding a part of both-side arc portions C1 of the wafer W is placed, and the substrate body 610 can be moved up and down. The wafer holder 620 includes an auxiliary resting portion 625 that is formed in the outer shape of the resting portion 611 and on which both-side arc portions C1 of the wafer W that have been removed from the resting portion 611 are rested.
An arc-shaped protrusion 615a is formed on the arc portion 615 of the rest portion 611 so that the outer peripheral surface of the arc portion C1 of the wafer W contacts the inner surface.
The tip straight portion 613 has a length that matches the flat zone F of the wafer W.
The arc-shaped protrusion 615a is desirably formed so as to protrude at least about 0.8 mm which is the thickness of the wafer W.
The wafer holder 620 is open at the rear and is formed in a disc shape having a cut groove that is generally limited to a U shape by a connecting arc portion 624 formed between the straight portions 622 and 625.

In the illustrated example, the outer diameter of the wafer holder 620 is the same as the outer diameter of the substrate body 610, and the width of the cut groove is formed wider than the width of the robot arm A.
The both-side straight portion 625 is formed with an auxiliary resting portion 625a on which the both-side arc portions C1 of the wafer are rested.
An arc-shaped protrusion is formed on the outer periphery of the auxiliary erection portion 625a so that the outer peripheral surface of the both-side arc portion C1 of the wafer W is in contact with the inner surface. The arc-shaped protrusion is desirably formed so as to protrude at least about 0.8 mm, which is the thickness of the wafer W, like the arc-shaped protrusion 615a of the rest portion 611 described above.
In addition, a holder elevating unit 630 is provided to drive the wafer holder 620 up and down.

As shown in FIG. 13, the holder elevating unit 630 has a plurality (three in the drawing) of connecting rods 631 whose upper ends are fixed to the outer peripheral portion of the wafer holder 620 and the lower ends of the connecting rods 631. The elevating connection part 634 is configured to be moved up and down by elevating drive means (not shown) which is a normal linear reciprocating mechanism.
A plurality of (as many as connecting rods) connecting pieces 632 and 635 protrude from the outer peripheral portion of the wafer holder 620 and the lift connecting portion 634, and the upper and lower ends of the connecting rod 631 are fixed to the connecting screws 632 and 635 by fixing screws 633. , 636 to fix the wafer holder 620 and the lift connecting portion 634 so that they can be lifted and lowered integrally.

The connecting rods 631 are installed on the front and both sides except for the rear side, which is the direction in which the wafer is loaded / unloaded, so as not to cause interference with the wafer when loading / unloading the wafer W. Yes. A ram through hole 637 through which an elevating ram for elevating the substrate is penetrated is formed in the center of the elevating connection part 634 so that the elevating ram and the holder elevating part 630 do not interfere with each other.
Around the ram through hole 637 of the elevating connecting portion 634, a screw through hole 638 for coupling the elevating driving means is formed.
As the raising / lowering driving means, a linear raising / lowering movement mechanism using a hydraulic cylinder, pneumatic cylinder, stepping motor, and screw can be used, and any structure that can raise and lower the wafer holder 620 and the holder raising / lowering part 630 can be used. Even things can be adopted.

Hereinafter, processes and effects of loading and unloading the wafer W by the substrate 600 according to the present embodiment will be described.
As shown in FIGS. 12 and 14A, the holder lifting / lowering unit 630 is raised by the raising / lowering driving means, and the wafer holder 620 coupled thereto is raised to a position where the bottom surface thereof is separated from the upper surface of the substrate body 610 upward. In this state, the wafer W placed on the robot arm A enters the wafer holder 620 from behind at a position higher than the wafer holder 620.
As shown in FIG. 14C, the wafer W enters, the flat zone F of the wafer W coincides with the upper portion of the straight portion 613 of the substrate, and both side arc portions C1 of the wafer W are arranged on both side resting portions 625a of the wafer holder 620. When they match, the robot arm A is lowered as shown in FIG. 14C, and the wafer W placed thereon is placed on the auxiliary seating portion 625a of the wafer holder 620.

At this time, since the width of the robot arm A is smaller than the inner width of the cut groove of the holder 620, the robot arm A and the holder 620 do not interfere with each other.
The wafer W placed on the holder 620 is rested on the auxiliary resting portion 625a, and the outer peripheral edge of the arc portion C1 is brought into contact with the inner side of the arc-shaped protrusion 615a.
Next, when the robot arm A is retracted, the wafer W is supported only by the holder 620.
When the robot arm A moves backward, the lifting / lowering driving means lowers the holder lifting / lowering portion 630 together with the holder 620 coupled to the upper end thereof, and the wafer W placed thereon is placed on the resting portion 611 as shown in FIG. 14D. Let

When the substrate 600 according to the present embodiment is used, the heat of the substrate heating means built in the substrate body 610 is directly transferred to the portion resting on the resting surface 612 of the resting portion 611, and assisting the holder 620. Since heat is transferred through the holder 620 to the portion rested on the resting portion 625a, the wafer W is heated uniformly over the front surface thereof.
Therefore, the wafer W is adhered to the entire surface of the substrate 600 and deposited while being uniformly heated, so that a good quality thin film can be obtained without being deposited to the bottom surface or generating particles. Homogeneity is ensured and heat loss is eliminated.

