JP2003324215A - Light emitting diode lamp - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a light emitting diode lamp wherein a fluorescent material emits light effectively having a prescribed bright color. <P>SOLUTION: A light introducing and scattering layer 14 is constituted of a scattering member 22 and a transparent binder 23 which perform the introduction and diffusion of light wherein emission light from a light emitting diode chip 11 is received directly in a state of bonding. In the layer 14, light introduced by the scattering member 22 is diffused by changing the reflecting direction of the light complicatedly, and introduced in a fluorescent light emitting layer 17 composed of the transparent binder 16 containing a fluorescent material 15 that emits light with a prescribed color. The light introducing and scattering layer 14 reduces the possibility of direct incidence to the fluorescent material 15 of the fluorescent light emitting layer 17 in a state that a light density is high as direct light from the light emitting diode chip 11, so that incidence in the fluorescent material 15 is performed in a state that the incident light is dispersed, and light emission is performed by the whole of the fluorescent light emitting layer 17, thereby enabling effective light emission. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode used for a backlight of various displays, a light sensor, a light source of a printer, etc., and relates to a light emitting diode lamp which emits light of a desired color by using a fluorescent substance. It is a thing.

[0002]

2. Description of the Related Art Registered Utility Model No. 304
Inventions such as 8368 and Japanese Patent No. 3065263 can be mentioned.

For example, in Registered Utility Model No. 3048368, a fluorescent material is applied to the surface of or around a light emitting diode to emit white light or various colors, and is based on a purple light emitting diode chip. If so, the wavelength-tunable fluorescent material applied to the surface thereof is stimulated to become a light emitting diode for various lights different from purple. The configuration of Japanese Patent No. 3065263 is basically the same.

[0004]

However, according to the experiments conducted by the inventors of the present invention, the luminous efficiency of many types of fluorescent materials tends to decrease as the amount of absorbed light (light density) increases, and the light emitting diode It was confirmed that even if the light from the chip was brightened, it was saturated at a predetermined value and the luminous efficiency of the fluorescent material could not be increased.

Therefore, an object of the present invention is to provide a light emitting diode lamp having a predetermined color and capable of efficiently emitting light from a fluorescent material.

[0006]

According to a first aspect of the present invention, there is provided a light emitting diode lamp, wherein the light emitting diode emits light at any wavelength from infrared to ultraviolet and directly receives the light emitted from the light emitting diode in an adhesive state. A fluorescent light emitting layer made of a transparent binder joined to a light emitting diode and made of a transparent binder for guiding and diffusing light, and a transparent binder containing a fluorescent material that introduces light from the light guiding and scattering layer and emits light of a predetermined color. And is equipped with.

Therefore, the light guide / scattering layer made of a transparent binder for directly receiving the light emitted from the light emitting diode in an adhesive state and guiding and diffusing the light is scattered by using a material having a high refractive index or a plurality of layers. By changing the materials having different refractive indexes to increase the probability of reflection occurring at the boundary surface to scatter the light, the light is led to a fluorescent light emitting layer containing a fluorescent material that emits light of a predetermined color.

As described above, the light guide / scattering layer reduces the probability that light is incident on the fluorescent material of the fluorescent light emitting layer in a state where the light density is high such as direct light from the light emitting diode chip, and the incident light is dispersed. Since the light is incident in this state, the entire fluorescent light emitting layer is made to emit light, which enables efficient light emission.

Here, the light emitting diode may be either a light emitting diode chip or a light emitting diode lamp, but since the light emitting diode lamp has a lens portion of a bullet type or the like formed of resin, it is mounted on the light emitting diode chip. It can also be a light-scattering layer or one of them.

Further, the light guide scattering layer made of a transparent binder for directly receiving the light emitted from the light emitting diode in an adhered state and guiding and diffusing the light can be formed in one layer or a plurality of layers, or made of a material having a relatively high refractive index. can do. In any case, it is sufficient that the emitted light from the light emitting diode can be dispersed and guided to the fluorescent light emitting layer.

The fluorescent light-emitting layer contains a fluorescent material that emits light of a predetermined color by introducing light from the scattering layer in multiple directions. Even if the state in which is decreased, the emission efficiency of many other particles of the fluorescent material is increased, and the emission efficiency may be increased as a whole.

