JP2003100623A - Solution processing apparatus and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solution processing apparatus and a processing method with which a substrate, even when it is large in size, can be processed uniformly at the entire part thereof without increase of its foot print. SOLUTION: The developing process unit (DEV) 24 comprises a roller transferring mechanism 14 for transferring an LCD substrate G in a single direction almost in the horizontal attitude, a main developer discharge nozzle 51a and a sub developer discharge nozzle 51b for discharging the developer to the LCD substrate G, and a nozzle moving mechanism 60a for scanning the main and sub developer discharge nozzles 51a, 51b over the LCD substrate G. While the main and sub developer discharge nozzles 51a, 51b are scanned over the LCD substrate G by driving the nozzle moving mechanism 60a, these developer discharge nozzles 51a, 51b discharge the developer to the LCD substrate G. Accordingly, uniform developing process can be performed at the entire part of the LCD substrate G by shortening the supply period of the developer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing apparatus and a liquid processing method for performing liquid processing such as development processing on a substrate such as a glass substrate used in a liquid crystal display (LCD).

[0002]

2. Description of the Related Art In the manufacture of LCDs, after a resist film is formed on an LCD glass substrate (hereinafter referred to as "LCD substrate"), the resist film is exposed with a predetermined circuit pattern and further developed. A circuit pattern is formed on the LCD substrate by using a so-called photolithography technique. Here, for example, regarding the developing process, Japanese Patent Laid-Open No. 11-87210 discloses that a developing solution is applied to the surface of a substrate conveyed in a horizontal position to form a paddle on the substrate, and the paddle is held for a predetermined time for development. Methods and devices for proceeding the reaction are disclosed.

[0003]

However, in recent years,
There is a strong demand for large-sized LCD substrates, and even huge substrates with a side length of 1 m are emerging. When developing liquid is applied to the surface of the LCD substrate while transporting such a large LCD substrate in a horizontal posture, the portion where the developing liquid is first applied and the portion where the developing liquid is applied last come into contact with the developing liquid. The difference between the holding times becomes large, which causes unevenness in the progress of the development reaction, making it difficult to obtain a uniform development pattern on the entire LCD substrate.

The developer can be applied in a short time by increasing the transportation speed of the LCD substrate.
When the transfer speed of the substrate is increased, it is necessary to increase the distance for transferring the LCD substrate in order to transfer the LCD substrate at the same speed within the time required for the development reaction.
This creates the new problem of increasing the footprint of the device. In order to shorten the transport distance of the LCD substrate, the LCD substrate on which the paddle of the developing solution is formed must be stopped suddenly. In this case, the developing solution on the LCD substrate spills due to acceleration, and the developing The reaction cannot proceed sufficiently. Moreover, a sudden load on the LCD substrate causes a large load on the LCD substrate, which may damage the LCD substrate.

The present invention has been made in view of the above circumstances, and a liquid processing apparatus capable of performing uniform liquid processing on the entire substrate without increasing the footprint of the apparatus, even for a large substrate. And a liquid processing method.

[0006]

According to the first aspect of the present invention,
A transport mechanism that transports the substrate in one direction in a substantially horizontal posture, a treatment liquid discharge nozzle that discharges a treatment liquid onto the surface of the substrate that is transported by the transport mechanism, and the treatment liquid discharge nozzle at a predetermined speed on the substrate. A nozzle moving mechanism that moves the nozzle, and the processing liquid is applied to the substrate by discharging the processing liquid from the processing liquid discharge nozzle while moving the processing liquid discharge nozzle by the nozzle moving mechanism. A liquid processing apparatus is provided.

According to a second aspect of the present invention, the step of transporting the substrate to a liquid processing region in which the substrate is placed in a substantially horizontal posture and performing liquid processing, and stopping the transport of the substrate in the liquid processing region or moving the substrate A step of making the transfer speed slower than the transfer speed of the substrate to the liquid processing region, and moving the processing liquid discharge nozzle for applying the processing liquid onto the substrate horizontally on the substrate from the processing liquid discharge nozzle onto the substrate. And a step of applying the treatment liquid onto the substrate by discharging the treatment liquid.

According to a third aspect of the present invention, there is provided a liquid processing apparatus for performing a developing process on a substrate which has been subjected to an exposure process, and a transfer mechanism for transferring the substrate in one direction in a substantially horizontal posture,
A developing solution discharge nozzle for discharging a developing solution onto the surface of the substrate transported by the transport mechanism, and a nozzle moving mechanism for moving the developing solution discharge nozzle on the substrate in a direction opposite to the transport direction of the substrate at a predetermined speed. A liquid, wherein the developing solution is applied to the substrate by discharging the developing solution from the developing solution discharge nozzle while moving the developing solution discharge nozzle by the nozzle moving mechanism. A processing device is provided.

According to a fourth aspect of the present invention, there is provided a liquid processing method for developing a substrate which has been subjected to an exposure process, wherein the substrate is conveyed to a developing liquid application region for applying the developing liquid in a substantially horizontal posture. And a step of stopping the transportation of the substrate in the developing solution application area or making the transportation speed of the substrate slower than the transportation rate of the substrate to the developing solution application area, and applying the developing solution to the substrate. A step of ejecting the developing solution from the developing solution ejecting nozzle while horizontally moving the developing solution ejecting nozzle on the substrate to puddle the developing solution on the substrate; and a substrate on which the developing solution is impregnated. And a step of transporting the developing solution to a drainage processing region for draining the developer.

According to the liquid processing apparatus and the liquid processing method according to the first to fourth aspects of the present invention, the processing liquid is applied to the substrate in a short time by moving the processing liquid discharge nozzle at a predetermined speed. be able to. This makes it possible to perform uniform liquid processing on the entire substrate. In addition, since it is not necessary to convey the substrate coated with the processing liquid at high speed, it is not necessary to stop the substrate suddenly.This causes the processing liquid to spill over the substrate and the development reaction may not proceed, or due to the stress due to the sudden stop. Problems such as distortion of the substrate and damage due to overrun of the substrate do not occur. Further, since the space required for transporting the substrate may be the same as the conventional one, an increase in the footprint of the device is suppressed.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Here, in the present embodiment, the LCD according to the present invention is subjected to the exposure processing.
A case where the present invention is applied to a development processing unit (DEV) for developing a substrate will be described as an example. FIG. 1 is a plan view showing a schematic configuration of a resist coating / development processing system 100 that includes a development processing unit (DEV) according to an embodiment of the present invention and continuously performs processing from resist film formation to development. Is.

This resist coating / developing system 10
Reference numeral 0 is provided with a cassette station (loading / unloading section) 1 for mounting a cassette C containing a plurality of LCD substrates G, and a plurality of processing units for performing a series of processes including resist coating and development on the LCD substrate G. A processing station (processing section) 2 and an interface station (interface section) 3 for transferring the LCD substrate G between the exposure apparatus 4 and the cassette station 1 and the cassette station 1 at both ends of the processing station 2. An interface station 3 is arranged. In FIG. 1, a resist coating / developing system 1
The longitudinal direction of 00 is the X direction, and the direction orthogonal to the X direction on the plane is the Y direction.

The cassette station 1 includes a mounting table 9 on which the cassettes C can be arranged side by side in the Y direction, and a transfer device 11 for loading and unloading the LCD substrate G between the processing station 2. The cassette C is transported between the table 9 and the outside. The transfer device 11 has a transfer arm 11a and can move on a transfer path 10 provided along the Y direction, which is the arrangement direction of the cassettes C. The transfer arm 11a allows the cassette C and the processing station 2 to be moved.
The LCD substrate G is carried in and out between and.

