GB1022366A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1022366A GB1022366A GB33754/63A GB3375463A GB1022366A GB 1022366 A GB1022366 A GB 1022366A GB 33754/63 A GB33754/63 A GB 33754/63A GB 3375463 A GB3375463 A GB 3375463A GB 1022366 A GB1022366 A GB 1022366A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contacts
- substrate
- aluminium
- slice
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 5
- 239000004411 aluminium Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000004033 plastic Substances 0.000 abstract 1
- 229920003023 plastic Polymers 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H01L2924/01005—Boron [B]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01023—Vanadium [V]
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- H01L2924/01024—Chromium [Cr]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
Abstract
1,022,366. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Aug. 21, 1964 [Aug. 26, 1963], No. 33754/63. Heading H1K. A semi-conductor device has all its external electrodes, each consisting of a metallic contact carrying a layer of solder, disposed on the same plane face of a semi-conductor body. Transistors of this type are made in multiple on a common slice, part of which is shown in Fig. 1 of the Provisional drawings. The slice may be of N-type silicon and the base and emitter zones made by standard oxide masking and diffusion techniques. Aluminium is deposited over the oxide film to contact the collector, base and emitter zones through etched apertures 20, 19, 18, respectively. The oxide surface is then etched free of aluminium. A film grading from chromium beneath to gold above is vapour deposited over the entire surface and then reduced by etching to form contacts 20, 21, 22 which are next coated with solder. The transistor is soldered contacts downwards on a glass substrate carrying similar films aligned with the contacts. The substrate, alternatively of ceramic, oxidized silicon, mica, or plastics, may mount several such devices and other circuit elements. An apertured template may be used to facilitate registration of the device contacts with the films on the substrate. To facilitate accurate positioning of the contacts in relation to the wafer edge an N-type grid pattern is diffused into the slice simultaneously with the emitter formation and individual dice subsequently broken from the slice along the diffused lines. If desired, the aluminium contacts may be dispensed with and a gold, aluminium or plated nickel film used in place of the graded film. Contact may be made with the films on the substrate by thermo-compression bonding, bonding by radiation through the substrate if it is transparent, or by silverloaded epoxy resin instead of .by soldering. The device may finally be protected by a coating of glaze or resin.
Priority Applications (22)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DENDAT1287696D DE1287696B (en) | 1962-04-16 | ||
BE631066D BE631066A (en) | 1962-04-16 | ||
NL291538D NL291538A (en) | 1962-04-16 | ||
CH452163A CH423995A (en) | 1962-04-16 | 1963-04-09 | Method of mounting and encapsulating a semiconductor device |
DEJ23535A DE1282188B (en) | 1962-04-16 | 1963-04-11 | Electrical semiconductor arrangement with several strip-shaped supply lines isolated from one another |
US273062A US3244939A (en) | 1962-04-16 | 1963-04-15 | Encapsulated die bonded hybrid integrated circuit |
FR931635A FR1354552A (en) | 1962-04-16 | 1963-04-16 | Manufacturing process applicable to semiconductor electronic components for printed circuits |
GB33754/63A GB1022366A (en) | 1963-08-26 | 1963-08-26 | Improvements in or relating to semiconductor devices |
GB378564A GB1036164A (en) | 1962-04-16 | 1964-01-29 | Improvements in or relating to semiconductor devices |
NL6408106A NL6408106A (en) | 1962-04-16 | 1964-07-16 | |
BE651446D BE651446A (en) | 1962-04-16 | 1964-08-06 | |
FR984543A FR86320E (en) | 1962-04-16 | 1964-08-07 | Manufacturing process applicable to semiconductor electronic components for printed circuits |
DE1439529A DE1439529B2 (en) | 1962-04-16 | 1964-08-12 | : Semiconductor component with a planar semiconductor element on a bonding plate and method for producing the same |
DEST22571A DE1292758B (en) | 1962-04-16 | 1964-08-21 | Electric semiconductor component |
NL6409849A NL6409849A (en) | 1962-04-16 | 1964-08-26 | |
FR986227A FR86819E (en) | 1962-04-16 | 1964-08-26 | Manufacturing process applicable to semiconductor electronic components for printed circuits |
NL6409848A NL6409848A (en) | 1962-04-16 | 1964-08-26 | |
BE652660D BE652660A (en) | 1962-04-16 | 1964-09-04 | |
DEST22635A DE1292761B (en) | 1962-04-16 | 1964-09-05 | Planar semiconductor device and method for its manufacture |
FR989359A FR86957E (en) | 1962-04-16 | 1964-09-25 | Manufacturing process applicable to semiconductor electronic components for printed circuits |
CH1250264A CH471468A (en) | 1962-04-16 | 1964-09-25 | Electric semiconductor device |
BE653537D BE653537A (en) | 1962-04-16 | 1964-09-25 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB33754/63A GB1022366A (en) | 1963-08-26 | 1963-08-26 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1022366A true GB1022366A (en) | 1966-03-09 |
Family
ID=10357013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB33754/63A Expired GB1022366A (en) | 1962-04-16 | 1963-08-26 | Improvements in or relating to semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1022366A (en) |
-
1963
- 1963-08-26 GB GB33754/63A patent/GB1022366A/en not_active Expired
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