The light emitting diode may be any one that emits light in any wavelength range from infrared to ultraviolet, and in particular, if it emits light in the ultraviolet range or near-ultraviolet range, it can be directly emitted from the light emitting diode. The light can be efficiently converted into the emitted light without the human being recognizing it. In particular, it is suitable for those that emit white light in the ultraviolet region.

According to a second aspect of the present invention, there is provided a light emitting diode lamp, wherein the light emitting diode emits light at any wavelength in the range from infrared rays to ultraviolet rays, and the light guide diffusion is connected to the light emitting diode which directly receives the light emitted from the light emitting diode. A light guide scattering layer made of a scattering material and a transparent binder,
And a fluorescent light emitting layer made of a transparent binder in which a fluorescent material that emits light of a predetermined color is introduced.

The light guide / scattering layer composed of a transparent binder and a scattering material for guiding and diffusing the light emitted from the light emitting diode directly in a bonded state is obtained by changing the reflection direction of the light introduced by the scattering material in a complicated manner. It diffuses and leads to a fluorescent light emitting layer made of a transparent binder containing a fluorescent material that emits light of a predetermined color.

As described above, the light guide / scattering layer reduces the probability of direct incidence on the fluorescent material of the fluorescent light emitting layer in a state of high light density such as direct light from a light emitting diode, and a state in which incident light is dispersed. Therefore, the entire fluorescent light emitting layer is made to emit light, and efficient light emission becomes possible.

Here, the light emitting diode may be either a light emitting diode chip or a light emitting diode lamp. The light emitting diode lamp is inevitably large in size because a lens portion such as a shell is formed of resin. ,
When applied to a light emitting diode chip, it can be miniaturized and
The effect is remarkable.

Further, the light guide scattering layer which directly receives the light emitted from the light emitting diode in an adhesive state is diffused by changing the reflection direction of the light introduced by the scattering material in a complicated manner,
Any material may be used as long as it guides it to the fluorescence emitting layer.

The fluorescent light emitting layer contains a fluorescent material that emits light of a predetermined color by introducing reflected light from the scattering layer of the light guide scattering layer in multiple directions. Even if a part of the luminous efficiency is reduced, the luminous efficiency of the particles of many other fluorescent materials is increased, and the fluorescent material is mixed at a density that can increase the luminous efficiency as a whole. Just go.

The light emitting diode may be any one that emits light at any wavelength from infrared to ultraviolet, and particularly if it emits light in the ultraviolet or near-ultraviolet region, it can be directly emitted from the light emitting diode. The light can be efficiently converted into the emitted light without the human being recognizing it. In particular, it is suitable for those that emit white light in the ultraviolet region.

Since the scattering material of the light emitting diode lamp according to claim 3 is one or more of aluminum oxide, titanium oxide, barium titanate and silicon oxide, there is an effect that an inexpensive material can be used. .

The concentration of the scattering material mixed in the light emitting diode lamp according to claim 4 is set to a volume range of 2 to 20% with respect to the transparent binder. When the scattering material is mixed to this extent, the thickness error does not affect the emitted light, so that a uniform brightness and high efficiency can be obtained.

The thickness of the scattering layer of the light emitting diode lamp according to claim 5 is 50 to 300 μm. With this thickness, the concentration of the scattering material prevents the light of the light emitting diode from reaching the fluorescent material due to the scattering material. Efficient arrival of light is performed.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION A light emitting diode lamp according to an embodiment of the present invention will be described below. Embodiment 1

FIG. 1 is a sectional view showing a schematic structure of a section of a light emitting diode lamp according to a first embodiment of the present invention.

In FIG. 1, the light emitting diode lamp 10 of the present embodiment uses a light emitting diode chip 11 as a light emitting diode that emits light at any wavelength from infrared to ultraviolet. Although the lead wire is omitted in the figure, the light is arranged so as to radiate above the cup 2 formed at the tip of the lead frame 1.