The processing station 2 basically has two parallel transfer lines A for transferring the LCD substrate G extending in the X direction.
・ B has a scrubbing cleaning unit (SCR) 21 from the cassette station 1 side to the interface station 3 along the transfer line A, and
Thermal processing unit section 26, resist processing unit 23 and second thermal processing unit section 2 of
7 are arranged.

A second thermal processing unit section 27, a developing processing unit (DEV) 24, an i-ray UV irradiation unit (i-) from the interface station 3 side toward the cassette station 1 along the transfer line B. UV) 25 and a third thermal processing unit section 28 are arranged. An excimer UV irradiation unit (e-UV) 22 is provided on a part of the scrub cleaning processing unit (SCR) 21. The excimer UV irradiation unit (e-UV) 22 is provided to remove organic substances on the LCD substrate G prior to the scrubber cleaning, and the i-ray UV irradiation unit (i-UV) 25 is used for decolorization processing for development. It is provided in.

Scrub cleaning unit (SCR) 21
In this, the cleaning process and the drying process are performed while the LCD substrate G is transported in a substantially horizontal posture. As will be described later in detail, the developing processing unit (DEV) 24 is also adapted to perform the developing solution application, the developing solution cleaning after the development, and the drying processing while the LCD substrate G is transported substantially horizontally. These scrub cleaning processing unit (SCR) 21 and development processing unit (DEV)
In 24, the LCD substrate G is conveyed by, for example, roller conveyance or belt conveyance, and the carry-in port and the carry-out port of the LCD substrate G are provided on opposite short sides. The LCD substrate G is continuously transported to the i-ray UV irradiation unit (i-UV) 25 by a mechanism similar to the transport mechanism of the development processing unit (DEV) 24.

In the resist processing unit 23, the resist solution is dropped on the LCD substrate G held substantially horizontally and L
By rotating the CD substrate G at a predetermined rotation speed, the resist solution is spread over the entire LCD substrate G to form a resist film, and a resist coating processing device (CT) 23a and the resist film formed on the LCD substrate G are decompressed. A reduced-pressure drying device (VD) 23b for drying and a peripheral edge resist removing device (ER) 23c for removing excess resist adhering to the peripheral edge of the LCD substrate G by a solvent ejection head capable of scanning the four sides of the LCD substrate G are in that order. It is arranged. In the resist processing unit 23, the LCD substrate G is provided between the resist coating processing device (CT) 23a, the reduced pressure drying device (VD) 23b, and the peripheral edge resist removing device (ER) 23c.
Is provided with a transfer arm.

First thermal processing unit section 26
Has two thermal processing unit blocks (TB) 31 and 32 configured by laminating thermal processing units for performing thermal processing on the LCD substrate G. The thermal processing unit block (TB) 31 Is a scrub cleaning unit (SC
R) is provided on the 21 side and the thermal processing unit block (T
B) 32 is provided on the resist processing unit 23 side. These two thermal processing unit blocks (TB) 3
A first transfer device 33 is provided between the parts 1 and 32.

As shown in the side view of the first thermal processing unit section 26 in FIG. 2, the thermal processing unit block (TB) 31 includes a pass unit (PASS) 61 for transferring the LCD substrate G in order from the bottom. , Two dehydration bake units (DHP) 62 and 63 for performing a dehydration bake process on the LCD substrate G, and an adhesion treatment unit (AD) 64 for performing a hydrophobic treatment on the LCD substrate G.
Are laminated in four stages, and the thermal processing unit block (TB) 32 is a pass unit (PASS) 65 for transferring the LCD substrate G in order from the bottom.
, Two cooling units (COL) 66 and 67 for cooling the LCD substrate G, and an adhesion processing unit (AD) 68 for performing a hydrophobic treatment on the LCD substrate G.
Are laminated in four stages.

The first transfer device 33 includes a pass unit (P
Scrub cleaning processing unit (S
The CR substrate 21 receives the LCD substrate G, the LCD substrate G is carried in and out between the thermal processing units, and the LCD substrate G is transferred to the resist processing unit 23 via the pass unit (PASS) 65.

The first transfer device 33 includes a guide rail 91 extending vertically, an elevating member 92 elevating and lowering along the guide rail 91, a base member 93 rotatably provided on the elevating member 92, and a base member. A substrate holding arm 94 that is provided so as to be able to move forward and backward on 93 and holds the LCD substrate G.
And have. The elevating member 92 is moved up and down by a motor 95, the base member 93 is swung by a motor 96, and the substrate holding arm 94 is moved back and forth by a motor 97. As described above, the first transfer device 33 can be moved up and down, moved back and forth, and swung, and can access any of the thermal processing unit blocks (TB) 31 and 32.

Second thermal processing unit section 27
Has two thermal processing unit blocks (TB) 34 and 35 formed by stacking thermal processing units that perform thermal processing on the LCD substrate G. The thermal processing unit block (TB) 34 Is provided on the resist processing unit 23 side, and the thermal processing unit block (TB) 35 is provided on the developing processing unit (DEV) 24 side. And these two thermal processing unit blocks (TB) 3
A second transfer device 36 is provided between the parts 4 and 35.

As shown in the side view of the second thermal processing unit section 27 in FIG. 3, the thermal processing unit block (TB) 34 is a pass unit (PASS) 69 for transferring the LCD substrate G in order from the bottom. And three pre-baking units (PREBAKE) 70, 71, 72 for pre-baking the LCD substrate G are stacked in four stages, and the thermal processing unit block (T
B) 35 is a pass unit (PASS) 73 for transferring the LCD substrate G in order from the bottom, a cooling unit (COL) 74 for cooling the LCD substrate G, and two pre-baking processes for pre-baking the LCD substrate G. The units (PREBAKE) 75 and 76 are laminated in four layers.

The second transfer device 36 includes a pass unit (P
Receiving the LCD substrate G from the resist processing unit 23 via the (ASS) 69, loading / unloading the LCD substrate G between the thermal processing units, and a pass unit (PASS) 73.
LCD to development processing unit (DEV) 24 via
The substrate G is delivered, and the LCD substrate G is delivered to and received from an extension / cooling stage (EXT / COL) 44 which is a substrate delivery unit of the interface station 3 described later. In addition,
The second transfer device 36 has the same structure as the first transfer device 33, and has a thermal processing unit block (TB) 34.
Access to any of the 35 units.

Third thermal processing unit section 28
Has two thermal processing unit blocks (TB) 37 and 38 configured by laminating thermal processing units for performing thermal processing on the LCD substrate G. The thermal processing unit block (TB) 37 Is a development processing unit (DEV) 24
Provided on the side, thermal processing unit block (TB) 38
Is provided on the cassette station 1 side. And these two thermal processing unit blocks (TB) 3
A third transfer device 39 is provided between 7 and 38.

As shown in the side view of the third thermal processing unit section 28 in FIG. 4, the thermal processing unit block (TB) 37 is a pass unit (PASS) for transferring the LCD substrate G in order from the bottom. 77 and LCD substrate G
It has a configuration in which three post-baking units (POBAKE) 78, 79, and 80 that perform post-baking processing are stacked in four layers. The thermal processing unit block (TB) 38 includes a post bake unit (POBAKE) 81 and a pass cooling unit (PASS / PASS) for transferring and cooling the LCD substrate G in order from the bottom.
COL) 82 and two post-bake units (POBAKE) for performing post-bake processing on the LCD substrate G.
83 and 84 are laminated in four layers.

The third transport device 39 includes a pass unit (P
I-line UV irradiation unit (i-U)
V) Receiving the LCD substrate G from 25, carrying in and out the LCD substrate G between the thermal processing units, and passing the LCD substrate G to the cassette station 1 via the pass / cooling unit (PASS / COL) 82. To do. The third transfer device 39 also has the same structure as the first transfer device 33, and the thermal processing unit block (TB) 3
Both 7 and 38 units are accessible.

At the processing station 2, as described above,
The processing units and the transfer devices are arranged so as to form the transfer lines A and B in a row and basically in the order of processing, and the space 4 is provided between the transfer lines A and B.
0 is provided. A shuttle (substrate mounting member) 41 is provided so as to reciprocate in this space 40.
The shuttle 41 is configured to be able to hold the LCD substrate G, and is connected between the transfer lines A and B via the shuttle 41.
The CD substrate G is delivered. The delivery of the LCD substrate G to and from the shuttle 41 is performed by the first to third transfer devices 33, 36, 39.

The interface station 3 has a transfer device 42 for loading and unloading the LCD substrate G between the processing station 2 and the exposure device 4, a buffer stage (BUF) 43 for arranging a buffer cassette, and a cooling function. It has an extension / cooling stage (EXT / COL) 44 which is a substrate transfer part,
The external device block 45, in which a titler (TITLER) and a peripheral exposure device (EE) are vertically stacked, is the transport device 4.
It is provided adjacent to 2. The transfer device 42 includes a transfer arm 42 a, and the LCD arm G is carried in and out between the processing station 2 and the exposure device 4 by the transfer arm 42 a.

In the resist coating / development processing system 100 having the above-described structure, first, the LCD in the cassette C arranged on the mounting table 9 of the cassette station 1.
The substrate G is directly carried into the excimer UV irradiation unit (e-UV) 22 of the processing station 2 by the transfer device 11, and scrub pretreatment is performed. Then, the LCD device G is transferred to the scrub cleaning processing unit (SC
R) 21 is carried in and scrubbed. After the scrub cleaning process, the LCD substrate G is, for example, by roller conveyance, the pass unit (PASS) of the thermal processing unit block (TB) 31 belonging to the first thermal processing unit section 26.
It is carried out to 61.

The LCD substrate G arranged in the pass unit (PASS) 61 is first of all dehydrated bake unit (DHP) 62.6 of the thermal processing unit block (TB) 31.
In order to improve the fixability of the resist after being conveyed to any of No. 3 and heat-treated, and then conveyed to any of the cooling units (COL) 66 and 67 of the thermal treatment unit block (TB) 32 and cooled. The thermal processing unit block (TB) 31 includes an adhesion processing unit (AD) 64 and a thermal processing unit block (TB).
It is conveyed to one of the 32 adhesion processing units (AD) 68, and is subjected to the adhesion processing (hydrophobicization processing) by the HMDS there. After that, the LCD substrate G
It is transported to one of the cooling units (COL) 66 and 67, cooled, and further transported to the pass unit (PASS) 65 of the thermal processing unit block (TB) 32. The carrying process of the LCD substrate G when performing such a series of processes is all performed by the first carrying device 33.

The LCD substrate G arranged in the pass unit (PASS) 65 is carried into the resist processing unit 23 by the transfer arm of the resist processing unit 23.
The LCD substrate G is a resist coating processor (CT) 23a.
In the above, after the resist solution is spin-coated, it is transported to the reduced pressure drying device (VD) 23b and dried under reduced pressure, and further transported to the peripheral edge resist removing device (ER) 23c and the LCD.
Excess resist on the peripheral edge of the substrate G is removed. After the removal of the peripheral edge resist, the LCD substrate G is received by the transfer arm from the resist processing unit 23 to the pass unit (PASS) 69 of the thermal processing unit block (TB) 34 belonging to the second thermal processing unit section 27. Passed.

The LCD substrate G arranged in the pass unit (PASS) 69 is subjected to the prebaking units (PREBAKE) 70.71.72 of the thermal processing unit block (TB) 34 and the thermal processing by the second transfer device 36. Pre-bake unit (P) of unit block (TB) 35
REBAKE) 75/76 and then pre-baked, then thermal processing unit block (T
B) It is conveyed to the cooling unit (COL) 74 of 35 and cooled to a predetermined temperature. Then, the second transfer device 3
6, further thermal processing unit block (TB) 3
5 is conveyed to the pass unit (PASS) 73.

After that, the LCD substrate G is transferred to the second transfer device 3
6 is carried to the extension / cooling stage (EXT / COL) 44 of the interface station 3 and the peripheral exposure device (E) of the external device block 45 is carried by the carrying device 42 of the interface station 3.
E) and the exposure for removing the peripheral resist is carried out, and then the carrier device 42 carries it to the exposure device 4 where the resist film on the LCD substrate G is exposed to form a predetermined pattern. In some cases, the LCD substrate G is housed in the buffer cassette on the buffer stage (BUF) 43 and then transferred to the exposure device 4.

After the exposure is completed, the LCD substrate G is carried into the upper TITLER of the external device block 45 by the transport device 42 of the interface station 3 and predetermined information is written on the LCD substrate G, and then the extension cooling is performed. Stage (EXT / COL) 44
Placed on. The LCD substrate G is transferred to the extension / cooling stage (EXT) by the second transfer device 36.
COL) 44 to the pass unit (PASS) 73 of the thermal processing unit block (TB) 35 belonging to the second thermal processing unit section 27.

The LCD substrate G is moved from the pass unit (PASS) 73 to the development processing unit (D) by operating, for example, a roller conveyance mechanism extended from the pass unit (PASS) 73 to the development processing unit (DEV) 24.
It is carried into the EV) 24, where the development processing is performed. This developing process step will be described later in detail.

After the development processing is completed, the LCD substrate G is transferred from the development processing unit (DEV) 24 to a continuous transfer mechanism, for example, an i-line UV irradiation unit (i-UV) 25 by a roller transfer.
Then, the LCD substrate G is subjected to decolorization processing. After that, the LCD substrate G is transferred to the i-ray UV irradiation unit (i
-UV) 25 is carried out to the pass unit (PASS) 77 of the thermal processing unit block (TB) 37 belonging to the third thermal processing unit section 28 by the roller transport mechanism.

The LCD substrate G arranged in the pass unit (PASS) 77 is subjected to the post-baking unit (POBAKE) 78/79/80 of the thermal processing unit block (TB) 37 and the thermal processing by the third transfer device 39. Post bake unit (P) of unit block (TB) 38
OBAKE) 81.83.84 and then post-baked, and then the thermal cooling unit block (TB) 38 pass / cooling unit (PASS).
・ COL) 82 and then cooled to a predetermined temperature,
A predetermined cassette C placed in the cassette station 1 by the transfer device 11 of the cassette station 1.
Housed in.

Next, the structure of the development processing unit (DEV) 24 will be described in detail. FIG. 5 is a side view showing a schematic structure of the development processing unit (DEV) 24, and FIG. 6 is a plan view. The development processing unit (DEV) 24 includes an introduction zone 24a, a first developing solution supply zone 24b, a second developing solution supply zone 24c, a developing solution removal zone 24d, a rinse zone 24e, and a drying zone 24f.
The introduction zone 24a is a thermal processing unit block (TB)
Adjacent to the pass unit (PASS) 73 of 35, the drying zone 24f is adjacent to the i-ray UV irradiation unit (i-UV) 25.

Pass unit (PASS) 73 and i-line UV
Between the irradiation unit (i-UV) 25, the roller 17 is rotated by driving a motor or the like.
Roller transport mechanism 1 for transporting the upper LCD substrate G in a predetermined direction
4 is provided, and the LCD substrate G is moved to the pass unit (PAS) by operating the roller transport mechanism 14.
The S) 73 can be conveyed to the i-ray UV irradiation unit (i-UV) 25 through the development processing unit (DEV) 24. A predetermined number of rollers 17 are provided in the transport direction of the LCD substrate G and in a direction perpendicular to the transport direction so that the LCD substrate G is not easily bent. The roller transport mechanism 14 is not shown in FIG.

