JP2001284400A - Flip chip mounted component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To secure air layer between the circuit plane of a high-frequency component and the substrate plane through a simple structure. SOLUTION: In the region of a substrate 10, facing the region of a high frequency circuit 2, a film 12 to which the liquid material 20a of an under fill 20 does not tend to easily adhere is formed. An electrode is formed in the central region of a high-frequency component 1, and the high-frequency circuit is formed on the periphery thereof. In an alternative mode, a thermosetting anisotropic conductive film 21, formed in correspondence with the region of a stud bump 3 and a land 11 and having an opening 21a facing the region of the high-frequency circuit is set. Furthermore, in other modes, an opening 10a is made in a region of the substrate 10 facing the region of the high-frequency circuit on the high-frequency component 1 side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the mounting of electronic components, and more particularly to flip-chip mounted components having high frequency components.

[0002]

2. Description of the Related Art Generally, a structure for mounting a high-frequency component on which a microstrip or an electrode is formed on a substrate is formed by electrically connecting an electrode of the high-frequency component and a land of the substrate via a stud bump serving as an electrical connection bump. There is a known method of connecting the terminals. FIG. 10 shows a flip-chip mounting process having a conventional high-frequency component. A high-frequency circuit 2 is formed in a central region of a bare IC 1, and an electrode 1b is formed therearound. First, the stud bumps 3 are formed on the electrodes 1b of the bare IC 1 as shown in FIGS. 10A and 10B, and then all the studs are pressed by pressing the stud bumps 3 as shown in FIG. Leveling is performed so that the bumps 3 have the same height.

Then, as shown in FIGS. 10 (4) and 10 (5), the conductive paste 4 is transferred to the stud bump 3 with the stud bump 3 facing down, and then the stud bump 3 as shown in FIGS. 10 (6) and 10 (7). Bump 3 and land 11 on substrate 10
After the IC 1 is mounted on the substrate 10 by positioning the conductive paste, the conductive paste is cured. Next, FIGS. 10 (8) to (1)
As shown in (0), a liquid material 20a of the underfill 20, which is a kind of bonding member having a protective function, is applied around the stud bump 3 and the land 11 of the substrate 10 and is cured.

[0004]

However, in the above conventional example, since the raw material 20a of the underfill 20 is in a liquid state, a capillary phenomenon occurs between the surface of the high frequency circuit 2 of the component such as the IC 1 and the substrate 10 before curing. Pierce by. The circuit of the high-frequency component such as the IC 1 and the circuit of the substrate 10 are originally designed based on the dielectric constant of air, and therefore, the underfill 20 having a dielectric constant different from that of air is formed in the high-frequency circuit 2. There is a problem that the high-frequency characteristics change when penetrating between the region and the substrate 10 and curing.

As conventional examples for preventing this, for example, Japanese Patent Application Laid-Open No. Hei 10-98134 and Japanese Patent Application Laid-Open No. Hei 6-204
As disclosed in JP-A-293-293 and JP-A-6-204291, a structure is proposed in which a dam is provided so that an air layer is formed between the circuit surface of the high-frequency component and the substrate surface, and the area around the dam is sealed with resin. However, in this case, the structure is complicated by the provision of the dam, and it takes time to seal the resin so as not to enter the dam.

The present invention has been made in view of the above-mentioned problems of the prior art, and provides a flip-chip mounted component having a high-frequency component capable of securing an air layer between a circuit surface and a substrate surface of the high-frequency component with a simple structure. With the goal.

[0007]

According to the present invention, in order to attain the above object, a film is formed on a region of a substrate facing a region of a high-frequency circuit, in which a liquid material of an underfill agent is not easily attached. That is, according to the present invention, a high-frequency circuit in which a high-frequency circuit is formed in the central region and an electrode formed around the high-frequency circuit, and a substrate on which a high-frequency component in which a land is formed so as to face the electrode are mounted, In a flip-chip mounting component having a bonding member for bonding the high-frequency component and the substrate, a film in which a liquid material of the bonding member does not easily adhere to a region of the substrate facing a high-frequency circuit region of the high-frequency component is formed. Then, after arranging the bumps for electrical connection attached to the electrodes and the lands so as to face each other, a liquid material for a bonding member is applied around the electrodes and the lands and cured. Flip-chip mounted component is provided. With this configuration, it is possible to prevent the liquid raw material of the underfill agent from entering the region of the high-frequency circuit, and to secure an air layer between the circuit surface of the high-frequency component and the substrate surface with a simple structure.

According to the present invention, in order to achieve the above object, an electrode is formed in a central region of a high-frequency component, and a high-frequency circuit is formed around the electrode. That is, according to the present invention,
A high-frequency component in which an electrode is formed in a central region and a high-frequency circuit is formed around the electrode, a land is formed on the substrate so as to face the electrode, and an electrical connection bump and the land are attached to the electrode. Then, a flip-chip mounting component is provided in which a liquid material for a bonding member is applied to the positions of the electrodes and the lands, and is cured. With this configuration, it is possible to provide a flip-chip mounted component capable of securing a large air layer outside the stud bumps and the lands.

In order to achieve the above object, the present invention is formed so as to correspond to a stud bump and a land area.
In addition, a thermosetting anisotropic conductive film formed in a shape in which a portion facing a high-frequency circuit region is opened is cured. That is, according to the present invention, a high-frequency circuit in which a high-frequency circuit is formed in a central region and an electrode is formed around the high-frequency circuit, a substrate on which a land is formed so as to face the electrode, In a flip-chip mounting component having a bonding member for bonding to a substrate, between a land for electrical connection attached to the electrode and the land, a region corresponding to the bump for electrical connection and the land is provided. Flip-chip mounting, comprising: a thermosetting anisotropic conductive film formed in a shape which is formed into a shape having an opening facing a region of a high-frequency circuit, and wherein the anisotropic conductive film is cured. Parts are provided. With this configuration,
Only the stud bump and land areas can be securely joined,
At the same time, an air layer can be secured in the microstrip region, and a highly reliable flip chip mounted component can be provided.

According to the present invention, in order to achieve the above object, an opening is formed in a region of a substrate opposed to a region of a high-frequency circuit on a high-frequency component side. That is, according to the present invention, a high-frequency circuit in which a high-frequency circuit is formed in a central region and an electrode is formed around the high-frequency circuit, a substrate on which a land is formed so as to face the electrode, A flip-chip mounting component having a bonding member for bonding to a substrate, wherein the substrate is a substrate having an opening formed in a portion of the high-frequency component facing a region of a high-frequency circuit, and an electrical connection attached to the electrode. A flip chip mounting component, wherein a material for a liquid bonding member is applied around the electrical connection bump and the land, and the material is hardened. You. With this configuration, an air layer can be reliably secured in the high-frequency circuit area of the high-frequency component, and a highly reliable flip-chip mounted component can be easily provided.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS <First Embodiment> An embodiment of the present invention will be described below with reference to the drawings. Figure 1 shows the first
FIG. 2 is a configuration diagram showing a connection surface (electrode side) of the high-frequency IC according to the embodiment, FIG. 2 is a configuration diagram showing the periphery of a land of the substrate according to the first embodiment, and FIG. 3 is a flip having a high-frequency component according to the present invention. 1 is a configuration diagram illustrating a first embodiment of a chip mounted component.

In FIG. 1, a microstrip (not shown) constituting a high-frequency circuit 2 is formed in a central rectangular area of a high-frequency IC (also simply referred to as IC) 1. A plurality of electrodes (not shown) are formed around the microstrip area, and the stud bumps 3 are arranged on the electrodes. Further, a dam 4 is formed at the boundary between the microstrip region and the stud bump 3 (and the electrode).

On the other hand, as shown in FIG. 2, a land 11 is formed on the substrate 10 so as to oppose the stud bump 3 on the IC 1 side, and a land opposing the microstrip area 2 on the IC 1 side. The film 12 to which the liquid material 20a of the underfill 20 is hardly attached is formed. The film 12 (and the dam 4) is made of a material having a small coefficient of friction and difficult to adhere to, for example, a fluororesin or an acrylic resin. Polytetrafluoroethylene can be used as the fluororesin.
This is known as "Teflon" (registered trademark of DuPont).

Then, in order to couple the IC 1 and the substrate 10, the stud bumps 3 and the lands 11 are arranged so as to face each other, and then the raw material of the liquid underfill 20 is applied around the stud bumps 3 and the lands 11. When this is cured, as shown in FIG. 3, an underfill 2 is formed in a region on the substrate 10 facing the microstrip region 2 on the IC 1 side.
Since the film 12 to which the liquid material 20a is hardly attached is formed, the liquid underfill 20 is formed in this region.
Thus, the air layer 30 can be cured between the circuit surface of the IC 1 (the microstrip region 2) and the surface of the substrate 10. Also, the dam 4 is formed on the IC 1 side at the boundary between the microstrip region forming the high-frequency circuit 2 and the stud bump 3, so that the liquid material 20 a of the underfill 20 can be further prevented from entering. it can.

Here, the thickness of the film 12 on the substrate 10 is formed to be thinner than the air layer 30 between the circuit surface of the IC 1 and the surface of the substrate 10. For example, the diameter of the stud bump 3 (= IC 1
The distance between the electrode surface and the land surface of the substrate 10) is 45 μm
In this case, the film is formed with a thickness of about 0.1 to 25 μm. When polytetrafluoroethylene is used, a dry thin film forming method such as P
It can be formed by a VD method (vacuum evaporation method) or a sputtering method. When using an acrylic resin, a printing method for printing and curing a liquid resin, a transfer method for transferring and curing the liquid resin, a thermosetting epoxy resin or a UV-curable acrylic resin using a molded resin sheet as an adhesive. It can be formed by a pasting method of pasting.

<Second Embodiment> Next, a second embodiment will be described with reference to FIGS. As shown in FIG. 4, the IC 1 has a plurality of electrodes (not shown) formed in a central rectangular area, and the stud bumps 3 are arranged on the electrodes. Further, in a region around the stud bump 3 (and the electrode), a microstrip (not shown) constituting the high-frequency circuit 2 is formed. In contrast, substrate 1
5, stud bumps 3 on the IC1 side are shown in FIG.
The land 11 is formed so as to face the rectangular area on the IC 1 side.

Then, in order to connect the IC 1 and the substrate 10, the stud bump 3 and the land 11 are arranged so as to face each other as shown in FIG. When the raw material 20a is applied and cured, an air layer 30 having a large area is secured outside the stud bump 3 and the land 11, that is, between the microstrip region 2 of the IC 1 and the substrate 10, as shown in FIG. be able to. In the second embodiment, as in the first embodiment, the film 1 on which the liquid material 20a of the underfill 20 is unlikely to adhere to the region of the substrate 10 facing the microstrip region 2 is used.
By forming 2, air layer 30 can be more reliably secured.

Third Embodiment Next, a third embodiment will be described with reference to FIGS. Micro-strips (not shown) constituting the high-frequency circuit 2 are formed in a central rectangular area of the IC 1 shown in FIG. A plurality of electrodes (not shown) are formed around the microstrip area, and the stud bumps 3 are arranged on the electrodes. A land 11 is formed on the substrate 10 so as to face the stud bump 3 on the IC 1 side.

In the third embodiment, as shown in FIGS. 7 and 8, the stud bump 3 and the land 11 are formed.
And a region of the stud bump 3 and the land 11 via a thermosetting ACF (anisotropic conductive film) 21 formed so as to correspond to the region of the microstrip and having an opening 21a formed so as to face the region of the microstrip. Combine only
An air space 30 is secured between the microstrip area of the IC 1 and the substrate 10. Here, the ACF 21 contains N in the resin.
i and Ag are formed into a film containing conductive balls, and the film is formed on the stud bump 3 and the land 11.
The ACF 21 is hardened by punching out the area corresponding to the area (2) and placing it between the stud bump 3 and the land 11 and heating and cooling in this state. With this configuration, only the stud bump and land regions can be reliably joined, and at the same time, an air layer can be secured in the microstrip region, and a highly reliable flip chip mounting component can be provided.

<Fourth Embodiment> Next, a fourth embodiment will be described with reference to FIG. A microstrip (not shown) constituting the high-frequency circuit 2 is formed in a central rectangular area of the IC 1. A plurality of electrodes (not shown) are formed around the microstrip area, and the stud bumps 3 are arranged on the electrodes.
A land 11 is formed on the substrate 10 so as to face the stud bump 3 on the IC 1 side, and an opening 10 a is formed in a region facing the microstrip region 2.

Then, in order to bond the IC 1 and the substrate 10, the stud bumps 3 and the lands 11 are arranged so as to face each other, and a liquid material 20a of the underfill 20 is applied around the stud bumps 3 and the lands 11. When this is cured, as shown in FIG.
The air layer 30 can be reliably secured between the microstrip region 2 and the substrate 10.