The light emitting diode chip 11 is coated with a transparent binder such as an epoxy resin, an acrylic resin, a urea resin or a silicone resin to form an inner resin layer 12. For the inner resin layer 12, a material having high adhesiveness to the light emitting diode chip 11 is selected, and normally,
It is formed with a thickness of several tens μ or more. The inner resin layer 1
The thickness of 2 is determined by the number of superposed layers and the refractive index thereof, and therefore, when the present invention is carried out, it is premised that the thickness is not less than several tens of μ as described above. is not.

Further, an outer resin layer 13 is formed on the outer periphery of the inner resin layer 12. The outer resin layer 13 is filled with a binder such as an epoxy resin, an acrylic resin, a urea resin, or a silicone resin having a refractive index different from that of the inner resin layer 12 around the cup 2 in which the light emitting diode chip 11 is arranged.

The inner resin layer 12 and the outer resin layer 13 constitute the scattering layer 14 of this embodiment. As a result, the scattering layer 14 has a thickness of 50 to 300 μ.

A fluorescent light emitting layer 17 is filled on the scattering layer 14 of the cup 2 in which the light emitting diode chip 11 is arranged. The fluorescent light emitting layer 17 is composed of a transparent binder 16 containing a fluorescent material 15 that emits light of a predetermined color. Fluorescent material 15
Is a rare earth phosphor such as Y, Gd or Ce,
In the case of carrying out the present invention, examples thereof include, but are not limited to, fluorescent materials such as inorganic fluorescent materials, organic fluorescent materials, fluorescent dyes, and fluorescent pigments. The fluorescent light emitting layer 17 is made of the fluorescent material 1.
The fine powder of No. 5 is kneaded with a transparent binder such as an epoxy resin, an acrylic resin, a urea resin, and a silicone resin. This fluorescent light emitting layer 17 is also formed to have a thickness of 10 to 300 μ. The mixing concentration of the fluorescent material 15 is set to a volume range of 2 to 20% with respect to the transparent binder 16, but the thickness of the fluorescent light emitting layer 17 is set to the fluorescent material 1.
If the mixed concentration of 5 is low, the layer is formed thick, and if the mixed concentration is high, the layer is formed thin.

As described above, the light emitting diode lamp 10 according to the present embodiment directly emits the light emitting diode chip 11 that emits light at any wavelength from the infrared to the ultraviolet region and the light emitted from the light emitting diode chip 11 in an adhesive state. Inner resin layer 12 and outer resin layer 1 made of a transparent binder joined to a light-emitting diode chip 11 for receiving and guiding and diffusing light.
And a fluorescent light emitting layer 17 including a transparent binder 16 in which a fluorescent material 15 that emits light of a predetermined color by introducing light from the light guiding and scattering layer 14 is introduced. .

Therefore, the light guide scattering layer 14 composed of the inner resin layer 12 and the outer resin layer 13 made of a transparent binder that directly receives the light emitted from the light emitting diode chip 11 in an adhesive state and guides and diffuses the light. By changing the material of the layer, the probability of reflection occurring at the boundary surface is increased and scattered, and the light is guided to the fluorescent light emitting layer 17 formed of the transparent binder 16 containing the fluorescent material 15 that emits light of a predetermined color. .

As described above, the light guide scattering layer 14 reduces the probability of being incident on the fluorescent material 15 of the fluorescent light emitting layer 17 in a state where the light density is high such as the direct light from the light emitting diode chip 11, and the incident light is reduced. Since the probability of being incident in a dispersed state is increased, the entire fluorescent light emitting layer is caused to emit light, which enables efficient light emission. The fluorescent light emitting layer 17 contains a fluorescent material that introduces light from the light guide / scattering layer 14 in multiple directions and emits light of a predetermined color. Even if the state of decreasing is generated, the luminous efficiency of many other particles of the fluorescent material 15 is increased, and the luminous efficiency can be increased as a whole.

Here, the light emitting diode chip 11 may be a light emitting diode lamp, and the light emitting diode lamp is made of resin and has a light guide scattering layer or one of the lens portions such as a bullet-shaped lens portion. You can also

The light guide scattering layer 1 made of a transparent binder for guiding and diffusing the light emitted from the light emitting diode chip 11.
4 can be formed in one layer or a plurality of layers of two or more layers, or can be made of a material having a relatively high refractive index. In any case, it is sufficient that the light emitted from the light emitting diode chip 11 can be dispersed and guided to the fluorescent light emitting layer 17.