In the development processing unit (DEV) 24, as shown in FIG. 5, the roller transport mechanism 14 is divided into three regions, and each region can be independently driven. The pass unit (PASS) 73 and the introduction zone 24a convey the LCD substrate G by driving the first motor 15a. In addition, the first developer supply zone 24b
The second developing solution supply zone 24c and the developing solution removal zone 24d are driven by the second motor 15b so that the
The D substrate G is transported. Further, the rinsing zone 24e and the drying zone 24f are driven by the third motor 15c to drive the LC
The D substrate G is transported. Such divisional driving of the roller transport mechanism 14 can be performed, for example, for each zone constituting the development processing unit (DEV) 24.

The pass unit (PASS) 73 is provided with a lifting pin 16 which can be lifted and lowered. With the substrate holding arm 94 of the second transfer device 36 holding the LCD substrate G entering the pass unit (PASS) 73, the lifting pin 16
When is raised, the LCD substrate G is transferred from the substrate holding arm 94 to the elevating pins 16. Then, when the substrate holding arm 94 is withdrawn from the pass unit (PASS) 73 and then the lifting pins 16 are lowered, the LCD substrate G is placed on the rollers 17 in the pass unit (PASS) 73. By driving the first motor 15a, the LCD
The substrate G is carried out from the pass unit (PASS) 73 to the introduction zone 24a.

The introduction zone 24a has a pass unit (PA
SS) 73 and the first developing solution supply zone 24b are provided as a buffer area, and the introduction zone 24a is developed from the first developing solution supply zone 24b to the pass unit (PASS) 73. It prevents the pass unit (PASS) 73 from being contaminated by the scattering of the liquid.

The first developing solution supply zone 24b is a zone for carrying out the first developing solution puddle formation (paddle formation) on the LCD substrate G conveyed from the introduction zone 24a.
Developer supply mechanism 60 for applying a developer to the D substrate G
Is provided.

FIG. 7 is a front view of the structure of the first developer supply zone 24b as seen from the upstream side in the transport direction of the LCD substrate G. The developing solution supply mechanism 60 includes two nozzles, a main developing solution ejecting nozzle 51a and an auxiliary developing solution ejecting nozzle 51b (hereinafter referred to as developing nozzles 51a and 51b), which eject the developing solution onto the LCD substrate G, and these two nozzles. A nozzle fixing member 55 for fixing the nozzles of the book, a nozzle holding member 56 for holding the nozzle fixing member 55, an elevating device 57 for elevating the nozzle holding member 56, and a nozzle movement for scanning the developing nozzles 51a and 51b in the X direction. Mechanism 60a.

The nozzle moving mechanism 60a includes an arch-shaped arm 58 for holding the lifting device 57 and a guide rail 59a.
A drive mechanism 46 for scanning the arched arm 58 along the guide rail 59a, a rail holding member 59b for holding the guide rail 59a, and a rail holding member 59.
It has a guide fixing base 59c for fixing b. Further, the developing solution supply mechanism 60 includes the lifting device 57 and the drive mechanism 4.
6 has a control mechanism 47 for controlling the operation, and the control mechanism 47 can control the discharge amount of the developing solution from the developing nozzles 51a and 51b and the start and stop of the discharge. .

The configuration of the roller transport mechanism 14 is also shown in FIG. That is, the roller transport mechanism 14 is L
A pivot 19 that extends in the transport direction (X direction) of the CD substrate G and that rotates around the X axis by a second motor 15b (not shown in FIG. 7; see FIG. 5); A first gear 19a that rotates around, a pivot 18 that is long in the width direction (Y direction) of the LCD substrate G and has rollers 17 attached at predetermined intervals, and is attached to one end of the pivot 18 so as to mesh with the first gear 19a. And a second gear 18a for converting rotation of the first gear 19a about the X axis into rotation about the Y axis, and is attached to the other end of the pivot 18, and rotates via the pivot 18 by the rotation of the second gear 18a. 3rd gear 18b, X
A pivot 19 'that is rotatable about its axis and a fourth gear 19b that is attached to the pivot 19' so as to mesh with the third gear 18b and that converts the rotation of the third gear 18b about the Y axis into rotation about the X axis. And have.

In the roller transport mechanism 14, a drive unit for rotating the pivot shaft 18 has a pivot shaft 19, a first gear 19a,
The second gear 18a, the second motor 15b, and the third
The gear 18 b, the pivot 19 ′, and the fourth gear 19 b play a role of smoothly rotating the pivot 18 and supporting the pivot 18.

FIG. 8 is a perspective view showing the structure of the main developing solution discharge nozzle 51a. The main developing solution discharge nozzle 51a is an LC
It has a structure long in the width direction (Y direction) of the D substrate G.
At the center of the upper portion of the main developing solution discharge nozzle 51a, a developing solution supply pipe 4 is provided for sending the developing solution to the main developing solution discharge nozzle 51a.
9a is provided, and at its lower end, the developing solution can be discharged in a substantially strip shape from a discharge port 49b formed along the longitudinal direction. Sub developer discharge nozzle 5
1b has the same structure as the main developing solution discharge nozzle 51a.

The developing nozzles 51a and 51b are held in parallel at a predetermined interval by a nozzle fixing member 55 so that the longitudinal direction thereof coincides with the Y direction. Also, the lifting device 57
By driving the nozzle holding member 56 up and down, the developing nozzles 51a and 51b can be moved up and down.
As a result, the gap between the ejection ports 49b of the developing nozzles 51a and 51b and the surface of the LCD substrate G can be adjusted. Further, fitting portions 58 fitted to the guide rails 59a are provided at both ends of the arch-shaped arm 58.
a is formed, and the arch-shaped arm 58 is slidable in the X direction which is the longitudinal direction of the guide rail 59a by the drive mechanism 46.

In the developing solution supply mechanism 60, the developing nozzles 51a and 51b are ejected from the developing nozzles 51a and 51b to the LCD substrate G so as to have a substantially strip-shaped developing solution which is long in the Y direction.
・ By scanning 51b in the X direction (that is, sliding the arched arm 58 in the X direction), L
The surface of the CD substrate G can be filled with a developing solution.

In order to uniformly perform the developing process on the entire LCD substrate G, it is necessary to apply the developing solution in an amount necessary for the developing reaction on the LCD substrate G in a short time and uniformly. By using the two developing nozzles 51a and 51b, a predetermined amount of the developing solution can be stably ejected in a short time. The scanning speed of the developing nozzles 51a and 51b is preferably 100 mm / sec or more and 500 mm / sec or less.

When the scanning speed of the developing nozzles 51a and 51b is less than 100 mm / sec, the developing nozzle 51
Since the same processing can be performed by changing the transport speed of the LCD substrate G without scanning the a / 51b, the merit of scanning the developing nozzles 51a / 51b cannot be found. On the other hand, if it is greater than 500 mm / sec, problems such as a portion where the developer cannot be piled up due to the liquid piling speed being too fast and the developer easily spilling from the LCD substrate G occur. Development nozzle 51a
If the scan speed of 51b is within this range, the LCD substrate G
Even when considering the length of the developing solution, it is possible to carry out the solution piling of the developing solution without causing a problem of the time difference between the start and the end of the piling.

Further, the number of times of puddle on the LCD substrate G is 1
The number of times is not limited to one, and it is also possible to perform the puddle treatment a plurality of times. For example, it is possible to perform the puddle on the LCD substrate G once, then raise the developing nozzles 51a and 51b, return it to the original position, and perform the puddle operation again.

FIG. 9A shows the developing nozzle 5 shown in FIG.
FIG. 9B is a side view showing the arrangement of 1a and 51b in more detail, and FIG. 9B is an explanatory view showing a state in which the developing nozzles 51a and 51b are scanned while discharging the developing solution from the developing nozzles 51a and 51b. is there.

