JP2001014615A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001014615A5 JP2001014615A5 JP1999193546A JP19354699A JP2001014615A5 JP 2001014615 A5 JP2001014615 A5 JP 2001014615A5 JP 1999193546 A JP1999193546 A JP 1999193546A JP 19354699 A JP19354699 A JP 19354699A JP 2001014615 A5 JP2001014615 A5 JP 2001014615A5
- Authority
- JP
- Japan
- Prior art keywords
- overlap amount
- magnetic field
- resistance value
- total resistance
- bias magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
ただし、オーバーラップ量を1μmとした場合でも、バイアス層8からのバイアス磁界が50[Oe]以上あるときには、良品率が80%以上であることが確認されている。したがって、MRヘッドを作製する際には、オーバーラップ量だけにとらわれず、MR素子7に対するバイアス層8からのバイアス磁界強度を考慮して設計し、このバイアス磁界が50[Oe]以上になるように作製することが望ましい。 However, even when the overlap amount is 1 μm, it has been confirmed that the non-defective rate is 80% or more when the bias magnetic field from the bias layer 8 is 50 [Oe] or more. Therefore, when manufacturing the MR head, the design is made in consideration of the bias magnetic field strength from the bias layer 8 with respect to the MR element 7 regardless of the overlap amount, and the bias magnetic field is 50 [Oe] or more. It is desirable to make it.
そして、これら複数のMRヘッドについて、リード構造体16の全抵抗値を測定し、オーバーラップ量との関係を調べた。その結果を図19に示す。なお、リード構造体16の全抵抗値を測定する際の条件は、電流を2〜5mAとして、、各電流から求めた抵抗値を平均した。また、図19に示すオーバーラップ量の値は、図15の場合と同様に、一対のリード電極15のうちの一方だけのオーバーラップ量を示す。なお、図19には、リード電極15をオーバーラップさせずに作製した、従来のMRヘッドにおけるリード構造体の全抵抗値も比較例として示している。 Then, the total resistance value of the lead structure 16 was measured for these plurality of MR heads, and the relationship with the overlap amount was investigated. The result is shown in FIG. As a condition for measuring the total resistance value of the lead structure 16, the current was set to 2 to 5 mA, and the resistance values obtained from each current were averaged. Further, the value of the overlap amount shown in FIG. 19 indicates the overlap amount of only one of the pair of lead electrodes 15 as in the case of FIG. Note that FIG. 19 also shows the total resistance value of the lead structure in the conventional MR head manufactured without overlapping the lead electrodes 15 as a comparative example.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11193546A JP2001014615A (en) | 1999-04-30 | 1999-07-07 | Magnetoresistance type magnetic head and its manufacture |
KR1020000023260A KR20000071877A (en) | 1999-04-30 | 2000-05-01 | Magneto-resistance effect and manufacturing method thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-125183 | 1999-04-30 | ||
JP12518399 | 1999-04-30 | ||
JP11193546A JP2001014615A (en) | 1999-04-30 | 1999-07-07 | Magnetoresistance type magnetic head and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001014615A JP2001014615A (en) | 2001-01-19 |
JP2001014615A5 true JP2001014615A5 (en) | 2006-04-20 |
Family
ID=26461694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11193546A Pending JP2001014615A (en) | 1999-04-30 | 1999-07-07 | Magnetoresistance type magnetic head and its manufacture |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2001014615A (en) |
KR (1) | KR20000071877A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3260741B1 (en) | 2000-08-04 | 2002-02-25 | ティーディーケイ株式会社 | Magnetoresistive device and its manufacturing method, thin-film magnetic head and its manufacturing method |
-
1999
- 1999-07-07 JP JP11193546A patent/JP2001014615A/en active Pending
-
2000
- 2000-05-01 KR KR1020000023260A patent/KR20000071877A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH06310327A (en) | Integrated magnetoresistance effect sensor | |
JPH11194161A (en) | Sensor for detecting orientation of external field through a reluctance sensor element | |
WO2017173992A1 (en) | Anisotropic magnetoresistance (amr) sensor not requiring set/reset device | |
JP2004220692A5 (en) | ||
JP2001014615A5 (en) | ||
JP3562447B2 (en) | Magnetoresistive thin film magnetic head | |
JP2008209224A (en) | Magnetic sensor | |
DE69332038T2 (en) | Magnetoresistance effect element | |
WO2019111766A1 (en) | Magnetic sensor | |
CN113933768B (en) | AMR reluctance structure and Wheatstone bridge | |
JP3035836B2 (en) | Magnetoresistive element | |
US11719772B2 (en) | AMR (XMR) sensor with increased linear range | |
JPH03276411A (en) | Magneto-resistance effect type head device | |
US20170123018A1 (en) | Magnetic sensor | |
DE60000420T2 (en) | Magnetic sensor with soft magnetic metallic element in zigzag shape | |
JP4273847B2 (en) | Manufacturing method of magnetic sensor | |
US20120032673A1 (en) | Magnetic sensor | |
JPS6064484A (en) | Ferromagnetic magnetoresistance effect alloy film | |
JP3766944B2 (en) | Magnetoresistive effect element | |
JPH0462476B2 (en) | ||
JP2003282999A (en) | Magnetic sensor | |
JP2003298140A (en) | Magnetoresistive element | |
JPH06103761B2 (en) | 4-phase differential rotation sensor | |
JP3555412B2 (en) | Magnetoresistive sensor | |
JP2002071775A (en) | Magnetometrioc sensor |