The light emitting diode chip 11 used in this embodiment may be any one that emits light at any wavelength from infrared to ultraviolet, especially in the ultraviolet and near-ultraviolet regions. For example, the direct light from the light emitting diode chip 11 can be efficiently converted into the emitted light without the human being recognizing it. In particular, it is suitable for those that emit white light in the ultraviolet region.

According to the experiments conducted by the inventors, if a device for generating near-ultraviolet light is used for the light emitting diode chip 11 and the fluorescent material 15 is stimulated by near-ultraviolet light, the energy is compared because the wavelength is relatively short. It can be stimulated strongly and efficiency can be increased.
The light emitting diode chip 11 for generating near-ultraviolet light is made of a GaN material and has a wavelength of 360 to 390 nm. This wavelength band is harmless to the human body and stimulates the fluorescent material 15 of the fluorescent light emitting layer 17 with near-ultraviolet light. However, any material (color) can be used as the fluorescent material 15, and light of various colors can be used. Can be emitted.

Second Embodiment FIG. 2 is a sectional view showing a schematic structure of a section of a light emitting diode lamp according to a second embodiment of the present invention. In the embodiment of the present invention, the same symbols and reference numerals as in the first embodiment are the same as or equivalent to those in the first embodiment.

In the figure, the light emitting diode lamp 20 of the present embodiment uses a light emitting diode chip 11 as a light emitting diode which emits light at any wavelength from infrared to ultraviolet. Although the lead wire is omitted in the figure, the light is arranged so as to be emitted above the cup 2 formed at the tip of the lead frame 1.

In the light emitting diode chip 11, a scattering material 22 made of one or more of aluminum oxide, titanium oxide, barium titanate, and silicon oxide, which is bonded to the light emitting diode chip 11 and diffuses light, and an epoxy resin, an acrylic resin. The light guide scattering layer 14 made of a transparent binder 23 such as urea resin or silicone resin is formed.

For the transparent binder 23 of the light guide scattering layer 14, a material having high adhesiveness to the light emitting diode chip 11 is selected. The thickness of the light guide / scattering layer 14 depends on the scattering material 22.
It is determined by the content rate of. In addition, the transparent binder 23
Is made of synthetic resin or synthetic rubber such as epoxy resin, acrylic resin, urea resin, and silicone resin. The scattering material 22 is mixed and kneaded, and then the light emitting diode chip 1 is used.
1 is filled around the cup 2.

In FIG. 2, the light guide scattering layer 14 is formed in an arc shape on the light emitting diode chip 11, but the transparent binder 23 having a relatively large surface tension capable of maintaining the adhesiveness of the light emitting diode chip 11 is formed. The thickness of the light emitting diode chip 11 at the position where the light emitting density is high is increased and the light emitting density is made uniform. Of course, in the case of implementing the present invention, it is not necessary to form the light guide scattering layer 14 in an arc shape on the light emitting diode chip 11, and it may be a surface (horizontal surface) parallel to the opening of the cup 2. In particular, in the case where the light guide scattering layer 14 is formed on the light emitting diode chip 11 in an arc shape, a convex lens shape with a thick center and a thin circumference, the light emitting density emitted from the light guide scattering layer 14 can be made uniform. Therefore, the light guide scattering layer 14 including the scattering material 22 and the transparent binder 23 can be made brighter. The scattering layer 14 is 50 to 30.
It is 0 μ.

A fluorescent light emitting layer 17 is filled on the scattering layer 14 of the cup 2 in which the light emitting diode chip 11 is arranged. The fluorescent light emitting layer 17 is composed of a transparent binder 16 containing a fluorescent material 15 that emits light of a predetermined color. Fluorescent material 15
Examples of the rare earth phosphor include Y, Gd, and Ce. The fluorescent light emitting layer 17 is obtained by kneading fine powder of the fluorescent material 15 with a transparent binder such as an epoxy resin, an acrylic resin, a urea resin or a silicone resin. This fluorescent light emitting layer 17
Is also formed to a thickness of 10 to 300 μm. Fluorescent material 15
The mixed concentration of the fluorescent material 15 is set to a volume range of 2 to 20% with respect to the transparent binder 16.
If the mixture concentration is low, the layer is formed thick, and if the concentration is high, the layer is formed thin.