In the developer supply mechanism 60, when the developer is poured on the surface of the LCD substrate G, the arch-shaped arm 58 is used.
Is scanned in the direction opposite to the transport direction of the LCD substrate G. The main developing solution discharge nozzle 51a is formed so that the developing solution is applied to the LCD substrate G first from the main developing solution discharge nozzle 51a.
Is disposed on the upstream side in the substrate transport direction, and the sub-developing solution discharge nozzle 51b is disposed on the downstream side in the substrate transport direction. In order to promote the development reaction, the developing solution is discharged from the sub developing solution discharging nozzle 51b to the developing solution discharged from the main developing solution discharging nozzle 51a and accumulated on the LCD substrate G to supplement the developing solution. Sufficient developer is supplied to the LCD substrate G, whereby the developing time can be shortened and the developing accuracy can be improved.

When the developing nozzles 51a and 51b are scanned, the lower end of the sub-developing solution discharging nozzle 51b ejects the developing solution already discharged onto the LCD substrate G by the main developing solution discharging nozzle 51a in the scanning direction of the developing nozzles 51a and 51b. The gap width (gap) D between the sub-developing solution discharge nozzle 51b and the LCD substrate G is set so as not to be pushed out (see FIG. 9B). It is preferable to set it wider than d.

For example, the gap width d is 1.5 mm to 2.5 m.
m, and the gap width D is 3 mm to 5 mm. The gap width d is 1.
When it is less than 5 mm, the main developing solution discharge nozzle 51a
It becomes a little difficult to align. Further, the gap width d is set to 2.
If the thickness exceeds 5 mm, bubbles may be entrained in the developing solution when the developing solution is discharged, and the bubbles may adhere to the surface of the LCD substrate G, resulting in defective development at that portion. If the gap width D is more than 5 mm, the developer already applied to the LCD substrate G is agitated greatly, which causes a problem that the line width uniformity is deteriorated. It should be noted that by enclosing the distance from the surface of the developing solution on the LCD substrate G by the main developing solution discharge nozzle 51a so as not to exceed 1 mm, it is possible to prevent the inclusion of bubbles.

The developing nozzles 51a and 51b are inclined at an angle θ of not less than 5 degrees and not more than 15 degrees with respect to the vertical direction so that the developing solution is discharged obliquely downward and rearward in the scanning direction during scanning by the nozzle moving mechanism 60a. Is held in

For example, from the main developing solution discharge nozzle 51a to L
The developing solution discharged onto the CD substrate G is the main developing solution discharge nozzle 5
When it is easy to spread forward in the scanning direction of 1a, the impact of the developer discharged from the main developer discharge nozzle 51a onto the LCD substrate G on the LCD substrate G (the momentum of the developer hitting the LCD substrate G) is LCD substrate G
Since the developing solution applied on the LCD substrate G is applied from above, the developing solution is weakened as compared with the case where the developing solution is directly discharged onto the LCD substrate G. For this reason, there arises a problem that the developing accuracy is lowered.

By tilting the main developing solution discharge nozzle 51a by a predetermined angle θ, the main developing solution discharge nozzle 51a
It becomes difficult for the developer discharged from the nozzle to spread forward in the scanning direction of the developing nozzles 51a and 51b. As a result, the impact of the developing solution ejected from the main developing solution ejecting nozzle 51a is directly applied to the LCD substrate G, so that the developing accuracy can be improved.

Since the developing solution is newly ejected from the developing solution ejected from the main developing solution ejection nozzle 51a from the auxiliary developing solution ejection nozzle 51b, it is originally ejected from the auxiliary developing solution ejection nozzle 51b. The developing solution is the main developing solution discharge nozzle 51.
Compared with the case a, the LCD substrate G is not significantly impacted. The sub-developer discharge nozzle 51 b prevents the developer previously applied to the LCD substrate G from being largely stirred by the developer discharged from the sub-developer discharge nozzle 51 b.
It is preferable that b is also inclined by a predetermined angle θ.

In this way, the first developer supply zone 24
In b, since the developing solution is discharged onto the LCD substrate G while scanning the developing nozzles 51a and 51b, it is not necessary to convey the LCD substrate G at high speed. This allows the LCD
It is possible to prevent the occurrence of an accident in which the LCD substrate G is distorted or damaged due to an overrun during the transportation of the substrate G or a sudden stop of the transportation. Also, after supplying the developer, the LCD
Since it is not necessary to stop the substrate G suddenly, the LCD substrate G
It is possible to prevent spillage of the developing solution that has been puddle on the surface, and it is possible to use the developing solution efficiently.

In the first developing solution supply zone 24b, LC
It is possible to carry out the developing solution puddle while conveying the D substrate G at a low speed or by stopping the LCD substrate G.
When the method in which the D substrate G is stopped and the developing solution is applied is used, the process can be performed in a particularly stable state, whereby the line width uniformity can be improved.

During the transportation of the LCD substrate G on which the developing solution is piled up in the first developing solution supply zone 24b to the developing solution removal zone 24d, the developing solution may spill out from the LCD substrate G. In the second developing solution supply zone 24c, the developing solution is newly replenished to the LCD substrate G in order to prevent the developing reaction from being stopped due to the developing solution spilling from the LCD substrate G during the transportation of the LCD substrate. can do.

In the second developing solution supply zone 24c, a developing solution replenishing nozzle 51c having a structure similar to that of the main developing solution discharge nozzle 51a is provided with an arched arm 58 so that its longitudinal direction is the Y direction. It is fixed to a stationary arm (not shown) having a similar structure. From the developing solution replenishing nozzle 51c, a predetermined amount of developing solution is ejected onto the LCD substrate G transported by the roller transporting mechanism 14 in a substantially strip shape that is long in the Y direction, thus replenishing the developing solution spilled from the LCD substrate G during transportation. To be done.

In the developer removing zone 24d, a posture changing mechanism (not shown) for converting the LCD substrate G into an oblique posture and a rinse liquid (for example, pure water) for washing the developer on the surface of the LCD substrate G are used. A rinse liquid discharge nozzle 52 for discharging is provided. The development reaction on the LCD substrate G is performed while being transported from the first developer supply zone 24b to the developer removal zone 24d. In the developing solution removal zone 24d, the LCD substrate G is converted into an oblique posture, the developing solution on the LCD substrate G is poured down, and the LCD is further removed.
With the substrate G held in an oblique posture, pure water is ejected onto the surface of the LCD substrate G while scanning the rinse liquid ejection nozzle 52 along the surface of the LCD substrate G from the upper end to the lower end of the LCD substrate G. As a result, the developing solution on the LCD substrate G is washed away.

The rinse liquid discharge nozzle 52 is, for example, 500 mm so that the developer can be washed out in a short time.
You can scan at a speed of / sec. Actually, by setting the scan speed of the rinse liquid discharge nozzle 52 to be between 100 mm / sec and 300 mm / sec, and more preferably between 200 mm / sec and 300 mm / sec, the line width uniformity of the development pattern is improved. To be As the rinse liquid discharge nozzle 52, the developing nozzles 51a, 51
As in the case of b, a structure in which the rinse liquid can be ejected in the form of a film is preferably used, and this makes it possible to prevent development unevenness from occurring.

A rinse nozzle 53 for discharging a rinse liquid such as pure water toward the LCD substrate G is attached to the rinse zone 24e. In the rinse zone 24e,
While transporting the LCD substrate G at a predetermined speed, a rinse liquid is discharged onto the front surface and the back surface of the LCD substrate G to remove and wash the developing solution adhering to the LCD substrate G. The rinse nozzle 53 has a shape longer than the width of the LCD substrate G, and can discharge the rinse liquid over the entire width direction of the LCD substrate G.

