JP2001068827A - Fine pattern forming device and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a fine pattern to be very accurately formed by a method wherein an ink path is provided respectively to fine openings provided on the surface of a silicon substrate, and an ink feed device is connected to the ink paths. SOLUTION: A silicon substrate 2 is equipped with fine holes 3 which penetrate through it from its front surface 2A to the rear surface 2B, and the openings 3A of the fine holes 3 on a front surface side are made to come out in a gap between the silicon substrate 2 and a support member 6. The gap is formed through such a manner where the flange 6b of the support member 6 is fixed to the peripheral edge of the front surface 2A of the silicon substrate 2, an opening 6c is formed at the center of the base 6a of the support member 6, and the one end of an ink path 8 is connected to the opening 6c. The other end of the ink path 8 is connected to an ink feed device 9. By this setup, a fine pattern can be very accurately formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine pattern forming apparatus and a fine pattern forming method using the same, and more particularly to a pattern forming method for manufacturing a flat display such as a liquid crystal display or a plasma display, and a conductive pattern forming method for a printed wiring board. The present invention relates to a fine pattern forming apparatus and a fine pattern forming method applicable to the present invention.

[0002]

2. Description of the Related Art For example, a fine pattern such as a color filter for a liquid crystal display is formed by a photolithography method, a printing method, an electrodeposition method, or the like. Among these forming methods, the photolithography method is superior in terms of accuracy and appearance quality. Also, in forming a conductor pattern of a printed wiring board, a photolithography method capable of performing highly accurate wiring is used.

In an example of manufacturing a color filter by a photolithography method, a photosensitive resist is applied on a thin metal film such as chromium formed by sputtering or evaporation, and a resist pattern is formed by exposing and developing through a photomask. A black matrix is formed by fabricating and using the mask as a mask to pattern the metal thin film by etching. Next, after a photosensitive resist containing a coloring pigment is applied, the resist is exposed and developed through a photomask to form a coloring layer of a color filter. On the other hand, in a printed wiring board, a conductor pattern is manufactured by forming a photosensitive resist pattern on a copper plating layer and etching the copper plating layer using the pattern as a mask.

[0004]

However, the process of forming a color filter pattern and a conductor pattern using the photolithography method described above is complicated, which hinders a reduction in manufacturing cost.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described circumstances, and a fine pattern forming apparatus capable of forming a fine pattern with high accuracy by directly drawing ink, and a fine pattern forming apparatus having a simple process. It is an object to provide a forming method.

[0006]

In order to achieve the above object, a fine pattern forming apparatus of the present invention comprises a silicon substrate and a plurality of fine patterns provided so as to penetrate from the front surface to the back surface of the silicon substrate. A hole, a support member disposed on the front surface side of the silicon substrate, an ink flow path for supplying ink to the opening of the fine hole on the silicon substrate surface side, and the ink flow path. And an ink supply device.

Further, the fine pattern forming apparatus of the present invention
The nozzle was configured so as to protrude from the opening of the fine hole on the back side of the silicon substrate.

Further, the fine pattern forming apparatus of the present invention comprises:
The wall surface of the micropores had a silicon oxide layer, and the nozzle was made of silicon oxide.

Further, the fine pattern forming apparatus of the present invention
The configuration was such that the opening diameter of the micropores was in the range of 1 to 100 μm, and the pitch of the micropores was in the range of 1 to 1000 μm.

Further, the fine pattern forming apparatus according to the present invention comprises:
The configuration was such that the linear expansion coefficient of the support member was in the range of 1/10 to 10 times the linear expansion coefficient of the silicon substrate.

Further, the fine pattern forming apparatus of the present invention comprises:
The cross-sectional shape of the micropores perpendicular to the axial direction was one or more of a circle, an ellipse, and a polygon.

Further, the fine pattern forming apparatus of the present invention comprises:
The vertical cross-sectional shape along the axial direction of the fine hole was a rectangle, or the trapezoidal shape on the back side of the silicon substrate was a trapezoid.

Further, the fine pattern forming apparatus of the present invention is configured such that the fine holes are divided into two or more groups, and a separate ink flow path is provided for each fine hole group.

In the method of forming a fine pattern according to the present invention, the ink supplied from the ink flow path is supplied to each of the fine holes while the fine pattern forming apparatus and the pattern forming body are relatively scanned in a predetermined direction. , A stripe-shaped pattern is formed by continuously ejecting the pattern on the pattern formation body.

Each of the constituent stripes of the pattern is formed by supplying ink from a plurality of fine holes arranged on the same row along the scanning direction.

Further, in the method of forming a fine pattern according to the present invention, the above-described fine pattern forming apparatus is disposed at a predetermined position on a pattern forming object, and a predetermined amount of ink supplied from an ink flow path is supplied to each fine hole. The pattern is formed by discharging the ink on the pattern forming body through the substrate.