Further, since no separate thin lifting pins are used unlike the prior art, damage to parts is eliminated and maintenance and repair are simplified.
Furthermore, since the outer peripheral edge of the arc portion C1 of the wafer W is placed in a state where the rest portions 611 and the inner peripheral surfaces of the arc-shaped projections 615a and 625a formed on the holder 620 are in contact with each other, the thermal efficiency is further improved. .
FIG. 15 shows another embodiment of the substrate according to the present invention. In this embodiment, the outer diameter of the wafer holder 620 is formed smaller than the outer diameter of the substrate body 610. The heat transfer efficiency for the wafer W can be adjusted by the film quality.
In this embodiment, as the outer diameter of the holder 620 is made smaller than the diameter of the substrate body 610, the length of the connecting piece 632 to which the connecting rod 631 is connected is reduced.

The other components are the same as those in the embodiment shown in FIGS. 12 to 14 described above. Therefore, the same reference numerals are given to the same portions, and the detailed description thereof is omitted.
The substrate according to the embodiment of FIGS. 14 and 15 can be applied to all the embodiments described above.
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present invention.

It is a longitudinal cross-sectional view which shows 1st Example of the low pressure chemical vapor deposition apparatus by this invention. It is a longitudinal cross-sectional view which shows the modification of 1st Example. It is a longitudinal cross-sectional view which shows the other modification of 1st Example. It is a longitudinal cross-sectional view which shows 2nd Example of the low pressure chemical vapor deposition apparatus by this invention. It is a longitudinal cross-sectional view which shows 3rd Example of the low pressure chemical vapor deposition apparatus by this invention. It is a longitudinal cross-sectional view which shows the modification of 3rd Example. It is a longitudinal cross-sectional view which shows the other modification of 3rd Example. It is a longitudinal cross-sectional view which shows the other modification of 3rd Example. It is a longitudinal cross-sectional view which shows 4th Example of the low pressure chemical vapor deposition apparatus by this invention. It is a longitudinal cross-sectional view which shows 5th Example of the low pressure chemical vapor deposition apparatus by this invention. It is the elements on larger scale which show the other Example of the board | substrate used for this invention. It is a partial expansion perspective view which shows the further another Example of the board | substrate used for this invention. FIG. 13 is a partially exploded perspective view of the substrate shown in FIG. 12. FIG. 13 is an operational state diagram of the substrate shown in FIG. 12. It is a fragmentary perspective view which shows the further another Example of the board | substrate used for this invention. It is a longitudinal cross-sectional view which shows an example of the conventional low pressure chemical vapor deposition apparatus. It is a longitudinal cross-sectional view which shows an example of the conventional plasma low pressure chemical vapor deposition apparatus. It is a perspective view which shows an example of the board | substrate used for the conventional low pressure chemical vapor deposition apparatus. It is an operation state sectional view showing other examples of a substrate used for the conventional low-pressure chemical vapor deposition apparatus.

Explanation of symbols

110, 210, 310, 410 Vaporizer base 120, 210, 320, 420 Reactor 130, 230, 330, 430 Compound source gas injector 140, 240, 340, 440, 540, 600 Substrate 150, 250, 350, 450 Substrate heating means 160, 260, 360, 460 Reactor heating means 170, 270, 370, 470 Plasma generating means 610 Substrate body 620 Wafer holder 630 Holder lifting / lowering unit

Claims (8)

A vaporizer base;
A reactor placed in the vaporizer base and having a reaction zone therein;
A substrate disposed within the reactor and on which a wafer is placed;
A substrate heating means for heating a wafer mounted on the substrate; and a compound source gas injector for injecting a compound source gas into the reaction furnace,
The compound source gas injector includes an external injection pipe extending to a position higher than a deposition position of a wafer, and an internal injection pipe inserted and installed in the external injection pipe.   The external injection tube has a horizontal portion that penetrates one peripheral wall of the vapor deposition base and a vertical portion that is bent upward from an inner end of the horizontal portion, and an upper end of the vertical portion is a reactor. The low-pressure chemical vapor deposition apparatus according to claim 1, wherein the low-pressure chemical vapor deposition apparatus is formed so as to be located on an upper portion of the substrate.   The low pressure chemical vapor deposition apparatus according to claim 1, wherein the external injection tube is formed to penetrate the bottom surface of the vapor deposition base and to have an upper end located at an upper portion of the reaction furnace.   The low-pressure chemical vapor deposition apparatus according to claim 1, wherein the upper end height of the inner injection tube is lower than the upper end height of the outer injection tube.   The low-pressure chemical vapor deposition apparatus according to claim 1, wherein the reaction furnace further includes a reaction furnace heating unit.   6. The low pressure chemical vapor deposition apparatus according to claim 5, wherein the reaction furnace heating means is installed in a state of being separated from an upper part of the reaction furnace and a peripheral wall.   6. The low pressure chemical vapor deposition apparatus according to claim 5, wherein the reaction furnace further includes plasma generation means connected to a high frequency generator.   A heat transfer electrode member is further mounted in a space formed by separating the reaction furnace heating means and the reaction furnace, and the heat transfer electrode member further includes plasma generation means connected to a high frequency generator. The low pressure chemical vapor deposition apparatus according to claim 6.

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