An air nozzle (air knife) 54 for injecting a drying gas such as nitrogen gas at a predetermined wind pressure is provided in the drying zone 24f where the LCD substrate G that has passed through the rinse zone 24e is conveyed. In the drying zone 24f, while transporting the LCD substrate G at a predetermined speed, a drying gas is sprayed on the front surface and the back surface of the LCD substrate G, so that the LCD substrate G
The rinse liquid adhering to is blown off to dry the LCD substrate G. The air nozzle 54 has a shape longer than the width of the LCD substrate G, and is capable of discharging the dry gas over the entire width direction of the LCD substrate G.
The LCD substrate G on which the drying process has been completed has a roller transport mechanism 14
Is transported to the i-ray UV irradiation unit (i-UV) 25.

Next, the development processing steps in the development processing unit (DEV) 24 will be described. FIG. 10 is an explanatory diagram (flow chart) showing the outline of the development processing step.
The LCD substrate G carried into the pass unit (PASS) 73 is carried into the first developing solution supply zone 24b through the introduction zone 24a by the roller transport mechanism 14 (step 1). The transport speed of the LCD substrate G from the pass unit (PASS) 73 to the first developer supply zone 24b is, eg, 65 mm / sec.

In the first developing solution supply zone 24b, with the LCD substrate G stopped at a predetermined position (step 2), the developing nozzles 51a and 51b are scanned at a high speed of 240 mm / sec.
The developing solution is discharged onto the surface of the CD substrate G to fill the developing solution (step 3). By setting the LCD substrate G in the stopped state, the drive control of the developing nozzles 51a and 51b becomes easy. Further, the developing solution can be stably puddle-shaped on the LCD substrate.

FIG. 11 is an explanatory diagram showing a scanning mode of the developing nozzles 51a and 51b. It is assumed that the developing nozzles 51a and 51b are scanned from the right side to the left side of FIG. 11, the right end of the LCD substrate G shown in FIG. 11 is the “fluid start end”, and the left end is the “fluid end end”. After the height positions of the developing nozzles 51a and 51b are adjusted by the elevating device 57, the driving mechanism 46 is operated to move the developing nozzles 51a and 51b.
Start scanning of a.51b. The main developing solution discharge nozzle 51a is located at a predetermined position on the right side from the puddle start end, for example, a position 1 cm on the right side of the puddle start end (hereinafter referred to as “ejection start position”).
When it reaches the above), the discharge of the developing solution from the main developing solution discharge nozzle 51a is started (step 3a). As a result, it is possible to reliably puddle the developer from the puddle start end. Similarly, when the sub-developing solution ejection nozzle 51b reaches the ejection start position, ejection of the developing solution from the sub-developing solution ejection nozzle 51b is started (step 3b).

Then, on the LCD substrate G, the developing nozzle 51
By scanning a.51b, the developing solution is placed on the entire LCD substrate G (step 3c). At this time,
As described with reference to (a) and (b), when the developing nozzles 51a and 51b scan the LCD substrate G, the developing solution is discharged obliquely below and rearward of the developing nozzles 51a and 51b. It Further, the sub-developing solution discharge nozzle 51b causes the developing solution applied on the LCD substrate G by the main developing solution discharge nozzle 51a to develop into the developing nozzles 51a and 51b.
The developing solution is applied to the LCD substrate G without being scratched in the scanning direction.

The discharge of the developing solution to the LCD substrate G may be continued until the sub-developing solution discharge nozzle 51b passes the end of the puddle, but preferably, the main developing solution discharge nozzle 51a reaches the end of the puddle. Then, the discharge of the developing solution from the main developing solution discharge nozzle 51a is stopped (step 3d), and when the sub-developing solution discharging nozzle 51a reaches the end of the heap, the discharge of the developing solution from the sub-developing solution discharging nozzle 51b is stopped. (Step 3e), the developing nozzles 51a and 51b are moved so that the lower end of the sub-developing liquid discharge nozzle 51b comes close to or abuts on the liquid heap end of the LCD substrate G (Step 3f).
By moving the sub-developing solution discharge nozzle 51b to such a position, the developing solution applied on the LCD substrate G is
Spilling from the end of the puddle is prevented. When the sub-developing solution discharge nozzle 51b is brought into contact with the LCD substrate G, fine control is performed so that the LCD substrate G is not damaged by this contact.

It is also preferable to return the developing nozzles 51a and 51b to the starting side of the puddle after the completion of one puddle work shown in FIG. 11 and apply the developing solution to the LCD substrate G again (step). 3g). By performing the liquid deposition on the LCD substrate G multiple times, it is possible to shorten the development time while maintaining high development accuracy.

FIG. 12 is an explanatory diagram showing the relationship between the liquid piling condition on the LCD substrate G and the obtained development pattern characteristics. FIG. 12A shows the scanning speed and line width uniformity of the development nozzles 51a and 51b. 12 shows the relationship with
(B) shows the relationship between the number of liquid pilings and the line width.
(C) shows the relationship between the number of liquid pilings and the line width uniformity.

The results shown in FIGS. 12A to 12C are obtained by exposing the LCD substrate G under a predetermined condition using a mask having a predetermined pattern having a line width of 8 μm or 10 μm, and then exposing the exposed LCD. It is obtained by developing the substrate G under various conditions, observing the pattern of the resist film thus obtained by SEM, and measuring the line width (width of the convex portion in the developed pattern). In this SEM observation, in order to observe the entire LCD substrate G,
A plurality of observation points were provided radially in eight directions intersecting at an equal angle in the approximate center of the LCD substrate G.

The result shown in FIG. 12A shows that the line width is 10 μm.
Using the mask on which the pattern of
The discharge flow rate of the developing solution from the a.
・ Constant regardless of the scanning speed of 51b, changing the scanning speed of the developing nozzles 51a and 51b to perform the puddle only once, and further developing time (developing liquid from the LCD substrate G after starting the application of the developing liquid). It was obtained with a constant time until removal. Note that one bar graph in FIG. 12A corresponds to one LCD substrate G.

As shown in FIG. 12A, the developing nozzle 5
It was found that the line width uniformity was improved when the scanning speed of the developing nozzles 51a and 51b was higher when the number of times of liquid deposition of 1a and 51b was one. This is because the staying amount of the developing solution at the starting end of the developing solution is reduced and a partial excess reaction of the development occurring at the starting end is suppressed, and the time when the entire LCD substrate G is filled with the developing solution is suppressed. LCD substrate G because it is short
It is considered that the development reaction proceeded uniformly as a whole.

The "partial excess reaction of development occurring at the developing solution start end" means the following. That is, the developing solution is supplied in the scanning direction with the scanning of the developing nozzles 51a and 51b, but at this time, a part of the developing solution flows in the direction opposite to the scanning direction. This return developer cannot flow any further at the start portion of the heap of developer and accumulates in place. For this reason, the developing solution is excessively supplied at the developing solution heap start end portion, and the developing reaction proceeds from other portions, and the excessive reaction proceeds. This partial overreaction of development results in increased in-plane linewidth variation.

Since the amount of the returning developer can be reduced by increasing the scanning speed of the developing nozzles 51a and 51b, a partial excess reaction at the developing solution starting end can be suppressed.

Since the discharge flow rate of the developing solution from the developing nozzles 51a and 51b and the developing time are constant, the average line width is 9.94 when the scanning speed is 100 mm / sec.
Although it was close to the mask pattern of .mu.m, the variation of the line width was large in the entire LCD substrate G. On the other hand, when the scanning speed is 210 mm / sec, the average line width is 9.78 μm.
Although the pattern was slightly narrower than the mask pattern, the variation in line width was reduced over the entire LCD substrate G. This result is
When the scanning speed of the developing nozzles 51a and 51b is high, the impact of the developing solution on the resist is increased and the developing reaction is further promoted.
The cause is that the development reaction proceeded too much at mm / sec.
Thought to be one. Therefore, the developing nozzles 51a, 51
When b is scanned at a high speed, it is considered that the average line width can be made closer to the pattern of the mask by shortening the development time, and the line width uniformity can be improved.

The result shown in FIG. 12B is that the developing nozzle 51a is used by using a mask on which a pattern having a line width of 8 μm is formed.
When the scan speed of 51b is 80 mm / sec and the developer discharge amount is 5.6 L (liter) / min, and the scan speed of the developing nozzles 51a and 51b is 160 mm / sec, the developer discharge amount is 9.4 L / min. In this case, the average line width is shown when the number of puddle is changed while the development time is kept constant. As shown in FIG. 12B, the average line width becomes narrower as the number of liquid pilings increases. This indicates that the development reaction proceeds faster as the number of times of liquid piling increases, and therefore it is considered that the development time can be shortened by increasing the number of times of liquid piling.

The result shown in FIG. 12C is that the developing nozzle 51a is formed by using a mask on which a pattern having a line width of 8 μm is formed.
When the scan speed of 51b is 80 mm / sec and the developer discharge amount is 5.6 L (liter) / min, and the scan speed of the developing nozzles 51a and 51b is 160 mm / sec, the developer discharge amount is 9.4 L / min. In this case, the line width uniformity is shown when the number of puddle is changed while the development time is constant. In addition, one bar graph in FIG. 12C corresponds to one LCD substrate G.

As shown in FIG. 12C, when the number of puddle is the same, the line width uniformity tends to improve as the scanning speed of the developing nozzles 51a and 51b increases.
Further, when the scanning speed of the developing nozzles 51a and 51b is high (160 mm / sec), the line width uniformity is improved as the number of liquid pilings is increased. From these results, it is understood that increasing the scan speed of the developing nozzles 51a and 51b and increasing the number of liquid pilings is effective for improving the line width uniformity.

The LCD substrate G on which the liquid piling process in the first developing solution supply zone 24b is completed is transferred to the roller transfer mechanism 14
Is operated to convey the toner to the second developing solution supply zone 24c at a conveying speed of, for example, 46 mm / sec (step 4). When the LCD substrate G passes through the second developing solution supply zone 24c, the developing solution may be replenished onto the LCD substrate G from the developing solution replenishing nozzle 51c (step 5).

The LCD substrate G transported to the second developing solution supply zone 24c is further transported to the developing solution removal zone 24d (step 6), where the LCD substrate G is converted into an oblique posture and development on the LCD substrate G is performed. The liquid is allowed to flow down (step 7), and the rinse liquid discharge nozzle 52 discharges a rinse liquid, for example, pure water, onto the surface of the LCD substrate G while the LCD substrate G is held in an inclined position, and the developer liquid on the LCD substrate G is discharged. Rinse (step 8).

Then, the LCD substrate G is rinsed with the rinse zone 24.
Then, the rinse liquid is discharged to the front surface and the back surface of the LCD substrate G while the LCD substrate G is being transported at a predetermined speed, to remove and clean the developing solution adhering to the LCD substrate G. Perform (step 10). The LC that has passed through the rinse zone 24e while the rinse treatment is being performed.
The D substrate G is transported to the drying zone 24f (step 1
1). In the drying zone 24f, the drying process by the air nozzle 54 is performed while the LCD substrate G is being transported at a predetermined speed (step 12). The LCD substrate G that has been dried is transported by the roller transport mechanism 14 to the i-line UV irradiation unit (i-UV) 25 (step 13), where a predetermined ultraviolet irradiation process is performed.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, the number of developing solution discharge nozzles arranged in the first developing solution supply zone 24b may be one, or three or more. When one developing solution discharge nozzle is used, the flow rate of the developing solution discharged from the developing solution discharge nozzle must be increased, so that the discharging force of the developing solution becomes strong and the developing solution discharged onto the LCD substrate G is increased. Is the LCD substrate G
The ejection state of the developing solution from the developing solution ejection nozzle, for example, the ejection direction and ejection force of the developing solution are controlled so as not to spill.

In the first developing solution supply zone 24b, the developing solution applied onto the LCD substrate G is conveyed to the LCD substrate G while being conveyed at a speed at which the developing solution applied onto the LCD substrate G does not spill without stopping. A developing solution may be applied. Furthermore, the scanning direction of the developing nozzles 51a and 51b is set to LC.
Although the direction opposite to the transport direction of the D substrate G is set, the LCD substrate G
When stopping, the developing nozzles 51a and 51b may be scanned in a direction perpendicular to the transport direction of the LCD substrate G.

[0092]

As described above, according to the liquid processing apparatus and liquid processing method of the present invention, the processing liquid is applied to the substrate in a short time by scanning the processing liquid discharge nozzle at a predetermined speed. Therefore, it is possible to perform uniform liquid treatment on the entire substrate. In this way, the effect of improving the quality of the substrate and reducing the incidence of product defects can be obtained. In addition, since it is not necessary to convey the substrate coated with the processing liquid at high speed, it is not necessary to stop the substrate suddenly, which may cause the processing liquid to spill over the substrate and prevent the liquid processing from proceeding, or the spilled processing liquid phase It is not necessary to supplement the equivalent. Further, since the stress caused by the sudden stop prevents the substrate from being distorted or the substrate from being overrun and damaged, the manufacturing yield is increased and the maintenance load is reduced. Further, since the space required for transporting the substrate may be the same as the conventional one, an increase in the footprint of the device is suppressed.

[Brief description of drawings]

FIG. 1 is a schematic plan view of a resist coating / development processing system including a development processing unit that is an embodiment of a liquid processing apparatus of the present invention.

FIG. 2 is a side view showing a first thermal processing unit section of the resist coating / developing processing system shown in FIG.

FIG. 3 is a side view showing a second thermal processing unit section of the resist coating / developing processing system shown in FIG. 1.

FIG. 4 is a side view showing a third thermal processing unit section of the resist coating / developing processing system shown in FIG. 1.

FIG. 5 is a schematic side view of a development processing unit according to the present invention.

6 is a schematic plan view of the development processing unit shown in FIG.

7 is a front view of the structure of a first developer supply zone included in the development processing unit shown in FIG. 5, as viewed from the upstream side in the transport direction of the LCD substrate.

8 is a perspective view showing a structure of a main developing solution discharge nozzle arranged in a first developing solution supply zone of the developing processing unit shown in FIG.

9 is a side view showing an arrangement form of the main developing solution discharge nozzles and the sub developing solution discharge nozzles shown in FIG. 5 and a developing solution application mode.

FIG. 10 is an explanatory view (flow chart) showing an outline of a development processing step.

FIG. 11 is an explanatory diagram showing a scanning mode of a main developing solution discharge nozzle and a sub developing solution discharge nozzle.

FIG. 12 is an explanatory view showing the relationship between the liquid piling condition on the LCD substrate and the line width and line width uniformity of the obtained development pattern.

