Nothing Special   »   [go: up one dir, main page]

FR2949775B1 - Substrat de protection pour dispositif collecteur ou emetteur de rayonnement - Google Patents

Substrat de protection pour dispositif collecteur ou emetteur de rayonnement

Info

Publication number
FR2949775B1
FR2949775B1 FR0956206A FR0956206A FR2949775B1 FR 2949775 B1 FR2949775 B1 FR 2949775B1 FR 0956206 A FR0956206 A FR 0956206A FR 0956206 A FR0956206 A FR 0956206A FR 2949775 B1 FR2949775 B1 FR 2949775B1
Authority
FR
France
Prior art keywords
protective substrate
color device
radiation transmitter
transmitter
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0956206A
Other languages
English (en)
Other versions
FR2949775A1 (fr
Inventor
Claire Thoumazet
Emmanuel Valentin
Stephanie Roche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Performance Plastics Corp
Original Assignee
Saint Gobain Performance Plastics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0956206A priority Critical patent/FR2949775B1/fr
Application filed by Saint Gobain Performance Plastics Corp filed Critical Saint Gobain Performance Plastics Corp
Priority to CN2010800509219A priority patent/CN102714279A/zh
Priority to MX2012002891A priority patent/MX2012002891A/es
Priority to PCT/EP2010/062998 priority patent/WO2011029786A1/fr
Priority to JP2012528330A priority patent/JP2013504776A/ja
Priority to EP10750119A priority patent/EP2476148A1/fr
Priority to AU2010294304A priority patent/AU2010294304B2/en
Priority to BR112012005451A priority patent/BR112012005451A2/pt
Priority to US13/395,406 priority patent/US8766280B2/en
Publication of FR2949775A1 publication Critical patent/FR2949775A1/fr
Application granted granted Critical
Publication of FR2949775B1 publication Critical patent/FR2949775B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/24992—Density or compression of components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Plasma & Fusion (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Optical Elements (AREA)
FR0956206A 2009-09-10 2009-09-10 Substrat de protection pour dispositif collecteur ou emetteur de rayonnement Expired - Fee Related FR2949775B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0956206A FR2949775B1 (fr) 2009-09-10 2009-09-10 Substrat de protection pour dispositif collecteur ou emetteur de rayonnement
MX2012002891A MX2012002891A (es) 2009-09-10 2010-09-03 Sustrato protector para un dispositivo que recolecta o emite radiacion.
PCT/EP2010/062998 WO2011029786A1 (fr) 2009-09-10 2010-09-03 Substrat protecteur pour un dispositif recueillant ou émettant un rayonnement
JP2012528330A JP2013504776A (ja) 2009-09-10 2010-09-03 放射線を収集し又は放出するデバイスのための保護基材
CN2010800509219A CN102714279A (zh) 2009-09-10 2010-09-03 用于收集或发射辐射的装置的保护性基片
EP10750119A EP2476148A1 (fr) 2009-09-10 2010-09-03 Substrat protecteur pour un dispositif recueillant ou émettant un rayonnement
AU2010294304A AU2010294304B2 (en) 2009-09-10 2010-09-03 Protective substrate for a device that collects or emits radiation
BR112012005451A BR112012005451A2 (pt) 2009-09-10 2010-09-03 substrato protetor para um dispositivo, dispositivo que coleta ou emite radiação, processo para fabricar um substrato protetor
US13/395,406 US8766280B2 (en) 2009-09-10 2010-09-03 Protective substrate for a device that collects or emits radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0956206A FR2949775B1 (fr) 2009-09-10 2009-09-10 Substrat de protection pour dispositif collecteur ou emetteur de rayonnement

Publications (2)

Publication Number Publication Date
FR2949775A1 FR2949775A1 (fr) 2011-03-11
FR2949775B1 true FR2949775B1 (fr) 2013-08-09

Family

ID=42062308

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0956206A Expired - Fee Related FR2949775B1 (fr) 2009-09-10 2009-09-10 Substrat de protection pour dispositif collecteur ou emetteur de rayonnement

Country Status (9)

Country Link
US (1) US8766280B2 (fr)
EP (1) EP2476148A1 (fr)
JP (1) JP2013504776A (fr)
CN (1) CN102714279A (fr)
AU (1) AU2010294304B2 (fr)
BR (1) BR112012005451A2 (fr)
FR (1) FR2949775B1 (fr)
MX (1) MX2012002891A (fr)
WO (1) WO2011029786A1 (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2949775B1 (fr) 2009-09-10 2013-08-09 Saint Gobain Performance Plast Substrat de protection pour dispositif collecteur ou emetteur de rayonnement
FR2949776B1 (fr) 2009-09-10 2013-05-17 Saint Gobain Performance Plast Element en couches pour l'encapsulation d'un element sensible
TWI531276B (zh) * 2010-10-21 2016-04-21 行政院原子能委員會核能研究所 有機電激發光元件之封裝方法及其結構
FR2973939A1 (fr) 2011-04-08 2012-10-12 Saint Gobain Element en couches pour l’encapsulation d’un element sensible
FR2973946B1 (fr) * 2011-04-08 2013-03-22 Saint Gobain Dispositif électronique a couches
FR2973940A1 (fr) * 2011-04-08 2012-10-12 Saint Gobain Element en couches pour l’encapsulation d’un element sensible
US9633819B2 (en) * 2011-05-13 2017-04-25 Fibics Incorporated Microscopy imaging method and system
FR2980394B1 (fr) * 2011-09-26 2013-10-18 Commissariat Energie Atomique Structure multicouche offrant une etancheite aux gaz amelioree
US9761830B1 (en) * 2012-05-14 2017-09-12 Eclipse Energy Systems, Inc. Environmental protection film for thin film devices
KR20150097796A (ko) * 2012-12-31 2015-08-26 생-고뱅 퍼포먼스 플라스틱스 코포레이션 유연성 기재 상의 박막 규소질화물 장벽 층들
KR102072805B1 (ko) * 2013-04-15 2020-02-04 삼성디스플레이 주식회사 유기발광표시장치 및 그의 제조방법
WO2014172336A1 (fr) * 2013-04-17 2014-10-23 Saint-Gobain Performance Plastics Corporation Stratifié multicouche pour applications photovoltaïques
US9703011B2 (en) * 2013-05-07 2017-07-11 Corning Incorporated Scratch-resistant articles with a gradient layer
US9110230B2 (en) 2013-05-07 2015-08-18 Corning Incorporated Scratch-resistant articles with retained optical properties
US9366784B2 (en) 2013-05-07 2016-06-14 Corning Incorporated Low-color scratch-resistant articles with a multilayer optical film
US9178178B2 (en) * 2013-05-16 2015-11-03 Samsung Display Co., Ltd. Organic light-emitting diode display having improved adhesion and damage resistance characteristics, an electronic device including the same, and method of manufacturing the organic light-emitting diode display
EP3014675B1 (fr) * 2013-06-29 2019-05-15 Aixtron Se Procédé de dépôt de revêtements à haute performance et dispositifs électroniques encapsulés
JP2015133247A (ja) * 2014-01-14 2015-07-23 日東電工株式会社 有機エレクトロルミネッセンス装置
US11267973B2 (en) 2014-05-12 2022-03-08 Corning Incorporated Durable anti-reflective articles
KR101985923B1 (ko) * 2014-05-16 2019-06-04 어플라이드 머티어리얼스, 인코포레이티드 배리어 층 스택, 배리어 층 스택을 제조하기 위한 방법, 및 울트라-하이 배리어 층 및 반사방지 시스템
JP2016001526A (ja) * 2014-06-11 2016-01-07 株式会社ジャパンディスプレイ 表示装置
US9790593B2 (en) 2014-08-01 2017-10-17 Corning Incorporated Scratch-resistant materials and articles including the same
KR102404726B1 (ko) * 2015-06-24 2022-05-31 삼성전자주식회사 유기 전자 소자 및 그 제조 방법
WO2017048700A1 (fr) 2015-09-14 2017-03-23 Corning Incorporated Articles anti-réfléchissants de transmission de lumière élevée et résistants aux rayures
CN105552247B (zh) * 2015-12-08 2018-10-26 上海天马微电子有限公司 复合基板、柔性显示装置及其制备方法
JP2017208254A (ja) * 2016-05-19 2017-11-24 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP6805099B2 (ja) * 2017-09-08 2020-12-23 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル、有機ｅｌ表示装置、およびその製造方法
US10998514B2 (en) 2017-12-01 2021-05-04 Samsung Electronics Co., Ltd. Photoelectric devices and image sensors and electronic devices
CN109935717B (zh) * 2017-12-15 2021-05-25 京东方科技集团股份有限公司 封装结构及封装方法、电致发光器件、显示装置
KR101932900B1 (ko) 2017-12-29 2018-12-28 주식회사 테스 발광소자의 보호막 증착방법
JP2019163493A (ja) * 2018-03-19 2019-09-26 住友金属鉱山株式会社 透明酸化物積層膜、透明酸化物積層膜の製造方法、及び透明樹脂基板
US11337311B2 (en) * 2018-07-06 2022-05-17 Ppg Industries Ohio, Inc. Aircraft window with variable power density heater film
EP3837223A1 (fr) 2018-08-17 2021-06-23 Corning Incorporated Articles en un oxyde inorganique comportant des structures antiréfléchissantes durables et minces
CN109509844A (zh) * 2018-10-26 2019-03-22 武汉华星光电半导体显示技术有限公司 Oled显示面板
EP4120378A1 (fr) * 2021-07-12 2023-01-18 Samsung Display Co., Ltd. Dispositif d'affichage et son procédé de fabrication

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JPH07111484B2 (ja) * 1989-06-26 1995-11-29 松下電器産業株式会社 プラスチック製光学部品の反射防止膜とその形成方法
FR2673633B1 (fr) * 1991-03-06 1993-06-11 Air Liquide Revetement multicouche pour substrat polycarbonate.
US5254904A (en) * 1991-05-21 1993-10-19 U.S. Philips Corporation Antireflective coating layer in particular for a cathode ray tube
US5234748A (en) * 1991-06-19 1993-08-10 Ford Motor Company Anti-reflective transparent coating with gradient zone
FR2748743B1 (fr) * 1996-05-14 1998-06-19 Saint Gobain Vitrage Vitrage a revetement antireflet
JPH11218603A (ja) * 1997-11-27 1999-08-10 Sony Corp 反射防止膜およびその製造方法
US6335479B1 (en) * 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
JP2000211053A (ja) 1999-01-22 2000-08-02 Sony Corp 光学薄膜デバイス
EP1152263A4 (fr) * 1999-09-30 2003-08-20 Nikon Corp Dispositif optique film mince multicouche et aligneur
US6573652B1 (en) 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
US20100330748A1 (en) 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
FR2800998B1 (fr) * 1999-11-17 2002-04-26 Saint Gobain Vitrage Substrat transparent comportant un revetement antireflet
DE10196704B3 (de) 2000-09-29 2013-03-14 Nippon Sheet Glass Co., Ltd. Transparentes geschichtetes Erzeugnis mit einem Auftrag mit geringem Emissionsvermögen
US20020090521A1 (en) * 2000-09-29 2002-07-11 Tatsuji Nakajima Silica layers and antireflection film using same
US7071613B2 (en) 2001-10-10 2006-07-04 Lg.Philips Lcd Co., Ltd. Organic electroluminescent device
JP4016178B2 (ja) * 2001-11-06 2007-12-05 ソニー株式会社 表示装置及び反射防止用基体
US6589658B1 (en) * 2001-11-29 2003-07-08 Guardian Industries Corp. Coated article with anti-reflective layer(s) system
CN1176565C (zh) 2002-11-25 2004-11-17 清华大学 一种有机电致发光器件的封装层及其制备方法和应用
JP2004198590A (ja) 2002-12-17 2004-07-15 Konica Minolta Holdings Inc 薄膜有するを物品、その製造方法及び低反射体並びに透明導電性体
US7807225B2 (en) * 2003-01-31 2010-10-05 Sharp Laboratories Of America, Inc. High density plasma non-stoichiometric SiOxNy films
JP2004345223A (ja) * 2003-05-22 2004-12-09 Dainippon Printing Co Ltd 光学機能性フィルム、および画像表示装置
FR2858975B1 (fr) 2003-08-20 2006-01-27 Saint Gobain Substrat transparent revetu d'un empilement de couches minces a proprietes de reflexion dans l'infrarouge et/ou dans le domaine du rayonnement solaire
JP4703108B2 (ja) * 2003-09-10 2011-06-15 三星モバイルディスプレイ株式會社 発光素子基板およびそれを用いた発光素子
US6842288B1 (en) * 2003-10-30 2005-01-11 3M Innovative Properties Company Multilayer optical adhesives and articles
US20050093437A1 (en) * 2003-10-31 2005-05-05 Ouyang Michael X. OLED structures with strain relief, antireflection and barrier layers
JP2007526601A (ja) 2004-02-20 2007-09-13 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 拡散バリア層および拡散バリア層の製造方法
US20050207016A1 (en) * 2004-03-15 2005-09-22 Fuji Photo Film Co., Ltd. Antireflection film, polarizing plate and liquid crystal display
JP5848862B2 (ja) 2004-06-25 2016-01-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ カプセル化膜の遮水性能の改善
JP4837271B2 (ja) * 2004-10-04 2011-12-14 株式会社アルバック 反射防止膜の形成方法
JP2006338947A (ja) 2005-05-31 2006-12-14 Sanyo Electric Co Ltd 保護膜形成方法および保護膜
JP2007017668A (ja) * 2005-07-07 2007-01-25 Konica Minolta Holdings Inc 光学フィルム
JP2007038529A (ja) 2005-08-03 2007-02-15 Konica Minolta Holdings Inc ガスバリア性薄膜積層体、ガスバリア性樹脂基材および有機エレクトロルミネッセンスデバイス
US8017242B2 (en) * 2005-09-28 2011-09-13 Fujifilm Corporation Antireflection film, polarizing plate and image display
US8153282B2 (en) * 2005-11-22 2012-04-10 Guardian Industries Corp. Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide
WO2007081057A1 (fr) * 2006-01-16 2007-07-19 Fujifilm Corporation Composition durcissable et produit durci, film stratifie et film anti-reflet utilisant celui-ci, plaque polarisante et dispositif d’affichage d’images utilisant ledit film anti-reflet
JP5135753B2 (ja) * 2006-02-01 2013-02-06 セイコーエプソン株式会社 光学物品
US20070212498A1 (en) * 2006-02-24 2007-09-13 Fujifilm Corporation Optical film, antireflection film, polarizing plate, display apparatus and method for manufacturing optical film
US20100326429A1 (en) * 2006-05-19 2010-12-30 Cumpston Brian H Hermetically sealed cylindrical solar cells
JP2007277631A (ja) 2006-04-06 2007-10-25 Konica Minolta Holdings Inc ガスバリア性薄膜積層体の製造方法、ガスバリア性薄膜積層体、ガスバリア性樹脂基材及び有機エレクトロルミネッセンスデバイス
WO2008011919A1 (fr) * 2006-07-28 2008-01-31 Ilford Imaging Switzerland Gmbh Matériaux flexibles pour applications optiques
US20080049431A1 (en) * 2006-08-24 2008-02-28 Heather Debra Boek Light emitting device including anti-reflection layer(s)
EP2082619B1 (fr) 2006-11-06 2022-10-12 Agency for Science, Technology And Research Empilement de barrières d'encapsulation de nanoparticules
US7781031B2 (en) 2006-12-06 2010-08-24 General Electric Company Barrier layer, composite article comprising the same, electroactive device, and method
JP2008216429A (ja) * 2007-03-01 2008-09-18 Toppan Printing Co Ltd 防眩フィルム
US8586189B2 (en) 2007-09-19 2013-11-19 Fujifilm Corporation Gas-barrier film and organic device comprising same
JP5139153B2 (ja) * 2007-09-19 2013-02-06 富士フイルム株式会社 ガスバリア性フィルムおよびこれを用いた有機デバイス
JP5417698B2 (ja) 2007-09-21 2014-02-19 凸版印刷株式会社 機能性フィルムの製造方法
WO2009046060A2 (fr) * 2007-10-01 2009-04-09 Davis, Joseph And Negley Appareils et procédés pour produire de l'énergie électrique renforcée de photons par conversion-abaissement
US8987039B2 (en) * 2007-10-12 2015-03-24 Air Products And Chemicals, Inc. Antireflective coatings for photovoltaic applications
US20090096106A1 (en) 2007-10-12 2009-04-16 Air Products And Chemicals, Inc. Antireflective coatings
JP2009133000A (ja) * 2007-10-30 2009-06-18 Fujifilm Corp シリコン窒化物膜及びそれを用いたガスバリア膜、薄膜素子
DE102008031405A1 (de) 2008-07-02 2010-01-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines organischen elektronischen Bauelements und organisches elektronisches Bauelement
WO2009098793A1 (fr) 2008-02-07 2009-08-13 Fuji Electric Holdings Co., Ltd. Dispositif d'affichage électroluminescent organique et son procédé de fabrication
US20090199901A1 (en) * 2008-02-08 2009-08-13 Applied Materials, Inc. Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device
KR20090126863A (ko) * 2008-06-05 2009-12-09 삼성전자주식회사 광학적 기능성을 갖는 다층 봉지 박막의 형성방법 및 그에 의해 제조된 다층 봉지 박막
KR101084267B1 (ko) 2009-02-26 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
DE102009024411A1 (de) 2009-03-24 2010-09-30 Osram Opto Semiconductors Gmbh Dünnschichtverkapselung für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement
FR2949775B1 (fr) 2009-09-10 2013-08-09 Saint Gobain Performance Plast Substrat de protection pour dispositif collecteur ou emetteur de rayonnement
FR2949776B1 (fr) 2009-09-10 2013-05-17 Saint Gobain Performance Plast Element en couches pour l'encapsulation d'un element sensible
JP2011100111A (ja) * 2009-10-09 2011-05-19 Seiko Epson Corp 光学物品、光学物品の製造方法、電子機器
FR2973939A1 (fr) 2011-04-08 2012-10-12 Saint Gobain Element en couches pour l’encapsulation d’un element sensible
FR2973940A1 (fr) 2011-04-08 2012-10-12 Saint Gobain Element en couches pour l’encapsulation d’un element sensible