According to the present invention, the ink ejected from the fine holes of the silicon substrate adheres to the pattern-formed body and the image is directly drawn, and the ink adhesion amount can be changed arbitrarily by changing the ink supply amount. Can be.

[0018]

Embodiments of the present invention will be described below with reference to the drawings.

The fine pattern forming apparatus (First Embodiment) FIG. 1 is a schematic sectional view showing an embodiment of a fine pattern forming apparatus of the present invention. In FIG. 1, a fine pattern forming apparatus 1 includes a silicon substrate 2 and a support member 6 disposed on the surface 2A side of the silicon substrate 2.
And an ink passage 8 for supplying ink to a gap between the silicon substrate 2 and the support member 6, and an ink supply device 9 connected to the ink passage 8.

The silicon substrate 2 extends from the front surface 2A side to the back surface 2A.
A plurality of fine holes 3 penetrating to the B side are provided, and an opening 3a on the surface 2A side of the fine holes 3 is exposed to a void formed by the silicon substrate 2 and the support member 6. The material of the silicon substrate 2 is preferably a single crystal of silicon, and the thickness is preferably about 200 to 500 μm. Such a silicon substrate 2 has a linear expansion coefficient of about 2.6 × 1.
Since it is as low as 0 ^-6 / K, the shape change due to temperature is extremely small.

The fine hole 3 has a circular cross section perpendicular to its axial direction (a cross section parallel to the surface 2A of the silicon substrate 2).
The longitudinal section along the axial direction (the section perpendicular to the surface 2A of the silicon substrate 2) is a rectangular space having a rectangular shape, and the silicon oxide layer 4 is provided on the wall surface. Usually, the thickness of this silicon oxide layer 4 is 5000
It is about 10000Å. In the illustrated example, the opening diameter, number of formations, formation pitches, and the like of the fine holes 3 having the silicon oxide layer 4 are simplified to explain the configuration of the apparatus. The aspect ratio of the fine holes 3 can be appropriately set in the range of about 1 to 100. The number and pitch of the fine holes 3 are as follows:
It can be appropriately set according to the shape of the pattern formed by the fine pattern forming apparatus 1, the forming method, and the like, and the formation pitch is preferably at least about 1 μm.

The cross-sectional shape of the fine hole 3 may be elliptical, polygonal, or a special shape other than the circular shape. Further, the fine holes 3 may be composed of two or more kinds of fine holes having different cross-sectional shapes. Oval cross section,
In the case of a rectangle, the opening diameter in the longitudinal direction can be appropriately set in a range of 5 to 500 μm. The vertical cross-sectional shape of the fine hole 3 may be a trapezoid (taper shape) in which the back surface 2B side of the silicon substrate 2 is narrow, in addition to the above-described rectangle.

The support member 6 is provided on the surface 2 A of the silicon substrate 2 and holds the silicon substrate 2. In the illustrated example, the support member 6 is a silicon substrate 2
A base 6a having the same planar shape as above, a flange 6b provided at the periphery of the base 6a, and an opening 6c provided at the center of the base 6a, and the periphery of the front surface 2A side of the silicon substrate 2 at the flange 6b. It is fixed to the part. Thereby, a space for supplying ink is formed between the silicon substrate 2 and the support member 6. The support member 6 is made of a material having a linear expansion coefficient in the range of 1/10 to 10 times the linear expansion coefficient of the silicon substrate 2, for example, Pyrex glass (trade name: Corning # 7740, linear expansion coefficient = 3.5). ×
10 ⁻⁶ / K), SUS304 (linear expansion coefficient = 17.3 ×)
It is preferable to use 10 ⁻⁶ / K) or the like. This allows
The distortion generated between the silicon substrate 2 and the support member 6 due to heat is extremely small, the flatness of the silicon substrate 2 is maintained, and a pattern with high positional accuracy can be formed.

The ink flow path 8 is connected to the opening 6c of the support member 6, and the other end is connected to an ink supply device 9. Although one pipe-shaped ink flow path 8 is connected in the illustrated example, a plurality of openings 6c are provided in consideration of the size of the fine pattern forming apparatus 1, the uniformity of the ink flow pressure, and the like. The ink passage 8 may be connected to the portion 6c. Further, by processing the support member 6 and the silicon substrate 2, an ink flow path may be formed inside the support member 6 and / or the silicon substrate 2.

The ink supply device 9 is not particularly limited, and may be a continuous supply pump, a fixed-rate supply pump, or the like.
It can be appropriately selected according to the purpose of use of the fine pattern forming apparatus 1.

The fine pattern forming apparatus 1 according to the present invention can discharge a small amount of ink from the fine holes 3 of the silicon substrate 2 with high precision, and control the ink supply device 9 to reduce the supply amount. It is possible to arbitrarily set the ink discharge amount by changing. Therefore, a high-precision pattern can be stably formed on the pattern forming object by direct writing.

(Second Embodiment) FIG. 2 is a schematic sectional view showing another embodiment of the fine pattern forming apparatus of the present invention. As shown in FIG. 2, the fine pattern forming apparatus 1 '
The basic structure is the same as that of the fine pattern forming apparatus 1 described above, and a nozzle 5 is protruded from the opening 3b of the fine hole 3 on the back surface 2B side of the silicon substrate 2. This nozzle 5
Is made of silicon oxide, is formed integrally with the silicon oxide layer 4, and the protrusion amount can be appropriately set in a range of 0 to 100 μm. By providing such a nozzle 5, the ink ejected from the fine holes 3 is prevented from adhering to the back surface 2 </ b> B side of the silicon substrate 2.

(Third Embodiment) FIG. 3 is a schematic sectional view showing another embodiment of the fine pattern forming apparatus of the present invention, and FIG. 4 is a bottom view of the fine pattern forming apparatus shown in FIG. . 3 and 4, the fine pattern forming apparatus 11 includes three continuous device sections 11a, 11b, 1
1c, a common silicon substrate 12, three support members 16 disposed on the surface 12A side of the silicon substrate 12, and three ink members for supplying ink to the gaps between the silicon substrate 12 and each support member 16. Ink flow paths 18 and ink supply devices 19a, 1 connected to these ink flow paths 18
9b and 19c.

The silicon substrate 12 is provided with each device section 11a, 1
Each of 1b and 11c is provided with a plurality of fine holes 13 penetrating from the front surface 12A side to the rear surface 12B side, and the opening 13a of the fine holes 13 on the front surface 12A side is formed by the silicon substrate 12 and each support member 16. Exposed in each of the voids. The material of the silicon substrate 12 is the silicon substrate 2 described above.
The thickness can be set in the same range as that of the silicon substrate 2.

The fine holes 13 are provided in the respective device sections 11a, 11b,
It is formed in such a pattern that a plurality thereof are arranged on the same row along a predetermined direction (the direction of arrow A in FIG. 4) for each 11c. That is, in the device section 11a, a plurality of rows of the fine holes 13 arranged along the direction of the arrow A are formed at a pitch P1, and similarly, in the device sections 11b and 11c, the rows of the fine holes 13 are formed at the pitch P1. In a plurality of rows. Then, the fine holes 1 in each of the device sections 11a, 11b, 11c
Row 3 is displaced from each other at a pitch P2 (P1 = 3 × P2). Therefore, as a whole of the fine pattern forming apparatus 11, a row of fine holes of each of the device portions 11a, 11b, 11c is repeated at a pitch P2. They are arranged. The cross-sectional shape, vertical cross-sectional shape, opening diameter,
The formation pitch can be appropriately set in the same manner as in the case of the fine holes 3 described above. Further, the silicon oxide layer 14 formed on the wall surface of the fine hole 13 can be the same as the silicon oxide layer 4 described above. Note that, in the illustrated example, the opening diameter, number of formations, formation pitches, and the like of the fine holes 13 having the silicon oxide layer 14 are simplified to facilitate the description of the configuration of the device.

The support member 16 is formed of the silicon substrate 12 described above.
Is provided on the side of the surface 12A of the substrate and holds the silicon substrate 12. In the illustrated example, the support member 16 is provided at the center of the base 16a, the flange 16b provided on the peripheral edge of the base 16a, and the center of the base 16a, similarly to the support member 6 described above. The opening 16c is fixed to the surface 12A of the silicon substrate 12 at the flange 16b. This allows
A gap for supplying ink is formed between the silicon substrate 12 and each support member 16. As for the material of the support member 16, it is preferable to use a material having a linear expansion coefficient in the range of 1/10 to 10 times the linear expansion coefficient of the silicon substrate 12, similarly to the above-described support member 6.

The ink flow path 18 is provided for each of the support members 16 described above.
The other end is connected to the ink supply device 19a, 19b, 19c. The ink supply devices 19a, 19b, and 19c can be appropriately selected according to the purpose of use of the fine pattern forming device 11, such as a continuous supply pump and a fixed-rate supply pump. In the illustrated example, the number of the ink passages 18 provided in each support member 16 is one. However, in consideration of the uniformity of the ink flow pressure and the like, a plurality of openings 16 c are provided in one support member 16. Provided, each opening 16c
May be connected to the ink flow path 18. Further, the ink flow path may be formed inside the support member 16.

The fine pattern forming apparatus 11 of the present invention can discharge a very small amount of ink from the fine holes 13 of the silicon substrate 12 with high precision, and can use a different kind of ink from the ink supply apparatuses 19a, 19b and 19c. By supplying the ink, a pattern can be formed by direct drawing with a desired ink for each of the device sections 11a, 11b, and 11c.
In particular, it is advantageous for forming a stripe pattern by the formation method of the present invention described later. Since the fine pattern forming apparatus 11 has the unit sections 11a, 11b, and 11c integrated, there is no need to join a plurality of apparatuses, and the positional accuracy of each apparatus is extremely high. Further, it is possible to arbitrarily set the ink discharge amount by controlling the ink supply devices 19a, 19b, and 19c to change the supply amount.

In the fine pattern forming apparatus 11 as well, a nozzle as shown in FIG. 2 may be protruded from the opening 13b of the fine hole 13 on the back surface 12B side of the silicon substrate 12.

(Fourth Embodiment) FIG. 5 is a view showing another embodiment of the fine pattern forming apparatus of the present invention, and FIG.
Is a schematic sectional view, and (B) is a bottom view. In FIG.
The fine pattern forming apparatus 21 includes a silicon substrate 22, a support member 26 disposed on the surface 22 </ b> A side of the silicon substrate 22, and three types of ink flow paths 28 a formed in the silicon substrate 22 and the support member 26. 28b, 28c,
Ink supply devices 29a, 29 connected to each ink flow path
b, 29c.

The silicon substrate 22 has a plurality of fine holes 23 penetrating from the front surface 22A side to the rear surface 22B side, and the opening 23a on the front surface 22A side of the fine holes 23 is formed in a groove shape on the front surface 22A side. Kinds of ink flow paths 28a, 28b,
28c. Silicon substrate 22
Can be the same as that of the silicon substrate 2 described above, and the thickness can be set in the same range as that of the silicon substrate 2.

A plurality of fine holes 23 are arranged on the same row along a predetermined direction (the direction of arrow a in FIG. 5B), and a plurality of rows are formed at a pitch P. In the illustrated example, six micro-hole rows 23 in which a plurality of micro-holes are arranged along the direction of arrow a.
A, 23B, 23C, 23D, 23E and 23F are formed at a pitch P. The cross-sectional shape, vertical cross-sectional shape, opening diameter, and formation pitch of such fine holes 23 can be appropriately set in the same manner as in the above-described fine holes 3. Further, the silicon oxide layer 24 formed on the wall surface of the fine hole 23 can be the same as the silicon oxide layer 4 described above. In the example shown,
The opening diameter, number of formations, formation pitches, and the like of the fine holes 23 having the silicon oxide layer 24 are simplified to facilitate description of the configuration of the device.

The support member 26 is formed of the silicon substrate 22 described above.
Is a plate-shaped member arranged on the surface 22A side of the support member 26 to hold the silicon substrate 22, and an ink flow path 28c is formed in a groove shape on the silicon substrate 22 side of the support member 26.

FIG. 6 is a cross-sectional view of the silicon substrate 22 shown in FIG.
FIG. 4 is a cross-sectional view of the support member 26 shown in FIG.

As shown in FIGS. 5A and 6,
In the silicon substrate 22, a groove-shaped ink flow path 28a formed to connect each opening of the fine hole arrays 23A and 23D and the ink supply device 29a, and the fine hole array 23
A groove-shaped ink flow path 28b formed to connect each opening of B and 23E and the ink supply device 29b is formed. In addition, an ink flow path 28c is formed in a groove shape on each opening of the fine hole rows 23C and 23F. Further, as shown in FIGS. 5 (A) and 7, a groove-shaped ink formed to connect each opening of the fine hole arrays 23C and 23F and the ink supply device 29c is provided on the support member 26. A channel 28c is formed.

The supporting member 26 and the silicon substrate 2
And two types of ink flow paths 28a, 28 formed between them.
b and 28c are independent of each other as shown in FIG. The material of the support member 26 is preferably a material having a linear expansion coefficient in the range of 1/10 to 10 times the linear expansion coefficient of the silicon substrate 22, as in the case of the above-described support member 6.

The above-described ink flow paths 28a, 28b, 28
The end of c is connected to the ink supply devices 29a, 29b, 29c. Ink supply devices 29a, 29b, 29c
Is not particularly limited, and may be any of a continuous supply pump, a fixed-rate supply pump, and the like, and can be appropriately selected according to the purpose of use of the fine pattern forming apparatus 21.