As described above, the light emitting diode lamp 20 of this embodiment directly receives the light emitting diode chip 11 which emits light at any wavelength from the infrared region to the ultraviolet region and the light emitted from the light emitting diode chip 11. The light from the light guide scattering layer 14 that is joined and that guides and diffuses the light emitted from the light emitting diode chip 11 and the transparent binder 23 and the light from the light guide scattering layer 14 are introduced to emit light in a predetermined color. Transparent binder 16 containing fluorescent material 15
And a fluorescent light emitting layer 17 made of.

Therefore, the light guide / scattering layer 14 composed of the scattering material 22 and the transparent binder 23 for directly guiding and diffusing the light emitted from the light emitting diode chip 11 in the adhesive state is provided for the light introduced by the scattering material 22. The light is diffused by changing the reflection direction intricately and led to the fluorescent light emitting layer 17 formed of a transparent binder 16 containing a fluorescent material 15 that emits light of a predetermined color. Thus, the light guide scattering layer 1
Reference numeral 4 denotes a state in which the light density is high, such as direct light from the light emitting diode chip 11, and the probability that the light is directly incident on the fluorescent material 15 of the fluorescent light emitting layer 17 is lowered, so that the incident light is dispersed and the fluorescent material 15 is formed. Since the light is incident on, the entire fluorescent light emitting layer 17 is caused to emit light, and efficient light emission is possible. Further, the fluorescent light emitting layer 17 is a layer in which the fluorescent material 15 that emits light of a predetermined color by introducing the reflected light from the scattering layer 22 of the light guide / scattering layer 14 in multiple directions is included. Even if a state where the light emission efficiency is lowered occurs in a part of the above, the light emission efficiency of many other particles of the fluorescent material 15 is increased, and the light emission efficiency can be increased as a whole. Here, the light emitting diode chip 11 may be a light emitting diode lamp. However, the effect is particularly remarkable when applied to a light emitting diode chip.

The light-guide scattering layer 14 which directly receives the light emitted from the light-emitting diode chip 11 in an adhesive state is diffused by changing the reflection direction of the light introduced by the scattering material 22 in a complicated manner, and fluorescent light is emitted. Any material that leads to the layer 17 may be used.

Further, the light emitting diode chip 11 may be any one that emits light in any wavelength from infrared to ultraviolet region, and in particular, in the case of light emission in the ultraviolet region or near ultraviolet region, the light emitting diode chip 11 emits light. The direct light can be efficiently converted into the emitted light without the human being recognizing it. In particular, it is suitable for those that emit white light in the ultraviolet region.

Naturally, as described above, if an element for generating near-ultraviolet light is used for the light-emitting diode chip 11 and the fluorescent material 15 is stimulated by near-ultraviolet light, the energy is relatively short because the wavelength is relatively short. It can stimulate strongly and increase efficiency. The light emitting diode chip 11 for generating near-ultraviolet light is Ga
It is made of N material and has a wavelength of 360 to 390 nm. This wavelength band is harmless to the human body and stimulates the fluorescent material 15 of the fluorescent emitting layer 17 with near-ultraviolet light.
Any material (color) can be used as 5, and light of various colors can be emitted.

Third Embodiment FIG. 3 is a sectional view showing a schematic structure of a section of a light emitting diode lamp according to a third embodiment of the present invention. In the embodiment of the present invention, Embodiment 1 and Embodiment 2
The same symbols and symbols as are the same as or equivalent to those in the first and second embodiments.

In the figure, the light emitting diode lamp 40 of the present embodiment uses a light emitting diode chip 41 as a light emitting diode which emits light at any wavelength from infrared to ultraviolet. Light emitting diode chip 41
Has a flip chip structure and is connected to the upper surface of the Zener diode 30 by a gold ball bump 41a. The lower surface of the Zener diode 30 is provided on the inner surface of the cup 2 formed at the tip of the lead frame 1 by the conductive silver-containing epoxy resin 31. Therefore, the Zener diode 30 is electrically and mechanically connected to the cup 2 of the lead frame 1. The other end of the Zener diode 30 is connected to the lead frame 3 via the lead 4.

For the Zener diode 30,
The light emitting diode chips 41 are connected in parallel by gold ball bumps 41a. Light emitting diode chip 41
Is arranged so that light is emitted above the Zener diode 30 and above the cup 2.

The light emitting diode chip 41 has a light guiding scattering layer which is joined to the light emitting diode chip 41 and which is composed of a scattering material (same as 22 in FIG. 2) and a transparent binder (same as 23 in FIG. 2). 44 are formed.

Transparent binder (23) for the light guide scattering layer 44
As the material, a material having high adhesiveness to the light emitting diode chip 41 is selected. The thickness of the light guide scattering layer 44 is determined by the content ratio of the scattering material (22). As the transparent binder (23), synthetic resin or synthetic rubber is used, and the scattering material (22) is mixed and kneaded, and the mixture is injected around the cup 2 in which the light emitting diode chip 41 is arranged. Naturally, the light guide scattering layer 44 is also formed between the Zener diode 30 and the light emitting diode chip 41.

In FIG. 3, the light guide scattering layer 44 is formed so as to wrap around the light emitting diode chip 41. This is a transparent binder (23) having a relatively small surface tension that can maintain the adhesiveness of the light emitting diode chip 41. ) Is used. Since the light from the light emitting diode chip 41 has a flip chip structure, the light is reflected on the upper surface of the Zener diode 30 and guided upward. Also, the light emitting diode chip 4
Light is radiated from 1 directly upward through the substrate. At this time, the light emission density from the light emitting diode chip 41 is made uniform, and the light emitted upward from the opening of the cup 2 can be obtained. In particular, since the light emitting diode chip 41 has a flip-chip structure, it is possible to uniformize the light emission density emitted from the light guide scattering layer 44, and thus the scattering material (2
2) and a light guide scattering layer 44 composed of a transparent binder (23)
The brightness of can be made brighter. It is effective that the scattering layer 44 has a thickness of 50 to 300 μm.

A fluorescent light emitting layer 47 is filled on the scattering layer 44 of the cup 2 in which the light emitting diode chip 41 is arranged. The fluorescent light emitting layer 47 is a transparent binder (4 in FIG. 2) containing a fluorescent material (same as 45 in FIG. 2) that emits light of a predetermined color.
(Same as 6). The fluorescent material (45) is a rare earth phosphor or the like. The fluorescent light emitting layer 47 is made of the fluorescent material (4
The fine powder of 5) is kneaded with a transparent binder. The fluorescent light emitting layer 47 is also preferably formed to have a thickness of 10 to 300 μ. The mixing concentration of the fluorescent material (45) is set to a volume range of 2 to 20% with respect to the transparent binder (46), but if the mixing concentration of the fluorescent material (45) is low, it is formed thick. If there is a large amount, it will be formed thin.

As described above, the light emitting diode lamp 40 according to the present embodiment is electrically connected in parallel to the light emitting diode chip 41, which emits light at any wavelength from infrared to ultraviolet. The zener diode 30 and the scattering material (2) that is joined to directly receive the light emitted from the light emitting diode chip 41 and guides and diffuses the light emitted from the light emitting diode chip 41.
2) and a light guide scattering layer 44 composed of a transparent binder (23)
And a fluorescent light emitting layer 47 including a transparent binder (46) containing a fluorescent material (45) that emits light of a predetermined color by introducing light from the light guide scattering layer 44.

Therefore, the light guide scattering layer 44 composed of the scattering material (22) for directly guiding and diffusing the emitted light from the light emitting diode chip 41 in a bonded state and the transparent binder (23) is the scattering material (22). The light introduced by is diffused by changing the reflection direction in a complicated manner, and is guided to the fluorescent light emitting layer 47 made of a transparent binder (16) containing a fluorescent material (15) that emits light of a predetermined color. As described above, the light guide scattering layer 44 is formed on the light emitting diode chip 41.
In a state of high light density such as direct light from, the probability of direct incidence on the fluorescent material (15) of the fluorescent light emitting layer 47 is lowered, and incident light is dispersed and enters the fluorescent material (15). As a result, the entire fluorescent light emitting layer 47 is made to emit light, and efficient light emission is possible. Further, the fluorescent light emitting layer 47 introduces the reflected light from the scattering layer (22) of the light guide scattering layer 44 in a diversified manner and emits light in a predetermined color (1
By the way, even if some of the particles of the fluorescent material (15) have a decreased luminous efficiency, the luminous efficiency of many other particles of the fluorescent material (15) is increased, Luminous efficiency can be increased as a whole.