[0022]

As described above, according to the present invention, the film of the liquid material of the underfill agent is hardly attached to the region of the substrate facing the region of the high-frequency circuit, so that the circuit of the high-frequency component has a simple structure. A flip-chip mounted component in which an air layer is secured between the surface and the substrate surface can be provided. Further, according to the present invention, since the electrode is formed in the center region of the high-frequency component and the high-frequency circuit is formed around the electrode, a large-area air layer is formed between the circuit surface of the high-frequency component and the substrate surface with simple components. It is possible to provide a secured flip-chip mounted component. Further, according to the present invention, a thermosetting anisotropic conductive film molded so as to correspond to the stud bump and land areas and having openings formed so as to face the high-frequency circuit area is cured. Therefore, it is possible to provide a flip-chip mounted component in which an air layer is secured between the circuit surface of the high-frequency component and the substrate surface with simple components. Further, according to the present invention, since the opening is formed in the region of the substrate facing the region of the high-frequency circuit of the high-frequency component, flip-chip mounting in which an air layer is secured between the circuit surface of the high-frequency component and the substrate surface with simple components Parts can be provided.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a connection surface (electrode side) of a high-frequency IC according to a first embodiment;

FIG. 2 is a configuration diagram showing the periphery of a land on the substrate according to the first embodiment;

FIG. 3 is a sectional view showing a first embodiment of a flip-chip mounted component having a high-frequency component according to the present invention.

FIG. 4 is a configuration diagram showing a connection surface (electrode side) of the high-frequency IC according to the second embodiment;

FIG. 5 is a side view showing a high-frequency IC and a substrate according to a second embodiment;

FIG. 6 is a schematic side view showing a second embodiment of a flip-chip mounted component having a high-frequency component according to the present invention.

FIG. 7 is a schematic view showing an anisotropic conductive film according to a third embodiment.

FIG. 8 is a schematic side view showing a third embodiment of the flip-chip mounted component of the high-frequency component according to the present invention.

FIG. 9 is a partial cross-sectional view showing a fourth embodiment of the flip-chip mounted component of the high-frequency component according to the present invention.

FIG. 10 is a flowchart showing a mounting process of a conventional flip-chip mounted component having a high-frequency component.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 High frequency IC (High frequency component) 2 High frequency circuit 3 Stud bump 10 Substrate 10a Opening 11 Land 12 Film 20 Underfill (UF) 20a Raw material 21 Anisotropic conductive film (ACF) 21a Opening

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 3/34 501 H05K 3/34 501Z F term (Reference) 4M109 BA04 CA05 CA06 DB15 DB16 DB17 GA10 5E314 AA25 BB05 BB15 CC01 FF01 GG26 5E319 AA03 AA07 AC13 BB05 BB16 CC22 CD60 5F044 KK01 LL01 LL09 LL11 QQ02 RR18 5F061 AA01 BA04 CA06

Claims (4)

[Claims] A high-frequency circuit in which a high-frequency circuit is formed in a central region and an electrode formed around the high-frequency circuit; a substrate on which a high-frequency component in which a land is formed so as to face the electrode is mounted; In a flip-chip mounting component having a component and a joining member for joining the substrate, a film in which a liquid material of the joining member is hardly attached to a region of the substrate facing a region of a high-frequency circuit of the high-frequency component, After arranging the bumps for electrical connection attached to the electrodes and the lands so as to face each other, applying a liquid material for a bonding member around the electrodes and the lands and curing the same. Chip mounting parts. 2. A high-frequency component in which an electrode is formed in a central region and a high-frequency circuit is formed around the electrode, and a land is formed on the substrate so as to face the electrode, and an electrical connection is provided on the electrode. A flip-chip mounting component in which a bump and the land are arranged so as to face each other, and then a liquid material for a bonding member is applied to the positions of the electrode and the land and cured. 3. A high-frequency component in which a high-frequency circuit is formed in a central region and an electrode is formed around the high-frequency circuit, a substrate on which a land is formed so as to face the electrode, the high-frequency component and the substrate A flip-chip mounted component having a joining member for joining the bumps, wherein between the electrical connection bumps attached to the electrodes and the lands, molding is performed so as to correspond to the areas of the electrical connection bumps and the lands. A flip-chip mounting component, comprising: a thermosetting anisotropic conductive film formed in a shape having an opening at a portion facing a region of a high-frequency circuit, wherein the anisotropic conductive film is cured. 4. A high-frequency component in which a high-frequency circuit is formed in a central region and an electrode is formed around the high-frequency circuit, a substrate in which a land is formed so as to face the electrode, the high-frequency component and the substrate A flip-chip mounting component having a bonding member for bonding the high-frequency component, wherein the substrate is a substrate having an opening formed in a portion facing the high-frequency circuit region of the high-frequency component, and the electrical connection bump attached to the electrode. A flip-chip mounting component, wherein a material for a liquid bonding member is applied around the electrical connection bump and the land, and is cured.