The fine pattern forming apparatus 21 of the present invention can discharge a very small amount of ink from the fine holes 23 of the silicon substrate 22 with high precision, and can use a different type of ink from the ink supply apparatuses 29a, 29b, and 29c. By supplying ink, each ink flow path 28a, 28b, 28c
Pattern formation by direct drawing with desired ink for each of the micro-hole rows divided into groups (group of micro-hole rows 23A and 23D, group of micro-hole rows 23B and 23E, group of micro-hole rows 23C and 23F) In particular,
This is advantageous for forming a stripe pattern by the formation method of the present invention described later. Then, the fine pattern forming apparatus 2
In No. 1, since a plurality of devices are not joined for each ink, the positional accuracy of each fine hole row is extremely high.
Further, it is possible to arbitrarily set the ink discharge amount by controlling the ink supply devices 29a, 29b, and 29c to change the supply amount.

Incidentally, also in the fine pattern forming apparatus 21, a nozzle as shown in FIG. 2 may be protruded from the opening 23b of the fine hole 23 on the back surface 22B side of the silicon substrate 22.

(Fifth Embodiment) FIG. 9 is a plan view showing another embodiment of the fine pattern forming apparatus of the present invention. In FIG. 9, a fine pattern forming apparatus 31 includes a silicon substrate 32, a support member disposed on the surface 32 </ b> A side of the silicon substrate 32, and an ink flow for supplying ink to a gap between the silicon substrate 32 and the support member. And an ink supply device connected to the ink flow path. However,
FIG. 9 shows only the silicon substrate 32, and does not show the support member, the ink flow path, and the ink supply device.

The silicon substrate 32 has a plurality of fine holes 33 penetrating from the front surface 22A side to the rear surface side.
Are formed at positions forming one pattern 35, and a plurality of (ten in the illustrated example) patterns 35 are provided on the silicon substrate 32. Note that the fine holes 33 are shown only in one pattern 35, and in the other patterns 35, only the outline thereof is shown by a chain line.

The material of the silicon substrate 32 can be the same as that of the silicon substrate 2 described above, and the thickness thereof is
Can be set in the same range as. In addition, micropore 3
3 cross-sectional shape, vertical cross-sectional shape, opening diameter, formation pitch,
It can be set appropriately in the same manner as in the case of the fine holes 3 described above. Further, the fine holes 33 may have a silicon oxide layer on the wall surface, and this silicon oxide layer may be the same as the silicon oxide layer 4 described above.

Such a silicon substrate 32 uses a support member having a flange on the periphery like the support member 6 described above, and the flange of the support member is fixed to the peripheral portion (the area shown by oblique lines in FIG. 9). be able to. Then, an ink supply path can be connected to the opening of the support member, and an ink supply device can be connected to the other end of the ink supply path.

Such a fine pattern forming apparatus 31 is
The ink is ejected from the fine holes 33 of the silicon substrate 32 in an appropriate amount such that the inks discharged from the adjacent fine holes 33 come into contact with each other, and the pattern 3 is drawn directly.
5 can be stably formed with high precision on a pattern forming object. The ink discharge amount can be adjusted by controlling the ink supply device.

In the above example, all of the plurality of patterns 35 have the same shape. However, the present invention is not limited to this. For example, the plurality of patterns 35 may have an arbitrary shape such as a conductor pattern of a printed wiring board.

In the fine pattern forming apparatus 31 as well, a nozzle as shown in FIG. 2 may be protruded from the opening of the fine hole 33 on the back side of the silicon substrate 32.

Manufacturing Example of Fine Pattern Forming Apparatus Next, the manufacturing of the fine pattern forming apparatus of the present invention will be described with reference to FIGS. 10 and 11 using the fine pattern forming apparatus 1 'shown in FIG. 2 as an example.

First, a silicon oxide film 2 'having a thickness of about 1 to 2 μm is formed on the entire surface by oxidizing the silicon substrate 2 whose surface has been cleaned in a thermal oxidation furnace (FIG. 10A).

Next, a photosensitive resist is applied to one surface of the silicon substrate 2 and exposed through a predetermined photomask.
By developing, a resist pattern R is formed (FIG. 10B). Next, using this resist pattern R as a mask, the silicon oxide film 2 'is patterned using, for example, BHF16 (aqueous solution of 22% ammonium hydrogen difluoride) (FIG. 10C). This patterning is performed by R
Dry etching using IE (Reactive Ion Etching) (process gas: CHF ₃ ) is also possible. In such patterning, the resist pattern R
The portion of the silicon oxide film 2 'where no is provided is removed.

Next, the patterned silicon oxide film 2 '
Is used as a mask to form fine holes 3 at a desired depth in the silicon substrate 2 (FIG. 10D). The drilling of the fine holes 3 is performed, for example, by ICP-RIE (Inductively Coupled Pla
sma (Reactive Ion Etching) etching, wet etching, and deep RIE etching. The drilling of the fine holes 3 is performed to a predetermined depth that does not penetrate the silicon substrate 2.

Next, the resist pattern R and the silicon oxide film 2 'are removed, and then oxidized again in a thermal oxidation furnace to form a silicon oxide layer 4 having a thickness of about 5000-10000 ° on the entire surface (FIG. 10 (E)).

Next, the flange portion 6b of the support member 6 is fixed to the peripheral portion on the surface side (the side on which the fine holes are formed) of the silicon substrate 2 (FIG. 11A). This fixation can be performed, for example, by anodic bonding.

Next, only the outer surface side of the silicon substrate 2 is B
Immersion in HF 16 to remove the silicon oxide layer 4 at this portion to expose the back surface of the silicon substrate 2;
Etching is performed from the back side of the silicon substrate 2 with H (tetramethylammonium hydroxide) (FIG. 11).
(B)). In this etching, since the silicon oxide layer 4 formed on the inner wall of the fine hole 3 has resistance to TMAH, the fine tube composed of the silicon oxide layer 4 is
Will protrude to the side.

Next, the tip of the fine tube made of the silicon oxide layer 4 is dissolved and removed by the BHF 16 to open it (FIG. 11C), and then the back surface of the silicon substrate 2 is etched again by TMAH. Then, when the nozzle 5 composed of the silicon oxide layer 4 having a predetermined length is formed, the etching by TMAH is completed (FIG. 11).
(D)). After that, an ink supply device is connected to the opening 6c of the support member 6 via an ink flow path, whereby FIG.
The fine pattern forming apparatus 1 'of the present invention as shown in FIG.

The etching of the back side of the silicon substrate 2 is performed by using RIE (Reactive Io
n Etching) is also possible.

In the fine pattern forming apparatus 1 as shown in FIG. 1, a fine hole 3 is formed so as to penetrate the silicon substrate 2 in a process corresponding to FIG. In a step corresponding to (C), the microtubules composed of the protruding silicon oxide layer 4 can be manufactured by dissolving and removing them with hydrofluoric acid.

[0062] a fine pattern forming method of the present invention (first embodiment) FIG. 12 is a diagram for explaining an embodiment of a fine pattern forming method of the present invention using the fine pattern forming apparatus 11 of the present invention as described above is there. In FIG.
Ink supply device 1 of fine pattern forming device 11 of the present invention
9a, 19b, and 19c, while supplying the ink A, the ink B, and the ink C through the respective ink flow paths 18, the pattern forming object S is moved in the predetermined direction (the direction of the arrow A) with respect to the fine pattern forming apparatus 11. ). The scanning direction A coincides with the arrangement direction A of the fine holes in the fine pattern forming apparatus 11 (see FIG. 4).
In this case, the silicon substrate 1 of the fine pattern forming apparatus 11
The gap between 2 and the pattern forming body S can be set in a range of about 0.1 to 5 mm.

Thus, the fine holes 1 in the silicon substrate 12
3, the pattern forming body S
A stripe pattern in which ink A, ink B, and ink C are repeatedly arranged in this order is formed by direct drawing. In this case, the pitch of each stripe is P2.
Since this stripe-shaped pattern is formed by ink in which one stripe is discharged from a plurality of fine holes on the same row, even if the discharge amount from each fine hole is small, the scanning speed of the pattern formation object S is small. And the pattern formation speed can be increased. Such a striped pattern is formed with extremely high precision corresponding to the diameter of the fine holes 13, and the process is simpler than the conventional photolithography method.

When the pattern forming object S has flexibility such as a resin film, a backup roller is arranged on the back surface of the pattern forming object S so as to face the fine pattern forming apparatus 11, and It is preferable that the formed body S is conveyed while applying tension and directly drawn.

(Second Embodiment) FIG. 13 is a view for explaining another embodiment of the fine pattern forming method of the present invention, and is an example using a fine pattern forming apparatus 31 of the present invention. In FIG. 13, the fine pattern forming apparatus 31
(In the illustrated example, only the silicon substrate 32 is shown) is disposed at a predetermined position of the pattern forming object S, and a certain amount of ink supplied from the ink flow path is applied onto the pattern forming object via each fine hole 33. A pattern is formed by discharging. Thereafter, the pattern forming body S is transported in the direction of arrow A by a predetermined distance, and the same pattern formation is performed. By repeating such an operation, a desired pattern 35 can be formed on the pattern formation target S. In addition, the gap between the silicon substrate 32 of the fine pattern forming apparatus 31 and the pattern forming object S can be set in a range of about 0.1 to 5 mm.

Further, a pattern 35 composed of a plurality of fine holes 33 in the fine pattern forming apparatus 31 is used as, for example, a conductor pattern of a printed wiring board, and a conductor paste is used as ink, so that it is not required to use a photolithography method. A printed wiring board can be easily manufactured.

[0067]

Next, the present invention will be described in more detail with reference to examples.

