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ITRM20010521A1 - Sorgente di bassa tensione di riferimento ad inseguimento a potenza ultra bassa. - Google Patents

Sorgente di bassa tensione di riferimento ad inseguimento a potenza ultra bassa.

Info

Publication number
ITRM20010521A1
ITRM20010521A1 IT2001RM000521A ITRM20010521A ITRM20010521A1 IT RM20010521 A1 ITRM20010521 A1 IT RM20010521A1 IT 2001RM000521 A IT2001RM000521 A IT 2001RM000521A IT RM20010521 A ITRM20010521 A IT RM20010521A IT RM20010521 A1 ITRM20010521 A1 IT RM20010521A1
Authority
IT
Italy
Prior art keywords
voltage reference
reference source
low power
low voltage
ultra
Prior art date
Application number
IT2001RM000521A
Other languages
English (en)
Inventor
Iorio Ercole Di
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT2001RM000521A priority Critical patent/ITRM20010521A1/it
Publication of ITRM20010521A0 publication Critical patent/ITRM20010521A0/it
Priority to US10/230,355 priority patent/US6713996B2/en
Publication of ITRM20010521A1 publication Critical patent/ITRM20010521A1/it
Priority to US10/772,834 priority patent/US6838864B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT2001RM000521A 2001-08-30 2001-08-30 Sorgente di bassa tensione di riferimento ad inseguimento a potenza ultra bassa. ITRM20010521A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT2001RM000521A ITRM20010521A1 (it) 2001-08-30 2001-08-30 Sorgente di bassa tensione di riferimento ad inseguimento a potenza ultra bassa.
US10/230,355 US6713996B2 (en) 2001-08-30 2002-08-28 Ultra low power tracked low voltage reference source
US10/772,834 US6838864B2 (en) 2001-08-30 2004-02-05 Ultra low power tracked low voltage reference source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001RM000521A ITRM20010521A1 (it) 2001-08-30 2001-08-30 Sorgente di bassa tensione di riferimento ad inseguimento a potenza ultra bassa.

Publications (2)

Publication Number Publication Date
ITRM20010521A0 ITRM20010521A0 (it) 2001-08-30
ITRM20010521A1 true ITRM20010521A1 (it) 2003-02-28

Family

ID=11455751

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001RM000521A ITRM20010521A1 (it) 2001-08-30 2001-08-30 Sorgente di bassa tensione di riferimento ad inseguimento a potenza ultra bassa.

Country Status (2)

Country Link
US (2) US6713996B2 (it)
IT (1) ITRM20010521A1 (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148699B1 (en) * 2002-06-24 2006-12-12 Rambus Inc. Technique for calibrating electronic devices
KR100555509B1 (ko) 2003-07-23 2006-03-03 삼성전자주식회사 선택적 전압 레퍼런스로 소모 전력을 절감하는 내부 전압변환기, 이를 구비한 반도체 장치 및 그 방법
US7164259B1 (en) * 2004-03-16 2007-01-16 National Semiconductor Corporation Apparatus and method for calibrating a bandgap reference voltage
US7265529B2 (en) 2004-08-19 2007-09-04 Micron Technologgy, Inc. Zero power start-up circuit
US7256643B2 (en) * 2005-08-04 2007-08-14 Micron Technology, Inc. Device and method for generating a low-voltage reference
US20070233131A1 (en) * 2006-02-28 2007-10-04 Vermillion Technologies, Llc Apparatus and method of creating an intervertebral cavity with a vibrating cutter
US8022685B2 (en) * 2007-02-06 2011-09-20 International Business Machines Corporation Temperature dependent voltage source compensation
US7936153B2 (en) * 2007-02-06 2011-05-03 International Business Machines Corporation On-chip adaptive voltage compensation
US8615767B2 (en) * 2007-02-06 2013-12-24 International Business Machines Corporation Using IR drop data for instruction thread direction
US7895454B2 (en) * 2007-02-06 2011-02-22 International Business Machines Corporation Instruction dependent dynamic voltage compensation
US7971035B2 (en) 2007-02-06 2011-06-28 International Business Machines Corporation Using temperature data for instruction thread direction
US7865750B2 (en) 2007-02-06 2011-01-04 International Business Machines Corporation Fan speed control from adaptive voltage supply
US7779235B2 (en) 2007-02-06 2010-08-17 International Business Machines Corporation Using performance data for instruction thread direction
US7797131B2 (en) * 2007-08-24 2010-09-14 International Business Machines Corporation On-chip frequency response measurement
US8185572B2 (en) * 2007-08-24 2012-05-22 International Business Machines Corporation Data correction circuit
US8005880B2 (en) * 2007-08-24 2011-08-23 International Business Machines Corporation Half width counting leading zero circuit
US20090224741A1 (en) * 2008-03-07 2009-09-10 Broadcom Corporation Low power supply maintaining circuit
US20130234692A1 (en) * 2012-03-07 2013-09-12 Medtronic, Inc. Voltage supply and method with two references having differing accuracy and power consumption
US10285590B2 (en) 2016-06-14 2019-05-14 The Regents Of The University Of Michigan Intraocular pressure sensor with improved voltage reference circuit
US10310537B2 (en) 2016-06-14 2019-06-04 The Regents Of The University Of Michigan Variation-tolerant voltage reference
EP3361347B1 (en) 2017-02-10 2020-12-09 Stichting IMEC Nederland A voltage reference generator and a method for controlling a magnitude of a variation of an output voltage of a voltage reference generator
CN109901650B (zh) * 2017-12-07 2020-11-06 北京确安科技股份有限公司 一种内嵌flash芯片的基准源修调方法
US10528292B2 (en) * 2018-05-22 2020-01-07 Luca De Santis Power down/power-loss memory controller
TWI708253B (zh) * 2018-11-16 2020-10-21 力旺電子股份有限公司 非揮發性記憶體良率提升的設計暨測試方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394078A (en) * 1993-10-26 1995-02-28 Analog Devices, Inc. Two terminal temperature transducer having circuitry which controls the entire operating current to be linearly proportional with temperature
KR0142970B1 (ko) * 1995-06-24 1998-08-17 김광호 반도체 메모리 장치의 기준전압 발생회로
US5726563A (en) 1996-11-12 1998-03-10 Motorola, Inc. Supply tracking temperature independent reference voltage generator
US5898618A (en) * 1998-01-23 1999-04-27 Xilinx, Inc. Enhanced blank check erase verify reference voltage source
US6232828B1 (en) 1999-08-03 2001-05-15 National Semiconductor Corporation Bandgap-based reference voltage generator circuit with reduced temperature coefficient
DE19947115C2 (de) * 1999-09-30 2002-01-03 Infineon Technologies Ag Schaltungsanordnung zur stromsparenden Referenzspannungserzeugung
US6271735B1 (en) * 1999-12-06 2001-08-07 Semiconductor Components Industries, Llc. Oscillator controller with first and second voltage reference
US6452414B1 (en) 2000-11-21 2002-09-17 National Semiconductor Corp. Inc. Low current power-on sense circuit

Also Published As

Publication number Publication date
US6713996B2 (en) 2004-03-30
US20040155641A1 (en) 2004-08-12
US20030057931A1 (en) 2003-03-27
US6838864B2 (en) 2005-01-04
ITRM20010521A0 (it) 2001-08-30

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