GB1278499A - Improved process for polishing oxidizable surfaces - Google Patents
Improved process for polishing oxidizable surfacesInfo
- Publication number
- GB1278499A GB1278499A GB4152969A GB4152969A GB1278499A GB 1278499 A GB1278499 A GB 1278499A GB 4152969 A GB4152969 A GB 4152969A GB 4152969 A GB4152969 A GB 4152969A GB 1278499 A GB1278499 A GB 1278499A
- Authority
- GB
- United Kingdom
- Prior art keywords
- oxide
- acid
- oxidizing agent
- gallium
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
1278499 Etching TEXAS INSTRUMENTS Inc 20 Aug 1969 [17 Oct 1968] 41529/69 Heading B6J A substrate, such as a semi-conductor surface, e.g. silicon, germanium, gallium arsenide, indium arsenide, gallium phosphide, indium antimonide, gallium indium arsenide, is polished by etching with a medium containing an oxidizing agent and a nonrefractory oxide, preferably of a transition metal, dispersed as finite particles, the pH being controlled by adding either an acid or a base. The oxidizing agent removes microscopic surface projections to form a sludge which reacts with the oxide to form a residue which can be removed by a solvent. The oxidizing agent may be hydrogen peroxide, an alkali metal bromate, iodate, chlorate, hypohalite, permanganate, peroxide or peroxydisulphate, or a ternary ammonium peroxydisulphate. The oxide may be titanium dioxide, tantalum oxide, niobium oxide, vanadium pentoxide or chromium oxide. There may also be added a buffering compound, e.g. citric acid, sodium citrate, sodium acetate, sodium dihydrogen phosphate, and a thickening agent, e.g. glycols, such as glycerine, some alcohols, or water. The solvent may be sulphuric acid, hydrofluoric acid, acetic acid or hydrochloric acid.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76853768A | 1968-10-17 | 1968-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1278499A true GB1278499A (en) | 1972-06-21 |
Family
ID=25082774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4152969A Expired GB1278499A (en) | 1968-10-17 | 1969-08-20 | Improved process for polishing oxidizable surfaces |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS493022B1 (en) |
| DE (1) | DE1951336A1 (en) |
| FR (1) | FR2020888A1 (en) |
| GB (1) | GB1278499A (en) |
| NL (1) | NL6914998A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1898454A2 (en) | 2006-09-07 | 2008-03-12 | Siltronic AG | Alkaline etching solution for semiconductor wafer and alkaline etching method |
| EP1979431A1 (en) * | 2006-02-01 | 2008-10-15 | Cabot Microelectronics Corporation | Compositions and methods for cmp of phase change alloys |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007061084A1 (en) | 2007-12-19 | 2009-07-02 | Federal-Mogul Sealing Systems Gmbh | Metallic flat gasket and manufacturing process |
-
1969
- 1969-08-20 GB GB4152969A patent/GB1278499A/en not_active Expired
- 1969-09-29 JP JP7696669A patent/JPS493022B1/ja active Pending
- 1969-10-03 NL NL6914998A patent/NL6914998A/xx unknown
- 1969-10-10 FR FR6934775A patent/FR2020888A1/fr not_active Withdrawn
- 1969-10-11 DE DE19691951336 patent/DE1951336A1/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1979431A1 (en) * | 2006-02-01 | 2008-10-15 | Cabot Microelectronics Corporation | Compositions and methods for cmp of phase change alloys |
| EP1979431A4 (en) * | 2006-02-01 | 2009-04-29 | Cabot Microelectronics Corp | Compositions and methods for cmp of phase change alloys |
| EP1898454A2 (en) | 2006-09-07 | 2008-03-12 | Siltronic AG | Alkaline etching solution for semiconductor wafer and alkaline etching method |
| EP1898454A3 (en) * | 2006-09-07 | 2008-06-04 | Siltronic AG | Alkaline etching solution for semiconductor wafer and alkaline etching method |
| US7780868B2 (en) | 2006-09-07 | 2010-08-24 | Siltronic Ag | Alkaline etching solution for semiconductor wafers and alkaline etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2020888A1 (en) | 1970-07-17 |
| NL6914998A (en) | 1970-04-21 |
| JPS493022B1 (en) | 1974-01-24 |
| DE1951336A1 (en) | 1970-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1525675A (en) | Cleaning semiconductor wafers | |
| US4842629A (en) | Method for producing buried regions of raised refractive index in a glass member by ion exchange | |
| US4113551A (en) | Polycrystalline silicon etching with tetramethylammonium hydroxide | |
| US4171242A (en) | Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass | |
| GB1226153A (en) | ||
| US4230522A (en) | PNAF Etchant for aluminum and silicon | |
| US3514407A (en) | Chemical polishing of titanium and titanium alloys | |
| NO153498C (en) | AQUEOUS, LIQUID HYDROGEN PEROX PRELIMINARY MIXTURE AND PROCEDURE FOR PREPARING SUCH A MIXTURE. | |
| GB1249270A (en) | Composition for etching metals | |
| IE42398L (en) | Composition for pickling metals | |
| GB1487849A (en) | Localised etching of silicon crystals | |
| US3107188A (en) | Process of etching semiconductors and etchant solutions used therefor | |
| GB1278499A (en) | Improved process for polishing oxidizable surfaces | |
| GB1285778A (en) | Improvements in and relating to methods of etching | |
| US3158517A (en) | Process for forming recesses in semiconductor bodies | |
| GB935680A (en) | Corrosion inhibiting | |
| GB989025A (en) | Improvements in or relating to methods of treating bodies of semiconductor material | |
| GB1349423A (en) | Desmutting etched aluminium-base alloys | |
| GB822251A (en) | A method of etching the surface of a semiconductor or an electric device comprising said semiconductor | |
| JPS55109498A (en) | Silicic acid scale removing agent | |
| GB1195944A (en) | Etching Silicon Oxide Material. | |
| GB843054A (en) | Improvements in and relating to the coating of metallic surfaces | |
| KR970008397A (en) | Etching solution and etching method of semiconductor device using same | |
| JPS5823931B2 (en) | How to use a hand hacking tool | |
| FR2196604A5 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |