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FR3037443B1 - Heterostructure et methode de fabrication - Google Patents

Heterostructure et methode de fabrication Download PDF

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Publication number
FR3037443B1
FR3037443B1 FR1501222A FR1501222A FR3037443B1 FR 3037443 B1 FR3037443 B1 FR 3037443B1 FR 1501222 A FR1501222 A FR 1501222A FR 1501222 A FR1501222 A FR 1501222A FR 3037443 B1 FR3037443 B1 FR 3037443B1
Authority
FR
France
Prior art keywords
heterostructure
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1501222A
Other languages
English (en)
Other versions
FR3037443A1 (fr
Inventor
Arnaud Castex
Daniel Delprat
Bernard Aspar
Ionut Radu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1501222A priority Critical patent/FR3037443B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to CN202010766588.7A priority patent/CN111864051A/zh
Priority to KR1020207036755A priority patent/KR102301378B1/ko
Priority to CN201680033898.XA priority patent/CN107710431B/zh
Priority to PCT/EP2016/063198 priority patent/WO2016198542A1/fr
Priority to SG10201911991YA priority patent/SG10201911991YA/en
Priority to EP16728029.6A priority patent/EP3308411B1/fr
Priority to KR1020177036949A priority patent/KR20180011243A/ko
Priority to JP2017563155A priority patent/JP2018518840A/ja
Priority to KR1020207007038A priority patent/KR102285595B1/ko
Priority to US15/735,477 priority patent/US10826459B2/en
Publication of FR3037443A1 publication Critical patent/FR3037443A1/fr
Application granted granted Critical
Publication of FR3037443B1 publication Critical patent/FR3037443B1/fr
Priority to US16/877,309 priority patent/US11595020B2/en
Priority to US17/075,465 priority patent/US11637542B2/en
Priority to US18/302,440 priority patent/US12101080B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H03H9/6496—Reducing ripple in transfer characteristic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FR1501222A 2015-06-12 2015-06-12 Heterostructure et methode de fabrication Active FR3037443B1 (fr)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FR1501222A FR3037443B1 (fr) 2015-06-12 2015-06-12 Heterostructure et methode de fabrication
US15/735,477 US10826459B2 (en) 2015-06-12 2016-06-09 Heterostructure and method of fabrication
CN201680033898.XA CN107710431B (zh) 2015-06-12 2016-06-09 异质结构和制造异质结构的方法
PCT/EP2016/063198 WO2016198542A1 (fr) 2015-06-12 2016-06-09 Hétérostructure et procédé de fabrication
SG10201911991YA SG10201911991YA (en) 2015-06-12 2016-06-09 Heterostructure and method of fabrication
EP16728029.6A EP3308411B1 (fr) 2015-06-12 2016-06-09 Hétérostructure et procédé de fabrication
KR1020177036949A KR20180011243A (ko) 2015-06-12 2016-06-09 헤테로 구조체 및 제조 방법
JP2017563155A JP2018518840A (ja) 2015-06-12 2016-06-09 ヘテロ構造体及び製造の方法
CN202010766588.7A CN111864051A (zh) 2015-06-12 2016-06-09 支撑基板及其用途
KR1020207036755A KR102301378B1 (ko) 2015-06-12 2016-06-09 헤테로 구조체 및 제조 방법
KR1020207007038A KR102285595B1 (ko) 2015-06-12 2016-06-09 헤테로 구조체 및 제조 방법
US16/877,309 US11595020B2 (en) 2015-06-12 2020-05-18 Heterostructure and method of fabrication
US17/075,465 US11637542B2 (en) 2015-06-12 2020-10-20 Heterostructure and method of fabrication
US18/302,440 US12101080B2 (en) 2015-06-12 2023-04-18 Heterostructure and method of fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1501222 2015-06-12
FR1501222A FR3037443B1 (fr) 2015-06-12 2015-06-12 Heterostructure et methode de fabrication

Publications (2)

Publication Number Publication Date
FR3037443A1 FR3037443A1 (fr) 2016-12-16
FR3037443B1 true FR3037443B1 (fr) 2018-07-13

Family

ID=54848603

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1501222A Active FR3037443B1 (fr) 2015-06-12 2015-06-12 Heterostructure et methode de fabrication

Country Status (8)

Country Link
US (4) US10826459B2 (fr)
EP (1) EP3308411B1 (fr)
JP (1) JP2018518840A (fr)
KR (3) KR102301378B1 (fr)
CN (2) CN111864051A (fr)
FR (1) FR3037443B1 (fr)
SG (1) SG10201911991YA (fr)
WO (1) WO2016198542A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3037443B1 (fr) * 2015-06-12 2018-07-13 Soitec Heterostructure et methode de fabrication
WO2019022006A1 (fr) * 2017-07-27 2019-01-31 京セラ株式会社 Élément à ondes acoustiques
FR3079660B1 (fr) * 2018-03-29 2020-04-17 Soitec Procede de transfert d'une couche
US20200044621A1 (en) * 2018-07-31 2020-02-06 Qualcomm Incorporated Thin film devices
TWI815970B (zh) * 2018-11-09 2023-09-21 日商日本碍子股份有限公司 壓電性材料基板與支持基板的接合體、及其製造方法
US11979139B2 (en) 2018-12-20 2024-05-07 Sanan Japan Technology Corporation Elastic wave device, elastic waves filter, duplexer, and module
DE102019119239A1 (de) 2019-07-16 2021-01-21 RF360 Europe GmbH Multiplexer
CN113922778B (zh) * 2020-07-10 2022-06-21 济南晶正电子科技有限公司 一种滤波器用压电衬底结构及其制备方法
CN111883644B (zh) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法
CN114244311A (zh) * 2021-12-22 2022-03-25 江苏卓胜微电子股份有限公司 一种声表面波谐振器及滤波器
FR3136327A1 (fr) * 2022-06-02 2023-12-08 Soitec Dispositif a ondes elastiques de surface
FR3136325A1 (fr) * 2022-06-02 2023-12-08 Soitec Dispositif a ondes elastiques de surface
FR3136326A1 (fr) * 2022-06-02 2023-12-08 Soitec Filtre dispositif a ondes elastiques de surface

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759753A (en) 1995-07-19 1998-06-02 Matsushita Electric Industrial Co., Ltd. Piezoelectric device and method of manufacturing the same
JP3924810B2 (ja) * 1995-07-19 2007-06-06 松下電器産業株式会社 圧電素子とその製造方法
FR2789518B1 (fr) * 1999-02-10 2003-06-20 Commissariat Energie Atomique Structure multicouche a contraintes internes controlees et procede de realisation d'une telle structure
US6861021B2 (en) 2002-04-16 2005-03-01 General Electric Company Molding tool construction and molding method
JP4723207B2 (ja) 2004-05-31 2011-07-13 信越化学工業株式会社 複合圧電基板
US8664747B2 (en) 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
JPWO2009139108A1 (ja) 2008-05-12 2011-09-15 株式会社村田製作所 弾性境界波装置
KR100945800B1 (ko) * 2008-12-09 2010-03-05 김영혜 이종 접합 웨이퍼 제조방법
FR2942911B1 (fr) * 2009-03-09 2011-05-13 Soitec Silicon On Insulator Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
US8141429B2 (en) 2010-07-30 2012-03-27 Rosemount Aerospace Inc. High temperature capacitive static/dynamic pressure sensors and methods of making the same
FR2967812B1 (fr) * 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif
WO2012073871A1 (fr) * 2010-11-30 2012-06-07 株式会社村田製作所 Dispositif à ondes élastiques et son procédé de fabrication
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
WO2013018604A1 (fr) * 2011-07-29 2013-02-07 株式会社村田製作所 Dispositif piézoélectrique et procédé de fabrication de dispositif piézoélectrique
CN103703793B (zh) * 2012-06-26 2015-02-18 本多电子株式会社 机电转换元件及其制造方法
JP6092535B2 (ja) * 2012-07-04 2017-03-08 太陽誘電株式会社 ラム波デバイスおよびその製造方法
EP2736169B1 (fr) * 2012-08-17 2016-09-14 NGK Insulators, Ltd. Substrat composite, dispositif à ondes élastiques de surface, et procédé de production de substrat composite
EP4120320A1 (fr) * 2015-03-03 2023-01-18 GlobalWafers Co., Ltd. Films de silicium polycristallin de piégeage de charge sur des substrats de silicium avec une contrainte de film commandable
FR3037443B1 (fr) * 2015-06-12 2018-07-13 Soitec Heterostructure et methode de fabrication
US11646714B2 (en) * 2018-07-10 2023-05-09 Texas Instruments Incorporated Laterally vibrating bulk acoustic wave resonator

Also Published As

Publication number Publication date
KR20180011243A (ko) 2018-01-31
SG10201911991YA (en) 2020-02-27
KR102301378B1 (ko) 2021-09-14
US12101080B2 (en) 2024-09-24
CN107710431A (zh) 2018-02-16
CN107710431B (zh) 2020-07-31
JP2018518840A (ja) 2018-07-12
KR102285595B1 (ko) 2021-08-04
CN111864051A (zh) 2020-10-30
US10826459B2 (en) 2020-11-03
US11637542B2 (en) 2023-04-25
US11595020B2 (en) 2023-02-28
US20210058058A1 (en) 2021-02-25
US20200280298A1 (en) 2020-09-03
FR3037443A1 (fr) 2016-12-16
US20230275559A1 (en) 2023-08-31
KR20200029067A (ko) 2020-03-17
EP3308411A1 (fr) 2018-04-18
US20180159498A1 (en) 2018-06-07
EP3308411B1 (fr) 2021-10-13
WO2016198542A1 (fr) 2016-12-15
KR20200145848A (ko) 2020-12-30

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