The light guide scattering layer 44, which directly receives the light emitted from the light emitting diode chip 41 in an adhesive state, diffuses it by changing the reflection direction of the light introduced by the scattering material (22) in a complicated manner. Any material may be used as long as it leads to the fluorescent light emitting layer 47.

Further, the light emitting diode chip 41 may be any one that emits light in any wavelength from infrared to ultraviolet region, and in particular, in the case of emitting light in the ultraviolet region or near ultraviolet region, the light emitting diode chip 41 emits light. The direct light can be efficiently converted into the emitted light without the human being recognizing it. In particular, it is suitable for those that emit white light in the ultraviolet region.

Naturally, as described above, if the element for generating near-ultraviolet light is used for the light-emitting diode chip 41 and the fluorescent material (15) is stimulated by near-ultraviolet light, the energy is increased because the wavelength is relatively short. It can be stimulated relatively strongly and efficiency can be increased. The light emitting diode chip 41 for generating near-ultraviolet light is made of a GaN material and has a wavelength of 360 to 390 nm. This wavelength band is harmless to the human body and stimulates the fluorescent material (15) of the fluorescent light emitting layer 47 with near-ultraviolet light, but any material (color) can be used as the fluorescent material (15), and It can emit colored light.

By the way, the light emitting diode chips 11 and 41 described in the above embodiments are not limited to their forms, and may be any light emitting diode that emits light at any wavelength from the infrared region to the ultraviolet region.

The light guide scattering layer 14 composed of a plurality of layers of transparent binder described in the above embodiment has been described as a case of two layers, but in the case of embodying the present invention, the larger the number of layers, the greater the number. Advantageously, but for economy, 2 to 5 layers are preferred.

When the present invention is carried out, the fluorescent material 15 which emits light of a predetermined color in the fluorescent light emitting layers 17 and 47 is made of an inorganic fluorescent material, an organic fluorescent material, a fluorescent dye, a fluorescent pigment or the like. A transparent synthetic resin or a transparent synthetic rubber material can be used for the transparent binder 16.

Further, the scattering material 22 described in the above embodiment may be one or more of aluminum oxide, titanium oxide, barium titanate, and silicon oxide. But,
A transparent synthetic resin or transparent synthetic rubber material having a property of scattering light can be used. Of course, it may be either a material that transmits a part of light or a material that completely reflects light. The concentration of the scattering material 22 is preferably in the volume range of 2 to 20% with respect to the transparent binder, but it can be adjusted together with the thickness of the light guide scattering layers 14 and 44 and is far from the above range. Can also be implemented.

[0064]

As described above, the light emitting diode lamp according to claim 1 is bonded to the light emitting diode which directly receives the light emitted from the light emitting diode which emits light in any wavelength from the infrared region to the ultraviolet region in an adhesive state. And a fluorescent light emitting layer made of a transparent binder containing a fluorescent material that emits light of a predetermined color by introducing light from the light guiding and scattering layer. , The light guide scattering layer is made to scatter by using a material having a high refractive index, or by changing the material to a plurality of layers, the probability of reflection occurring at the boundary surface is increased to scatter, and light is emitted in a predetermined color. It can be led to a fluorescent emitting layer containing a fluorescent material. Therefore, the light guide scattering layer is in a state of high light density such as direct light from the light emitting diode chip, the probability of being incident on the fluorescent material of the fluorescent light emitting layer is reduced, and the incident light is dispersed. Since the entire fluorescent light emitting layer is made to emit light, efficient light emission becomes possible.