[Preparation of Fine Pattern Forming Apparatus]
CA-cleaned silicon substrate (diameter 3 inches, thickness 200
μm, single-side polishing, crystal orientation <100>, coefficient of linear expansion =
2.6 × 10 ⁻⁶ / K). This silicon substrate was oxidized in a thermal oxidation furnace under the following conditions to form a silicon oxide film having a thickness of about 2 μm on the entire surface.

(Thermal oxidation conditions) Heating temperature: 1050 ° C. Hydrogen gas supply: 1 slm Oxygen gas supply: 1 slm Heating time: about 15 hours

Next, a photosensitive resist (Micro Position, manufactured by Shipley Co., Ltd.) is applied to the polished surface side by a spin coat method, dried, and then exposed and developed through a predetermined photomask, thereby forming the resist. A pattern was formed. In this resist pattern, circular openings (diameter: 10 μm) are formed on the same line at a pitch of 20 μm in the X-axis direction, and the opening rows are arranged at a pitch of 20 μm in the Y-axis direction. Then, using the resist pattern as a mask, BHF 16 (ammonium monohydrogen difluoride 22
% Aqueous solution), and the silicon oxide film in the portion where the resist pattern was not provided was dissolved and removed.

Next, using the patterned silicon oxide film as a mask, ICP-RIE (Inductively Coupled Pla
High aspect etching by sma (Reactive Ion Etching) was performed, and a fine hole having a diameter of 10 μm and a depth of 200 μm was formed. Thereafter, the resist pattern was removed using a mixed solution of sulfuric acid and hydrogen peroxide, and the mask of the silicon oxide film was further removed using hydrofluoric acid.

Next, the silicon substrate having the fine holes formed therein is oxidized in a thermal oxidation furnace under the same conditions as above except that the heating time is set to about 3 hours. Then, a silicon oxide layer having a thickness of about 5000 ° was formed on the entire surface. By this oxidation treatment, a silicon oxide layer was also formed on the wall surfaces of the fine holes.

Next, Pyrex glass (Corning # 774, trade name) on which a flange and an opening have been formed.
0, coefficient of linear expansion = 3.5 × 10 ⁻⁶ / K, diameter 3 inches)
The support member was fixed to the peripheral portion on the surface side (the side on which fine holes were formed) of the silicon substrate by anodic bonding (temperature: 500 ° C., applied voltage: about 750 V, application time: 10 minutes).

Next, only the outer surface side of the silicon substrate is BH
The silicon oxide layer was removed by immersion in F16 to expose the back surface of the silicon substrate. Thereafter, the back surface of the silicon substrate was immersed in TMAH (tetramethylammonium hydroxide) for etching. As a result, on the back surface of the silicon substrate, a fine tube made of the silicon oxide layer formed on the wall surface of the fine hole by the above-described oxidation treatment protruded by about 5 μm.

Next, the tip of the fine tube made of the silicon oxide layer is opened by immersing it in BHF 16 and dissolving and removing it. Thereafter, the back surface of the silicon substrate is etched by TMAH, and a nozzle having a length of 10 μm is formed. Formed.

Next, an ink flow path of a resin pipe was connected to the opening of the support member, and the other end of the resin pipe was connected to an ink supply device (1500XL manufactured by EFD).
Thus, a fine pattern forming apparatus of the present invention was obtained.

[Formation of Fine Pattern] An ink supply device was filled with ink (Color Mosaic CR-7001 manufactured by Fuji Film Ohlin Co., Ltd.).
A glass substrate (100 mm × 100 mm) was prepared.

Next, while scanning the glass substrate at a constant speed of 50 mm / sec in the X-axis direction of the fine pattern forming apparatus, the ink is supplied from the ink supply apparatus to the silicon substrate, and the ink is discharged from the fine holes. Then, a stripe-shaped pattern was drawn and dried. Each stripe of the obtained pattern has a line width of 25 ± 1 μm and a line pitch of 25 ± 1 μm.
1 μm, which was extremely high precision.

[0079]

As described above in detail, according to the present invention, the fine pattern forming apparatus can discharge a very small amount of ink from the fine holes of the silicon substrate with high accuracy, and can change the ink supply amount. It is possible to arbitrarily set the ejection amount, and it is possible to easily and stably perform high-precision pattern formation by directly drawing by attaching ink onto the pattern forming body. Further, in the pattern forming method of the present invention for relatively scanning the fine pattern forming apparatus and the pattern forming object, a stripe pattern can be formed with high accuracy, and a plurality of strips arranged in the same row along the scanning direction can be formed. By discharging ink from the fine holes, even if the amount of ink discharged from one fine hole is small,
The pattern formation speed can be increased. Further, in the pattern forming method in which the fine pattern forming apparatus of the present invention is positioned and installed at a predetermined position on a pattern forming object and a fixed amount of ink is discharged from each fine hole, a desired pattern is repeatedly and simply and accurately formed. It can be applied to matrix color filters, conductor pattern formation of printed wiring boards, and the like.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing one embodiment of a fine pattern forming apparatus of the present invention.

FIG. 2 is a schematic sectional view showing another embodiment of the fine pattern forming apparatus of the present invention.

FIG. 3 is a schematic sectional view showing another embodiment of the fine pattern forming apparatus of the present invention.

FIG. 4 is a bottom view of the fine pattern forming apparatus shown in FIG. 3;

5A and 5B are diagrams showing another embodiment of the fine pattern forming apparatus of the present invention, wherein FIG. 5A is a schematic sectional view and FIG. 5B is a bottom view.

6 is a cross-sectional view of the support member of the fine pattern forming apparatus shown in FIG. 5, taken along line AA.

7 is a cross-sectional view of the support member of the fine pattern forming apparatus shown in FIG. 5, taken along the line BB.

8 is a perspective view showing an ink flow path of the fine pattern forming apparatus shown in FIG.

FIG. 9 is a schematic sectional view showing another embodiment of the fine pattern forming apparatus of the present invention.

FIG. 10 is a process chart showing a manufacturing example of the fine pattern forming apparatus of the present invention.

FIG. 11 is a process chart showing a manufacturing example of the fine pattern forming apparatus of the present invention.

FIG. 12 is a perspective view showing one embodiment of a fine pattern forming method of the present invention.

FIG. 13 is a perspective view showing another embodiment of the fine pattern forming method of the present invention.

[Explanation of symbols]

1, 1 ', 11, 21, 31 ... fine pattern forming apparatus 2, 12, 22, 32 ... silicon substrate 3, 13, 23, 33 ... fine hole 3a, 13a, 23a ... opening 3b, 13b, 23b ... opening Parts 4, 14, 24: Silicon oxide layer 5: Nozzles 6, 16, 26: Holding members 8, 18, 28: Ink flow paths 9, 19a, 19b, 19c, 29a, 29b, 29c
… Ink supply device S… Pattern substrate

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2C057 AF01 AG04 AG05 AG07 AG12 AG14 AG16 AH05 AJ10 AN01 AP13 AP28 AP32 AP33 AP56 AQ02 BF06 2H088 EA67 FA30 HA01 HA02 MA20 5E343 AA26 BB72 DD15 FF02 GG11

Claims (11)

[Claims] 1. A silicon substrate, and a plurality of fine holes provided so as to penetrate from the front surface to the back surface of the silicon substrate;
A support member disposed on the surface side of the silicon substrate, an ink flow path for supplying ink to the opening of the fine hole on the silicon substrate surface side, and an ink supply device connected to the ink flow path And a fine pattern forming apparatus. 2. The fine pattern forming apparatus according to claim 1, wherein a nozzle is protruded from an opening of the fine hole on the back side of the silicon substrate. 3. The fine pattern forming apparatus according to claim 2, wherein a wall surface of the fine hole has a silicon oxide layer, and the nozzle is made of a silicon oxide. 4. The method according to claim 1, wherein an opening diameter of the fine holes is in a range of 1 to 100 μm, and a formation pitch of the fine holes is in a range of 1 to 1000 μm. The fine pattern forming apparatus as described in the above. 5. The method according to claim 1, wherein a linear expansion coefficient of the supporting member is in a range of 1/10 to 10 times a linear expansion coefficient of the silicon substrate. Fine pattern forming equipment. 6. The micropore according to claim 1, wherein a cross-sectional shape of the micropore perpendicular to the axial direction is at least one of a circle, an ellipse, and a polygon. 3. The fine pattern forming apparatus according to 1. 7. The method according to claim 1, wherein the vertical cross-sectional shape of the fine hole along the axial direction is any one of a rectangular shape and a trapezoidal shape having a narrow rear surface side of the silicon substrate. Fine pattern forming equipment. 8. The fine pattern according to claim 1, wherein the fine holes are divided into two or more groups, and a separate ink flow path is provided for each fine hole group. Forming equipment. 9. The method according to claim 1, wherein the fine pattern forming apparatus and the pattern forming body are relatively scanned in a predetermined direction, and the ink supplied from the ink flow path is finely divided. A method for forming a fine pattern, wherein a stripe pattern is formed by continuously discharging a pattern on a pattern forming body through a hole. 10. The method according to claim 9, wherein each of the constituent stripes of the pattern is formed by supplying ink from a plurality of micro holes arranged on the same row along the scanning direction.
3. The method for forming a fine pattern according to 1. 11. A fine pattern forming apparatus according to claim 1, wherein the fine pattern forming apparatus is disposed at a predetermined position on a pattern forming body, and a predetermined amount of ink supplied from an ink flow path is supplied to each fine hole. Forming a pattern by discharging a pattern on a pattern forming body through the substrate.