Also Published As

Publication number Publication date
FR2949775A1 (fr) 2011-03-11
WO2011029786A1 (fr) 2011-03-17
CN102714279A (zh) 2012-10-03
JP2013504776A (ja) 2013-02-07
BR112012005451A2 (pt) 2016-04-12
MX2012002891A (es) 2012-08-23
US20120228641A1 (en) 2012-09-13
US8766280B2 (en) 2014-07-01
AU2010294304B2 (en) 2013-08-29
EP2476148A1 (fr) 2012-07-18
AU2010294304A1 (en) 2012-03-29

Similar Documents

Publication Publication Date Title
FR2949775B1 (fr) Substrat de protection pour dispositif collecteur ou emetteur de rayonnement
FR2948254B1 (fr) Dispositif de protection de tuyauteries contre la foudre
FR2947239B1 (fr) Dispositif de transmission pour bicyclette
FR2949872B1 (fr) Dispositif de modulation electro-optique
FR2934000B1 (fr) Dispositif de protection dite grimpante
EP2372320A4 (fr) Équipement de refroidissement rapide pour vapeurs organiques ou inorganiques
FR2927679B1 (fr) Dispositif de debrayage
FR2937779B1 (fr) Dispositif de treuil.
FR2926063B1 (fr) Dispositif de palettisation/depalletisation de bouteilles.
FR2962961B1 (fr) Dispositif de securite pour nacelle de telesiege
FR2951952B1 (fr) Dispositif de securite pour grimpeur
FR2954672B1 (fr) Dispositif broyeur de vegetaux
FR2943266B1 (fr) Dispositif de soudobrasage
FR2943903B1 (fr) Dispositif de protection pour pavillon de stethoscope
FR2925209B1 (fr) Dispositif de protection pour condensateur
FR2952811B1 (fr) Dispositif de protection d'une oreille
FR2952037B1 (fr) Dispositif de reception pour conteneur
FR2969231B1 (fr) Dispositif de maintien d'element(s) allonge(s)
FR2945555B1 (fr) Dispositif de protection pour excavation, plus particulierement un coussin anti eboulement
FR2906823B1 (fr) Dispositif de protection des facades.
FR2924210B1 (fr) Dispositif de protection balistique
FR2948953B1 (fr) Dispositif de couverture pour batiment.
FR2931607B1 (fr) Dispositif de communication
FR2959769B1 (fr) Dispositif de verrouillage pour un vantail semi-fixe
FR2942786B1 (fr) Dispositif de protection pour tapis roulant de transfert

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 7

ST Notification of lapse

Effective date: 20170531