According to a second aspect of the present invention, there is provided a light emitting diode lamp in which a light diffusing scattering material and a transparent material which are joined to the light emitting diode which directly receives light emitted from the light emitting diode which emits light in any wavelength range from infrared rays to ultraviolet rays and transparent. The light guide scattering layer comprises a light guide scattering layer made of a binder and a fluorescent light emitting layer made of a transparent binder containing a fluorescent material which introduces light from the light guide scattering layer and emits light of a predetermined color. Is diffused by changing the reflection direction of the light introduced by the scattering material intricately and led to the fluorescent light emitting layer made of a transparent binder containing a fluorescent material that emits light of a predetermined color. When the light density is high, the probability of direct incidence on the fluorescent material of the fluorescent light emitting layer is reduced, and the incident light is dispersed, so that the entire fluorescent light emitting layer emits light. And next, efficient light emission becomes possible.

Since the scattering material of the light emitting diode lamp according to claim 3 is one or more of aluminum oxide, titanium oxide, barium titanate, and silicon oxide, in addition to the effect of claim 2, The effect is that inexpensive materials can be used.

In addition to the effect of claim 2 or claim 3, the concentration of the scattering material mixed in the light emitting diode lamp according to claim 4 is set to a volume range of 2 to 20% with respect to the transparent binder. When the scattering material is mixed to this extent, the thickness error does not affect the emitted light, so that a uniform brightness and high efficiency can be obtained.

Since the thickness of the scattering layer of the light emitting diode lamp according to claim 5 is 50 to 300 μm, in addition to the effect according to any one of claims 2 to 4, Due to the mixed concentration, the light of the light emitting diode does not reach the fluorescent material by the scattering material, so that the light can efficiently arrive.

[Brief description of drawings]

FIG. 1 is a sectional view showing a schematic structure of a section of a light emitting diode lamp according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a schematic structure of a section of a light emitting diode lamp according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing a schematic structure of a section of a light emitting diode lamp according to a third embodiment of the present invention.

[Explanation of symbols]

11,41 LED chips 12 Inner resin layer 13 Outer resin layer 14,44 Light guide scattering layer 15 Fluorescent material 16,23 Transparent binder 17,47 Fluorescent layer 22 Scatterer

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shigeru Fukumoto             Aichi Prefecture Kasuga-cho, Nishikasugai-gun Ochiai character Nagahata 1             Address within Toyoda Gosei Co., Ltd. (72) Inventor Atsuo Hirano             Aichi Prefecture Kasuga-cho, Nishikasugai-gun Ochiai character Nagahata 1             Address within Toyoda Gosei Co., Ltd. (72) Inventor Kunihiro Jinme             Aichi Prefecture Kasuga-cho, Nishikasugai-gun Ochiai character Nagahata 1             Address within Toyoda Gosei Co., Ltd. (72) Inventor Kunihiko Ohara             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Toshihide Maeda             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Hiromi Kitahara             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5F041 AA07 AA11 AA12 DA43 DA56                       DA58 EE25

Claims (5)

[Claims] 1. A light emitting diode which emits light at any wavelength from infrared to ultraviolet region, and a plurality of transparent layers for light guiding and diffusion which are joined to the light emitting diode which directly receives light emitted from the light emitting diode in an adhesive state. A light emitting diode comprising a light guide scattering layer made of a binder and a fluorescent light emitting layer made of a transparent binder containing a fluorescent material that introduces light from the light guide scattering layer and emits light of a predetermined color. lamp. 2. A light emitting diode which emits light at any wavelength from infrared to ultraviolet, and a scattering material and a transparent binder which are joined to the light emitting diode for directly receiving the light emitted from the light emitting diode and which diffuses light. A light emitting diode lamp comprising: a light guide scattering layer; and a fluorescent light emitting layer made of a transparent binder containing a fluorescent material that introduces light from the light guide scattering layer and emits light of a predetermined color. 3. The light emitting diode lamp according to claim 2, wherein the scattering material is one or more of aluminum oxide, titanium oxide, barium titanate, and silicon oxide. 4. The light emitting diode lamp according to claim 2, wherein the concentration of the scattering material mixed is in a volume range of 2 to 20% with respect to the transparent binder. 5. The light guide scattering layer has a thickness of 50 to 30.
The light emitting diode lamp according to claim 2, wherein the light emitting diode lamp has a size of 0 micron.