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GB1391910A - Silicon diode array targets - Google Patents

Silicon diode array targets

Info

Publication number
GB1391910A
GB1391910A GB4572071A GB4572071A GB1391910A GB 1391910 A GB1391910 A GB 1391910A GB 4572071 A GB4572071 A GB 4572071A GB 4572071 A GB4572071 A GB 4572071A GB 1391910 A GB1391910 A GB 1391910A
Authority
GB
United Kingdom
Prior art keywords
channels
diodes
silicon
oct
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4572071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne UK Ltd
Original Assignee
English Electric Valve Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by English Electric Valve Co Ltd filed Critical English Electric Valve Co Ltd
Priority to GB4572071A priority Critical patent/GB1391910A/en
Publication of GB1391910A publication Critical patent/GB1391910A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)

Abstract

1391910 Semiconductor diodes arrays; image tubes ENGLISH ELECTRIC VALVE CO Ltd 16 Oct 1972 [1 Oct 1971] 45720/71 Headings H1K and H1D Individual diodes of a silicon array constituting an image tube target are separated by intersecting channels 5 the walls of which are provided with an insulating coating 6. The silicon substrate 1 has a (110) surface, the channels 5 being aligned with (111) planes and being formed using an arisotropic etchant, preferably through a silicon nitride mask. The insulating coating 6 is preferably thermally produced silicon dioxide. The diodes may be made by diffusion of boron to form P-type regions 7 in the N-type substrate 1, the diffusion taking place before or after etching of the channels 5. All electrodes 8 are evaporated on to the diodes at an angle so that metal is deposited a short distance down the side walls of the channels 5 as well as on to the top surface. If the P-type regions 7 are omitted the electrodes 8 may be Schottky contacts. Platinum and chromium are also mentioned as electrode materials.
GB4572071A 1971-10-01 1971-10-01 Silicon diode array targets Expired GB1391910A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4572071A GB1391910A (en) 1971-10-01 1971-10-01 Silicon diode array targets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4572071A GB1391910A (en) 1971-10-01 1971-10-01 Silicon diode array targets

Publications (1)

Publication Number Publication Date
GB1391910A true GB1391910A (en) 1975-04-23

Family

ID=10438301

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4572071A Expired GB1391910A (en) 1971-10-01 1971-10-01 Silicon diode array targets

Country Status (1)

Country Link
GB (1) GB1391910A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150183A (en) * 1987-07-10 1992-09-22 Kernforschungszentrum Karlsruhe Gmbh Switch matrix including optically non-linear elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150183A (en) * 1987-07-10 1992-09-22 Kernforschungszentrum Karlsruhe Gmbh Switch matrix including optically non-linear elements

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee