GB2291512B - Reference voltage generating circuit to be used for a constant voltage circuit formed of fets - Google Patents
Reference voltage generating circuit to be used for a constant voltage circuit formed of fetsInfo
- Publication number
- GB2291512B GB2291512B GB9518407A GB9518407A GB2291512B GB 2291512 B GB2291512 B GB 2291512B GB 9518407 A GB9518407 A GB 9518407A GB 9518407 A GB9518407 A GB 9518407A GB 2291512 B GB2291512 B GB 2291512B
- Authority
- GB
- United Kingdom
- Prior art keywords
- fets
- reference voltage
- constant voltage
- generating circuit
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3327062A JP2765319B2 (en) | 1991-11-15 | 1991-11-15 | Constant voltage circuit |
JP4020482A JP2876865B2 (en) | 1992-01-09 | 1992-01-09 | Constant voltage circuit |
JP04020481A JP3104365B2 (en) | 1992-01-09 | 1992-01-09 | Reference voltage generation circuit |
JP4038519A JPH05206754A (en) | 1992-01-29 | 1992-01-29 | Reference voltage generating circuit |
GB9223807A GB2261535B (en) | 1991-11-15 | 1992-11-13 | Constant voltage circuit and reference voltage generating circuit to be used therefor |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9518407D0 GB9518407D0 (en) | 1995-11-08 |
GB2291512A GB2291512A (en) | 1996-01-24 |
GB2291512B true GB2291512B (en) | 1996-12-11 |
Family
ID=27517157
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9608050A Expired - Fee Related GB2298724B (en) | 1991-11-15 | 1992-11-13 | Constant voltage circuit |
GB9518407A Expired - Fee Related GB2291512B (en) | 1991-11-15 | 1992-11-13 | Reference voltage generating circuit to be used for a constant voltage circuit formed of fets |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9608050A Expired - Fee Related GB2298724B (en) | 1991-11-15 | 1992-11-13 | Constant voltage circuit |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB2298724B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2404460B (en) | 2003-07-31 | 2006-09-06 | Zetex Plc | A temperature independent low voltage reference circuit |
US10659033B2 (en) * | 2017-11-03 | 2020-05-19 | Texas Instruments Incorporated | High voltage gate driver current source |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5124631A (en) * | 1989-04-26 | 1992-06-23 | Seiko Epson Corporation | Voltage regulator |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH657712A5 (en) * | 1978-03-08 | 1986-09-15 | Hitachi Ltd | REFERENCE VOLTAGE GENERATOR. |
EP0398897A1 (en) * | 1988-12-05 | 1990-11-28 | BELL TELEPHONE MANUFACTURING COMPANY Naamloze Vennootschap | Voltage transducer |
-
1992
- 1992-11-13 GB GB9608050A patent/GB2298724B/en not_active Expired - Fee Related
- 1992-11-13 GB GB9518407A patent/GB2291512B/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5124631A (en) * | 1989-04-26 | 1992-06-23 | Seiko Epson Corporation | Voltage regulator |
Non-Patent Citations (1)
Title |
---|
IBM Technical Disclosure Bulletin Vol.32, No.9B, Feb.1990 pages 4 & 5. * |
Also Published As
Publication number | Publication date |
---|---|
GB2291512A (en) | 1996-01-24 |
GB2298724A (en) | 1996-09-11 |
GB2298724B (en) | 1996-12-11 |
GB9518407D0 (en) | 1995-11-08 |
GB9608050D0 (en) | 1996-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20001113 |