[Explanation of symbols]

1; Cassette station 2; Processing station 3; Interface station 14; Roller transport mechanism 17; Coro 24; Development processing unit (DEV) 24a; Introduction zone 24b; first developer supply zone 24c; second developer supply zone 24d; developer removal zone 24e; rinse zone 24f; drying zone 51a; Main developer discharge nozzle 51b: Sub-developing solution discharge nozzle 51c; developer replenishing nozzle 52: Rinse liquid discharge nozzle 53; Rinse nozzle 54; Air nozzle (air knife) 55; Nozzle fixing member 56; Nozzle holding member 57; Lifting device 58; Arched arm 59a; guide rail 60; developer supply mechanism 60a; nozzle moving mechanism 100; Resist coating / development processing system (processing device) G: LCD substrate

Continued front page    F term (reference) 2H088 FA17 FA18 FA30 MA20                 2H096 AA27 GA21                 4D075 AC02 BB20Y CA47 DA06                       DB13 DC24 EA05                 4F041 AA02 AA05 AB01 BA22 BA56                       CA02 CA22                 5F046 LA11 LA14 LA19

Claims (20)

[Claims] 1. A transport mechanism for transporting a substrate in one direction in a substantially horizontal posture, a processing liquid discharge nozzle for discharging a processing liquid onto the surface of the substrate transported by the transport mechanism, and the processing liquid discharge nozzle for the substrate. A nozzle moving mechanism that moves the processing liquid at a predetermined speed on the substrate, and discharges the processing liquid from the processing liquid discharging nozzle while moving the processing liquid discharging nozzle by the nozzle moving mechanism. A liquid processing apparatus, wherein: 2. A fixed treatment liquid replenishing nozzle for further applying the treatment liquid onto the surface of the substrate, which is coated with the treatment liquid by the treatment liquid discharge nozzle and is transported by the transport mechanism, is further provided. Claim 1 characterized by
The liquid processing apparatus according to item 1. 3. The processing liquid replenishment nozzle has a shape that is long in a direction orthogonal to the substrate transport direction, and is formed in the entire direction orthogonal to the transport direction with respect to a substrate passing below the processing liquid replenishment nozzle. The liquid processing apparatus according to claim 2, wherein the processing liquid is replenished in a substantially strip shape. 4. The liquid according to claim 1, wherein the nozzle moving mechanism moves the processing liquid discharge nozzle in a direction opposite to a transport direction of the substrate. Processing equipment. 5. The treatment liquid discharge nozzle comprises two nozzles, a main treatment liquid discharge nozzle and a sub-treatment liquid discharge nozzle, which are long in a direction orthogonal to a moving direction of the nozzle moving mechanism, and the main treatment liquid discharge nozzle. And the sub-process liquid discharge nozzle,
The main processing liquid discharge nozzle is located in front of the moving direction of the nozzle moving mechanism, and the sub-processing liquid discharge nozzles are arranged in parallel so as to be located rearward of the moving direction. 5. The sub-process liquid discharge nozzle discharges the process liquid in a substantially strip shape in the entire direction orthogonal to the moving direction with respect to the substrate, according to any one of claims 1 to 4. The liquid processing apparatus described. 6. The liquid processing apparatus according to claim 5, wherein a gap between the sub processing liquid discharge nozzle and the substrate is wider than a gap between the main processing liquid discharge nozzle and the substrate. 7. The main treatment liquid ejection nozzle and the sub treatment liquid ejection nozzle are arranged in a vertical direction so that the treatment liquid is ejected obliquely downward and rearward in the movement direction when moved by the nozzle moving mechanism. The liquid processing apparatus according to claim 5 or 6, wherein the liquid processing apparatus is held in an inclined state at an angle of 5 degrees or more and 15 degrees or less. 8. The substrate further comprising an elevating mechanism for elevating and lowering the main processing liquid ejection nozzle and the sub processing liquid ejection nozzle, wherein the elevating mechanism includes the substrate in which the sub processing liquid ejection nozzle finishes ejection of the processing liquid. 7. The bottom surface of the sub-processing liquid discharge nozzle is brought close to the vicinity of the end surface so that the processing liquid applied to the substrate does not spill from the end surface when reaching a predetermined position near the end surface. 5
The liquid processing apparatus according to claim 7. 9. The transfer mechanism stops the operation to stop the substrate when the processing liquid is applied to the substrate, according to any one of claims 1 to 8. The liquid processing apparatus according to item. 10. The nozzle moving mechanism moves the processing liquid discharge nozzle in a substantially horizontal direction at a speed of 100 mm / sec or more and 500 mm / sec or less.
10. The liquid processing apparatus according to claim 9. 11. A step of transporting a substrate to a liquid processing region in which a liquid treatment is performed with a substantially horizontal posture, and in the liquid processing region, the transport of the substrate is stopped or the transport speed of the substrate is set to the liquid processing region. A step of lowering the substrate transport speed; and a step of ejecting the treatment liquid onto the substrate from the treatment liquid ejection nozzle while horizontally moving a treatment liquid ejection nozzle for applying the treatment liquid onto the substrate. And a step of applying the treatment liquid to the liquid. 12. The substrate coated with the treatment liquid is conveyed at a predetermined speed, and the treatment liquid is ejected from a fixed treatment liquid replenishing nozzle for coating the substrate with the treatment liquid, and the substrate is further treated with the treatment liquid. The liquid treatment method according to claim 11, wherein a treatment liquid is applied. 13. In the step of applying a processing liquid to the substrate, the processing from the processing liquid discharge nozzle is performed when the processing liquid discharge nozzle reaches the vicinity of an end surface of the substrate where the discharge of the processing liquid should be finished. The treatment liquid applied onto the substrate is prevented from spilling from the end face by stopping the discharge of the liquid and bringing the treatment liquid discharge nozzle close to the vicinity of the end face. Item 13. The liquid treatment method according to item 12. 14. In the step of applying a treatment liquid to the substrate, the treatment liquid ejection nozzle is moved substantially horizontally a plurality of times while the treatment liquid ejection nozzle ejects the treatment liquid to the substrate. The liquid treatment method according to any one of claims 11 to 13, wherein the treatment liquid is applied to the substrate. 15. In the step of applying the treatment liquid to the substrate, the treatment liquid is ejected from the treatment liquid ejection nozzle in a moving direction of the treatment liquid ejection nozzle when the treatment liquid ejection nozzle is moved in a substantially horizontal direction. 15. The liquid processing method according to claim 11, wherein the liquid is discharged obliquely downward and rearward. 16. The method of applying the processing liquid to the substrate, wherein the processing liquid is applied to the substrate by using two nozzles as the processing liquid discharge nozzles. The liquid treatment method according to any one of 1. 17. A liquid processing apparatus for developing a substrate that has been subjected to an exposure process, comprising: a transport mechanism that transports the substrate in one direction in a substantially horizontal posture; and a transport mechanism that transports the substrate by the transport mechanism. A nozzle for moving the developing solution discharging nozzle that discharges the developing solution onto the surface; and a nozzle moving mechanism that moves the developing solution discharging nozzle on the substrate in a direction opposite to the transport direction of the substrate at a predetermined speed. A liquid processing apparatus, wherein the developing solution is applied to the substrate by discharging the developing solution from the developing solution discharging nozzle while moving the developing solution discharging nozzle by a mechanism. 18. The liquid crystal display device further comprises a fixed developer replenishing nozzle for applying the developer to the surface of the substrate, which is coated with the developer by the developer discharge nozzle and is transported by the transport mechanism. Claim 1
7. The liquid processing apparatus according to 7. 19. A liquid processing method for developing a substrate that has been subjected to an exposure process, comprising the step of transporting the substrate in a substantially horizontal posture to a developer coating region where the developer is coated, and the developer coating region. In the step of stopping the transportation of the substrate or slowing the transportation speed of the substrate lower than the transportation speed of the substrate to the developing solution application region, a developing solution discharge nozzle for applying the developing solution to the substrate is provided on the substrate. Discharging the developing solution from the developing solution discharge nozzle while horizontally moving to puddle the developing solution on the substrate; and a draining method for draining the developing solution on a substrate on which the developing solution is puddle And a step of transporting the solution to a processing area. 20. After the step of pouring the developing solution onto the substrate and before the step of transferring the substrate to the draining processing region, while transferring the substrate coated with the developing solution at a predetermined speed, 20. The liquid processing method according to claim 19, wherein the developing solution is discharged from a fixed developing solution replenishing nozzle that applies the developing solution to the substrate, and the process of further applying the developing solution to the substrate is performed. .